Semiconductor epitaxial process equipment

Abstract

The utility model discloses semiconductor epitaxial process equipment, which overcomes the defects that a cylindrical cavity in the related technology is easy to generate turbulent flow and the distribution of an airflow field is non-uniform by improving the structure of a main cavity, so that the thickness uniformity of an epitaxial film layer is improved. Besides, through the arrangement of the auxiliary cavity structure, the stress damage to the sealing member caused by large internal and external difference change of cavity equipment in the preparation process is effectively reduced, so that the reliability of semiconductor epitaxial process equipment is improved, the service life of the semiconductor epitaxial process equipment is prolonged, and the technical problems existing in related technologies are solved.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and more particularly to a semiconductor epitaxial process apparatus, especially applicable to epitaxial processes. Background Technology

[0002] In related technologies, epitaxial process cavities typically employ methods such as... Figure 1 and Figure 2 The structure shown is a cylindrical cavity 10 and two quartz components (11, 12) that isolate the process cavity from the external environment. The upper quartz component 11 has a dome shape, which is designed to prevent the quartz material from cracking due to excessive pressure difference between the inside and outside of the process cavity. This is achieved by dispersing atmospheric pressure to the edge of the quartz component to enhance structural strength.

[0003] However, this structural design presents the following technical problems: Because the structure uses a cylindrical cavity 10, when gas is injected into the cylindrical cavity 10, the airflow collides with the curved inner wall of the cylindrical cavity 10, easily causing turbulence. This turbulence not only leads to an uneven airflow field distribution, but this uneven airflow field also directly affects the thickness uniformity of the epitaxial film, further affecting the doping concentration of group III-V elements in the epitaxial film, resulting in uneven resistivity at various measurement points in conventional epitaxial processes. Simultaneously, this uneven airflow field also affects the doping concentration of carbon and germanium elements in the epitaxial film, causing uneven stress distribution in advanced logic epitaxial processes. Furthermore, the dome shape (i.e., curved surface shape) used in the upper quartz component 11 is not only difficult to process, but this curved structure itself interferes with the airflow field, further exacerbating the unevenness of the airflow distribution. Therefore, the existence of the above problems severely restricts the quality control capability of the epitaxial process, making it difficult to meet increasingly stringent process requirements and product quality standards.

[0004] Therefore, it is necessary to propose solutions to the problems in related technologies. Utility Model Content

[0005] The purpose of this application is to provide a semiconductor epitaxial process apparatus to solve the technical problems existing in related technologies. This application overcomes the defects of cylindrical cavities in related technologies, such as turbulence and uneven gas flow distribution, by improving the main cavity structure, thereby improving the thickness uniformity of the epitaxial film. Furthermore, by setting up auxiliary cavity structures, the stress damage caused to the sealing components by large variations in the internal and external properties of the cavity equipment during the fabrication process is effectively reduced, thereby improving the reliability and service life of the semiconductor epitaxial process apparatus.

[0006] To achieve the above objectives, this application provides a semiconductor epitaxial process apparatus, comprising: a main cavity, wherein a wafer pedestal is disposed within the main cavity for supporting a wafer; wherein the main cavity has a cuboid structure; the main cavity has a first sidewall and a second sidewall arranged horizontally opposite to each other, an air inlet is disposed on the first sidewall, and an exhaust outlet is disposed on the second sidewall; process gas is introduced into the main cavity through the air inlet in a first direction parallel to the support surface of the wafer pedestal; the process gas forms a horizontal laminar flow channel within the main cavity; the extension direction of the horizontal laminar flow channel is perpendicular to the first sidewall and the second sidewall, and extends through the air inlet and the exhaust outlet; along a second direction of the main cavity, the size of the exhaust outlet is greater than or equal to the size of the air inlet; wherein the second direction is perpendicular to the first direction.

[0007] In some embodiments of this application, the device includes: a first auxiliary cavity disposed above the main cavity; and a second auxiliary cavity disposed below the main cavity; wherein the pressure difference between the first auxiliary cavity and the second auxiliary cavity and the pressure of the main cavity is constant at 100-200 Torr.

[0008] In some embodiments of this application, the main cavity is a cuboid structure with openings at the top and bottom. The first auxiliary cavity and the second auxiliary cavity are each provided with a first quartz element on the opening side facing the main cavity. The first quartz element is used to isolate the main cavity from the first auxiliary cavity and the second auxiliary cavity. The first auxiliary cavity and the second auxiliary cavity are each provided with a second quartz element opposite to the first quartz element on the opening side facing away from the main cavity.

[0009] In some embodiments of this application, the first quartz component includes a first main body portion, which is horizontally disposed, and the periphery of the first main body portion is fixed to a fastening member by a first flange.

[0010] In some embodiments of this application, the main cavity opening sidewall is provided with a protrusion; the first quartz component further includes a first support portion, the first support portion is located at the periphery of the first main body portion, the first support portion and the protrusion of the main cavity opening sidewall are in contact with the contact surface of the first auxiliary cavity / second auxiliary cavity, and are fixed to the fastening member by the first flange.

