Transfer device

Abstract

Disclosed is a transfer apparatus including: a light source portion configured to irradiate a laser beam; an upper stage disposed on a path of the laser beam and configured to support a transfer substrate; a lower stage configured to support a target substrate facing the transfer substrate; and a mask configured to be disposed on the target substrate and face the transfer substrate, in which the mask includes: a base layer in which a plurality of openings arranged in a first direction and a second direction crossing the first direction are defined, and in which a transfer region of the target substrate is defined; and an adhesive layer disposed on the base layer and configured to face a transfer substrate. The transfer device can effectively transfer the light-emitting element regardless of the shape of the unit region.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0043255 filed on March 29, 2024, as well as all the benefits accruing therefrom, the disclosure of which is incorporated herein in its entirety by reference. TECHNICAL FIELD

[0002] The present disclosure relates to a transfer device. BACKGROUND

[0003] The importance of display devices increases with the development of multimedia. In response to this, various types of display devices such as organic light emitting displays ("OLEDs"), liquid crystal displays ("LCDs"), and the like are being used.

[0004] A device that displays an image on a display device includes a display panel such as a light emitting display panel or a liquid crystal display panel. Among these display panels, a light emitting display panel can include a light emitting diode ("LED") such as an organic light emitting diode that uses an organic material as a fluorescent material or an inorganic light emitting diode that uses an inorganic material as a fluorescent material.

[0005] When a display panel is manufactured using an inorganic light emitting diode as a light emitting diode, a transfer device should be developed to transfer a micro LED to a display panel substrate. SUMMARY

[0006] Aspects and features of embodiments of the present disclosure provide a transfer device.

[0007] However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to one of ordinary skill in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below.

[0008] According to an embodiment, the mask includes a base layer configured to be disposed on the target substrate and to define a plurality of openings arranged in a first direction and a second direction intersecting the first direction therein, and an adhesive layer disposed on the base layer and configured to face the transfer substrate, wherein the plurality of openings define a transfer area of the target substrate.

[0009] The transfer area can correspond to a unit area of the target substrate, each of the openings can have a shape corresponding to a shape of the unit area in a plan view, and each of the openings can have an area corresponding to an area of the unit area.

[0010] Each of the openings of the mask can have an upper width equal to or wider than a lower width.

[0011] According to an embodiment, the transfer device includes a light source portion configured to irradiate a laser beam, an upper stage disposed on a path of the laser beam and configured to support a transfer substrate, a lower stage configured to support a target substrate facing the transfer substrate, and a mask configured to be disposed on the target substrate and face the transfer substrate, wherein the mask includes a base layer in which a plurality of openings arranged in a first direction and a second direction intersecting the first direction are defined, and a transfer region of the target substrate is defined, and an adhesive layer disposed on the base layer and configured to face the transfer substrate.

[0012] The transfer region can correspond to a unit region of the target substrate, wherein each of the openings can have a shape corresponding to a shape of the unit region in a plan view, and each of the openings can have an area corresponding to an area of the unit region.

[0013] An upper portion of each of the openings can have a width equal to or wider than a width of a lower portion thereof.

[0014] Each of the openings can have a side surface having a curvature.

[0015] The lower stage can include a chuck disposed at a top surface of the lower stage and capable of being adsorbed to a rear surface of the target substrate.

[0016] The mask can be disposed to be spaced apart from the transfer substrate.

[0017] The adhesive layer can be disposed to face a light emitting element disposed on the transfer substrate.

[0018] The mask can be disposed to be in contact with the target substrate.

[0019] The light source portion can include a light source configured to generate the laser beam, and an optical system disposed on a path of the laser beam and configured to guide the laser beam.

[0020] The light source portion can irradiate the laser beam using a laser-induced forward transfer ("LIFT") method or a laser lift-off ("LLO") method.

[0021] The mask can have a film shape, the base layer can include at least one of polyethylene terephthalate ("PET"), polyurethane ("PU"), polyimide ("PI"), polycarbonate ("PC"), polyethylene ("PE"), polypropylene ("PP"), polysulfone ("PSF"), polymethyl methacrylate ("PMMA"), triacetyl cellulose ("TAC"), and cyclic olefin polymer ("COP"), and the adhesive layer can include at least one of an acrylic adhesive material, a urethane adhesive material, and a silicone adhesive material.

[0022] The method of transferring a plurality of light emitting elements can include the steps of: disposing a transfer substrate and a target substrate to face each other and disposing a mask on the target substrate to face the transfer substrate; irradiating a light source to an interface between the transfer substrate and a plurality of light emitting elements disposed on the transfer substrate to transfer the plurality of light emitting elements onto the target substrate; and removing the mask to remove at least one light emitting element among the plurality of light emitting elements transferred to a region other than a transfer region defined by an opening in the mask.

[0023] In a plan view, the transfer region can correspond to a cell region of the target substrate, the opening can have a shape corresponding to a shape of the cell region, and the opening can have an area corresponding to an area of the cell region.

[0024] The mask can include an adhesive layer disposed at an upper portion of the mask, and the adhesive layer is disposed to face certain light emitting elements among the plurality of light emitting elements disposed on the transfer substrate, and in the step of transferring the plurality of light emitting elements onto the target substrate, some of the plurality of light emitting elements disposed on the transfer substrate can be transferred to the cell region through the opening, and the remaining portion of the plurality of light emitting elements can be transferred to the adhesive layer of the mask.

[0025] The plurality of light emitting elements transferred to the target substrate can form a plurality of groups, and the shape and area of each group can follow the shape and area of the opening.

[0026] In the step of disposing the transfer substrate and the target substrate to face each other and disposing the mask on the target substrate to face the transfer substrate, an upper stage grips a peripheral portion of the transfer substrate, and a lower stage supports one surface of the target substrate.

[0027] The lower stage uses a chuck disposed at a top surface of the lower stage to adsorb and support one surface of the target substrate.

[0028] According to the transfer device according to the embodiment, light emitting elements can be effectively transferred regardless of the shape of the cell region.

