Automatic distance adjusting mechanism for thickness detection probe of semiconductor wafer and automatic thickness detection system

Abstract

The utility model discloses a semiconductor wafer thickness detection probe automatic distance adjusting mechanism and a thickness automatic detection system, and the automatic distance adjusting mechanism comprises a first probe, a second probe, a height adjusting mechanism, and a driving mechanism. The first probe and the second probe are oppositely arranged up and down; the bottom output end of the height adjusting mechanism is connected with the first probe, an adjusting head is arranged at the top of the height adjusting mechanism, and the output end of the height adjusting mechanism can be controlled to drive the first probe to ascend and descend by rotating the adjusting head forwards and backwards; the output end of the driving mechanism is connected with the adjusting head of the height adjusting mechanism and used for driving the adjusting head to rotate forwards and backwards. A traditional manual adjustment mode can be replaced by an automatic mechanism, the adjustment efficiency is improved, and errors caused by manual adjustment are reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the thickness detection technical field of semiconductor wafer, especially a kind of thickness detection probe automatic distance adjusting mechanism and thickness automatic detection system of semiconductor wafer. BACKGROUND

[0002] In the manufacturing process of semiconductor wafer, its thickness and thickness deviation need to be measured. Usually, semiconductor wafer manufacturing enterprises need to measure and monitor the thickness, thickness deviation and other parameters of wafers in different links of the whole process to improve the product quality of each process, so as to ensure that the parameter indexes of the final product meet the specifications or meet the requirements of customers.

[0003] In the semiconductor manufacturing process, due to the difference in thickness of different types of wafers, the distance between the upper and lower detection probes needs to be adjusted during thickness detection. However, the existing detection probe distance adjustment method mainly relies on manual operation, which is not only inefficient but also prone to human error, affecting detection accuracy and consistency. In order to solve this problem, a mechanism is designed to automatically adjust the distance between the probes to achieve fast and accurate detection of semiconductor wafers of different thicknesses. SUMMARY

[0004] According to the utility model embodiment, a kind of thickness detection probe automatic distance adjusting mechanism of semiconductor wafer is provided, including: first probe, second probe, height adjustment mechanism and drive mechanism;

[0005] The first probe and the second probe are arranged oppositely above and below;

[0006] The bottom output end of the height adjustment mechanism is connected with the first probe, and the top of the height adjustment mechanism is provided with an adjusting head. By rotating the adjusting head forward and backward, the output end of the height adjustment mechanism can drive the first probe to move up and down.

[0007] The output end of the drive mechanism is connected with the adjusting head of the height adjustment mechanism, for driving the adjusting head to rotate forward and backward.

[0008] Further, the drive mechanism includes a bracket, a motor, a transmission rod and a transmission mechanism.

[0009] The bracket is located outside the height adjustment mechanism.

[0010] The motor is arranged on the bracket.

[0011] The transmission rod is rotatably arranged on the bracket, and the bottom end of the transmission rod is connected with the adjusting head of the height adjustment mechanism.

[0012] The transmission mechanism connects the transmission rod and the output end of the motor, for transmitting the power of the motor to the transmission rod to drive the transmission rod to rotate.

[0013] Furthermore, the transmission mechanism is a belt drive mechanism.

[0014] Furthermore, the bottom end of the transmission rod is provided with an assembly block, and the adjusting head of the height adjustment mechanism is provided with an assembly groove, which engages with the assembly block.

[0015] Furthermore, it also includes: a zero-position frame, a zero-position sensor, and the device under test;

[0016] The zero-position frame is mounted on the support.

[0017] The zero-position sensor is mounted on the zero-position frame;

[0018] The test piece is placed on the first probe.

[0019] Furthermore, it also includes: a first mounting bracket, a second mounting bracket, and a mounting base;

[0020] One end of the first mounting bracket is connected to the height adjustment mechanism;

[0021] One end of the second mounting bracket is connected to the second probe, and the second mounting bracket is positioned opposite to the first mounting bracket.

[0022] The mounting bracket connects to the other end of the first mounting bracket and the second mounting bracket.

