Perovskite photovoltaic module and power generation device

By introducing an isolation layer into perovskite photovoltaic modules, the problem of poor wettability between hole transport materials and conductive glass is solved, resulting in more uniform hole transport layer coverage and higher module efficiency.

CN223844183UActive Publication Date: 2026-01-27GUANGDONG MAILUO ENERGY TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202422786843.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-11-15
Publication Date
2026-01-27
Estimated Expiration
2034-11-15

AI Technical Summary

Technical Problem

In existing perovskite solar cells, the poor wettability between the hole transport material and the conductive glass results in the material not being able to uniformly cover the substrate, which affects the device performance.

Method used

Introducing an isolation layer into perovskite photovoltaic modules optimizes the contact between hole transport materials and transparent conductive layers. By adding a protective layer between the first electrode layer and the hole transport layer, wettability is improved and selective coverage is achieved.

Benefits of technology

It enhances the uniformity and thin coverage of the hole transport layer, reduces carrier recombination, and improves the efficiency of perovskite photovoltaic modules.

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Abstract

The utility model relates to a perovskite photovoltaic assembly and a power generation device. The perovskite photovoltaic module comprises a first electrode layer, an isolation layer, a light absorption layer, a second charge transport layer and a second electrode layer which are sequentially stacked from bottom to top. According to the perovskite photovoltaic module of the utility model, the isolation layer can reduce unexpected carrier recombination in the perovskite photovoltaic module, and the efficiency of the perovskite photovoltaic module is improved.
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Description

Technical Field

[0001] This utility model relates to the field of solar cell technology, and in particular to a perovskite photovoltaic module and power generation device. Background Technology

[0002] Converting light energy into electrical energy using solar cells is a crucial way to alleviate the energy crisis. Currently, the manufacturing process of mainstream silicon-based solar cells is energy-intensive and difficult to improve in terms of efficiency, thus spurring research into next-generation photovoltaic technologies. Over the past decade, the single-cell efficiency of perovskite solar cells has exceeded 26%. Therefore, simplifying the manufacturing process while improving device efficiency and stability is vital for its commercialization.

[0003] Hole transport layers play a crucial role in optimizing the performance of inverted perovskite solar cells, particularly in improving cell efficiency and long-term stability. However, due to the poor wettability between hole transport materials and conductive glass, the material often fails to uniformly cover the substrate surface, affecting the overall performance of the device. Utility Model Content

[0004] Therefore, it is necessary to provide a perovskite photovoltaic module and power generation device to address the problem of poor wettability between hole transport materials and conductive glass.

[0005] A perovskite photovoltaic module includes a first electrode layer, an isolation layer, a light-absorbing layer, a second charge transport layer, and a second electrode layer stacked sequentially from bottom to top.

[0006] In the aforementioned perovskite photovoltaic modules, the isolation layer can reduce unwanted carrier recombination in the perovskite photovoltaic modules, thereby improving the efficiency of the perovskite photovoltaic modules.

[0007] In one embodiment, the first electrode layer is a transparent conductive layer containing at least one of fluorine-doped tin oxide, tin-doped indium oxide, zinc-doped indium oxide, aluminum-doped zinc oxide, tungsten-doped indium oxide, molybdenum-doped indium oxide, zinc stannate, titanium-doped indium oxide, hydrogen-doped indium oxide, and antimony-doped indium oxide; the second electrode layer contains at least one of ITO, Cu, Au, and Ag.

[0008] In one embodiment, the thickness of the isolation layer is 1~100nm.

[0009] In one embodiment, the thickness of the isolation layer is 35-70 nm.

[0010] In one embodiment, the insulating layer contains alumina (Al2O3), silicon dioxide (SiO2), zirconium oxide (ZrO2), tantalum oxide (Ta2O5), and titanium oxide (TiO2). 2)At least one of the following: magnesium oxide (MgO), yttrium oxide (Y2O3), beryllium oxide (BeO), lanthanum oxide (La2O3), niobium oxide (Nb2O5), scandium oxide (Sc2O3), cesium oxide (Cs2O), barium titanate (BaTiO3), and germanium oxide (GeO2).

[0011] In one embodiment, the light-absorbing layer is a composite light-absorbing layer, which includes a first charge transport layer and a perovskite thin film layer.

[0012] In one embodiment, the thickness of the composite light-absorbing layer is 300~1000nm.

