Semiconductor dry etching equipment

Abstract

The utility model relates to the technical field of dry etching, and discloses semiconductor dry etching equipment, which solves the problems in the background technology, and comprises an etching chamber, the etching chamber forms an inner cavity, the side wall of the etching chamber is provided with a probe hole, and the inner wall of the probe hole is provided with a support groove; the light-transmitting sealing element is arranged in the detection hole and located in the supporting groove so as to seal the inner cavity; the end point detector is arranged outside the side wall of the etching chamber and is in butt joint with one end, deviating from the inner cavity, of the detection hole; the antifouling structure is arranged in the supporting groove and can move into the detection hole so as to shield the light-transmitting sealing piece; the gas cleaning system is communicated with the etching chamber and used for blowing clean gas to the detection hole area in the etching process, pollutants are effectively prevented from being deposited on the light-transmitting sealing piece through the gas cleaning system, and it is ensured that the detector can accurately detect the etching end point.

Description

Technical Field

[0001] This utility model belongs to the field of dry etching technology, specifically a semiconductor dry etching device. Background Technology

[0002] Dry etching technology is widely used in semiconductor, MEMS, and precision optics manufacturing, becoming a key process due to its high resolution, good anisotropy, and high selectivity. However, in existing technologies, the endpoint detection window within the etching chamber is easily contaminated by plasma etching residue, leading to signal attenuation and affecting process accuracy. Traditional methods mainly reduce contamination through fixed light-transmitting baffles or mechanical shielding structures, but these methods still struggle to completely remove deposits, and frequent maintenance increases production costs and downtime. Therefore, we propose a semiconductor dry etching apparatus. Utility Model Content

[0003] To address the aforementioned problems, this utility model provides the following technical solution: a semiconductor dry etching apparatus, comprising: an etching chamber forming an inner cavity, a detection hole on the side wall of the etching chamber, and a support groove on the inner wall of the detection hole; a light-transmitting sealing element disposed within the detection hole and located within the support groove to seal the inner cavity; an endpoint detector disposed outside the side wall of the etching chamber and connected to the end of the detection hole opposite to the inner cavity; an anti-fouling structure disposed within the support groove and movable into the detection hole to shield the light-transmitting sealing element; and a gas cleaning system connected to the etching chamber for blowing cleaning gas into the detection hole area during the etching process, the gas cleaning system comprising a gas nozzle and a gas supply source, the gas nozzle being disposed around the detection hole and connected to the gas supply source to spray cleaning gas to prevent contaminants from depositing on the light-transmitting sealing element.

[0004] Furthermore, the cleaning gas is an inert gas.

[0005] Furthermore, the anti-fouling structure includes a rotatable shielding plate, which is installed in the support groove and can rotate between a first position and a second position, wherein: in the first position, the shielding plate is located inside the detection hole to block the light-transmitting seal; in the second position, the shielding plate is away from the detection hole, allowing the endpoint detector to normally detect the etching endpoint.

[0006] Furthermore, the anti-fouling structure also includes a drive component, the output end of which is connected to the shielding plate, and the drive component is a servo motor.

[0007] Furthermore, the shielding sheet is made of sapphire material or corrosion-resistant ceramic material.

[0008] Furthermore, the light-transmitting sealing element has a multi-layer structure and includes: an outer protective layer that is resistant to high temperature and corrosion; a middle light-transmitting layer made of sapphire or quartz glass; and an inner adhesive layer that fits tightly with the support groove to enhance the sealing effect.

[0009] Furthermore, the outer protective layer includes an anti-reflective coating to improve the accuracy of endpoint detection.

[0010] Compared with the prior art, the beneficial effects of this utility model are:

[0011] This invention effectively prevents contaminants from depositing on the light-transmitting seal through a gas cleaning system, ensuring that the detector can accurately detect the etching endpoint. At the same time, the anti-fouling structure uses a rotatable shield to prevent contamination of the light-transmitting seal, improving the durability of the equipment. The shield is made of corrosion-resistant material, enhancing the reliability of the equipment in high-temperature corrosive environments. The light-transmitting seal adopts a multi-layer structure, further improving the sealing effect and detection accuracy. The overall design not only ensures the high efficiency of etching but also extends the service life of the equipment. Attached Figure Description

[0012] The accompanying drawings are provided to further illustrate the present invention and form part of the specification. They are used together with the embodiments of the present invention to explain the present invention, but do not constitute a limitation thereof. In the drawings:

[0013] Figure 1 This is a front view of the overall structure of this utility model;

[0014] Figure 2 This is a schematic diagram of the structure of the light-transmitting sealing component of this utility model;

[0015] In the figure: 1. Etching chamber; 101. Detection hole; 102. Support groove; 2. Light-transmitting seal; 3. End point detector; 4. Anti-fouling structure; 401. Shielding plate; 402. Drive assembly; 5. Gas cleaning system; 501. Gas nozzle; 502. Gas supply source. Detailed Implementation

[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the protection scope of the present utility model.

