High-performance crystalline silicon photovoltaic module and photovoltaic system

Abstract

The utility model relates to a high-performance crystalline silicon photovoltaic module and photovoltaic system, the photovoltaic module comprises a front cover plate, a back cover plate and a plurality of solar crystalline silicon wafers, the back cover plate is arranged on one side of the front cover plate in the thickness direction, the plurality of solar crystalline silicon wafers are arranged between the front cover plate and the back cover plate, and the solar crystalline silicon wafers are arranged on the back cover plate. A plurality of electron transition grid lines which are uniformly arranged are arranged in the length direction of each crystal silicon wafer, and the distance between the electron transition grid lines is smaller than or equal to 1.1 cm. According to the utility model, the spacing is set as the specification, and the electric flux of the photovoltaic module is ensured to meet the condition that E is more than or equal to 1 and less than or equal to 1.82, so that the silicon wafers and the module structure of the photovoltaic module are designed to meet the condition of a linear power supply, and after a certain electric flux range is reached, the problems in the prior art can be solved.

Description

TECHNICAL FIELD

[0001] The utility model relates to solar photovoltaic module technical field especially relates to a high performance crystalline silicon photovoltaic module and photovoltaic system. BACKGROUND

[0002] The development of human being cannot leave energy, with the rapid development of economy, the demand for energy is increasing, traditional fuel energy: coal, oil and natural gas etc. have caused serious environmental pollution, making people's living environment deteriorate. In order to realize sustainable development, protect the survival environment of human being, use the renewable energy friendly to the environment will become more and more urgent, the proportion of the clean new energy friendly to the environment that can directly convert solar energy into electric energy - solar cell in energy demand will be higher and higher, and will become the main way of energy demand.

[0003] The photovoltaic module is the core component of solar power generation system, and is the basic element of photovoltaic power generation, and the photovoltaic module is also called solar cell panel, which is connected and tightly packaged by a plurality of single high-efficiency crystalline silicon solar cell pieces through a certain mode, and the components include cell piece, encapsulating adhesive film, photovoltaic glass, frame, junction box and the like, has the function of converting solar energy into electric energy and sending to the storage battery for storage, and can also drive the load to work, and is the core part of the solar system. The photovoltaic module can be divided into crystalline silicon module and thin film module according to different use materials, and the crystalline silicon module can be further divided into single glass module and double glass module according to whether the back plate is glass.

[0004] With the large-scale construction of photovoltaic power station, the photovoltaic power station has become an important part of the distribution network. Due to the instability, intermittency and nonlinear characteristics of the key equipment of the photovoltaic power station, the photovoltaic power station connected to the distribution network seriously affects the safety and stability of the power grid. Among them, the harmonic, voltage fluctuation and flicker problem is the most serious. This oscillating power supply will cause public grid frequency pollution and high voltage discharge danger after being connected to the grid. High voltage discharge is equivalent to a lightning event, and the photovoltaic power station is on fire in a row, and the regional power grid will be paralyzed in an instant. With the high attention to the safety and stability of the power grid, the harmonic and flicker problem also needs to be solved.

[0005] In the prior art, the solutions to the photovoltaic grid-connected harmonic, voltage fluctuation and flicker problem mainly include: 1) optimizing the control strategy of photovoltaic grid-connected inverter to improve the stability of voltage; 2) increasing the short-circuit capacity of transformer substation bus; 3) in the case of determined photovoltaic power station capacity, improving the power factor to increase the total amount of active power, thereby reducing the amount of reactive power change, and meeting the limit value requirement of voltage fluctuation. However, the basic performance of the photovoltaic module itself is ignored.

[0006] In addition, in the prior art, the photoelectric conversion efficiency of the photovoltaic module is always low, and the current relatively high conversion efficiency is about 24.8%, which is lower than 30%. The power generation efficiency of the photovoltaic grid-connected relay load is currently not higher than 50% (35.7%), which is a pain point and difficulty in the industry, causing great waste of energy and resources.

[0007] Therefore, a high-quality photovoltaic module not only needs to bring high power generation, but also needs to consider high safety, eliminate the hidden dangers of grid connection, and eliminate the problems of harmonics and voltage flicker of grid connection. Practical new type content

[0008] In order to overcome the shortcomings of the prior art, the utility model provides a kind of high-performance crystalline silicon photovoltaic module and photovoltaic system, can improve the conversion efficiency of photovoltaic module, and can solve the current harmonic, voltage fluctuation and flicker problem in photovoltaic grid connection.

