Silicon-based OLED strong microcavity structure

Abstract

The utility model discloses a silicon-based OLED strong microcavity structure comprising a silicon-based backboard, the silicon-based backboard is provided with a reflection anode layer, the reflection anode layer is a group of anode units arranged at intervals, the anode units are internally provided with cavities, and the cavities are internally provided with high-transmittance fillers. The silicon-based OLED strong micro-cavity is reasonable in structural design, is filled with a high-transmittance substance, and maintains low light absorption characteristics while realizing amplification of each R / G / B sub-pixel micro-cavity, so that the light-emitting capability of a device is effectively improved.

Description

Technical Field

[0001] This utility model relates to the field of display device technology, and in particular to a silicon-based OLED strong microcavity structure. Background Technology

[0002] Traditional displays are large, heavy, and inconvenient to carry, leading to the development of microdisplays, primarily Micro OLEDs. Micro OLED displays are lightweight and small, making them widely used in helmet-mounted and head-mounted displays. Their size is typically less than 1 inch, but their resolution can reach 1920RGB×1200 and above, showing great promise.

[0003] To improve the luminous efficiency of Micro OLEDs, a strong microcavity structure is often used. Traditionally, this is achieved by changing the thickness of the ITO film. However, when the ITO film is too thick, it has a strong light absorption capacity, which seriously affects the light emission performance of the device. For example, patent CN115295739A discloses a method for fabricating a full-color silicon-based OLED strong microcavity anode, which includes the following steps: fabricating a metal reflective anode on a CMOS substrate, fabricating a transparent anode layer with a thickness of Hr on the metal reflective anode; spin-coating photoresist on the transparent anode layer, exposing and developing it through a mask I, retaining the photoresist within the sub-pixel window, etching the metal reflective anode to the CMOS substrate; removing the residual photoresist and then spin-coating photoresist again, exposing and developing it through a mask II, removing the photoresist on the B sub-pixel unit, removing part of the photoresist on the G sub-pixel unit, and not removing the photoresist on the R sub-pixel unit; etching the photoresist and the transparent anode to form a B sub-pixel unit with a transparent anode layer thickness of Hb, a G sub-pixel unit with a transparent anode layer thickness of Hg, and an R sub-pixel unit with a transparent anode layer thickness of Hr. Utility Model Content

[0004] To address the shortcomings of existing technologies, this invention provides a silicon-based OLED strong microcavity structure to effectively increase the light-emitting capability of the device.

[0005] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is as follows:

[0006] The silicon-based OLED strong microcavity structure includes a silicon-based backplane, on which a reflective anode layer is provided. The reflective anode layer is a group of anode units arranged at intervals. Each anode unit has a cavity, and the cavity is filled with a high-transmittance filler.

[0007] Further or preferred:

[0008] The reflective anode layer comprises a titanium film, a titanium nitride film, an aluminum film, and an ITO film deposited sequentially.

[0009] The cavity is located within the aluminum film layer.

[0010] The filler is silicon oxide, or a composite filler of silicon oxide and silicon nitride.

[0011] The filler thickness of the corresponding B sub-pixel, R sub-pixel, and G sub-pixel in the group of anode units decreases sequentially.

[0012] Titanium nitride is deposited on the edges of the cavity.

[0013] The filler thickness range for the corresponding B sub-pixel is 150-160nm, the filler thickness range for the corresponding R sub-pixel is 110-120nm, and the filler thickness range for the corresponding G sub-pixel is 50-60nm.

[0014] Compared with the prior art, this utility model has the following advantages:

[0015] This silicon-based OLED features a well-designed microcavity structure filled with a high-transmittance material. While increasing the microcavity size of each R / G / B sub-pixel, it maintains low light absorption characteristics, thereby effectively increasing the device's light-emitting capability. Attached Figure Description

[0016] The following is a brief explanation of the contents of each of the accompanying drawings and the markings in the drawings:

[0017] Figure 1 This is a schematic diagram of the deposition of Ti / TiN / Al thin films according to this invention.

[0018] Figure 2 This is a schematic diagram of the etched trenches on the Al thin film of this invention.

[0019] Figure 3 This is a schematic diagram of the deposition of TiN and SiO2 thin films according to this invention.

[0020] Figure 4 This is a schematic diagram of the SiO2 film grinding process of this utility model.