[0013] In one embodiment, the composite light-absorbing layer further includes a mixing layer between the first charge transport layer and the perovskite thin film layer.

[0014] In one embodiment, the hybrid layer contains at least one of a self-assembled monolayer material, PTAA, NiO, P3HT, SnO2, TiO2, and perovskite, and the thickness of the hybrid layer is 1~50 nm.

[0015] In one embodiment, the light-absorbing layer is a perovskite thin film layer, and a first charge transport layer is further included between the isolation layer and the perovskite thin film layer.

[0016] In one embodiment, the first charge transport layer is a hole transport layer; the thickness of the hole transport layer is 20~50nm; the hole transport layer contains at least one of a self-assembled monolayer material, PTAA, NiO, P3HT, SnO2, and TiO2.

[0017] In one embodiment, the self-assembled monolayer material contains at least one anchoring group selected from carboxylic acid group, boric acid group, mercapto group, siloxane group, sulfonic acid group, o-diphenol group, phenol, and silicate group.

[0018] In one embodiment, the self-assembled monolayer material is MeO-4PACz, 4PACz, or (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo[lmn]-[3,8]phenanthridine-2(1H)-yl)propyl)phosphonic acid. The compound (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo[lmn]-[3,8]phenanthridine-2(1H)-yl)propyl)phosphonic acid, abbreviated as NDP, has the following structure:

[0019] .

[0020] In one embodiment, the perovskite has a band gap of 1.2-2.3 eV.

[0021] In one embodiment, the thickness of the perovskite thin film layer is 300~1000 nm.

[0022] In one embodiment, the second charge transport layer is an electron transport layer; the electron transport layer contains PCBM and C. 60 At least one of SnO2, ZnO, copper phthalocyanine, P3HT, and Spiro-OMeTAD.

[0023] In one embodiment, the perovskite photovoltaic module is a flexible perovskite photovoltaic module, and the flexible perovskite photovoltaic module further includes a flexible substrate, which is disposed on the side of the first electrode layer away from the isolation layer.

[0024] In one embodiment, the flexible substrate contains at least one of stainless steel, aluminum, copper, polyimide (PI), and polyethylene terephthalate (PET).

[0025] This invention also provides a tandem battery, including the perovskite photovoltaic module described above.

[0026] This invention also provides a power generation device, including the perovskite photovoltaic module as described above.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] This invention discloses a perovskite photovoltaic module and power generation device. The isolation layer reduces unwanted carrier recombination in the perovskite photovoltaic module, improving its efficiency. Adding a protective layer between the first electrode layer and the hole transport layer improves the wettability of the hole transport material, enabling selective coverage of the transparent conductive layer by the hole transport layer. This results in a thinner and more uniform hole transport layer, significantly reducing defects between the hole transport layer and the transparent conductive layer without compromising its functionality, thus improving the efficiency of the perovskite device. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the perovskite photovoltaic module structure in Example 1;

[0030] Figure 2 This is a schematic diagram of the composite light-absorbing layer of the perovskite photovoltaic module in Example 1;

[0031] Figure 3 This is a schematic diagram of the contact surface between the isolation layer and the transparent conductive layer in this invention;

[0032] Figure 4 This is a schematic diagram of the perovskite photovoltaic module structure in Example 2.

[0033] Explanation of reference numerals in the attached figures: 1. Substrate; 2. First electrode layer; 3. Isolation layer; 4. Composite light-absorbing layer; 41. First charge transport layer; 42. Mixed layer; 43. Perovskite thin film layer; 5. Second charge transport layer; 6. Second electrode layer. Detailed Implementation

[0034] To facilitate understanding of this utility model, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of this utility model are shown in the drawings. However, this utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this utility model.

[0035] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0037] Example 1

[0038] A perovskite photovoltaic module, with the following structure: Figure 1 As shown, it includes a substrate (1), a first electrode layer (2), an isolation layer (3), a composite light-absorbing layer (4), a second charge transport layer (5), and a second electrode layer (6) stacked sequentially from bottom to top.

[0039] The substrate (1) is a glass plate, the first electrode layer (2) is an ITO transparent conductive film, the isolation layer (3) is a 30nm thick aluminum oxide film, the composite light-absorbing layer (4) is about 500nm thick, and the second charge transport layer (5) is a 30nm thick C 60 The electron transport layer is composed of a thin film and a 20 nm SnO2 thin film, and the second electrode layer (6) is a 150 nm thick elemental silver thin film.

