Organic vapor deposition device for preparing semiconductor nanomaterial
By designing an organic vapor deposition apparatus with a gas spraying mechanism and a rotating mechanism, the problems of uneven film thickness and properties were solved, achieving uniform film deposition and improving product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-23
- Publication Date
- 2026-03-31
AI Technical Summary
In the prior art, due to unreasonable structural design of the gas distribution unit, the flow rate of the reaction gas is too high, resulting in uneven film thickness and properties, which reduces the yield of the product.
An organic vapor deposition apparatus including a gas spraying mechanism and a rotating mechanism was designed. By using upper and lower gas distribution layers and staggered exhaust holes, combined with the rotating mechanism, the reactive gases are ensured to be uniformly mixed on the surface of the deposition tray, reducing airflow disturbance and achieving uniform film deposition.
Uniform film deposition was achieved, improving product yield and ensuring reliable workpiece fixation and film uniformity during deposition.
Smart Images
Figure CN224062887U_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor manufacturing technology, and in particular relates to an organic vapor deposition apparatus for preparing semiconductor nanomaterials. Background Technology
[0002] Metal-organic chemical vapor deposition (MOCVD) is a key process for fabricating semiconductor thin-film devices, including various microelectronic devices, thin-film photovoltaic cells, and light-emitting diodes. The basic growth process of MOCVD involves introducing reactive gases from a gas source into a reaction chamber, where a substrate heated by a heater initiates a chemical reaction, thereby generating single-crystal or polycrystalline thin films on the substrate. During MOCVD, the reactants required for film growth reach the growth surface via gas transport (flow and diffusion). Simultaneously, chemical reactions occur, and ultimately, the grown particles combine through adsorption and surface reactions to form a semiconductor thin film.
[0003] In organic vapor deposition (EVD), to form a thin film of uniform thickness and good quality on the workpiece surface, the reactive gases must reach the wafer surface uniformly. However, in existing technologies, due to unreasonable structural design of the gas distribution unit, the flow rates of the reactive gases and inert superheated gases introduced during the reaction process are too high. When in contact with the workpiece, these gases can easily cause gaseous disturbances to the workpiece on the support, thus adversely affecting the deposition of the thin film. This results in uneven thickness and properties of the deposited film, reducing product yield. Utility Model Content
[0004] The purpose of this invention is to provide an organic vapor deposition apparatus for preparing semiconductor nanomaterials, which can solve the problems of uneven film thickness and properties and low product yield in the existing technology.
[0005] The organic vapor deposition apparatus for preparing semiconductor nanomaterials includes a deposition chamber, a gas spraying mechanism and a deposition tray disposed within the deposition chamber. The gas spraying mechanism is fixed to the upper inner wall of the deposition chamber, and the deposition tray is disposed directly below the gas spraying mechanism. A rotating mechanism is fixed at the bottom of the deposition chamber, and the rotating shaft of the rotating mechanism extends into the deposition chamber and is connected to the bottom center of the deposition tray.
[0006] The gas spraying mechanism includes a gas equalization seat, a mounting ring, mounting holes, a first exhaust hole, a support step, and a gas equalization plate. The longitudinal section of the gas equalization seat is U-shaped. Multiple first exhaust holes are provided at the bottom of the gas equalization seat. A support step is formed on the inner wall of the middle part of the gas equalization seat. The gas equalization plate is supported on the support step. Multiple second exhaust holes are provided on the gas equalization plate. The top edge of the gas equalization seat extends outward to form a mounting ring. Multiple mounting holes are provided on the mounting ring. The gas equalization seat is fixedly connected to the sedimentation chamber by bolts in the mounting holes.
[0007] Based on the above design, the gas spraying mechanism in this device forms two gas distribution layers through a gas equalization seat and a gas equalization plate. The input gas, after being turbulent and mixed by the first exhaust hole on the equalization seat and the second exhaust hole on the equalization plate, not only allows for the slow release of the two reactive gases, effectively reducing the gas flow rate in the deposition chamber and minimizing airflow disturbance to the workpiece, ensuring the workpiece is firmly fixed during deposition, but also ensures uniform mixing of the two reactive gases, resulting in a uniform film and high product yield. Simultaneously, the gas spraying mechanism, in conjunction with the rotating mechanism below, further ensures uniform mixing of the two reactive gases on the surface of the deposition tray within the deposition chamber, thereby further guaranteeing uniform film deposition and a high product yield.
