Guide plate for crystal growth device and crystal growth device

Abstract

The utility model discloses a guide plate for a crystal growth device and the crystal growth device, and relates to the technical field of crystal growth, the guide plate for the crystal growth device comprises a gas flow channel formed on the guide plate, and the guide plate is provided with a first end face and a second end face, the first flow channel extends in the thickness direction of the flow guide plate, the two ends of the first flow channel extend to the first end face and the second end face correspondingly, one end of the second flow channel is provided with a first arc-shaped section, the first arc-shaped section extends to the side wall of the first flow channel so that the first flow channel can communicate with the second flow channel, and the other end of the second flow channel extends to the first end face. And the first arc-shaped section is configured to limit the gas in the first flow channel to flow towards one side of the second end face under the condition that the gas flows into the gas flow channel from one side of the first end face. According to the guide plate, the effect of blocking upward transmission of gas can be achieved, the risk of mixed crystal introduction caused by pressure and temperature fluctuation after crystal growth is finished and continuous growth of crystals is reduced, and the quality of the crystals produced by a crystal growth device can be improved.

Description

Technical Field

[0001] This utility model relates to the field of crystal growth technology, and in particular to a flow guide plate for a crystal growth device and a crystal growth device having the flow guide plate. Background Technology

[0002] In related technologies, the temperature drop in existing crystal growth devices after crystal growth is delayed. Gas inside the crystal growth device will still be transported upwards, and the crystal will continue to grow. However, pressure and temperature changes will cause polymorphic crystals to be generated on the crystal, affecting the quality of the crystals produced by the crystal growth device. Utility Model Content

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. Therefore, one objective of this invention is to provide a flow guide plate for a crystal growth apparatus that can block the upward transmission of gas, reduce the gas transmission efficiency to the crystal interface after crystal growth, and decrease the risk of impurity crystal introduction due to pressure and temperature fluctuations after crystal growth and the continued growth of the crystal. This is beneficial to improving the quality of crystals produced by the crystal growth apparatus.

[0004] This invention also proposes a crystal growth device using the aforementioned guide plate.

[0005] A flow guide plate for a crystal growth device according to a first aspect embodiment of the present invention includes: the flow guide plate having a gas flow channel, the gas flow channel including a first flow channel and a second flow channel; the flow guide plate having a first end face and a second end face along the thickness direction of the flow guide plate; the first flow channel extending along the thickness direction of the flow guide plate and extending to the first end face and the second end face respectively at both ends; the second flow channel located on one side of the first flow channel; one end of the second flow channel having a first arcuate segment; the first arcuate segment extending to the sidewall of the first flow channel to connect the first flow channel and the second flow channel; the other end of the second flow channel extending to the first end face; the first arcuate segment being configured to restrict the flow of gas in the first flow channel to the second end face when gas flows into the gas flow channel from the first end face side.

[0006] According to the embodiment of this application, the guide plate for the crystal growth apparatus can guide the gas in the crystal growth apparatus to flow from the second end face to the first end face during the crystal growth process. That is, the guide plate can guide the gas in the crystal growth apparatus towards the seed crystal, and the guide plate can play a guiding role. After crystal growth is completed, the guide plate rotates so that the second end face is above the first end face, and the gas can flow from the first end face of the guide plate into the gas flow channel. The guide plate can restrict the gas in the first flow channel from flowing to the second end face, which can achieve the effect of blocking the gas from flowing towards the seed crystal. This can reduce the gas transmission efficiency to the crystal interface after crystal growth, thereby blocking the continued crystal growth. This reduces the risk of impurity crystal introduction due to pressure and temperature fluctuations after crystal growth and the continued crystal growth, which is beneficial to improving the quality of crystals produced by the crystal growth apparatus.

[0007] According to some embodiments of the present invention, the first flow channel includes a first sub-flow channel segment and a second sub-flow channel segment connected together. The second sub-flow channel segment is located between the first sub-flow channel segment and the first end face. The first arc-shaped segment is connected to at least one of the first sub-flow channel segment and the second sub-flow channel segment. The cross-sectional area of ​​the first sub-flow channel segment is greater than the cross-sectional area of ​​the second sub-flow channel segment, and the cross-sectional area of ​​the first sub-flow channel segment is greater than the cross-sectional area of ​​the second flow channel.

[0008] According to some embodiments of the present invention, the cross-sectional area of ​​the second sub-channel section is smaller than the cross-sectional area of ​​the second channel.

[0009] According to some embodiments of the present invention, the first arc-shaped segment protrudes to the side opposite to the first end face.

[0010] According to some embodiments of the present invention, the first arc segment is constructed as a circular arc.

[0011] According to some embodiments of the present invention, the first arc segment has a first arc sidewall and a second arc sidewall. The first arc sidewall is located between the second arc sidewall and the first end face. The angle between the tangent of the second arc sidewall adjacent to the first flow channel and the thickness direction of the guide plate is β, satisfying the relationship: 75°≤β≤90°.

[0012] According to some embodiments of the present invention, the second flow channel has a second arc-shaped segment adjacent to the other end, the second arc-shaped segment protruding to the side away from the first flow channel.

[0013] According to some embodiments of the present invention, the second arc-shaped segment has a first flow channel sidewall and a second flow channel sidewall. The second flow channel sidewall is located on the side of the first flow channel sidewall that is away from the first flow channel. The first flow channel sidewall is arc-shaped. The angle between the tangent of the first flow channel sidewall and the other end adjacent to it and the thickness direction of the guide plate is α, which satisfies the relationship: 0°≤α≤15°.

