Bearing device and gas phase reaction device

Abstract

The utility model provides a bearing device and a gas phase reaction device, the bearing device is provided with a plurality of recesses for bearing substrates, the edge parts of the recesses are provided with arc-shaped grooves, when the substrates are placed on the bearing surfaces of the recesses, part of the edge parts of the substrates are suspended above the arc-shaped grooves; the adverse effect of overheating of the side wall of the recess on the edge part of the substrate can be reduced. The concave cavities in the same circumferential direction form at least two concave cavity sets, the edge bearing faces of the concave cavities are arranged in the same rotating direction, and in the adjacent concave cavities of the same concave cavity set, the arc-shaped groove of one concave cavity is located between the inner bearing face of the concave cavity and the edge bearing face of the other concave cavity, and the arc-shaped groove of the other concave cavity is located between the inner bearing face of the concave cavity and the edge bearing face of the other concave cavity. The duty ratio of each recess group is 50%-75%, and the area of a non-bearing surface near the recesses 100 can be compressed to a certain extent, so that the adverse effect of process gas heated by the bearing device on the temperature uniformity of the substrate is reduced to the maximum extent.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device and apparatus technology, and in particular to a carrier device and a gas phase reaction device. Background Technology

[0002] The reaction chamber is a crucial chamber in semiconductor device manufacturing processes. In gas-phase reaction apparatus, the reaction chamber is where the reactants are introduced by gas and a flow field is established. For example, in a reaction chamber for material growth via gas-phase reaction, the transport of the gas source material and the removal of byproducts after the growth reaction are accomplished through the flow field established by the carrier gas and reactant gas together.

[0003] For reaction chambers used in vapor-phase material growth, controlling the temperature field within the chamber is a crucial factor affecting the vapor-phase reaction. To increase throughput, multiple large-size substrates (e.g., 8-inch, 12-inch) are typically laid flat within the reaction chamber for simultaneous deposition, thus requiring a sufficiently large reaction chamber volume. The larger the chamber volume, the more difficult it becomes to maintain the required temperature for a hot-wall reaction chamber, which negatively impacts the uniformity of the grown epitaxial layer and the quality of the single-crystal thin film. This results in reduced epitaxial growth yield and decreased production efficiency.

[0004] For semiconductor films requiring high film quality, such as InGaAsP epitaxial wafers, temperature dependence is strong, necessitating precise temperature control to ensure the quality of the epitaxial film. Furthermore, minute differences in gas flow and temperature at different locations on the wafer surface can lead to variations in the characteristics of the resulting semiconductor wafers, resulting in defective products. Utility Model Content

[0005] In view of the above-mentioned defects in the existing gas phase reaction device, the present invention provides a support device and a gas phase reaction device to solve one or more of the above problems.

[0006] To achieve the above objectives, a first aspect of this utility model provides a support device, comprising a plurality of support areas and a non-support area located between the support areas.

[0007] The bearing area includes a plurality of recesses opened on the top surface of the bearing device. Each of the recesses in the same circumference forms a recess group. The number of recess groups is at least 2. Each recess includes an internal bearing surface and an edge bearing surface that are flush with and connected to each other on the top surface.

[0008] An arc-shaped groove is formed on the edge of each of the recesses and surrounds the inner bearing surface. The edge bearing surface is located between the two ends of the arc-shaped groove so that the placed substrate is supported by the inner bearing surface and the edge bearing surface, and a portion of the edge of the substrate is suspended above the arc-shaped groove.

[0009] The bearing surfaces of the edges of each of the aforementioned recesses are arranged around the same direction of rotation;

[0010] In adjacent recesses of the same recess group, the arc-shaped groove of one recess is located between the inner bearing surface of the recess and the edge bearing surface of the other recess;

[0011] The duty cycle of each of the aforementioned cavity groups is 50% to 75%.

[0012] Optionally, the center of the arc-shaped groove coincides with the center of the recess, and the width of the fan-shaped annular groove does not exceed 10% of the radial length of the area enclosed by the bottom edge of the recess.

[0013] Optionally, the arc-shaped groove is formed as a fan-shaped annular groove.

[0014] Optionally, the top opening of the arc-shaped groove includes a first end and a second end opposite to each other, and the first acute angle α between the first end and the second end and the center of the recess where the arc-shaped groove is located is 85° to 95°, and the line connecting the second end and the center of the recess where the arc-shaped groove is located is the second line.

[0015] Optionally, the second end is closer to the rotation center of the bearing device than the first end, and the angle β between the third line connecting the rotation center of the bearing device and the center of the recess where the arcuate groove is located and the second line is 40° to 70°.

