Single crystal silicon rod testing tool and single crystal silicon rod electrical property testing system
By designing a combination of fixture body and detection probe, the problem of unstable human operation in the electrical performance testing of single crystal silicon rods was solved, achieving accuracy of test results and safety of probe, and improving detection efficiency and probe lifespan.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SICHUAN GOKIN SOLAR TECHNOLOGY CO LTD
- Filing Date
- 2025-05-20
- Publication Date
- 2026-04-24
AI Technical Summary
In existing electrical performance testing of monocrystalline silicon rods, instability in human operation can lead to probes not being in close contact with the silicon rod surface or test points not being accurately centered, resulting in deviations in test results and affecting product quality and production efficiency.
Design a single-crystal silicon rod testing tool, including a fixture body and a detection probe. The fixture body is radially limited to the single-crystal silicon rod by clamping pillars to ensure that the detection area of the detection probe is accurately aligned with the test point. The test is carried out by non-contact microwave reflection photoelectric attenuation method and non-contact eddy current measurement method.
This improves the accuracy of minority carrier lifetime and resistivity testing for monocrystalline silicon rods, reduces the risk of probe damage due to operational errors, and increases testing efficiency and probe lifespan.
Smart Images

Figure CN224163760U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of performance testing of monocrystalline silicon rods, and more specifically, to a testing tool and electrical performance testing system for monocrystalline silicon rods. Background Technology
[0002] With the rapid development of the semiconductor industry, single-crystal silicon rods, as an important component of semiconductor materials, require accurate measurement of their electrical performance parameters to ensure product quality. In existing technologies, the electrical performance testing of single-crystal silicon rods mainly includes two key indicators: minority carrier lifetime and resistivity. Minority carrier lifetime testing typically employs the non-contact microwave reflection photoelectric attenuation method, while resistivity testing uses the non-contact eddy current method to determine the resistivity of semiconductor silicon wafers. These testing methods require extremely high measurement accuracy; even the slightest deviation can lead to inaccurate test results.
[0003] In practice, employees need to hold the testing probe by hand to conduct tests. The test point is usually located at the center of the monocrystalline silicon rod, and the surface to be tested on the monocrystalline silicon rod is flat. However, due to the instability of human operation, there are instances where the probe is not in close contact with the silicon rod surface or the test point is not accurately located at the center. These operational errors can lead to significant deviations in the test results, specifically manifested as a lower minority carrier lifetime, a higher resistivity, or both a higher minority carrier lifetime and resistivity. These deviations not only affect the accuracy of the test data but may also lead to losses during subsequent processing of the silicon rod, adversely affecting product quality and production efficiency. Utility Model Content
[0004] The purpose of this invention is to provide a single-crystal silicon rod testing tool that can improve the accuracy of testing the minority carrier lifetime and resistivity of single-crystal silicon rods and improve testing efficiency.
[0005] Another objective of this invention is to provide a single-crystal silicon rod electrical performance testing system, which can improve the accuracy of testing the minority carrier lifetime and resistivity of single-crystal silicon rods and increase testing efficiency.
[0006] The technical solution of this utility model is implemented as follows:
[0007] A testing tool for monocrystalline silicon rods is used to test the minority carrier lifetime and resistivity of monocrystalline silicon rods. One end face of the monocrystalline silicon rod is the surface to be tested, and the central region of the surface to be tested is the test point to be tested, including:
[0008] The clamp body has a receiving cavity for accommodating a single crystal silicon rod, and the inner wall of the receiving cavity can be correspondingly fitted with the outer wall of the single crystal silicon rod to radially limit the movement of the single crystal silicon rod.
[0009] A detection probe is mounted on the fixture body. One side of the detection probe is a detection surface, which is a plane. The detection surface has a detection area for detecting a single crystal silicon rod. The detection surface is positioned corresponding to the receiving cavity, and the detection area is positioned corresponding to the center of the receiving cavity. After the single crystal silicon rod is placed in the receiving cavity, the detection surface can fit against the surface to be detected, and the detection area can correspond to the test point.