[0014] According to some embodiments of the present invention, the cross-sectional area of ​​the second flow channel remains unchanged along the extending direction of the second flow channel.

[0015] The crystal growth apparatus according to a second aspect of the present invention includes the flow guide plate for the crystal growth apparatus described in the above embodiments.

[0016] According to some embodiments of the present invention, the crystal growth device further includes: a driving device, which is connected to the guide plate and is used to drive the guide plate to rotate.

[0017] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0018] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0019] Figure 1 This is a cross-sectional view of the crystal growth apparatus according to an embodiment of this application;

[0020] Figure 2 This is a cross-sectional view of the guide plate of the crystal growth device according to an embodiment of this application after it has been flipped.

[0021] Figure 3 This is a side sectional view of the deflector according to an embodiment of this application;

[0022] Figure 4 for Figure 3 A magnified view of a portion of point A in the middle;

[0023] Figure 5 This is a top view of the guide vane according to an embodiment of this application.

[0024] Figure label:

[0025] Crystal growth device 1,

[0026] 10, guide vane; 11, first end face; 12, second end face; 13, guide column.

[0027] Gas flow channel 20, first flow channel 21, first sub-flow channel segment 211, second sub-flow channel segment 212, second flow channel 22, first arc-shaped segment 221, first arc-shaped sidewall 2211, second arc-shaped sidewall 2212, second arc-shaped segment 222, first flow channel sidewall 2221, second flow channel sidewall 2222.

[0028] Drive unit 30,

[0029] Cap 40, Seed crystal 41

[0030] Device body 50,

[0031] Gas transfer zone 60,

[0032] Powder 70. Detailed Implementation

[0033] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0034] The following is for reference. Figures 1-5 Describes a flow guide plate 10 for a crystal growth apparatus 1 according to an embodiment of the present invention.

[0035] According to the first aspect of the present invention, a flow guide plate 10 for a crystal growth device 1, such as Figures 1-5 As shown, the guide plate 10 for the crystal growth device 1 may include: the guide plate 10 having a gas flow channel 20, the gas flow channel 20 including a first flow channel 21 and a second flow channel 22, the guide plate 10 having a first end face 11 and a second end face 12 along the thickness direction of the guide plate 10, the first flow channel 21 extending along the thickness direction of the guide plate 10 and extending to the first end face 11 and the second end face 12 respectively at both ends, the second flow channel 22 being located on one side of the first flow channel 21, one end of the second flow channel 22 having a first arc segment 221, the first arc segment 221 extending to the sidewall of the first flow channel 21 to connect the first flow channel 21 and the second flow channel 22, the other end of the second flow channel 22 extending to the first end face 11, the first arc segment 221 being configured to restrict the flow of gas in the first flow channel 21 to the second end face 12 when gas flows into the gas flow channel 20 from the first end face 11 side.

[0036] It should be noted that in the relevant technologies, the temperature drop of the existing crystal growth device after crystal growth is completed has a lag. The gas in the crystal growth device will still be transported upward and the crystal will continue to grow. However, the pressure and temperature changes will cause polymorphic crystals to be generated on the crystal, which will affect the quality of the crystals produced by the crystal growth device.

[0037] Based on this, this application proposes a flow guide plate 10 for a crystal growth device 1. The crystal growth device 1 can produce crystals using methods such as physical vapor transport. The crystal growth device 1 can be used to produce silicon carbide single crystals, aluminum nitride single crystals, etc. This application embodiment uses the production of silicon carbide single crystals by the physical vapor transport method in the crystal growth device 1 as an example for illustration. The crystal growth device 1 may include a heating system, a cover 40, and a device body 50. The cover 40 can be assembled with the device body 50, and the cover 40 and the device body 50 can define a gas transport zone 60. As an example, the cross-sections of both the cover 40 and the device body 50 can be constructed as circles. The cover 40 can form internal threads, and the device body 50 can form external threads. The cover 40 can be assembled with the device body 50 to define the gas transport zone 60. Both the cover 40 and the device body 50 can be made of graphite.

[0038] The heating system can be used to heat the crystal growth apparatus 1, thereby raising its temperature. The crystal growth apparatus 1 may also include a seed crystal 41, which can be located within the gas transport zone 60. The seed crystal 41 can be bonded to the cover 40, and can be located at the center of the cover 40. When the crystal growth apparatus 1 is used to produce silicon carbide crystals, high-purity silicon carbide powder 70 can be placed at the bottom of the apparatus body 50, and the seed crystal 41 can be bonded to the center of the cover 40. The heating system raises the temperature inside the crystal growth apparatus 1 to over 2000°C, creating an axial temperature gradient. The silicon carbide powder 70 sublimates to form silicon carbide gas, which, driven by the temperature gradient, is transported to the lower-temperature seed crystal 41, where it crystallizes and grows into a silicon carbide crystal.