[0016] Optionally, the duty cycle of the recess group closest to the center of the bearing device is 50% to 55%, and the duty cycle of the recess group farthest from the center of the bearing device does not exceed 75%.

[0017] Optionally, the bearing device further includes a plurality of recessed hole structures disposed on the inner bearing surface of the recess, wherein the sum of the opening areas of each recessed hole structure is less than the opening area of ​​the arc-shaped groove.

[0018] Optionally, the top surface of the bearing device includes a non-bearing surface surrounding the recess, and the non-bearing surface and the sidewall of the recess are chamfered surfaces. The chamfered surface is covered with a thermally conductive coating, and the thermal conductivity of the thermally conductive coating is lower than that of the non-bearing surface.

[0019] Optionally, the sidewall formed between the top surface of the inner bearing surface and the bottom surface of the arcuate groove is inclined to the top surface of the inner bearing surface, so that the top outer diameter of the structure enclosed by the inner bearing surface and the sidewall is smaller than the bottom outer diameter.

[0020] A second aspect of this utility model provides a gas-phase reaction apparatus, comprising:

[0021] Reaction chamber;

[0022] A support device is disposed in the reaction chamber, and the support device is the support device provided in this application;

[0023] A rotary drive device is dynamically sealed in the reaction chamber and rotatably connected to the support device to drive the support device to rotate;

[0024] A gas injection mechanism is disposed opposite to the side of the support device that has a recess, so as to eject process gas toward the support device.

[0025] As described above, the support device and gas-phase reaction device of this utility model have the following beneficial effects:

[0026] The bearing device of this utility model is provided with a plurality of recesses for supporting the substrate. The edges of the recesses are provided with arc-shaped grooves. When the substrate is placed on the bearing surface of the recess, part of the substrate's edge is suspended above the arc-shaped groove, which can reduce the adverse effect of the recess sidewall on the substrate edge temperature overheating. Recesses in the same circumferential direction constitute a recess group, and the number of recess groups is at least two. The bearing surfaces of the edges of each recess are arranged in the same direction of rotation. In adjacent recesses within the same recess group, the arc-shaped groove of one recess is located between the inner bearing surface of that recess and the edge bearing surface of another recess. The duty cycle of each recess group is 50% to 75%, which can compress the area of ​​the non-bearing surface near the recess 100 to a certain extent, thereby minimizing the adverse effect of the process gas heated by the bearing device on the temperature uniformity of the substrate. Attached Figure Description

[0027] Figure 1 The diagram shown is a front sectional view of the support device provided by this utility model.

[0028] Figure 2 Displayed as Figure 1 A top view of the load-bearing device.

[0029] Figure 3 Displayed as Figure 2 A top view of the concave structure.

[0030] Figure 4 Displayed as Figure 2 A top view of the structure of the first concave group in the middle.

[0031] Figure 5 Displayed as Figure 3 Schematic diagram of the cross-sectional structure along the AA direction.

[0032] Figure 6 Shown as an optional embodiment Figure 5 A magnified schematic diagram of part B in the middle section.

[0033] Figure 7 Shown as another optional embodiment Figure 5 A magnified schematic diagram of part B in the middle section.

[0034] Figure 8 The cavity shown is corresponding to a vapor phase growth apparatus provided in another alternative embodiment. Figure 5 A magnified schematic diagram of part B in the middle section.

[0035] Figure 9 The image shows the surface fluorescence excitation spectrum of the substrate measured under predetermined process conditions when the top of the recess is flat and without grooves.

[0036] Figure 10 When displayed as an arc-shaped groove on the edge of the recess, in conjunction with Figure 9 The surface fluorescence excitation spectrum of the substrate measured under the same process conditions.

[0037] Figure 11 When displayed as an annular groove on the edge of the recess, in conjunction with Figure 9 The surface fluorescence excitation spectrum of the substrate measured under the same process conditions.

[0038] Figure 12 The diagram shown is a structural schematic of a recess provided in one embodiment of the present invention.

[0039] Component designation explanation

[0040] 1. Bearing device; 11. Top surface; 12. Bottom surface; 100. Recess; 100-1. First recess; 100-2. Second recess; 100-3. Third recess; 101. First recess group; 102. Second recess group; 1.3. Non-bearing surface; 111. Internal bearing surface; 1110. Recess; 112. Edge bearing surface; 113. Arc groove; 1131. First end; 1132. Second end; 114. Side wall; 114′. Stepped side wall; 114″. Outwardly convex arc side wall; 115. Chamfered surface; 116. Thermally conductive coating; 200. Substrate; 2. Heating device; 3. Rotary drive device; 4. Gas injection mechanism; 5. Reaction chamber. Detailed Implementation

[0041] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0042] This embodiment provides a vapor phase growth apparatus, which can be, for example, a vapor phase deposition apparatus, specifically a chemical vapor deposition (CVD) apparatus or a physical vapor deposition (PVD) apparatus. The vapor phase deposition apparatus 10 can be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc. This embodiment uses an MOCVD apparatus as an example for illustration. It should be understood that this apparatus is merely exemplary, and this invention is not limited to this type of apparatus.

