Ion implanter control device and hydrogen-helium coaxial ion implanter

Abstract

The utility model relates to an ion implanter control device and a hydrogen-helium coaxial ion implanter. The device comprises an upper computer, a lower computer connected with the upper computer, a gas flow controller arranged at a gas inlet of an ion source of the ion implanter, a vacuum gauge arranged in a cavity of the ion implanter, and a beam current sensor connected with an ion beam output part, the gas flow controller is connected to a gas inlet pipeline of an ion source of the ion implanter; the vacuum gauge detects the vacuum degree in the cavity of the ion implanter and uploads the vacuum degree to the lower computer, and the lower computer uploads the vacuum degree to the upper computer; the beam sensor detects beam intensity parameters of the ion beam and uploads the beam intensity parameters to the lower computer, and the lower computer uploads the beam intensity parameters to the upper computer; the upper computer outputs control parameters to the lower computer, and the lower computer controls the gas flow controller to respectively control the gas inflow of various gases; according to the technical scheme, the control efficiency is improved, and the control accuracy of the ion implanter is improved.

Description

Technical Field

[0001] This application relates to the field of ion implanter technology, and in particular to an ion implanter control device and a hydrogen-helium coaxial ion implanter. Background Technology

[0002] Ion implanters have a wide range of applications, playing an important role in nuclear energy, new energy, medical, and environmental protection fields. Because the ionization process is complex, the ionization effect is influenced by multiple factors such as gas concentration, temperature, and electric field within the cavity. Furthermore, the vacuum effect of the vacuum system is affected by external environmental factors such as temperature and humidity. Therefore, the same gas intake ratio will produce different proportions of ion beams at different times. Thus, it is necessary to adjust the gas intake ratio of the ion source to ensure that the ion implanter can output a stable proportion of ion beam.

[0003] Currently, to achieve the function of adjusting the beam current in an ion implanter, manual adjustment is mainly used. This requires the operator to adjust the ion source gas intake based on their own experience. This control method is inefficient and ineffective, which reduces the efficiency of the plasma beam output by the ion implanter. Utility Model Content

[0004] The purpose of this application is to address one of the aforementioned technical deficiencies by providing a control device for an ion implanter and a hydrogen-helium coaxial ion implanter, thereby achieving automated control functions, improving control efficiency, and increasing the efficiency of the output plasma beam.

[0005] An ion implanter control device includes: a host computer, a slave computer connected to the host computer, a gas flow controller located at the inlet of the ion source of the ion implanter, a vacuum gauge located inside the cavity of the ion implanter, and a beam current sensor connected to the ion beam output component.

[0006] The gas flow controller is connected to the gas inlet pipe of the ion source;

[0007] The vacuum gauge detects the vacuum level inside the ion implanter chamber and uploads the data to the lower-level computer, which then uploads it to the upper-level computer.

[0008] The beam intensity parameters of the ion beam detected by the beam sensor are uploaded to the lower-level computer, and then uploaded to the upper-level computer by the lower-level computer.

[0009] The host computer outputs control parameters to the slave computer, which then controls the gas flow controller to control the intake volume of various gases.

[0010] In one embodiment, the beam sensor is a Faraday cylinder.

[0011] In one embodiment, the lower-level machine is also connected to the pneumatic valves, power switch, and molecular pump switch of the ion implanter.

[0012] In one embodiment, the lower-level machine is also connected to the beam generator motor of the ion implanter.

[0013] In one embodiment, the host computer includes a server consisting of at least one computer; wherein the server communicates with the slave computer via a network.

[0014] In one embodiment, the server communicates with the client terminal via a network; wherein the client terminal interacts through a user interface.

[0015] In one embodiment, the lower-level machine includes a programmable logic controller.

[0016] In one embodiment, the programmable logic controller (PLC) is further connected to a gateway module; the PLC communicates with the server through the gateway module.

