Target disc and ion implantation equipment
By setting conductive pins and elastic conductive supports on the target disk, stable grounding of the wafer is achieved, solving the problem of reduced working efficiency caused by spring failure, simplifying the replacement and adjustment process, and improving the working efficiency of the ion implantation equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-26
- Publication Date
- 2026-03-20
AI Technical Summary
At high temperatures, the springs on the target disk are prone to failure, leading to reduced efficiency of the ion implantation equipment and complicated spring replacement process.
The structure employs a conductive component including a conductive pin and an elastic conductive support. The conductive pin penetrates the target disk, and the elastic conductive support is located on the side of the conductive base away from the insulating functional layer. The second end of the conductive pin protrudes from the disk surface. Stable grounding of the wafer is achieved through the elastic deformation of the elastic conductive support.
It improves the grounding stability of wafers, simplifies the replacement or adjustment process of flexible conductive supports and conductive pins, and enhances the working efficiency of ion implantation equipment.
Smart Images
Figure CN224020731U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor equipment especially relates to a target disc and ion implantation equipment. BACKGROUND
[0002] Ion implantation is a technology used in the semiconductor manufacturing process to accurately introduce specific impurity atoms into a wafer. In the ion implantation process, higher requirements are placed on the wafer surface grounding to ensure the consistency of device performance across the entire wafer. To ground the wafer surface, related technologies provide a spring inside the target disc, which is connected to a conductive pin that makes contact with the wafer surface to achieve wafer surface grounding.
[0003] However, the spring is prone to failure after long-term operation at high temperatures (for example, the temperature of the target disc can reach 500°C during SiC ion implantation processes). When the spring needs to be replaced after failure, the process of replacing the spring is relatively complex because the spring is located inside the target disc, which can reduce the working efficiency of the ion implantation equipment. SUMMARY
[0004] The utility model discloses a target disc and ion implantation equipment to solve the problem of low working efficiency of ion implantation equipment in the related art.
[0005] To solve the above technical problems, the utility model is realized as follows:
[0006] In a first aspect, the utility model discloses a target disc, which comprises a disc body and a conductive assembly. The disc body is used for adsorbing a wafer, and the disc body comprises a conductive base, an insulating functional layer and an electrostatic chuck stacked in sequence along a horizontal direction. The wafer is adsorbed on the side of the electrostatic chuck away from the insulating functional layer.
[0007] The conductive assembly comprises a conductive pin and an elastic conductive bracket. The conductive pin penetrates the disc body along the horizontal direction. The elastic conductive bracket is arranged on the side of the conductive base away from the insulating functional layer. The first end of the elastic conductive bracket is fixed to the conductive base, and the second end of the elastic conductive bracket is fixed to the first end of the conductive pin. The second end of the conductive pin protrudes from the surface of the disc body.
[0008] The conductive assembly comprises a conductive pin and an elastic conductive bracket. The conductive pin penetrates the disc body along the horizontal direction. The elastic conductive bracket is arranged on the side of the conductive base away from the insulating functional layer. The first end of the elastic conductive bracket is fixed to the conductive base, and the second end of the elastic conductive bracket is fixed to the first end of the conductive pin. The second end of the conductive pin protrudes from the surface of the disc body.
[0009] In a second aspect, the utility model also discloses an ion implantation equipment, which comprises a reaction chamber and the target disc of the first aspect. The target disc is arranged in the reaction chamber.