[0029] However, the effects of the present disclosure are not limited to the foregoing effects, and various other effects are included in the present specification. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a layout diagram illustrating a display device according to one embodiment.

[0031] Figure 2 is an example diagram illustrating one example of a pixel of Figure 1

[0032] Figure 3 is an example diagram illustrating another example of a pixel of Figure 1 ​​

[0033] Figure 4 is a cross-sectional view of an example of a display panel cut along line A-A' of Figure 2

[0034] Figure 5 is a schematic view of a transfer device according to one embodiment.

[0035] Figure 6 is a cross-sectional view of a schematic shape of a target substrate according to one embodiment.

[0036] Figure 7 is a plan view of a mask according to one embodiment.

[0037] Figure 8 is a cross-sectional view of a mask of one embodiment taken along line I-I' in Figure 7

[0038] Figure 9 is a flowchart illustrating a method of transferring a light-emitting element according to one embodiment.

[0039] Figures 10 to 15 is a cross-sectional view or a plan view illustrating a light-emitting element transfer method.

[0040] Figure 16 is a plan view of one surface of a target substrate to which a light-emitting element is transferred according to one embodiment.

[0041] Figure 17 is a schematic view of a transfer device according to other embodiments.

[0042] Figure 18 and Figure 19 is a plan view of a mask according to another embodiment.

[0043] Figures 20 to 22 is a cross-sectional view of a mask according to another embodiment.

[0044] Figure 23 is a diagram illustrating the effect of an inclined side surface of an opening according to one embodiment. DETAILED DESCRIPTION

[0045] ​​The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, "a," "an," "the," and "at least one" are not intended to exclude the presence of zero or more of the referenced item, unless the context clearly indicates otherwise. For example, "a member" has the same meaning as "at least one member." "At least one" should be interpreted in the same manner as "one or more." "Or" means "and / or." As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and "comprising," or "includes" and / or "including," when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and / or groups thereof.

[0046] It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements can be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.

[0047] Throughout the disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0048] Figure 1 is a layout diagram illustrating a display apparatus according to one embodiment. Figure 2 is an example diagram illustrating a pixel of Figure 1 . Figure 3 is an example diagram illustrating a pixel of Figure 1 .

[0049] Referring to Figures 1 to 3 , the display apparatus is a portable electronic apparatus (such as a mobile phone, a smart phone, a tablet personal computer, a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player ("PMP"), a navigation system, an ultra mobile PC ("UMPC"), etc.) that displays a video or a still image, and an electronic apparatus (such as a television, a laptop computer, a monitor, a billboard, an Internet of Things ("IOT") apparatus, and other products).

[0050] The display panel 100 can be formed in a planar shape of a rectangle having a long side in a first direction DR1 and a short side in a second direction DR2 intersecting the first direction DR1. Corners where the long side in the first direction DR1 and the short side in the second direction DR2 meet can be rounded to have a predetermined curvature or can be formed at right angles. The planar shape (i.e., the shape in a plan view) of the display panel 100 is not limited to a rectangle and can be formed in other polygonal shapes, a circular shape, or an elliptical shape. The display panel 100 can be formed to be flat, but is not limited thereto. For another example, the display panel 100 can include a curved portion having a constant curvature or a varying curvature disposed at an edge portion of the display panel 100. In addition, the display panel 100 can be formed to be flexible to be bent, curved, flexed, folded, or rolled.

[0051] The display panel 100 can further include pixels PX for displaying an image, scan wirings extending in the first direction DR1, and data lines extending in the second direction DR2. The pixels PX can be arranged in a matrix form in the first direction DR1 and the second direction DR2.

[0052] As shown in Figure 2 and Figure 3 , each of the pixels PX can include a plurality of sub-pixels RP, GP, and BP. In Figure 2 and Figure 3 , each of the pixels PX includes three sub-pixels RP, GP, and BP (that is, a first sub-pixel RP, a second sub-pixel GP, and a third sub-pixel BP), but embodiments of the disclosure are not limited thereto.

[0053] The first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be connected to one of the data lines and to at least one of the scan wirings.

[0054] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a planar shape of a rectangle, a square, or a diamond. For example, as shown in Figure 2 , each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a rectangular planar shape having a short side in the first direction DR1 and a long side in the second direction DR2. Alternatively, as shown in Figure 3 , each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a planar shape of a square or a diamond having sides of equal length in the first direction DR1 and the second direction DR2.

[0055] As shown in Figure 2As shown in FIG. 1, the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be arranged in the first direction DR1. Alternatively, one of the second sub-pixel GP and the third sub-pixel BP and the first sub-pixel RP can be arranged in the first direction DR1, and the other of the second sub-pixel GP and the third sub-pixel BP and the first sub-pixel RP can be arranged in the second direction DR2. For example, as shown in FIG. 1, the first sub-pixel RP and the second sub-pixel GP can be arranged in the first direction DR1, and the first sub-pixel RP and the third sub-pixel BP can be arranged in the second direction DR2. Figure 3 As shown in FIG. 1, the first sub-pixel RP and the second sub-pixel GP can be arranged in the first direction DR1, and the first sub-pixel RP and the third sub-pixel BP can be arranged in the second direction DR2.

[0056] Alternatively, one of the first sub-pixel RP and the third sub-pixel BP and the second sub-pixel GP can be arranged in the first direction DR1, and the other of the first sub-pixel RP and the third sub-pixel BP and the second sub-pixel GP can be arranged in the second direction DR2. Alternatively, one of the first sub-pixel RP and the second sub-pixel GP and the third sub-pixel BP can be arranged in the first direction DR1, and the other of the first sub-pixel RP and the second sub-pixel GP and the third sub-pixel BP can be arranged in the second direction DR2.

[0057] The first sub-pixel RP can include a first light emitting element that emits first light, the second sub-pixel GP can include a second light emitting element that emits second light, and the third sub-pixel BP can include a third light emitting element that emits third light. Here, the first light can be light in a red wavelength band, the second light can be light in a green wavelength band, and the third light can be light in a blue wavelength band. The red wavelength band can be a band of approximately 600 nanometers (nm) to 750 nm, the green wavelength band can be a band of approximately 480 nm to 560 nm, and the blue wavelength band can be a band of approximately 370 nm to 460 nm, but embodiments of the present disclosure are not limited thereto.