[0043] like Figure 1 As shown, the vapor phase growth apparatus of this invention has a reaction chamber 5, within which a support device 1 for supporting a substrate 200 is disposed. The reaction chamber 5 is also provided with a gas injection device for supplying process gas into the reaction chamber 5. This gas injection device is disposed opposite to the support device 1; specifically, the outlet side of the gas injection device is disposed opposite to the top surface 11 of the support device 1 for supporting the substrate 200. A heating device 2 is also disposed on the bottom surface 12 of the support device 1, capable of heating the support device 1 and, through heat transfer, heating the substrate 200 it supports. Figure 1 As shown, the vapor phase growth equipment of this utility model also includes a rotary drive device 3, which is installed in the reaction chamber 5 in a dynamic sealing manner and is fixedly connected to the middle of the support device 1 to drive the support device 1 to rotate around the rotation axis T2 during the vapor phase reaction.

[0044] The cross-section of the reaction chamber 5 in the vapor phase growth apparatus is generally circular or near-circular, or it can be rectangular or other structures known to those skilled in the art, which will not be elaborated here. The reaction chamber 5 is a vertical flow chamber with vertically inlet gas. The reaction chamber 5 can be an upright chamber where the gas injection mechanism 4 is positioned opposite the support device 1, with the gas injection mechanism 4 located at the top and the support device 1 at the bottom. This embodiment uses... Figure 1 The gas injection mechanism 4 is described using an example of a vertical flow chamber with a circular cross-section, where the gas injection mechanism 4 is located at the top and the support device 1 is located at the bottom.

[0045] Reference Figure 1 and Figure 2A gas injection mechanism 4 for supporting the substrate 200 to be processed is provided in the reaction chamber 5 and is disposed opposite to the support device 1, for example, at the top of the reaction chamber 5, to inject gas into the reaction chamber 5. The support device 1 is located below the gas injection mechanism 4. The gas injection mechanism 4 provided in this embodiment has an overall disc-shaped structure, wherein the gas outlet surface of the gas injection mechanism 4 faces the support device 1.

[0046] Similarly, refer to Figure 1 As shown, a main axis T1 is defined. The main axis T1 is perpendicular to the gas outlet surface of the disc-shaped gas injection mechanism 4 and passes through the geometric center of the gas outlet surface of the gas injection mechanism 4. The main axis T1 can be parallel to or not parallel to the rotation axis T2 of the bearing device 1. Preferably, the main axis T1 is parallel to the rotation axis T2 of the bearing device 1 (i.e., the central axis of the top surface of the bearing device 1). Preferably, the main axis T1 coincides with the rotation axis T2.

[0047] The top surface 11 of the support device 1 has a plurality of recesses 100, which are recessed from the top surface 11 to the bottom surface 12. The size and number of the recesses 100, as well as their distribution on the support device 1, can be designed according to the size, thickness, and number of the substrate 200 that needs to be supported and held, and the size of the support device 1. For a substrate 200 that is usually disc-shaped, the recesses 100 are designed with circular openings, and the opening size corresponds to the size of the substrate 200.

[0048] In an optional embodiment, a plurality of recesses 100 are formed on the top surface 11 of the support device 1 along the same circumferential direction, and the plurality of recesses 100 in this circumferential direction form a recess group. N recess groups, such as 2, 3, or more, are formed on the top surface 11 of the same support device 1 from the inside out along different circumferential directions at the rotation center of the support device 1. Each recess group includes a plurality of recesses 100, and more specifically, each recess group contains at least 3 recesses 100. The geometric centers of the plurality of recesses 100 in the same recess group are located on the same circumference of the top surface 11 of the support device 1.

[0049] In an optional embodiment, among adjacent recess groups, the number of recesses 100 in the inner ring recess group closer to the center of the bearing device 1 is less than the number of recesses 100 in the outer ring recess group farther from the center of the bearing device 1.

[0050] In an optional embodiment, in the same set of recesses, several recesses 100 are evenly arranged along the rotation axis T2 of the bearing device 1, that is, the interval between adjacent recesses 100 is the same.