[0009] A kind of high-performance crystalline silicon photovoltaic module, the photovoltaic module includes front cover, back cover and multiple solar crystalline silicon pieces, the back cover is arranged on one side of the thickness direction of the front cover, the multiple solar crystalline silicon pieces are arranged between the front cover and the back cover, a plurality of uniform arrangement electron transition grid lines are arranged in the length direction of each crystalline silicon piece, and the pitch of the electron transition grid line is less than or equal to 1.1 cm.

[0010] As described above, the aspect and any possible implementation mode are further provided, and an implementation mode is provided, the multiple solar crystalline silicon pieces form crystalline silicon piece group string, a plurality of the crystalline silicon piece group strings form first unit and second unit, and the first unit and the second unit include the same number of crystalline silicon piece group strings, a plurality of crystalline silicon piece group strings in the first unit and the second unit are connected in parallel, and the first unit and the second unit are connected in series.

[0011] As described above, the aspect and any possible implementation mode are further provided, and an implementation mode is provided, the photovoltaic module further includes encapsulation layer, the encapsulation layer laminates and encapsulates the front cover and the back cover of the photovoltaic module, and the electric flux E of the photovoltaic module, i.e. the ratio of working current and working voltage, satisfies 1≤E≤1.82.

[0012] As described above, the aspect and any possible implementation mode are further provided, and an implementation mode is provided, the length and width of each solar crystalline silicon piece are 182mm×101mm, and the number of electron transition grid lines printed on the surface of the solar crystalline silicon piece is 16.

[0013] As described above, the aspect and any possible implementation mode are further provided, and an implementation mode is provided, a grid ring line is further arranged around the electron transition grid line.

[0014] As the aspect and any possible implementation manner described above, further provided is an implementation manner, the photovoltaic assembly further comprises a series conductive wideband, the series conductive wideband connects the negative pole of the first unit with the positive pole of the second unit.

[0015] As the aspect and any possible implementation manner described above, further provided is an implementation manner, the first unit negative pole is a line set formed by electron transition grid lines at one end of all crystalline silicon piece group strings of the first unit, the line set is connected on the series conductive wideband, and the positive pole of the second unit is a proton transport band connecting one end of all crystalline silicon piece group strings of the second unit, the proton transport band is also connected on the series conductive wideband.

[0016] As the aspect and any possible implementation manner described above, further provided is an implementation manner, the output positive pole of the photovoltaic assembly is a proton transport band connecting the other end of all crystalline silicon piece group strings of the first unit, the proton transport band is connected on the first unit positive pole busbar and is output through a positive output thyristor module, and the output negative pole of the photovoltaic assembly is a line set formed by all electron transition grid lines at the other end of the second unit crystalline silicon piece group string, the line set is connected to the second unit negative pole busbar and is output through a negative output thyristor module.

[0017] As the aspect and any possible implementation manner described above, further provided is an implementation manner, each crystalline silicon piece group string is provided with a plurality of crystalline silicon pieces connected in series, the number of crystalline silicon piece group strings of the first unit and the second unit is 3 respectively, the series conductive wideband has a length of 110.4cm, a width of 1.5cm and a thickness of 0.024cm, and the overcurrent capacity is DC 60A.

[0018] The utility model further provides a photovoltaic system, the photovoltaic system includes the photovoltaic assembly.

[0019] Compared with the prior art, the utility model has the following beneficial effects:

[0020] The high-performance crystalline silicon photovoltaic assembly has the structure of the solar crystalline silicon piece, the interval of the electron transition grid line is less than or equal to 1.1cm, and the grid ring line is designed; in addition, the photovoltaic assembly is connected in parallel first and then connected in series, so that the electric flux of the photovoltaic assembly meets the condition of 1≤E≤1.82, and becomes a stable power supply without harmonic and voltage flicker. Therefore, the crystalline silicon piece and the assembly structure of the photovoltaic assembly are designed, so that the condition of the linear power supply is met, and the problems in the prior art can be solved when a certain electric flux range is reached. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1is a schematic diagram of printing a grid line on a surface of a solar silicon wafer;

[0022] Figure 2 is a schematic diagram of a structure of a photovoltaic module. DETAILED DESCRIPTION

[0023] For better understanding of the technical scheme of the present application, the embodiments of the present application will be described in detail below with reference to the drawings.