[0058] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can include an inorganic light emitting element having an inorganic semiconductor as a light emitting element that emits light. For example, the inorganic light emitting element can be a flip chip type micro light emitting diode (LED), but embodiments of the present disclosure are not limited thereto.

[0059] As shown in FIG. 1, the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be arranged in the first direction DR1. Alternatively, one of the second sub-pixel GP and the third sub-pixel BP and the first sub-pixel RP can be arranged in the first direction DR1, and the other of the second sub-pixel GP and the third sub-pixel BP and the first sub-pixel RP can be arranged in the second direction DR2. For example, as shown in FIG. 1, the first sub-pixel RP and the second sub-pixel GP can be arranged in the first direction DR1, and the first sub-pixel RP and the third sub-pixel BP can be arranged in the second direction DR2. Figure 2 and Figure 3As illustrated in FIG. 1, the area of the first sub-pixel RP, the area of the second sub-pixel GP, and the area of the third sub-pixel BP can be substantially the same, but embodiments of the present disclosure are not limited thereto. In another embodiment, at least one of the area of the first sub-pixel RP, the area of the second sub-pixel GP, and the area of the third sub-pixel BP can be different from the others. Alternatively, any two of the area of the first sub-pixel RP, the area of the second sub-pixel GP, and the area of the third sub-pixel BP can be substantially the same, and the other of the area of the first sub-pixel RP, the area of the second sub-pixel GP, and the area of the third sub-pixel BP can be different from the above two. Alternatively, the area of the first sub-pixel RP, the area of the second sub-pixel GP, and the area of the third sub-pixel BP can be different from each other.

[0060] Figure 4 is a cross-sectional view illustrating an example of a display panel cut along a line A-A' of Figure 2

[0061] Referring to Figure 4 , the display panel 100 can include a thin film transistor layer TFTL and a light emitting element LE disposed on a substrate SUB. The thin film transistor layer TFTL can be a layer in which a thin film transistor TFT is formed.

[0062] The thin film transistor layer TFTL includes an active layer ACT, a first gate layer GTL1, a second gate layer GTL2, a first data metal layer DTL1, a second data metal layer DTL2, a third data metal layer DTL3, and a fourth data metal layer DTL4. In addition, the thin film transistor layer TFTL includes a buffer film BF, a gate insulating film 130, a first interlayer insulating film 141, a second interlayer insulating film 142, a first planarization film 160, a first insulating film 161, a second planarization film 180, a second insulating film 181, and a third planarization film 190.

[0063] The substrate SUB can be a base member for supporting a display device. The substrate SUB can be a rigid substrate made of glass, but embodiments of the present disclosure are not limited thereto. In another embodiment, the substrate SUB can be a flexible substrate capable of being bent, folded, rolled, etc. In this case, the substrate SUB can include an insulating material such as a polymer resin such as polyimide (PI).

[0064] The buffer film BF can be disposed on one surface of the substrate SUB. The buffer film BF can be a film for preventing penetration of air or moisture. The buffer film BF can be composed of a plurality of inorganic films alternately stacked. For example, the buffer film BF can be formed as a multi-layer of inorganic films of one or more of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer, which are alternately stacked. The buffer film BF can be omitted.

[0065] ​An active layer ACT can be provided over the buffer film BF. The active layer ACT can include a silicon semiconductor such as polysilicon, single crystal silicon, low-temperature polysilicon, and amorphous silicon, or can include an oxide semiconductor.

[0066] The active layer ACT can include a channel TCH of a thin film transistor TFT, a first electrode TS, and a second electrode TD. The channel TCH of the thin film transistor TFT can be a region which is overlapped with a gate electrode TG of the thin film transistor TFT in a third direction DR3 which is a thickness direction of the substrate SUB. The first electrode TS of the thin film transistor TFT can be provided on one side of the channel TCH, and the second electrode TD can be provided on the other side of the channel TCH. The first electrode TS and the second electrode TD of the thin film transistor TFT can be regions which are not overlapped with the gate electrode TG in the third direction DR3. The first electrode TS and the second electrode TD of the thin film transistor TFT can be conductive regions in which a silicon semiconductor or an oxide semiconductor is doped with ions.

[0067] A gate insulating film 130 can be provided over the active layer ACT. The gate insulating film 130 can be formed of an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0068] A first gate layer GTL1 can be provided over the gate insulating film 130. The first gate layer GTL1 can include the gate electrode TG of the thin film transistor TFT and a first capacitor electrode CAE1. The first gate layer GTL1 can be formed as a single layer or a plurality of layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0069] A first interlayer insulating film 141 can be provided over the first gate layer GTL1. The first interlayer insulating film 141 can be formed of an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0070] A second gate layer GTL2 can be provided over the first interlayer insulating film 141. The second gate layer GTL2 can include a second capacitor electrode CAE2. The second gate layer GTL2 can be formed as a single layer or a plurality of layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0071] A second interlayer insulating film 142 can be provided over the second gate layer GTL2. The second interlayer insulating film 142 can be formed of an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0072] A first data metal layer DTL1 including a first connection electrode CE1, a first sub-pad (also referred to as "pad" or "solder pad"), and a data line can be provided on the second interlayer insulating film 142. The data line can be integrally formed with the first sub-pad, but embodiments of the present disclosure are not limited thereto. The first data metal layer DTL1 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0073] The first connection electrode CE1 can be connected to the first electrode TS or the second electrode TD of the thin film transistor TFT through a first contact hole CT1 that penetrates the gate insulating film 130, the first interlayer insulating film 141, and the second interlayer insulating film 142.

[0074] A first planarization film 160 can be provided on the first data metal layer DTL1 to flatten a step caused by the active layer ACT, the first gate layer GTL1, the second gate layer GTL2, and the first data metal layer DTL1. The first planarization film 160 can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like.

