ICP (Inductively Coupled Plasma) photoresist removing equipment
By using a sieve plate assembly in the ICP stripping equipment to block ions and allow only free radicals to react with the wafer surface, the problem of wafer damage caused by ion bombardment is solved, achieving efficient stripping and saving time.
Patent Information
- Application Number
- CN202520112384.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-17
- Publication Date
- 2026-01-23
- Estimated Expiration
- 2035-01-17
AI Technical Summary
Existing ICP stripping equipment suffers damage to the wafer during the stripping process due to ion bombardment, requiring multiple cycles of stripping and passivation, which reduces stripping efficiency.
A sieve plate assembly is used to block ions from entering the process chamber, allowing only free radicals to enter and react with the photoresist on the wafer surface to remove the photoresist, thus avoiding ion bombardment.
No passivation step is required, reducing process time and improving desizing and reaction efficiency.
Smart Images
Figure CN223829780U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a semiconductor technical field especially relates to a kind of ICP equipment. BACKGROUND
[0002] The existing ICP equipment, plasma includes electron, ion and active particle such as free radical, plasma is bombarded under the action of electric field wafer surface, wherein, free radical and wafer surface material chemical reaction, realize the purpose of stripping.For preventing ion to wafer produce damage, it will be passivated to wafer, in the process, stripping and passivation step need to be recycled multiple times.However, the above process will increase stripping time, reduce stripping efficiency. SUMMARY
[0003] The utility model discloses a kind of ICP equipment, save stripping time, improve stripping efficiency.
[0004] To achieve this purpose, the utility model adopts the following technical solutions:
[0005] A kind of ICP equipment, including process cavity, sieve plate assembly, gas source and gas passage, the gas inlet end of the gas passage is equipped in the gas source, the gas outlet end of the gas passage and the process cavity are equipped with the sieve plate assembly;The process cavity is used to accommodate wafer;The gas in the gas source is ionized in the gas passage;The sieve plate assembly includes first sieve plate and second sieve plate, and gap is equipped between the two, the first sieve plate is equipped with first sieve hole, the second sieve plate is equipped with second sieve hole, the first sieve hole and the second sieve hole are misaligned, the gas passage, the first sieve hole, the gap, the second sieve hole and the process cavity are communicated, so that free radical formed by gas ionization can enter the process cavity, ion formed by gas ionization is blocked by the sieve plate assembly.
[0006] In some possible implementation modes, the first sieve plate is equipped with a plurality of first sieve holes, the second sieve plate is equipped with a plurality of second sieve holes, and a plurality of first sieve holes and a plurality of second sieve holes are misaligned.
[0007] In some possible implementation modes, the first sieve plate and the second sieve plate are both arranged parallel to horizontal plane, and the projection of a plurality of first sieve holes and a plurality of second sieve holes on horizontal plane is that a plurality of first sieve holes and a plurality of second sieve holes are sequentially and alternately arranged and spaced apart from each other in horizontal row, a plurality of first sieve holes and a plurality of second sieve holes are sequentially and alternately arranged and spaced apart from each other in vertical column, and a plurality of first sieve holes and a plurality of second sieve holes are uniformly arranged on horizontal plane.
[0008] In some possible implementations, the process cavity has an opening, the sieve plate assembly is disposed at the opening and located inside the process cavity, the first sieve plate is disposed close to the opening, and the first sieve plate is sealed to the inner wall of the process cavity.
[0009] In some possible implementations, the shape of the sieve assembly is adapted to the shape of the opening, and the cross-sectional area of the sieve assembly is greater than or equal to the cross-sectional area of the opening. The sieve assembly is located within the process cavity and installed on the inner wall of the process cavity.
[0010] In some possible implementations, the process cavity is provided with a mounting boss on its outer side, the mounting boss has a limiting groove, the opening is opened at the bottom of the limiting groove, the gas channel is limited in the limiting groove, and the bottom of the gas channel abuts against the bottom of the limiting groove.
[0011] In some possible implementations, the process chamber and the gas passage are sealed together.
[0012] In some possible implementations, an annular guide ring is also included, one end of which is connected to the second sieve plate and the other end of which faces the wafer in the process chamber.