[0010] The technical solution of the utility model can achieve the following technical effects:
[0011] The target disc disclosed by the embodiment of the application sets the conductive assembly, and sets the conductive assembly as a structure including a conductive pin and an elastic conductive support, the elastic conductive support is arranged on the side of the conductive base away from the insulating functional layer, the first end of the elastic conductive support is fixed with the conductive base, the second end of the elastic conductive support is fixed with the first end of the conductive pin, and the second end of the conductive pin protrudes from the surface of the disc body, so that the second end of the conductive pin is in contact with the wafer in the case that the wafer is adsorbed on the electrostatic chuck, and the wafer is electrically connected with the conductive base through the conductive pin and the elastic conductive support in sequence, so that the grounding of the wafer is realized. In the case that the wafer is adsorbed on the electrostatic chuck, the wafer exerts a force on the conductive pin towards the side of the conductive base under the adsorption of the electrostatic chuck, the second end of the elastic conductive support is driven by the conductive pin to move a distance towards the side away from the wafer, the elastic conductive support is elastically deformed because the first end of the elastic conductive support is fixed with the conductive base, and the second end of the conductive pin is driven to contact the wafer under the action of the elastic force of the elastic conductive support, so that the grounding of the wafer is more stable. Because the elastic conductive support is located on the side of the conductive base away from the insulating functional layer, the replacement or adjustment of the elastic conductive support and the conductive pin is more convenient, and the time for replacing or adjusting the elastic conductive support and the conductive pin can be reduced, so that the working efficiency of the ion implantation equipment is improved. BRIEF DESCRIPTION OF DRAWINGS
[0012] Figure 1 The exploded schematic view of the target disc disclosed by the embodiment of the application is shown in the figure.
[0013] Figure 2 The overall structure schematic view of the target disc disclosed by the embodiment of the application is shown in the figure.
[0014] Figure 3 The sectional view of the target disc disclosed by the embodiment of the application is shown in the figure.
[0015] Figure 4 The state of the elastic conductive support when the wafer is not in contact with the conductive pin is shown in the figure.
[0016] Figure 5 The state of the elastic conductive support when the wafer is in contact with the conductive pin is shown in the figure.
[0017] Figure 6 The structure schematic view of another target disc disclosed by the embodiment of the application is shown in the figure.
[0018] Explanation of reference signs:
[0019] A-wafer,
[0020] 100-conductive base, 101-first through hole, 110-second adjustment mounting portion,
[0021] 200 - insulation function layer, 201 - second through hole, 210 - thermal insulation layer, 220 - insulation layer,
[0022] 300 - electrostatic chuck, 301 - third through hole, 301a - step surface,
[0023] 400 - conductive assembly, 410 - conductive pin, 420 - elastic conductive support, 421 - avoiding hole, 422 - first adjusting mounting part, 430 - first connecting piece, 431 - limiting head, 432 - connecting rod part,
[0024] 500 - insulation bushing, 501 - fourth through hole,
[0025] 600 - second connecting piece,
[0026] 700 - disc body through hole. DETAILED DESCRIPTION
[0027] In order to make the purpose, technical scheme and advantages of the utility model more clear, the following will combine the utility model specific embodiment and corresponding drawings to make the utility model technical scheme clear, complete description. Obviously, the described embodiment is only a part of the embodiment of the utility model, rather than all the embodiments. Based on the embodiment in the utility model, all other embodiments obtained by the person skilled in the art without making creative labor belong to the protection scope of the utility model.
[0028] The following will combine the drawings, and the technical scheme disclosed by each embodiment of the utility model will be described in detail.
[0029] Please refer to Figures 1 to 6 The utility model embodiment discloses a target disc, and the disclosed target disc can be used in ion implantation equipment, and the target disc is mainly responsible for fixing and positioning wafer A.
[0030] The disclosed target disc includes a disc body and a conductive assembly 400. The disc body is the main part of the target disc, and the disc body is used for adsorbing wafer A. The disc body includes a conductive base 100, an insulation function layer 200 and an electrostatic chuck 300 which are sequentially stacked in the horizontal direction. The conductive base 100, the insulation function layer 200 and the electrostatic chuck 300 can be stacked by bonding, welding, clamping and the like.
[0031] The conductive base 100 is the mounting basis of each component of the disc body, and the conductive base 100 is grounded. Specifically, the conductive base 100 can be connected with the target disc seat to realize the installation of the target disc, and the target disc seat is in a grounded state. After the conductive base 100 is connected with the target disc seat, the conductive base 100 is electrically connected with the target disc seat, so that the conductive base 100 is in a grounded state.
[0032] The electrostatic chuck 300 is used to adsorb the wafer A to realize the fixation and positioning of the wafer A. The wafer A is adsorbed on the side of the electrostatic chuck 300 away from the insulating functional layer 200.
