Wafer annealing equipment

Abstract

The utility model provides wafer annealing equipment, which comprises a rack, a carrying table assembly arranged on the rack, a laser assembly and a CCD assembly, the carrying table assembly comprises a moving mechanism, a carrying table driven by the moving mechanism to move and a nitrogen bin covering the carrying table, a wafer is arranged on the carrying table, and a transparent lens is arranged on the nitrogen bin; the laser assembly is located above the carrying table assembly and comprises a first laser device, a second laser device, a composite lens for integrating emergent light of the first laser device and the second laser device into a beam of composite light, a first light path assembly for adjusting the direction of the composite light and a laser scanning head, and the laser scanning head is located above the transparent lens; the CCD assembly is arranged on one side of the laser scanning head and moves synchronously with the laser scanning head. Through the arrangement, on one hand, the efficiency and the uniformity of the annealing process are improved, on the other hand, the two lasers can simultaneously or respectively perform annealing treatment on the wafer, and a more flexible annealing strategy is provided.

Description

Technical Field

[0001] This utility model relates to the field of wafer fabrication technology, and in particular to a wafer annealing device. Background Technology

[0002] The wide bandgap, high thermal conductivity, high saturated electron drift velocity, and high breakdown electric field of silicon carbide (SiC) materials determine their great potential in high-temperature and high-power fields.

[0003] Current traditional SiC wafer annealing methods involve depositing a metal electrode layer on the substrate surface followed by high-temperature thermal annealing. However, this traditional high-temperature thermal annealing process has shortcomings in thinning substrates, such as: uncontrollable annealing range, easy erosion between the substrate and the deposited metal, and impact on interface morphology and material distribution uniformity. Furthermore, the process time in the wafer annealing chamber is relatively long, affecting the wafer annealing cycle. Additionally, the relatively large temperature difference during heating in the annealing chamber leads to a shorter lifespan of the heating bulb, resulting in more frequent replacement and maintenance. Poor uniformity of wafer heating also increases the risk of wafer deformation.

[0004] Therefore, it is necessary to design a wafer annealing device to solve the above problems. Utility Model Content

[0005] The purpose of this invention is to provide a wafer annealing equipment to achieve efficient and uniform annealing of wafers, while solving the problem of wafer breakage caused by uneven heating at the wafer edges.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a wafer annealing apparatus, comprising a frame, a stage assembly mounted on the frame, a laser assembly, and a CCD assembly. The stage assembly includes a moving mechanism, a stage that moves under the drive of the moving mechanism, and a nitrogen chamber covering the stage. The wafer is mounted on the stage, and a transparent lens is provided on the nitrogen chamber. The laser assembly is located above the stage assembly and is used to perform laser annealing on the wafer on the stage. The laser assembly includes a first laser, a second laser, a composite lens that integrates the emitted light from the first laser and the second laser into a composite beam, a first optical path assembly that adjusts the direction of the composite beam, and a laser scanning head located in the emission direction of the first optical path assembly. The laser scanning head is located above the transparent lens. The CCD assembly is located on one side of the laser scanning head and moves synchronously with the laser scanning head.

[0007] As a further improvement of the present invention, the laser component further includes a second optical path component, which adjusts the emitted light from the first laser to the composite lens.

[0008] As a further improvement of this utility model, the first laser is an ultraviolet laser, the second laser is an infrared laser, and the composite lens is configured to reflect ultraviolet light and transmit infrared light.

[0009] As a further improvement of the present invention, the emitted light from the first laser and the second laser is directed toward both sides of the composite lens, and the first laser is at a 45° angle to the composite lens, while the emitted light from the second laser is at a 90° angle to the emitted light from the first laser.

[0010] As a further improvement of the present invention, the first optical path assembly includes a collimating lens, a first reflecting mirror, a focusing lens and a second reflecting mirror arranged in sequence, wherein the light emitted from the second reflecting mirror enters the laser scanning head vertically.

[0011] As a further improvement of the present invention, the laser assembly further includes a vertical moving mechanism, on which a rectangular mounting box is provided. The vertical moving mechanism drives the rectangular mounting box to rise and fall. The CCD assembly is vertically disposed on the side of the rectangular mounting box, the laser scanning head is disposed below the rectangular mounting box, and the first optical path assembly is located inside the rectangular mounting box.

[0012] As a further improvement of the present invention, a real-time height measurement component is also included. The real-time height measurement component is located below the rectangular mounting box and adjacent to the laser scanning head. A displacement component is provided between the real-time height measurement component and the rectangular mounting box.

[0013] As a further improvement of the present invention, the CCD component includes a light source and a camera, with the camera located above the light source.

[0014] As a further improvement of the present invention, the moving mechanism includes an X-axis linear module and a Y-axis linear module disposed on the X-axis linear module, and the platform is disposed on the Y-axis linear module.

