High-capacity low-ESR laminated solid aluminum capacitor

Abstract

The utility model discloses a high-capacity low-ESR laminated solid-state aluminum capacitor which comprises a shunt capacitor body, and the shunt capacitor body comprises a plurality of capacitor split bodies which are stacked up and down and connected in parallel. Each capacitor split body comprises a plurality of capacitor chips, a conduction frame and a shell, the capacitor chips and the conduction frame are arranged in the shell, the two surfaces of the conduction frame are both provided with a plurality of superposed capacitor chips, an anode pin and a cathode pin are respectively led out from the two sides, facing the shell, of the conduction frame, and the anode pin and the cathode pin are connected with the shell. The anode pins of the plurality of capacitor split bodies are connected in a conductive manner, and the cathode pins of the plurality of capacitor split bodies are connected in a conductive manner. According to the invention, the plurality of capacitor split bodies which are stacked up and down and connected in parallel are arranged, and the anode pin and the cathode pin of each capacitor split body are connected in a conducting manner, so that the capacity and the yield of the capacitor can be effectively improved.

Description

Technical Field

[0001] This invention relates to the field of aluminum electrolytic capacitor technology, and more specifically, to a high-capacity, low-ESR multilayer solid aluminum capacitor. Background Technology

[0002] As an indispensable component in electronic circuits, multilayer solid aluminum capacitors are mainly composed of multiple capacitor units stacked on the front and back of a conductive connection frame. During the manufacturing process, the anode is fixed by resistance welding layer by layer, and the cathode is fixed by single-point conductive silver paste bonding. Then, they are encapsulated with insulating material, leaving positive and negative leads to pass through the insulating material to connect to the outside. The positive and negative leads outside the insulating material are then bent to the bottom of the finished product for use as surface mount pads. The multilayer welding process directly affects the capacitance, equivalent series resistance (ESR), and product yield of the finished capacitor.

[0003] With the continuous development of power supply, automotive electronics, industrial control and other fields, the demand will continue to increase. Therefore, how to improve the product yield of multilayer solid aluminum capacitors and reduce the equivalent series resistance (ESR) has become an urgent technical problem to be solved.

[0004] Chinese invention patent 201711151480.1 discloses a multilayer capacitor, comprising multiple stacked cells and positive and negative terminals electrically connected to the cells. Each cell includes a positive terminal, a negative terminal, and a shielding wire located between the positive and negative terminals. The negative terminals of each cell are connected together and connected to the negative terminal. The positive terminals of each cell are connected together and connected to the positive terminal. The negative terminal of each cell includes a dielectric film, a solid electrolyte layer, a carbon paste layer, and a silver paste layer sequentially coated on the surface of the positive electrode foil. The outer surface of the multiple cells is encapsulated with an insulating resin layer. The multilayer capacitor also includes an anti-sulfurization protective frame near the negative terminal to prevent sulfur and sulfides in the air from contacting the silver paste layer. Although the above invention patent has good anti-sulfurization effect, the capacitance of this polymer capacitor structure is relatively small and the equivalent series resistance is relatively large, which cannot meet the requirements of high-current operating environments.

[0005] Therefore, there is an urgent need to find a technical solution to further increase the capacitance of polymer multilayer capacitors while reducing the equivalent series resistance of the capacitors. Utility Model Content

[0006] Therefore, it is necessary to provide a multilayer solid aluminum capacitor with stable structure, large capacity and low ESR, and its manufacturing method to address the above-mentioned technical problems.

[0007] To address the aforementioned technical problems, this invention provides a high-capacity, low-ESR multilayer solid aluminum capacitor and its manufacturing method, employing the following technical solution:

[0008] This invention proposes a high-capacity, low-ESR multilayer solid aluminum capacitor, which includes a parallel capacitor body comprising several capacitor segments stacked in parallel. Each capacitor segment includes several capacitor chips, a conductive frame, and a housing. The capacitor chips and the conductive frame are disposed within the housing. Several stacked capacitor chips are provided on both sides of the conductive frame. Anode and cathode leads are respectively led out from the conductive frame to both sides of the housing. The anode leads of the several capacitor segments are electrically connected to each other, and the cathode leads of the several capacitor segments are electrically connected to each other.

