Substrate tray for molecular beam epitaxy
By designing a combination of detachable outer and inner trays, the technology enables the application of epitaxial wafers of different sizes, solving the problems of high cost and low efficiency in existing technologies, and achieving cost reduction and efficiency improvement.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GRAIN TECH (XIAMEN) CO LTD
- Filing Date
- 2025-05-08
- Publication Date
- 2026-04-24
AI Technical Summary
Existing technologies cannot be applied to epitaxial wafers of different sizes, resulting in high manufacturing costs and low production efficiency.
Design a substrate tray for molecular beam epitaxy, including an outer tray and an inner tray, which can be detachably combined to accommodate epitaxial wafers of different sizes. The outer tray and the inner tray can each serve as a carrier, while a single outer tray can be used to carry epitaxial wafers of different sizes.
It reduced production costs, improved production efficiency, reduced material waste and processing time, and simplified the processing technology.
Smart Images
Figure CN224160742U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment, and in particular to a substrate tray for molecular beam epitaxy. Background Technology
[0002] Molecular beam epitaxy (MBE) is a physical deposition technique for compound semiconductor multilayer thin films. In an ultra-high vacuum environment, MBE technology precisely controls the migration of molecular or atomic beams of various elements at specific angles and rates on a heated substrate surface, ultimately growing an ordered crystalline thin film. In the mass production of MBE epitaxy, improving the production quality and efficiency of epitaxial wafers while reducing operating costs is crucial for the technology.
[0003] In the GaAs epitaxial wafer production field, current market demand is mainly concentrated on 4-inch and 6-inch epitaxial wafers. However, with the booming development of the semiconductor device market, the demand for small-sized GaSb, InP, and other epitaxial wafers has shown a significant growth trend. To meet this demand change, the industry's common practice is to process an additional batch of molybdenum trays specifically for small-sized epitaxial wafers. However, MBE-grade ultra-high purity molybdenum substrate material is extremely expensive, which undoubtedly increases production costs. Moreover, the high hardness of molybdenum material greatly increases the difficulty of processing substrate trays, further driving up manufacturing costs. At the same time, the long cycle of procuring and processing molybdenum trays affects production efficiency. Furthermore, producing batches of small-sized dedicated molybdenum trays would also result in a significant waste of molybdenum material.
[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Utility Model Content
[0005] (a) Technical problems to be solved
[0006] This application provides a substrate tray for molecular beam epitaxy, which can solve the problem of how to apply different sizes of epitaxial wafers in the prior art and reduce manufacturing costs.
[0007] (II) Technical Solution
[0008] To solve the above-mentioned technical problems, this application provides the following technical solution:
[0009] A substrate tray for molecular beam epitaxy is provided, the substrate tray for molecular beam epitaxy comprising: an outer tray and an inner tray;
[0010] The outer tray is provided with a first through hole, the first through hole has a circular cross-section perpendicular to the length direction, and the inner side is provided with a first step and a first circular step of a ring that blocks heat radiation.
[0011] The inner tray has two outer steps that are adapted to the first step and the first annular step respectively. The inner tray has a second through hole with a circular cross-section perpendicular to the length direction and a second step on the inner side. The diameter of the second through hole is smaller than the diameter of the first through hole.
[0012] When the inner tray and the outer tray are separated, the first through hole is used to accommodate the first epitaxial wafer, and the first step is used to support the first epitaxial wafer; when the inner tray is detachably embedded inside the first through hole of the outer tray, the outer step is supported by the first annular step and the first step, the second through hole is used to accommodate the second epitaxial wafer, and the second step is used to support the second epitaxial wafer.
[0013] In some embodiments, a second annular step is further provided inside the first through hole to restrict the movement of the blocking heat radiation ring, and the first step, the first annular step and the second annular step are arranged sequentially along the length direction of the first through hole.
[0014] In some embodiments, the inner side of the second through hole is further provided with a third annular step for blocking the heat radiation ring and a fourth annular step for restricting the movement of the heat radiation blocking ring. The second step, the third annular step and the fourth annular step are arranged sequentially along the length direction of the second through hole.
[0015] In some embodiments, when the inner tray is detachably embedded inside the first through hole of the outer tray, the end face of the inner tray is flush with the end face of the outer tray.
[0016] In some embodiments, the inner tray and the outer tray have the same thickness.
[0017] In some embodiments, the outer tray and the inner tray are molybdenum trays.