[0011] In some embodiments of this application, the opposing surfaces of the first support portion are provided with a first sealing element. The side of the first support portion facing away from the main cavity is sealed to the first flange through the first sealing element. The side of the first support portion facing the main cavity is sealed to the side of the protrusion of the opening sidewall of the main cavity facing the first support portion through the first sealing element. The first flange is sealed to the top surface of the opening of the main cavity.

[0012] In some embodiments of this application, the second quartz component includes a second main body, the side of the second main body facing the first auxiliary cavity / second auxiliary cavity being flat and horizontal; the periphery of the second main body facing the main cavity is fixed to the fastening member by the first flange, and the periphery of the second main body facing away from the main cavity is fixed to the fastening member by the second flange.

[0013] In some embodiments of this application, a third sealing element is further provided on the first flange; and fasteners are further provided on the fastening member.

[0014] In some embodiments of this application, both the first auxiliary cavity and the second auxiliary cavity are provided with a plurality of heating elements; the orthographic projections of the plurality of heating elements on the wafer substrate are arranged radially along the circumferential direction of the wafer substrate, and the angular spacing between the orthographic projections of adjacent heating elements is equal.

[0015] This application provides a semiconductor epitaxial process apparatus. This apparatus (hereinafter referred to as the apparatus) improves the structure of the main cavity to overcome the defects of cylindrical cavities in related technologies, which are prone to turbulence and uneven gas flow distribution. This improves the thickness uniformity of the epitaxial film. Furthermore, by rationally setting the dimensions of the inlet and outlet, the flow rate and direction of the gas can be effectively controlled, thereby promoting the formation and maintenance of horizontal laminar flow channels within the main cavity and avoiding turbulence. Moreover, this application effectively reduces stress damage to the sealing components caused by large variations in the internal and external properties of the cavity during the fabrication process by setting special auxiliary cavity structures (i.e., the first auxiliary cavity and the second auxiliary cavity in this document), thereby improving the reliability and service life of the semiconductor epitaxial process apparatus. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1This is a schematic diagram of the structure of an epitaxial process cavity in related technologies.

[0018] Figure 2 This is a schematic diagram of airflow within the epitaxial process cavity in related technologies.

[0019] Figure 3 This is a cross-sectional schematic diagram of a semiconductor epitaxial process apparatus according to an embodiment of this application.

[0020] Figures 4A to 4D This is a schematic diagram of the first upper quartz component, the first lower quartz component, the second upper quartz component, and the second lower quartz component in the embodiments of this application.

[0021] Figure 5 This is a schematic diagram of the main cavity structure in one embodiment of this application. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the specific technical solutions of this application will be further described in detail below with reference to the accompanying drawings of the embodiments of this application. The following embodiments are used to illustrate this application, but are not intended to limit the scope of this application. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing the embodiments of this application only and is not intended to limit this application.

[0023] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. "Multiple" refers to at least two. The directional terms mentioned in the embodiments of this application, such as "upper," "lower," "inner," "outer," "top," "bottom," and "side," are only for reference to the directions in the accompanying drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of this application, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. The limitations on relative positional relationships mentioned in the embodiments of this application, such as parallel, perpendicular, and aligned, are all relative to the current technological level and are not absolutely strict limitations. Slight deviations are allowed; approximations of parallel, perpendicular, and aligned are all acceptable. In the embodiments of this application, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," "third," and "fourth" may explicitly or implicitly include one or more of that feature.

[0024] This application provides a semiconductor epitaxial process apparatus, which includes a main cavity with a wafer base disposed therein for supporting a wafer.

[0025] The main cavity has a cuboid structure. It has a first sidewall and a second sidewall arranged horizontally opposite each other. An air inlet is located on the first sidewall, and an exhaust outlet is located on the second sidewall. Process gas is introduced through the air inlet in a first direction parallel to the support surface of the wafer pedestal, oriented towards the main cavity. The process gas forms a horizontal laminar flow channel within the main cavity, extending perpendicularly to the first and second sidewalls and penetrating both the air inlet and the exhaust outlet. Along a second direction of the main cavity, the size of the exhaust outlet is greater than or equal to the size of the air inlet; this second direction is perpendicular to the first direction. This design overcomes the defects of cylindrical cavities in related technologies, which are prone to turbulence and uneven airflow distribution, thereby improving the thickness uniformity of the epitaxial film.