[0023] Furthermore, it also includes: a first thread-arranging mechanism and a second thread-arranging mechanism;

[0024] The first cable management mechanism is installed on the first mounting bracket and mounting base, and is used to manage the data transmission cable of the first probe.

[0025] The second cable management mechanism is mounted on the second mounting bracket and is used to manage the data transmission cable of the second probe.

[0026] Furthermore, the first cable management mechanism includes: multiple first cable management frames, a first cable management channel, and a first baffle;

[0027] Multiple first cable management racks are sequentially arranged at the bottom of the first mounting frame, and a cable management channel is formed between the multiple first cable management racks and the first mounting frame;

[0028] The first cable management channel is located on the mounting base;

[0029] The first baffle is set on the first cable management channel.

[0030] Furthermore, the second cable management mechanism includes: a second cable management channel and multiple second baffles;

[0031] The second cable management channel is located on the second mounting bracket;

[0032] Multiple second baffles are sequentially installed on multiple second cable management channels.

[0033] According to another embodiment of the present invention, an automatic thickness detection system is provided, which includes the automatic distance adjustment mechanism of the thickness detection probe of the semiconductor wafer in the previous embodiment.

[0034] An automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of the present invention replaces the traditional manual adjustment method with an automated mechanism, thereby improving adjustment efficiency and reducing errors caused by manual adjustment.

[0035] It should be understood that both the foregoing general description and the following detailed description are exemplary and intended to provide further illustration of the claimed technology. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the overall structure of an automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of the present invention.

[0037] Figure 2 This is a three-dimensional structural diagram of the drive mechanism of an automatic distance adjustment mechanism for a thickness detection probe of a semiconductor wafer according to an embodiment of the present invention.

[0038] Figure 3 This is a three-dimensional structural diagram of the first wire-arranging mechanism of an automatic distance adjustment mechanism for a thickness detection probe of a semiconductor wafer according to an embodiment of the present invention.

[0039] Figure 4 This is a three-dimensional structural diagram of the first wire-arranging mechanism of an automatic distance adjustment mechanism for a thickness detection probe of a semiconductor wafer according to an embodiment of the present invention.

[0040] Figure 5 This is a three-dimensional structural diagram of an automatic thickness detection system according to an embodiment of the present invention. Detailed Implementation

[0041] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, further illustrating the present invention.

[0042] First, combine Figures 1-4 This invention describes an automatic spacing adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of the present invention. It is used to automatically adjust the spacing of the detection probe and has a wide range of applications.

[0043] like Figures 1-4 As shown in the figure, an automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of the present invention includes a first probe 100, a second probe 200, a height adjustment mechanism 300, and a driving mechanism.

[0044] Specifically, such as Figures 1-2As shown, the first probe 100 and the second probe 200 are arranged vertically opposite each other and are used to measure the thickness of a semiconductor wafer.

[0045] Specifically, such as Figures 1-2 As shown, the bottom output end of the height adjustment mechanism 300 (prior art) is connected to the first probe 100. The top of the height adjustment mechanism 300 is provided with an adjustment head 301. By rotating the adjustment head 301 in both directions, the output end of the height adjustment mechanism 300 can be controlled to drive the first probe 100 to move up and down.

[0046] Specifically, such as Figures 1-2 As shown, the output end of the drive mechanism is connected to the adjusting head 301 of the height adjustment mechanism 300, and is used to drive the adjusting head 301 to rotate in both directions. The drive mechanism includes: a bracket 401, a motor 402, a transmission rod 403, and a transmission mechanism 404. The bracket 401 is located on the outside of the height adjustment mechanism 300; the motor 402 is mounted on the bracket 401; the transmission rod 403 is rotatably mounted on the bracket 401, and the bottom end of the transmission rod 403 is connected to the adjusting head 301 of the height adjustment mechanism 300; the transmission mechanism 404 connects the transmission rod 403 and the output end of the motor 402, and is used to transmit the power of the motor 402 to the transmission rod 403, drive the transmission rod 403 to rotate, and then drive the adjusting head 301 of the height adjustment mechanism 300 to rotate, further driving the first probe 100 to perform lifting and lowering movements, adjusting the distance between the first probe 100 and the second probe 200 to adapt to semiconductor wafers of different thicknesses.