[0008] Furthermore, the centerlines of the first exhaust port and the second exhaust port are not collinear.
[0009] The above design, which alternates between the first and second exhaust ports, further reduces the gas flow rate in the deposition chamber and minimizes the disturbance of the airflow to the workpiece. This not only allows for more secure fixation of the workpiece during deposition but also enables more uniform mixing of the two reactive gases, ensuring a more uniform film after deposition and a higher product yield.
[0010] Furthermore, both the first and second exhaust ports adopt a trumpet-shaped structure that is larger at the top and smaller at the bottom.
[0011] The trumpet-shaped first and second exhaust ports can further reduce the gas flow rate in the deposition chamber, reduce the disturbance of the airflow to the workpiece, and make the workpiece more securely fixed during deposition.
[0012] Furthermore, both the first and second exhaust ports are arranged in an array.
[0013] The array-distributed first and second exhaust holes not only make the airflow discharged by the gas spraying mechanism more uniform and stable, resulting in a uniform film after deposition and a high product yield, but also reduce the disturbance of airflow to the workpiece.
[0014] Furthermore, air equalization chambers are formed both above and below the air equalization plate.
[0015] By setting up two gas equalization chambers, the two reactive gases in the deposition chamber can be mixed evenly in the gas spraying mechanism, thereby further ensuring uniform film deposition and resulting in a high product yield.
[0016] Furthermore, the rotating mechanism includes a rotary motor fixed to the bottom of the deposition chamber, the output shaft of which extends into the deposition chamber and is connected to the bottom of the deposition tray.
[0017] By controlling the rotary motor to drive the deposition tray to rotate, and cooperating with the gas spraying mechanism, the two reactive gases in the deposition chamber can be uniformly mixed on the surface of the deposition tray, thereby further ensuring uniform film deposition and resulting in a high product yield.
[0018] Furthermore, multiple sets of limiting components for limiting the workpiece are formed on the surface of the deposition tray, and blocks are formed on the side edges of the deposition tray.
[0019] The design of the limiting components and stops enables reliable fixation of the workpiece during deposition, ensuring a uniform film and a high product yield.
[0020] Furthermore, the top of the sedimentation chamber is connected to a first air inlet pipe and a second air inlet pipe, and the ends of the first air inlet pipe and the second air inlet pipe are coiled inside the gas spraying mechanism. The first air inlet pipe and the second air inlet pipe located inside the gas spraying mechanism are evenly provided with multiple air outlets. An exhaust pipe is connected to the bottom of the sedimentation chamber, and the exhaust end of the exhaust pipe is connected to the exhaust gas treatment mechanism.
[0021] Two reactive gases are introduced by connecting to a gas source through a first and a second air inlet pipe. The gas is then fed into the gas spraying mechanism through multiple outlets. After being uniformly mixed in the gas spraying mechanism, the gas reacts and deposits a semiconductor thin film on the workpiece on the deposition tray. The reacted gas is then discharged through an exhaust pipe to the exhaust gas treatment mechanism for treatment before being emitted.
[0022] Furthermore, a heating mechanism is attached to the lower surface of the deposition tray.
[0023] The heating mechanism ensures the stability of the workpiece temperature, which helps to improve the product yield.
[0024] Furthermore, the heating mechanism includes a heating plate and multiple electric heating wires embedded in the heating plate, and the distance between the multiple electric heating wires and the deposition tray gradually decreases from the center to the edge.
[0025] By designing the distribution of the heating wires in the manner described above, the growth temperature in the central region of the deposition tray can be reduced, thereby improving the phenomenon of inconsistent growth rates between the inner and outer rings and enabling the deposition of a more uniform semiconductor thin film on the workpiece surface.
[0026] Compared with the prior art, the present invention has the following beneficial effects:
[0027] 1. The gas spraying mechanism, through the design of upper and lower gas distribution layers, not only allows the two reactive gases to be released slowly, effectively reducing the gas flow rate in the deposition chamber and minimizing the disturbance of the airflow to the workpiece, thus ensuring the workpiece is firmly fixed during deposition, but also, through the two mixed gas chambers and the first and second exhaust holes staggered on the two gas distribution layers, the two reactive gases can be mixed evenly, resulting in a more uniform film after deposition and a higher product yield.
