Anti-splashing evaporation device
By adopting a gradually expanding structure and a tungsten metal evaporation bushing design in the evaporation equipment, the problem of splashing during the evaporation of nickel metal was solved, improving the reliability and evaporation quality of the evaporation equipment and reducing power consumption.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ZHUHAI WEIZHAO SEMICONDUCTOR CO LTD
- Filing Date
- 2025-05-19
- Publication Date
- 2026-04-28
AI Technical Summary
In semiconductor manufacturing processes, when using PVD to deposit metal, the high melting point and poor stability of nickel materials can easily lead to the formation of cavitation bubbles and splashing during the evaporation process, affecting wafer quality and posing potential production risks.
A splash-proof vapor deposition device was designed. By setting a gradually expanding vapor deposition bushing and a recess on the vapor deposition body, thermal stress is dispersed and local temperature unevenness is reduced. The vapor deposition bushing is constructed with tungsten metal to improve stability, and the recess reduces heat loss, forming a vapor deposition material carrying cavity with an open top.
It effectively prevents metal splashing, improves the reliability and overall performance of the vapor deposition equipment, reduces power consumption, and ensures wafer quality and production safety.
Smart Images
Figure CN224172837U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor vapor deposition equipment technology, and more specifically to a splash-proof vapor deposition apparatus. Background Technology
[0002] In semiconductor manufacturing processes, especially when using PVD (Physical Vapor Deposition) to deposit metals onto wafers, electron beam evaporation is generally employed. Therefore, the evaporation equipment is one of the most important pieces of equipment in the evaporation process. Taking the evaporation of nickel materials as an example, the evaporation in related technologies involves directly placing the metal material into the evaporation equipment for evaporation. However, because nickel has a high melting point and poor stability, this evaporation method easily leads to the formation of cavitation bubbles and splashing of molten nickel upon cooling, resulting in wafer damage, seriously affecting product quality, and posing significant production risks. This situation needs to be changed. Utility Model Content
[0003] In view of this, this application provides an anti-splash vapor deposition apparatus to solve the aforementioned technical problems.
[0004] To achieve the above objectives, the technical solution adopted is as follows:
[0005] An anti-splash vapor deposition apparatus includes: a vapor deposition body, a vapor deposition bushing, and a first recess. The upper surface of the vapor deposition body is provided with at least one vapor deposition receiving groove. The vapor deposition bushing is disposed in the vapor deposition receiving groove and includes a bottom wall connector and a side wall connector. The side wall connector is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition receiving groove to form a vapor deposition material carrying cavity with an open top. The first recess is disposed between the vapor deposition bushing and the vapor deposition receiving groove and is connected to the end of the bottom wall connector away from the side wall connector. The first recess is concentrically arranged with the vapor deposition receiving groove, the bottom wall connector, and the side wall connector to reduce the contact area between the bottom wall connector and the vapor deposition receiving groove.
[0006] This application further specifies that: the bottom wall connector includes at least a tungsten metal bottom wall, and the side wall connector includes at least a tungsten metal side wall.
[0007] This application further specifies that: the vapor-deposited bushing includes a thickened connector, which is evenly distributed on the inner walls of the bottom wall connector and the side wall connector.
[0008] This application further specifies that the end of the sidewall connector that is away from the bottom wall connector is flush with the upper surface of the vapor deposition body.
[0009] This application further specifies that: the inner wall connection between the bottom wall connector and the side wall connector, as well as the outer wall connection between the bottom wall connector and the side wall connector, are all provided with chamfers.
[0010] This application is further configured such that: a first tilt angle is provided between the bottom wall connector and the side wall connector, and the angle range of the first tilt angle includes 100° to 145°.
[0011] This application further specifies that: a second inclination angle is provided between the bottom of the vapor deposition tank and the tank wall, and the second inclination angle has the same value as the first inclination angle.
[0012] This application further specifies that an isolation space is provided between the outer wall of the sidewall connector and the inner wall of the vapor deposition accommodating tank.
