Triode with lead bracket anti-falling structure

Abstract

The utility model discloses a triode with a lead support anti-drop structure, which comprises an inverted U-shaped shell, a triode body inserted and mounted in the inverted U-shaped shell, and a double-angle type multi-lead anti-drop support mounted at the opening position of the bottom end of the inverted U-shaped shell, the upper surface of the double-angle type multi-lead anti-falling support is in contact with the bottom end plane of the triode body, and pins of the triode body penetrate out of the double-angle type multi-lead anti-falling support. According to the utility model, through the design of the inverted U-shaped shell, the triode body can be quickly inserted without complicated fixing or welding steps, the insertion matching mode greatly simplifies the assembly process, reduces the operation difficulty, improves the production efficiency, and can obviously reduce the assembly time and the labor cost in large-scale production.

Description

TECHNICAL FIELD

[0001] The utility model relates to triode technical field, concretely is a triode with lead support anti -drop structure. BACKGROUND

[0002] Triode is a kind of key semiconductor device, is widely used in electronic circuit, mainly for signal amplification, switch control, signal modulation and impedance matching etc. Its basic structure is composed of three semiconductor regions: emission area, base area and collector area, according to the structure different and divide into NPN type and PNP type. The emission area of NPN type triode is N type semiconductor, base area is P type semiconductor, collector area is N type semiconductor;PNP type is opposite. The working principle of triode is based on the movement of carrier (electron or hole), for example, when the emission junction is forward biased, the electrons of emission area diffuse to base area, most of the electrons pass through base area to reach collector area, and the strong electric field formed by collector junction reverse bias pulls electrons to the collector, forming collector current. Base current controls the number of electrons injected into the base area from the emission area, thereby controlling the collector current, realizing current amplification;Such as the application publication no. CN114883272A discloses a triode with lead support anti-drop structure, including injection molding shell, circuit board, protection assembly and electrically connected piece, the inner side of injection molding shell is equipped with four groups of sealing grooves, the inside of injection molding shell is installed with circuit board, the front of circuit board is installed with IC chip, the front of circuit board is installed with soldering piece on both sides, the bottom of injection molding shell is installed with three groups of protection assembly, protection tube is installed in protection assembly, it is installed with sealing groove in the inner side of injection molding shell, can be mutually engaged by the sealing groove between two injection molding shells to enhance the sealing property of injection molding shell gap, and after heat sealing to injection molding shell using thermoplastic process, the structural stability of device whole can be guaranteed;

[0003] However, the above technical scheme uses a closed shell structure to protect the triode and its pins, which requires high-precision machining process to ensure the close fit of the shell with the triode and its pins. This not only increases the processing difficulty, but also increases the production cost, especially under the trend of miniaturization, the size of the triode is getting smaller and smaller, and the requirement for processing precision is higher, otherwise it may lead to mismatch between the shell and the triode, affecting the overall performance, and the assembly process of the closed shell includes multiple steps, such as fixing of the triode, welding of the pins, sealing of the shell, etc. Each step needs to be operated accurately, increasing the complexity of the assembly process. UTILITY MODEL CONTENT

[0004] The purpose of this utility model is to provide a transistor with a lead support anti-detachment structure. The inverted U-shaped shell with an opening at the bottom is inserted into the transistor body. After the inverted U-shaped shell and the transistor body are inserted, the double-angled multi-lead anti-detachment bracket is installed at the bottom opening of the inverted U-shaped shell and protects the transistor body and pins, so as to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a transistor with a lead support anti-detachment structure, comprising an inverted U-shaped shell, a transistor body inserted and installed inside the inverted U-shaped shell, and a double-angled multi-lead anti-detachment bracket installed at the bottom opening of the inverted U-shaped shell. The upper surface of the double-angled multi-lead anti-detachment bracket is in contact with the bottom plane of the transistor body. The leads of the transistor body pass through the double-angled multi-lead anti-detachment bracket. Slots are provided on both the left and right outer walls of the inverted U-shaped shell, and L-shaped locking arms for interference fit with the slots are provided on the left and right outer walls of the transistor body.

[0006] Preferably, the front and rear outer walls of the inverted U-shaped shell are integrally formed with protruding plates, and the two sides inside the protruding plates are provided with fully penetrating positioning holes.

[0007] Preferably, the inverted U-shaped outer shell and the double-angled multi-lead anti-detachment bracket are made of hard plastic components.

[0008] Preferably, the double-angle multi-lead anti-detachment bracket includes a base plate that is inserted and installed at the bottom opening of the inverted U-shaped shell, wing plates integrally formed on both sides of the top of the base plate, and a hollow groove provided inside the base plate, the hollow groove allowing the leads of the transistor body to pass through.

[0009] Preferably, straight grooves are provided on both the front and rear outer walls of the inverted U-shaped outer shell.

[0010] Preferably, both sides of the bottom end of the wing plate are integrally formed with circular protrusions.