[0028] 2. The gas spraying mechanism, in conjunction with the rotating mechanism below, can further ensure that the two reactive gases in the deposition chamber are evenly mixed on the surface of the deposition tray, thereby further ensuring uniform film deposition and resulting in a high product yield. Attached Figure Description
[0029] Figure 1 This is a schematic diagram of the structure of this utility model;
[0030] Figure 2 This is a schematic diagram of the gas spraying mechanism;
[0031] Figure 3 This is a cross-sectional view of the gas spraying mechanism;
[0032] Figure 4 This is a schematic diagram of the heating mechanism.
[0033] The components in the diagram are named as follows: 1. Deposition chamber; 2. First air inlet pipe; 3. Second air inlet pipe; 4. Gas spraying mechanism; 401. Gas equalization seat; 402. Mounting ring; 403. Mounting hole; 404. First exhaust port; 405. Support step; 406. Gas equalization plate; 407. Second exhaust port; 5. Rotation mechanism; 6. Deposition tray; 7. Heating mechanism; 701. Heating plate; 702. Electric heating wire; 8. Exhaust pipe; 9. Tail gas treatment mechanism; 10. Limiting component; 11. Stop block. Detailed Implementation
[0034] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, but this is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
[0035] Example
[0036] like Figures 1-4 As shown, this embodiment provides an organic vapor deposition apparatus for preparing semiconductor nanomaterials, including a deposition chamber 1, a first inlet pipe 2, a second inlet pipe 3, a gas spraying mechanism 4, a rotating mechanism 5, a deposition tray 6, a heating mechanism 7, and an exhaust pipe 8. The first inlet pipe 2 and the second inlet pipe 3 are connected to the top of the deposition chamber 1. The gas spraying mechanism 4 and the deposition tray 6 are disposed within the deposition chamber 1. The gas spraying mechanism 4 is fixed to the upper inner wall of the deposition chamber 1, and the deposition tray 6 is located directly below the gas spraying mechanism 4. The heating mechanism 7 is attached to the lower surface of the deposition tray 6, and the rotating mechanism 5 is fixed to the bottom of the deposition chamber 1. The rotating shaft of the rotating mechanism 5 extends into the deposition chamber 1 and passes through the heating mechanism 7 before connecting to the bottom center of the deposition tray 6. The inlet ends of the first air inlet pipe 2 and the second air inlet pipe 3 are connected to the gas source. The ends of the first air inlet pipe 2 and the second air inlet pipe 3 are coiled inside the gas spraying mechanism 4. The first air inlet pipe 2 and the second air inlet pipe 3 located inside the gas spraying mechanism 4 are evenly provided with multiple air outlets. An exhaust pipe 8 is also connected to the bottom of the deposition chamber 1. The outlet end of the exhaust pipe 8 is connected to the exhaust gas treatment mechanism 9. Multiple sets of limiting components 10 for limiting the workpiece are formed on the surface of the deposition tray 6. A stop block 11 is formed on the side edge of the deposition tray 6.
[0037] This device, through the cooperation of a gas spraying mechanism 4 and a rotating mechanism 5 below, enables the two reactive gases in the deposition chamber 1 to be uniformly mixed on the surface of the deposition tray 6, thereby ensuring uniform film deposition and a high product yield. Simultaneously, the two reactive gases are introduced into the gas source via a first inlet pipe 2 and a second inlet pipe 3, and fed into the gas spraying mechanism 4 through multiple outlets. After uniform mixing within the gas spraying mechanism 4, the gases react and deposit on the workpiece on the deposition tray 6 to form a semiconductor thin film. The reacted gases are then discharged through an exhaust pipe 8 to a tail gas treatment mechanism 9 for treatment before being released. The heating mechanism 7 ensures the temperature stability of the workpiece, contributing to improved product yield. Finally, the design of the limiting component 10 and the stop 11 reliably fixes the workpiece during deposition, ensuring a more uniform film and a higher product yield.
[0038] It should be noted that in this example, no power device is installed on the first intake pipe 2, the second intake pipe 3, or the exhaust pipe 8 for gas delivery. However, the gas source itself has pressure, and the power device can be installed as needed in actual implementation.