[0051] Example 1

[0052] In this embodiment of the vapor phase growth apparatus, the top surface 11 of the support device 1 has two sets of recesses as an example for explanation. Figure 2 A top view of the support device 1 in this embodiment is shown. It should be understood that in this utility model, "looking down" refers to the view direction from the bottom surface 12 to the top surface 11 of the support device 1, and "looking up" refers to the view direction from the top surface 11 to the bottom surface 12 of the support device 1.

[0053] like Figure 2 As shown, in this embodiment, a first set of recesses 101 and a second set of recesses 102 are formed on the top surface 11 of the support device 1 along two different circumferences, a first circumference C1 and a second circumference C2. The diameter of the first circumference C1 is smaller than the diameter of the second circumference C2, that is, the first set of recesses 101 is closer to the rotation center O of the support device 1. The first set of recesses 101 contains 3 recesses 100, and the second set of recesses 102 contains 9 recesses 100.

[0054] In optional embodiments, such as Figure 2 As shown, the first recess group 101, located near the rotation center O of the support device 1, has a first recess 100-1. The second recess group 102, located away from the rotation center O of the support device 1, has a second recess 100-2 and a third recess 100-3. The second recess 100-2 and the third recess 100-3 are adjacent to each other and to the first recess 100-1. The extension of the line connecting the rotation center O of the support device 1 and the center O' of the first recess 100-1 passes between the second recess 100-2 and the third recess 100-3. This results in the recesses 100 in the inner and outer recess groups being staggered, which optimizes the distribution of the recesses 100 on the support device 1 and achieves the optimization of the bearing area of ​​the top surface 11 of the support device 1.

[0055] In this embodiment, the cavity group and duty cycle are defined, such as... Figure 2 As shown, taking the second set of recesses 102 (i.e., the outer ring set of recesses) as an example, the multiple recesses 100 in this set of recesses are distributed in the middle of two tangent circles, i.e. Figure 2The area of ​​the annulus between the third circumference C3 and the fourth circumference C4 is S. The area of ​​the top opening of each recess 100 in the second recess group 102 is S1. The ratio of the sum of the top opening areas S1 of each recess 100 to the area S of the annulus is the duty cycle of the second recess group 102. In an optional embodiment, the top surface 11 of the bearing device 1 is defined to have N recess groups. When N is less than or equal to 3, the duty cycle of the inner recess group closer to the center O of the bearing device 1 is less than the duty cycle of the outer recess group farther from the center O of the bearing device 1. When N is greater than 3, the duty cycles of adjacent recess groups from the 3rd to the Nth recess group are the same. In a further optional embodiment, the duty cycle of the recess group closest to the center of the bearing device 1 is 50% to 55%, and the duty cycle of the recess group farthest from the center of the bearing device 1 does not exceed 75%. For example, in some specific embodiments, the substrate 200 can be 2 inches or 3 inches in size, and the diameter of the support device 1 can be 380 millimeters. The opening diameter of each recess 100 can be slightly larger than 2 inches or slightly larger than 3 inches, or two sizes of recesses 100 can be simultaneously formed on the same support device 1. Taking the arrangement of two recess groups as an example, the inner recess group has 3 recesses 100, and the outer recess group has 9 recesses 100.

[0056] To ensure efficient heat transfer to the substrate 200, the support device 1 is made of a material with high thermal conductivity, such as graphite. Under process conditions, the rotary drive device 3 drives the support device 1 to rotate around its central axis. Process gas injected above the substrate 200 is dragged by the rotation of the support device 1, forming a rotating airflow. Due to the difference in thermal conductivity between the substrate 200 and the support device 1, and influenced by convection and radiation from the gas and temperature fields in the process environment, the temperature of the support device 1 is higher than that of the substrate 200. The process gas flows along the incoming flow direction over the non-supporting surface of the support device 1 that does not support the substrate 200 and is heated. As it flows past nearby substrates 200, it has a certain heating effect on those substrates 200, and this heating effect weakens along the incoming flow direction, thus exacerbating the temperature non-uniformity of the substrate 200. The duty cycle of each cavity group is increased, that is, the duty cycle of the cavity group closest to the center of the bearing device 1 is 50% to 55%, and the duty cycle of the cavity group farthest from the center of the bearing device 1 does not exceed 75%, thereby compressing the area of ​​the non-bearing surface near the cavity 100 to minimize the adverse effect of the process gas heated by the bearing device 1 on the temperature uniformity of the substrate.

[0057] In this embodiment of the invention, the flow direction of the rotating airflow formed by the process gas is opposite to the rotation direction of the supporting device 1.

