Reaction chamber device and semiconductor equipment

Abstract

The utility model belongs to the technical field of semiconductor processing, and discloses a reaction chamber device and semiconductor equipment, a main chamber of the reaction chamber device is internally provided with a first reaction chamber and a second reaction chamber which are communicated with each other, an extension chamber is internally provided with a third reaction chamber, and the second reaction chamber is internally provided with a first carrying platform and a second carrying platform. The main cavity is provided with a first guide hole, a second guide hole and a center guide hole, the center guide hole is located between the first carrying table and the second carrying table, the first guide hole is located in the side, away from the second carrying table, of the first carrying table, and the second guide hole is located in the side, away from the first carrying table, of the second carrying table. The first guide hole, the second guide hole and the central guide hole are all communicated with the inflow end of the third reaction chamber, and the outflow end of the third reaction chamber is communicated with external vacuumizing equipment. The reaction chamber device provided by the utility model can keep the photoresist removing uniformity on the surface of the wafer and improve the processing quality of semiconductor equipment.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to reaction chamber devices and semiconductor equipment. Background Technology

[0002] Dry photoresist stripping is a process in semiconductor manufacturing that uses a plasma stripper to remove residual photoresist from the wafer surface through plasma oxidation or decomposition. This ensures that no residual photoresist remains on the wafer surface, thus avoiding any impact on subsequent integrated circuit chip manufacturing processes. The plasma stripper uses oxygen atoms to react with the photoresist in a vacuum plasma environment, generating waste products such as carbon monoxide, carbon dioxide, and water, which are then removed by the vacuum system. For plasma strippers with two stages within the reaction chamber, it is difficult to ensure that the vacuum pump draws waste at the two stages at a consistent flow rate. Inconsistent flow rates around the stages can affect the uniformity of photoresist removal on the wafer surface on both stages, leading to differences in wafer process parameters and ultimately affecting the stability of wafer processing quality. Utility Model Content

[0003] One objective of this invention is to provide a reaction chamber device that can solve the problem of inconsistent waste flow rates at the two stages of existing plasma descrambling machines, which affects the stability and consistency of wafer processing quality.

[0004] To achieve this objective, the present invention adopts the following technical solution:

[0005] A reaction chamber device is provided, comprising a main chamber and an extension chamber connected to each other. The main chamber has a first reaction chamber and a second reaction chamber that are interconnected. The extension chamber has a third reaction chamber. The second reaction chamber has a first stage and a second stage. The main chamber has a first guide hole, a second guide hole, and a central guide hole. The central guide hole is located between the first stage and the second stage. The first guide hole is located on the side of the first stage away from the second stage. The second guide hole is located on the side of the second stage away from the first stage. The first guide hole, the second guide hole, and the central guide hole are all connected to the inflow end of the third reaction chamber. The outflow end of the third reaction chamber is connected to an external vacuum pump.

[0006] In one embodiment, the distance between the side of the first stage away from the central guide hole and the sidewall of the second reaction chamber is S1, and the distance between the side of the second stage away from the central guide hole and the sidewall of the second reaction chamber is S2; wherein, when S1 > S2, the diameter of the first guide hole is smaller than the diameter of the second guide hole, and when S1 < S2, the diameter of the first guide hole is larger than the diameter of the second guide hole; or,

[0007] When the area of ​​the first platform is equal to the area of ​​the second platform, the diameter of the first guide hole is equal to the diameter of the second guide hole.

[0008] In one embodiment, the extension cavity includes a first extension tube, a second extension tube, and a central tube. One end of the central tube is connected to the central guide hole, one end of the first extension tube is connected to the first guide hole, one end of the second extension tube is connected to the second guide hole, and the other ends of the first extension tube, the second extension tube, and the central tube are interconnected.

[0009] In one embodiment, the reaction chamber device further includes a first regulating valve and a second regulating valve, the first regulating valve being disposed in the first extension tube and the second regulating valve being disposed in the second extension tube, the opening degree of the first regulating valve and the second regulating valve being adjustable respectively.

[0010] In one embodiment, the reaction chamber device further includes a first vacuum gauge and a first control valve, the first vacuum gauge being connected to the main chamber, and the first control valve being used to control the connection or disconnection between the first vacuum gauge and the main chamber; and / or,

[0011] The reaction chamber device further includes a first pressure switch and a second vacuum gauge, both connected to the main chamber. The main chamber is equipped with a gate valve for controlling the opening and closing of the second reaction chamber. The second vacuum gauge is used to detect the vacuum level of the main chamber. The first pressure switch is communicatively connected to the gate valve; and / or,

[0012] Along the gas flow direction, a pressure-controlled butterfly valve, a second control valve, and a second pressure switch are sequentially arranged between the outlet end of the third reaction chamber and the external vacuum equipment. The second pressure switch is communicatively connected to the pressure-controlled butterfly valve.