[0009] Furthermore, the parallel capacitor body is a type A parallel capacitor body, which includes a type A first component and a type A second component. The type A first component and the type A second component are stacked and connected in parallel, and the parallel connection between the type A first component and the type A second component is a pin-to-pin contact parallel connection.

[0010] Furthermore, the parallel capacitor body is a type B parallel capacitor body, which includes a type B first component and a type B second component. The type B first component and the type B second component are stacked on top of each other and connected in parallel through a connecting frame.

[0011] Furthermore, the connecting frame includes a C-shaped first connecting frame and a second connecting frame that are fastened to the left and right sides of the second B-shaped component.

[0012] Furthermore, the parallel capacitor body is a type A parallel capacitor body, which includes a type A third component, a type A first component, and a type A second component that are stacked and connected in parallel. The type A third component, type A first component, and type A second component are connected in parallel with pin contact.

[0013] Furthermore, the parallel capacitor body is a type B parallel capacitor body, which includes a type B first component, a type B second component, and a type B third component stacked sequentially. The type B first component, type B second component, and type B third component are connected in parallel through a connecting frame.

[0014] Furthermore, the capacitor chip has an anode region and a cathode region, and a number of silver paste dots are provided between the cathode regions of the capacitor chip and between the cathode region of the capacitor chip and the conductive frame.

[0015] Furthermore, the silver paste dots are configured as four-dot, six-dot, or nine-dot patterns.

[0016] Furthermore, an adhesive layer is provided between each capacitor component.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] The high-capacity, low-ESR multilayer solid aluminum capacitor provided by this invention uses several capacitor units stacked in parallel. The anode and cathode pins of each capacitor unit are connected in parallel, reducing the gap between the anode terminals of the surface mount components and reducing the extrusion stress of epoxy resin on the anode terminals during encapsulation. The addition of adhesive between two capacitors improves the integrity of the connection. Compared with capacitor chips of the same number of layers but encapsulated in a single capacitor, this invention can effectively improve the capacitor capacity and yield.

[0019] The high-capacity, low-ESR multilayer solid aluminum capacitor provided by this invention features multi-point silver paste dots in the cathode region of the capacitor chip, increasing the contact area between the silver-immersed layers of each capacitor chip, improving conductivity, and effectively reducing ESR. Attached Figure Description

[0020] To more clearly illustrate the solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of the high-capacity, low-ESR multilayer solid aluminum capacitor of Embodiment 1 of the present invention;

[0022] Figure 2 This is an exploded view of the structure of the high-capacity, low-ESR multilayer solid aluminum capacitor of Embodiment 1 of the present invention.

[0023] Figure 3 This is a schematic diagram of the structure of the high-capacity, low-ESR multilayer solid aluminum capacitor of Embodiment 2 of the present invention;

[0024] Figure 4 This is an exploded view of the structure of the high-capacity, low-ESR multilayer solid aluminum capacitor of Embodiment 2 of the present invention.

[0025] Figure 5 This is an exploded view of the structure of the high-capacity, low-ESR multilayer solid aluminum capacitor of Embodiment 7 of the present invention.

[0026] Figure 6 This is an exploded view of the structure of the high-capacity, low-ESR multilayer solid aluminum capacitor of Embodiment 8 of the present invention.

[0027] Figure 7This is a schematic diagram of the single-point silver paste dot setting in the cathode region of the capacitor chip of the large-capacity, low-ESR multilayer solid aluminum capacitor proposed in this invention.

[0028] Figure 8 This is a schematic diagram of the four silver paste dots on the cathode region of the capacitor chip of the large-capacity, low-ESR multilayer solid aluminum capacitor proposed in this invention.

[0029] Figure 9 This is a schematic diagram of the six silver paste dots in the cathode region of the capacitor chip of the large-capacity, low-ESR multilayer solid aluminum capacitor proposed in this invention.

[0030] Figure 10 This is a schematic diagram of the nine silver paste dots in the cathode region of the capacitor chip of the large-capacity, low-ESR multilayer solid aluminum capacitor proposed in this invention.