[0013] This application is further configured to include at least one second recess, which is concentrically connected to the first recess and the coverage area of the second recess is smaller than the coverage area of the first recess, so as to form a temperature gradient on the bottom wall connector.
[0014] This application further specifies that the bottom wall connector and the side wall connector are integrally formed.
[0015] In summary, compared with the prior art, this application discloses an anti-splashing vapor deposition apparatus. The vapor deposition receiving tank on the upper surface of the vapor deposition body accommodates the vapor deposition bushing. The side wall connector of the vapor deposition bushing is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition receiving tank. A first recess is disposed between the vapor deposition bushing and the vapor deposition receiving tank and is connected to the end of the bottom wall connector away from the side wall connector. That is, through the above configuration, the vapor deposition bushing forms a vapor deposition material carrying cavity with an open top. The gradually expanding structure design disperses thermal stress and reduces material splashing caused by local temperature unevenness. The first recess reduces the contact area between the bottom wall connector and the vapor deposition receiving tank, slows down the heat loss of vapor deposition, and improves the reliability and overall performance of the vapor deposition apparatus. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 This is a three-dimensional structural schematic diagram of the anti-splash vapor deposition apparatus of this embodiment;
[0018] Figure 2This is a cross-sectional structural diagram of the anti-splash vapor deposition apparatus of this embodiment;
[0019] Figure 3 This is a three-dimensional structural schematic diagram of the vapor-deposited bushing in this embodiment;
[0020] Figure 4 This is a cross-sectional structural diagram of the first type of vapor-deposited bushing in this embodiment;
[0021] Figure 5 This is a cross-sectional structural diagram of the second type of vapor-deposited bushing in this embodiment. Detailed Implementation
[0022] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.
[0023] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, components, features, and elements with the same names in different embodiments of this application may have the same meaning or different meanings, the specific meaning of which must be determined by its interpretation in that specific embodiment or further in conjunction with the context of that specific embodiment.
[0024] It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit this application.
[0025] In the following description, the use of suffixes such as "module," "part," or "unit" to denote elements is solely for the purpose of illustrative purposes and has no specific meaning in itself. Therefore, "module," "part," or "unit" may be used interchangeably.
[0026] In the description of this application, it should be noted that the terms "upper," "lower," "left," "right," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0027] The technical solutions shown in this application will be described in detail below through specific embodiments. It should be noted that the order of description of the following embodiments is not intended to limit the priority of the embodiments.
[0028] Please refer to Figures 1 to 4 The anti-splash vapor deposition apparatus of this application embodiment includes a vapor deposition body 1, a vapor deposition bushing 2, and a first recessed platform 3.
[0029] In the specific implementation process, the upper surface of the vapor deposition body 1 is provided with at least one vapor deposition receiving tank 11, the vapor deposition bushing 2 is disposed in the vapor deposition receiving tank 11, and the vapor deposition bushing 2 includes a bottom wall connector 21 and a side wall connector 22. The side wall connector 22 is connected to the bottom wall connector 21 and gradually expands relative to the bottom wall connector 21 along the direction from the bottom to the opening of the vapor deposition receiving tank 11 to construct a vapor deposition material carrying cavity with an open top. Based on this gradually expanding structure design, the thermal stress of the vapor deposition bushing 2 and the vapor deposition material during the vapor deposition process is dispersed. The vapor deposition material carrying cavity constructed by the bottom wall connector 21 and the side wall connector 22 also has a heat preservation effect in the vapor deposition receiving tank 11, which can prevent the vapor deposition material from flowing out and splashing when it encounters cold, thereby improving the reliability of the vapor deposition device.