[0013] In one embodiment, the reaction chamber device further includes a piping assembly and a first pneumatic valve. The first pneumatic valve is disposed on the piping assembly. The piping assembly includes a first pipe and a second pipe that are connected to each other and located on both sides of the first pneumatic valve. The first pipe is used to connect to the main chamber. A second pneumatic valve is disposed on the first pipe. The second pipe is used to connect to an inert gas supply device. The diameter of the first pipe is larger than the diameter of the second pipe.

[0014] In one embodiment, the upper part of the main cavity includes two side-by-side sub-cavities to separate the first reaction chamber into two sub-cavities. Each of the two sub-cavities is provided with a first inflow hole, and the main cavity is provided with a second inflow hole that connects to the second reaction chamber. Both the first inflow hole and the second inflow hole are connected to the first pipe.

[0015] In one embodiment, the first pipeline includes three branch pipelines arranged in parallel, each of which is provided with a second pneumatic valve, and the three branch pipelines are respectively connected to two first inlet holes and two second inlet holes.

[0016] In one embodiment, the reaction chamber device further includes a flow meter disposed in the first conduit and located between the second pneumatic valve and the first pneumatic valve, the flow meter being communicatively connected to the first pneumatic valve; and / or,

[0017] The second pipeline is equipped with a manual regulating valve, which is used to control the connection or disconnection of the second pipeline; and / or,

[0018] A gas filter is installed on the second pipeline; and / or,

[0019] The second pipeline is equipped with a pressure sensor and a first pressure regulating valve. The pressure sensor is used to detect the gas supply pressure of the inert gas supply equipment. The pressure sensor is communicatively connected to the first pressure regulating valve, and the opening of the first pressure regulating valve is adjustable; and / or,

[0020] The second pipeline is provided with a third pneumatic valve and a fourth pneumatic valve connected in parallel, and the third pneumatic valve or the fourth pneumatic valve has a second pressure regulating valve connected in series.

[0021] Another objective of this invention is to provide a semiconductor device with a reaction chamber that can solve the problem of inconsistent waste flow rates at the two stages of an existing plasma stripper, which affects the stability and consistency of wafer processing quality, thereby improving the processing quality of the semiconductor device.

[0022] To achieve this objective, the present invention employs the following technical solution in another aspect:

[0023] Provide semiconductor devices, including reaction chamber devices as described above.

[0024] The beneficial effects of this utility model are:

[0025] The reaction chamber device provided by this utility model includes a main chamber and an extension chamber connected to each other. The main chamber contains a first reaction chamber and a second reaction chamber, and the extension chamber contains a third reaction chamber. The inflow end of the first reaction chamber is connected to a reaction gas supply device, and the outflow end of the first reaction chamber is connected to the second reaction chamber. The second reaction chamber contains a first stage and a second stage, each supporting a wafer. The main chamber has a first guide hole, a second guide hole, and a central guide hole. The central guide hole is located between the first and second stages. The first guide hole is located on the side of the first stage furthest from the second stage, and the second guide hole is located on the side of the second stage furthest from the first stage. The first guide hole, the second guide hole, and the central guide hole are all connected to the inflow end of the third reaction chamber, and the outflow end of the third reaction chamber is connected to an external vacuum device. During the process, the reaction gas supply device injects reaction gas through the first reaction chamber. Under the continuous suction of the external vacuum device, the reaction gas flows to the first and second stages and then to the third reaction chamber. Guided by the first guide hole, the central guide hole, and the second guide hole, the reactive gas can form a uniform flow on both sides of the first and second stages, which is conducive to pressure balance on both sides of the stages. This ensures that the flow rate of the reactive gas around the first and second stages is consistent and stable. Moreover, the third reaction chamber has a relatively stable negative pressure environment, which can guide the reactive gas flowing through the first guide hole, the central guide hole, and the second guide hole respectively. This helps to maintain the overall gas flow rate stability in the second reaction chamber, thereby ensuring that the uniformity of resist removal on the wafer surface on the first and second stages is consistent, avoiding differences in wafer process parameters, and improving the stability of wafer processing quality in the same batch.