[0031] Explanation of reference numerals in the attached figures:

[0032] Type A parallel capacitor body 1, Type A first component 11, Type A second component 12, Type A first pin 111, Type A second pin 112, Type A third pin 121, Type A fourth pin 122, Type A first adhesive layer 123, capacitor chip 3, anode area 31, silicone layer 142, cathode area 33, silver paste point 34.

[0033] Type B parallel capacitor body 2, Type B first component 21, Type B second component 22, Type B first pin 211, Type B second pin 212, Type B third pin 221, Type B fourth pin 222, Type B first adhesive layer 223, first connecting frame 23, second connecting frame 24.

[0034] Type A parallel capacitor body 1', Type A third component 13, Type A fifth pin 131, Type A sixth pin 132, Type A second adhesive layer 113;

[0035] Type B parallel capacitor body 2', Type B third component 25, Type B fifth pin 251, Type B sixth pin 252, Type B second adhesive layer 253, third connecting frame 26, fourth connecting frame 27. Detailed Implementation

[0036] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0037] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0038] Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0039] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0040] Example 1

[0041] Please refer to Figures 1-2 This embodiment provides a high-capacity, low-ESR multilayer solid aluminum capacitor, which includes an A-type parallel capacitor body 1. The A-type parallel capacitor body 1 includes an A-type first component 11 and an A-type second component 12. The A-type first component 11 and the A-type second component 12 are stacked and connected in parallel, and the parallel connection between the A-type first component 11 and the A-type second component 12 is a pin-to-pin contact parallel connection. Specifically, the A-type first component 11 and the A-type second component 12 are respectively provided with an anode pin and a cathode pin, and the anode pins of the A-type first component 11 and the A-type second component 12 are welded to each other for conduction, and the cathode pins of the first component 11 and the A-type second component 12 are welded to each other for conduction.

[0042] Specifically, both the first type A component 11 and the second type A component 12 include a capacitor chip 3, a conductive frame, and a housing. The capacitor chip 3 and the conductive frame are disposed within the housing. The capacitor chip 3 is divided into an anode area 31 and a cathode area 33 by a silicone strip 32. Further, two stacked capacitor chips 3 are provided on both sides of the conductive frame. The anode areas of the capacitor chips 3 are connected to each other and to the connecting frame by laser welding. The cathode areas of the capacitor chips 3 are connected to each other and to the conductive frame by silver paste. Specifically, several silver paste dots 34 are provided between the cathode areas of the capacitor chips 3 and between the cathode area of ​​the aluminum foil and the conductive frame. In this embodiment, for example... Figure 8 As shown, the silver paste dots 34 are arranged in a four-point configuration, where four silver paste dots 34 are evenly spaced in two rows and two columns.

[0043] Furthermore, in the first split 11 of type A, after the conductive frame is connected to the anode area of ​​the capacitor chip 3, a first pin 111 of type A is led out from the left side of the housing. The first pin 111 of type A is the anode pin. After the conductive frame is connected to the cathode area of ​​the capacitor chip 3, a second pin 112 of type A is led out from the right side of the housing. The second pin 112 of type A is the cathode pin. The first pin 111 of type A and the second pin 112 of type A extend vertically downward toward the second split 12.

[0044] Furthermore, in the second component 12, after the conductive frame is connected to the anode region of the capacitor chip 3, a type A third pin 121 is led out from the left side of the housing. The type A third pin 121 is the anode pin. After the conductive frame is connected to the cathode region of the capacitor chip 3, a type A fourth pin 122 is led out from the right side of the housing. The type A third pin 121 is the cathode pin. The type A third pin 121 and type A fourth pin 122 extend vertically downwards until they protrude from the bottom of the housing of the type A second component 12 and then bend inwards. In use, the type A third pin 121 and type A fourth pin 122 are soldered to the external circuit board at the bent part at the bottom of the housing.

