Wafer detection system
Through automated resistance measurement and module integration, efficient and low-cost wafer defect detection has been achieved, solving the problems of high labor costs and high wafer wear rate in existing technologies, and improving detection efficiency and system miniaturization.
Patent Information
- Application Number
- CN202520077322.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-14
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2035-01-14
AI Technical Summary
Existing wafer inspection systems suffer from high labor costs, high risk of data comparison errors, and high wafer wear rates when inspecting high-resistivity wafers.
A wafer inspection system was designed, comprising a handling module, a positioning module, a resistance measurement module, a judgment module, a first defect detection module, and a second defect detection module. Through automated resistance measurement and judgment, the system selectively uses infrared or X-ray detection units to detect defects in the wafer, reducing manual intervention and repetitive operations.
It reduces labor costs, minimizes the risk of data comparison errors, and achieves efficient automation and miniaturization of wafer inspection through module integration, thereby reducing wafer wear rate.
Smart Images
Figure CN223883471U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present utility model relates to a wafer detection system. More particularly, the present utility model relates to a wafer detection system comprising a plurality of defect detection modules. BACKGROUND
[0002] In known wafer detection systems, it is often difficult to detect wafers with high resistance values using infrared detection machines, and using X-ray detection machines has the disadvantages of slow speed and high cost. For the foregoing reasons, one of the common methods currently used is to first measure the resistance values of wafers manually, and then select an infrared detection machine or an X-ray detection machine for use according to the measured resistance values, so as to detect the holes or defects of the wafers.
[0003] However, the foregoing known method not only requires a high labor cost, but also has the risk of data comparison errors and misuse of machines. In addition, since the known method requires the use of multiple different machines, the wafer must be repeatedly loaded and unloaded, which can easily increase the wear and tear of the wafer.
[0004] Therefore, how to provide a wafer detection system that can reduce costs and improve efficiency has become an important topic for researchers in the technical field of the present utility model. SUMMARY
[0005] A wafer detection system comprises a conveying module, a positioning module, a resistance value measurement module, a judgment module, a first defect detection module, and a second defect detection module. The conveying module can be used to grasp and move a wafer, and the positioning module can be used to position the wafer. The resistance value measurement module can measure the resistance value of the wafer positioned by the positioning module. The judgment module can determine whether the resistance value is greater than a threshold value.
[0006] In an embodiment, when the resistance value is less than the threshold value, the first defect detection module performs a first defect detection on the wafer. On the other hand, when the resistance value is greater than the threshold value, the second defect detection module performs a second defect detection on the wafer.
[0007] In an embodiment, the first defect detection module comprises an infrared detection unit for performing a first defect detection on the wafer, and the second defect detection module comprises an X-ray detection unit for performing a second defect detection on the wafer.
[0008] In an embodiment, the first defect detection module further comprises a first chamber, and the second defect detection module further comprises a second chamber, wherein the infrared detection unit is disposed in the first chamber, and the X-ray detection unit is disposed in the second chamber.
[0009] In an embodiment, the wafer detection system further comprises a pretreatment area, and the positioning module and the resistance measurement module are disposed in the pretreatment area.
[0010] In an embodiment, the handling module is located between the positioning module and the resistance measurement module.
[0011] In an embodiment, the pretreatment area is adjacent to the first chamber and the second chamber.
[0012] In an embodiment, the second chamber is adjacent to the first chamber.
[0013] In an embodiment, the positioning module comprises a wafer aligner.
[0014] In an embodiment, the resistance measurement module comprises an eddy current sensor or a four-point probe resistance measurement meter.
[0015] In an embodiment, the judging module and the resistance measurement module perform data transmission through wired or wireless means. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 A schematic diagram of a wafer detection system 100 according to an embodiment of the present application;
[0017] Figure 2 A schematic diagram showing the handling module R moving the wafer W to the positioning module 12;
[0018] Figure 3 A schematic diagram showing the handling module R moving the wafer W to the resistance measurement module 13;
[0019] Figure 4 A schematic diagram showing the handling module R moving the wafer W to the first defect detection module M1;
[0020] Figure 5 A schematic diagram showing the handling module R moving the wafer W to the second defect detection module M2;
[0021] Figure 6 A flowchart showing the detection operation of the wafer detection system 100 on the wafer W.