[0030] Furthermore, the first recessed platform 3 is disposed between the vapor deposition bushing 2 and the vapor deposition receiving tank 11, and is connected to the end of the bottom wall connector 21 away from the side wall connector 22. The first recessed platform 3 is concentrically arranged with the vapor deposition receiving tank 11, the bottom wall connector 21 and the side wall connector 22. That is, the first recessed platform 3 partially isolates the contact between the vapor deposition bushing 2 and the vapor deposition receiving tank 11 between the vapor deposition bushing 2 and the vapor deposition receiving tank 11, specifically the contact between the bottom wall connector 21 and the vapor deposition receiving tank 11, thereby reducing the contact area between the bottom wall connector 21 and the vapor deposition receiving tank 11. As a result, the heat conduction rate between the vapor deposition bushing 2 and the vapor deposition body 1 can be reduced, making it easier for the vapor deposition material to reach the evaporation temperature, reducing the evaporation power of the vapor deposition device, saving power consumption, and thus improving the overall performance of the vapor deposition device.
[0031] In one embodiment, the vapor deposition material includes metallic nickel, which is liquid within the vapor deposition bushing 2 to facilitate vapor deposition.
[0032] In one embodiment, the vapor deposition body 1 includes a crucible.
[0033] In the specific implementation process, chamfers are provided at the inner wall connection of the bottom wall connector 21 and the outer wall connection of the bottom wall connector 21 and the side wall connector 22. Combined with the aforementioned gradual expansion structure design, the vapor deposition bushing 2 disperses the thermal expansion of the metal material during evaporation along the side wall, avoiding stress concentration at its bottom corner. That is, the metal material naturally spreads along the side wall connector 22, which can reduce splashing caused by local overheating and improve the reliability of vapor deposition.
[0034] Preferably, the first recess 3 is disposed between the vapor deposition bushing 2 and the vapor deposition receiving tank 11, and is connected to the end of the bottom wall connector 21 away from the side wall connector 22. The first recess 3 reduces the contact area between the bottom wall connector 21 and the vapor deposition receiving tank 11 by 50% to 70%, so as to partially cut off the heat conduction path between the vapor deposition bushing 2 and the vapor deposition receiving tank 11, thereby reducing the heat loss carried away by the cooling of the vapor deposition body 1.
[0035] Furthermore, the first recessed platform 3 is concentrically arranged with the vapor deposition receiving tank 11, the bottom wall connector 21 and the side wall connector 22 to avoid local stress concentration caused by eccentricity and improve the thermal uniformity of the vapor deposition bushing 2.
[0036] Preferably, the bottom wall connector 21 includes at least a tungsten metal bottom wall, and the side wall connector 22 includes at least a tungsten metal side wall. In this case, the vapor deposition bushing 2 can be made entirely of tungsten metal. Given the high melting point of tungsten metal, it is suitable for vapor deposition of a wide range of metal materials, especially nickel metal. On the other hand, the tungsten metal vapor deposition bushing 2 has a stable coefficient of thermal expansion, which can avoid the risk of cracking during cooling, such as when using molybdenum metal, and improve the reliability of vapor deposition.
[0037] In the specific implementation process, the vapor deposition bushing 2 also includes a thickened connector 23. The thickened connector 23 is evenly distributed on the inner wall of the bottom wall connector 21 and the side wall connector 22, thereby increasing the overall wall thickness of the vapor deposition bushing 2, thus ensuring the structural stability of the vapor deposition bushing 2 during the vapor deposition process and ensuring the stability of the vapor deposition bushing 2 under the action of thermal expansion.
[0038] It is understandable that the bottom wall connector 21 and the side wall connector 22 are integrally formed.
[0039] Furthermore, the end of the sidewall connector 22 that is away from the bottom wall connector 21 is flush with the upper surface of the vapor deposition body 1. Thus, the flush sidewall and the upper surface of the vapor deposition body 1 form a continuous plane, which prevents the metal material from overflowing along the sidewall of the vapor deposition bushing 2 to the surface of the body and reduces splashing caused by edge overheating. At the same time, the height of the flush sidewall is also matched with the wafer surface, which can guide the metal material to evaporate uniformly along the axial direction and reduce uneven film thickness caused by lateral diffusion.
[0040] In one embodiment, a first tilt angle is provided between the bottom wall connector 21 and the side wall connector 22, as shown in the attached figure. Figure 2 and 4 As shown, the first tilt angle is set to Q1, and the angle range of the first tilt angle includes 100° to 145°, so as to adjust the gradual expansion angle of the vapor deposition bushing 2 in the vapor deposition receiving tank 11.