[0017] Depend on Figure 1-2The present invention comprises: an etching chamber 1, forming an inner cavity, a detection hole 101 on the side wall of the etching chamber 1, and a support groove 102 on the inner wall of the detection hole 101; a light-transmitting sealing element 2, disposed within the detection hole 101 and located within the support groove 102, to seal the inner cavity; an endpoint detector 3, disposed outside the side wall of the etching chamber 1 and connected to the end of the detection hole 101 opposite to the inner cavity; an anti-fouling structure 4, disposed within the support groove 102, movable into the detection hole 101, to block the light-transmitting sealing element 2; and a gas cleaning system 5, connected to the etching chamber 1, for blowing cleaning gas into the area of ​​the detection hole 101 during the etching process. The gas cleaning system 5 includes a gas nozzle 501 and a gas supply source 502. The gas nozzle 501 is disposed around the detection hole 101 and connected to the gas supply source 502 to spray cleaning gas to prevent contaminants from depositing on the light-transmitting sealing element 2.

[0018] Cleaning gases are inert gases.

[0019] The anti-fouling structure 4 includes a rotatable shield 401, which is installed in the support groove 102 and can rotate between a first position and a second position. In the first position, the shield 401 is located in the detection hole 101 to block the light-transmitting seal 2. In the second position, the shield 401 is away from the detection hole 101, so that the endpoint detector 3 can detect the etching endpoint normally.

[0020] The anti-fouling structure 4 also includes a drive component 402, the output of which is connected to the shield 401. The drive component 402 is a servo motor.

[0021] The shielding plate 401 is made of sapphire or corrosion-resistant ceramic material to improve corrosion resistance.

[0022] The light-transmitting seal 2 has a multi-layer structure and includes: an outer protective layer that is resistant to high temperature and corrosion; a middle light-transmitting layer made of sapphire or quartz glass; and an inner adhesive layer that fits tightly with the support groove 102 to enhance the sealing effect.

[0023] The outer protective layer includes an anti-reflective coating to improve the accuracy of endpoint detection.

[0024] Working Principle: During operation, the etching chamber 1 begins etching the material to be processed through plasma or chemical reaction. Simultaneously, the gas cleaning system 5 is activated, injecting clean inert gas through the gas nozzle 501 into the detection aperture 101 area via the gas supply source 502. This cleaning gas effectively removes contaminants from the detection aperture area, preventing their deposition on the light-transmitting seal 2, thus ensuring the normal operation of the detector 3. The shielding plate 401 in the anti-fouling structure 4 rotates to the first position as needed to shield the light-transmitting seal 2, preventing contamination. As the etching process progresses, the anti-fouling structure 4 controls the switching of the shielding plate 401 between the first and second positions via a drive component 402 (such as a servo motor). When etching nears its end, the shielding plate 401 rotates to the second position, exposing the light-transmitting seal 2, allowing the endpoint detector 3 to accurately detect the etching endpoint. This design ensures precise control of the etching process while avoiding the impact of contaminants on equipment performance.

[0025] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0026] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor dry etching apparatus, comprising: An etching chamber (1) is formed to form an inner cavity. A probe hole (101) is provided on the side wall of the etching chamber (1). A support groove (102) is provided on the inner wall of the probe hole (101). A light-transmitting sealing element (2) is disposed in the detection hole (101) and located in the support groove (102) to seal the inner cavity; The endpoint detector (3) is located outside the side wall of the etching chamber (1) and is connected to the end of the probe hole (101) away from the inner cavity. A dirt-proof structure (4) is provided in the support groove (102) and can be moved into the detection hole (101) to block the light-transmitting seal (2); characterized in that: It also includes a gas cleaning system (5) connected to the etching chamber (1) for blowing cleaning gas into the area of ​​the probe hole (101) during the etching process. The gas cleaning system (5) includes a gas nozzle (501) and a gas supply source (502). The gas nozzle (501) is disposed around the probe hole (101) and connected to the gas supply source (502) to spray cleaning gas to prevent contaminants from depositing on the light-transmitting seal (2).

2. The semiconductor dry etching apparatus according to claim 1, wherein The cleaning gas is an inert gas.

3. The semiconductor dry etching apparatus according to claim 1, wherein The anti-fouling structure (4) includes a rotatable shield (401) which is installed in the support groove (102) and can rotate between a first position and a second position, wherein: in the first position, the shield (401) is located in the detection hole (101) to block the light-transmitting seal (2); in the second position, the shield (401) is away from the detection hole (101) so that the endpoint detector (3) can normally detect the etching endpoint.

4. The semiconductor dry etching apparatus according to claim 3, wherein The anti-fouling structure (4) also includes a drive assembly (402), the output end of which is connected to the shield (401), and the drive assembly (402) is a servo motor.

5. A semiconductor dry etching apparatus according to claim 3 or 4, wherein The shielding plate (401) is made of sapphire material or corrosion-resistant ceramic material.

6. A semiconductor dry etching apparatus according to claim 5, wherein The light-transmitting sealing element (2) has a multi-layer structure and includes: an outer protective layer that is resistant to high temperature and corrosion; a middle light-transmitting layer made of sapphire or quartz glass; and an inner adhesive layer that fits tightly with the support groove (102) to enhance the sealing effect.

7. A semiconductor dry etching apparatus according to claim 6, wherein The outer protective layer includes an anti-reflective coating to improve the accuracy of endpoint detection.

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