[0033] Since the electrostatic chuck 300 has the electrostatic adsorption effect on the wafer A, the electrostatic chuck 300 cannot be grounded, and therefore, the insulating functional layer 200 is used to insulate and isolate the electrostatic chuck 300 from the conductive base 100.
[0034] The conductive assembly 400 includes a conductive pin 410 and an elastic conductive support 420. The conductive pin 410 can be a cylindrical structure or a prismatic structure, and the elastic conductive support 420 can be an elastic conductive rod or an elastic conductive sheet. The structure of the conductive pin 410 and the elastic conductive support 420 is not limited in the embodiments of the present application.
[0035] The conductive pin 410 penetrates the disc body in the horizontal direction, and the elastic conductive support 420 is arranged on the side of the conductive base 100 away from the insulating functional layer 200.
[0036] Specifically, the side of the conductive base 100 away from the insulating functional layer 200 can have a sink groove, and the elastic conductive support 420 can be located in the sink groove. The groove opening of the sink groove can be flush with or higher than the elastic conductive support 420, so as to facilitate the installation of the conductive base 100 and the target disc seat. Of course, the side of the conductive base 100 away from the insulating functional layer 200 can also be a planar structure, and the target disc seat can be provided with a corresponding avoiding space to avoid the elastic conductive support 420, so as to facilitate the installation of the conductive base 100 and the target disc seat.
[0037] The first end of the elastic conductive support 420 is fixed to the conductive base 100. The first end of the elastic conductive support 420 can be fixed to the conductive base 100 through a second connecting member 600 (such as a bolt, a rivet, etc.), and the second connecting member 600 can be a conductive member. Of course, the first end of the elastic conductive support 420 can also be fixed to the conductive base 100 by welding, and the fixing mode of the first end of the elastic conductive support 420 to the conductive base 100 is not limited in the embodiments of the present application.
[0038] The second end of the elastic conductive support 420 is fixed to the first end of the conductive pin 410. The second end of the elastic conductive support 420 and the first end of the conductive pin 410 can be fixed through a first connecting member 430 (such as a bolt, a rivet, etc.). Of course, the second end of the elastic conductive support 420 and the first end of the conductive pin 410 can also be connected by welding, and the fixing mode of the second end of the elastic conductive support 420 to the first end of the conductive pin 410 is not limited in the embodiments of the present application.
[0039] The second end of the conductive pin 410 protrudes from the surface of the disc body. The second end of the conductive pin 410 protruding from the surface of the disc body refers to that, in the case that the wafer does not contact the second end of the conductive pin 410, the second end of the conductive pin 410 protrudes from the surface of the side of the electrostatic chuck 300 away from the insulating functional layer 200. The height of the second end of the conductive pin 410 protruding from the surface of the disc body depends on the movement distance of the second end of the elastic conductive support 420 before the elastic deformation failure of the elastic conductive support 420 and the movement distance of the second end of the elastic conductive support 420 when the conductive pin 410 interferes with the inner wall of the hole in which the conductive pin 410 is installed. The embodiment of the utility model does not limit the specific height of the second end of the conductive pin 410 protruding from the surface of the disc body, and the person skilled in the art can adaptively design according to the specifications of the target disc, for example, adjust the structure or material of the elastic conductive support 420 to adjust the elastic coefficient, and then adjust the movement distance of the second end of the elastic conductive support 420 before the elastic deformation failure of the elastic conductive support 420, and at the same time, the distance between the conductive pin 410 and the inner wall of the hole in which the conductive pin 410 is installed can be adjusted.