[0075] A second data metal layer DTL2 can be provided on the first planarization film 160. The second data metal layer DTL2 can include a second connection electrode CE2 and a second sub-pad. The second connection electrode CE2 can be connected to the first connection electrode CE1 through a second contact hole CT2 that penetrates the first insulating film 161 and the first planarization film 160. The second data metal layer DTL2 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0076] A second planarization film 180 can be provided on the second data metal layer DTL2. The second planarization film 180 can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like.

[0077] A third data metal layer DTL3 can be provided on the second planarization film 180. The third data metal layer DTL3 can include a third connection electrode CE3 and a third sub-pad. The third connection electrode CE3 can be connected to the second connection electrode CE2 through a third contact hole CT3 that penetrates the second insulating film 181 and the second planarization film 180. The third data metal layer DTL3 can be formed as a single layer or multiple layers of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0078] A third planarization film 190 can be provided on the third data metal layer DTL3. The third planarization film 190 can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like.

[0079] A fourth data metal layer DTL4 can be provided on the third planarization film 190. The fourth data metal layer DTL4 can include an anode pad electrode APD, a cathode pad electrode CPD, and a fourth sub-pad. The anode pad electrode APD can be connected to the third connection electrode CE3 through a fourth contact hole CT4 that penetrates the third planarization film 190. The cathode pad electrode CPD can be supplied with a first power voltage that can be a low potential voltage. The fourth data metal layer DTL4 can be formed as a single layer or a multi-layer of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0080] The light emitting element LE is illustrated as a flip chip type micro-LED in which the first and second contact electrodes CTE1 and CTE2 are disposed opposite to the anode pad electrode APD and the cathode pad electrode CPD, but is not limited thereto. In another embodiment, the light emitting element LE can be an inorganic light emitting element made of an inorganic material such as GaN. The light emitting element LE can have a length in the first direction DR1, a length in the second direction DR2, and a length in the third direction DR3, respectively, of several micrometers to several hundred micrometers. For example, the light emitting element LE can have a length in the first direction DR1, a length in the second direction DR2, and a length in the third direction DR3 of approximately 100 µm or less.

[0081] The light emitting element LE can be formed by growth on a semiconductor substrate such as a silicon wafer. Each of the light emitting elements LE can be transferred directly from the silicon wafer to the anode pad electrode APD and the cathode pad electrode CPD of the substrate SUB. In this case, the first contact electrode CTE1 and the anode pad electrode APD can be bonded to each other by a bonding process. Also, the second contact electrode CTE2 and the cathode pad electrode CPD can be bonded to each other by a bonding process. The first contact electrode CTE1 and the anode pad electrode APD can be electrically connected to each other by a bonding electrode 23. In addition, the second contact electrode CTE2 and the cathode pad electrode CPD can be electrically connected to each other by the bonding electrode 23.

[0082] In one example, the bonding electrode 23 can be provided on one surface of the light emitting element LE. The bonding electrode 23 can be a bonding material using a pressurized fusion bonding of a laser. Here, the pressurized fusion bonding refers to a state in which the bonding electrode 23 is fused under heating to melt the light emitting element LE, the anode pad electrode APD, and the cathode pad electrode CPD and fusion-mix and cool and solidify at the end of the laser supply. The light emitting element LE, the anode pad electrode APD, and the cathode pad electrode CPD maintain electrical conductivity while cooling and solidifying from the fusion-mixed state, so that the anode pad electrode APD, the cathode pad electrode CPD, and the light emitting element LE can be electrically and physically connected, respectively. Accordingly, the bonding electrode 23 can be provided on the first contact electrode CTE1 and the second contact electrode CTE2 of the light emitting element LE.

[0083] The bonding electrode 23 can include, for example, Au, AuSn, PdIn, InSn, NiSn, Au-Au, AgIn, AgSn, Al, Ag, or a carbon nanotube (CNT). Each of these can be used alone or two or more in combination.

[0084] Each of the light emitting elements LE can be a light emitting structure including a substrate substrate SSUB, an n-type semiconductor NSEM, an active layer MQW, a p-type semiconductor PSEM, a first contact electrode CTE1, and a second contact electrode CTE2.

[0085] The substrate substrate SSUB can be a sapphire substrate, but embodiments of the present disclosure are not limited thereto.

[0086] The n-type semiconductor NSEM can be provided on one surface of the substrate substrate SSUB. For example, the n-type semiconductor NSEM can be provided on a bottom surface of the substrate substrate SSUB. The n-type semiconductor NSEM can be made of GaN doped with an n-type conductive dopant such as Si, Ge, Sn, or the like.

[0087] The active layer MQW can be provided on a portion of one side of the n-type semiconductor NSEM. The active layer MQW can include a material having a single quantum well structure or a multi quantum well structure. When the active layer MQW includes a material having a multi quantum well structure, the active layer MQW can have a structure in which a plurality of well layers and barrier layers are alternately stacked. At this time, the well layer can be formed of InGaN, the barrier layer can be formed of GaN or AlGaN, but is not limited thereto. Alternatively, the active layer MQW can be a structure in which a semiconductor material having a large band gap and a semiconductor material having a small band gap are alternately stacked on top of each other, or can include three or five different semiconductor materials according to a wavelength band of light emitted.

[0088] In one embodiment of the present disclosure, a flip chip type light emitting element is described as an example, but the present disclosure is not limited thereto, and a vertical light emitting element can also be used.

[0089] In addition, the transfer substrate in the present disclosure can be a relay substrate in which a plurality of light emitting elements have been transferred from a growth substrate on which a plurality of light emitting elements have been grown, or a substrate in which a plurality of light emitting elements can be transferred to a target substrate. Hereinafter, in the present disclosure, the terms transfer substrate and relay substrate can be used interchangeably with the same meaning.

[0090] Figure 5 is a schematic view showing a transfer apparatus according to one embodiment.

[0091] The transfer apparatus TRD according to one embodiment can be used for manufacturing a display panel 100 (refer to Figure 4 ). For example, the transfer apparatus TRD can be used in a transfer process to transfer light emitting elements LE to a circuit board.

[0092] The transfer apparatus TRD can transfer a plurality of light emitting elements LE arranged on a transfer substrate S to a target substrate T.