[0011] Compared with the prior art, the beneficial effects of this utility model are as follows: This transistor with a lead-wire support anti-detachment structure is connected to the transistor body via an inverted U-shaped shell with an opening at the bottom. After connection, it is fixed and protected by a double-angled multi-lead anti-detachment bracket. The inverted U-shaped shell design allows for quick insertion of the transistor body without complex fixing or soldering steps. This connection method greatly simplifies the assembly process, reduces operational difficulty, and improves production efficiency. Especially in large-scale production, it can significantly reduce assembly time and labor costs. Furthermore, the double-angled multi-lead anti-detachment bracket design allows for quick installation at the bottom opening of the inverted U-shaped shell without the need for additional fixing tools or complex operations. Secondly, the inverted U-shaped housing provides comprehensive physical protection for the transistor, preventing damage from external mechanical impacts, vibrations, or collisions. Simultaneously, the bi-angled multi-lead anti-detachment bracket further reinforces the connection between the inverted U-shaped housing and the transistor, ensuring stability even in harsh environments. Furthermore, after the inverted U-shaped housing is connected to the PCB board, the bi-angled multi-lead anti-detachment bracket effectively prevents the transistor pins from loosening or falling off under vibration or impact, ensuring the stability of the electrical connection. Finally, since the inverted U-shaped housing and the bi-angled multi-lead anti-detachment bracket are independent components, damaged parts can be replaced individually during maintenance, eliminating the need to replace the entire assembly. This allows for easy replacement of the transistor by simply removing the housing and bracket when it malfunctions. Attached Figure Description

[0012] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0013] Figure 2 This is a three-dimensional cross-sectional structural diagram of the present invention;

[0014] Figure 3 This is a side view of the structure of this utility model;

[0015] Figure 4 This is a schematic diagram of the front cross-sectional structure of this utility model;

[0016] Figure 5 This is a three-dimensional structural diagram of the transistor body of this utility model;

[0017] Figure 6 This is a schematic diagram of the inverted U-shaped shell and the double-angled multi-lead anti-detachment bracket of this utility model in their separated state.

[0018] In the diagram: 1. Inverted U-shaped outer shell; 101. Protruding plate; 102. Positioning hole; 2. Transistor body; 3. Double-angled multi-lead anti-detachment bracket; 301. Base plate; 302. Wing plate; 303. Hollowed-out groove; 304. Circular protrusion; 4. Slot; 5. L-shaped snap-fit ​​arm. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0020] Example 1, by Figures 1 to 4 The present invention includes an inverted U-shaped shell 1, a transistor body 2 installed inside the inverted U-shaped shell 1, and a double-angled multi-lead anti-detachment bracket 3 installed at the bottom opening of the inverted U-shaped shell 1. The upper surface of the double-angled multi-lead anti-detachment bracket 3 is in contact with the bottom plane of the transistor body 2. The leads of the transistor body 2 pass through the double-angled multi-lead anti-detachment bracket 3. Slots 4 are provided on both the left and right outer walls of the inverted U-shaped shell 1. L-shaped locking arms 5 are provided on the left and right outer walls of the transistor body 2 for interference fit with the slots 4.

[0021] The transistor body 2 is disassembled and engaged with the slots 4 on the left and right outer walls of the inverted U-shaped outer casing 1 through the L-shaped snap-fit ​​arm 5 on its outer wall. At this time, the inverted U-shaped outer casing 1 provides all-round physical protection for the transistor body 2, preventing it from being damaged by external mechanical impact, vibration or collision.

[0022] The inverted U-shaped housing 1 has integrally formed protrusions 101 on both the front and rear outer walls. The protrusions 101 have fully penetrating positioning holes 102 on both sides inside. The inverted U-shaped housing 1 and the double-angled multi-lead anti-detachment bracket 3 are made of hard plastic. After the inverted U-shaped housing 1, the transistor body 2 and the double-angled multi-lead anti-detachment bracket 3 are assembled, the inverted U-shaped housing 1 is bolted and fixed to the circuit board through the protrusions 101 and the positioning holes 102, so that the transistor body 2 can be stably protected by the inverted U-shaped housing 1 and the double-angled multi-lead anti-detachment bracket 3 after the welding is completed.

[0023] Example 2, based on Example 1, is... Figure 5 and Figure 6 The bi-angle multi-lead anti-detachment bracket 3 includes a base plate 301 that is inserted and installed at the bottom opening of the inverted U-shaped housing 1, wing plates 302 integrally formed on both sides of the top of the base plate 301, and a hollow groove 303 provided inside the base plate 301. The hollow groove 303 allows the pins of the transistor body 2 to pass through. When the bi-angle multi-lead anti-detachment bracket 3 is installed at the bottom opening of the inverted U-shaped housing 1, the base plate 301 contacts the bottom end of the transistor body 2, and the pins pass through the corresponding hollow groove 303, while the wing plate 302 contacts one side of the outer wall of the transistor body 2, thereby ensuring the installation stability of the transistor body 2 and preventing the transistor body 2 and the pins from falling off under external vibration or impact.

