Rotary cylindrical magnetron sputtering target

Abstract

The utility model discloses a rotary cylindrical magnetron sputtering target which comprises a cover plate connected with a vacuum chamber, a cathode assembly and an anode assembly which are insulated from each other are arranged on the cover plate, and the anode assembly is located on the periphery of the cathode assembly; the cathode assembly comprises a target material, a magnet assembly and a cathode electrode stem, one end of the cathode electrode stem is connected with the negative electrode of the power supply, the other end is connected with the magnet assembly, the magnet assembly surrounds the periphery of the upper part of the target material, and the lower part of the target material faces a substrate to be coated; the target material is of a hollow cylinder structure, and a static center magnet is arranged at the hollow position. The end part of the target material is rotationally connected with the rotary driving piece so as to realize uniform-speed rotation of the target material; after the power supply is powered on, under the action of an electromagnetic field, the process gas in the vacuum chamber forms plasmas to bombard the target material and form target material particles, and the target material particles are sputtered onto the substrate. The device has the characteristics of compact structure, simplicity in operation, stability in operation, benefit for improving the utilization rate of the target material and the like, and obviously improves the coating efficiency of the substrate.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor vacuum coating technology, specifically relating to a rotating cylindrical magnetron sputtering target. Background Technology

[0002] In recent years, the electronics and semiconductor industry has developed rapidly, and the application of magnetron sputtering has become increasingly widespread. Traditional strip sputtering targets, during sputtering, only etch localized areas of the target material, forming noticeable etching rings, resulting in a utilization rate of less than 25%. This low target utilization rate not only necessitates frequent target replacements and maintenance, increasing costs, but also reduces production efficiency. Therefore, the utilization rate of magnetron sputtering targets and sputtering yield have always been issues of widespread concern and focus for researchers. Utility Model Content

[0003] The technical problem to be solved by this utility model is to provide a rotary cylindrical magnetron sputtering target that is compact in structure, has high target material utilization rate and is conducive to improving production efficiency, in order to overcome the shortcomings of the existing technology.

[0004] To achieve the above objectives, the present invention may adopt the following technical solution:

[0005] A rotating cylindrical magnetron sputtering target includes a cover plate connected to a vacuum chamber. The cover plate has a mutually insulated cathode assembly and an anode assembly, with the anode assembly located around the outer periphery of the cathode assembly. The cathode assembly includes a target material, a magnet assembly, and a cathode electrode rod. One end of the cathode electrode rod is connected to the negative terminal of a power supply, and the other end is connected to the magnet assembly. The magnet assembly surrounds the upper outer periphery of the target material, with the lower part of the target material facing the substrate to be coated. The target material is a hollow cylindrical structure with a stationary central magnet installed in the hollow portion. The end of the target material is rotatably connected to a rotating drive component to achieve uniform rotation of the target material within the vacuum chamber. When the power supply is turned on, under the influence of an electromagnetic field, the process gas within the vacuum chamber forms plasma to bombard the target material, forming target particles, which are then sputtered onto the substrate.

[0006] As a further improvement of this utility model, the magnet assembly includes a long magnet and a magnet base. The magnet base is connected to the cathode electrode rod and surrounds the upper outer periphery of the target material. The long magnets are respectively disposed on both sides of the magnet base and located on both sides of the target material.

[0007] As a further improvement of this utility model, the N pole of the long magnet is oriented in the opposite direction to the N pole of the central magnet.

[0008] As a further improvement of this utility model, the magnet base has an inverted "U" shaped structure.

[0009] As a further improvement of this utility model, an insulating ring is provided between the top of the magnet base and the bottom of the cover plate.

[0010] As a further improvement of this utility model, a sealing ring is provided between the insulating ring and the magnet seat and the cover plate.

[0011] As a further improvement of this utility model, the cathode electrode rod passes through the middle of the cover plate, and an insulating sleeve is provided between the cathode electrode rod and the cover plate.