[0093] Referring to Figure 5 , the transfer apparatus TRD can include a light source portion 40, an upper stage 50, a lower stage 60, a mask 200, and a control portion 70.

[0094] The light source portion 40 can include a light source 41 and an optical system 42.

[0095] The light source 41 generates a laser beam L. For example, the light source 41 can be a laser oscillator. For example, the laser oscillator can be a light source for irradiating a wavelength and energy required for a laser-induced forward transfer (LIFT) process to a processing surface, which is an interface between one surface (e.g., a bottom surface) of the transfer substrate S and the light emitting element LE.

[0096] The laser oscillator provides a driving force to transfer the light emitting element LE from the transfer substrate S to the target substrate T. If the laser beam pulse parameters are appropriately selected, the laser pulse separates the light emitting element LE from the transfer substrate S and places it on the target substrate T.

[0097] The optical system 42 can be disposed on an optical path and direct the path of the laser beam L generated from the light source 41 in a predefined spatial pattern, thereby simultaneously directing a plurality of output beams of the laser. For example, the optical system 42 can include one or more optical lenses, and the optical system 42 can be disposed between the light source 41 and the transfer substrate S.

[0098] In one embodiment, the optical system 42 can include a spatial light modulator ("SLM") or a digital micromirror device ("DMD"). The optical system 42 can receive a single light beam generated by the light source 41 and split it into a plurality of laser beams L to generate a multi-beam.

[0099] In one embodiment, a beam shaper is not shown, but the beam shaper can be positioned between the light source 41 and the optical system 42. The beam shaper can be used to change a collimated Gaussian input beam emitted from the light source 41 into a flat-top beam having a uniform intensity.

[0100] The upper stage 50 supports the transfer substrate S. For example, the upper stage 50 can include a clamp or the like. The upper stage 50 can be held by holding a peripheral portion of the transfer substrate S. The upper stage 50 can support and move the transfer substrate S in the in-plane direction to align the position thereof. In addition, the upper stage 50 can have a function of adjusting the height of the transfer substrate S in the vertical direction.

[0101] The transfer substrate S can have, for example, light emitting elements LE transferred to a surface thereof, and can be driven on two axes in the planar direction by the upper stage 50. The light emitting elements LE transferred to the transfer substrate S can be arranged by transferring micro LED chips on an epitaxial ("EPI") wafer through a laser-induced forward transfer ("LIFT") process, and a plurality of light emitting elements LE can be arranged adjacent to each other and aligned up and down and left and right. The transfer substrate S can be a rigid substrate or a flexible film.

[0102] The lower stage 60 can support the target substrate T.

[0103] The lower stage 60 can provide a seating surface on which the target substrate T is mounted, and the seating surface can be parallel to the first direction DR1 and the second direction DR2.

[0104] In one embodiment, the lower stage 60 can include a chuck 60-C that is one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck at one surface (e.g., a top surface) of the lower stage 60. The lower stage 60 can fix the target substrate T by the chuck 60-C. The lower stage 60 can maintain and support a function of aligning the target substrate T by moving the target substrate T in the in-plane direction. In addition, the lower stage 60 can have a function of adjusting the height of the target substrate T in the vertical direction.

[0105] The target substrate T can be disposed opposite the transfer substrate S, and can be driven by the lower stage 60 on two axes in a planar direction. At this time, the target substrate T can be aligned with the transfer substrate S, and then transferred together with the lower stage 60. In addition, the target substrate T and the transfer substrate S can be independently driven by different stages 50 and 60 to achieve relative movement. The target substrate T can be a rigid substrate, a flexible film, or a three-dimensional shape.

[0106] The mask 200 can be disposed on the target substrate T during the transfer process. In one embodiment, the base layer 210 of the mask 200 can be in contact with the target substrate T during the transfer process.

[0107] The mask 200 can mask some areas on the target substrate T and not mask some areas during the transfer process. In this way, the unmasked some areas can be a transfer area in which the light emitting elements LE can be transferred. That is, the mask 200 can have a pattern defining the transfer area.

[0108] The mask 200 includes the base layer 210 and the adhesive layer 220, and can have a film shape.

[0109] The base layer 210 can be made of polyethylene terephthalate (PET), polyurethane (PU), polyimide (PI), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polysulfone (PSF), polymethyl methacrylate (PMMA), triacetyl cellulose (TAC), cyclic olefin polymer (COP), or the like.

[0110] The adhesive layer 220 can be disposed on one surface (e.g., a top surface) of the base layer 210. The adhesive layer 220 can be made of an adhesive or an adhesive material, and the adhesive can include, for example, an optically clear adhesive ("OCA"), a pressure sensitive adhesive ("PSA"), or the like, and the adhesive material can include, for example, an acrylic adhesive material, a urethane adhesive material, or a silicone adhesive material.

[0111] The adhesive layer 220 can have a pattern such that an arrangement of a plurality of light emitting elements LE defines a transfer area.

[0112] The adhesive layer 220 can define an opening 220-O (see Figure 7 ) formed in the transfer area therein. The size of the opening 220-O can be the same as a unit area corresponding to 100 of each display panel ( Figure 1 ).

[0113] Since the mask 200 defines the openings 220-O corresponding to the unit regions corresponding to the display panel 100, the light emitting elements LE can be arranged only in the unit regions even if the laser beams L simultaneously irradiate over an area larger than the display panel 100 (for example, the laser beams L are surface light sources).

[0114] Further, in one embodiment, the shape and position of the openings 220-O are easily formed in the mask 200, thereby enabling simultaneous transfer to a plurality of unit regions regardless of the shape of the unit regions.

[0115] In addition, in one embodiment, the mask 200 is not disposed on the upper surface or the lower surface of the transfer substrate S, but is disposed on the target substrate T. In this case, since the mask 200 is not disposed on the optical path, damage to the light source part 40 caused by reflection of light from the mask 200 or the like can be minimized.

[0116] The control part 70 can include a memory and a processor. The memory can be implemented as at least one of a flash type, a ROM, a RAM, a hard disk type, a memory of a multimedia card micro and a card type (for example, an SD or an XD memory, etc.).