[0015] As can be seen from the above technical solutions, the wafer annealing equipment of this utility model has the following effects:

[0016] 1) The wafer annealing equipment of this utility model is equipped with two lasers and the two laser beams can be effectively integrated into a composite beam by means of a composite lens. On the one hand, it improves the efficiency and uniformity of the annealing process. On the other hand, the two lasers can anneal the wafer simultaneously or separately, providing a more flexible annealing strategy.

[0017] 2) By using the real-time positioning of the CCD component and adjusting the direction of the composite light through the first optical path component, the laser is ensured to accurately irradiate the wafer, which improves the real-time monitoring capability of the annealing process and further enhances the accuracy and controllability of the annealing. Precise control of the laser annealing process can reduce the thermal stress of the wafer, reduce the breakage rate, and improve the overall quality of the wafer.

[0018] 3) By setting a nitrogen chamber and a transparent lens on the stage assembly, an oxygen-free environment is provided for the annealing process, which avoids the oxidation of the wafer during the annealing process. The transparent lens allows the laser to penetrate the nitrogen chamber and directly irradiate the wafer, ensuring the annealing effect.

[0019] 4) Achieve high-precision annealing: By utilizing laser annealing technology, the uniform distribution of elements at the wafer metal-semiconductor interface can be ensured at annealing heating rates on the micro / nanosecond scale, resulting in more stable and uniform ohmic contacts than traditional high-temperature thermal annealing processes. Attached Figure Description

[0020] Figure 1 This is a perspective view of a wafer annealing apparatus according to an embodiment of the present invention.

[0021] Figure 2 for Figure 1 A magnified view of the area within the rectangular frame.

[0022] Figure 3 for Figure 1 A three-dimensional view of the vertical moving mechanism and laser assembly (partial view only). Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0024] Please refer to Figure 1 and Figure 2 As shown, this utility model provides a wafer annealing apparatus, which includes a frame 10, a stage assembly 20 mounted on the frame 10, a laser assembly 30, a CCD assembly 40, and a real-time height measurement assembly 50. The frame 10 includes a marble platform 11 and a gantry 12 mounted on the marble platform 11. The laser assembly 30, the CCD assembly 40, and the real-time height measurement assembly 50 are all mounted on the gantry 12, and the stage assembly 20 is mounted on the marble platform 11.

[0025] The stage assembly 20 includes a moving mechanism 21, a stage (not shown) that moves under the drive of the moving mechanism 21, and a nitrogen chamber 22 covering the stage. The moving mechanism 21 includes an X-axis linear module and a Y-axis linear module mounted on the X-axis linear module, with the stage mounted on the Y-axis linear module. The wafer is placed on the stage and moves horizontally under the drive of the moving mechanism 21. The nitrogen chamber 22 provides an oxygen-free environment for the wafer, preventing oxidation during the annealing process. The nitrogen chamber 22 is equipped with a transparent lens 221, allowing laser light to penetrate the nitrogen chamber and directly irradiate the wafer, ensuring effective annealing.

[0026] The laser assembly 30 is located above the stage assembly 20 and is used for laser annealing of the wafer on the stage. The laser assembly 30 includes a first laser 31, a second laser 32, a composite lens 34, a first optical path assembly 35, a second optical path assembly, a laser scanning head 36, and a vertical movement mechanism 37. The composite lens 34 integrates the emitted light from the first laser 31 and the second laser 32 into a single composite beam. Preferably, the first laser 31 is an ultraviolet laser, the second laser 32 is an infrared laser, and the composite lens 34 is configured to reflect ultraviolet light and transmit infrared light. Specifically, the emitted light from the first laser 31 and the second laser 32 is directed towards opposite sides of the composite lens 34, with the first laser 31 at a 45° angle to the composite lens 34, and the emitted light from the second laser 32 at a 90° angle to the emitted light from the first laser 31.

[0027] The second optical path assembly is disposed between the first laser 31 and the composite lens 34, and is used to adjust the emitted light from the first laser 31 to the composite lens 34. Preferably, the second optical path assembly includes a reflector 33.

[0028] The laser scanning head 36 is positioned above the transparent lens 221 to emit a scanning laser beam onto the wafer on the stage below the transparent lens 221. The laser scanning head 36 is positioned in the emission direction of the first optical path assembly 35. The first optical path assembly 35 is used to adjust the direction of the composite light. (Please refer to...) Figure 3 As shown, the first optical path assembly 35 is located on the side of the emitted light of the composite lens 34, and includes a collimating lens 351, a first reflecting mirror 352, a focusing lens 353, and a second reflecting mirror 354 arranged sequentially. The laser scanning head 36 is located below the second reflecting mirror 354, and the emitted light from the second reflecting mirror 354 enters the laser scanning head 36 vertically.