[0040] The target disc disclosed by the embodiment of the application sets the conductive assembly 400, and sets the conductive assembly 400 as a structure including the conductive pin 410 and the elastic conductive support 420, the elastic conductive support 420 is arranged on the side of the conductive base 100 away from the insulating functional layer 200, the first end of the elastic conductive support 420 is fixed with the conductive base 100, the second end of the elastic conductive support 420 is fixed with the first end of the conductive pin 410, and the second end of the conductive pin 410 protrudes from the surface of the disc body, so that in the case that the wafer A is adsorbed on the electrostatic chuck 300, the second end of the conductive pin 410 contacts the wafer A, and the wafer A is sequentially electrically connected with the conductive base 100 through the conductive pin 410 and the elastic conductive support 420, so as to realize the grounding of the wafer A. In the case that the wafer A is adsorbed on the electrostatic chuck 300, the wafer A exerts a force on the conductive pin 410 towards the side of the conductive base 100 under the adsorption of the electrostatic chuck 300, the conductive pin 410 drives the second end of the elastic conductive support 420 to move a distance towards the side away from the wafer A, and since the first end of the elastic conductive support 420 is fixed with the conductive base 100, the elastic conductive support 420 will be elastically deformed, and the elastic conductive support 420 drives the second end of the conductive pin 410 to contact the wafer A under the action of the elastic force, so as to make the grounding of the wafer A more stable. Since the elastic conductive support 420 is located on the side of the conductive base 100 away from the insulating functional layer 200, it is more convenient to replace or adjust the elastic conductive support 420 and the conductive pin 410, and thus the time for replacing or adjusting the elastic conductive support 420 and the conductive pin 410 can be reduced, so as to be beneficial to improving the working efficiency of the ion implantation equipment.
[0041] It should be noted that the elastic force applied by the elastic conductive support 420 needs to be less than the adsorption force of the electrostatic chuck 300 on the wafer A, so as to avoid the elastic force applied by the elastic conductive support 420 from lifting the wafer A. The present application does not limit the size of the elastic force applied by the elastic conductive support 420 on the wafer A, and those skilled in the art can design the size of the elastic force applied by the elastic conductive support 420 on the wafer A according to the size of the adsorption force of the electrostatic chuck 300 on the wafer A.
[0042] Optionally, the second end of the elastic conductive support 420 can be provided with a avoiding hole 421, and the conductive assembly 400 can further include a first connecting piece 430, the first connecting piece 430 can have a limiting head 431 and a connecting rod part 432 connected with the limiting head 431, the connecting rod part 432 can pass through the avoiding hole 421 and be connected with the first end of the conductive pin 410, and the second end of the elastic conductive support 420 can be limited between the first end of the conductive pin 410 and the limiting head 431.
[0043] It should be noted that the outer diameter of the limiting head 431 is greater than the hole diameter of the avoiding hole 421. The connecting rod part 432 and the first end of the conductive pin 410 can be threadedly connected, welded, riveted, etc., and the present application does not make specific limitation on the connection mode of the connecting rod part 432 and the first end of the conductive pin 410.
[0044] The target disc disclosed in the present application is provided with the first connecting piece 430, and the first connecting piece 430 is provided as a structure including the limiting head 431 and the connecting rod part 432 connected with the limiting head 431, the second end of the elastic conductive support 420 is provided with the avoiding hole 421, so that the connecting rod part 432 is connected with the first end of the conductive pin 410 after passing through the avoiding hole 421, and the second end of the elastic conductive support 420 is limited between the first end of the conductive pin 410 and the limiting head 431, so that the connection between the second end of the elastic conductive support 420 and the conductive pin 410 is more stable.
[0045] The first end of the conductive pin 410 can be connected to the second end of the elastic conductive support 420 by welding or other non- relative motion connection. In the case of welding or other non- relative motion connection between the first end of the conductive pin 410 and the second end of the elastic conductive support 420, when the wafer A is adsorbed on the electrostatic chuck 300, the second end of the elastic conductive support 420 will move towards the side away from the wafer A, and the elastic conductive support 420 will be elastically deformed, so that the conductive pin 410 generates an inclination angle relative to the horizontal direction. If the hole diameter of the hole for installing the conductive pin 410 is relatively small, the conductive pin 410 will interfere with the hole wall of the hole for installing the conductive pin 410, causing the conductive pin 410 to be stuck, and thus the conductive pin 410 cannot continue to move towards the side away from the wafer A, thereby causing the wafer A to be lifted by the conductive pin 410, and thus easily causing the wafer A to generate an inclination angle relative to the surface of the electrostatic chuck 300, or even causing the wafer A to slip. Therefore, in the case of welding or other non- relative motion connection between the first end of the conductive pin 410 and the second end of the elastic conductive support 420, the hole diameter of the hole for installing the conductive pin 410 needs to be set larger to prevent the conductive pin 410 from interfering with the hole wall of the hole for installing the conductive pin 410.