[0026] The semiconductor equipment provided by this utility model includes the above-mentioned reaction chamber device, which can ensure that the uniformity of resist removal on the wafer surface on the first stage and the second stage is consistent, avoid differences in wafer process parameters, and improve the processing quality of semiconductor equipment. Attached Figure Description

[0027] Figure 1 This is a structural cross-sectional view of the reaction chamber device provided in this embodiment of the utility model;

[0028] Figure 2 This is a schematic diagram of the working principle of the external vacuuming device provided in this embodiment of the utility model;

[0029] Figure 3 This is a schematic diagram of the reaction chamber device provided in an embodiment of the present invention from one perspective;

[0030] Figure 4 This is a schematic diagram of the reaction chamber device provided in an embodiment of the present invention from another perspective;

[0031] Figure 5 This is a schematic diagram of the working principle of the inert gas supply device provided in this embodiment of the utility model;

[0032] Figure 6 This is a rear view of the structure of the reaction chamber device provided in this embodiment of the utility model.

[0033] In the picture:

[0034] 1. Main cavity; 10. Sub-cavity; 11. First reaction chamber; 111. Sub-cavity; 12. Second reaction chamber; 13. First guide hole; 14. Second guide hole; 15. Central guide hole; 16. First inlet hole; 17. Second inlet hole; 2. Extension cavity; 21. Third reaction chamber; 22. First extension tube; 23. Second extension tube; 24. Central tube; 31. First stage; 32. Second stage; 40. Second pressure switch; 41. First regulating valve; 42. Second regulating valve; 43. First pressure switch 44. Vacuum gauge; 45. First control valve; 46. First pressure switch; 47. Second vacuum gauge; 48. Door valve; 49. Pressure-controlled butterfly valve; 50. Second control valve; 61. Piping assembly; 51. First pipeline; 51. Branch pipeline; 52. Second pipeline; 60. Second pressure regulating valve; 61. First pneumatic valve; 62. Second pneumatic valve; 63. Flow meter; 64. Manual regulating valve; 65. Gas filter; 66. Pressure sensor; 67. First pressure regulating valve; 68. Third pneumatic valve; 69. Fourth pneumatic valve;

[0035] 100. External vacuum equipment; 101. Pump tube; 200. Inert gas supply equipment. Detailed Implementation

[0036] The technical solution of this utility model will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0037] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions. Moreover, "above," "on top of," and "over" the first feature in relation to the second feature includes the first feature directly above and diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "under," and "below" the first feature in relation to the second feature includes the first feature directly below and diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0038] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0039] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0040] like Figures 1 to 6As shown, this embodiment first provides a reaction chamber device, which includes a main chamber 1 and an extension chamber 2 connected to each other. The main chamber 1 has a first reaction chamber 11 and a second reaction chamber 12 that are connected to each other, and the extension chamber 2 has a third reaction chamber 21. The inflow end of the first reaction chamber 11 is used to connect to a reaction gas supply device (not shown in the figure), and the outflow end of the first reaction chamber 11 is connected to the second reaction chamber 12. The second reaction chamber 12 is provided with a first stage 31 and a second stage 32, and wafers are respectively supported on the first stage 31 and the second stage 32. The main cavity 1 is provided with a first guide hole 13, a second guide hole 14, and a central guide hole 15. The central guide hole 15 is located between the first stage 31 and the second stage 32. The first guide hole 13 is located on the side of the first stage 31 away from the second stage 32, and the second guide hole 14 is located on the side of the second stage 32 away from the first stage 31. The first guide hole 13, the second guide hole 14, and the central guide hole 15 are all connected to the inflow end of the third reaction chamber 21, and the outflow end of the third reaction chamber 21 is connected to the external vacuum pumping device 100. During the process, the reaction gas supply device injects reaction gas through the first reaction chamber 11. Under the continuous suction of the external vacuum pumping device 100, the reaction gas flows to the first stage 31 and the second stage 32, and then to the third reaction chamber 21. Guided by the first guide hole 13, the central guide hole 15, and the second guide hole 14, the reactive gas can form a uniform flow on both sides of the first stage 31 and the second stage 32, which is conducive to the pressure balance on both sides of the stage. This makes the flow rate of the reactive gas around the first stage 31 and the second stage 32 consistent and stable. Moreover, the third reaction chamber 21 has a relatively stable negative pressure environment, which can guide the reactive gas flowing through the first guide hole 13, the central guide hole 15, and the second guide hole 14 respectively. This helps to maintain the overall gas flow rate stability in the second reaction chamber 12, thereby ensuring that the uniformity of resist removal on the wafer surface on the first stage 31 and the second stage 32 is consistent, avoiding differences in wafer process parameters, and improving the stability of wafer processing quality in the same batch.