[0117] The memory is electrically connected to the processor so that signals and information can be transmitted to and from the processor. Accordingly, the memory can store the characteristic information of the plurality of micro LEDs that have been input or irradiated, and transmit the stored characteristic information to the processor.

[0118] The processor controls the overall operation of the transfer device TRD. That is, the processor is electrically connected to the light source part 40, the upper stage 50, and the lower stage 60 to control each configuration.

[0119] For example, the processor can control the light source part 40, the upper stage 50, and the lower stage 60 to transfer the plurality of micro LEDs arranged on the transfer substrate S to the target substrate T. The processor is not limited to control all components by a single processor, but can control each component of the transfer device TRD using a plurality of independent processors.

[0120] Here, the processor can include one or more of a central processing unit ("CPU"), a controller, an application processor ("AP"), a communication processor ("CP"), and an ARM processor.

[0121] In addition, the processor can be electrically connected to the memory and can use the characteristic information of the plurality of micro LEDs stored in the memory. The characteristic information of the plurality of micro LEDs can be data for securing uniformity of overall arrangement when transferred to the target substrate T.

[0122] In one embodiment, the processor checks characteristics of the plurality of micro-LEDs formed on the red, green, and blue growth substrates, and analyzes the brightness and wavelength of the micro-LEDs for each region of each growth substrate. The results of the analysis in this way can be stored in the memory.

[0123] Based on the analysis results, when the plurality of red, green, and blue micro-LEDs are arranged from each growth substrate to the relay substrate or the temporary substrate, the combination for each position for the optimal arrangement is simulated in view of uniformity, etc.

[0124] Once the optimal arrangement of the number of red, green, and blue micro-LEDs to be disposed on the temporary substrate or the transfer substrate S is established through the simulation, the processor can form a data map based on this. The data map can be stored in the memory.

[0125] Then, based on the data map, the micro-LEDs of each growth substrate can be transferred to the corresponding temporary substrate or the transfer substrate S using the LIFT method.

[0126] Figure 6 is a cross-sectional view showing a schematic shape of a target substrate according to one embodiment.

[0127] Referring to Figure 6 , the target substrate T can be a backplane substrate (e.g., the backplane substrate 110 of each display panel 100 of Figure 4 ). Each unit region CELA can include a plurality of light emitting regions, and one or more light emitting elements LE can be disposed in each light emitting region. Accordingly, a plurality of light emitting element arrays can be disposed in each unit region CELA.

[0128] The target substrate T can be a backplane substrate 110 for simultaneously manufacturing a plurality of display panels 100.

[0129] Figure 7 is a plan view of a mask according to one embodiment. Figure 8 is a cross-sectional view of the mask of one embodiment taken along the line I-I' in Figure 7 . As used herein, the "plan view" is a view in the thickness direction (i.e., the third direction DR3) of the mask 200.

[0130] Referring to Figure 7 and Figure 8 , the mask 200 includes a base layer 210 and an adhesive layer 220 disposed on the base layer 210.

[0131] The base layer 210 can define a plurality of openings 220-O. Each opening 220-O can define a transfer area TA. Each opening 220-O can be disposed at a first distance D1 from an adjacent opening 220-O. The transfer area TA can correspond to a cell area CELA of the target substrate T. The first distance D1 can be wider than a width of the light emitting element LE, but is not limited thereto.

[0132] In one embodiment, each opening 220-O can have a size corresponding to an area of the backplane substrate 110 (e.g., an area corresponding to an area of the backplane substrate 110) to allow a plurality of light emitting elements LE to be disposed in the cell area CELA of the target substrate T. Further, each opening 220-O can have a shape corresponding to a shape of the backplane substrate 110 or a shape of the cell area CELA in a plan view. For example, when the backplane substrate 110 or the cell area CELA is circular, each opening 220-O can be formed in a circular shape.

[0133] A shape of the adhesive layer 220 can follow a shape of the base layer 210. For example, if the base layer 210 is a square in a plan view, the adhesive layer 220 can also be a square, and if the base layer 210 is circular, the adhesive layer 220 can also be circular. An area of the adhesive layer 220 can be less than or equal to an area of the base layer 210 in a plan view.

[0134] In one embodiment, an area of the adhesive layer 220 can be equal to or less than an area of the base layer 210. The adhesive layer 220 can define an opening overlaid with the opening 220-O in the base layer 210 in a plan view. The opening in the adhesive layer 220 can be the same as the opening 220-O in the base layer 210 in a cross-sectional view and a plan view. Accordingly, the mask 200 can define an opening penetrating the base layer 210 and the adhesive layer 220.

[0135] A side surface of the opening 220-O in the base layer 210 can have a rectangular shape in a cross-section. An angle between a bottom surface of the base layer 210 and a side surface of the base layer 210 connected to the bottom surface can be substantially a right angle. Accordingly, side surfaces of the openings 220-O in the base layer 210 adjacent in the first direction DR1 can be substantially perpendicular to the first direction DR1.

[0136] In the present disclosure, "in a plan view" is defined as viewed in a normal direction of a plane defined by the first direction DR1 and the second direction DR2 (i.e., in a plan view). In the present disclosure, "in a cross-section" is defined as viewed in the first direction DR1 or the second direction DR2.

[0137] Figure 9 is a flowchart illustrating a method of transferring a light emitting element according to one embodiment. Figures 10 to 15is a cross-sectional view or a plan view showing a light emitting element transfer method. Figure 10 、 Figures 12 to 15 A cross-sectional view of a transfer substrate and a target substrate according to a transfer order of light emitting elements is shown. Figure 11 is a plan view showing one surface of a transfer substrate according to an embodiment.

[0138] Figures 10 to 15 Mainly, a mask 200, a light emitting element LE, a transfer substrate S, and a target substrate T, which can correspond to the mask 200, the light emitting element LE, the transfer substrate S, and the target substrate T described with reference to Figures 5 to 8 , respectively, are shown. Hereinafter, a method of transferring the light emitting element LE shown in Figure 9 will be described. Figures 10 to 15

[0139] With reference to Figure 10 , the target substrate T and the transfer substrate S are disposed to face each other, and the mask 200 is disposed on the target substrate T at a distance from the transfer substrate S (S110 in Figure 9 ).