[0046] In another embodiment, the hole diameter of the avoiding hole 421 can be greater than the radial dimension of the connecting rod portion 432. The distance between the first end of the conductive pin 410 and the limiting head portion 431 can be greater than the thickness of the elastic conductive support 420 along the extension direction of the connecting rod portion 432, so that the first end of the conductive pin 410 can be adjusted in position relative to the elastic conductive support 420. When the wafer A is adsorbed on the electrostatic chuck 300, the second end of the elastic conductive support 420 will move towards the side away from the wafer A, and the elastic conductive support 420 will be elastically deformed. Since the first end of the conductive pin 410 can be adjusted in position relative to the elastic conductive support 420, when the conductive pin 410 moves along the hole for installing the conductive pin 410, the first end of the conductive pin 410 can move relative to the elastic conductive support 420, so that the conductive pin 410 will not be stuck, and thus the hole diameter of the hole for installing the conductive pin 410 can be set relatively small when designing, and the smaller hole diameter is conducive to alleviating the shaking of the conductive pin 410, and thus is conducive to improving the stability of the contact between the conductive pin 410 and the wafer A.
[0047] Optionally, the first connecting piece 430 can be a conductive bolt, the limiting head portion 431 can be a nut of the conductive bolt, the connecting rod portion 432 can be a screw rod of the conductive bolt, and the end face of the first end of the conductive pin 410 can be provided with a first threaded hole, and the connecting rod portion 432 can be screwed with the first threaded hole. The material of the conductive bolt can be selected from stainless steel or copper, and the material of the conductive bolt is not limited in the embodiment of the present application.
[0048] The target disc disclosed by the embodiment of the application sets the first connecting piece 430 as a conductive bolt, so that the structure of the first connecting piece 430 is relatively simple, and the conductive pin 410 can be electrically connected with the elastic conductive support 420 through the conductive bolt, thereby improving the stability of the electrical connection between the conductive pin 410 and the elastic conductive support 420.
[0049] To avoid the charge of the wafer A from being conducted to the part outside the conductive base 100 of the disc body, optionally, the target disc can further include an insulating bushing 500, the disc body can be provided with a disc body through hole 700 penetrating in the horizontal direction, the disc body through hole 700 can have a mounting hole section extending from the conductive base 100 to the electrostatic chuck 300. The insulating bushing 500 can be arranged in the mounting hole section, and the insulating bushing 500 can be provided with a fourth through hole 501, and the conductive pin 410 can be arranged in the fourth through hole 501.
[0050] The target disc disclosed by the embodiment of the application sets the insulating bushing 500, so that the insulating bushing 500 insulates and separates the conductive pin 410 from the insulating functional layer 200 and the electrostatic chuck 300 respectively, thereby avoiding the charge of the wafer A from being conducted to the part outside the conductive base 100 of the disc body.
[0051] It should be noted that, in the case that the first end of the conductive pin 410 and the second end of the elastic conductive support 420 are connected by welding or other connection modes that cannot move relative to each other, the hole diameter of the fourth through hole 501 needs to be relatively large, that is, the hole diameter of the fourth through hole 501 is larger than the outer diameter of the conductive pin 410, so as to adapt to the inclination of the conductive pin 410 relative to the horizontal direction. In the case that the first end of the conductive pin 410 can be adjusted in position relative to the second end of the elastic conductive support 420, the hole diameter of the fourth through hole 501 can be relatively small, so that the inner surface of the insulating bushing 500 is in contact with the outer surface of the conductive pin 410.
[0052] To make the installation of the insulating bushing 500 more stable, optionally, the inside of the disc body through hole 700 can have a stepped surface 301a at the position of the electrostatic chuck 300, the end of the first end of the insulating bushing 500 can be in limiting contact with the stepped surface 301a on the side facing the electrostatic chuck 300, and the end of the second end of the insulating bushing 500 can be in limiting contact with the limiting head 431.