[0039] like Figure 2 and Figure 3As shown, the gas spraying mechanism 4 includes a gas equalization seat 401, a mounting ring 402, mounting holes 403, first exhaust holes 404, a support step 405, and a gas equalization plate 406. The longitudinal section of the gas equalization seat 401 is U-shaped. Multiple first exhaust holes 404 are provided at the bottom of the gas equalization seat 401. A support step 405 is formed on the inner wall of the middle part of the gas equalization seat 401. The gas equalization plate 406 is supported on the support step 405. Multiple second exhaust holes 407 are provided on the gas equalization plate 406. The top edge of the gas equalization seat 401 extends outward to the mounting ring 402. Multiple mounting holes 403 are provided on the mounting ring 402. The gas equalization seat 401 is fixedly connected to the deposition chamber 1 by bolts in the mounting holes 403.
[0040] In this embodiment, the gas spraying mechanism 4 forms two gas distribution layers through the gas equalization seat 401 and the gas equalization plate 406. After the input gas is turbulent and mixed by the first exhaust hole 404 on the gas equalization seat 401 and the second exhaust hole 407 on the gas equalization plate 406, the two reactive gases are released slowly, which not only effectively reduces the gas flow rate in the deposition chamber 1, but also reduces the disturbance of the airflow to the workpiece, making the workpiece firmly fixed during deposition. This allows the two reactive gases to be mixed evenly, achieving the goal of uniform film after deposition and higher product yield.
[0041] See appendix Figure 2 The first exhaust port 404 and the second exhaust port 407 are both arranged in an array. The array arrangement of the first exhaust port 404 and the second exhaust port 407 not only makes the airflow discharged by the gas spraying mechanism 4 more uniform and stable, resulting in a uniform film after deposition and a high product yield, but also reduces the disturbance of the airflow to the workpiece.
[0042] like Figure 3 As shown, the centerlines of the first vent 404 and the second vent 407 are not collinear. This design, with the first vent 404 and the second vent 407 staggered, further reduces the gas flow rate within the deposition chamber 1, minimizing airflow disturbance to the workpiece. This not only allows for more secure workpiece fixation during deposition but also ensures more uniform mixing of the two reactive gases, resulting in a more uniform film after deposition and a higher product yield.
[0043] from Figure 3 It can also be seen that both the first vent 404 and the second vent 407 adopt a trumpet-shaped structure that is larger at the top and smaller at the bottom. The trumpet-shaped first vent 404 and second vent 407 can further reduce the gas flow rate in the deposition chamber 1, reduce the disturbance of the airflow to the workpiece, and make the workpiece more firmly fixed during deposition.
[0044] See appendix Figure 3Gas equalization chambers are formed both above and below the gas equalization plate 406. By setting up the upper and lower gas equalization chambers, the two reactive gases in the deposition chamber 1 can be further mixed evenly in the gas spraying mechanism 4, thereby further ensuring uniform film deposition and resulting in a higher product yield.
[0045] In this example, the rotating mechanism 5 includes a rotary motor fixed to the bottom of the deposition chamber 1. The output shaft of the rotary motor extends into the deposition chamber 1 and is connected to the bottom of the deposition tray 6. By controlling the rotary motor to drive the deposition tray 6 to rotate, it cooperates with the gas spraying mechanism 4 to ensure that the two reactive gases in the deposition chamber 1 are uniformly mixed on the surface of the deposition tray 6, thereby further ensuring uniform film deposition and resulting in a higher product yield.
[0046] like Figure 4 As shown, the heating mechanism 7 includes a heating plate 701 and multiple electric heating wires 702 embedded in the heating plate 701. The multiple electric heating wires 702 are either coiled in a spiral shape, an S-shape, or arranged in a cross shape, and the distance between the multiple electric heating wires 702 and the deposition tray 6 gradually decreases from the center to the edge.
[0047] By designing the distribution of the electric heating wire 702 in the manner described above, the growth temperature in the central region of the deposition tray 6 can be reduced, thereby improving the phenomenon of inconsistent growth rates between the inner and outer rings and enabling the deposition of a semiconductor thin film with better uniformity on the workpiece surface.
[0048] Therefore, the working principle of this device is as follows:
[0049] The first air inlet pipe 2 and the second air inlet pipe 3 introduce the two reactive gases into the gas spraying mechanism 4;
[0050] The two reactive gases introduced into the gas spraying mechanism 4 are first mixed in the gas equalization chamber above the gas equalization plate 406, and then mixed for the second time through the second exhaust hole 407 opened in the gas equalization plate 406 into the gas equalization chamber below the gas equalization plate 406. After that, they enter the deposition chamber 1 through the first exhaust hole 404 opened in the gas equalization seat 401.