[0041] In one embodiment, the distance between the side of the first stage 31 away from the central guide hole 15 and the cavity sidewall of the second reaction chamber 12 is S1, and the distance between the side of the second stage 32 away from the central guide hole 15 and the cavity sidewall of the second reaction chamber 12 is S2; wherein, when S1>S2, the aperture of the first guide hole 13 is smaller than the aperture of the second guide hole 14, and when S1<S2, the aperture of the first guide hole 13 is larger than the aperture of the second guide hole 14, that is, the aperture of the guide hole and the spatial dimension of the corresponding stage edge are negatively correlated. When the dimensions of the first stage 31 and the second stage 32 are different, the values ​​of S1 and S2 will be different. When the distance between the edge of the stage and the sidewall of the second reaction chamber 12 is large, the airflow is more fluid. Therefore, it is necessary to adaptively reduce the aperture of the corresponding guide hole to maintain the uniformity of the flow velocity in the entire second reaction chamber 12. Similarly, when the distance between the edge of the stage and the sidewall of the second reaction chamber 12 is small, the airflow is slightly less fluid. Therefore, it is necessary to adaptively increase the aperture of the corresponding guide hole to maintain the uniformity of the flow velocity in the entire second reaction chamber 12.

[0042] In another embodiment, the areas of the first platform 31 and the second platform 32 are equal, and the obstruction effect of the first platform 31 and the second platform 32 on the airflow is the same. In this way, even if the distance between the side of the first platform 31 away from the central guide hole 15 and the cavity sidewall of the second reaction chamber 12 is different from the distance between the side of the second platform 32 away from the central guide hole 15 and the cavity sidewall of the second reaction chamber 12, the uniformity of the flow velocity in the entire second reaction chamber 12 can be guaranteed by the aperture of the first guide hole 13 being equal to the aperture of the second guide hole 14.

[0043] The extension cavity 2 includes a first extension tube 22, a second extension tube 23, and a central tube 24. One end of the central tube 24 is connected to a central guide hole 15, one end of the first extension tube 22 is connected to a first guide hole 13, one end of the second extension tube 23 is connected to a second guide hole 14, and the other ends of the first extension tube 22, the second extension tube 23, and the central tube 24 are interconnected. The first extension tube 22 and the second extension tube 23 form a U-shaped tube, with the central tube 24 located in the middle of the U-shaped tube. This symmetrical structure helps maintain a consistent flow velocity at the first guide hole 13, the second guide hole 14, and the central guide hole 15. Figure 1 As shown in the figure, the arrows indicate the direction of gas flow. The extension cavity 2 is formed by three parts through the first extension tube 22, the second extension tube 23, and the central tube 24, which reduces the mutual influence of the airflow from the first guide hole 13, the central guide hole 15, and the second guide hole 14, thus reducing the turbulence caused by the interaction of the airflow.

[0044] The reaction chamber device also includes a first regulating valve 41 and a second regulating valve 42. The first regulating valve 41 is located in the first extension tube 22, and the second regulating valve 42 is located in the second extension tube 23. The opening degrees of the first regulating valve 41 and the second regulating valve 42 are adjustable. Specifically, the first regulating valve 41 and the second regulating valve 42 achieve pressure control through their respective servo motors. Both the first regulating valve 41 and the second regulating valve 42 are equipped with valve plates that control the valve opening. The servo motors control the position of the valve plates. By adjusting the opening degrees of the first regulating valve 41 and the second regulating valve 42, the consistency of the flow velocity in the first extension tube 22 and the second extension tube 23 is further improved. Since the central tube 24 is a straight tube, it can be directly connected to the external vacuum equipment 100, and its opening degree does not need to be controlled.

[0045] The reaction chamber device also includes a first vacuum gauge 43 and a first control valve 44. The first vacuum gauge 43 is connected to the main chamber 1, and the first control valve 44 is used to control the connection or disconnection between the first vacuum gauge 43 and the main chamber 1. The process gases used in the resist removal or etching processes are corrosive, and most of the impurity gases generated during the process are also sticky and corrosive. Moreover, for the first reaction chamber 11 and the second reaction chamber 12 with high vacuum levels, the first vacuum gauge 43 is easily damaged during the vacuum level detection process. Therefore, the first control valve 44 can provide protection for the first vacuum gauge 43. In the initial state of the reaction chamber device, the first control valve 44 is first closed to disconnect the first vacuum gauge 43 from the main chamber 1. After the external vacuum equipment 100 has worked for a predetermined time, the main chamber 1 reaches the preset pressure. At this time, the first control valve 44 is opened again, and the first vacuum gauge 43 starts to work. The value measured by the first vacuum gauge 43 is used to determine whether the main chamber 1 has reached the vacuum state required by the process. In one embodiment, the first vacuum gauge 43 is a thin-film gauge.