[0029] The vertical movement mechanism 37 is used to drive the laser component 30, CCD component 40, and real-time height measurement component 50 to move vertically synchronously, so as to accurately adjust the working height of the laser scanning head. Specifically, the vertical movement mechanism 37 includes a vertical motor 371, a transmission mechanism, and a vertical movement plate. A fixed plate 13 is provided on the gantry 12, and the vertical motor 371 is fixed on the fixed plate 13. A rectangular mounting box 373 is provided on the vertical movement plate, and the vertical movement mechanism 37 drives the rectangular mounting box 373 to rise and fall. The laser scanning head 36 is located below the rectangular mounting box 373, and the first optical path component 35 is located inside the rectangular mounting box 373. The top plate of the rectangular mounting box 373 has a light-transmitting port for the composite light to pass through, and the bottom plate of the rectangular mounting box 373 also has a light-transmitting port for the emitted light of the first optical path component 35 to pass through and enter the laser scanning head 36.

[0030] The CCD assembly 40 is located on one side of the laser scanning head 36 and moves synchronously with the laser scanning head 36. Specifically, the CCD assembly 40 is vertically mounted on the side of the rectangular mounting box 373 near the laser scanning head 36. The CCD assembly includes a light source and a camera, with the camera located above the light source.

[0031] The real-time height measurement component 50 is used to monitor the height of the laser scanning head 36 in real time. The real-time height measurement component 50 is located below the rectangular mounting box 373 and adjacent to the laser scanning head 3. Specifically, the real-time height measurement component 50 includes a mounting plate 51 on the bottom plate of the rectangular mounting box 373, a displacement component 52 on the mounting plate 51, and a height measuring instrument 53 on the displacement component 52.

[0032] The terms used herein, such as "upper" and "lower," indicating spatial relative position, are for illustrative purposes to describe the relationship of one feature relative to another, as shown in the accompanying drawings. It is understood that, depending on the product's placement, these terms may be intended to include different orientations besides those shown in the figures, and should not be construed as limiting the claims.

[0033] Furthermore, the above embodiments are only used to illustrate the present utility model and are not intended to limit the technical solutions described in the present utility model. The understanding of this specification should be based on those skilled in the art. Although the present utility model has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still make modifications or equivalent substitutions to the present utility model. All technical solutions and improvements that do not depart from the spirit and scope of the present utility model should be covered within the scope of the claims of the present utility model.

Claims

1. A wafer annealing apparatus, characterized in that: The system includes a frame, a stage assembly mounted on the frame, a laser assembly, and a CCD assembly. The stage assembly includes a moving mechanism, a stage that moves under the drive of the moving mechanism, and a nitrogen chamber covering the stage. The wafer is placed on the stage, and a transparent lens is provided on the nitrogen chamber. The laser assembly is located above the stage assembly and is used to perform laser annealing on the wafer on the stage. The laser assembly includes a first laser, a second laser, a composite lens that integrates the emitted light from the first laser and the second laser into a composite beam, a first optical path assembly that adjusts the direction of the composite beam, and a laser scanning head located in the emission direction of the first optical path assembly. The laser scanning head is located above the transparent lens. The CCD assembly is located on one side of the laser scanning head and moves synchronously with the laser scanning head.

2. The wafer annealing equipment as described in claim 1, characterized in that: The laser assembly further includes a second optical path assembly, which adjusts the emitted light from the first laser to the composite lens.

3. The wafer annealing equipment as described in claim 1, characterized in that: The first laser is an ultraviolet laser, the second laser is an infrared laser, and the composite lens is configured to reflect ultraviolet light and transmit infrared light.

4. The wafer annealing equipment as described in claim 3, characterized in that: The emitted light from the first laser and the second laser is directed toward both sides of the composite lens, with the first laser at a 45° angle to the composite lens and the emitted light from the second laser at a 90° angle to the emitted light from the first laser.

5. The wafer annealing equipment as described in claim 1, characterized in that: The first optical path assembly includes a collimating lens, a first reflecting mirror, a focusing lens, and a second reflecting mirror arranged in sequence, with the light emitted from the second reflecting mirror entering the laser scanning head vertically.

6. The wafer annealing equipment as described in claim 1, characterized in that: The laser assembly also includes a vertical moving mechanism with a rectangular mounting box on it. The vertical moving mechanism drives the rectangular mounting box to rise and fall. The CCD assembly is vertically mounted on the side of the rectangular mounting box, the laser scanning head is located below the rectangular mounting box, and the first optical path assembly is located inside the rectangular mounting box.

7. The wafer annealing equipment as described in claim 6, characterized in that: It also includes a real-time height measurement component, which is located below the rectangular mounting box and adjacent to the laser scanning head, and a displacement component is provided between the real-time height measurement component and the rectangular mounting box.

8. The wafer annealing equipment as described in claim 1, characterized in that: The CCD component includes a light source and a camera, with the camera located above the light source.

9. The wafer annealing equipment as described in claim 1, characterized in that: The moving mechanism includes an X-axis linear module and a Y-axis linear module disposed on the X-axis linear module, and the platform is disposed on the Y-axis linear module.

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