[0010] Furthermore, the fixture body includes a mounting ring and multiple clamping posts;
[0011] One side of the mounting ring is an inner mounting surface, and a plurality of clamping posts are respectively connected to the inner mounting surface. The plurality of clamping posts are arranged in parallel to each other and are distributed in a circular pattern. The space enclosed by the plurality of clamping posts is the receiving cavity.
[0012] Furthermore, the mounting ring is a circular ring, and the clamping posts are evenly arranged around the center of the mounting ring.
[0013] Furthermore, the inner circumferences of the plurality of clamping posts together form an inner circle, and the outer circumferences of the plurality of clamping posts together form an outer circle. The diameter of the inner circle is the same as the outer diameter of the single crystal silicon rod, and the diameter of the inner circle is not greater than the inner diameter of the mounting ring.
[0014] Furthermore, the diameter of the inner circle is the same as the inner diameter of the mounting ring and the outer diameter of the single-crystal silicon rod.
[0015] Furthermore, the clamping column adopts a cylindrical or plate-like structure.
[0016] Furthermore, the outer circle is the same as the outer diameter of the mounting ring.
[0017] Furthermore, the other side of the mounting ring is an outer mounting surface, and the detection probe is mounted on the outer mounting surface.
[0018] Furthermore, the detection surface of the detection probe is in contact with the outer mounting surface, and the detection area is located at the center of the mounting ring.
[0019] A single-crystal silicon rod electrical performance testing system includes the aforementioned single-crystal silicon rod testing tool.
[0020] Compared with the prior art, the beneficial effects of this utility model are:
[0021] This application provides a single-crystal silicon rod testing tool for testing the minority carrier lifetime and resistivity of single-crystal silicon rods. During actual testing, the single-crystal silicon rod is placed horizontally or vertically, and the main body of the clamp is placed over the outside of the single-crystal silicon rod, with the end of the single-crystal silicon rod placed within the receiving cavity of the clamp main body. After the single-crystal silicon rod is placed in the receiving cavity, the inner wall of the receiving cavity corresponds to and adheres to the outer wall of the single-crystal silicon rod, providing radial restraint and preventing the single-crystal silicon rod from tilting radially. At this point, it is only necessary to move the clamp main body laterally towards the single-crystal silicon rod, aligning the surface of the single-crystal silicon rod to be tested with the detection surface of the detection probe. The detection area of the detection probe then automatically corresponds to the test point on the single-crystal silicon rod, allowing for electrical performance testing of the single-crystal silicon rod. Furthermore, because the single-crystal silicon rod supports the single-crystal silicon rod testing tool, even if the operator slips, there is no risk of the detection probe falling and being damaged, ensuring the safety of the detection probe. This single-crystal silicon rod testing tool not only ensures that the detection surface of the probe is fully aligned with the surface of the single-crystal silicon rod to be tested, but also precisely aligns the detection area of the probe with the test point of the single-crystal silicon rod, thereby improving detection accuracy. Furthermore, it reduces the risk of the probe bumping into the single-crystal silicon rod during testing, as well as the damage caused by the probe being dropped due to operator error, thus extending the service life of the probe. Attached Figure Description
[0022] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0023] Figure 1 This is a schematic diagram of the single-crystal silicon rod testing tool and the single-crystal silicon rod of this utility model (for ease of understanding, the detection probe is not shown, only the detection area of the detection probe is shown);
[0024] Figure 2 This is a schematic diagram of the structure of the present invention, in which a single-crystal silicon rod testing tool is fitted onto the outside of the single-crystal silicon rod for testing;
[0025] Figure 3 This is a schematic diagram of the cylindrical clamping column structure of this utility model;
[0026] Figure 4 This is a schematic diagram of the inner and outer circles formed when the clamping column of this utility model is cylindrical;
[0027] Figure 5 This is a schematic diagram of the plate-shaped clamping column of this utility model;
[0028] Figure 6 This is a schematic diagram of the inner and outer circles formed when the clamping column of this utility model has a plate-like structure.