[0026] More specifically, the semiconductor epitaxial process equipment in the embodiments of this application can perform vapor deposition, thermal processing, or epitaxial processes. The following description will use the example of the equipment performing an epitaxial process, but is not limited thereto. Epitaxy is a process for growing homogeneous or heterogeneous crystalline thin films on the surface of a crystalline substrate. In this process, reactive gases undergo a chemical reaction and deposition on the substrate surface under specific temperature and pressure conditions, thereby forming a thin film layer with a specific crystal structure, which is called an epitaxial film layer. The thickness of the epitaxial film layer refers to the vertical distance from the substrate surface to the surface of the epitaxial growth layer. Therefore, controlling the thickness of epitaxial films is of significant technical importance. This is not only reflected in the fact that the thickness of epitaxial films directly affects the electrical characteristics of semiconductor devices, such as determining the breakdown voltage in power devices and influencing the luminous efficiency in light-emitting diodes, but also in cost control. The raw materials used in epitaxial growth (such as silane and trimethylgallium) are expensive, and precise control of film thickness can optimize raw material utilization efficiency, thereby reducing production costs. Simultaneously, the uniformity of epitaxial film thickness directly affects product yield. In semiconductor manufacturing, it is generally required that the coefficient of variation (CV) of epitaxial film thickness on the same batch and the same substrate be controlled within ±3%. The semiconductor epitaxial process equipment of the embodiments of this application can meet the above requirements.

[0027] See Figures 1 to 5 The semiconductor epitaxial process equipment described in this application will be described in detail.

[0028] In one embodiment of this application, the semiconductor epitaxial process equipment includes a main cavity 110. A wafer base 171 is disposed inside the main cavity 110. The wafer base 171 is used to support a wafer 172. The bearing 173 of the wafer base 171 is mounted on a first quartz piece 150 of a second auxiliary cavity 140.

[0029] The main cavity 110 has a cuboid structure. The main cavity 110 has a first sidewall 111 and a second sidewall 112 arranged horizontally opposite each other. An air inlet 121 is provided on the first sidewall 111, and an exhaust outlet 122 is provided on the second sidewall 112. The air inlet 121 is used to introduce process gases (e.g., hydrogen chloride (HCl), hydrogen (H2), diborane (B2H6), phosphine (PH3), dichlorosilane (SiH2Cl2), silane (SiH4), etc., but not limited to these) into the cavity of the main cavity 110, forming the required gas environment above the semiconductor material (e.g., the wafer / silicon wafer to be processed, glass substrate, etc.) to perform vapor deposition and form the required thin film structure on the surface of the semiconductor material. Further, the air inlet 121 may include a plurality of small holes (not shown in the figure) evenly spaced along a second direction of the main cavity 110, thereby allowing the process gas to be uniformly introduced from one side of the main cavity 110 (i.e., the side of the air inlet 121). The exhaust port 122 of the main cavity 110 is mainly used for vacuuming or discharging process gases.

[0030] The air inlet 121 and the exhaust outlet 122 are located at the midpoint of the first sidewall 111 and the midpoint of the second sidewall 112, respectively. The air inlet 121 is configured to introduce process gas in a first direction toward the main cavity 110, where the first direction is parallel to the support surface of the wafer base 171. When the air inlet 121 is configured to introduce process gas in the first direction toward the main cavity 110, since the flow direction of the process gas is parallel to the support surface of the wafer base 171, the process gas can flow more uniformly across the surface of the wafer 172, thereby effectively forming a stable flow field distribution.

[0031] The process gas forms a horizontal laminar flow channel within the main cavity 110. This horizontal laminar flow channel extends perpendicularly to the first sidewall 111 and the second sidewall 112, and connects to the inlet 121 and the outlet 122. The perpendicularity of the horizontal laminar flow channel to the first sidewall 111 and the second sidewall 112 effectively ensures a clear flow direction for the process gas, thereby effectively guiding its flow path. In other words, this vertical configuration allows the process gas to maintain directional flow and reduces the generation of lateral flow, thus lowering the likelihood of turbulence formation.

[0032] In some embodiments, along the second direction of the main cavity 110, the size of the air inlet 121 is two-thirds of the size of the main cavity 110. The size of the air inlet 121 is larger than the size of the wafer base 171. The size of the exhaust port 122 is greater than or equal to the size of the air inlet 121. For example, along the second direction of the main cavity 110, the size (i.e., width) of the main cavity 110 is 600 mm, the size of the air inlet 121 is 400 mm, and the size of the wafer base 171 is 350 mm. In this case, the size of the exhaust port 122 is set to 400 mm to 500 mm, preferably 450 mm. By setting a larger exhaust port 122, it can be ensured that the process gas is discharged from the main cavity 110 in a timely manner, effectively avoiding the generation of turbulence and improving the uniformity of the airflow field. The air inlet 121 is configured to introduce process gas towards the first direction of the main cavity 110, which helps the gas to enter the main cavity 110 smoothly. The horizontal laminar flow channel is perpendicular to the first sidewall 111 and the second sidewall 112. Combined with the reasonable size design of the air inlet 121 and the exhaust port 122, it can effectively control the gas flow rate and direction, and promote the formation and maintenance of the horizontal laminar flow channel.

[0033] It should be noted that the horizontal laminar flow channel refers to the process region formed by directional gas flow, which can be understood as an idealized gas flow path. Furthermore, the first direction of the main cavity 110 is defined as its length direction, the second direction as its width direction, and the third direction as its height direction, wherein the first, second, and third directions are perpendicular to each other. The first direction is parallel to the support surface of the wafer base 171.

[0034] The main cavity 110 also includes a plate transfer port 123, the projection of the plate transfer port 123 on the horizontal plane is set at a 90° angle with the air inlet 121. Along the third direction of the main cavity 110, the plate transfer port 123 and the air inlet 121 are set at the same height.