[0045] Furthermore, a first adhesive layer 123 of type A is provided between the bottom surface of the housing of the first type A component 11 and the top surface of the housing of the second type A component 12 to fix them together. The first type A pin 111 and the second type A pin 112 are led out from the left and right sides of the housing of the first type A component 11 and are electrically connected to the third type A pin 121 and the fourth type A pin 122 in the vertical direction, respectively. Specifically, the first type A pin 111 is led out from the left side of the housing of the first type A component 11 and covers and adheres to the outer surface of the third type A pin 121 in the vertical direction, and a conductive connecting material is provided between the first type A pin 111 and the third type A pin 121. The second type A pin 112 is led out from the right side of the housing of the first type A component 11 and covers and adheres to the outer surface of the fourth type A pin 122 in the vertical direction, and a conductive connecting material is provided between the second type A pin 112 and the fourth type A pin 122.

[0046] The method for fabricating a high-capacity, low-ESR multilayer solid aluminum capacitor proposed in this embodiment includes the following steps:

[0047] S1. Cut and punch aluminum foil into aluminum foil sheets;

[0048] S2. Weld aluminum foil sheets onto the carrier strip, apply release adhesive to the aluminum foil sheets and dry them to divide the anode and cathode areas. The release adhesive is silicone strip 32. The release adhesive can prevent the polymer in the cathode area from crawling to the anode area and causing a short circuit in the product.

[0049] S3. The cathode area of ​​the aluminum foil sheet after step S2 is impregnated in an impregnation solution to repair the oxide film damaged during the punching process. The impregnation solution is an ammonium adipic acid solution.

[0050] S4. The aluminum foil sheet that has completed step S3 is impregnated with chemical polymerization or dispersion solution to generate a polymer layer in the cathode area of ​​the aluminum foil sheet. Then, a carbon layer is impregnated and wrapped around the polymer layer, and a silver layer is impregnated and wrapped around the carbon layer to form a complete capacitor chip 3.

[0051] S5. Two capacitor chips 3 are stacked on the front and back sides of the conductive frame by means of a fixing device. The cathode areas of adjacent capacitor chips 3 and the cathode areas of capacitor chips 3 are bonded and fixed to the conductive frame by four silver paste dots 34.

[0052] S6. The conductive frame with four stacked capacitor chips 3 from S5 is sent to the welding equipment for laser welding of the positive electrode area. The welding width is the same as the width of the capacitor chip 3. Laser welding increases the contact area between the anode area and the connecting frame, and reduces the burrs from multiple welding operations in the anode area.

[0053] S7. After encapsulating the four capacitor chips 3 and the conducting frame that were welded in S6 with epoxy resin to form a capacitor with a shell, the capacitor is then aged.

[0054] S8. Take an S7 packaged capacitor that has aged, and bend the left and right leads of its connecting frame downwards vertically to form type A first pin 111 and type A second pin 112. This capacitor is type A first split 11. Take another S7 packaged capacitor that has aged, and bend the left and right leads of its connecting frame downwards vertically to the bottom of the capacitor shell, and then bend them 90 degrees inwards to form type A third pin 121 and type A fourth pin 122. This capacitor is type A second split 12.

[0055] S9. Connect the first type A component 11 and the second type A component 12 in parallel, and fix the shells together by the first type A adhesive layer 123. After aligning the first type A pin 111 and the third type A pin 121 and the second type A pin 112 and the fourth type A pin 122, apply conductive connecting material to fix them. Then, reflow soldering is performed to make the first type A component 11 and the second type A component 12 form a conductive connection, forming a large-capacity low ESR multilayer solid aluminum capacitor.

[0056] Ten multilayer solid capacitors from Example 1 were tested for performance using standard testing methods. The sample specifications were 100μF 25V, with the aluminum foil specification being 38VF. The test results are shown in Table 1 below.

[0057]

[0058] Example 2

[0059] Please refer to Figures 3-4 This embodiment provides a high-capacity, low-ESR multilayer solid aluminum capacitor, which includes a type B parallel capacitor body 2. The type B parallel capacitor body 1 includes a type B first component 21 and a type B second component 22. The type B first component 21 and type B second component 22 are stacked and connected in parallel. Specifically, the type B first component 21 and type B second component 22 are respectively provided with an anode pin and a cathode pin, and the anode pins of the type B first component 21 and type B second component 22 are electrically connected to each other, and the cathode pins of the type B first component 21 and type B second component 22 are electrically connected to each other.

[0060] In this embodiment, the internal structure of the type B first component 21 and type B second component 22 is the same as the internal structure of the type A first component 11 and type A second component 12 in embodiment 1.