[0012] As a further improvement of this utility model, the anode assembly includes a vertical anode plate and an upper anode plate that are perpendicular to each other. One end of the vertical anode plate is connected to the bottom of the cover plate, and the other end of the vertical anode plate is connected to the upper anode plate. The target material and the magnet assembly are enclosed in the installation space formed by the cover plate, the vertical anode plate and the upper anode plate.

[0013] As a further improvement of this utility model, a scanning carriage is provided in the vacuum chamber, which is used to carry the substrate and move back and forth under the target material.

[0014] As a further improvement of this utility model, a sealing ring is provided at the bottom of the cover plate to achieve a sealed connection between the cover plate and the vacuum chamber.

[0015] Compared with the prior art, the advantages of this utility model are:

[0016] This invention relates to a rotary cylindrical magnetron sputtering target. By insulated cathode and anode components are mounted on a cover plate, with the anode component positioned around the outer periphery of the cathode component, the sputtering target is connected to a power source. The cathode component comprises the target material, a magnet assembly, and a cathode electrode rod. The two ends of the cathode electrode rod are connected to the negative terminal of the power source and the magnet assembly, respectively. The magnet assembly surrounds the upper outer periphery of the target material, with the lower part of the target material facing the substrate to be coated. A stationary central magnet is also installed in the hollow center of the target material, creating a uniform orthogonal electromagnetic field around the target material between the anode, cathode, and magnet. When the power source is activated, the process gas in the vacuum chamber forms plasma under the influence of the electromagnetic field, bombarding the target material and forming target particles that are sputtered onto the substrate, thus achieving substrate coating. This method is simple to operate, highly stable, significantly improves target utilization, reduces the frequency of target replacement, lowers costs, and increases production efficiency. At the same time, the end of the target material is rotatably connected to the rotating drive component, which enables the target material to rotate at a constant speed in the vacuum chamber, achieving the purpose of uniform coating of the substrate and avoiding coating dead corners. Attached Figure Description

[0017] Figure 1 This is a schematic diagram illustrating the structural principle of the rotating cylindrical magnetron sputtering target in a specific embodiment of the present invention;

[0018] Legend: 1. Handle; 2. Cover plate; 3. Sealing ring; 4. Anode vertical plate; 5. Anode upper plate; 6. Target material; 7. Scanning carriage; 8. Substrate; 9. Central magnet; 10. Long magnet; 11. Magnet holder; 12. Insulating ring; 13. Insulating sleeve; 14. Cathode electrode rod. Detailed Implementation

[0019] The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but this does not limit the scope of protection of the present invention.

[0020] In the description of this utility model, it should be understood that the terms "side", "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "multiple" means two or more, unless otherwise explicitly specified.

[0022] Example

[0023] like Figure 1 As shown, the rotary cylindrical magnetron sputtering target of this invention includes a cover plate 2 connected to a vacuum chamber and grounded. The cover plate 2 has a cathode assembly and an anode assembly that are insulated from each other, with the anode assembly located on the outer periphery of the cathode assembly. The cathode assembly includes a target material 6, a magnet assembly, and a cathode electrode rod 14. One end of the cathode electrode rod 14 is connected to the negative terminal of a power supply, and the other end is connected to the magnet assembly. The magnet assembly surrounds the upper outer periphery of the target material 6, with the lower part of the target material 6 facing the substrate 8 to be coated. The target material 6 is a hollow cylindrical structure with a stationary central magnet 9 installed in the hollow portion. The end of the target material 6 is rotatably connected to a rotary drive component to achieve uniform rotation of the target material 6 within the vacuum chamber. When the power supply is turned on, under the action of the electromagnetic field, the process gas in the vacuum chamber forms plasma to bombard the target material 6, forming target particles, which are then sputtered onto the substrate 8.

[0024] In this embodiment, the rotation drive can be a drive motor, which is located outside the vacuum chamber. It is easy to install and has stable transmission, so that the target 6 can be bombarded while rotating, thus improving the utilization rate of the target 6.