[0035] Furthermore, in some embodiments, a valve (not shown) is provided on the outside of the transfer port 123 for controlling the communication or closure of the interior and exterior of the main cavity 110. When open, the valve allows the wafer 172 to be transferred in and out of the main cavity 110, while when closed, it disconnects the main cavity 110 from other chambers (e.g., transfer chambers). This controllable sealing mechanism not only ensures the smooth progress of the wafer 172 loading process but also effectively protects the process environment and processes from external interference.

[0036] In this embodiment, the semiconductor epitaxial process equipment further includes a first auxiliary cavity 130 and a second auxiliary cavity 140. The first auxiliary cavity 130 is disposed above the main cavity 110, and the second auxiliary cavity 140 is disposed below the main cavity 110. The structures of the first auxiliary cavity 130 and the second auxiliary cavity 140 can be identical. Further, the pressure in the main cavity 110 is configured to be 0–800 Torr. The pressures in the first auxiliary cavity 130 and the second auxiliary cavity 140 are configured to be 50–800 Torr, and the pressure difference between the first auxiliary cavity 130 and the second auxiliary cavity 140 and the main cavity 110 is constant at 100–200 Torr. This configuration allows for a reasonable gas pressure transition, reducing stress damage to the sealing components caused by large variations in the internal and external pressures of the cavity equipment during the fabrication process, thereby improving the reliability and service life of the semiconductor epitaxial process equipment.

[0037] like Figure 5 As shown, the main cavity 110 is a cuboid structure with openings at the top and bottom. (Return to reference) Figure 3 and Figures 4A to 4D Each of the first auxiliary cavity 130 and the second auxiliary cavity 140 has a first quartz element 150 on its opening side facing the main cavity 110. The first quartz element 150 is used to isolate the main cavity 110 from the first auxiliary cavity 130 and the second auxiliary cavity 140. Each of the first auxiliary cavity 130 and the second auxiliary cavity 140 has a second quartz element 160 on its opening side facing away from the main cavity 110, opposite to the first quartz element.

[0038] The first quartz component 150 includes a first main body (not shown in the figure), which is horizontally positioned. The periphery of the first main body is fixed to the fastening member 190 via a first flange 181. In some optional embodiments, the periphery of the first main body is tightly fitted to the periphery of the inner wall of the opening of the main cavity 110 and fixed to the fastening member 190 via the first flange 181. It should be noted that the fastening member 190 is a structure for fixing the main cavity 110, the first auxiliary cavity 130, and the second auxiliary cavity 140 together. The height of the fastening member 190 along a third direction matches the overall height of the main cavity 110 and the first auxiliary cavities 130 and 140 on its upper and lower sides, so as to achieve effective fixing of the three cavities. The width of the first quartz component 150 and the second quartz component 160 along a second direction is the width of the main cavity 110. The length of the first quartz component 150 and the second quartz component 160 along a first direction is the length of the main cavity 110.

[0039] In some embodiments, the first quartz element 150 further includes a first support portion (such as...). Figure 3The first quartz component 150 includes a first main body and a first support. The first main body refers to the first upper main body 152 and the first lower main body 156, and the first support refers to the first upper support 153 and the first lower support 157. The first support is located at the periphery of the first main body. The first support is in contact with the protrusion 113 of the opening sidewall of the main cavity 110 facing the first auxiliary cavity 130 or the second auxiliary cavity 140, and is fixed to the fastening member 190 by the first flange 181. In some optional embodiments, the protrusion 113 of the first support is in contact with the first auxiliary cavity 130 or the second auxiliary cavity 140 and the opening sidewall of the main cavity 110 (not shown in the figure), and is fixed to the fastening member 190 by the first flange 181.

[0040] Furthermore, each of the opposing surfaces of the first support portion is provided with a first sealing element 220 (e.g., a sealing ring). The side of the first support portion facing away from the main cavity 110 is sealed to the first flange 181 through the first sealing element 220, wherein the first flange is provided with a groove (not shown in the figure) for accommodating the first sealing element 220. The side of the first support portion facing the main cavity 110 is sealed to the side of the protrusion 113 of the opening sidewall of the main cavity 110 facing the first support portion through the first sealing element 220. The side of the protrusion 113 of the opening sidewall of the main cavity 110 facing the first support portion may have a stepped portion 114, which is integral with the protrusion 113. The stepped portion 114 is provided with a groove (not shown in the figure) for accommodating the first sealing element 220. During assembly, the first seal 220 is placed within the groove. When the first support portion and the stepped portion 114 are tightly fitted together, the first seal 220 is appropriately compressed, thereby forming a seal between the main cavity 110 and the auxiliary cavity (first auxiliary cavity 130 or second auxiliary cavity 140), ensuring the reliable implementation of the epitaxial process. In some optional embodiments, the side of the protrusion 113 of the opening sidewall of the main cavity 110 facing the first support portion does not have the stepped portion 114. Instead, a groove is directly provided on the contact surface of the protrusion 113 facing the first support portion to accommodate the first seal 220. When the first support portion and the protrusion 113 are tightly fitted together, the first seal 220 is appropriately compressed, which can also form an effective seal between the main cavity 110 and the auxiliary cavity (first auxiliary cavity 130 or second auxiliary cavity 140), ensuring the reliable implementation of the epitaxial process.