[0140] With reference to Figure 11 , a plurality of light emitting elements LE can be arranged in a grid-like arrangement at regular intervals P1 in a column direction (i.e., the second direction DR2) and at regular intervals P2 in a row direction (i.e., the first direction DR1) on one surface F (e.g., a bottom surface) of the transfer substrate S.

[0141] One surface F of the transfer substrate S can be disposed to face the target substrate T.

[0142] For example, with reference to Figure 5 , the upper stage 50 of the transfer device TRD can hold a peripheral portion of the transfer substrate S, and the lower stage 60 can fix a lower surface of the target substrate T by the chuck 60-C.

[0143] One surface F (e.g., a bottom surface) of the transfer substrate S on which the light emitting elements LE are disposed can be disposed to face the target substrate T. Accordingly, the plurality of light emitting elements LE can be disposed to face the target substrate T.

[0144] As described with reference to Figure 7 and Figure 8 , the mask 200 can include a plurality of openings 220-O defining a transfer area TA on a front surface.

[0145] ​The mask 200 can be disposed on the target substrate T such that the adhesive layer 220 of the mask 200 faces the light emitting elements LE. In one embodiment, the mask 200 is disposed to contact the target substrate T, but the disclosure is not limited thereto, and the mask 200 can be disposed at a distance from the target substrate T. Even when the mask 200 is disposed to be spaced apart from the target substrate T, the distance between the mask 200 and the target substrate T can be less than the height of the light emitting elements LE.

[0146] Referring to Figures 12 to 14 , the plurality of light emitting elements LE disposed on the bottom surface of the transfer substrate S are transferred by irradiating the laser beam L (S120 in Figure 9 ).

[0147] In one embodiment, as shown in Figure 12 , the laser beam L is irradiated to the plurality of light emitting elements LE disposed on the bottom surface of the transfer substrate S and the bottom surface of the transfer substrate S, and thus the plurality of light emitting elements LE are transferred to the first transfer area TA1 through the first opening 220-O1 of the mask 200. Figure 7

[0148] The light emitting elements LE that do not pass through the first opening 220-O1 in the mask 200 can be disposed on the adhesive layer 220 on the upper surface of the mask 200.

[0149] Then, as shown in Figure 13 , the transfer substrate S is moved to transfer the plurality of light emitting elements LE to the second transfer area TA2 through the second opening 220-O2 in the mask 200. Figure 7

[0150] For example, the transfer substrate S is moved to the upper stage 50 in the first direction DR1 or the second direction DR2, and the light emitting elements LE are transferred to the next transfer area TA.

[0151] In one embodiment, the transfer substrate S can have a smaller area than the target substrate T. After all of the light emitting elements LE disposed on the transfer substrate S are transferred to the target substrate T, if there is an additional transfer area TA on the target substrate T on which the light emitting elements LE have not been transferred, the transfer substrate S that has been transferred to the upper stage 50 can be replaced with a new transfer substrate S to continue the transfer.

[0152] As shown in Figure 14 , the transfer substrate S is moved to transfer the light emitting elements LE to the entire surface of the target substrate T.

[0153] Referring to Figure 15 , the mask 200 can be removed (S130 in Figure 9 ).

[0154] As shown in Figure 15 ​​As shown in FIG. 20, the mask 200 is removed, leaving the light emitting elements LE transferred on the target substrate T through the openings 220-O of the mask 200. By removing the mask 200, the light emitting elements LE transferred to regions other than the transfer region TA defined by the openings 220-O in the mask 200 can be removed. That is, only the light emitting elements LE disposed in the cell region CELA of the target substrate T are left.

[0155] The light emitting elements LE disposed on the adhesive layer 220 on the top surface of the mask 200 can also be removed.

[0156] Figure 16 is a plan view showing one surface on which light emitting elements of a target substrate are transferred according to one embodiment.

[0157] Referring to Figure 16 In the plan view, the plurality of light emitting elements LE transferred on the target substrate T form a plurality of clusters LEG, and the arrangement shape of the clusters LEG follows the arrangement shape of the plurality of openings 220-O of the mask 200.

[0158] For example, as Figure 7 and Figure 11 shown, assume that a mask 200 in which a plurality of openings 220-O are arranged in a grid-like arrangement at regular intervals PI in the column direction (i.e., the second direction DR2) and at regular intervals P2 in the row direction (i.e., the first direction DR1) and each opening 220-O is circular is used. In this case, as Figure 16 shown, the plurality of light emitting elements LE are arranged as clusters LEG to follow the shape of the openings 220-O, and the clusters LEG are arranged to follow the shape of the arrangement of the openings 220-O. For example, in the plan view, the shape of the first group LEG1 is formed circular by following the shape of the first opening 220-O1 in the first row and the first column of the mask 200. The plurality of clusters LEG are formed in a grid-like arrangement at regular intervals in the row direction and the column direction.

[0159] Figure 17 is a schematic view showing a transfer device according to other embodiments.

[0160] Figure 17 Unlike the transfer device TRD of Figure 5 , a laser lift-off (LLO) method is used to transfer the light emitting elements LE. In the embodiments described with reference to Figure 17 , the description above with reference to Figure 5 may be applied in the same manner except that the light source part 40 irradiates the laser beam L2 in the LLO method.

[0161] Unlike the LIFT method, the optical system 42 can irradiate the laser beam L2 to the entire predefined region. For example, the entire cell region CELA can be irradiated with the laser beam L2.

[0162] In this way, even when the entire region is irradiated at once instead of using multiple beams of the LLO method, the plurality of light emitting elements LE can be simultaneously transferred to the transfer region TA.

[0163] Figure 18 and Figure 19 is a plan view of a mask according to another embodiment. Figure 18 and Figure 19 differs from the mask 200 described with reference to Figure 7 and Figure 8 described in that the shape or arrangement of the openings 220-O of the mask 200. Except that the arrangement of the openings 220-O is such that the openings 220-O1L arranged in the first row and the openings 220-O2L arranged in the second row are not provided in the same column, the embodiment described with reference to Figure 7 and Figure 8 may be described as described above with reference to Figure 18 and Figure 19 described.

