Quartz tube structure of horizontal diffusion furnace
By employing an inner and outer tube structure in a horizontal diffusion furnace, the process gas is mixed within the interlayer cavity and uniformly distributed on the silicon wafer surface. This solves the problem of process gas non-uniformity, improves reaction uniformity and transfer efficiency, and reduces defects on the silicon wafer surface.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-20
- Publication Date
- 2026-03-06
AI Technical Summary
In existing horizontal diffusion furnaces, the process gases do not mix evenly on the silicon wafer surface, resulting in deviations in the process parameters on the silicon wafer surface, making it difficult to meet the stringent requirements of integrated circuit manufacturing.
The system employs an inner tube and an outer tube structure, forming a sandwich cavity between the inner and outer tubes. A vent hole connects the sandwich cavity and the containment cavity. After the process gas is mixed in the sandwich cavity, it enters the containment cavity through the vent hole, contacts the silicon wafer, and is circulated by an exhaust fan. A perforated plate is also provided to improve mixing efficiency.
It improves the uniformity of process gases on the silicon wafer surface, reduces process defects on the silicon wafer surface, and optimizes the flow and reaction uniformity of process gases.
Smart Images
Figure CN223974259U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing technology, and more specifically, to a quartz tube structure for a horizontal diffusion furnace. Background Technology
[0002] A semiconductor horizontal diffusion furnace is a reaction furnace used to process silicon wafers. The quartz tube serves as the reaction chamber, responsible for containing and transporting process gases.
[0003] Seen in Figure 1 In existing technologies, silicon wafers are placed inside quartz tubes. During processing, process gases are introduced through a pipe at the end of the quartz tube. However, because the distance between the introduced process gases and the silicon wafer varies, the process gases may not mix uniformly before reaching the wafer. This non-uniformity leads to deviations in the process parameters on the silicon wafer surface, making it difficult to meet the stringent requirements of integrated circuit manufacturing. Utility Model Content
[0004] This invention provides a quartz tube structure for a horizontal diffusion furnace, which can overcome some or all of the defects of the prior art.
[0005] According to the quartz tube structure of the horizontal diffusion furnace in this embodiment of the present invention, it includes a quartz tube body, a cabinet door is provided on one side of the quartz tube body along its length, the quartz tube body includes an inner tube and an outer tube, a receiving cavity is formed inside the inner tube for placing silicon wafers, an outer tube is sleeved on the outside of the inner tube, a gas supply pipe is formed at the end of the outer tube away from the cabinet door for inputting process gas, a sandwich cavity is formed between the inner tube and the outer tube, and a plurality of gas guide holes connecting the sandwich cavity and the receiving cavity are formed on the side wall of the inner tube.
[0006] In the preferred real-time configuration of this application, multiple air vents communicating with the receiving cavity are formed at the cabinet door.
[0007] In the preferred real-time mode of this application, the spacing between adjacent air guide holes is the same.
[0008] In the preferred real-time configuration of this application, an air outlet channel is formed at the cabinet door, which communicates with the receiving cavity, and an exhaust fan is provided at the air outlet channel.
[0009] In the preferred real-time mode of this application, a perforated plate is provided inside the gas transmission pipe.
[0010] Beneficial effects:
[0011] By setting up inner and outer tubes, different types of process gases can be effectively mixed in the interlayer cavity, thereby effectively improving the uniformity of process gases in contact with the silicon wafer and thus better reducing process defects on the silicon wafer surface.
[0012] By setting multiple gas guide holes on the sidewall of the inner tube, the process gas enters the containment cavity through the interlayer cavity and is evenly distributed on the silicon wafer surface, which improves the transfer efficiency and reaction uniformity.