[0041] Furthermore, in some alternative embodiments, the first quartz element 150 can be secured to the fastening member 190 via the first flange 181 using a sealing element of other structural form. In other alternative embodiments, the first quartz element 150 can be secured to the inner periphery of the opening of the main cavity 110 via a sealing element of other structural form (such as a metal seal or other elastic sealing material), and then secured to the fastening member 190 via the first flange 181, thereby achieving the same effect of isolating and sealing the main cavity 110 from the auxiliary cavity. Additionally, the first flange 181 is sealingly connected to the top surface of the opening of the main cavity 110.

[0042] Similar to the first quartz component 150 described above, the second quartz component 160 includes a second main body. The side of the second main body facing the first auxiliary cavity 130 or the second auxiliary cavity 140 is flat and horizontal, while the side of the second main body facing away from the first auxiliary cavity 130 or the second auxiliary cavity 140 may be provided with multiple reinforcing ribs. These reinforcing ribs have a rib-like protrusion structure and extend perpendicularly to the surface of the second main body. The reinforcing ribs are used to improve the bending stiffness of the second quartz component 160. Of course, in some optional embodiments, the side of the second main body facing away from the first auxiliary cavity 130 or the second auxiliary cavity 140 may also be set to be flat and horizontal. Similar to the fixing method of the first main body, the periphery of the second main body facing the main cavity 110 is fixed to the fastening member 190 through the first flange 181, and the periphery of the second main body facing away from the main cavity 110 is fixed to the fastening member 190 through the second flange 182.

[0043] In some embodiments, the second quartz element 160 further includes a second support portion (such as...). Figure 3 The second quartz component 160 includes a second main body and a second support. The second main body refers to the second upper main body 162 and the second lower main body 166, and the second support refers to the second upper support 163 and the second lower support 167. The second support is located at the periphery of the second main body. Further, each of the opposing surfaces of the second support is provided with a second sealing element 230 (e.g., a sealing ring). The side of the second support facing the main cavity 110 is sealed to the first flange 181 via the second sealing element 230, and the side of the second support facing away from the main cavity 110 is sealed to the second flange 182 via the second sealing element 230. The second flange 182 is provided with a groove (not shown in the figure) for accommodating the second sealing element 230.

[0044] Furthermore, to enhance the sealing reliability of the semiconductor epitaxial process equipment, a third sealing element is provided on the first flange 181 to improve the sealing effect. In addition, fasteners are provided on the fastening member 190 to achieve structural fixation and enhance the sealing performance of the mating surfaces.

[0045] As mentioned above, by setting the first quartz piece 150 and the second quartz piece 160, effective isolation and sealing can be achieved between the main cavity 110 and the auxiliary cavities (i.e., the first auxiliary cavity 130 and the second auxiliary cavity 140), ensuring the reliable execution of the epitaxial process.

[0046] The following will combine Figures 3 to 5 As shown, a specific embodiment of a semiconductor epitaxial process apparatus is described in detail. In conjunction with the foregoing description, in this specific embodiment, the first quartz component 150 includes a first upper quartz component 151 and a first lower quartz component 155, the first main body includes a first upper main body portion 152 and a first lower main body portion 156, and the first support portion includes a first upper support portion 153 and a first lower support portion 157. Similarly, the second quartz component 160 includes a second upper quartz component 161 and a second lower quartz component 165, the second main body includes a second upper main body portion 162 and a second lower main body portion 166, and the second support portion includes a second upper support portion 163 and a second lower support portion 167. The first upper quartz component 151, the first upper main body 152, the first upper support 153, the second upper quartz component 161, the second upper main body 162, and the second upper support 163 are all located on one side of the first auxiliary cavity 130, while the first lower quartz component 155, the first lower main body 156, the first lower support 157, the second lower quartz component 165, the second lower main body 166, and the second lower support 167 are all located on one side of the second auxiliary cavity 140.

[0047] Specifically, a first upper quartz piece 151 is disposed between the main cavity 110 and the first auxiliary cavity 130, and the first upper quartz piece 151 is used to isolate the main cavity 110 from the first auxiliary cavity 130. A first lower quartz piece 155 is disposed between the main cavity 110 and the second auxiliary cavity 140, and the first lower quartz piece 155 is used to isolate the main cavity 110 from the second auxiliary cavity 140. The first quartz piece 150 (i.e., the first upper quartz piece 151 and the first lower quartz piece 155) and the second quartz piece 160 (i.e., the second upper quartz piece 161 and the second lower quartz piece 165) are both made of high-purity quartz (silicon dioxide, SiO2) as raw material. Because this material has the characteristics of high temperature resistance (withstanding temperatures above 1000℃), good chemical stability (resistant to acids and alkalis), low coefficient of thermal expansion (good thermal shock resistance), high purity (avoiding contamination), and strong corrosion resistance, it can not only provide a clean reaction environment and avoid contamination by impurities during use, but also maintain good structural stability in high-temperature processes, thereby ensuring the reliability and repeatability of the chemical reaction process and achieving the goal of protecting product quality during the process.