[0025] In this embodiment, by setting mutually insulated cathode and anode components on the cover plate 2, and placing the anode component on the outer periphery of the cathode component, the sputtering target is connected to the power supply. The cathode component is composed of the target material 6, the magnet component, and the cathode electrode rod 14. The two ends of the cathode electrode rod 14 are connected to the negative terminal of the power supply and the magnet component, respectively. The magnet component surrounds the upper outer periphery of the target material 6, and the lower part of the target material 6 faces the substrate 8 to be coated. At the same time, a stationary central magnet 10 is installed in the hollow part of the target material 6, thus forming a uniform orthogonal electromagnetic field around the target material 6 with the anode and cathode and the magnet. When the power supply is turned on, under the action of the electromagnetic field, the process gas in the vacuum chamber forms plasma to bombard the target material 6 and form target particles to be sputtered onto the substrate 8, thus achieving substrate coating. The operation is simple and highly stable, greatly improving the utilization rate of the target material, reducing the frequency of target material replacement, reducing costs, and improving production efficiency. At the same time, the end of the target material 6 is rotatably connected to the rotating drive component, which realizes the uniform rotation of the target material in the vacuum chamber, achieving the purpose of uniform coating of the substrate and avoiding coating dead corners.

[0026] like Figure 1 As shown, the magnet assembly includes a long magnet 10 and a magnet base 11. The magnet base 11 is connected to the cathode electrode rod 14. The magnet base 11, which has an inverted "U"-shaped structure, surrounds the upper outer periphery of the target material 6. The long magnets 10 are respectively disposed on both sides of the magnet base 11 and located on both sides of the target material 6, so as to realize that the target material 6 is wrapped in a uniform electromagnetic field, improve the uniformity of bombardment of the target material 6, and avoid the occurrence of bombardment dead zones.

[0027] like Figure 1 As shown, both the central magnet 9 and the long magnet 10 are permanent magnets. The N pole of the long magnet 10 is positioned upwards, while the N pole of the central magnet 9 is positioned downwards, to form a uniform magnetic field. This ensures that every position can be sputtered during magnetron sputtering, improving the utilization rate of the target material. During operation, only the target material 6 rotates, while the central magnet 9 and the long magnet 10 remain stationary, resulting in a stable and unchanging electromagnetic field.

[0028] In this embodiment, an insulating ring 12 is provided between the top of the magnet base 11 and the bottom of the cover plate 2, and a sealing ring 3 is provided between the insulating ring 12 and both the magnet base 11 and the cover plate 2. This ensures both safe insulation between the magnet base 11 and the cover plate 2 and that the vacuum chamber is in a preset high vacuum state.

[0029] like Figure 1As shown, the cathode electrode rod 14 passes through the middle of the cover plate 2, and an insulating sleeve 13 is provided between the cathode electrode rod 14 and the cover plate 2 to achieve safe insulation.

[0030] like Figure 1 As shown, the anode assembly includes mutually perpendicular anode vertical plates 4 and anode upper plates 5. One end of the anode vertical plate 4 is connected to the bottom of the cover plate 2, and the other end of the anode vertical plate 4 is connected to the anode upper plate 5. The target material 6 and the magnet assembly are enclosed within the installation space formed by the cover plate 2, the anode vertical plate 4, and the anode upper plate 5. Moreover, there is a certain gap at the bottom of the installation space to expose the lower part of the target material 6.

[0031] like Figure 1 As shown, a scanning carriage 7 is provided inside the vacuum chamber. The scanning carriage 7 is used to carry the substrate 8 and move it back and forth below the target material 6. The scanning carriage 7 can adopt a conventional configuration in this field, which will not be described in detail here.

[0032] like Figure 1 As shown, a sealing ring 3 is provided at the bottom of the cover plate 2 to achieve a sealed connection between the cover plate 2 and the vacuum chamber, ensuring that the vacuum chamber maintains the high vacuum environment required for sputtering coating.