[0017] In one embodiment, the ion implanter is a hydrogen-helium coaxial ion implanter;

[0018] The gas input to the ion source includes hydrogen and helium;

[0019] The gas flow controller includes a hydrogen flow meter and a helium flow meter.

[0020] A hydrogen-helium coaxial ion implanter includes: an ion implanter and an ion implanter control device.

[0021] The technical solution of this application has the following beneficial effects:

[0022] (1) It can achieve automated control, improve control efficiency, and improve the control accuracy of the ion implanter.

[0023] (2) It can be remotely controlled via the network, allowing multiple ion implanters to be remotely controlled by the client terminal by calling the server, which improves the convenience of control operation and reduces control costs.

[0024] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0025] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0026] Figure 1 This is a schematic diagram of the structure of an ion implanter control device according to one embodiment;

[0027] Figure 2 This is a schematic diagram of the structure of an ion implanter control device according to one embodiment;

[0028] Figure 3 This is a schematic diagram of the control device structure of one embodiment. Detailed Implementation

[0029] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0030] Those skilled in the art will understand that, unless otherwise stated, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the word “comprising” as used in this application’s specification means the presence of the stated feature, integer, step, or operation, but does not preclude the presence or addition of one or more other features, integers, steps, or operations.

[0031] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0032] The technical solution of the ion implanter control device of this application is applied to an ion implanter 30. For example, the ion implanter 30 may include an ion source 31, a transmission component 32, and an ion beam output component 33, etc. The ion implanter control device of this application can control the gas intake of the ion source 31 of the ion implanter 30, thereby controlling the generation of the desired ion beam, such as... Figure 1 As shown, Figure 1This is a schematic diagram of the control device structure of an ion implanter according to one embodiment, including: a host computer 10, a slave computer 20 connected to the host computer 10, a gas flow controller 301 disposed at the air inlet of the ion source 31 of the ion implanter 30, a vacuum gauge 302 disposed in the cavity of the ion implanter 30, and a beam current sensor 303 connected to the ion beam output component 33; wherein, the air inlet of the ion source 31 is provided with multiple air inlet pipes, and each gas flow controller 301 is respectively connected to the air inlet pipe of the ion source 31; the gas flow controllers 301 are shown as gas flow controllers 1 to 10 in the figure. n, n≥2, vacuum gauge 302 and beam sensor 303 are respectively connected to the lower computer 20. Vacuum gauge 302 detects the vacuum degree in the cavity of ion implanter 30 and uploads it to the lower computer 20, which then uploads it to the upper computer 10. Beam sensor 303 detects the beam intensity parameter of the ion beam and uploads it to the lower computer 20, which then uploads it to the upper computer 10. The upper computer 10 has a built-in control program. Through the control program, the upper computer 10 outputs control parameters to the lower computer 20, which then controls the gas flow controller 301 to control the intake volume of various gases.

[0033] In the above embodiment, based on the provided ion implanter control device architecture, the ion implanter 30 can achieve automated control. The host computer 10 provides parameter calculation and output functions to control the slave computer 20. The slave computer 20 executes the control of the air intake of the ion implanter 30, thereby adjusting the ion beam output beam current, improving control efficiency, and improving the control accuracy of the ion implanter 30.

[0034] For example, the host computer 10 can be implemented using computer equipment or industrial control computer, the slave computer 20 can be implemented using programmable logic controller (PLC), the beam sensor 303 can be a Faraday tube to detect the ion beam, and the programmable logic controller can realize the control function.

[0035] During use, the operator can input parameter data, such as the desired beam parameters, into the user interface of the host computer 10. The slave computer 20 can detect the gas intake, vacuum degree, and beam intensity parameters in real time through the gas flow controller 301, vacuum gauge 302, and Faraday cage, and send them to the host computer 10. After receiving the real-time status parameters of the ion implanter 30 sent by the slave computer 20, the host computer 10 will calculate the gas intake of various gases and the corresponding control parameters in real time and send them to the slave computer 20. The control program can be an industrial control program, such as a PID (proportional-integral-derivative control) program. The slave computer 20 controls each gas flow controller 301 to adjust the gas intake according to the control parameters, so that the ion implanter 30 outputs the desired ion beam.