[0048] like Figure 3 As shown, the first upper quartz component 151 includes a first upper main body portion 152 and a first upper support portion 153 connected to the first upper main body portion 152, as... Figure 4AAs shown. The first lower quartz component 155 includes a first lower main body portion 156 and a first lower support portion 157 connected to the first lower main body portion 156, as shown. Figure 4B As shown, the first upper main body portion 152 located on one side of the first auxiliary cavity 130 and the first lower main body portion 156 located on one side of the second auxiliary cavity 140 are both designed to be flat and horizontal. In related technologies, dome-shaped quartz components suffer from uneven airflow distribution due to their curved surface structure, thus affecting the uniformity of epitaxial film deposition. The horizontal design adopted in this application helps to make the airflow distribution more uniform. Furthermore, dome-shaped quartz components in related technologies suffer from high processing difficulty, require special processes, and have difficulty guaranteeing processing accuracy, thus affecting product quality. However, the horizontal design adopted in this application helps to make the airflow distribution more uniform. Figure 3 In the embodiment shown, the first upper main body 152 and the first lower main body 156 adopt a flat and horizontal design, which makes the manufacturing process simpler and more reliable, and helps to improve the product yield.

[0049] Continue reading Figure 3 As shown, a first upper support portion 153 is provided around the periphery of the first upper main body portion 152 of the first upper quartz piece 151. The first upper support portion 153 is in contact with the protrusion 113 of the opening sidewall of the main cavity 110 facing the first auxiliary cavity 130, and is fixed to the fastening member 190 by the first flange 181. Furthermore, each of the opposing surfaces of the first upper support portion 153 is provided with a first sealing element 220 (e.g., a sealing ring). The side of the first upper support portion 153 facing away from the main cavity 110 is sealed to the first flange 181 through the first sealing element 220. The side of the first upper support portion 153 facing the main cavity 110 is sealed to the side of the protrusion 113 of the opening sidewall of the main cavity 110 facing the first upper support portion 153 through the first sealing element 220. The protrusion 113 of the opening sidewall of the main cavity 110 facing the first upper support portion 153 has a stepped portion 114, which is integral with the protrusion 113. The stepped portion 114 is provided with a groove (not shown in the figure) for accommodating the first sealing element 220. In addition, the first flange 181 (located on one side of the first auxiliary cavity 130) is sealed to the top surface of the opening of the main cavity 110.

[0050] Similarly, a first lower support portion 157 is provided around the first lower main body portion 156 of the first lower quartz piece 155. The first lower support portion 157 is in contact with the protrusion 113 of the opening sidewall of the main cavity 110 facing the second auxiliary cavity 140, and is fixed to the fastening member 190 by the first flange 181. Furthermore, each of the opposing surfaces of the first lower support portion 157 is provided with a first sealing element 220 (e.g., a sealing ring). The side of the first lower support portion 157 facing away from the main cavity 110 is sealed to the first flange 181 through the first sealing element 220. The side of the first lower support portion 157 facing the main cavity 110 is sealed to the side of the protrusion 113 of the opening sidewall of the main cavity 110 facing the first lower support portion 157 through the first sealing element 220. The protrusion 113 of the opening sidewall of the main cavity 110 facing the first lower support portion 157 has a stepped portion 114, which is integral with the protrusion 113. The stepped portion 114 is provided with a groove (not shown in the figure) for accommodating the first sealing element 220. In addition, the first flange 181 (located on one side of the second auxiliary cavity 140) is sealed to the top surface of the opening of the main cavity 110.

[0051] Continue reading Figure 3 As shown, a second upper quartz component 161 is provided on the opening side of the first auxiliary cavity 130 facing away from the main cavity 110, and is disposed opposite to the first upper quartz component 151 in a third direction. The second upper quartz component 161 includes a second upper main body portion 162 and a second upper support portion 163 connected to the second upper main body portion 162, as shown. Figure 4C As shown. The second upper main body 162 has a plurality of first reinforcing ribs 164 on the side facing away from the main cavity 110. The first reinforcing ribs 164 have a rib-like protrusion structure and extend perpendicularly to the surface of the second upper main body 162. The first reinforcing ribs 164 are used to improve the bending stiffness of the second upper quartz component 160.

[0052] A second upper support portion 163 is provided around the periphery of the second upper main body portion 162. A second sealing element 230 (e.g., a sealing ring) is provided on each of the opposing surfaces of the second upper support portion 163. The side of the second upper support portion 163 facing the main cavity 110 is sealed to the first flange 181 through the second sealing element 230, and the side of the second upper support portion 163 facing away from the main cavity 110 is sealed to the second flange 182 through the second sealing element 230.