[0022] SYMBOL DESCRIPTION
[0023] 100: wafer detection system
[0024] P: Preprocessing area
[0025] R: Transport Module
[0026] 11: Storage Unit
[0027] 111: Wafer Box
[0028] 112: Wafer Box
[0029] 12: Positioning Module
[0030] 13: Resistance Measurement Module
[0031] 14: Judgment Module
[0032] C1: First Chamber
[0033] C2: Second Chamber
[0034] G1: First gate
[0035] G2: Second gate
[0036] L1: Infrared detection unit
[0037] L2: X-ray detection unit
[0038] M1: First Defect Detection Module
[0039] M2: Second Defect Detection Module
[0040] S1: Steps
[0041] S2: Steps
[0042] S3: Steps
[0043] S4: Steps
[0044] S51: Steps
[0045] S52: Steps
[0046] S6: Steps
[0047] W: Wafer Detailed Implementation
[0048] The following describes a wafer inspection system according to embodiments of the present invention. However, it will be readily apparent that the embodiments of the present invention provide many suitable inventive concepts that can be implemented in a wide range of specific contexts. The specific embodiments disclosed are merely illustrative of the use of the present invention in particular ways and are not intended to limit the scope of the present invention.
[0049] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an overly literal or overly formal sense unless expressly so defined herein.
[0050] The foregoing and other technical contents, features and effects of the present application will be clearly presented in the following detailed description of a preferred embodiment in conjunction with the accompanying drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, are only the directions of the accompanying drawings. Therefore, the directional terms used in the embodiments are used for illustration, not for limiting the present application.
[0051] First, please refer to Figure 1 , wherein Figure 1 represents a schematic diagram of a wafer detection system 100 of an embodiment of the present application.
[0052] As Figure 1 shown, the wafer detection system 100 of an embodiment of the present application is mainly used to detect the holes and defects of the wafer, which includes a pretreatment area P, a carrying module R, a storage unit 11, a positioning module 12, a resistance measurement module 13, a judgment module 14, a first defect detection module M1 and a second defect detection module M2.
[0053] The aforementioned storage unit 11 is located at one side of the pretreatment area P, and it can include one or several wafer boxes. Specifically, the storage unit 11 in the present embodiment includes two wafer boxes 111, 112 for storing wafers W, and the aforementioned carrying module R, resistance measurement module 13 and judgment module 14 are arranged in the pretreatment area P, wherein the aforementioned carrying module R can include a mechanical arm for taking out the wafers W in the wafer boxes 111, 112, or can put the wafers W into the wafer boxes 111, 112.
[0054] It should be understood that the aforementioned carrying module R can also selectively move the wafers W to the aforementioned positioning module 12, resistance measurement module 13, first defect detection module M1 or second defect detection module M2, and the position of the aforementioned carrying module R is between the positioning module 12 and the resistance measurement module 13, so as to effectively utilize the internal space of the pretreatment area P, thereby helping to achieve the miniaturization of the wafer detection system 100.
[0055] In addition, from Figure 1As can be seen, the judging module 14 is disposed at one side of the pre-processing area P, wherein the aforementioned judging module 14 can comprise integrated circuits such as central processing units (CPUs) and / or memories, and the judging module 14 and the resistance measuring module 13 can transmit data through wired or wireless ways.
[0056] In an embodiment, the aforementioned judging module 14 can also be disposed at other sides of the pre-processing area P or the first and second defect detection modules Ml, M2, or can also be disposed separately from the pre-processing area P and the first and second defect detection modules Ml, M2, and is not limited to the embodiments disclosed in the present application.
[0057] The aforementioned pre-processing area P, first defect detection module Ml and second defect detection module M2 are disposed adjacently, wherein the first defect detection module Ml has a first chamber Cl and an infrared detection unit Ll, the aforementioned infrared detection unit Ll is disposed in the first chamber Cl, and the aforementioned first chamber Cl can be connected with the aforementioned pre-processing area P through a first gate Gl.
[0058] Similarly, the aforementioned second defect detection module M2 has a second chamber C2 and an X-ray detection unit L2, the aforementioned X-ray detection unit L2 is disposed in the second chamber C2, and the aforementioned second chamber C2 can be connected with the aforementioned pre-processing area P through a second gate G2.