[0039] like Figure 1 As shown, the cover 40 and the main body 50 define a gas transmission zone 60. A guide plate 10 can be located within the gas transmission zone 60, serving as a guide to direct gas flow. The guide plate 10 guides the gas within the crystal growth device 1 towards the seed crystal 41. The guide plate 10 can be mounted on the main body 50 and positioned at the top of the main body 50 along the height direction of the crystal growth device 1. In other words, the guide plate 10 can be located above the midline of the crystal growth device 1 along its height direction; conversely, the guide plate 10 can be located above the powder 70. When the crystal growth device 1... Figure 1 When setting the orientation, the height direction of the crystal growth device 1 can be... Figure 1The Z-direction is shown in the diagram. The guide plate 10 serves as a flow guide, and it can form gas channels 20. Gas within the crystal growth device 1 can flow through these gas channels 20 to the seed crystal 41. Multiple gas channels 20 can enhance the flow guiding effect of the guide plate 10, increasing the gas flow rate through the guide plate 10 to the seed crystal 41. The guide plate 10 can be constructed as a plate-like structure with a circular cross-section. Along the circumference of the guide plate 10, its outer peripheral wall can abut against the inner wall of the device body 50, further allowing gas to flow through the multiple gas channels 20 to the seed crystal 41.

[0040] like Figure 1 and Figure 3 As shown, along the thickness direction of the guide plate 10, the guide plate 10 may have a first end face 11 and a second end face 12. The first end face 11 and the second end face 12 may be arranged opposite to each other and spaced apart along the thickness direction of the guide plate 10. Both the first end face 11 and the second end face 12 may be connected to the outer peripheral wall of the guide plate 10. When the guide plate 10 is installed on the main body 50 of the device and plays a guiding role, the thickness direction of the guide plate 10 may be parallel to the height direction of the crystal growth device 1, and the first end face 11 may be located above the second end face 12. The gas flow channel 20 may include a first flow channel 21 and a second flow channel 22. The first flow channel 21 may extend along the thickness direction of the guide plate 10. The two ends of the first flow channel 21 may extend to the first end face 11 and the second end face 12, respectively. That is, the first flow channel 21 may penetrate the guide plate 10 along the thickness direction of the guide plate 10. One end of the first flow channel 21 may extend to the second end face 12, and the other end of the first flow channel 21 may extend to the first end face 11.

[0041] like Figure 3 and Figure 4 As shown, along the radial direction of the first flow channel 21, the second flow channel 22 can be located on one side of the first flow channel 21. One end of the second flow channel 22 can have a first arcuate segment 221, which can be located at the end where the second flow channel 22 connects to the first flow channel 21. The first arcuate segment 221 can extend to the sidewall of the first flow channel 21, and can connect the first flow channel 21 and the second flow channel 22. The other end of the second flow channel 22 can extend to the first end face 11. Figure 1As shown, during the crystal growth process, the guide plate 10 can be used to guide the gas in the crystal growth device 1 toward the seed crystal 41. The gas can flow from the second end face 12 side of the guide plate 10 to the first end face 11 side. The gas can flow into the first flow channel 21 from one end of the first flow channel 21 and flow out from the other end of the first flow channel 21 and the second flow channel 22 respectively. The gas can flow to the seed crystal 41 through the first flow channel 21 and the second flow channel 22. There are multiple gas flow channels 20, which can increase the gas flow rate that flows to the seed crystal 41 through the guide plate 10 at the same time, and can improve the crystal growth efficiency.

[0042] like Figure 2 and Figure 4 As shown, after crystal growth is completed, the temperature drop within the crystal growth device 1 has a lag. Pressure and temperature fluctuations occur within the crystal growth device 1, and the gas within it continues to rise. The guide plate 10 rotates so that the second end face 12 is above the first end face 11. Gas can flow into the gas channel 20 from one side of the first end face 11 of the guide plate 10. That is, the gas within the crystal growth device 1 can flow into the corresponding gas channel 20 through the other end of the first channel 21 and the other end of the second channel 22. When the gas in the second channel 22 flows to the first arc-shaped section 221, the gas in the first arc-shaped section 221 can interact with the arc of the first arc-shaped section 221. The collision of the walls generates vortices, and the gas in the first arc segment 221 forms a downward or other direction airflow. The gas in the first arc segment 221 can collide with the gas in the first flow channel 21 at the intersection of the first flow channel 21 and the second flow channel 22 and generate vortices and backflow, thereby restricting the flow of gas in the first flow channel 21 to the second end face 12. This can block the transmission of gas toward the seed crystal 41, thereby blocking the continued growth of the crystal. It can reduce the risk of impurity crystal introduction due to pressure and temperature fluctuations after crystal growth and the continued growth of the crystal, which is beneficial to improving the quality of the crystals produced by the crystal growth device 1.

[0043] In this embodiment, the guide plate 10 can guide the gas in the crystal growth device 1 to flow from the second end face 12 side to the first end face 11 side during the crystal growth process. That is, the guide plate 10 can guide the gas in the crystal growth device 1 to be transported toward the seed crystal 41, and the guide plate 10 can play a guiding role. After the crystal growth is completed, the guide plate 10 rotates so that the second end face 12 is above the first end face 11. The gas can flow into the gas channel 20 from the first end face 11 side of the guide plate 10. The guide plate 10 can restrict the gas in the first channel 21 to flow toward the second end face 12 side, which can achieve the effect of blocking the gas from being transported toward the seed crystal 41. This can reduce the gas transport efficiency to the crystal interface after the crystal growth is completed, thereby blocking the continued crystal growth. This reduces the risk of impurity crystal introduction due to pressure and temperature fluctuations after the crystal growth is completed and the crystal continues to grow, which is beneficial to improving the quality of the crystal produced by the crystal growth device 1.