[0061] Furthermore, in the first type B component 21, after the conductive frame is connected to the anode region of the capacitor chip 3, a first type B pin 211 is led out from the housing. The first type B pin 211 is the anode pin. After the conductive frame is connected to the cathode region of the capacitor chip 3, a second type B pin 212 is led out from the housing. The second type B pin 212 is the cathode pin. The first type B pin 211 and the second type B pin 212 are led out from the left and right sides of the housing of the first type B component 21 and extend vertically to protrude from the bottom of the housing of the first type B component 21 before bending into the interior of the housing of the first type B component 21.

[0062] Furthermore, in the second type B component 22, after the conductive frame is connected to the anode region of the capacitor chip 3, a third type B pin 221 is led out from the housing. The third type B pin 221 is the anode pin. After the conductive frame is connected to the cathode region of the capacitor chip 3, a fourth type B pin 222 is led out from the housing. The fourth type B pin 222 is the cathode pin. Specifically, the third type B pin 221 and the fourth type B pin 222 are led out from the left and right sides of the housing and extend vertically upwards to protrude from the top of the housing of the second type B component 22 before bending inwards into the housing of the second type B component 22.

[0063] Furthermore, a first adhesive layer 223 of type B is provided between the bottom surface of the shell of the first type B component 21 and the top surface of the shell of the second type B component 22 to fix them together.

[0064] Furthermore, the first type B component 21 and the second type B component 22 are connected by a connecting frame, which includes a first connecting frame 23 and a second connecting frame 24 that are C-shaped and fastened to the left and right sides of the second type B component 22.

[0065] Specifically, the top and bottom surfaces of the first connecting frame 23 are connected to the first pin 211 and the third pin 221 of type B respectively through conductive material, and then extend downward to protrude from the bottom of the second part 22 of type B and then bend into the interior of the second part 22 of type B; the top and bottom surfaces of the second connecting frame 24 are connected to the first pin 211 and the third pin 221 of type B respectively through conductive material, and then extend downward to protrude from the bottom of the second part 22 of type B and then bend into the interior of the second part 22 of type B.

[0066] The difference between the fabrication method of the high-capacity, low-ESR multilayer solid aluminum capacitor proposed in this embodiment and the fabrication method in Example 1 is as follows:

[0067] S8. Take an S7 packaged capacitor that has aged, bend the left and right leads of its connecting frame downwards vertically, and then bend its vertical extension end, which protrudes from the bottom surface of the capacitor shell, toward the inside of the capacitor to form a type B first pin 211 and a type B second pin 212. This capacitor is a type B first split 21. Take another S7 packaged capacitor that has aged, bend the left and right leads of its connecting frame upwards vertically, and then bend its vertical extension end, which protrudes from the top surface of the capacitor shell, toward the inside of the capacitor to form a type B third pin 221 and a type B fourth pin 222. This capacitor is a type B second split 22.

[0068] S9. Connect the first type B component 21 and the second type B component 22 in parallel, with the housings connected and fixed by the first type B adhesive layer 223. Attach the first connecting frame 23 to the left outer side of the second type B component 22. After the top and bottom surfaces of the first connecting frame 23 are coated with conductive connecting material, they are aligned and fixed to the first type B pin 211 and the third type B pin 221, respectively. Attach the second connecting frame 24 to the right outer side of the second type B component 22. After the top and bottom surfaces of the second connecting frame 24 are coated with conductive connecting material, they are aligned and fixed to the second type B pin 212 and the fourth type B pin 222, respectively. Then, reflow soldering is performed to make the first type B component 21 and the second type B component 22 form a conductive connection, thus forming a large-capacity, low-ESR multilayer solid aluminum capacitor.

[0069] Ten multilayer solid capacitors from Example 2 were tested for performance using standard testing methods. The sample specifications were 100μF 25V, with the aluminum foil specification being 38VF. The test results are shown in Table 2 below.