[0053] Specifically, the disc body through hole 700 can include a first through hole 101, a second through hole 201 and a third through hole 301 provided on the conductive base 100, the insulating functional layer 200 and the electrostatic chuck 300, and the stepped surface 301a is located in the third through hole 301.
[0054] The target disc disclosed by the embodiment of the present application sets the stepped surface 301a inside the disc body through hole 700, so that the end of the first end of the insulating bushing 500 is in limiting contact with the stepped surface 301a on the side facing the electrostatic chuck 300, and the end of the second end of the insulating bushing 500 is in limiting contact with the limiting head 431, thereby avoiding the insulating bushing 500 from sliding out of the disc body through hole 700, and further improving the stability of the installation of the insulating bushing 500.
[0055] The material of the insulating bushing 500 can be quartz, boron nitride, etc. In order to make the insulating bushing 500 have better insulation performance and mechanical strength, the material of the insulating bushing 500 can be a ceramic material, optionally. By setting the material of the insulating bushing 500 as a ceramic material, the insulating bushing 500 can have better insulation performance and mechanical strength.
[0056] Further, the ceramic material can be aluminum oxide. Aluminum oxide has very high heat resistance and can work at a temperature of more than 1700°C, so that the insulating bushing 500 has better thermal stability. Of course, the ceramic material can also be selected from silicon nitride, zirconium oxide, etc., and the selection of the ceramic material is not specifically limited in the embodiment of the present application.
[0057] When the ion implantation equipment performs the ion implantation process on the wafer A, the temperature of the wafer A is usually about 500°C. In order to make the elastic conductive support 420 still have better elasticity at high temperature, the material of the elastic conductive support 420 can be stainless steel or copper, optionally. The elastic modulus of stainless steel is relatively large (the elastic modulus of stainless steel > 1.8e11 N·m2), and the melting point is about 1400°C. Therefore, stainless steel can be suitable for application environments with relatively large demand for elastic modulus. The elastic modulus of copper is relatively small (the elastic modulus of copper < 1.2e11 N·m2), and the melting point is about 1100°C. Therefore, copper can be suitable for application environments with relatively small demand for elastic modulus. The melting points of stainless steel and copper are relatively high, and neither stainless steel nor copper is easy to deform when the wafer A performs the ion implantation process, so that the elastic conductive support 420 can still maintain better elasticity at high temperature.
[0058] Optionally, the insulating functional layer 200 can only include the insulating layer 220.
[0059] Since the conductive base 100 and the side of the target disk seat connected with the conductive base 100 have components such as control devices, the temperature of the conductive base 100 and the side of the target disk seat connected with the conductive base 100 should be avoided to be too high. In order to avoid the temperature of the conductive base 100 and the side of the target disk seat connected with the conductive base 100 being too high, the insulating functional layer 200 can optionally include a heat insulation layer 210 and an insulating layer 220, and the electrostatic chuck 300, the heat insulation layer 210, the insulating layer 220 and the conductive base 100 can be sequentially stacked in the horizontal direction. The heat insulation layer 210 can prevent the high temperature of the wafer A and the electrostatic chuck 300 from being transmitted to the conductive base 100 and the side of the target disk seat connected with the conductive base 100, so that the temperature of the conductive base 100 and the side of the target disk seat connected with the conductive base 100 can be avoided to be too high. The electrostatic chuck 300, the heat insulation layer 210, the insulating layer 220 and the conductive base 100 can be stacked by bonding, welding, clamping or the like.
[0060] In specific implementation, the conductive base 100 is generally made of metal material, and the conductive base 100 can further have a cooling channel inside. The cooling medium can be introduced into the cooling channel, so that the conductive base 100 can be cooled, thereby further avoiding the temperature of the conductive base 100 and the side of the target disk seat connected with the conductive base 100 being too high.
[0061] In order to adjust the size of the elastic force of the elastic conductive support 420, the elastic conductive support 420 can have a plurality of first adjustment mounting portions 422 spaced apart between the first end of the elastic conductive support 420 and the second end of the elastic conductive support 420, and the conductive base 100 can have a plurality of second adjustment mounting portions 110 corresponding to the plurality of first adjustment mounting portions 422. The elastic conductive support 420 can be fixed to the conductive base 100 by the cooperation of the first adjustment mounting portion 422 and the corresponding second adjustment mounting portion 110.