[0044] As an example, such as Figure 5 As shown, the first flow channel 21 and the corresponding second flow channel 22 can be arranged radially along the guide plate 10. Along the radial direction of the guide plate 10, the second flow channel 22 can be located on the side of the first flow channel 21 opposite to the central axis extending along the thickness direction of the guide plate 10. The multiple gas flow channels 20 of the guide plate 10 can be centrally symmetrically distributed about the central axis of the guide plate 10, which facilitates uniform gas transmission, thereby promoting uniform crystal growth and further improving the quality of the crystals produced by the crystal growth apparatus 1.

[0045] As an example, the deflector 10 can be made of graphite, which has strong corrosion resistance, and the density of artificial graphite can be as low as 1.5 g / cm³. 3 -2.3g / cm 3 The density of the deflector 10 can be ρ, satisfying the relationship: 1.9 ≤ ρ ≤ 2.3. The unit of the density of the deflector 10 can be "g / cm³". 3 For example, the density of the deflector 10 can be 1.9 g / cm³. 3 2.1g / cm 3 2.2g / cm 3 2.3g / cm 3 The density of the deflector plate 10 is 1.9 g / cm³. 3 Up to 2.3 g / cm 3 Any value within the specified range, including the endpoint value, is acceptable for the density of the guide plate 10 in this invention. If the density of the guide plate 10 is less than 1.9 g / cm³... 3 This will affect the corrosion resistance of the guide plate 10. When the guide plate 10 is used in the crystal growth device 1, the silicon carbide gas will carry away some of the carbon particles on the guide plate 10, affecting the quality of silicon carbide crystallization. If the density of the guide plate 10 is greater than 2.3 g / cm³, it will affect the corrosion resistance of the guide plate 10.3 The deflector plate 10 is made of high-purity graphite. The preparation process of high-purity graphite is complex and costly. Furthermore, high-purity graphite has relatively low mechanical strength and is easily damaged under heavy loads or strong impacts, affecting the reliability of the deflector plate 10. Therefore, the density of the deflector plate 10 is 1.9 g / cm³. 3 Up to 2.3 g / cm 3 This arrangement allows the deflector plate 10 to have strong corrosion resistance and high reliability.

[0046] In some embodiments of this utility model, such as Figure 1 , Figure 3 and Figure 4 As shown, the first flow channel 21 may include a first sub-flow channel segment 211 and a second sub-flow channel segment 212 connected together. The second sub-flow channel segment 212 is located between the first sub-flow channel segment 211 and the first end face 11. The first arc-shaped segment 221 is connected to at least one of the first sub-flow channel segment 211 and the second sub-flow channel segment 212. The cross-sectional area of ​​the first sub-flow channel segment 211 is larger than the cross-sectional area of ​​the second sub-flow channel segment 212, and the cross-sectional area of ​​the first sub-flow channel segment 211 is larger than the cross-sectional area of ​​the second flow channel 212.

[0047] The first sub-flow channel segment 211 and the second sub-flow channel segment 212 can be arranged sequentially along the thickness direction of the guide plate 10. The first sub-flow channel segment 211 and the second sub-flow channel segment 212 are connected to each other. The second sub-flow channel segment 212 is located between the first sub-flow channel segment 211 and the first end face 11. The first arc-shaped segment 221 is connected to at least one of the first sub-flow channel segment 211 and the second sub-flow channel segment 212. The first arc-shaped segment 221 can be connected to the first sub-flow channel segment 211, or the first arc-shaped segment 221 can be connected to the second sub-flow channel segment 212, or the first arc-shaped segment 221 can be connected to both the first sub-flow channel segment 211 and the second sub-flow channel segment 212. In this embodiment, the connection between the first arc-shaped segment 221 and the second sub-flow channel segment 212 is used as an example for illustration.

[0048] When gas flows from the second end face 12 of the guide plate 10 to the first end face 11, the gas can first flow into the first sub-flow channel section 211 and then into the second flow channel 22 and the second sub-flow channel section 212. The cross-sectional area of ​​the first sub-flow channel section 211 is larger than that of the second sub-flow channel section 212. When gas flows from the first sub-flow channel section 211 into the second sub-flow channel section 212, the gas velocity increases, and the gas velocity in the second sub-flow channel section 212 is greater than that in the first sub-flow channel section 211. The cross-sectional area of ​​the first sub-flow channel section 211 is larger than that of the second flow channel 22. When gas flows from the first sub-flow channel section 211 into the second flow channel 22, the gas velocity increases, and the gas velocity in the second flow channel 22 is greater than that in the first sub-flow channel section 211.

[0049] like Figure 1 As shown, during the crystal growth process, when gas flows from the second end face 12 side of the guide plate 10 to the first end face 11 side, that is, when the guide plate 10 is used to guide the gas in the crystal growth device 1 toward the seed crystal 41, the gas can flow into the second flow channel 22 and the second sub-flow channel 212 respectively through the first sub-flow channel section 211. The gas velocity in the second flow channel 22 is greater than the gas velocity in the first sub-flow channel section 211, and the gas velocity in the second sub-flow channel section 212 is greater than the gas velocity in the first sub-flow channel section 211. According to Bernoulli's principle, the faster the flow velocity, the lower the pressure. The pressure on the first end face 11 side of the guide plate 10 is less than the pressure on the second end face 12 side of the guide plate 10. Under the action of the pressure difference between the first end face 11 and the second end face 12, the gas can be transported to the crystal surface more efficiently and smoothly, which can better improve the crystal growth efficiency of silicon carbide.