[0018] (III) Beneficial Effects
[0019] Compared with the prior art, the beneficial effects of the technical solution provided in this application include at least the following:
[0020] In this application, the substrate tray for molecular beam epitaxy allows for the following configuration: when the inner and outer trays are separated, the outer tray can accommodate a first epitaxial wafer through a first through-hole and support it through a first step. When the inner tray is embedded inside the first through-hole of the outer tray, the outer step supports it on the first circular step of the heat-blocking ring, forming a stable fit. The inner tray can also accommodate a second epitaxial wafer through a second through-hole and support it through a second step. In other words, the outer tray can serve as a carrier for the first epitaxial wafer independently, while the inner tray, after being embedded in the outer tray, can serve as a carrier for the second epitaxial wafer. Compared to the traditional method of using two separate trays to carry two different sizes of epitaxial wafers, this application's substrate tray for molecular beam epitaxy allows for free switching between large-size and small-size wafer epitaxial growth using a single outer tray. Specifically, when carrying a small-size second epitaxial wafer through the inner tray, the outer tray serves as the mounting base for the inner tray, saving materials and reducing manufacturing costs. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 This is an exploded view of the substrate tray used for molecular beam epitaxy in an embodiment of this application;
[0023] Figure 2 This is a schematic diagram of the inner tray being embedded in the outer tray in an embodiment of this application;
[0024] Figure 3 yes Figure 2 A sectional perspective view at section A;
[0025] Figure 4 This is a schematic diagram of an embodiment of the present application showing an anti-rotation block on the inner tray and an anti-rotation groove on the outer tray.
[0026] Figure label:
[0027] Outer tray 1, first through hole 11, first step 111, first annular step 112, second annular step 113, anti-rotation groove 114;
[0028] Inner tray 2, outer step 21, second through hole 22, second step 221, third annular step 222, fourth annular step 223, anti-rotation block 224.
[0029] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation
[0030] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.
[0031] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.
[0032] Existing substrate trays cannot accommodate epitaxial wafers of different sizes, and manufacturing a separate tray for each size of epitaxial wafer results in high manufacturing costs.
[0033] To address the aforementioned technical problems, this embodiment provides a substrate tray for molecular beam epitaxy. (See also...) Figure 1 and Figure 2 As shown, Figure 1 This is an exploded view of the substrate tray used for molecular beam epitaxy in an embodiment of this application. Figure 2 This is a schematic diagram of the inner tray being embedded in the outer tray in an embodiment of this application; Figure 3 yes Figure 2 Cross-sectional perspective view at section A.
[0034] The substrate tray for molecular beam epitaxy includes an outer tray 1 and an inner tray 2.
[0035] The outer tray 1 is provided with a first through hole 11. The cross-section of the first through hole 11 perpendicular to the length direction is circular, and a first step 111 is provided on the inner side. A first circular step 112 blocking the heat radiation ring is also provided on the inner side of the first through hole 11.
[0036] The inner tray 2 has two outer steps 21 on its outer side that are adapted to the first step 111 and the first annular step 112 respectively. The inner tray 2 has a second through hole 22. The cross-section of the second through hole 22 perpendicular to the length direction is circular, and the inner side has a second step 221. The diameter of the second through hole 22 is smaller than the diameter of the first through hole 11.
[0037] When the inner tray 2 is separated from the outer tray 1, the first through hole 11 is used to accommodate the first epitaxial wafer, and the first step 111 is used to support the first epitaxial wafer; when the inner tray 2 is detachably embedded inside the first through hole 11 of the outer tray 1, the outer step 21 is supported on the first step 111 and the first annular step 112, the second through hole 22 is used to accommodate the second epitaxial wafer, and the second step 221 is used to support the second epitaxial wafer.
[0038] In some embodiments, the outer tray 1 and the inner tray 2 are molybdenum trays; the outer diameter of the first epitaxial wafer is 6 inches, and the outer diameter of the second epitaxial wafer is 2 inches.
[0039] In some embodiments, a second annular step 113 is further provided inside the first through hole 11 to restrict the movement of the heat-blocking ring. The first step 111, the first annular step 112, and the second annular step 113 are arranged sequentially along the length of the first through hole 11. The heat-blocking ring is a ring structure with a certain thickness and diameter, and its material is selected as molybdenum or PBN. During installation, the heat-blocking ring is first placed into the first through hole 11, so that its lower end face contacts the first annular step 112. The first annular step 112 plays a preliminary role in blocking heat radiation, preventing excessive heat from being conducted from above to other areas within the first through hole 11. Then, the second annular step 113 further restricts the heat-blocking ring, preventing it from moving along its length within the first through hole 11. For example, the second annular step 113 forms a certain interference fit with the heat-blocking ring to ensure that the heat-blocking ring is stably fixed within the first through hole 11.
[0040] Similarly, the inner side of the second through hole 22 is also provided with a third annular step 222 for blocking the heat radiation ring, and a fourth annular step 223 for restricting the movement of the heat radiation blocking ring. The second step 221, the third annular step 222 and the fourth annular step 223 are arranged sequentially along the length direction of the second through hole 22.
[0041] In some embodiments, when the inner tray 2 is detachably embedded inside the first through hole 11 of the outer tray 1, the end face of the inner tray 2 is flush with the end face of the outer tray 1. During manufacturing, the end faces 12 of the inner tray 2 and the outer tray 1 are machined with high precision to ensure that their surface flatness error is within the allowable range. Simultaneously, during assembly, the inner tray 2 is embedded in the first through hole 11, and a certain preload is applied to ensure a tight fit between the inner tray 2 and the outer tray 1, ultimately achieving flush end faces 12. The advantage of this design is that it ensures that when the entire substrate tray holds the epitaxial wafer, the surface of the epitaxial wafer is on the same horizontal plane, which is beneficial for subsequent processing.