[0058] In some specific embodiments, such as the MOCVD equipment for growing quaternary InGaAsP, the rotation speed of the carrier device 1 is controlled at greater than or equal to 500 rpm, and the process temperature is above 600°C, such as 750°C or 1000°C.

[0059] When the substrate 200 is placed in the recess 100, the gap between the edge of the substrate 200 and the edge of the recess 100 is very small. The sidewall of the recess 100 will conduct heat transfer to the substrate 200. This heat transfer will cause the temperature at the edge of the substrate 200 to be significantly higher than the temperature in the middle. Especially under the centrifugal force of the rotating support device 1 driven by the rotating drive device 3, especially under the centrifugal force of high-speed rotation as described above, some sidewalls of the substrate 200 will be closer to or even adhere to the sidewall of the recess 100, and the above-mentioned temperature effect will be more significant. Specifically, an InP substrate is placed on a recess with a flat bottom and no grooves. Film is formed on the substrate under the process conditions of a process temperature of 650°C, a rotation speed of 500 rpm, a trimethylgallium flow rate of 80 sccm, an arsine flow rate of 50 sccm, a phosphine flow rate of 1000 sccm, and a trimethylindium flow rate of 800 sccm. The temperature of the film formed on the substrate is measured using a photoluminescence meter. Figure 9 The surface fluorescence excitation spectrum shown is illustrated. In this spectrum, the red area represents the long-wavelength region, and the blue area represents the short-wavelength region. The shorter the wavelength, the higher the temperature of the substrate surface. It is evident that there is a significant temperature difference between the edge and the center of the substrate on the flat, ungrooved recess, indicating poor temperature uniformity. To reduce the temperature difference between the edge and center of the substrate 200, the recess 100 in this embodiment has an arc-shaped groove 113 at its edge. This reduces the contact area between the edge of the substrate 200 and the recess 100, weakening the influence of heat transfer from the sidewall of the recess 100 on the edge temperature of the substrate 200. Figure 9 Under the same process conditions, the measured surface fluorescence excitation spectrum is as follows: Figure 10 As shown. By Figure 10 It can be seen that when the recess 100 has an arc-shaped groove 113 at the edge, the standard deviation of the substrate surface temperature Std Dev value in the recess 100 decreases significantly.

[0060] like Figure 2 and Figure 3 As shown, in this embodiment, the recess 100 includes an inner bearing surface 111 and an edge bearing surface 112 that are flush with and connected to each other on the top surface. An arc-shaped groove 113 is formed on the edge of the recess 100 from the top surface downwards, surrounding the inner bearing surface 111. The edge bearing surface 112 is located between the two ends of the arc-shaped groove 113. Optionally, the edge bearing surfaces 112 of each recess 100 are arranged around the same direction of rotation. In adjacent recesses 100 of the same recess group, the arc-shaped groove 113 of one recess 100 is located between the inner bearing surface 111 of that recess 100 and the edge bearing surface 112 of another recess 100. For example... Figure 2The arc-shaped groove 113 of the second recess 100-2 shown is located between the inner bearing surface 111 of the second recess 100-2 and the edge bearing surface 112 of the third recess 100-3. For example... Figure 2 and Figure 3 As shown, in this embodiment, the opening of the arc-shaped groove 113 in the recess 100 is a fan-shaped annulus (i.e., part of a circular annulus), and the center of the fan-shaped annulus coincides with the center O′ of the recess 100. Further, as... Figure 3 As shown, the top opening of the arc-shaped groove 113 includes a first end 1131 and a second end 1132 opposite to each other. The first acute angle α formed by the first line L1 connecting the first end 1131 and the center O′ of the recess 100 and the second line L2 connecting the second end 1132 and the center O′ of the recess 100 is 85° to 95°. This angle setting ensures the proportion of the arc-shaped groove 113 and the edge bearing surface 112, and ensures the uniformity of heat transfer from the recess 100 to the temperature of the substrate 200.

[0061] In optional embodiments, such as Figure 4 As shown, taking the inner ring recess group as an example, the second end 1132 of the arc groove 113 is closer to the rotation center O of the bearing device 1 than the first end 1131. The line connecting the rotation center O of the bearing device 1 and the center O′ of the recess 100 where the arc groove 113 is located forms a third line L3, and the angle β between the third line L3 and the aforementioned second line L2 is 40° to 70°.

[0062] In a further optional embodiment, the number of recesses on the top surface 11 of the support device 1 is at least 2 and they are arranged sequentially from the inside to the outside around the rotation center O of the support device 1. The aforementioned angle β of each recess 100 in the same recess group is consistent, and the first acute angle a is consistent.