[0024] It should be clear that the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all the embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0025] The terms used in the embodiments of the present application are only for the purpose of describing the specific embodiments, and are not intended to limit the present application. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0026] It should be understood that the term "and / or" used herein is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B can represent: A exists alone, A and B exist together, and B exists alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0027] It should be noted that the "up", "down", "left", "right" and other directional words described in the embodiments of the present application are described from the angle shown in the drawings, and should not be understood as limiting the embodiments of the present application. In addition, in the context, it should also be understood that when referring to an element connected to another element "on" or "below", it can be directly connected to another element "on" or "below", or indirectly connected to another element "on" or "below" through an intermediate element.

[0028] It should be noted that the steps shown in the flowchart of the drawings can be executed in a computer system such as a group of computer executable instructions, and although the logical order is shown in the flowchart, the order of the steps of the embodiments is not limited to the order arranged in this specification, and in some cases, the implementation steps can be adjusted according to the specific needs, and the steps shown or described in different order from here.

[0029] The main parameters of the photovoltaic module include: (rated) power, working voltage and working current. In the utility model, the electric flux E of the photovoltaic module is defined as working current / working voltage (unit: A / V), which is the ratio of the working current and the working voltage of the photovoltaic module. This ratio is very important in the utility model, and is an important index for measuring the conversion efficiency of the photovoltaic module and whether it is a linear power supply.

[0030] In the conventional photovoltaic module, taking more typical data (rated current, rated voltage, rated power) as an example:

[0031] First-generation photovoltaic module: 3.3A 36V 118.8W

[0032] E=3.3A / 36V=0.092A / V;

[0033] Second-generation photovoltaic module: 5.0A 36V 180W

[0034] E=5.0A / 36V=0.139A / V;

[0035] Third-generation photovoltaic module: 7.7A 36V 277.2W

[0036] E=7.7A / 36V=0.214A / V;

[0037] Fourth-generation photovoltaic module: 8.67A 36V 312W

[0038] E=8.67A / 36V=0.24A / V;

[0039] Fifth-generation photovoltaic module: 9.86A 36V 325.4W E=9.86A / 36V=0.299A / V;

[0040] Sixth-generation photovoltaic module: 13.12A 42V 551W E=13.12A / 42V=0.312A / V.

[0041] The electric flux of the above photovoltaic module is between 0.092A / V and 0.312A / V, which is a non-linear interval, i.e. it does not conform to Ohm's law.

[0042] The value of the electric flux E of the ideal photovoltaic module should be: 1≤E≤1.82(A / V), which is the linear power supply electric flux interval.

[0043] This is because a photovoltaic module (equivalent to a power panel) can be considered as an independent power source. Regardless of the size of the light-receiving surface of a silicon crystal solar photovoltaic cell, it is a static unit. In the original static unit, with a normal voltage of 0.55 volts suppressed by a normal resistance of 0.55 ohms, the usable current intensity is 1 ampere. That is, the normal current of 1 static unit is 1 ampere, the voltage is 0.55 volts, and the resistance is 0.55 ohms.

[0044] The flux is calculated as follows: 1 ampere of normal current / 0.55 volts of normal voltage = 1.82 amperes per volt. This means that 1 volt of voltage automatically generates 1.82 amperes of current, which is the source of the upper limit of the above flux. The lower limit of 1 ampere per volt is the reference flux for the electrostatic field. The above data are derived from the calculation results in Table 1 below.

[0045] Table 1. Rated Capacity and Dynamic Display Parameters of Monocrystalline Silicon Semiconductors

[0046]

[0047] In electrostatic units, the output of the DC bus, i.e. the basic linear trajectory of current flux E = 1 Ampere / 0.55 Volt = 1.82 Ampere / Volt, means that each volt of basic potential (voltage) can quantitatively start a rated current of 1.82 Amperes.

[0048] To achieve the above requirements, the existing photovoltaic panels need to be structurally modified to meet the aforementioned power flux conditions.

[0049] like Figure 1 The diagram shows a schematic of grid line printing on the surface of a crystalline silicon photovoltaic module unit slice (single crystalline silicon wafer). 1 represents the overall structure of the front side of a single crystalline silicon wafer; 2 represents the grid ring lines surrounding the electron transition grid lines printed with silver paste on the front side of the single crystalline silicon wafer; 3 represents the electron transition grid lines printed with silver paste along the length direction on the front side of the single crystalline silicon wafer, also known as longitudinal grid lines; 4 represents the grid line interconnection segments printed with silver paste on the front side of the single crystalline silicon wafer, also known as transverse grid lines. All transverse grid lines 4 are perpendicular to all longitudinal grid lines 3 and arranged at certain intervals.