[0029] In the picture:
[0030] 1-Mounting ring; 101-Inner mounting surface;
[0031] 2-Clamping post; 201-Receiving cavity;
[0032] 3-Detection probe; 301-Detection area;
[0033] 4 - Single crystal silicon rod; 401 - Surface to be tested; 4011 - Test point;
[0034] 5 - Inner circle; 6 - Outer circle. Detailed Implementation
[0035] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0036] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0037] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0038] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0039] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0040] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0041] The following detailed description, in conjunction with the accompanying drawings, outlines some embodiments of the present invention. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0042] Example 1
[0043] Reference Figures 1-6 This embodiment provides a single-crystal silicon rod testing tool for testing the minority carrier lifetime and resistivity of single-crystal silicon rod 4.
[0044] The minority carrier lifetime of monocrystalline silicon refers to the average time taken for minority carriers (electrons or holes) to recombine and disappear in a semiconductor material. It is one of the important parameters for measuring the electrical properties of monocrystalline silicon materials and is of great significance in fields such as photovoltaics and semiconductor device manufacturing.
[0045] Minority carrier lifetime reflects the length of time that minority carriers survive in a semiconductor material, and its value directly affects the performance of the device.
[0046] In the photovoltaic field: a longer minority carrier lifetime means that photogenerated carriers (electron-hole pairs generated by photoexcitation) have more time to participate in the generation of current, thereby improving the photoelectric conversion efficiency of solar cells.
[0047] Minority birth lifetime is typically measured using the following methods:
[0048] Non-contact microwave reflection photoelectric attenuation method: This method uses microwave signals to detect changes in minority carrier concentration over time and calculates the minority carrier lifetime.
[0049] Photoconductive decay method: minority carriers are excited by light, and then the decay process of the photoconductive signal is measured to estimate the minority carrier lifetime.
[0050] In this scheme, the minority carrier lifetime of the silicon rod is measured by non-contact microwave reflection photoelectric attenuation method, and the resistivity of the silicon rod is measured by non-contact eddy current method, specifically by detection probe 3.
[0051] In simple terms, the minority carrier lifetime of a single-crystal silicon rod is an important indicator of its electrical performance, reflecting the time that minority carriers survive in the material. A higher minority carrier lifetime generally means better material quality, especially in photovoltaic and semiconductor device applications, which directly affects device efficiency and performance.
[0052] One end face of the single crystal silicon rod 4 is the test surface 401, and the central area of the test surface 401 is the test point 4011 to be tested.
[0053] The testing tools for single-crystal silicon rods include:
[0054] The clamp body has a receiving cavity 201 for receiving a single crystal silicon rod 4, and the inner wall of the receiving cavity 201 can be correspondingly fitted with the outer wall of the single crystal silicon rod 4 to radially limit the single crystal silicon rod 4.
[0055] A detection probe 3 is disposed on the fixture body. One side of the detection probe 3 is a detection surface, which is a plane. The detection surface has a detection area 301 for detecting the single crystal silicon rod 4. The detection surface is disposed corresponding to the receiving cavity 201, and the detection area 301 is disposed corresponding to the center of the receiving cavity 201. After the single crystal silicon rod 4 is placed in the receiving cavity 201, the detection surface can fit with the surface to be detected 401, and the detection area 301 can correspond to the test point 4011.
[0056] The fixture body includes a mounting ring 1 and multiple clamping posts 2;
[0057] One side of the mounting ring 1 is an inner mounting surface 101. A plurality of clamping posts 2 are respectively connected to the inner mounting surface 101. The plurality of clamping posts 2 are arranged in parallel to each other and are distributed in a circular pattern. The space enclosed by the plurality of clamping posts 2 is the receiving cavity 201.
[0058] Preferably, the mounting ring 1 is a circular ring, and the clamping posts 2 are evenly arranged around the center of the mounting ring 1.