[0053] Similarly, a second lower quartz component 165 is provided on the opening side of the second auxiliary cavity 140 facing away from the main cavity 110, and is disposed opposite to the first lower quartz component 155 in a third direction. The second lower quartz component 165 includes a second lower main body portion 166 and a second lower support portion 167 connected to the second lower main body portion 166, such as... Figure 4DAs shown. A plurality of second reinforcing ribs 168 are provided on the side of the second lower main body 166 facing away from the main cavity 110. The second reinforcing ribs 168 have a rib-like protrusion structure and extend perpendicularly to the surface of the second lower main body 166. The second reinforcing ribs 168 are used to improve the bending stiffness of the second lower quartz component 165.

[0054] A second lower support portion 167 is provided around the periphery of the second lower main body portion 166, and a second sealing element 230 (e.g., a sealing ring) is provided on the opposite surfaces of the second lower support portion 167. The side of the second lower support portion 167 facing the main cavity 110 is sealed to the first flange 181 through the second sealing element 230, and the side of the second lower support portion 167 facing away from the main cavity 110 is sealed to the second flange 182 through the second sealing element 230.

[0055] Furthermore, such as Figure 3 As shown, a third sealing element 240 (e.g., a fastening screw) is also provided on the first flange 181, which can make the first flange 181 (located on one side of the first auxiliary cavity 130) tightly connected with the top surface of the main cavity 110 and the first upper support 153, and at the same time, the first flange 181 (located on one side of the second auxiliary cavity 140) tightly connected with the bottom surface of the main cavity 110 and the first lower support 157. This fastening design effectively ensures the sealing of the main cavity 110 structure, thereby ensuring the reliability of the epitaxial process and thus achieving the purpose of protecting product quality.

[0056] Continue reading Figure 3 As shown, the semiconductor epitaxial process equipment of this application also includes the aforementioned fastening member 190. The fastening member 190 includes a first fastening member 191 and a second fastening member 192. The first fastening member 191 and the second fastening member 192 are located on both sides of the main cavity 110. The top and bottom of the first fastening member 191 are respectively clamped to the second flange 182 by fasteners 250 (i.e., fastening screws). Specifically, the second flange 182 located on one side of the first auxiliary cavity 130 cooperates with the corresponding second sealing member 230, so that the second flange 182, the second upper support portion 163, and the first flange 181 on the corresponding side are tightly connected to each other. The second flange 182 located on one side of the second auxiliary cavity 140 cooperates with the corresponding second sealing member 230, so that the second flange 182, the second lower support portion 167, and the first flange 181 on the corresponding side are tightly connected to each other, thereby ensuring the sealing and stability of the overall structure.

[0057] As described above, the first upper quartz component 151, the first lower quartz component 155, and the main cavity 110 together constitute the main body of the reaction chamber of the equipment. This main body of the reaction chamber not only provides a pollution-free reaction environment but also can withstand high-temperature process environments. Meanwhile, the reaction chamber auxiliary bodies (i.e., the first auxiliary cavity 130 and the second auxiliary cavity 140) formed by the second upper quartz component 161 and the first upper quartz component 151, and the second lower quartz component 165 and the first lower quartz component 155, provide gas pressure transition, thermal insulation, and enhance the overall structural stability. The first flange 181 and the second flange 182 mentioned above both adopt a rectangular ring structure design. The first flange 181 is used to fix the first upper quartz component 151 and the first lower quartz component 155 and provide support for the main body of the reaction chamber. Furthermore, in conjunction with the first upper quartz component 151, the first lower quartz component 155, and the fastening component 190, it effectively separates the gas flow space between the main body of the reaction chamber and the reaction chamber auxiliary bodies, preventing the gas from mixing between the cavities. The second flange 182 is used to fix the second upper quartz piece 161 and the second lower quartz piece 165, and cooperates with the second upper quartz piece 161, the second lower quartz piece 165 and the fastening member 190 to achieve the overall fastening of the equipment.

[0058] In this embodiment, both the first auxiliary cavity 130 and the second auxiliary cavity 140 are provided with multiple heating elements 310, such as... Figure 3 As shown, the orthographic projections of these heating elements 310 on the wafer substrate 171 are arranged radially along the circumference of the wafer substrate 171. Furthermore, the angular spacing between the orthographic projections of adjacent heating elements 310 is equal. This uniformly distributed radial arrangement enables uniform heating of the wafer 172 to be processed on the wafer substrate 171, thereby improving the temperature uniformity of the epitaxial process, and consequently improving the thickness uniformity of the epitaxial film, ultimately enhancing product quality. Of course, in some optional embodiments, the heating elements 310 can also be arranged in a ring along the concentric circumference of the wafer substrate 171, with equal radial distances between adjacent rings. The number of heating elements 310 on each ring can be determined according to the ring circumference based on the principle of equal spacing. This arrangement not only enables zoned heating control from the inside out but also allows for flexible adjustment of the heating power according to the temperature requirements of different areas. In some optional embodiments, the heating elements 310 can be arranged in a spiral pattern, that is, the heating elements 310 are uniformly arranged along a spiral curve from the center of the wafer substrate 171 outward. By controlling the rotation angle and radial growth rate of the spiral, the distribution density of the heating elements 310 can ensure that the temperature deviation of each area on the surface of the wafer 172 is controlled within ±1℃, thereby achieving precise temperature control of the wafer 172 and ensuring the uniformity of epitaxial film growth. Of course, the arrangement of the heating elements 310 is not limited to the above-described manner.