[0070]

[0071] Example 3

[0072] This embodiment provides a high-capacity, low-ESR multilayer solid aluminum capacitor. The difference between this embodiment and Embodiment 1 lies only in the arrangement of the silver paste points 34 between the cathode regions of the capacitor chips 3 in the first type A component 11 and the second type A component 12, and between the cathode region of the capacitor chip 3 and the conductive frame, in a six-point configuration. Figure 9 As shown, the six-point pattern is arranged in three rows and two columns with even intervals.

[0073] Ten multilayer solid capacitors from Example 3 were tested for performance using standard testing methods. The sample specifications were 100μF 25V. The test results are shown in Table 3 below.

[0074]

[0075] Example 4

[0076] This embodiment provides a high-capacity, low-ESR multilayer solid aluminum capacitor. The difference between this embodiment and Embodiment 1 lies only in the arrangement of the silver paste points 34 between the cathode regions of the capacitor chips 3 in the first type A component 11 and the second type A component 12, and between the cathode region of the capacitor chip 3 and the conductive frame, in a nine-point configuration. Figure 10 As shown, the nine-point pattern is arranged in three rows and three columns with even intervals.

[0077] Ten multilayer solid capacitors from Example 4 were tested for performance using standard testing methods. The sample specifications were 100μF 25V, with the aluminum foil specification being 38VF. The test results are shown in Table 4 below.

[0078]

[0079] Example 5

[0080] This embodiment provides a high-capacity, low-ESR multilayer solid aluminum capacitor. The only difference between this embodiment and Embodiment 2 is that the silver paste points 34 between the cathode regions of the capacitor chips 3 of the type B first component 21 and type B second component 22, and between the cathode region of the capacitor chip 3 and the conductive frame, are arranged in a six-point configuration.

[0081] Ten multilayer solid capacitors from Example 5 were tested for performance using standard testing methods. The sample specifications were 100μF 25V, with the aluminum foil specification being 38VF. The test results are shown in Table 5 below.

[0082]

[0083] Example 6

[0084] This embodiment provides a high-capacity, low-ESR multilayer solid aluminum capacitor. The only difference between this embodiment and Embodiment 2 is that the silver paste points 34 between the cathode regions of the capacitor chips 3 of the type B first component 21 and type B second component 22, and between the cathode region of the capacitor chip 3 and the conductive frame, are arranged in a nine-point configuration.

[0085] Ten multilayer solid capacitors from Example 6 were tested for performance using standard testing methods. The sample specifications were 100μF 25V, with the aluminum foil specification being 38VF. The test results are shown in Table 6 below.

[0086]

[0087] Example 7

[0088] like Figure 5As shown, this embodiment provides a large-capacity, low-ESR multilayer solid aluminum capacitor. As a further improvement on Embodiment 1, it includes an A-type parallel capacitor body 1'. The A-type parallel capacitor body 1' includes an A-type third component 13, an A-type first component 11, and an A-type second component 12, which are stacked and connected in parallel. The connection method between the A-type first component 11 and the A-type second component 12 is the same as in Embodiment 1. The structure of the A-type third component 13 is the same as that of the A-type first component 11. Specifically, in the A-type third component 13, after the conductive frame is connected to the anode region of the capacitor chip 3, an A-type fifth pin 131 is led out from the housing. The A-type fifth pin 131 is the anode pin. After the conductive frame is connected to the cathode region of the capacitor chip 3, an A-type sixth pin 132 is led out from the housing. The A-type sixth pin 132 is the cathode pin. The A-type fifth pin 131 and the A-type sixth pin 132 extend vertically downward towards the first component 11.

[0089] Furthermore, a second adhesive layer 113 of type A is provided between the bottom surface of the housing of the third type A component 13 and the top surface of the housing of the first type A component 11 for mutual fixation. The fifth type A pin 131 extends from the left side of the housing of the third type A component 13 and vertically covers and adheres to the outer surface of the first type A pin 111, with a conductive connecting material between the fifth type A pin 131 and the first type A pin 111. The sixth type A pin 132 extends from the right side of the housing of the third type A component 13 and vertically covers and adheres to the outer surface of the second type A pin 112, with a conductive connecting material between the sixth type A pin 132 and the second type A pin 112. Furthermore, the conductive material is a conductive connecting material.