[0050] In a specific embodiment of this utility model, a single silicon wafer can be rectangular, rounded square, or circular. Taking a rectangular wafer as an example, the area of ​​a single silicon wafer is 182mm x 101mm, that is, the length is 182mm and the width is 101mm. In order to continuously provide electrons, 16 vertical grid lines printed with silver paste are arranged along the length direction on the front side of the single silicon wafer, and correspondingly, 4 grid segments (horizontal grid lines) are set perpendicularly connected to the 16 vertical grid lines.

[0051] The calculation mode of the time interval of the single crystal silicon wafer in the rectangular, rounded square or circular shape is as follows: when the rectangular shape is set as L for the length and R for the width, N grid lines are arranged in the length direction of the crystal silicon wafer, and the interval D of the grid lines is calculated as follows: D = L / (N+1)≤1.1cm, if the rounded square shape is taken, the maximum side length is taken as L, and if the circular shape is taken, the length of the diameter is taken as L.

[0052] In the utility model, compared with the prior art, the electronic transition grid line is encrypted, and the electric energy conversion efficiency is obviously improved.

[0053] In the prior art, the photovoltaic module unit (single solar wafer) is provided with 4 electronic transition grid lines (vertical grid lines) on 182mmx101mm, and in the utility model, 16 electronic transition grid lines are arranged on the single solar wafer.

[0054] In principle, to improve the electric flux of the photovoltaic module, the density of the electrons forming the current needs to be improved, and under the condition of a certain electromotive force difference, the more electrons passing through per unit time, the greater the current / voltage value.

[0055] The crystal silicon wafer semiconductor is essentially a negative element, in which the photon is a proton, also called a positive ion, and is also called a filling factor; the silicon electron of-2 valence and the photon of+5 valence are combined, and the public multiple 10 of the valence of the combined silicon electron and the photon is the same, so that the electric energy can be converted. The metal coating on the back of the crystal silicon semiconductor is a conductive positive electrode, and the grid line printed on the front surface of the crystal silicon semiconductor represents a conductive negative electrode, so the grid line is a route for electronic transition. In the prior art, the grid line printed on the surface of the 182mmx101mm crystal silicon wafer is generally between 4 and 6, and if the interval between the grid lines is greater than 3cm, the space of the grid line directly hinders the transition of the electrons, and the edge of the crystal silicon wafer has no transition space for the electrons, so that the photons cannot be fully paired, and the unpaired photons automatically disappear, which causes the low conversion efficiency.

[0056] In the prior art, the electronic transition grid line printed by silver paste is generally 6 or 8, and in the utility model, the number of the grid lines is increased to 16 on the single crystal silicon wafer, so that the density of the grid lines is doubled, thereby completely eliminating the domain resistance of the electronic transition, greatly increasing the filling number of the photons and the pairing number of the electrons, and greatly improving the electric energy conversion efficiency of the crystal silicon semiconductor.

[0057] The photovoltaic system composed of the conventional photovoltaic module composed of 4 electronic transition grid lines of the crystal silicon wafer is compared with the photovoltaic system composed of the photovoltaic module composed of 16 electronic transition grid lines of the crystal silicon wafer in the utility model in terms of parameters and results, as shown in Table 2.

[0058] Table 2 Comparison table of conventional photovoltaic module constituting photovoltaic system and photovoltaic system constituted by photovoltaic module of the utility model

[0059]

[0060]

[0061] The data in the above table show that after the electronic transition grid line of the 182mmx101mm crystalline silicon wafer is encrypted, the single wafer electric energy conversion efficiency is increased by 1.519W / 3.6025Wx100%=42.2%.

[0062] It can be seen that in the above table, the conventional photovoltaic module and the photovoltaic module of the utility model adopt the same 182mmx101mm wafer specification, the same material and the same area, but their power generation effects are completely different:

[0063] The photovoltaic system constituted by the conventional photovoltaic module has a theoretical installed (rated) power of 840V / 13.12A / 11.088KW, and actually outputs 774.9V / 12.76A / 9.87KW grid-connected relay power. According to the actual load and the specific equipment of the power field, it can be calculated that the 9.87KW apparent power includes 30% effective power and 70% reactive power.