[0036] The technical solution of this embodiment provides an architecture for realizing automated control functions. The lower-level computer 20 collects the real-time status parameters of the ion implanter 30, and the upper-level computer 10 processes and outputs control parameters to the lower-level computer 20 to adjust the gas flow controller 301, thereby improving control efficiency.

[0037] like Figure 2 As shown, Figure 2 This is a schematic diagram of the control device structure of an ion implanter according to another embodiment. The ion implanter 30 in this embodiment is a hydrogen-helium coaxial ion implanter 30; the gas input to the ion source 31 includes hydrogen and helium, the ion beam output component 33 outputs hydrogen ion and helium ion beams, and the gas flow controller 301 includes a hydrogen flow meter 301a and a helium flow meter 301b.

[0038] When the ion implanter 30 is a hydrogen-helium coaxial ion implanter 30, two gas flow controllers 301 are used to supply hydrogen and helium. By controlling the gas intake of the two gas flow controllers 301, the hydrogen ion and helium ion beams with the expected beam parameters are output.

[0039] Furthermore, the lower-level machine 20 is also connected to the pneumatic valve 304, power switch 305, molecular pump switch 306, beam clamp motor 307, etc. of the ion implanter 30, and reads the real-time status parameters of these components of the ion implanter 30 and controls them. Specifically, the lower-level machine 20 can control the power switch 305 of the ion source 31 implanter power supply, control the output voltage or current of the ion implanter 30, and read the voltage and current data in real time. The beam clamp is used to isolate a portion of the ions in the ion beam to play a screening role. The lower-level machine 20 controls the position of the beam clamp through the beam clamp motor 307 and reads the position data of the beam clamp motor 307 in real time.

[0040] In one embodiment, to improve the accuracy of the host computer 10 in processing control parameters, the technical solution of this application can also build a server 40 to provide corresponding computing power. The server 40 can provide control computing power for multiple ion implanters 30, such as ion implanters 1 to m in the figure. (Refer to...) Figure 3 As shown, Figure 3 This is a schematic diagram of the control device structure of one embodiment. The host computer 10 includes a server 40 consisting of at least one computer. The server 40 communicates with the slave computer 20 through a network. Preferably, the programmable logic controller is also connected to a gateway module. The programmable logic controller communicates with the server 40 through the gateway module, as shown in the figure, with gateway modules 1-m and ion implanters 1-m. Thus, the ion implanter 30 can access the network through the programmable logic controller and the gateway module to communicate with the server 40.

[0041] Furthermore, the server 40 can also communicate with the client terminal via the network; the operator can use the client terminal to receive the desired ion beam parameters input by the user through the user interface and then call the server 40 to calculate the control parameters of the gas intake for various gases; at the same time, the real-time status parameters of the ion implanter 30 can also be displayed to the operator through the user interface.

[0042] As described in the above embodiments, a network-based remote control architecture is provided, enabling multiple ion implanters 30 to be remotely controlled by a server 40 via client terminals. Operators can input desired beam parameters and view real-time status parameters of the ion implanters 30 through various client terminals, such as client terminals 1 to k in the figure. These client terminals can be smartphones, laptops, personal computers, and other terminal devices to achieve control and interaction functions, improving the convenience of control operations. At the same time, the server 40 can provide control over multiple ion implanters 30, which also reduces control costs.

[0043] For example, to achieve stronger computing power and higher computing accuracy, the computer device in this embodiment can also employ a neural network model. For example, a neural network model can be used to calculate control parameters for various gas intake volumes; for instance, an LSTM (Long Short-Term Memory) model can be used, wherein the neural network model can be trained using data from the ion implanter 30, and can predict the state change data of the ion implanter 30 at the corresponding time when the intake ratio of the ion source 31 is predicted at the next time step.