[0059] It should be noted that in this embodiment, the heating element 310 can be a radiant heating method such as a halogen heating bulb. In some optional embodiments, the heating element 310 can also be in various forms such as a resistance wire heater, an induction heating coil, or a silicon carbide heating element. Among them, the resistance wire heater heats by its own resistance and utilizes the principle of heat conduction, and has the characteristics of rapid response and uniform temperature; the induction heating coil generates eddy currents in the wafer substrate 171 through the principle of electromagnetic induction, thereby achieving non-contact rapid heating; the silicon carbide heating element not only has good thermal conductivity and high temperature resistance, but also can achieve local temperature regulation through precise temperature control, thereby meeting the requirements of different process temperatures and improving the growth quality of the epitaxial film.

[0060] The above provides a detailed description of a semiconductor epitaxial process apparatus provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A semiconductor epitaxial process apparatus, characterized in that, include: The main cavity has a wafer base inside, which is used to support the wafer. The main cavity has a cuboid structure. The main cavity has a first sidewall and a second sidewall arranged horizontally opposite each other. An air inlet is provided on the first sidewall and an exhaust outlet is provided on the second sidewall. Process gas is introduced into the main cavity through the air inlet in a first direction parallel to the support surface of the wafer base. The process gas forms a horizontal laminar flow channel in the main cavity. The extension direction of the horizontal laminar flow channel is perpendicular to the first sidewall and the second sidewall and passes through the air inlet and the exhaust outlet. Along the second direction of the main cavity, the size of the exhaust port is greater than or equal to the size of the air inlet; wherein the second direction is perpendicular to the first direction.

2. The semiconductor epitaxial process equipment as described in claim 1, characterized in that, Also includes: The first auxiliary cavity is located above the main cavity; The second auxiliary cavity is located below the main cavity; The pressure difference between the first auxiliary cavity and the second auxiliary cavity and the main cavity is constant at 100-200 Torr.

3. The semiconductor epitaxial process equipment as described in claim 2, characterized in that, The main cavity is a cuboid structure with openings at the top and bottom. The first auxiliary cavity and the second auxiliary cavity are each provided with a first quartz element on the opening side facing the main cavity. The first quartz element is used to isolate the main cavity from the first auxiliary cavity and the second auxiliary cavity. The first auxiliary cavity and the second auxiliary cavity are each provided with a second quartz element opposite to the first quartz element on the opening side facing away from the main cavity.

4. The semiconductor epitaxial process equipment as described in claim 3, characterized in that, The first quartz component includes a first main body, which is horizontally positioned, and the periphery of the first main body is fixed to a fastening member via a first flange.

5. The semiconductor epitaxial process equipment as described in claim 4, characterized in that, The main cavity opening sidewall is provided with a protrusion; the first quartz component also includes a first support portion, which is located at the periphery of the first main body portion. The first support portion and the protrusion of the main cavity opening sidewall are in contact with the first auxiliary cavity / second auxiliary cavity and are fixed to the fastening member by the first flange.

6. The semiconductor epitaxial process equipment as described in claim 5, characterized in that, Each of the opposing surfaces of the first support portion is provided with a first sealing element. The side of the first support portion facing away from the main cavity is sealed to the first flange through the first sealing element. The side of the first support portion facing the main cavity is sealed to the side of the protrusion of the opening sidewall of the main cavity facing the first support portion through the first sealing element. The first flange is sealed to the top surface of the opening of the main cavity.

7. The semiconductor epitaxial process equipment as described in claim 4, characterized in that, The second quartz component includes a second main body, the side of the second main body facing the first auxiliary cavity / second auxiliary cavity being flat and horizontal; the periphery of the second main body facing the main cavity is fixed to the fastening member by the first flange, and the periphery of the second main body facing away from the main cavity is fixed to the fastening member by the second flange.

8. The semiconductor epitaxial process equipment as described in claim 7, characterized in that, The second quartz component includes a second support portion located at the periphery of the second main body portion. The opposing surfaces of the second support portion are provided with second sealing elements. The side of the second support portion facing the main cavity is sealed to the first flange through the second sealing element, and the side of the second support portion facing away from the main cavity is sealed to the second flange through the second sealing element.

9. The semiconductor epitaxial process equipment as described in claim 8, characterized in that, The first flange is also provided with a third sealing element; the fastening member is also provided with fasteners.

10. The semiconductor epitaxial process equipment as described in claim 2, characterized in that, Both the first auxiliary cavity and the second auxiliary cavity are provided with a plurality of heating elements; the orthographic projections of the plurality of heating elements on the wafer substrate are arranged radially along the circumferential direction of the wafer substrate, and the angular spacing between the orthographic projections of adjacent heating elements is equal.

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