[0046] The reaction chamber device also includes a first pressure switch 45 and a second vacuum gauge 46, both connected to the main chamber 1. The main chamber 1 is equipped with a gate valve 47, which controls the opening and closing of the second reaction chamber 12. The second vacuum gauge 46 is used to detect the vacuum level of the main chamber 1. The first pressure switch 45 is communicatively connected to the gate valve 47. The gate valve 47 isolates the main chamber 1 from the external environment. By opening and closing the gate valve 47, a robotic arm (not shown) can perform wafer handling. In one embodiment, as... Figure 3 As shown, the reaction chamber device is equipped with two valves 47, corresponding to the first stage 31 and the second stage 32, respectively. In one embodiment, the second vacuum gauge 46 is a thin-film gauge, which is an atmospheric gauge, and its internal valve plate is more wear-resistant and corrosion-resistant. When the second vacuum gauge 46 detects that the pressure inside the main chamber 1 is the same as the external environment, the first pressure switch 45 sends a feedback signal to the valves 47, and the valves 47 open.

[0047] Along the gas flow direction, a pressure-controlled butterfly valve 48, a second control valve 49, and a second pressure switch 40 are sequentially installed between the outlet end of the third reaction chamber 21 and the external vacuum equipment 100. The second pressure switch 40 is communicatively connected to the pressure-controlled butterfly valve 48. Figure 2 As shown in the diagram, the arrows indicate the direction of gas flow. Once the dry pump of the external vacuum equipment 100 is turned on, it will not be turned off and will continuously evacuate the main chamber 1. The vacuum level in the main chamber 1 is controlled by the pressure-controlled butterfly valve 48 to ensure that the pressure in the main chamber 1 is always maintained at the pressure value required by the process. The second control valve 49 is an angle valve used to control the connection between the main chamber 1 and the external vacuum equipment 100. The second pressure switch 40 is used to detect the vacuum level in the PUMP tube 101 of the external vacuum equipment 100 and feeds back a signal to the pressure-controlled butterfly valve 48.

[0048] The workflow of the reaction chamber device in this embodiment during the process is as follows: First, the gate valve 47 is opened, and a robotic arm is used to transfer two wafers from the atmospheric transport platform (not shown in the figure) to the main chamber 1, and place them on the first stage 31 and the second stage 32 respectively; the gate valve 47 is closed, the first control valve 44 is closed, the first pressure switch 45 and the second vacuum gauge 46 are closed, the pressure control butterfly valve 48 is opened, the second control valve 49 is opened, and the external vacuum pump 100 is turned on to start pre-evacuation from the PUMP tube 101. When the pumping speed reaches the pressure range set by the second pressure switch 40, the pressure control butterfly valve 48 starts to work, and the pressure in the main chamber 1 is precisely controlled by the pressure control butterfly valve 48; after the dry pump has been working for a certain period of time (this time is the pre-evacuation time estimated by the dry pump working parameters), the first control valve 44 is opened. At this time, the first vacuum gauge 43 starts to work, and the value measured by the first vacuum gauge 43 is used to determine whether the vacuum state required by the process has been reached in the main chamber 1. At this time, the outside of valve 47 is the atmospheric environment transmission platform, and the inside of valve 47 is the first reaction chamber 11, the second reaction chamber 12 and the third reaction chamber 21 under vacuum. At this time, the wafer is processed, and at the same time, the external vacuum equipment 100 pumps out the waste generated in the process.