[0062] It should be noted that, among the plurality of first adjustment mounting portions 422 and the plurality of second adjustment mounting portions 110, when the elastic conductive support 420 is fixed by one of the first adjustment mounting portion 422 and the second adjustment mounting portion 110, the other first adjustment mounting portion 422 and the second adjustment mounting portion 110 do not fix the elastic conductive support 420. When the elastic conductive support 420 is fixed by adjusting different first adjustment mounting portions 422 and second adjustment mounting portions 110, it is equivalent to adjusting the length of the force arm of the elastic conductive support 420, so that the size of the elastic force of the elastic conductive support 420 can be flexibly adjusted.
[0063] Specifically, the first adjusting mounting portion 422 can be a through hole formed in the elastic conductive bracket 420, the second adjusting mounting portion 110 can be a threaded hole formed in the conductive base 100, and the target plate can have a bolt, the bolt can be screwed through the through hole and the threaded hole, so as to fix the elastic conductive bracket 420. Of course, one of the first adjusting mounting portion 422 and the second adjusting mounting portion 110 can be a buckle, and the other can be a buckle matching portion matched with the buckle, the buckle can be clamped with the buckle matching portion to fix the elastic conductive bracket 420. Of course, the first adjusting mounting portion 422 and the second adjusting mounting portion 110 can also be other structures, and the embodiments of the present application do not make specific limitations on the structures of the first adjusting mounting portion 422 and the second adjusting mounting portion 110.
[0064] Optionally, the conductive assembly 400 can be multiple, and the multiple conductive assemblies 400 can be uniformly distributed in the direction around the center of the electrostatic chuck 300, so that the conductive pins 410 of the multiple conductive assemblies 400 are in contact with the wafer A, which not only can improve the stability of the wafer A grounding, but also can make the wafer A receive the force of the conductive pins 410 relatively uniformly in the direction around the center of the electrostatic chuck 300.
[0065] In specific implementation, the multiple conductive pins 410 can be arranged on the area close to the 1 / 4 radius to 1 / 2 radius of the disc body.
[0066] The present application also discloses an ion implantation equipment, the disclosed ion implantation equipment comprises a reaction chamber and the target plate disclosed in the above embodiments, and the target plate can be arranged in the reaction chamber.
[0067] The ion source of the ion implantation equipment enters the reaction chamber to reach the wafer A on the target plate after sequentially passing through a source module, a pre-analysis module, an acceleration module, a mass analysis module and a parallel module, and the principle that the ion source enters the reaction chamber to reach the wafer A on the target plate after sequentially passing through the source module, the pre-analysis module, the acceleration module, the mass analysis module and the parallel module belongs to the prior art, and the embodiments of the present application will not be repeated.
[0068] The ion implantation equipment disclosed by the embodiments of the present application sets the target disc disclosed by the above embodiments, so that when the wafer A is adsorbed to the electrostatic chuck 300, the wafer A exerts an action force on the conductive pin 410 toward the side of the conductive base 100 under the adsorption of the electrostatic chuck 300, the conductive pin 410 drives the second end of the elastic conductive support 420 to move a distance away from the wafer A, since the first end of the elastic conductive support 420 is fixed to the conductive base 100, the elastic conductive support 420 will be elastically deformed, and the elastic conductive support 420 drives the second end of the conductive pin 410 to contact the wafer A under the action of the elastic force, so that the grounding of the wafer A is more stable. Since the elastic conductive support 420 is located on the side of the conductive base 100 away from the insulating functional layer 200, it is more convenient to replace or adjust the elastic conductive support 420 and the conductive pin 410, thereby reducing the time for replacing or adjusting the elastic conductive support 420 and the conductive pin 410, thereby facilitating the improvement of the working efficiency of the ion implantation equipment.
[0069] The above embodiments of the present application are described in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive, and those skilled in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims, which all belong to the protection of the present application.
[0070] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive, and those skilled in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims, which all belong to the protection of the present application.