[0059] Next, please refer to Figure 2 , wherein Figure 2 represents a schematic diagram of the transporting module R moving the wafer W to the positioning module 12.
[0060] As Figure 2 shown, when hole or defect detection is to be performed on the wafer W in the storage unit 11, the wafer W in the wafer box 111 or wafer box 112 can be first grabbed by the transporting module R, and then the wafer W is moved to the positioning module 12 for alignment and correction of the position and angle of the wafer W.
[0061] For example, the aforementioned positioning module 12 comprises a wafer aligner such as a flat finder or a notch finder for positioning the wafer W, for detecting and adjusting the angle and / or position of the wafer W.
[0062] Next, please refer to Figure 3 , wherein Figure 3 represents a schematic diagram of the transporting module R moving the wafer W to the resistance measuring module 13.
[0063] As Figure 3As shown, after the wafer W is calibrated and positioned by the positioning module 12, the transport module R can move the wafer W to the resistance measurement module 13, and measure the resistance value of the wafer W through the resistance measurement module 13.
[0064] For example, the aforementioned resistance measurement module 13 may include an eddy current sensor or a four-point probe resistance meter to measure the resistance value of the aforementioned wafer W. The resistance value information can be transmitted to the judgment module 14 via wired or wireless means, and the judgment module 14 can transmit a drive signal to the transport module R according to the magnitude of the resistance value, so that the transport module R can transport the wafer W to the first defect detection module M1 or the second defect detection module M2 for subsequent hole or defect detection.
[0065] Please refer to the following: Figure 4 ,in Figure 4 This diagram illustrates how the transport module R moves the wafer W to the first defect detection module M1.
[0066] like Figure 4 As shown, after the aforementioned judgment module 14 obtains the resistance value information of the wafer W measured by the resistance measurement module 13, the judgment module 14 can determine whether the resistance value is less than a preset threshold value. If the resistance value is less than the threshold value, the judgment module 14 can send a first driving signal to the transport module R. At this time, the transport module R can move the wafer W through the first gate G1 to the first defect detection module M1, and can use the infrared detection unit L1 inside the first chamber C1 to perform a first defect detection on the wafer W.
[0067] Please see again Figure 5 ,in Figure 5 This diagram illustrates how the transport module R moves the wafer W to the second defect detection module M2.
[0068] like Figure 5 As shown, when the aforementioned judgment module 14 obtains the resistance value information of the wafer W measured by the resistance measurement module 13, if the resistance value is greater than the threshold value, the judgment module 14 will send a second driving signal to the transport module R. At this time, the transport module R can move the wafer W through the second gate G2 to the second defect detection module M2, and can use the X-ray detection unit L2 inside the second chamber C2 to perform a second defect detection on the wafer W.
[0069] It is particularly noted that after the wafer W is detected by the aforementioned infrared detection unit L1 or the X-ray detection unit L2, the aforementioned wafer W can be moved and carried back into the wafer cassette 111 or the wafer cassette 112 of the storage unit 11 by the carrying module R, so as to facilitate subsequent processing operations.
[0070] Next, please refer to Figures 1 to 6 , wherein Figure 6 represents the detection operation flowchart of the wafer detection system 100 on the wafer W.
[0071] As mentioned above, when the wafer W is to be detected for defects by the wafer detection system 100 of the present application, the wafer W can be first moved from the storage unit 11 into the pretreatment area P by the carrying module R to complete the feeding procedure (as shown in step S1 in Figure 1 and Figure 6 ), and then the wafer W is transported to the positioning module 12 by the carrying module R, and a positioning procedure is performed on the wafer W by the positioning module 12 (as shown in step S2 in Figure 2 and Figure 6 ).
[0072] After that, the wafer W can be transported to the resistance measurement module 13 by the carrying module R, and a resistance measurement procedure is performed on the wafer W by the resistance measurement module 13 (as shown in step S3 in Figure 3 and Figure 6 ), wherein the resistance value information of the wafer W is transmitted to the judgment module 14, and the aforementioned judgment module 14 can drive the carrying module R to transport the wafer W to the first defect detection module M1 or the second defect detection module M2 according to the size of the resistance value (as shown in step S4 in Figure 6 .