[0059] The inner circumferences of the plurality of clamping posts 2 together form an inner circle 5, and the outer circumferences of the plurality of clamping posts 2 together form an outer circle 6. The diameter of the inner circle 5 is the same as the outer diameter of the single-crystal silicon rod 4, and the diameter of the inner circle 5 is not greater than the inner diameter of the mounting ring 1 (e.g., Figure 4 or Figure 6When the single-crystal silicon rod 4 passes through the receiving cavity 201, its end can extend beyond the inner mounting surface 101 of the mounting ring 1 and fit against the detection surface of the detection probe 3.
[0060] The clamping post 2 can be made of wear-resistant material to reduce wear on the test probe during long-term use.
[0061] The diameter of the inner circle 5 is the same as the inner diameter of the mounting ring 1 and the outer diameter of the single crystal silicon rod 4. Figure 1 As shown.
[0062] Preferably, the clamping post 2 is a cylinder (such as...). Figure 3 ) or plate-like structures (such as Figure 5 ).
[0063] The outer circle 6 has the same outer diameter as the mounting ring 1.
[0064] The other side of the mounting ring 1 is the outer mounting surface, and the detection probe 3 is mounted on the outer mounting surface.
[0065] The detection surface of the detection probe 3 is in contact with the outer mounting surface, and the detection area 301 is located at the center of the mounting ring 1. When the monocrystalline silicon rod 4 passes through the receiving cavity 201, its end extends beyond the inner mounting surface 101 of the mounting ring 1 and is in contact with the detection surface of the detection probe 3. At this time, the detection area 301 of the detection probe 3 corresponds exactly to the test point 4011 of the monocrystalline silicon rod 4 for accurate detection.
[0066] The test probe employs a non-contact microwave reflection photoelectric attenuation method for minority carrier lifetime testing and a non-contact eddy current measurement method for resistivity testing.
[0067] The method for testing the electrical properties of monocrystalline silicon round rods using this monocrystalline silicon rod testing tool includes the following steps:
[0068] 1. Install the detection probe 3 on the outer mounting surface of the fixture body, and make the detection area 301 of the detection probe 3 located at the center of the mounting ring 1 (circular ring);
[0069] 2. Place the detection probe 3 and the fixture body on the outside of the single crystal silicon rod 4, so that the end of the single crystal silicon rod 4 is located in the receiving cavity 201;
[0070] 3. Press the clamp towards the direction of the single crystal silicon rod 4 so that the detection surface of the detection probe 3 is completely in contact with the detection surface 401 of the single crystal silicon rod 4. At this time, the detection area 301 of the detection probe 3 corresponds exactly to the test point 4011 of the single crystal silicon rod 4.
[0071] 4. Perform minority carrier lifetime and resistivity tests on single-crystal silicon rod 4 and record the data.
[0072] Example 2
[0073] A single-crystal silicon rod 4 electrical performance testing system includes the single-crystal silicon rod testing tool and testing equipment used in conjunction with the detection probe 3.
[0074] The beneficial effects of the technical solution of this utility model are:
[0075] This application provides a single-crystal silicon rod testing tool to test the minority carrier lifetime and resistivity of a single-crystal silicon rod 4. During actual testing, the single-crystal silicon rod 4 is placed horizontally or vertically, and the main body of the clamp is placed over the outside of the single-crystal silicon rod 4, i.e., the end of the single-crystal silicon rod 4 is placed inside the receiving cavity 201 of the clamp main body. After the single-crystal silicon rod 4 is placed in the receiving cavity 201, the inner wall of the receiving cavity 201 corresponds to and fits against the outer wall of the single-crystal silicon rod 4, and can radially limit the movement of the single-crystal silicon rod 4, preventing it from tilting radially. At this time, only... The fixture body is moved laterally toward the monocrystalline silicon rod 4, and the surface 401 to be tested of the monocrystalline silicon rod 4 is brought into contact with the detection surface of the detection probe 3. The detection area 301 of the detection probe 3 then automatically aligns with the test point 4011 of the monocrystalline silicon rod 4, allowing for electrical performance testing of the monocrystalline silicon rod 4. Furthermore, because the monocrystalline silicon rod 4 supports the testing tool, even if the operator slips, there is no risk of the detection probe 3 falling and being damaged, ensuring the safety of the detection probe 3. This monocrystalline silicon rod testing tool not only ensures complete contact between the detection surface of the detection probe 3 and the surface 401 to be tested of the monocrystalline silicon rod 4, but also ensures precise alignment between the detection area 301 of the detection probe 3 and the test point 4011 of the monocrystalline silicon rod 4, thereby improving detection accuracy and reducing the risk of the detection probe 3 bumping into the monocrystalline silicon rod 4 during testing, as well as reducing damage from accidental drops, thus extending the service life of the detection probe 3.