[0063] In adjacent recess groups, the angle β of each recess 100 in the inner ring recess group closest to the rotation center O of the support device 1 is smaller than the angle β of each recess 100 in the outer ring recess group furthest from the rotation center O of the support device 1; in the recess group closest to the rotation center O of the support device 1, the included angle β of each recess 100 is 40° to 50°. The setting of the above-mentioned angle β restricts the position of the arc groove (i.e., the edge support surface) in each recess 100 relative to the rotation center O of the support device 1, ensuring that the arc groove is located on the windward side (high temperature side) of the process gas flow direction; at the same time, it also ensures the proportion of the arc groove 113 and the edge support surface 112, ensuring the uniformity of heat transfer from the recess 100 to the substrate 200 temperature.

[0064] When the substrate 200 is placed in the recess 100, it is supported by the internal bearing surface 111 and the edge bearing surface 112 of the recess 100, and part of the edge of the substrate 200 at the position of the arc groove 113 is suspended above the arc groove 113. During the vapor phase growth process, the rotary drive device 3 drives the bearing device 1 to rotate, and the area where the edge bearing surface 112 of each recess 100 is located faces away from the direction of the process gas flow (i.e., the flow direction is from the position of the arc groove 113 to the position of the edge bearing surface 112). The gas flow entering the reaction chamber 5 is heated by the surface of the bearing device 1. Due to the difference in thermal conductivity between the substrate 200 and the bearing device 1, the temperature of the substrate 200 is lower than that of the bearing device 1. The heating effect of the process gas flow on the substrate 200 is reduced as it flows through the substrate 200, resulting in a significant temperature difference between the area of ​​the substrate 200 away from the arc groove 113 and the area near the arc groove 113. Figure 11 As shown, the recess 100 has an annular groove, the width of which is designed to be the same as the width of the arc-shaped groove 113. In conjunction with... Figure 9 Under the same process conditions, the measured surface fluorescence excitation spectrum is as follows: Figure 11 As shown. By Figure 11 It can be seen that when the recess 100 has an arc-shaped groove 113 at its edge, the standard deviation of the substrate surface temperature Std Dev in the recess 100 is higher than that of the recess 100. Figure 10 The Std Dev value indicates that the temperature field distribution uniformity of the substrate is lower than that of the substrate. Figure 10 The substrate shown exhibits uniform temperature. Therefore, as described above, the leeward side of the recess 100 is not grooved, while an arc-shaped groove 113 is formed on the windward side of the recess 100. Correspondingly, the substrate 200 in the corresponding leeward area is supported by both the internal bearing surface 111 and the edge bearing surface 112 of the recess 100. Thus, heat transfer from the sidewall of the recess 100 on the leeward side can be used to compensate for the temperature of the substrate 200, thereby reducing the temperature difference between the middle and edge of the substrate 200, as well as between the windward and leeward sides.

[0065] In an optional embodiment, within the same cavity group, each cavity 100 is uniformly arranged around the rotation axis T2 of the supporting device 1, and each cavity 100 has the same structure, as do the arc-shaped grooves 113 of each cavity 100. In an optional embodiment, among adjacent cavities 100 in the same cavity group, the opening of the arc-shaped groove 113 of one cavity 100 is located at a first position relative to the gas injection device, and the opening of the arc-shaped groove 113 of another cavity 100 is located at a second position relative to the gas injection device. Specifically, taking a disc-shaped gas injection device as an example, in... Figure 1As shown in the top-down view, the first and second positions are two adjacent positions on the same circumference of the projection of the gas injection device. Furthermore, the first and second positions cover two adjacent recesses 100 in the same recess group on the top surface 11 of the support device 1. During the rotation of the support device 1 driven by the rotary drive device 3, the position of the arcuate groove 113 of one recess 100 relative to the gas injection device shifts from the first position to the second position. (Refer to...) Figure 2 For example, the arc groove 113 of the second recess 100-2 in the second recess group 102 is located in the first position, and the arc groove 113 of the third recess 100-3 is located in the second position. When the rotation drive device 3 drives the bearing device 1 to rotate, at a certain moment, the arc groove 113 of the second recess 100-2 is transferred to the second position.

[0066] In an optional embodiment, the radial width of the top opening of the arc groove 113 (i.e., the difference in radial distance between the inner and outer arc lines of the arc groove 113) does not exceed 10% of the radial length of the area enclosed by the bottom edge of the recess 100. For example, for a recess 100 that holds a 2-inch or 3-inch wafer, the maximum radial width of the top opening of the arc groove 113 is 7 mm. If the radial width of the top opening of the arc groove 113 is too large, the area of ​​the bonding surface used to support the wafer is reduced, and the portion that directly contacts the substrate 200 for heat transfer is reduced, which is detrimental to temperature uniformity.