[0041] Preferably, the first tilt angle includes 125°.
[0042] Furthermore, a second inclination angle is provided between the bottom and the wall of the vapor deposition container 11. The second inclination angle is set as Q2. The value of the second inclination angle is the same as that of the first inclination angle, so that the inner wall contour of the vapor deposition container 11 matches the outer wall of the vapor deposition bushing 2, reducing the abrupt change in the interface heat conduction path and improving the heat preservation effect of the vapor deposition bushing 2.
[0043] Among them, an isolation space is provided between the outer wall of the side wall connector 22 and the inner wall of the vapor deposition container 11 to reduce the heat conduction efficiency of the vapor deposition container 11 and the vapor deposition bushing 2, thereby improving the heat preservation effect.
[0044] In one embodiment, continue to refer to Figure 5 The anti-splash vapor deposition apparatus also includes at least one second recess 4, which is concentrically connected to the first recess 3 and has a smaller coverage area than the first recess 3, so as to form a temperature gradient on the bottom wall connector 21. That is, the first recess 3 and the second recess 4 form a concentric annular gap between the vapor deposition receiving tank 11 and the vapor deposition bushing 2, so the first recess 3 and the second recess 4 present a stepped temperature distribution on the bottom wall connector 21, thereby reducing the heat conduction efficiency of the vapor deposition receiving tank 11 and the vapor deposition bushing 2 and improving the heat preservation effect.
[0045] Optionally, the first recess 3 and the second recess 4 may also be filled with a ceramic isolation layer in the concentric annular gap formed between the vapor deposition receiving tank 11 and the vapor deposition bushing 2.
[0046] The present application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only for the purpose of helping to understand the core ideas of the present application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present application. Therefore, the content of this specification should not be construed as a limitation of the present application.
Claims
1. A splash-proof vapor deposition apparatus, characterized in that, include: The vapor deposition body comprises a vapor deposition bushing, a vapor deposition liner, and a first recess. The upper surface of the vapor deposition body is provided with at least one vapor deposition receiving groove. The vapor deposition bushing is disposed within the vapor deposition receiving groove and includes a bottom wall connector and a side wall connector. The side wall connector is connected to the bottom wall connector and gradually expands relative to the bottom wall connector along the direction from the bottom to the opening of the vapor deposition receiving groove to form a vapor deposition material carrying cavity with an open top. The first recess is disposed between the vapor deposition bushing and the vapor deposition receiving groove and is connected to the end of the bottom wall connector away from the side wall connector. The first recess is concentrically arranged with the vapor deposition receiving groove, the bottom wall connector, and the side wall connector to reduce the contact area between the bottom wall connector and the vapor deposition receiving groove.
2. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, The bottom wall connector includes at least a tungsten metal bottom wall, and the side wall connector includes at least a tungsten metal side wall.
3. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, The vapor-deposited bushing includes a thickened connector, which is evenly distributed on the inner walls of the bottom wall connector and the side wall connector.
4. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, The end of the sidewall connector that faces away from the bottom wall connector is flush with the upper surface of the vapor deposition body.
5. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, The inner wall connection between the bottom wall connector and the side wall connector, as well as the outer wall connection between the bottom wall connector and the side wall connector, are all provided with chamfers.
6. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, A first tilt angle is provided between the bottom wall connector and the side wall connector, and the angle range of the first tilt angle includes 100° to 145°.
7. The anti-splash vapor deposition apparatus as described in claim 6, characterized in that, The vapor deposition tank has a second inclination angle between its bottom and its wall, and the second inclination angle has the same value as the first inclination angle.
8. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, An isolation space is provided between the outer wall of the sidewall connector and the inner wall of the vapor deposition accommodating tank.
9. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, It also includes at least one second recess, which is concentrically connected to the first recess and has a smaller coverage area than the first recess, so as to form a temperature gradient on the bottom wall connector.
10. The anti-splashing vapor deposition apparatus as described in claim 1, characterized in that, The bottom wall connector and the side wall connector are integrally formed.