[0050] As an example, the cross-section of the first sub-channel segment 211 can be constructed as a circle. For example... Figure 4 and Figure 5 As shown, the guide plate 10 can be formed with guide columns 13. The cross-section of the guide column 13 can be approximately elliptical. The guide column 13 can separate the second sub-flow channel section 212 from the second flow channel 22. There can be multiple guide columns 13, and multiple guide columns 13 can be arranged one-to-one with multiple gas flow channels 20. Each gas flow channel 20 can be provided with a corresponding guide column 13. One end of the guide column 13 can be located on the first end face 11, and the other end of the guide column 13 can extend towards the second end face 12, with the other end of the guide column 13 spaced apart from the second end face 12. The guide column 13 can be integrally formed with the guide plate 10, or the first end face 11 of the guide plate 10 can be formed with a snap-fit ​​groove, and the guide column 13 can be formed with a snap-fit ​​structure, so that the guide column 13 can be assembled with the guide plate 10, thereby achieving the effect of the guide column 13 separating the corresponding second sub-flow channel section 212 from the corresponding second flow channel 22.

[0051] As an example, both the inner wall of the gas flow channel 20 and the outer surface of the guide column 13 require polishing. The surface roughness of the inner wall of the gas flow channel 20 can be μ1, and the surface roughness of the outer surface of the guide column 13 can be μ2, satisfying the relationship: μ1≤3.2um, μ2≤3.2um. The units for the surface roughness of both the inner wall of the gas flow channel 20 and the outer surface of the guide column 13 can be "um". For example, the surface roughness of the inner wall of the gas flow channel 20 can be 1um, 2um, 2.5um, 3um, 3.2um, etc., and the surface roughness of the inner wall of the gas flow channel 20 only needs to be less than 3.2um. Any value, including the endpoint value, is an optional surface roughness of the inner wall of the gas flow channel 20 in this invention. If the surface roughness of the inner wall of the gas flow channel 20 is greater than 3.2um, it will affect the smoothness of gas flow within the gas flow channel 20. Therefore, the surface roughness of the outer surface of the guide column 13 is less than or equal to 3.2 μm, which can make the airflow in the gas channel 20 flow more smoothly.

[0052] For example, the surface roughness of the outer surface of the guide column 13 can be 1µm, 2µm, 2.5µm, 3µm, 3.2µm, etc., and the surface roughness of the outer surface of the guide column 13 can be less than 3.2µm. Any value, including the endpoint value, is an optional surface roughness of the outer surface of the guide column 13 in this invention. If the surface roughness of the outer surface of the guide column 13 is greater than 3.2µm, it will affect the smoothness of gas flow in the gas channel 20. Therefore, a surface roughness of the outer surface of the guide column 13 of less than or equal to 3.2µm can make the airflow in the gas channel 20 flow more smoothly.

[0053] In some embodiments of this utility model, such as Figure 2 , Figure 3 and Figure 4 As shown, the cross-sectional area of ​​the second sub-channel section 212 is smaller than the cross-sectional area of ​​the second channel 22.

[0054] The cross-sectional area of ​​the second sub-channel section 212 is smaller than that of the second channel 22, and the gas flow rate in the second sub-channel section 212 is greater than that in the second channel 22. According to Bernoulli's principle, the faster the flow rate, the lower the pressure. Therefore, the pressure in the second sub-channel section 212 is lower than that in the second channel 22. The second sub-channel section 212 (i.e., a part of the first channel 21) is located on the side of the second channel 22 near the central axis of the guide plate 10. When the gas flows from the second end face 12 side of the guide plate 10 to the first end face 11 side, the pressure difference between the second sub-channel section 212 and the second channel 22 causes the gas to accumulate towards the center of the crystal growth device 1. The seed crystal 41 is located at the center of the cover 40, which can accelerate the growth rate of silicon carbide crystals on the seed crystal 41 and further improve the crystal growth efficiency of silicon carbide.

[0055] like Figure 2 As shown, when crystal growth ends, the temperature drop in the crystal growth device 1 is delayed, and the gas in the crystal growth device 1 will still be transported upward. The guide plate 10 rotates so that the second end face 12 is above the first end face 11 along the thickness direction of the guide plate 10. The gas can flow into the second sub-channel section 212 and the second channel 22. The gas flow rate in the second sub-channel section 212 is faster, and the pressure in the second sub-channel section 212 is lower than that in the second channel 22. Under the action of the pressure difference between the second sub-channel section 212 and the second channel 22, some of the gas in the second channel 22 can flow into the second sub-channel section 212, thereby generating eddies and backflows in the gas in the second sub-channel section 212. This further restricts the flow of gas in the first channel 21 to the second end face 12, and can further block the transmission of gas toward the seed crystal 41. It can further block the continued growth of the crystal after crystal growth ends, thereby further reducing the risk of impurity crystal introduction due to continued crystal growth, and is more conducive to improving the quality of the crystals produced by the crystal growth device 1.

[0056] In some embodiments of this utility model, such as Figure 4 As shown, the first arc segment 221 protrudes to the side opposite to the first end face 11.