[0090] Ten multilayer solid capacitors from Example 7 were tested using standard testing methods. The sample specifications were 100μF 25V, and the test results are shown in Table 7 below. In this comparative example, the aluminum foil specification was changed to 49VF (increasing the thickness of the aluminum foil oxide film, thus reducing the capacitance value) to ensure that the capacitance of the three capacitors connected in parallel did not exceed the upper limit of 120μF for the 100μF specification.

[0091]

[0092] Example 8

[0093] like Figure 6As shown, this embodiment provides a large-capacity, low-ESR multilayer solid aluminum capacitor. As a further improvement on embodiment 2, it includes a type B parallel capacitor body 2'. The type B parallel capacitor body 2' includes a type B first component 21, a type B second component 22, and a type B third component 25 that are stacked and connected in parallel. The connection method between the type B first component 21 and the type B second component 22 is the same as that in embodiment 2. The structure of the type B third component 25 is the same as that of the type B second component 22.

[0094] Furthermore, in the type B third component 25, after the conductive frame is connected to the anode region of the capacitor chip 3, a type B fifth pin 251 is led out from the housing. The type B fifth pin 251 is the anode pin. After the conductive frame is connected to the cathode region of the capacitor chip 3, a type B sixth pin 252 is led out from the housing. The type B sixth pin 252 is the cathode pin. Specifically, the type B fifth pin 251 and type B sixth pin 252 are led out from the left and right sides of the housing and extend vertically upwards to protrude from the top of the housing of the type B third component 25 before bending inwards towards the inside of the housing of the type B third component 25.

[0095] Furthermore, a second adhesive layer 253 of type B is provided between the bottom surface of the shell of type B second component 22 and the top surface of the shell of type B third component 25 to fix them together.

[0096] Furthermore, the second type B component 22 and the third type B component 25 are electrically connected through a third connecting frame 26 and a fourth connecting frame 27. The third connecting frame 26 and the fourth connecting frame 27 are C-shaped and fasten to the left and right sides of the third type B component 25.

[0097] Specifically, the top and bottom surfaces of the third connecting frame 26 are connected to the bottom of the first connecting frame 23 and the fifth pin 251 of type B through conductive material, respectively, and then extend downward to protrude from the bottom of the third sub-body 25 of type B, and then bend into the interior of the third sub-body 25 of type B; the top and bottom surfaces of the fourth connecting frame 27 are connected to the bottom of the second connecting frame 24 and the sixth pin 252 of type B through conductive material, respectively, and then extend downward to protrude from the bottom of the third sub-body 25 of type B, and then bend into the interior of the third sub-body 25 of type B.

[0098] Ten multilayer solid-state capacitors from Example 8 were tested using standard testing methods. The sample specifications were 100μF 25V, and the test results are shown in Table 8 below. In this example, the aluminum foil specification was 49VF, ensuring that the capacitance of the three capacitors connected in parallel did not exceed the upper limit of 120μF for the 100μF specification.

[0099]

[0100] Comparative Example 1

[0101] This comparative example provides a multilayer solid-state capacitor, comprising capacitor chips 3, a conductive frame, and a housing. The capacitor chips 3 and the conductive frame are disposed within the housing. The capacitor chips 3 are divided into an anode region 31 and a cathode region 33 by silicone strips 32. Further, four capacitor chips 3 are disposed on each side of the conductive frame. The anode regions of the capacitor chips 3 are connected to each other and to the connecting frame by resistance welding. The cathode regions of the capacitor chips 3 are connected to each other and to the conductive frame by silver paste. Specifically, a plurality of silver paste points 34 are provided between the cathode regions of the capacitor chips 3 and between the cathode regions of the capacitor chips 3 and the conductive frame. In this comparative example, the silver paste points 34 are arranged in a four-point configuration. After the conductive frame is connected to the anode and cathode regions of the capacitor chips 3, capacitor leads are led out from the left and right sides of the housing.

[0102] Ten multilayer solid capacitors from Comparative Example 1 were used for performance testing using standard testing methods. The sample specifications were 100μF 25V and the aluminum foil specifications were 38VF. The test results are shown in Table 9 below.

[0103]

[0104] Comparative Example 2

[0105] This comparative example provides a multilayer solid capacitor, which differs from Comparative Example 1 in that the silver paste dots 34 are arranged in a single-point manner, such as... Figure 7 As shown, the single-point type is a cathode region with only one silver paste point 34 in the center area.