[0013] In some possible implementations, the guide ring and the wafer are arranged along the same center line.
[0014] In some possible implementations, the process chamber is provided with a wafer carrier stage for holding the wafer, and the wafer carrier stage is provided with a heating element for heating the wafer.
[0015] The beneficial effects of this utility model are:
[0016] This invention provides an ICP photoresist removal device. Gas from a gas source is ionized through a gas channel to form plasma, specifically including active particles such as ions and free radicals. Ions are blocked by a sieve assembly and cannot enter the process chamber. Free radicals, as gas clusters, can pass through the first sieve aperture, the gap, and the second sieve aperture to enter the process chamber, where they react with the photoresist on the wafer surface, achieving the purpose of photoresist removal. Because charged ions are blocked outside the process chamber, they are prevented from bombarding the wafer, solving the problem of wafer damage. Wafer passivation is unnecessary, saving the passivation step, reducing process time, and improving efficiency. Attached Figure Description
[0017] Figure 1 This is a schematic diagram of the ICP descaling device provided in a specific embodiment of this utility model;
[0018] Figure 2 yesFigure 1 Enlarged view of point A;
[0019] Figure 3 This is a partial cross-sectional view of the sieve plate assembly provided in a specific embodiment of this utility model;
[0020] Figure 4 This is a schematic diagram of the projection of the first and second sieve holes in the horizontal plane in a partial sieve plate assembly provided by a specific embodiment of this utility model.
[0021] In the picture:
[0022] 1. Process cavity; 11. Opening; 12. Mounting boss; 13. Limiting groove; 14. Sealing groove; 2. Sieve plate assembly; 21. First sieve plate; 211. First sieve hole; 22. Second sieve plate; 221. Second sieve hole; 23. Gap; 3. Gas source; 4. Gas channel; 41. Cylinder; 42. Cover plate; 43. RF power source; 44. Coil; 5. Guide ring; 6. Plate stage; 7. Sealing ring;
[0023] 100. Wafer. Detailed Implementation
[0024] To make the technical problems solved by this utility model, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the embodiments of this utility model will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0025] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0026] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0027] like Figures 1-4 As shown, this embodiment provides an ICP desmearing device, including a process chamber 1, a sieve assembly 2, a gas source 3, and a gas channel 4. The gas source 3 is located at the inlet end of the gas channel 4, and the sieve assembly 2 is located between the outlet end of the gas channel 4 and the process chamber 1. The process chamber 1 is used to accommodate the wafer 100. The gas in the gas source 3 is ionized in the gas channel 4. The sieve assembly 2 includes a first sieve 21 and a second sieve 22, with a gap 23 between them. The first sieve 21 has a first sieve hole 211, and the second sieve 22 has a second sieve hole 221. The first sieve hole 211 and the second sieve hole 221 are staggered. The gas channel 4, the first sieve hole 211, the gap 23, the second sieve hole 221, and the process chamber 1 are connected, so that the free radicals formed by gas ionization can enter the process chamber 1, and the ions formed by gas ionization are blocked by the sieve assembly 2.
[0028] For example, the gas channel 4 is located above the process chamber 1, the first screen plate 21 is located above the second screen plate 22, the inlet is located at the top of the gas channel 4, the outlet is located at the bottom of the gas channel 4, and the outlet faces the first screen plate 21 and is located above the first screen plate 21.
[0029] Optionally, the gas channel 4 includes a cylinder 41, a cover plate 42, an RF power source 43, and a coil 44. The cover plate 42 is sealed to the cylinder 41, and the gas source 3 is connected to the cover plate 42, with the outlet of the gas source 3 located inside the gas channel 4. The coil 44 is electrically connected to the RF power source 43 and is wound around the cylinder 41. The cylinder 41, the sieve plate assembly 2, and the process chamber 1 are connected and grounded. The upper part of the gas channel 4 has a positive voltage, and the lower part has a ground voltage of zero. There is a potential difference between the inlet and outlet ends of the gas channel 4, forming an electric field. Further, a sealing element is provided between the cover plate 42 and the cylinder 41 to ensure a sealed connection and prevent gas leakage from the gas channel 4. The cover plate 42 has a groove, and one end of the cylinder 41 is inserted into the groove. The sealing element, such as a sealing ring 7, is fitted onto the cylinder 41 and located between the cylinder 41 and the groove wall.