[0044] The technical solution of the above embodiments provides an architecture for realizing intelligent control functions. By running a computer with a neural network model on the server 40, powerful intelligent capabilities are provided, thereby improving the control accuracy of the ion implanter 30.

[0045] The following describes an embodiment of a hydrogen-helium coaxial ion implanter.

[0046] like Figures 1 to 3 As shown, the hydrogen-helium coaxial ion implanter provided in this embodiment includes an ion source 31, a transmission component 32, and an ion beam output component 33 connected in sequence. The ion source 31 is connected to multiple reactive gases and outputs ions. The transmission component 32 transmits the ions to the ion beam output component 33, which outputs an accelerated ion beam. The ion implanter 30 is controlled by the ion implanter control device of any of the aforementioned embodiments. For example, the ion implanter 30 in this embodiment can be a hydrogen-helium coaxial ion implanter 30, the transmission component 32 can include a magnetic analyzer, and the ion beam output component 33 can include an accelerator.

[0047] The ion implanter 30 of this application realizes automated control function, improves control efficiency, and increases the time for the ion implanter 30 to transmit beam to subsequent equipment; by using a computer that runs a neural network model on the server 40, powerful intelligent capabilities are provided to realize intelligent control function and improve the control accuracy of the ion implanter 30; the network-based remote control architecture allows multiple ion implanters 30 to be remotely controlled by the client terminal by calling the server 40, which improves the convenience of control operation and reduces control cost.

[0048] As illustrated in the above example, the operator can input the desired beam parameters into the user interface on different types of client terminals. The control device will then automatically adjust the ion beam output from the ion implanter 30 and feed back the adjusted ion beam to the user interface, thereby significantly improving the efficiency of the control operation and providing high control precision. This makes it suitable for widespread use in various ion implanters.

[0049] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. An ion implanter control apparatus, characterized by comprising: The application relates to an ion implantation machine control device. The gas flow controller (301) is connected to the gas inlet pipeline of the ion source (31); The vacuum gauge (302) detects the vacuum degree in the cavity of the ion implantation machine (30) and transmits the data to the lower computer (20) and then to the upper computer (10); The beam sensor (303) detects the beam intensity parameter of the ion beam and transmits the data to the lower computer (20) and then to the upper computer (10); The upper computer (10) outputs control parameters to the lower computer (20) to control the gas flow controller (301) to control the gas inlet amount of various gases. The beam sensor (303) is a Faraday cup.

2. The ion implanter control apparatus of claim 1, wherein, The lower computer (20) is further connected to the pneumatic valve, the power switch and the molecular pump switch of the ion implantation machine (30).

3. The ion implanter control apparatus of claim 1, wherein, The lower computer (20) is further connected to the beam blocking device motor of the ion implantation machine (30).

4. The ion implanter control apparatus of claim 1, wherein, The upper computer (10) comprises a server (40) composed of at least one computer.

5. The ion implanter control apparatus of claim 1, wherein, The server (40) communicates with the client terminal through a user operation interface.

6. The ion implanter control apparatus of claim 5, wherein, The lower computer (20) comprises a programmable logic controller.

7. The ion implanter control apparatus of claim 1, wherein, The programmable logic controller is further connected to a gateway module, and communicates with the server (40) through the gateway module.

8. The ion implanter control apparatus of claim 7, wherein, The gas input into the ion source (31) comprises hydrogen and helium; 9. The ion implanter control apparatus of claim 1, wherein, The gas flow controller (301) comprises a hydrogen flow meter (301a) and a helium flow meter (301b). The application further relates to an ion implantation machine (30) and the ion implantation machine control device.

10. A hydrogen-helium co-axial ion implanter, characterized by, The application further relates to an ion implantation machine (30) and the ion implantation machine control device. ​

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