[0021] Figure 5 This is a schematic diagram of the deposition of ITO and the anodic etching of this utility model. Detailed Implementation

[0022] The specific embodiments of this utility model will be further described in detail below with reference to the accompanying drawings and through the description of the examples.

[0023] like Figures 1 to 5As shown, the silicon-based OLED strong microcavity structure includes a silicon-based backplane and a reflective anode layer, with the reflective anode layer deposited on the silicon-based backplane. The reflective anode layer consists of a group of anode units arranged at intervals, with cavities provided in the anode units corresponding to R / G / B sub-pixels, and high-transmittance fillers provided in the cavities.

[0024] This invention features a rationally designed silicon-based OLED microcavity structure, filled with a high-transmittance material. While achieving amplification of each R / G / B sub-pixel microcavity, it maintains low light absorption characteristics, thereby effectively increasing the device's light-emitting capability.

[0025] The reflective anode layer comprises a titanium film, a titanium nitride film, an aluminum film, and an ITO film deposited sequentially; the cavity is located in the aluminum film; titanium nitride is deposited on the edge of the cavity.

[0026] The filler is silicon oxide, or a composite filler of silicon oxide and silicon nitride. Preferably, silicon oxide is used. This scheme uses a combination of multiple photolithography and dry etching to obtain microcavities of different depths in the reflective layer Al. Then, high-transmittance SiO2 is deposited in the microcavities through CVD and CMP technology, thereby achieving microcavity amplification for each R / G / B sub-pixel and improving the light emission intensity.

[0027] Furthermore, by changing the thickness of SiO2 to achieve a strong microcavity effect, the risk of affecting luminescence caused by traditional methods can be effectively avoided.

[0028] In a set of anode units, the filler thickness of the corresponding B sub-pixels, R sub-pixels, and G sub-pixels decreases sequentially. Specifically, the filler thickness ranges are as follows: 150-160nm for the B sub-pixel, 110-120nm for the R sub-pixel, and 50-60nm for the G sub-pixel.

[0029] The specific implementation steps are as follows:

[0030] Titanium / titanium nitride / aluminum thin films are deposited on a silicon-based backplane using PVD technology, such as... Figure 1 As shown;

[0031] Trenches of varying depths are etched onto aluminum thin films using multiple photolithography and dry etching techniques, such as... Figure 2 As shown;

[0032] Titanium nitride and silicon oxide thin films were deposited using PVD and CVD technologies, respectively, such as Figure 3 As shown;

[0033] Excess silicon oxide is chemically polished using CMP to achieve surface planarization. The CMP is applied to the titanium nitride, such as... Figure 4 As shown;

[0034] ITO was deposited via PVD, and the anode was then etched open using dry etching to obtain a strong microcavity structure, such as... Figure 5 As shown.

[0035] The above description is only a preferred embodiment of the present utility model. The above technical features can be arbitrarily combined to form multiple embodiments of the present utility model.

[0036] The present invention has been described above with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the concept and technical solution of the present invention, or the direct application of the concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A silicon-based OLED strong microcavity structure, comprising a silicon-based backplane, wherein a reflective anode layer is disposed on the silicon-based backplane, the reflective anode layer being a group of anode units arranged at intervals, characterized in that: The anode unit has a cavity, and the cavity is filled with a high-transmittance filler.

2. The silicon-based OLED strong microcavity structure as described in claim 1, characterized in that: The reflective anode layer comprises a titanium film, a titanium nitride film, an aluminum film, and an ITO film deposited sequentially.

3. The silicon-based OLED strong microcavity structure as described in claim 1, characterized in that: The cavity is located within the aluminum film layer.

4. The silicon-based OLED strong microcavity structure as described in claim 1, characterized in that: The filler is silicon oxide, or a composite filler of silicon oxide and silicon nitride.

5. The silicon-based OLED strong microcavity structure as described in claim 1, characterized in that: The filler thickness of the corresponding B sub-pixel, R sub-pixel, and G sub-pixel in the group of anode units decreases sequentially.

6. The silicon-based OLED strong microcavity structure as described in claim 3, characterized in that: Titanium nitride is deposited on the edges of the cavity.

7. The silicon-based OLED strong microcavity structure as described in claim 5, characterized in that: The filler thickness range for the corresponding B sub-pixel is 150-160nm, the filler thickness range for the corresponding R sub-pixel is 110-120nm, and the filler thickness range for the corresponding G sub-pixel is 50-60nm.

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