[0049] After the processing, the vacuum environment inside the main chamber 1 needs to be broken to facilitate the removal of the wafer by the robotic arm. The speed at which the vacuum is broken has a significant impact on the processing efficiency of the semiconductor equipment. The reaction chamber device also includes a piping assembly 5 and a first pneumatic valve 61. The first pneumatic valve 61 is disposed on the piping assembly 5. The piping assembly 5 includes a first pipe 51 and a second pipe 52 connected to each other and located on both sides of the first pneumatic valve 61. The first pipe 51 is used to connect to the main chamber 1, and the second pneumatic valve 62 is disposed on the first pipe 51. The second pipe 52 is used to connect to an inert gas supply device 200. The diameter of the first pipe 51 is larger than the diameter of the second pipe 52. For example, in one embodiment, the first pipe 51 has a 1 / 2 diameter and the second pipe 52 has a 1 / 4 diameter. When the first pneumatic valve 61 is opened, the second pneumatic valve 62 is opened, and the inert gas supply device 200 injects inert gas into the main chamber 1 through the piping assembly 5, breaking the vacuum state inside the main chamber 1. The inert gas includes, but is not limited to, nitrogen. Before the vacuum breaking operation, inert gas can be stored in advance through the first pipe 51 with a larger diameter. When the second pneumatic valve 62 is closed, the pipe assembly 5 remains stationary, and the first pipe 51 is equivalent to a gas storage tank. When the first pneumatic valve 61 is open and the second pneumatic valve 62 is open, and the inert gas supply device 200 is working, the inert gas in the first pipe 51 can flow into the main cavity 1 quickly, thereby increasing the speed of breaking the vacuum environment in the main cavity 1.

[0050] The upper part of the main chamber 1 includes two parallel sub-chambers 10 to separate the first reaction chamber 11, forming two sub-chambers 111. The two sub-chambers 111 are respectively located above the first stage 31 and the second stage 32. Each of the two sub-chambers 10 is provided with a first inlet hole 16, and the main chamber 1 is provided with a second inlet hole 17 that connects to the second reaction chamber 12. Both the first inlet hole 16 and the second inlet hole 17 are connected to the first pipe 51, thereby increasing the nitrogen injection rate through a multi-point injection method.

[0051] The first pipeline 51 includes three branch pipelines 511 arranged in parallel. Each branch pipeline 511 is equipped with a second pneumatic valve 62. The three branch pipelines 511 are respectively connected to two first inlet holes 16 and a second inlet hole 17. The second pneumatic valve 62 is used to control the opening and closing of the branch pipelines 511. When vacuum breaking is not required, the second pneumatic valve 62 is closed first, and the first pneumatic valve 61 is opened. At this time, inert gas can be injected into the first pipeline 51. Each branch pipeline 511 is equipped with a second pneumatic valve 62. During vacuum breaking, any one branch pipeline 511 can be opened or closed individually to meet different operating conditions.

[0052] The reaction chamber device also includes a flow meter 63, which is installed in the first pipe 51 and located between the second pneumatic valve 62 and the first pneumatic valve 61. The flow meter 63 is communicatively connected to the first pneumatic valve 61. Through the cooperation of the flow meter 63 and the first pneumatic valve 61, the flow rate of inert gas flowing into the first pipe 51 is detected.

[0053] The second pipeline 52 is equipped with a manual regulating valve 64, which is used to control the connection or disconnection of the second pipeline 52. It is the main switch for controlling whether the second pipeline 52 and the inert gas supply equipment 200 are connected.

[0054] A gas filter 65 is installed on the second pipe 52, and two gas filters 65 can be installed. Along the gas flow direction, the pre-stage gas filter 65 primarily filters the inert gas within the second pipe 52, preventing contaminants with noticeable particulate matter from entering the second pipe 52, achieving a high-flow-rate, coarse filtration effect. The post-stage gas filter 65 primarily performs fine filtration of the inert gas, preventing impurities not filtered out by the coarse filtration from entering the main chamber 1 and causing ion contamination. Simultaneously, the post-stage gas filter 65 also indirectly prevents backflow of process gas and backflow of impurities generated during the production process into the inert gas supply equipment 200. Figure 5 As shown in the figure, the arrows indicate the flow direction of the inert gas.

[0055] A pressure sensor 66 and a first pressure regulating valve 67 are installed on the second pipe 52. The pressure sensor 66 is used to detect the gas supply pressure of the inert gas supply device 200. The pressure sensor 66 is communicatively connected to the first pressure regulating valve 67, and the opening of the first pressure regulating valve 67 is adjustable. The first pressure regulating valve 67 is used to regulate the inlet pressure of the second pipe 52. If the flow rate of the second pipe 52 is too low, the pressure is adjusted by the first pressure regulating valve 67 while keeping the pipe diameter unchanged, thereby increasing the flow velocity of the inert gas in the second pipe 52, accelerating its entry into the main cavity 1, and increasing the speed of vacuum breaking.