[0047] Furthermore, such as Figures 1-2 As shown, transmission mechanism 404 is a belt drive mechanism.

[0048] Furthermore, such as Figures 1-2 As shown, the bottom end of the transmission rod 403 is provided with an assembly block 405, and the adjusting head 301 of the height adjustment mechanism 300 is provided with an assembly groove 406, which engages with the assembly block 405. The assembly block 405 and the assembly groove 406 facilitate the assembly between the adjusting head 301 of the height adjustment mechanism 300 and the transmission rod 403.

[0049] Furthermore, such as Figures 1-2 As shown in the figure, an automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of the present invention further includes: a zero-position frame 501, a zero-position sensor 502, and a measured component 503; the zero-position frame 501 is disposed on a support 401; the zero-position sensor 502 is disposed on the zero-position frame 501; the measured component 503 is disposed on a first probe 100 and moves together with the first probe 100. When the zero-position sensor 502 detects the measured component 503, it indicates that the first probe 100 has reached the zero position.

[0050] Furthermore, such as Figure 1 , 3As shown in Figure 4, an automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of the present invention further includes: a first mounting bracket 601, a second mounting bracket 602, and a mounting base 603; one end of the first mounting bracket 601 is connected to the height adjustment mechanism 300; one end of the second mounting bracket 602 is connected to the second probe 200, and the second mounting bracket 602 is disposed opposite to the first mounting bracket 601; the mounting base 603 connects the other ends of the first mounting bracket 601 and the second mounting bracket 602.

[0051] Furthermore, such as Figure 1 , 3 As shown in Figure 4, an automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe according to an embodiment of this utility model further includes: a first cable management mechanism and a second cable management mechanism; the first cable management mechanism is disposed on the first mounting bracket 601 and the mounting base 603, and is used to manage the data transmission lines of the first probe 100; the second cable management mechanism is disposed on the second mounting bracket 602, and is used to manage the data transmission lines of the second probe 200. Through the arrangement of the first cable management mechanism and the second cable management mechanism, the data transmission lines of the first probe 100 and the second probe 200 can be well organized.

[0052] Furthermore, such as Figure 1 , 3 As shown, the first cable management mechanism includes: multiple first cable management frames 701, a first cable management groove 702, and a first baffle 703; the multiple first cable management frames 701 are sequentially arranged at the bottom of the first mounting frame 601, forming a cable management channel between the multiple first cable management frames 701 and the first mounting frame 601; the first cable management groove 702 is formed on the mounting base 603; the first baffle 703 is disposed on the first cable management groove 702 to prevent the data transmission line of the first probe 100 from falling off the first cable management groove 702, and is used to support the data transmission line of the first probe 100. When cable management is required, the data transmission line of the first probe 100 is sequentially passed through the cable management channel and the first cable management groove 702, thereby completing the cable management.

[0053] Furthermore, such as Figure 1 , 3 As shown, the second cable management mechanism includes a second cable management groove 801 and multiple second baffles 802. The second cable management groove 801 is formed on the second mounting bracket 602. The multiple second baffles 802 are sequentially arranged on the multiple second cable management grooves 801, and the multiple second baffles 802 are used to press down the data transmission line of the second probe 200 to prevent it from becoming tangled. When cable management is required, the data transmission line of the second probe 200 is passed through the second cable management groove 801, thereby completing the cable management.

[0054] Working principle:

[0055] When it is necessary to adjust the distance between the first probe 100 and the second probe 200, the motor 402 is controlled to move, and the power of the motor 402 is transmitted to the transmission rod 403 by the transmission mechanism 404, driving the transmission rod 403 to rotate. The transmission rod 403 drives the adjusting head 301 of the height adjustment mechanism 300 to rotate, further driving the first probe 100 to move up and down, adjusting the distance between the first probe 100 and the second probe 200 to a suitable distance to adapt to semiconductor wafers of different thicknesses.