Claims
1. A target disk, characterized in that, Includes a disk body and conductive components (400); wherein, The disk body is used to adsorb the wafer (A). The disk body includes a conductive base (100), an insulating functional layer (200) and an electrostatic chuck (300) stacked sequentially in the horizontal direction. The wafer (A) is adsorbed on the side of the electrostatic chuck (300) away from the insulating functional layer (200). The conductive component (400) includes a conductive pin (410) and an elastic conductive support (420). The conductive pin (410) penetrates the disk body in the horizontal direction. The elastic conductive support (420) is disposed on the side of the conductive base (100) away from the insulating functional layer (200). The first end of the elastic conductive support (420) is fixed to the conductive base (100), and the second end of the elastic conductive support (420) is fixed to the first end of the conductive pin (410). The second end of the conductive pin (410) protrudes from the surface of the disk body.
2. The target disk according to claim 1, characterized in that, The second end of the elastic conductive bracket (420) is provided with a clearance hole (421). The conductive component (400) also includes a first connector (430). The first connector (430) has a limiting head (431) and a connecting rod portion (432) connected to the limiting head (431). The connecting rod portion (432) passes through the clearance hole (421) and is connected to the first end of the conductive pin (410). The second end of the elastic conductive bracket (420) is limited between the first end of the conductive pin (410) and the limiting head (431).
3. The target disk according to claim 2, characterized in that, The diameter of the clearance hole (421) is larger than the radial dimension of the connecting rod portion (432); The distance between the first end of the conductive pin (410) and the limiting head (431) is greater than the thickness of the elastic conductive bracket (420) along the extension direction of the connecting rod portion (432).
4. The target disk according to claim 2, characterized in that, The first connector (430) is a conductive bolt, the limiting head (431) is the nut of the conductive bolt, the connecting rod (432) is the screw of the conductive bolt, the first end face of the conductive pin (410) is provided with a first threaded hole, and the connecting rod (432) is threadedly engaged with the first threaded hole.
5. The target disk according to claim 2, characterized in that, The target disk also includes an insulating bushing (500). The disk body has a disk body through hole (700) extending along the horizontal direction. The disk body through hole (700) has a mounting hole section. The insulating bushing (500) passes through the mounting hole section. The insulating bushing (500) has a fourth through hole (501). The conductive pin (410) passes through the fourth through hole (501).
6. The target disk according to claim 5, characterized in that, Furthermore, the diameter of the fourth through hole (501) is larger than the outer diameter of the conductive pin (410).
7. The target disk according to claim 5, characterized in that, The inner wall of the through hole (700) of the disc body has a stepped surface (301a) at the electrostatic chuck (300), and the end of the first end of the insulating bushing (500) makes a limiting contact with the stepped surface (301a) on the side facing the electrostatic chuck (300).
8. The target disk according to claim 5, characterized in that, The insulating bushing (500) is made of ceramic material.
9. The target disk according to claim 8, characterized in that, The ceramic material is aluminum oxide.
10. The target disk according to claim 1, characterized in that, The material of the elastic conductive support (420) is stainless steel or copper.
11. The target disk according to claim 1, characterized in that, The insulating functional layer (200) includes a heat insulation layer (210) and an insulating layer (220), and the electrostatic chuck (300), the heat insulation layer (210), the insulating layer (220) and the conductive base (100) are stacked sequentially along the horizontal direction.
12. The target disk according to claim 1, characterized in that, Between the first end of the elastic conductive support (420) and the second end of the elastic conductive support (420), the elastic conductive support (420) has a plurality of spaced first adjustment mounting portions (422), and the conductive base (100) has second adjustment mounting portions (110) distributed corresponding to the plurality of first adjustment mounting portions (422). The elastic conductive support (420) can be fixed to the conductive base (100) by the cooperation of the first adjustment mounting portions (422) and the corresponding second adjustment mounting portions (110).
13. The target disk according to claim 1, characterized in that, There are multiple conductive components (400), and the multiple conductive components (400) are evenly distributed along the direction surrounding the center of the electrostatic chuck (300).
14. An ion implantation device, characterized in that, It includes a reaction chamber and a target disk as described in any one of claims 1 to 13, wherein the target disk is disposed within the reaction chamber.