[0030] Specifically, the gas in gas source 3 can be oxygen. Oxygen plasma reacts with the photoresist on wafer 100 to generate gaseous molecules such as CO2 and H2O, thereby achieving the purpose of removing the photoresist. For example, the oxygen cylinder is connected to the cover plate 42 through a gas pipe. The cover plate 42 is provided with a protrusion, the protrusion is provided with a receiving groove, the protrusion is provided with an air outlet and an air inlet communicating with the receiving groove, the air inlet is connected to the gas pipe, and the air outlet faces the inside of the cylinder 41.
[0031] The process chamber 1 is provided with a mounting boss 12 on the outside. The mounting boss 12 has a limiting groove 13. The opening 11 is opened at the bottom of the limiting groove 13. The periphery of the cylinder 41 is limited by the limiting groove 13, and the bottom of the cylinder 41 abuts against the bottom of the limiting groove 13, so as to ensure the installation accuracy and installation reliability between the process chamber 1 and the gas channel 4.
[0032] The cylinder 41 of the process chamber 1 and the gas channel 4 are sealed together to prevent leakage. Otherwise, it will not only affect the external environment, but also reduce the free radicals entering the process chamber 1, affecting the process effect and work efficiency. Optionally, a sealing groove 14 is provided at the opening of the limiting groove 13, and the sealing element is a sealing ring 7. The sealing ring 7 is located in the sealing groove 14. The sealing groove 14 is pressed against the groove wall of the gas channel 4 and the limiting groove 13, realizing the sealed connection between the gas channel 4 and the process chamber 1.
[0033] The gas in gas source 3 is ionized through gas channel 4 to form plasma, specifically including active particles such as ions and free radicals. Ions form charged ions in gas channel 4, which generate kinetic energy in the vertical direction under the influence of the electric field, bombarding the first sieve plate 21, or passing through the first sieve hole 211 and bombarding the second sieve plate 22. Because the sieve plate assembly 2 is grounded, the ions lose charge and are conducted away. Free radicals, as gas clusters, can pass through the first sieve hole 211, gap 23, and second sieve hole 221 to enter the process chamber 1, reacting with the photoresist on the surface of the wafer 100 in the process chamber 1, achieving the purpose of photoresist removal. Since the charged ions are blocked outside the process chamber 1, thus avoiding bombardment of the wafer 100, the problem of damage to the wafer 100 is solved. Passivation of the wafer 100 is unnecessary, saving the passivation step, reducing process time, and improving efficiency.
[0034] The first sieve plate 21 is provided with a plurality of first sieve holes 211, and the second sieve plate 22 is provided with a plurality of second sieve holes 221. The plurality of first sieve holes 211 and the plurality of second sieve holes 221 are staggered. By increasing the number of first sieve holes 211 and second sieve holes 221, the amount of free radicals entering the process chamber 1 is increased, the contact area with the wafer 100 is increased, the reaction efficiency is improved, and thus the resist removal efficiency is improved.
[0035] The first sieve plate 21 and the second sieve plate 22 are both arranged parallel to the horizontal plane. The projections of the multiple first sieve holes 211 and multiple second sieve holes 221 on the horizontal plane are as follows: the multiple first sieve holes 211 and multiple second sieve holes 221 are arranged alternately and intermittently in the horizontal row, and the multiple first sieve holes 211 and multiple second sieve holes 221 are arranged alternately and intermittently in the vertical row. The multiple first sieve holes 211 and multiple second sieve holes 221 are evenly distributed on the horizontal plane, which ensures that the free radicals diffuse evenly into the process cavity 1 and make uniform contact with the wafer 100, thereby ensuring the adhesive removal efficiency. The shape and size of the first sieve holes 211 and the second sieve holes 221 are not limited. The shapes of the first sieve holes 211 and the second sieve holes 221 can be the same or different, and the opening sizes of the first sieve holes 211 and the second sieve holes 221 can be the same or different. The spacing between two adjacent first sieve holes 211 and the spacing between two adjacent second sieve holes 221 can be the same or different. This can be set according to requirements.