[0073] After the aforementioned procedure is completed, if the resistance value is less than a threshold value, the wafer W will be moved to the first defect detection module M1 by the carrying module R, and a first defect detection can be performed on the wafer W by the infrared detection unit L1 inside the first chamber C1 (as shown in step S51 in Figure 4 and Figure 6 ).
[0074] On the contrary, if the resistance value is greater than the threshold value, the wafer W will be moved to the second defect detection module M2 by the carrying module R, and a second defect detection can be performed on the wafer W by the X-ray detection unit L2 inside the second chamber C2 (as shown in step S52 in Figure 5 and Figure 6 ).
[0075] Finally, when the wafer W is finished being detected, the reusable transfer module R can be used to transport the wafer W back to the wafer cassette 111 or the wafer cassette 112 of the storage unit 11, so as to complete the entire wafer detection process (as shown in step S6 in FIG. 1). Figure 6
[0076] In summary, the wafer detection system 100 can be used to measure the resistance value of the wafer W first, and then selectively move the wafer W to the first defect detection module M1 or the second defect detection module M2 according to the resistance value information of the wafer W. In this way, the wafers with different resistance values can be automatically screened and subjected to defect detection by using the infrared detection unit L1 or the X-ray detection unit L2, respectively, so as to greatly reduce the labor cost and effectively reduce the risk of data comparison errors and misuse of the machine.
[0077] On the other hand, the wafer detection system 100 can integrate different detection modules in the same machine system, so as to avoid the repeated loading and unloading of the wafer, reduce the wear probability of the wafer, and greatly improve the production efficiency and facilitate the miniaturization of the wafer detection system.
[0078] Although the embodiments of the wafer detection system 100 and the advantages thereof have been disclosed above, it should be understood that any person skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of the wafer detection system 100. In addition, the protection scope of the wafer detection system 100 is not limited to the processes, machines, manufacturing, material compositions, devices, methods, and steps in the specific embodiments described in the specification. Any person skilled in the art can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods, and steps from the disclosed content of the wafer detection system 100, as long as they can perform substantially the same function or achieve substantially the same result in the embodiments described herein. Therefore, the protection scope of the wafer detection system 100 includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods, and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the wafer detection system 100 also includes the combination of each claim and embodiment.
[0079] Although the wafer detection system 100 has been disclosed with the preferred embodiments above, it is not intended to limit the wafer detection system 100. Any person skilled in the art can make some modifications and refinements without departing from the spirit and scope of the wafer detection system 100. Therefore, the protection scope of the wafer detection system 100 is defined by the scope of the appended claims.
Claims
1. A wafer inspection system, characterized by, The wafer inspection system comprises: a handling module for grabbing and moving a wafer; a positioning module for positioning the wafer; a resistance value measurement module for measuring a resistance value of the wafer positioned by the positioning module; a judging module for judging whether the resistance value is greater than a threshold value; a first defect detection module for performing a first defect detection on the wafer when the resistance value is less than the threshold value; and a second defect detection module for performing a second defect detection on the wafer when the resistance value is greater than the threshold value. The first defect detection module comprises an infrared detection unit for performing the first defect detection on the wafer, and the second defect detection module comprises an X-ray detection unit for performing the second defect detection on the wafer.
2. The wafer inspection system of claim 1, wherein The first defect detection module further comprises a first chamber, and the second defect detection module further comprises a second chamber, wherein the infrared detection unit is disposed in the first chamber, and the X-ray detection unit is disposed in the second chamber.
3. The wafer inspection system of claim 2, wherein, The wafer inspection system further comprises a pretreatment area, and the positioning module and the resistance value measurement module are disposed in the pretreatment area.
4. The wafer inspection system of claim 3, wherein The handling module is located between the positioning module and the resistance value measurement module.
5. The wafer inspection system of claim 4, wherein The pretreatment area is adjacent to the first chamber and the second chamber.
6. The wafer inspection system of claim 4, wherein, The second chamber is adjacent to the first chamber.
7. The wafer inspection system of claim 6, wherein The positioning module comprises a wafer aligner.
8. The wafer inspection system of claim 1, wherein, The resistance value measurement module comprises an eddy current sensor or a four-point probe resistance measurement meter.
9. The wafer inspection system of claim 1, wherein The judging module and the resistance value measurement module perform data transmission through wired or wireless means.
10. The wafer inspection system of claim 1, wherein,