[0076] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.
[0077] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.
Claims
1. A single-crystal silicon rod testing tool for testing the minority carrier lifetime and resistivity of a single-crystal silicon rod (4), wherein one end face of the single-crystal silicon rod (4) is the surface to be tested (401), and the central region of the surface to be tested (401) is the test point (4011) to be tested, characterized in that, include: The clamp body has a receiving cavity (201) for receiving a single crystal silicon rod (4), and the inner wall of the receiving cavity (201) can be correspondingly fitted with the outer wall of the single crystal silicon rod (4) to radially limit the single crystal silicon rod (4). A detection probe (3) is disposed on the fixture body. One side of the detection probe (3) is a detection surface. The detection surface is a plane and has a detection area (301) for detecting a single crystal silicon rod (4). The detection surface is disposed corresponding to the receiving cavity (201), and the detection area (301) is disposed corresponding to the center of the receiving cavity (201). After the single crystal silicon rod (4) is placed in the receiving cavity (201), the detection surface can fit with the surface to be detected (401), and the detection area (301) can correspond to the test point (4011).
2. The single-crystal silicon rod testing tool according to claim 1, characterized in that, The fixture body includes a mounting ring (1) and multiple clamping posts (2); One side of the mounting ring (1) is an inner mounting surface (101), and a plurality of clamping posts (2) are respectively connected to the inner mounting surface (101). The plurality of clamping posts (2) are arranged in parallel to each other and are distributed in a circular pattern. The space enclosed by the plurality of clamping posts (2) is the receiving cavity (201).
3. The single-crystal silicon rod testing tool according to claim 2, characterized in that, The mounting ring (1) is a circular ring, and the clamping posts (2) are evenly arranged around the center of the mounting ring (1).
4. The single-crystal silicon rod testing tool according to claim 3, characterized in that, The inner circumferences of the multiple clamping posts (2) together form an inner circle (5), and the outer circumferences of the multiple clamping posts (2) together form an outer circle (6). The diameter of the inner circle (5) is the same as the outer diameter of the single crystal silicon rod (4), and the diameter of the inner circle (5) is not greater than the inner diameter of the mounting ring (1).
5. The single-crystal silicon rod testing tool according to claim 4, characterized in that, The diameter of the inner circle (5) is the same as the inner diameter of the mounting ring (1) and the outer diameter of the single crystal silicon rod (4).
6. The single-crystal silicon rod testing tool according to claim 4, characterized in that, The clamping column (2) adopts a cylindrical or plate-shaped structure.
7. The single-crystal silicon rod testing tool according to claim 4, characterized in that, The outer circle (6) has the same outer diameter as the mounting ring (1).
8. The single-crystal silicon rod testing tool according to claim 3, characterized in that, The other side of the mounting ring (1) is the outer mounting surface, and the detection probe (3) is mounted on the outer mounting surface.
9. The single-crystal silicon rod testing tool according to claim 8, characterized in that, The detection surface of the detection probe (3) is in contact with the outer mounting surface, and the detection area (301) is located at the center of the mounting ring (1).
10. A single-crystal silicon rod (4) electrical performance testing system, characterized in that, The single-crystal silicon rod testing tool includes any one of claims 1-9.