[0036] like Figure 4 As shown, exemplarily, both the first sieve hole 211 and the second sieve hole 221 are circular holes with the same opening size. Referring to the schematic projection of the first sieve hole 211 and the second sieve hole 221 onto a horizontal plane in the partial sieve plate assembly 2, the dashed and solid lines in the figure are used to distinguish the first sieve hole 211 and the second sieve hole 221. In the shown portion, the first sieve hole 211 and the second sieve hole 221 form a matrix arrangement of three rows and three columns of circular holes. A line connecting the center of the second sieve hole 221 in the second row of the first column is drawn to the center of the first sieve hole 211 in the second row of the second column, and a line connecting the center of the second sieve hole 221 in the second row of the first column is drawn to the center of the second sieve hole 221 in the first row of the second column. The included angle between the two lines is 45°. Similarly, the angle between the center of the first sieve hole 211 in the second row of the second column and the center of the second sieve hole 221 in the second row of the third column, and the center of the first sieve hole 211 in the second row of the second column and the center of the first sieve hole 211 in the first row of the third column, is 45°, and the spacing between the first sieve hole 211 and the second sieve hole 221 is the same. Figure 4 The schematic diagram of the partial sieve plate assembly 2 and the above description only illustrate the arrangement of the first sieve hole 211 and the second sieve hole 221. That is, the positions of the first sieve hole 211 of the first sieve plate 21 and the second sieve hole 221 of the second sieve plate 22 are staggered, thereby blocking the vertical movement of the plasma.
[0037] The process cavity 1 has an opening 11, and the sieve plate assembly 2 is located at the opening 11. That is, the process cavity 1 and the sieve plate assembly 2 are separate structures. The sieve plate assembly 2 can be installed on the process cavity 1 by means of fasteners or welding.
[0038] The shape of the sieve plate assembly 2 is adapted to the shape of the opening 11, and the cross-sectional area of the sieve plate assembly 2 is greater than or equal to the cross-sectional area of the opening 11. The shape and size of the first sieve plate 21 and the second sieve plate 22 can be adaptively designed according to the shape and size of the opening 11, but the cross-sectional area of the first sieve plate 21 and the second sieve plate 22 is not less than the cross-sectional area of the opening 11 to ensure that the opening 11 is completely blocked. If the opening 11, the first sieve plate 21 and the second sieve plate 22 are all circular, the cross-sectional area of the sieve plate assembly 2 is greater than the cross-sectional area of the opening 11. The sieve plate assembly 2 is located inside the process chamber 1 and installed on the inner wall of the process chamber 1, which facilitates installation and ensures that the opening 11 is completely blocked by the sieve plate assembly 2, avoiding the formation of gaps between them that could allow ions to pass through, thus improving reliability. Optionally, the first sieve plate 21 and the second sieve plate 22 are connected by screws, and the first sieve plate 21 and the inner wall of the process chamber 1 are connected by screws. Alternatively, the first sieve plate 21, the second sieve plate 22 and the process chamber 1 are all connected by screws. Optionally, the first sieve plate 21 is close to the inner wall of the process chamber 1, and the two are sealed together by a sealing ring to prevent gaps between the sieve plate assembly 2 and the process chamber 1 from causing ions to pass through.
[0039] The ICP descaling device also includes an annular guide ring 5. One end of the guide ring 5 is connected to the second sieve plate 22, and the other end faces the wafer 100 in the process chamber 1. Free radicals passing through the second sieve holes 221 of the second sieve plate 22 are guided by the guide ring 5 to act on the wafer 100 as much as possible, thus improving the reaction efficiency. The guide ring 5 and the wafer 100 are arranged on the same center line, further ensuring that the free radicals fully contact and interact with the wafer 100, improving the reaction efficiency. Exemplarily, the guide ring 5 is connected to the second sieve plate 22 by fasteners or welding.