[0064] The photovoltaic system constituted by the photovoltaic module of the utility model has a theoretical installed (rated) power of 280.5V / 39.3A / 11.024KW, and actually outputs 288.58V / 53.15A / 15.335KW grid-connected relay power. The 15.335KW apparent power belongs to 100% effective power.

[0065] As can be seen from the embodiment of the utility model, with equal installed power and the same light receiving area, compared with the conventional technology, the output grid-connected relay power of the utility model is increased: 15.335KW-9.87KW=5.465KW, and the power generation capacity of the same installed capacity is increased by 5.465KW / 9.87KWx100%=55.36%.

[0066] From the principle, to improve the electric flux of the photovoltaic module, it is necessary to increase the density of the electrons forming the current. Under the condition of a certain electromotive force difference, the more electrons passing through per unit time, the greater the current / voltage value.

[0067] The comparison of the electric flux: the rated (theoretical installed) parameter of the conventional technology photovoltaic module in the above Table 2 is 42V / 13.1A / 550W (not shown in Table 2), the electric flux E = 13.1A / 42V = 0.3119A / V, which is a point charge online nonlinear power supply, and it is a virtual power supply with harmonic and voltage flicker oscillation changeable.

[0068] In addition, in Figure 1 the embodiment, in order to further enhance the number of electron transitions, a gate ring line 2 is arranged on the crystalline silicon wafer, as shown in Figure 1 , the gate ring line 2 surrounds the longitudinal gate line 3 and has a rectangular shape. The gate ring line 2 can realize electron convergence shunt, shunt convergence ring connection, eliminate resistance of electron outward transfer, increase channel of electron negative output, electron transfer access, and greatly increase the number of cation and anion pairing, thereby further improving the photoelectric conversion efficiency of the module.

[0069] In order to further improve the photoelectric conversion efficiency of the photovoltaic module and improve the grid-connected power and power generation capacity, the utility model also provides a photovoltaic module, as shown in Figure 2 , which is a photovoltaic module in the embodiment of the utility model, the photovoltaic module includes a front cover plate (transparent glass) and a back cover plate, the back cover plate is arranged on one side of the thickness direction of the front cover plate; the front cover plate and the back cover plate include a plurality of solar crystalline silicon wafers, wherein the front cover plate is made of transparent glass, and the back cover plate is made of plastic film.

[0070] The plurality of solar crystalline silicon wafers form a crystalline silicon wafer group string, a plurality of the crystalline silicon wafer group strings form a first unit 5 and a second unit 6, and the first unit 5 and the second unit 6 include the same number of crystalline silicon wafer group strings, a plurality of crystalline silicon wafer group strings in the first unit 5 and the second unit 6 are connected in parallel, and the first unit 5 and the second unit 6 are connected in series. In the embodiment, each unit of the first unit 5 and the second unit 6 includes three group strings, the three group strings are parallel structures, and according to Figure 1 the embodiment, a plurality of crystalline silicon wafers connected in series are arranged in each group string, and in the embodiment, 15 crystalline silicon wafers connected in series are preferred, each crystalline silicon wafer is provided with 16 electron transition gate lines (also referred to as longitudinal gate lines), and three parallel group strings have a total of 48 gate lines, as shown in Figure 2 , the 48 gate lines of the first unit 5 extend at one end of the photovoltaic module, and the 48 gate lines of the first unit 6 extend at the other end of the photovoltaic module.

[0071] The first unit negative electrode is a line set 17 formed by the electron transition grid lines at one end of all the crystalline silicon piece group strings of the first unit, and the line set 17 is concentratedly spot-welded on the series conductive wide band 19; the positive electrode of the second unit 6 is a proton transport band 18 connected to one end of all the crystalline silicon piece group strings of the second unit, and all the proton transport bands 18 are also connected to the series conductive wide band 19. In the three group strings of the second unit 6, five proton transport bands 18 are arranged on each group string, and there are a total of 15 proton transport bands in the three group strings, which are arranged at the other end of the photovoltaic module end part where the 48 grid lines are located, and all the proton transport bands 18 are also concentratedly spot-welded on the series conductive wide band 19, so that the series conductive wide band 19 connects the negative electrode of the first unit 5 and the positive electrode of the second unit in series, and is a wide band in which the voltages of the two units are superimposed. The length of the wide band is 110.4 cm, the width is 1.5 cm, and the thickness is 0.024 cm, and the current-carrying capacity is DC 60 A.