[0051] The two reactive gases are mixed twice and the turbulent flow through the second exhaust port 407 and the first exhaust port 404 in sequence effectively reduces the gas flow rate. This not only allows the two reactive gases to be released slowly and reduces the disturbance of the airflow to the workpiece, but also makes the workpiece firmly fixed during deposition. It also allows the two reactive gases to be mixed evenly, so as to achieve a more uniform film after deposition and a higher product yield.
[0052] The deposition tray 6 rotates under the drive of the rotating mechanism 5. The two reactive gases that enter the deposition chamber 1 react and deposit on the workpiece on the deposition tray 6 to form a semiconductor thin film. The gas spraying mechanism 4, in cooperation with the rotating mechanism 5 below, can further ensure that the two reactive gases in the deposition chamber 1 are evenly mixed on the surface of the deposition tray 6, thus ensuring uniform film deposition and a high product yield.
Claims
1. An apparatus for organic vapor deposition of semiconductor nanomaterials, comprising a deposition chamber (1) and a gas spraying mechanism (4) and a deposition tray (6) arranged in the deposition chamber (1), characterized in that: The gas spraying mechanism (4) is fixed to the inner wall of the upper side of the deposition chamber (1), the deposition tray (6) is arranged directly below the gas spraying mechanism (4), and a rotating mechanism (5) is fixed to the bottom of the deposition chamber (1); the rotating shaft of the rotating mechanism (5) extends into the deposition chamber (1) and is connected to the center of the bottom of the deposition tray (6); The gas spraying mechanism (4) comprises a gas equalizing seat (401), a mounting ring (402), mounting holes (403), first exhaust holes (404), a support step (405) and a gas equalizing plate (406); the longitudinal section of the gas equalizing seat (401) is in the shape of a U; a plurality of first exhaust holes (404) are formed in the bottom of the gas equalizing seat (401); the support step (405) is formed on the inner wall of the middle part of the gas equalizing seat (401); the gas equalizing plate (406) is supported on the support step (405); a plurality of second exhaust holes (407) are formed in the gas equalizing plate (406); the top edge of the gas equalizing seat (401) extends outward to form the mounting ring (402); a plurality of mounting holes (403) are formed in the mounting ring (402); and the gas equalizing seat (401) is fixedly connected to the deposition chamber (1) through bolts in the mounting holes (403).
2. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 1, wherein: The central axes of the first exhaust holes (404) and the second exhaust holes (407) are not collinear.
3. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 2, wherein: The first exhaust holes (404) and the second exhaust holes (407) are in the shape of a horn with the upper part larger than the lower part.
4. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 3, wherein: The first exhaust holes (404) and the second exhaust holes (407) are arranged in an array.
5. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 1, wherein: Gas equalizing cavities are formed above and below the gas equalizing plate (406).
6. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 1, wherein: The rotating mechanism (5) comprises a rotating motor fixed to the bottom of the deposition chamber (1); the output shaft of the rotating motor extends into the deposition chamber (1) and is connected to the bottom of the deposition tray (6).
7. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 1, wherein: A plurality of limiting assemblies (10) for limiting workpieces are formed on the surface of the deposition tray (6); and a stop block (11) is formed on the side edge of the deposition tray (6).
8. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to any one of claims 1 to 7, characterized in that: The top of the deposition chamber (1) is connected to a first gas inlet pipe (2) and a second gas inlet pipe (3); the ends of the first gas inlet pipe (2) and the second gas inlet pipe (3) are arranged in the gas spraying mechanism (4); the first gas inlet pipe (2) and the second gas inlet pipe (3) arranged in the gas spraying mechanism (4) are uniformly provided with a plurality of gas outlets; an exhaust pipe (8) is connected to the bottom of the deposition chamber (1); and the gas outlet end of the exhaust pipe (8) is connected to a tail gas treatment mechanism (9).
9. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to any one of claims 1 to 7, characterized in that: A heating mechanism (7) is attached to the lower surface of the deposition tray (6).
10. The apparatus for producing semiconductor nanomaterials by organic vapor deposition according to claim 9, wherein: The heating mechanism (7) comprises a heating plate (701) and a plurality of electric heating wires (702) embedded in the heating plate (701); and the distance between the plurality of electric heating wires (702) and the deposition tray (6) gradually decreases from the center to the edge.