[0067] Example 2

[0068] This embodiment also provides a vapor phase growth device. In this embodiment, such as... Figure 5 As shown, the sidewall 114 formed between the top surface of the inner bearing surface 111 of the recess 100 and the bottom surface of the arc-shaped groove 113 is inclined to the top surface of the inner bearing surface 111, thereby making the top outer diameter R1 of the structure enclosed by the inner bearing surface 111 and the sidewall 114 smaller than the bottom outer diameter R1. Since the airflow is heated to a higher temperature when it flows through the non-bearing surface, the process of flowing through the substrate aggravates the temperature non-uniformity of the substrate (for a detailed analysis of the reasons, please refer to the relevant analysis in Embodiment 1). The inclined sidewall 114 can compensate for the heat transfer temperature field of the top surface of the substrate 200 by the sidewall 114 of the recess and the bottom of the recess 100, which is beneficial to the temperature uniformity of the substrate 200.

[0069] In an alternative embodiment, such as Figure 6 As shown, the sidewall formed between the top surface of the internal bearing surface 111 and the bottom surface of the arc-shaped groove 113 is a stepped sidewall 114'. For example, it may include two or more steps. Figure 6 As shown, in this embodiment, the stepped sidewall 114' includes three steps. The height of each step can be the same or different, and the width of each step in the radial direction of the recess 100 can be the same or different.

[0070] In some alternative embodiments, the step height increases sequentially along the edge of the recess 100 toward the center, with the incremental trend decreasing sequentially, and the step becoming more gradual closer to the center of the recess 100.

[0071] In another alternative embodiment, such as Figure 7 As shown, the sidewall formed between the top surface of the inner bearing surface 111 and the bottom surface of the arc groove 113 is an arc-shaped sidewall. Further, the arc-shaped sidewall is an outwardly convex arc-shaped sidewall 114 that protrudes from the inner bearing surface 111 toward the arc groove.

[0072] Example 3

[0073] This embodiment also provides a vapor phase growth device. In this embodiment, such as... Figure 8 As shown, the top surface 11 of the supporting device 1 surrounds the recess 100 as a non-supporting surface 103. A chamfered surface 115 is formed between the non-supporting surface 103 and the sidewall of the recess 100. The height of this chamfered surface 115 is not less than the height of the substrate 200 supported in the recess 100. This chamfered surface 115 can be, for example, an arcuate surface or a similar bevel. Meanwhile, as... Figure 8 As shown, the height H of the chamfered surface 115 relative to the top surface of the substrate 200 does not exceed 5% of the depth D of the arcuate groove 113. In an alternative embodiment, the height H of the chamfered surface 115 relative to the top surface of the substrate 200 is within 5% (1 ± 30%) of the depth D of the arcuate groove 113. In one example, for instance, the depth D of the arcuate groove 113 is 675 micrometers, and the height H of the chamfered surface 115 relative to the top surface of the substrate 200 is 25 micrometers.

[0074] In further alternative embodiments, such as Figure 8 As shown, the chamfered surface 115 is covered with a thermally conductive coating 116, which has a lower thermal conductivity than the non-supporting surface 103, thereby appropriately reducing heat transfer from the support device 1 to the edge of the substrate 200 inside the recess 100.

[0075] In another optional embodiment, the inner wall of the arcuate groove 113 connecting the non-bearing surface is also covered with a thermally conductive coating 116, further, as... Figure 8 The inner wall and chamfered surface 115 of the arc-shaped groove 113 shown are both covered with a thermally conductive layer, and the thermally conductive layer forms a continuous structure on the inner wall and chamfered surface 115. The thermal conductivity of the thermally conductive coating 116 is lower than that of the non-load-bearing surface 103, which can appropriately reduce the heat transfer from the non-load-bearing surface of the support device 1 to the edge of the substrate 200 inside the recess 100, which is beneficial to the temperature uniformity of the substrate 200.