[0164] With reference to Figure 18 , the arrangement of the openings 220-O is such that the respective centers of the openings 220-O1L of the first row and the respective centers of the openings 220-O2L of the second row do not coincide with each other in the second direction DR2. In a view in the second direction DR2, the center of each of the openings 220-O2L in the second row can be provided between the openings 220-O1L in the first row. In this way, when the centers of the openings 220-O1L in the first row and the centers of the openings 220-O2L in the second row are arranged offset, there is an advantage that more cell regions CELA can be formed on the target substrate T compared to another case.

[0165] With reference to Figure 19 , the openings 220-O can have a square shape in the plane, i.e. in the plan view. As shown in Figure 19 , depending on the shape of the cell region CELA, the shape of the openings 220-O can change to various shapes such as not only to a circular shape and a rectangular shape but also to an elliptical shape and a hexagonal shape, etc.

[0166] According to one embodiment, regardless of the shape of the cell region CELA, the plurality of light emitting elements LE can be formed simultaneously throughout the entire cell region CELA.

[0167] Figures 20 to 22 is a sectional view showing a mask according to another embodiment.

[0168] Figures 20 to 22 The difference from the contents in Figure 8 is the cross-sectional shape of the openings 220-O of the mask 200. Except for the cross-sectional shape of the openings 220-O, the embodiments described with reference to Figures 20 to 22 are also well described with reference to Figure 7 and Figure 8 .

[0169] With reference to Figure 20 and Figure 22 , the base layer 210 differs from the base layer 210 of Figure 7 and Figure 8 in that the width of the openings 220-O increases from the top to the bottom of the base layer 210. As used herein, the "width" of the openings 220-O is measured in a direction parallel to the plane defined by the first direction DR1 and the second direction DR2.

[0170] With reference to Figure 20 , the side surfaces of the openings 220-O of the base layer 210 can have an inverted trapezoidal shape in cross-section. The width of the openings 220-O of the base layer 210 can decrease along the third direction DR3. Thus, the width of the bottom surface of the base layer 210 in the first direction DR1 can be smaller than the width of the top surface of the base layer 210 in the first direction DR1. The angle Θ between the bottom surface of the base layer 210 and the side surface of the base layer 210 connected to the bottom surface can be an obtuse angle exceeding 90 degrees.

[0171] With reference to Figure 21 and Figure 22 , the width of the openings 220-O of the base layer 210 decreases along the third direction DR3 but the side surfaces of the openings 220-O of the base layer 210 can have a curvature. As shown in Figure 21 , the side curvature of the openings 220-O of the base layer 210 can be formed to increase toward the top, and as shown in Figure 22 , the side curvature of the openings 220-O in the base layer 210 can be formed to decrease toward the top.

[0172] Figure 23 is a diagram showing the effect of the inclined side surfaces of the openings according to one embodiment.

[0173] With reference to Figure 23 , the form of the detachment of the light emitting elements can be examined in the LIFT method according to the shape of the laser beam.

[0174] In the case of a flat-top shaped laser beam L-1 in which the laser beam is uniformly irradiated on the irradiation surface, the laser beam L-1 is irradiated perpendicularly to the light emitting element LE1 and can be transferred to a desired position on the target substrate T. On the other hand, in the case of a Gaussian shaped laser beam L-2 or a tilted shaped laser beam L-3, the light emitting element LE2 or LE3 can not fall perpendicularly and can not be transferred to a desired position on the target substrate T. As Figures 20 to 22 As shown in FIG. 22B, when the width of the opening 220-O is formed to widen from the top to the bottom of the base layer 210, even when the Gaussian shaped laser beam L-2 or the tilted shaped laser beam L-3 is irradiated to the light emitting element LE1 to LE3, the light emitting element LE1 to LE3 can be disposed on the target substrate T along the side surface of the tilted opening 220-O.

[0175] However, the disclosed aspects are not limited to those set forth herein. The above and other aspects disclosed will become more fully understood from the detailed description, along with the appended claims and drawings.

Claims

1. A transfer device, characterized in that, The transfer device includes: The light source is configured to illuminate a laser beam; It is placed on the platform, positioned in the path of the laser beam, and configured as a support transfer substrate; The lower stage is constructed to support the target substrate facing the transfer substrate; and A mask is configured to be disposed on the target substrate and facing the transfer substrate. The mask includes: a substrate layer having a plurality of openings arranged in a first direction and a second direction intersecting the first direction, and defining a transfer region of the target substrate; and an adhesive layer disposed on the substrate layer and configured to face the transfer substrate.

2. The transfer device according to claim 1, characterized in that, The transfer region corresponds to the cell region of the target substrate. In the plane, each of the plurality of openings has a shape corresponding to the shape of the unit region, and each of the plurality of openings has an area corresponding to the area of ​​the unit region.

3. The transfer device according to claim 1, characterized in that, The width of the upper part of each of the plurality of openings is equal to or wider than the width of the lower part of each of the plurality of openings.

4. The transfer device according to claim 2, characterized in that, Each of the plurality of openings has a side surface with curvature.

5. The transfer device according to claim 1, characterized in that, The lower stage includes a chuck, which is disposed on the top surface of the lower stage and is capable of adsorbing onto the rear surface of the target substrate.

6. The transfer device according to claim 1, characterized in that, The mask is configured to be spaced apart from the transfer substrate.

7. The transfer device according to claim 1, characterized in that, The adhesive layer is configured to face the light-emitting element disposed on the transfer substrate.

8. The transfer device according to claim 1, characterized in that, The mask is configured to contact the target substrate.

9. The transfer device according to claim 1, characterized in that, The light source component includes: A light source, configured to generate the laser beam; and An optical system is positioned in the path of the laser beam and is configured to guide the laser beam.

10. The transfer device according to claim 1, characterized in that, The light source portion uses a laser-induced forward transfer method or a laser stripping method to irradiate the laser beam.

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