[0057] The first arc-shaped section 221 protrudes to the side away from the first end face 11. When the gas flows from the second end face 12 side of the guide plate 10 to the first end face 11 side, and the gas flows into the second flow channel 22 and the second sub-flow channel 212 respectively through the first sub-flow channel section 211, the first arc-shaped section 221 can play a guiding role, so that the gas flowing from the first flow channel 21 into the second flow channel 22 can change its flow direction more naturally, reduce gas turbulence and eddy phenomena, reduce the flow resistance encountered by the gas flowing from the first flow channel 21 into the second flow channel 22, and help to further improve the gas transmission efficiency.

[0058] After crystal growth is completed, the guide plate 10 rotates so that the second end face 12 is above the first end face 11 along the thickness direction of the guide plate 10. The gas in the second flow channel 22 flows to the first arc-shaped section 221. The first arc-shaped section 221 protrudes to the side away from the first end face 11, so that the gas in the first arc-shaped section 221 can collide with the arc-shaped inner wall of the first arc-shaped section 221 to generate vortices. The gas in the first arc-shaped section 221 can form a downward or other direction airflow. The gas in the first arc-shaped section 221 can collide with the gas in the first channel at the intersection and generate vortices and backflow, thereby further restricting the flow of gas in the first flow channel 21 to the second end face 12. This can further block the transmission of gas toward the seed crystal 41, further blocking the continued growth of the crystal after crystal growth, thereby further reducing the risk of impurity crystal introduction due to continued crystal growth, and is more conducive to improving the quality of the crystal produced by the crystal growth device 1.

[0059] In some embodiments of this utility model, such as Figure 4 As shown, the first arc segment 221 is constructed as a circular arc.

[0060] When gas flows from the second end face 12 side of the guide plate 10 to the first end face 11 side, and flows into the second flow channel 22 and the second sub-flow channel 212 respectively through the first sub-flow channel section 211, the gas flows into the second flow channel 22 through the arc-shaped first arc section 221 from the first sub-flow channel section 211. This can guide the gas from the first sub-flow channel section 211 into the second flow channel 22 more smoothly, and make the gas flow into the second flow channel 22 more smoothly and evenly. This reduces the probability of eddies and energy loss caused by sudden gas turning, and reduces the probability of excessively high or low local flow velocity in the gas flow channel 20. This is beneficial to further improve the stability of gas flowing towards the seed crystal 41 during the crystal growth process.

[0061] In some embodiments of this utility model, such as Figure 4 As shown, the first arc segment 221 has a first arc sidewall 2211 and a second arc sidewall 2212. The first arc sidewall 2211 is located between the second arc sidewall 2212 and the first end face 11. The angle between the tangent of the second arc sidewall 2212 adjacent to the first flow channel 21 and the thickness direction of the guide plate 10 is β, which satisfies the relationship: 75°≤β≤90°.

[0062] The first arc-shaped segment 221 has a first arc-shaped sidewall 2211 and a second arc-shaped sidewall 2212. Both the first arc-shaped sidewall 2211 and the second arc-shaped sidewall 2212 are adjacent to the first flow channel 21. The first arc-shaped sidewall 2211 can be located between the second arc-shaped sidewall 2212 and the first end face 11. That is, when the guide plate 10 is used to guide the gas in the crystal growth device 1 to be transported toward the seed crystal 41, and the first end face 11 is located above the second end face 12, the first arc-shaped sidewall 2211 is located above the second arc-shaped sidewall 2212. For example, the angle between the tangent at the junction of the second arc-shaped sidewall 2212 and the first flow channel 21 and the thickness direction of the guide plate 10 can be 75°, 80°, 85°, 90°, etc. The angle between the tangent at the junction of the second arc-shaped sidewall 2212 and the first flow channel 21 and the thickness direction of the guide plate 10 can be within the range of 75° to 90°. Any value, including the endpoint value, is an optional angle between the tangent at the junction of the second arc-shaped sidewall 2212 and the first flow channel 21 and the thickness direction of the guide plate 10.

[0063] If the angle between the tangent at the junction of the second arc-shaped sidewall 2212 and the first flow channel 21 and the thickness direction of the guide plate 10 is less than 75°, when gas flows into the gas flow channel 20 from the first end face 11 of the guide plate 10, the first arc-shaped section 221 may not be able to restrict the flow of gas in the first flow channel 21 towards the second end face 12. After crystal growth is completed, the crystal may continue to grow, which may affect the quality of the crystal. If the angle between the tangent at the junction of the second arc-shaped sidewall 2212 and the first flow channel 21 and the thickness direction of the guide plate 10 is greater than 90°, when gas flows from the second end face 12 of the guide plate 10 towards the first end face 11, it affects the smoothness of the gas flow through the junction of the second arc-shaped sidewall 2212 and the first flow channel 21, affecting the stability of the gas flow. Therefore, the angle between the tangent at the junction of the second arc-shaped sidewall 2212 and the first flow channel 21 and the thickness direction of the guide plate 10 is between 75° and 90°, which is beneficial to improving the smoothness of gas flow from the second end face 12 side to the first end face 11 side of the guide plate 10. When gas flows into the gas flow channel 20 from the first end face 11 side of the guide plate 10, the first arc-shaped section 221 can restrict the gas in the first flow channel 21 from flowing to the second end face 12 side, which can better block the continued growth of crystals after crystal growth, thereby further reducing the risk of impurity crystal introduction due to continued crystal growth, which is beneficial to further improving the quality of crystals produced by the crystal growth device 1.