[0076] Example 4

[0077] This embodiment also provides a support device for a gas-phase reaction apparatus, which is disposed in the reaction chamber of the gas-phase reaction apparatus and used to support the substrate for which a thin film is to be deposited. In this embodiment, the top surface of the support device also has several recesses. The similarities between this support device and the support devices provided in the above embodiments will not be repeated, but the differences are as follows:

[0078] like Figure 12 As shown, in this embodiment, the inner bearing surface 111 of the recess 100 has a recessed portion 1110, which is formed from the center 111 of the recess 100 downwards. In order to ensure that the bearing area 100 provides sufficient support and heat conduction for the substrate 200, the recessed portion 1110 is preferably formed as a plurality of concave hole structures, and the sum of the opening areas of the concave hole structures is less than the surface area of ​​the inner bearing surface 111 of the recess 100.

[0079] In one optional embodiment of this example, a plurality of recessed hole structures are distributed on at least one circumference of the inner bearing surface 11 of the recess 100. In another optional embodiment, such as... Figure 12 As shown, a recessed hole structure is provided at the center of the recess 100, and the remaining recessed hole structures are distributed on two circumferences of the surface of the recess 100. Furthermore, the same number of recessed hole structures are distributed on each circumference, and the recessed hole structures are evenly distributed on the circumference. In another optional embodiment, the recessed hole structures are not located on three different circumferences from the middle to the edge of the inner bearing surface 111, and no recessed hole structure is provided at the center of the recess 100; the recessed hole structures are evenly distributed on the circumference. In an optional embodiment, in a recess 100, the opening area of ​​the arc-shaped groove 113 is larger than the opening area of ​​the recessed portion 1110.

[0080] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A carrier device, comprising a plurality of carrier regions and non-carrier regions between the carrier regions, wherein, the carrier regions comprise a plurality of recesses formed on a top surface of the carrier device, recesses in a same circumferential direction form a recess group, the number of the recess groups is at least two, each of the recesses comprises an inner carrier surface and an edge carrier surface which are flush and connected to each other, an arc-shaped groove is formed on an edge of each of the recesses and surrounds the inner carrier surface, the edge carrier surface is located between two ends of the arc-shaped groove, so that a substrate placed on the carrier device is supported by the inner carrier surface and the edge carrier surface, and a part of the edge of the substrate is suspended above the arc-shaped groove, the edge carrier surfaces of the recesses are arranged in a same rotation direction, the arc-shaped groove of one recess in a recess group is located between the inner carrier surface of the one recess and the edge carrier surface of another recess in the recess group, and a duty cycle of each of the recess groups is 50%-75%. The center of the arc-shaped groove coincides with the center of the recess, and the width of the arc-shaped groove is not more than 10%of the radial length of the area surrounded by the edge of the bottom surface of the recess. The arc-shaped groove is formed as a fan ring-shaped groove. The top surface opening of the arc-shaped groove comprises opposite first and second ends, the first acute angle a between the first end and the line connecting the center of the recess where the arc-shaped groove is located is 85°-95°, and the second end and the line connecting the center of the recess where the arc-shaped groove is located form a second line. The second end is closer to the rotation center of the carrier device than the first end, and the angle β between the third line connecting the rotation center of the carrier device and the second line and the arc-shaped groove is 40°-70°. The duty cycle of the recess group closest to the center of the carrier device is 50%-55%, and the duty cycle of the recess group farthest from the center of the carrier device is not more than 75%.

2. The load bearing device of claim 1, wherein, A plurality of recess structures are arranged on the inner carrier surface of the recess, and the sum of the opening areas of the recess structures is less than the opening area of the arc-shaped groove.

3. The load bearing device of claim 1, wherein, The top surface of the carrier device comprises a non-carrier surface surrounding the recess, a chamfer surface is arranged between the non-carrier surface and the side wall of the recess, the chamfer surface is covered with a heat-conducting coating, and the thermal conductivity of the heat-conducting coating is lower than that of the non-carrier surface.

4. The load bearing device of claim 1, wherein, The side wall formed between the top surface of the inner carrier surface and the bottom surface of the arc-shaped groove is inclined to the top surface of the inner carrier surface, so that the top outer diameter of the structure surrounded by the inner carrier surface and the side wall is smaller than the bottom outer diameter.

5. The load bearing device of claim 4, wherein, The carrier device comprises:

6. The load bearing device of claim 1, wherein, a reaction chamber; 7. The load bearing device of claim 1, wherein, a carrier device arranged in the reaction chamber, the carrier device being any one of the carrier devices in claims 1-9; 8. The load bearing device of claim 1, wherein, a rotary drive device arranged in the reaction chamber and rotationally connected to the carrier device to drive the carrier device to rotate; and 9. The load bearing device of claim 1, wherein, a gas injection mechanism arranged opposite to the side of the carrier device provided with the recesses to inject process gas toward the carrier device.

10. A gas phase reaction apparatus characterized by comprising: ​ ​ ​ ​ ​

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