[0056] A third pneumatic valve 68 and a fourth pneumatic valve 69 are connected in parallel on the second pipe 52. Either the third or fourth pneumatic valve 68 has a second pressure regulating valve 60 connected in series. Exemplarily, in one embodiment, the third pneumatic valve 68 is located on the main pipe of the second pipe 52, and the fourth pneumatic valve 69 is located on a branch pipe of the second pipe 52, with the branch pipe and main pipe connected in parallel. The second pressure regulating valve 60 controls the injection pressure in the branch pipe. Through the cooperation of the third and fourth pneumatic valves 68 and 69, the flow rate and velocity of the inert gas injected into the second pipe 52 are better controlled.

[0057] In one embodiment, before the processing, the main chamber 1 and the extension chamber 2 can be purged by an inert gas supply device 200. At this time, all valves on the pipeline assembly 5 are opened, and the inert gas supply device 200 quickly injects inert gas into the main chamber 1 and the extension chamber 2 to purge the first reaction chamber 11, the second reaction chamber 12 and the third reaction chamber 21, thereby improving the cleanliness. The inert gas is then quickly removed by an external vacuum device 100.

[0058] The workflow of the reaction chamber device in this embodiment is as follows: After the inert gas supply device 200 purges the main chamber 1 and the extension chamber 2, the wafer is placed into the first stage 31 and the second stage 32. The external vacuum device 100 starts working and evacuates the vacuum. Then, the reaction gas supply device introduces process gas into the main chamber 1. At this time, the three second pneumatic valves 62 are all closed, and the first pneumatic valve 61 is open. The inert gas supply device 200 starts to fill the first pipe 51 with inert gas. After a certain flow rate is filled, the gas flow data is detected by the flow meter 63, and a feedback signal is sent to the first pneumatic valve 61 to close the first pneumatic valve 61. After the process is completed, it is necessary to quickly fill the main chamber 1 with inert gas. At this time, the three second pneumatic valves 62 are opened, and the first pneumatic valve 61 is opened, so that the inert gas in the first pipe 51 and the inert gas provided by the inert gas supply device 200 act simultaneously, thereby shortening the time for injecting inert gas and achieving the effect of quickly breaking the vacuum in the main chamber 1, thus improving production efficiency.

[0059] This utility model embodiment further provides a semiconductor device, which includes a reaction chamber device as described in any of the above embodiments. During the process, a reaction gas supply device injects reaction gas through a first reaction chamber 11. Under the continuous suction of an external vacuum device 100, the plasma is drawn towards the first stage 31 and the second stage 32. The third reaction chamber 21, on the one hand, can form a relatively stable negative pressure environment, which is beneficial for maintaining a stable gas flow rate in the second reaction chamber 12. On the other hand, through the first guide hole 13, the second guide hole 14, and the central guide hole 15, a relatively balanced pressure value is formed on both sides of the first stage 31 and the second stage 32, which is beneficial for ensuring that the flow rate around the first stage 31 and the second stage 32 is consistent and stable. This ensures that the uniformity of resist removal on the wafer surface on the first stage 31 and the second stage 32 is consistent, avoids differences in wafer process parameters, and improves the processing quality of the semiconductor device.

[0060] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. A reaction chamber device, characterized in that, The device includes a main cavity (1) and an extension cavity (2) that are interconnected. The main cavity (1) has a first reaction chamber (11) and a second reaction chamber (12) that are interconnected. The extension cavity (2) has a third reaction chamber (21). The second reaction chamber (12) is provided with a first stage (31) and a second stage (32). The main cavity (1) is provided with a first guide hole (13), a second guide hole (14) and a central guide hole (15). The central guide hole (15) is located on the first stage. Between (31) and the second stage (32), the first guide hole (13) is located on the side of the first stage (31) away from the second stage (32), and the second guide hole (14) is located on the side of the second stage (32) away from the first stage (31). The first guide hole (13), the second guide hole (14) and the central guide hole (15) are all connected to the inflow end of the third reaction chamber (21), and the outflow end of the third reaction chamber (21) is connected to the external vacuum device (100).

2. The reaction chamber device according to claim 1, characterized in that, The distance between the side of the first stage (31) away from the central guide hole (15) and the cavity sidewall of the second reaction chamber (12) is S1, and the distance between the side of the second stage (32) away from the central guide hole (15) and the cavity sidewall of the second reaction chamber (12) is S2; when S1 > S2, the diameter of the first guide hole (13) is smaller than the diameter of the second guide hole (14); when S1 < S2, the diameter of the first guide hole (13) is larger than the diameter of the second guide hole (14); or, When the area of ​​the first stage (31) and the area of ​​the second stage (32) are equal, the diameter of the first guide hole (13) is equal to the diameter of the second guide hole (14).