[0042] In some embodiments, the inner tray 2 and the outer tray 1 have the same thickness. The advantage of this design is that it simplifies the processing technology, reduces manufacturing costs, and ensures the overall structural stability of the inner tray 2 and the outer tray 1 during assembly and use, avoiding stress concentration and deformation problems caused by thickness differences.
[0043] See Figure 4 As shown, Figure 4 This is a schematic diagram of an embodiment of this application where the inner tray is provided with an anti-rotation block and the outer tray is provided with an anti-rotation groove. In order to prevent the inner tray 2 from rotating on the outer tray 1, the edge of the first through hole 11 is provided with an anti-rotation groove 114, and the edge of the inner tray 2 is provided with an anti-rotation block 224. When the inner tray 2 is placed into the first through hole 11, the anti-rotation block 224 is embedded in the anti-rotation groove 114, and the groove wall of the anti-rotation groove 114 blocks the rotation of the anti-rotation block, thereby restricting the rotation of the inner tray 2.
[0044] In some embodiments, the outer tray 1 is provided with at least two first through holes 11, which are spaced apart from each other. For example, the outer tray 1 is provided with four first through holes 11 arranged in a square.
[0045] In some embodiments, the first through hole 11 is provided with a detachable connecting assembly for securing the inner tray 2 within each first through hole 11. The detachable connecting assembly can employ existing pin connections, snap-fit connections, or other similar methods.
[0046] The molecular beam epitaxy (MBE) substrate tray of this application enables the use of at least two sizes of epitaxial wafers through a detachable combination of an outer tray 1 and an inner tray 2. When the inner tray 2 is separated from the outer tray 1, the outer tray 1 can serve as a carrier for the first epitaxial wafer; the inner tray 2, after being embedded in the outer tray 1, can serve as a carrier for the second epitaxial wafer. Compared to the traditional method of using two independent trays to carry two different sizes of epitaxial wafers, the MBE substrate tray of this application effectively reduces the amount of material used. For example, taking molybdenum material as an example, the material used to manufacture a traditional 4mm thick, 2-inch epitaxial outer tray is 6kg, while the material used to manufacture each inner tray of this application is only 0.69kg, significantly reducing material costs. At the same time, due to the reduction in material usage, energy consumption and processing time during the manufacturing process are also reduced accordingly, saving a significant amount of operating time and costs, and improving production efficiency.
[0047] In terms of improving production efficiency, the design of the substrate tray for molecular beam epitaxy makes the carrying and replacement of epitaxial wafers more convenient. Operators can quickly remove or insert the inner tray 2 from the outer tray 1, greatly reducing the time required for epitaxial wafer replacement.
[0048] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A substrate tray for molecular beam epitaxy, characterized in that, include: Outer pallet and inner pallet; The outer tray is provided with a first through hole, the first through hole has a circular cross-section perpendicular to the length direction, and the inner side is provided with a first step and a first circular step of a ring that blocks heat radiation. The inner tray has two outer steps that are adapted to the first step and the first annular step respectively. The inner tray has a second through hole with a circular cross-section perpendicular to the length direction and a second step on the inner side. The diameter of the second through hole is smaller than the diameter of the first through hole. When the inner tray and the outer tray are separated, the first through hole is used to accommodate the first epitaxial wafer, and the first step is used to support the first epitaxial wafer; when the inner tray is detachably embedded inside the first through hole of the outer tray, the outer step is supported by the first annular step and the first step, the second through hole is used to accommodate the second epitaxial wafer, and the second step is used to support the second epitaxial wafer.
2. The substrate tray for molecular beam epitaxy according to claim 1, characterized in that, The inner side of the first through hole is also provided with a second annular step to restrict the movement of the ring that blocks heat radiation. The first step, the first annular step and the second annular step are arranged sequentially along the length of the first through hole.
3. The substrate tray for molecular beam epitaxy according to claim 1, characterized in that, The inner side of the second through hole is also provided with a third annular step to block the heat radiation ring, and a fourth annular step to restrict the movement of the heat radiation blocking ring. The second step, the third annular step and the fourth annular step are arranged sequentially along the length of the second through hole.
4. The substrate tray for molecular beam epitaxy according to claim 1, characterized in that, When the inner tray is detachably embedded inside the first through hole of the outer tray, the end face of the inner tray is flush with the end face of the outer tray.
5. The substrate tray for molecular beam epitaxy according to claim 1, characterized in that, The inner tray has the same thickness as the outer tray.
6. The substrate tray for molecular beam epitaxy according to claim 1, characterized in that, The outer and inner trays are molybdenum trays.