[0072] The output positive electrode of the photovoltaic module is a proton transport band 13 connected to the other end of all the crystalline silicon piece group strings of the first unit 5, and the proton transport band 13 is connected to the positive electrode bus wide band 15 of the first unit and is output through the forward output thyristor module 7. Specifically, in the three group strings of the first unit 5, five proton transport bands 13 are arranged uniformly at intervals on each group string, and there are a total of 15 proton transport bands, which are arranged at the other end of the photovoltaic module end part where the 48 grid lines are located, and the first unit 5 at this end is also provided with a positive electrode bus wide band 15; the 15 proton transport bands are spot-welded to the positive electrode bus wide band 15 and are also connected to the ELD60A forward output thyristor module 7, and the ELD60A forward output thyristor module 7 is arranged in the positive electrode 9 of the first unit.

[0073] The output negative electrode of the photovoltaic module is a line set 14 formed by all the electron transition grid lines at the other end of the crystalline silicon piece group strings of the second unit 6, and the line set 14 is connected to the negative electrode bus wide band 16 of the second unit and is output through the negative output thyristor module 8. Specifically, the line set 14 formed by the 48 grid lines in the second unit 6 is concentratedly spot-welded on the negative electrode bus wide band 16 arranged at this position of the second unit 6 and is connected to the ELD60A negative output thyristor module 8, and the ELD60A negative output thyristor module 8 is arranged in the negative electrode 10 of the second unit 6.

[0074] Figure 2 11, 12 and 20 in the above are encapsulation layers of the photovoltaic module, which laminate and encapsulate the front cover plate and the back cover plate of the photovoltaic module, and black insulating adhesive film is used to achieve this.

[0075] Preferably, in the present embodiment, the thickness of the proton transport bands 13 and 18 of each group string is 0.024 m, and the width is 0.5 cm.

[0076] In the technical scheme of the embodiment, the three groups of strings of the two units are connected in parallel first, the rated voltage and the rated current of each group of strings are 8.25 V and 9.04 A respectively, and then the rated voltage and the rated current of the three groups of strings connected in parallel are 8.25 V and 27.12 A respectively; the two units form two power generation units with the same capacity respectively, and then the two units are connected in series, and the total rated voltage and the total rated current of the first unit and the second unit connected in series are 16.5 V and 27.12 A.

[0077] In actual work, the power supply led out by the positive electrode 9 and the negative electrode 10 is measured as 16.98 V / 27.12 A / 460.5 W, which is a normal specification, at this time, the electric flux of the photovoltaic module is 27.12 A / 16.98 V = 1.597 ampere / volt, which meets the condition of 1≤E≤1.82 (ampere / volt), and is a linear power supply, therefore, the linear track of the photovoltaic module connected in series and in parallel belongs to a linear voltage stabilizing power supply; in actual work, the interval of 27.12 A / (14.78 V-24 V) is a stable voltage component without harmonics.

[0078] In other embodiments, if the number of silicon wafers in each group of strings is increased, a photovoltaic module with a maximum size of 24 V / 27.12 A / 650.88 W can be formed, at this time, the electric flux E of the photovoltaic module is 27.12 A / 22 V = 1.233 ampere / volt, which also meets the condition of 1≤E≤1.82 (ampere / volt), and therefore belongs to a stable voltage photovoltaic module without harmonic flicker.

[0079] The rated (theoretical installed) parameters of the photovoltaic module are 16.5 V / 19.65 A / 324.2 W, the electric flux E is 19.65 A / 16.5 V = 1.19 ampere / volt, which is linear data greater than 1 ampere / volt, and with the linear track, the photovoltaic module becomes the basis of power quality; and in work, the original 16.5 V / 19.65 A / 324.2 W module becomes an actual 16.98 V / 26.88 A / 456 W photovoltaic module, the electric flux E is 1.53 ampere / volt, which meets the condition of 1≤E≤1.82 of a linear power supply, and becomes a relatively stable component without harmonics and voltage flicker.

[0080] If the conversion efficiency of a single wafer is to be improved by more than 40%, and the photovoltaic module formed by the wafer meets the condition of 1≤E≤1.82 of a linear power supply, the utility model discloses that 16 electron transition grid lines are arranged on a single silicon wafer, so that the spacing between the electron transition grid lines is less than or equal to 1.1 cm. The above-mentioned 182 mm / (16+1) = 1.07 cm is within the range.