[0106] Ten multilayer solid capacitors from Comparative Example 2 were used for performance testing using standard testing methods. The sample specifications were 100μF 25V and the aluminum foil specifications were 38VF. The test results are shown in Table 10 below.

[0107]

[0108] Comparative Example 3

[0109] This comparative example provides a multilayer solid-state capacitor, which differs from Comparative Example 1 in that six capacitor chips 3 are provided on both sides of the conductive frame. However, when the inventors of this application conducted performance tests using standard testing methods, they found that the products in this comparative example exhibited failure modes such as delamination, deformation, and overheating during the testing process, and the product performance was unqualified. The multilayer solid-state capacitor provided in this embodiment of the invention, by adopting a split parallel structure, optimizes the layout and connection method of the capacitor chips, reducing interlayer delamination and deformation problems caused by thermal and mechanical stress, thereby improving the structural stability and reliability of the product. At the same time, the split parallel structure can utilize space more efficiently, increasing the effective connection area of ​​the capacitor chips, thus significantly increasing the capacitance and meeting the needs of high-capacity applications.

[0110] It should be noted that the conductive connecting material used in the embodiments and comparative examples of the present invention is lead-free high-temperature solder paste containing 1% to 3% silver by mass; the first adhesive layer 123 of type A, the second adhesive layer 113 of type A, the first adhesive layer 223 of type B, and the second adhesive layer 253 of type B are one of epoxy adhesive, polyurethane adhesive, acrylic adhesive, or other conventional electronic and electrical adhesives.

[0111] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A high-capacity, low-ESR multilayer solid aluminum capacitor, characterized in that, It includes a parallel capacitor body, which includes several capacitor segments stacked and connected in parallel; each capacitor segment includes several capacitor chips (3), a conductive frame and a housing, the capacitor chips (3) and the conductive frame are disposed in the housing, and several stacked capacitor chips (3) are provided on both sides of the conductive frame, and the conductive frame leads out anode pins and cathode pins to both sides of the housing respectively, the anode pins of the several capacitor segments are conductively connected to each other, and the cathode pins of the several capacitor segments are conductively connected to each other.

2. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 1, characterized in that, The parallel capacitor body is a type A parallel capacitor body (1). The type A parallel capacitor body (1) includes a type A first component (11) and a type A second component (12). The type A first component (11) and the type A second component (12) are stacked and connected in parallel, and the parallel connection between the type A first component (11) and the type A second component (12) is a pin-to-pin contact parallel connection.

3. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 1, characterized in that, The parallel capacitor body is a type B parallel capacitor body (2). The type B parallel capacitor body (2) includes a type B first component (21) and a type B second component (22). The type B first component (21) and the type B second component (22) are stacked on top of each other and connected in parallel through a connecting frame.

4. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 3, characterized in that, The connecting frame includes a first connecting frame (23) and a second connecting frame (24) that are C-shaped and fastened to the left and right sides of the second B-type split (22).

5. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 1, characterized in that, The parallel capacitor body is a type A parallel capacitor body (1'), which includes a type A third component (13), a type A first component (11), and a type A second component (12) that are stacked and connected in parallel. The type A third component (13), type A first component (11), and type A second component (12) are connected in parallel with contact pins.

6. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 1, characterized in that, The parallel capacitor body is a type B parallel capacitor body (2'). The type B parallel capacitor body (2') includes a type B first component (21), a type B second component (22), and a type B third component (25) stacked vertically. The type B first component (21), type B second component (22), and type B third component (25) are connected in parallel through a connecting frame.

7. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 1, characterized in that, The capacitor chip (3) is provided with an anode region and a cathode region. A number of silver paste dots (34) are provided between the cathode regions of the capacitor chip (3) and between the cathode region of the capacitor chip (3) and the conductive frame.

8. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 7, characterized in that, The silver paste dots (34) are set as four-dot, six-dot, or nine-dot.

9. The high-capacity, low-ESR multilayer solid aluminum capacitor according to claim 1, characterized in that, An adhesive layer is also provided between each capacitor component.

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