[0024] Straight slots are provided on both the front and rear outer walls of the inverted U-shaped shell 1. The straight slots on the outer walls of the inverted U-shaped shell 1 provide a good heat dissipation channel, allowing heat to be quickly dissipated through the straight slot openings, thus avoiding the problem of poor heat dissipation in the closed shell structure.

[0025] Both sides of the bottom end of the wing plate 302 are integrally formed with circular protrusions 304. After the inverted U-shaped shell 1 and the double-angled multi-lead anti-detachment bracket 3 are assembled, the bottom surface of the circular protrusions 304 is flush with the bottom surface of the protrusion plate 101, so as to facilitate the connection of the inverted U-shaped shell 1 and the double-angled multi-lead anti-detachment bracket 3 to the circuit board.

[0026] In this embodiment of the application, before assembly, the operator needs to prepare the necessary tools and materials, including the inverted U-shaped housing 1, the transistor body 2, the double-ended multi-lead anti-detachment bracket 3, screwdrivers, pliers, cleaning cloths, etc., ensuring all tools are in good condition for subsequent operations. It is also ensured that the inverted U-shaped housing 1, the transistor body 2, and the double-ended multi-lead anti-detachment bracket 3 are undamaged or defective, especially checking the pins of the transistor body 2 for integrity and the inverted U-shaped housing 1 for cracks or deformation. The transistor body 2 is aligned with the opening of the inverted U-shaped housing 1, ensuring the slot 4 is aligned with the L-shaped locking arm 5. The transistor body 2 is gently inserted into the inverted U-shaped housing 1 until the L-shaped locking arm 5 is fully inserted. During this process, the slot 4 and the L-shaped locking arm 5 are press-fitted. After the inverted U-shaped housing 1 is inserted, the operator needs to check its stability and confirm the transistor body's position. After the connection between transistor 2 and the inverted U-shaped housing 1 is secure, prepare to install the double-angled multi-lead anti-detachment bracket 3. Align the double-angled multi-lead anti-detachment bracket 3 with the bottom opening of the inverted U-shaped housing 1, ensuring that the inverted U-shaped housing 1 and the double-angled multi-lead anti-detachment bracket 3 are aligned. During this process, the pins of transistor body 2 will pass through the double-angled multi-lead anti-detachment bracket 3 to protect transistor body 2 and its pins. If the pins of transistor body 2 need to be soldered to the circuit board, the operator needs to prepare soldering tools, including solder and soldering iron, etc., insert the pins of transistor body 2 into the corresponding holes of the circuit board, ensure that the pins are well connected to the circuit board, and use the soldering iron to heat the solder and apply it to the connection between the pins and the circuit board to ensure a firm solder joint. At this time, the inverted U-shaped housing 1 is bolted to the circuit board. It is necessary to pre-drill holes in the circuit board corresponding to the inverted U-shaped housing 1 so that the transistor can be stably assembled.

Claims

1. A transistor with a lead support anti-detachment structure, characterized in that: The device includes an inverted U-shaped housing (1), a transistor body (2) installed inside the inverted U-shaped housing (1), and a double-angled multi-lead anti-detachment bracket (3) installed at the bottom opening of the inverted U-shaped housing (1). The upper surface of the double-angled multi-lead anti-detachment bracket (3) is in contact with the bottom plane of the transistor body (2). The leads of the transistor body (2) pass through the double-angled multi-lead anti-detachment bracket (3). Slots (4) are provided on the left and right outer walls of the inverted U-shaped housing (1). L-shaped locking arms (5) for interference fit with the slots (4) are provided on the left and right outer walls of the transistor body (2).

2. A transistor with a lead support anti-detachment structure according to claim 1, characterized in that: The inverted U-shaped outer shell (1) has protruding plates (101) integrally formed on both the front and rear outer walls, and the protruding plates (101) have fully penetrating positioning holes (102) on both sides inside.

3. A transistor with a lead wire support anti-detachment structure according to claim 2, characterized in that: The inverted U-shaped shell (1) and the double-angled multi-lead anti-detachment bracket (3) are made of hard plastic components.

4. A transistor with a lead support anti-detachment structure according to claim 3, characterized in that: The double-angle multi-lead anti-detachment bracket (3) includes a base plate (301) installed at the bottom opening of the inverted U-shaped shell (1), wing plates (302) integrally formed on both sides of the top of the base plate (301), and a hollow groove (303) provided inside the base plate (301), through which the pins of the transistor body (2) pass.

5. A transistor with a lead wire support anti-detachment structure according to claim 4, characterized in that: Straight slots are provided on both the front and rear outer walls of the inverted U-shaped shell (1).

6. A transistor with a lead support anti-detachment structure according to claim 4, characterized in that: Both sides of the bottom end of the wing plate (302) are integrally formed with circular protrusions (304).

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