[0013] The exhaust channel with an exhaust fan ensures good circulation of process gas within the containment chamber, allowing for timely removal of waste gas. This design not only optimizes the flow of process gas but also prevents uneven reactions caused by local gas accumulation. Attached Figure Description
[0014] Figure 1 This is a cross-sectional schematic diagram of a quartz tube structure in the background art of this application;
[0015] Figure 2 This is a cross-sectional schematic diagram of the quartz tube structure of a horizontal diffusion furnace in at least one embodiment of this application;
[0016] Figure 3 This is a cross-sectional schematic diagram of the quartz tube structure of a horizontal diffusion furnace in at least one embodiment of this application. Detailed Implementation
[0017] The accompanying drawings in this disclosure are not drawn to scale. The number of air outlets 21, air guide holes 112, exhaust fans 3, and perforated plates 4 are not limited to the quantities shown in the drawings. The specific dimensions and quantities of each structure can be determined according to actual needs. The accompanying drawings described in this disclosure are only structural schematic diagrams.
[0018] Seen in Figure 2 This embodiment provides a quartz tube structure for a horizontal diffusion furnace, which includes a quartz tube body 1. A cabinet door 2 is provided on one side of the length direction of the quartz tube body 1. The quartz tube body 1 includes an inner tube 11 and an outer tube 12. The outer tube 12 is sleeved on the outside of the inner tube 11, and a sandwich cavity 13 is formed between the inner tube 11 and the outer tube 12.
[0019] It is worth noting that, since the process gas contains a variety of different types of gases, the above-mentioned double-layer structure enables the process gas to be mixed in the interlayer cavity 13, thereby improving the uniformity of the process gas.
[0020] The inner tube 11 forms a receiving cavity 111 for placing silicon wafers. The outer tube 12 forms a gas supply pipe 121 at the end away from the cabinet door 2 for supplying process gas. The inner tube 11 has multiple gas guide holes 112 on its sidewall that connect the interlayer cavity 13 and the receiving cavity 111. Therefore, the process gas mixed in the interlayer cavity 13 can enter the receiving cavity 111 through the gas guide holes 112 and come into contact with the silicon wafer.
[0021] The above structure can effectively improve the uniformity of process gases in contact with silicon wafers, thereby better reducing process defects on the silicon wafer surface.
[0022] Furthermore, multiple vent holes 21 are formed at the cabinet door 2, which are connected to the receiving cavity 111, so as to discharge the process gas after reaction in the receiving cavity 111.
[0023] In some embodiments, the spacing between adjacent vent holes 112 is the same, thereby making the silicon wafer contact with the process gas more uniform, thus making the performance difference between silicon wafers smaller.
[0024] In some embodiments, see Figure 3 The cabinet door 2 forms an exhaust channel 22 that communicates with the housing cavity 111. An exhaust fan 3 is provided at the exhaust channel 22 to ensure that the old gas can be discharged in time after the process gas participates in the reaction through the silicon wafer. This not only avoids the local gas accumulation phenomenon, but also effectively maintains the dynamic balance of the gas in the housing cavity 111.
[0025] In some embodiments, see Figure 3 The gas pipeline 121 is equipped with a perforated plate 4, which further improves the mixing efficiency of the process gas.
[0026] It is readily understood that those skilled in the art can combine, split, or reorganize the embodiments provided in this application to obtain other embodiments, all of which do not exceed the protection scope of this application.
Claims
1. A quartz tube structure of a horizontal diffusion furnace, characterized by comprising: The quartz tube body is provided with a cabinet door on one side in the length direction, and comprises an inner layer tube and an outer layer tube.
2. The quartz tube structure of a horizontal diffusion furnace according to claim 1, wherein A plurality of gas outlet holes are formed on the cabinet door and communicated with the accommodating cavity.
3. The quartz tube structure of a horizontal diffusion furnace according to claim 1, wherein The spacing between adjacent gas guide holes is the same.
4. The quartz tube structure of a horizontal diffusion furnace according to claim 1, wherein An exhaust fan is arranged at the gas outlet passage.
5. The quartz tube structure of a horizontal diffusion furnace according to claim 1, wherein A mesh plate is arranged in the gas inlet pipe.