[0056] As described above, in an embodiment of the present invention, an automatic distance adjustment mechanism for a semiconductor wafer thickness detection probe replaces the traditional manual adjustment method with an automated mechanism, thereby improving adjustment efficiency and reducing errors caused by manual adjustment.

[0057] The above combined with the appendix Figures 1-4 An automatic distance adjustment mechanism for a thickness detection probe of a semiconductor wafer according to an embodiment of the present invention is described. Furthermore, the present invention can also be applied to an automatic thickness detection system.

[0058] like Figure 5 As shown, according to another embodiment of the present invention, an automatic thickness detection system is provided, including the automatic distance adjustment mechanism 1 of the semiconductor wafer thickness detection probe of the previous embodiment, so as to adjust the probe distance more conveniently, efficiently and accurately.

[0059] It should be noted that, in this specification, the terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0060] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. An automatic distance adjustment mechanism for a thickness detection probe of a semiconductor wafer, characterized in that, Includes: a first probe, a second probe, a height adjustment mechanism, and a drive mechanism; The first probe and the second probe are positioned vertically opposite each other. The bottom output end of the height adjustment mechanism is connected to the first probe, and the top of the height adjustment mechanism is provided with an adjustment head. By rotating the adjustment head in both directions, the output end of the height adjustment mechanism can be controlled to drive the first probe to move up and down. The output end of the drive mechanism is connected to the adjusting head of the height adjustment mechanism, and is used to drive the adjusting head to rotate in both directions.

2. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 1, characterized in that, The drive mechanism includes: a bracket, a motor, a transmission rod, and a transmission mechanism; The bracket is located outside the height adjustment mechanism; The motor is mounted on the bracket; The transmission rod is rotatably mounted on the bracket, and the bottom end of the transmission rod is connected to the adjusting head of the height adjustment mechanism. The transmission mechanism connects the transmission rod and the output end of the motor, and is used to transmit the power of the motor to the transmission rod to drive the transmission rod to rotate.

3. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 2, characterized in that, The transmission mechanism is a belt drive mechanism.

4. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 2, characterized in that, The bottom end of the transmission rod is provided with an assembly block, and the adjusting head of the height adjustment mechanism is provided with an assembly groove, which is engaged with the assembly block.

5. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 2, characterized in that, It also includes: zero-position frame, zero-position sensor, and the device under test; The zero-position frame is mounted on the bracket; The zero-position sensor is mounted on the zero-position frame; The device under test is mounted on the first probe.

6. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 1, characterized in that, It also includes: a first mounting bracket, a second mounting bracket, and a mounting base; One end of the first mounting bracket is connected to the height adjustment mechanism; One end of the second mounting bracket is connected to the second probe, and the second mounting bracket is arranged opposite to the first mounting bracket; The mounting base is connected to the other end of the first mounting bracket and the second mounting bracket.

7. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 6, characterized in that, It also includes: a first thread-laying mechanism and a second thread-laying mechanism; The first cable management mechanism is mounted on the first mounting frame and the mounting base, and is used to manage the data transmission cable of the first probe. The second cable management mechanism is mounted on the second mounting bracket and is used to manage the data transmission cable of the second probe.

8. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 7, characterized in that, The first cable management mechanism includes: a plurality of first cable management frames, a first cable management channel, and a first baffle; The plurality of first cable management racks are sequentially arranged at the bottom of the first mounting frame, and a cable management channel is formed between the plurality of first cable management racks and the first mounting frame; The first cable management groove is formed on the mounting base; The first baffle is disposed on the first cable management groove.

9. The automatic distance adjustment mechanism for the thickness detection probe of a semiconductor wafer as described in claim 7, characterized in that, The second cable management mechanism includes: a second cable management groove and a plurality of second baffles; The second cable management channel is formed on the second mounting bracket; The plurality of second baffles are sequentially arranged on the plurality of second cable management grooves.

10. An automatic thickness detection system, characterized in that, The invention comprises an automatic distance adjustment mechanism for a thickness detection probe of a semiconductor wafer as described in any one of claims 1 to 9.

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