[0033] In this embodiment, during sputtering deposition, a certain amount of argon gas is first introduced into the vacuum chamber to stabilize the chamber pressure. The power supply is then turned on, and under the influence of an electromagnetic field, the argon gas ionizes to form argon plasma. This argon plasma bombards the target material 6, sputtering target particles onto the substrate 8. Simultaneously, the substrate 8 reciprocates under the drive of the scanning carriage 7, forming a uniform thin film on its surface. Because the target material 6 rotates continuously, the etching ring covers the entire surface of the target material 6, significantly improving the utilization rate of the target material 6.

[0034] While the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention, or modify them into equivalent embodiments, without departing from the spirit and technical essence of the present invention. Therefore, any simple modifications, equivalent substitutions, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the technical solutions of the present invention, shall still fall within the protection scope of the present invention.

Claims

1. A rotating cylindrical magnetron sputtering target, characterized in that, The system includes a cover plate (2) connected to a vacuum chamber. The cover plate (2) is provided with a cathode assembly and an anode assembly that are insulated from each other. The anode assembly is located on the outer periphery of the cathode assembly. The cathode assembly includes a target material (6), a magnet assembly, and a cathode electrode rod (14). One end of the cathode electrode rod (14) is connected to the negative terminal of the power supply, and the other end of the cathode electrode rod (14) is connected to the magnet assembly. The magnet assembly surrounds the upper outer periphery of the target material (6), and the lower part of the target material (6) faces the substrate (8) to be coated. The target material (6) is a hollow cylindrical structure with a stationary central magnet (9) installed in the hollow part. The end of the target material (6) is rotatably connected to a rotating drive to achieve uniform rotation of the target material (6) in the vacuum chamber. When the power supply is turned on, under the action of the electromagnetic field, the process gas in the vacuum chamber forms plasma to bombard the target material (6) and form target particles. The target particles are sputtered onto the substrate (8).

2. The rotating cylindrical magnetron sputtering target according to claim 1, characterized in that, The magnet assembly includes a long magnet (10) and a magnet base (11). The magnet base (11) is connected to the cathode electrode rod (14). The magnet base (11) surrounds the upper outer periphery of the target material (6). The long magnets (10) are respectively disposed on both sides of the magnet base (11) and located on both sides of the target material (6).

3. The rotating cylindrical magnetron sputtering target according to claim 2, characterized in that, The N pole of the long magnet (10) is oriented in the opposite direction to the N pole of the central magnet (9).

4. The rotating cylindrical magnetron sputtering target according to claim 2, characterized in that, The magnet base (11) has an inverted "U" shaped structure.

5. The rotating cylindrical magnetron sputtering target according to claim 2, characterized in that, An insulating ring (12) is provided between the top of the magnet base (11) and the bottom of the cover plate (2).

6. The rotating cylindrical magnetron sputtering target according to claim 5, characterized in that, A sealing ring (3) is provided between the insulating ring (12) and the magnet base (11) and the cover plate (2).

7. The rotating cylindrical magnetron sputtering target according to any one of claims 1 to 6, characterized in that, The cathode electrode rod (14) passes through the middle of the cover plate (2), and an insulating sleeve (13) is provided between the cathode electrode rod (14) and the cover plate (2).

8. The rotating cylindrical magnetron sputtering target according to any one of claims 1 to 6, characterized in that, The anode assembly includes a vertical anode plate (4) and an upper anode plate (5) that are perpendicular to each other. One end of the vertical anode plate (4) is connected to the bottom of the cover plate (2), and the other end of the vertical anode plate (4) is connected to the upper anode plate (5). The target material (6) and the magnet assembly are enclosed in the installation space formed by the cover plate (2), the vertical anode plate (4), and the upper anode plate (5).

9. The rotating cylindrical magnetron sputtering target according to any one of claims 1 to 6, characterized in that, The vacuum chamber is equipped with a scanning carriage (7), which is used to carry the substrate (8) and move back and forth under the target (6).

10. The rotating cylindrical magnetron sputtering target according to any one of claims 1 to 6, characterized in that, The bottom of the cover plate (2) is provided with a sealing ring (3) to achieve a sealed connection between the cover plate (2) and the vacuum chamber.

Images