3. The reaction chamber device according to claim 1, characterized in that, The extension cavity (2) includes a first extension tube (22), a second extension tube (23), and a central tube (24). One end of the central tube (24) is connected to the central guide hole (15), one end of the first extension tube (22) is connected to the first guide hole (13), one end of the second extension tube (23) is connected to the second guide hole (14), and the other ends of the first extension tube (22), the second extension tube (23), and the central tube (24) are interconnected.

4. The reaction chamber device according to claim 3, characterized in that, The reaction chamber device further includes a first regulating valve (41) and a second regulating valve (42). The first regulating valve (41) is disposed on the first extension tube (22), and the second regulating valve (42) is disposed on the second extension tube (23). The opening degree of the first regulating valve (41) and the second regulating valve (42) is adjustable.

5. The reaction chamber device according to claim 1, characterized in that, The reaction chamber device further includes a first vacuum gauge (43) and a first control valve (44). The first vacuum gauge (43) is connected to the main chamber (1), and the first control valve (44) is used to control the connection or disconnection between the first vacuum gauge (43) and the main chamber (1); and / or, The reaction chamber device further includes a first pressure switch (45) and a second vacuum gauge (46) both connected to the main chamber (1). The main chamber (1) is provided with a gate valve (47), which is used to control the opening and closing of the second reaction chamber (12). The second vacuum gauge (46) is used to detect the vacuum level of the main chamber (1). The first pressure switch (45) is communicatively connected to the gate valve (47); and / or, Along the gas flow direction, a pressure-controlled butterfly valve (48), a second control valve (49), and a second pressure switch (40) are sequentially arranged between the outlet end of the third reaction chamber (21) and the external vacuum device (100), and the second pressure switch (40) is communicatively connected to the pressure-controlled butterfly valve (48).

6. The reaction chamber device according to claim 1, characterized in that, The reaction chamber device further includes a pipe assembly (5) and a first pneumatic valve (61). The first pneumatic valve (61) is disposed on the pipe assembly (5). The pipe assembly (5) includes a first pipe (51) and a second pipe (52) that are connected to each other and located on both sides of the first pneumatic valve (61). The first pipe (51) is used to connect to the main chamber (1). The second pneumatic valve (62) is disposed on the first pipe (51). The second pipe (52) is used to connect to an inert gas supply device (200). The diameter of the first pipe (51) is larger than the diameter of the second pipe (52).

7. The reaction chamber device according to claim 6, characterized in that, The upper part of the main cavity (1) includes two parallel sub-cavities (10) to separate the first reaction chamber (11) and form two sub-cavities (111). Each of the two sub-cavities (10) is provided with a first inflow hole (16). The main cavity (1) is provided with a second inflow hole (17) that connects to the second reaction chamber (12). Both the first inflow hole (16) and the second inflow hole (17) are connected to the first pipe (51).

8. The reaction chamber device according to claim 7, characterized in that, The first pipe (51) includes three branch pipes (511) arranged in parallel. Each branch pipe (511) is provided with a second pneumatic valve (62). The three branch pipes (511) are respectively connected to two first inlet holes (16) and second inlet holes (17).

9. The reaction chamber device according to claim 6, characterized in that, The reaction chamber device further includes a flow meter (63), which is disposed in the first pipe (51) and located between the second pneumatic valve (62) and the first pneumatic valve (61). The flow meter (63) is communicatively connected to the first pneumatic valve (61); and / or, A manual regulating valve (64) is provided on the second pipe (52), the manual regulating valve (64) being used to control the connection or disconnection of the second pipe (52); and / or, A gas filter (65) is provided on the second pipe (52); and / or, A pressure sensor (66) and a first pressure regulating valve (67) are provided on the second pipeline (52). The pressure sensor (66) is used to detect the gas supply pressure of the inert gas supply device (200). The pressure sensor (66) is communicatively connected to the first pressure regulating valve (67), and the opening degree of the first pressure regulating valve (67) is adjustable; and / or, The second pipe (52) is provided with a third pneumatic valve (68) and a fourth pneumatic valve (69) connected in parallel, wherein the third pneumatic valve (68) or the fourth pneumatic valve (69) has a second pressure regulating valve (60) connected in series.

10. A semiconductor device, characterized in that, Includes the reaction chamber device as described in any one of claims 1-9.

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