[0081] As the embodiment of the utility model discloses, the utility model also provides a photovoltaic system, the photovoltaic system includes several photovoltaic modules of the utility model.

[0082] According to the standard 1.74 ampere / volt linear requirement of power grid: 14.78V 27.12A 400.8W special specification assembly, E=27.12A / 14.78V=1.84 ampere / volt directly inverts 60 hertz high-quality electric power.

[0083] Therefore, through the technical scheme in the embodiment of the utility model, the photoelectric conversion efficiency of the photovoltaic module can be improved, compared with the current existing maximum specification highest conversion efficiency, the silicon crystal material is completely same, the light receiving area is completely equal, under the condition, the photovoltaic module of the utility model can additionally improve 38.76% or so conversion efficiency, this number has great significance.

[0084] In addition, the utility model can also make the photovoltaic module become linear power supply, become the component of no harmonic and no voltage flicker relative stabilization, can greatly save energy, improve efficiency and the safety of solar power grid.

[0085] The monocrystalline silicon solar wafer is adopted for the crystalline silicon wafer of the utility model.

[0086] The above is the preferred embodiment of the utility model, and the utility model is not limited to the above embodiment. It can be understood that other improvements and changes directly derived or thought of by those skilled in the art without departing from the spirit and concept of the utility model should be considered to be included in the protection scope of the utility model.

Claims

1. A high-performance crystalline silicon photovoltaic module, characterized in that, The photovoltaic module includes a front cover plate, a back cover plate, and multiple solar silicon wafers. The back cover plate is disposed on one side of the front cover plate in the thickness direction. The multiple solar silicon wafers are disposed between the front cover plate and the back cover plate. Each silicon wafer has multiple uniformly arranged electron transition grid lines in the length direction, and the spacing between the electron transition grid lines is less than or equal to 1.1 cm.

2. The photovoltaic module according to claim 1, characterized in that, The plurality of solar crystalline silicon wafers form a crystalline silicon wafer string, and several crystalline silicon wafer strings constitute a first unit and a second unit. The first unit and the second unit contain the same number of crystalline silicon wafer strings. Several crystalline silicon wafer strings in the first unit and the second unit are connected in parallel, and the first unit and the second unit are connected in series.

3. The photovoltaic module according to claim 1 or 2, characterized in that, The photovoltaic module also includes an encapsulation layer, which laminates and encapsulates the front cover and back cover of the photovoltaic module. The electrical flux E of the photovoltaic module, i.e. the ratio of the operating current to the operating voltage, satisfies 1≤E≤1.

82.

4. The photovoltaic module according to claim 1, characterized in that, Each of the solar crystalline silicon wafers measures 182mm in length and 101mm in width, and has 16 electron transition gate lines printed on its surface with silver paste.

5. The photovoltaic module according to claim 1, characterized in that, A gate ring line is also provided around the electron transition gate line.

6. The photovoltaic module according to claim 2, characterized in that, The photovoltaic module also includes a series conductive broadband, which connects the negative electrode of the first unit to the positive electrode of the second unit.

7. The photovoltaic module according to claim 6, characterized in that, The negative electrode of the first unit is a line set formed by the electron transition gate lines at one end of all the silicon wafers in the first unit, and the line set is connected to the series conductive broadband; the positive electrode of the second unit is a proton transport band connected to one end of all the silicon wafers in the second unit, and the proton transport band is also connected to the series conductive broadband.

8. The photovoltaic module according to claim 6, characterized in that, The positive output of the photovoltaic module is connected to the proton transport band at the other end of all the silicon wafer strings of the first unit. The proton transport band is connected to the positive busbar of the first unit and outputs through the positive output thyristor module. The negative output of the photovoltaic module is the line set formed by all the electron transition gates at the other end of the silicon wafer strings of the second unit. The line set is connected to the negative busbar of the second unit and outputs through the negative output thyristor module.

9. The photovoltaic module according to claim 6, characterized in that, Each silicon wafer string has multiple silicon wafers connected in series. The first unit and the second unit each have 3 silicon wafer strings. The series conductive bandwidth is 110.4 cm long, 1.5 cm wide, and 0.024 cm thick, and the overcurrent capacity is DC60A.

10. A photovoltaic system, characterized in that, The photovoltaic system includes the photovoltaic module as described in any one of claims 1-9.

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