[0064] In some embodiments of this utility model, such as Figure 4 As shown, the second flow channel 22 has a second arc-shaped segment 222 adjacent to the other end, and the second arc-shaped segment 222 protrudes to the side away from the first flow channel 21.

[0065] The second flow channel 22 has a second arc-shaped segment 222, which can be adjacent to the other end of the second flow channel 22. The second arc-shaped segment 222 can be located at the end of the second flow channel 22 that is connected to the first end face 11. The second arc-shaped segment 222 protrudes to the side away from the first flow channel 21. When gas flows from the first end face 11 side of the guide plate 10 to the second end face 12 side, and the gas flows into the second sub-channel section 212 and the second channel 22 respectively, the second arc-shaped section 222 can play a guiding role, so that the gas can flow smoothly into the second channel 22, reducing the phenomenon of gas turbulence and eddies in the second arc-shaped section 222, reducing the risk that the gas cannot flow to the first arc-shaped section 221, causing the first arc-shaped section 221 to be unable to restrict the gas in the first channel 21 to flow to the second end face 12 side after the guide plate 10 flips. This is beneficial to further block the transmission of gas to the seed crystal 41 after crystal growth, and can better block the continued growth of crystal after crystal growth, thereby further reducing the risk of impurity crystal introduction due to continued crystal growth, which is beneficial to further improve the quality of crystals produced by the crystal growth device 1.

[0066] In some embodiments of this utility model, such as Figure 4 As shown, the second arc-shaped segment 222 has a first flow channel sidewall 2221 and a second flow channel sidewall 2222. The second flow channel sidewall 2222 is located on the side of the first flow channel sidewall 2221 away from the first flow channel 21. The first flow channel sidewall 2221 is arc-shaped. The angle between the tangent of the first flow channel sidewall 2221 and the other end adjacent to it and the thickness direction of the guide plate 10 is α, which satisfies the relationship: 0°≤α≤15°.

[0067] The second arc-shaped segment 222 has a first flow channel sidewall 2221 and a second flow channel sidewall 2222. Both the first flow channel sidewall 2221 and the second flow channel sidewall 2222 are adjacent to the first end face 11. Along the arrangement direction of the first flow channel 21 and the second arc-shaped segment 222, the second flow channel sidewall 2222 is located on the side of the first flow channel sidewall 2221 facing away from the first flow channel 21. The first flow channel 21 and the second arc-shaped segment 222 can be separated by a guide column 13. The cross-section of the guide column 13 can be constructed as a near-ellipse, and the first flow channel sidewall 2221 can be arc-shaped. The adjoining point between the first flow channel sidewall 2221 and the other end of the second flow channel 22 can be the adjoining point between the side of the guide column 13 facing the second flow channel 22 and the first end face 11.

[0068] For example, the angle between the tangent of the first flow channel sidewall 2221 adjacent to the other end and the thickness direction of the guide plate 10 can be 0°, 5°, 10°, 15°, etc. The angle between the tangent of the first flow channel sidewall 2221 adjacent to the other end and the thickness direction of the guide plate 10 can be within the range of 0° to 15°. Any value, including the endpoint value, is an optional angle of the tangent of the first flow channel sidewall 2221 adjacent to the other end and the thickness direction of the guide plate 10. If the angle between the tangent of the first flow channel sidewall 2221 adjacent to the other end and the thickness direction of the guide plate 10 is less than 0°, it will affect the smoothness of the gas entering the second flow channel 22 and the stability of the gas flow. If the angle between the tangent of the second arc-shaped sidewall 2212 adjacent to the first flow channel 21 and the thickness direction of the guide plate 10 is greater than 15°, it may cause vortices to form in the gas at the first flow channel sidewall 2221 adjacent to the other end, affecting the gas transmission efficiency. Therefore, the angle between the tangent at the junction of the first flow channel sidewall 2221 and the other end and the thickness direction of the guide plate 10 is between 0° and 15°, which is beneficial to further improve the smoothness of gas flow, reduce the probability of gas generating eddies, and further improve the gas transmission efficiency.

[0069] In some embodiments of this utility model, the cross-sectional area of ​​the second flow channel 22 remains unchanged along the extending direction of the second flow channel 22.

[0070] Along the extension direction of the second flow channel 22, the cross-sectional area of ​​the second flow channel 22 remains unchanged, which allows the gas to flow stably within the second flow channel 22 and improves the gas transmission efficiency.

[0071] The crystal growth apparatus 1 according to the second aspect of the present invention includes the flow guide plate 10 for the crystal growth apparatus 1 in the above embodiment.

[0072] According to the crystal growth apparatus 1 of the present application embodiment, using the guide plate 10 in the above embodiment can improve the crystal growth efficiency of the crystal growth apparatus 1, reduce the probability that the crystal will continue to grow after the crystal growth is completed, and improve the quality of the crystal produced by the crystal growth apparatus 1.

[0073] In some embodiments of this utility model, such as Figure 1 and Figure 2 As shown, the crystal growth device 1 may further include: a driving device 30, which is connected to the guide plate 10 and is used to drive the guide plate 10 to rotate.