[0040] The composite light-absorbing layer (4) has the following properties: Figure 2The structure shown includes a first charge transport layer (41), a hybrid layer (42), and a perovskite thin film layer (43). The first charge transport layer (41) is disposed on the side facing the isolation layer (3), and the perovskite thin film layer (43) is disposed on the side facing the second charge transport layer (5). The first charge transport layer (41) is a hole transport layer of [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz). The band gap of the perovskite thin film layer (43) is 1.53 eV. The hybrid layer (42) is a thin film of MeO-4PACz mixed with perovskite. The hole transport layer has a thickness of approximately 50 nm, the perovskite thin film layer (43) has a thickness of approximately 400 nm, and the hybrid layer (42) has a thickness of approximately 50 nm.

[0041] Example 2

[0042] A perovskite photovoltaic module, with the following structure: Figure 4 As shown, the structure includes, from bottom to top, a substrate (1), a first electrode layer (2), an isolation layer (3), a first charge transport layer (41), a perovskite thin film layer (43), a second charge transport layer (5), and a second electrode layer (6).

[0043] Among them, the substrate (1) is a glass plate, the first electrode layer (2) is an ITO transparent conductive film, the isolation layer (3) is a 30nm thick aluminum oxide film, the first charge transport layer (41) is a hole transport layer of approximately 50nm thick [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), the perovskite film layer (43) has a band gap of 1.53eV, the thickness of the perovskite film layer (43) is 500nm, and the second charge transport layer (5) is a 30nm thick C 60 The electron transport layer is composed of a thin film and a 20 nm SnO2 thin film, and the second electrode layer (6) is a 150 nm thick elemental silver thin film.

[0044] Comparative Example

[0045] A perovskite photovoltaic module includes a substrate (1), a first electrode layer (2), a first charge transport layer (41), a perovskite thin film layer (43), a second charge transport layer (5), and a second electrode layer (6) stacked sequentially from bottom to top.

[0046] Among them, the substrate (1) is a glass plate, the first electrode layer (2) is an ITO transparent conductive film, the first charge transport layer (41) is a 20~50nm thick hole transport layer of [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), the perovskite film layer (43) has a band gap of 1.53eV and a thickness of 500nm, and the second charge transport layer (5) is a 30nm thick C60 The electron transport layer is composed of a thin film and a 20 nm SnO2 thin film, and the second electrode layer (6) is a 150 nm thick elemental silver thin film.

[0047] Experimental Example

[0048] The perovskite photovoltaic modules (0.113 cm⁻¹) of Examples 1-2 and the comparative example were tested using a solar simulator. 2 The test results are shown in Table 1.

[0049]

[0050] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0051] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A perovskite photovoltaic module, characterized in that, The material comprises, from bottom to top, a substrate (1), a first electrode layer (2), an isolation layer (3), a composite light-absorbing layer (4), a second charge transport layer (5), and a second electrode layer (6); the isolation layer (3) is a 30 nm thick aluminum oxide film; the composite light-absorbing layer (4) includes a first charge transport layer (41), a mixed layer (42), and a perovskite film layer (43), with the first charge transport layer (41) facing the isolation layer (3) and the perovskite film layer (43) facing the second charge transport layer (5).

2. The perovskite photovoltaic module according to claim 1, characterized in that, The substrate (1) is a glass plate; the first electrode layer (2) is an ITO transparent conductive film; the second charge transport layer (5) is a 30nm thick C... 60 An electron transport layer composed of a thin film and a 20 nm SnO2 thin film; the second electrode layer (6) is a 150 nm thick elemental silver thin film.

3. The perovskite photovoltaic module according to claim 1, characterized in that, The first charge transport layer (41) is a hole transport layer of [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid; the perovskite thin film layer (43) has a band gap of 1.53 eV.

4. The perovskite photovoltaic module according to claim 3, characterized in that, The first charge transport layer (41) has a thickness of 50 nm; the perovskite thin film layer (43) has a thickness of 400 nm; and the mixed layer (42) has a thickness of 50 nm.

5. A power generation device, characterized in that, The power generation device includes the perovskite photovoltaic module as described in any one of claims 1 to 4.