[0040] The process chamber 1 is equipped with a wafer carrier 6 for supporting the wafer 100. The wafer carrier 6 is equipped with a heating element for heating the wafer 100. The heating element heats the wafer 100 as needed, increasing the surface temperature of the wafer 100 and thus increasing its reaction rate with free radicals, thereby improving work efficiency. For example, the heating element is an electric heating wire, and the heating wire is controlled by whether it is energized, which facilitates heating.
[0041] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.
Claims
1. An ICP adhesive removal device, characterized in that, The system includes a process chamber (1), a sieve assembly (2), a gas source (3), and a gas channel (4). The gas source (3) is located at the inlet end of the gas channel (4), and the sieve assembly (2) is located between the outlet end of the gas channel (4) and the process chamber (1). The process chamber (1) is used to house a wafer (100). The gas in the gas source (3) is ionized within the gas channel (4). The sieve assembly (2) includes a first sieve (21) and a second sieve (22), with a gap between them. (23) The first sieve plate (21) is provided with a first sieve hole (211), and the second sieve plate (22) is provided with a second sieve hole (221). The first sieve hole (211) and the second sieve hole (221) are staggered. The gas channel (4), the first sieve hole (211), the gap (23), the second sieve hole (221) and the process chamber (1) are connected, so that the free radicals formed by gas ionization can enter the process chamber (1), and the ions formed by gas ionization are blocked by the sieve plate assembly (2).
2. The ICP degumming equipment according to claim 1, characterized in that, The first sieve plate (21) is provided with a plurality of first sieve holes (211), and the second sieve plate (22) is provided with a plurality of second sieve holes (221). The plurality of first sieve holes (211) and the plurality of second sieve holes (221) are staggered.
3. The ICP degumming equipment according to claim 2, characterized in that, The first sieve plate (21) and the second sieve plate (22) are both arranged parallel to the horizontal plane. The projections of the multiple first sieve holes (211) and multiple second sieve holes (221) on the horizontal plane are as follows: the multiple first sieve holes (211) and multiple second sieve holes (221) are arranged alternately and intermittently in the horizontal row, the multiple first sieve holes (211) and multiple second sieve holes (221) are arranged alternately and intermittently in the vertical row, and the multiple first sieve holes (211) and multiple second sieve holes (221) are evenly distributed on the horizontal plane.
4. The ICP degumming equipment according to claim 1, characterized in that, The process cavity (1) has an opening (11), the sieve plate assembly (2) is located at the opening (11) and inside the process cavity (1), the first sieve plate (21) is located close to the opening (11), and the first sieve plate (21) is sealed to the inner wall of the process cavity (1).
5. The ICP degumming equipment according to claim 4, characterized in that, The shape of the sieve plate assembly (2) is adapted to the shape of the opening (11), and the cross-sectional area of the sieve plate assembly (2) is greater than or equal to the cross-sectional area of the opening (11). The sieve plate assembly (2) is located inside the process cavity (1) and installed on the inner wall of the process cavity (1).
6. The ICP degumming equipment according to claim 4, characterized in that, The process cavity (1) is provided with a mounting boss (12) on the outside. The mounting boss (12) has a limiting groove (13). The opening (11) is opened at the bottom of the limiting groove (13). The gas channel (4) is limited to the limiting groove (13), and the bottom of the gas channel (4) abuts against the bottom of the limiting groove (13).
7. The ICP degumming equipment according to claim 1, characterized in that, The process chamber (1) and the gas channel (4) are sealed together.
8. The ICP degumming equipment according to claim 1, characterized in that, It also includes a ring-shaped guide ring (5), one end of which is connected to the second sieve plate (22), and the other end is directed toward the wafer (100) in the process cavity (1).
9. The ICP adhesive removal equipment according to claim 8, characterized in that, The guide ring (5) and the wafer (100) are arranged along the same center line.
10. The ICP degumming equipment according to any one of claims 1-9, characterized in that, The process cavity (1) is provided with a wafer stage (6) for carrying the wafer (100), and the wafer stage (6) is provided with a heating element for heating the wafer (100).