[0074] The driving device 30 can be located outside the gas transmission zone 60. The driving device 30 can be installed through the side wall of the main body 50 of the device. The driving device 30 can be connected to the guide plate 10 and can drive the guide plate 10 to rotate. During the crystal growth process, when the guide plate 10 is used to guide the gas in the crystal growth device 1 towards the seed crystal 41, the first end face 11 of the guide plate 10 is located above the second end face 12. After the crystal growth is completed, the driving device 30 can drive the guide plate 10 to rotate 180°, and the second end face 12 of the guide plate 10 is located above the first end face 11. Before the temperature of the crystal growth device 1 is effectively reduced, the guide plate 10 can block the transmission of silicon carbide gas to the seed crystal 41, reducing the probability of the crystal continuing to grow after the crystal growth is completed, thereby effectively improving the quality of the crystal produced by the crystal growth device 1.

[0075] As an example, the driving device 30 may include a drive motor with a motor shaft, which can be fixedly connected to the guide plate 10. The drive motor can drive the motor shaft to rotate, thereby causing the guide plate 10 to rotate. After crystal growth is completed, the driving device 30 operates, driving the guide plate 10 to rotate 180°. Multiple driving devices 30 can be used, and these devices can be arranged circumferentially along the guide plate 10. Multiple driving devices 30 can collectively drive the guide plate 10 to rotate, such as... Figure 1 As shown, this application embodiment uses two drive devices 30 as an example for explanation. The two drive devices 30 can be arranged opposite each other and spaced apart along the radial direction of the guide plate 10.

[0076] Other configurations and operations of the flow guide plate 10 and crystal growth device 1 according to the embodiments of the present invention are known to those skilled in the art and will not be described in detail here.

[0077] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0078] Although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A flow guide plate for a crystal growth device, characterized in that, include: The guide plate (10) has a gas flow channel (20), which includes a first flow channel (21) and a second flow channel (22). Along the thickness direction of the guide plate (10), the guide plate (10) has a first end face (11) and a second end face (12). The first flow channel (21) extends along the thickness direction of the guide plate (10) and extends to the first end face (11) and the second end face (12) respectively at both ends. The second flow channel (22) is located on one side of the first flow channel (21). One end of the flow channel (22) has a first arcuate segment (221) that extends to the sidewall of the first flow channel (21) to connect the first flow channel (21) and the second flow channel (22). The other end of the second flow channel (22) extends to the first end face (11). The first arcuate segment (221) is configured to restrict the flow of gas in the first flow channel (21) to the second end face (12) when gas flows into the gas flow channel (20) from the first end face (11) side.

2. The flow guide plate for a crystal growth device according to claim 1, characterized in that, The first flow channel (21) includes a first sub-flow channel segment (211) and a second sub-flow channel segment (212) connected together. The second sub-flow channel segment (212) is located between the first sub-flow channel segment (211) and the first end face (11). The first arc-shaped segment (221) is connected to at least one of the first sub-flow channel segment (211) and the second sub-flow channel segment (212). The cross-sectional area of ​​the first sub-flow channel segment (211) is greater than the cross-sectional area of ​​the second sub-flow channel segment (212), and the cross-sectional area of ​​the first sub-flow channel segment (211) is greater than the cross-sectional area of ​​the second flow channel (22).

3. The flow guide plate for a crystal growth device according to claim 2, characterized in that, The cross-sectional area of ​​the second sub-channel section (212) is smaller than the cross-sectional area of ​​the second channel (22).

4. The flow guide plate for a crystal growth device according to claim 1, characterized in that, The first arc-shaped segment (221) protrudes to the side opposite to the first end face (11).

5. The flow guide plate for a crystal growth device according to claim 4, characterized in that, The first arc segment (221) is constructed as a circular arc.

6. The flow guide plate for a crystal growth device according to claim 4, characterized in that, The first arc segment (221) has a first arc sidewall (2211) and a second arc sidewall (2212). The first arc sidewall (2211) is located between the second arc sidewall (2212) and the first end face (11). The angle between the tangent of the second arc sidewall (2212) adjacent to the first flow channel (21) and the thickness direction of the guide plate (10) is β, which satisfies the relationship: 75°≤β≤90°.

7. The flow guide plate for a crystal growth device according to claim 1, characterized in that, The second flow channel (22) has a second arc-shaped segment (222) adjacent to the other end, the second arc-shaped segment (222) protruding to the side away from the first flow channel (21).

8. The flow guide plate for a crystal growth device according to claim 7, characterized in that, The second arc-shaped segment (222) has a first flow channel sidewall (2221) and a second flow channel sidewall (2222). The second flow channel sidewall (2222) is located on the side of the first flow channel sidewall (2221) away from the first flow channel (21). The first flow channel sidewall (2221) is arc-shaped. The angle between the tangent of the first flow channel sidewall (2221) and the other end adjacent to it and the thickness direction of the guide plate (10) is α, which satisfies the relationship: 0°≤α≤15°.

9. The flow guide plate for a crystal growth device according to claim 1, characterized in that, Along the extension direction of the second flow channel (22), the cross-sectional area of ​​the second flow channel (22) remains unchanged.

10. A crystal growth apparatus, characterized in that, Includes a flow guide plate (10) for the crystal growth device (1) according to any one of claims 1-9.

11. The crystal growth apparatus according to claim 10, characterized in that, Also includes: A driving device (30) is connected to the guide plate (10) and is used to drive the guide plate (10) to rotate.

Images