Semiconductor equipment reaction cavity structure

Abstract

The utility model discloses a reaction cavity structure of semiconductor equipment. The reaction cavity structure comprises a lower shell composed of a heat preservation inner layer I and a heat preservation outer layer I, an upper shell composed of a heat preservation inner layer II and a heat preservation outer layer II, a reaction cavity, a base used for bearing the lower shell, a lifting driving structure driving the upper shell to move vertically and a frame body used for bearing the lifting driving structure. And the connecting piece is detachably arranged between the lifting driving structure and the upper shell. The connecting piece comprises a protruding part abutting against the top of the heat preservation inner layer II, a connecting base arranged between the protruding part and the heat preservation outer layer II, and an air guiding part welded to the center of the connecting base. The thermal insulation inner layer II and the thermal insulation outer layer II can move together without being directly stressed, so that the thermal insulation layer is prevented from being damaged when the thermal insulation inner layer II and the thermal insulation outer layer II are directly stressed, the loss of the reaction cavity is reduced, meanwhile, the connecting piece can be detached and replaced, and the maintenance cost of the reaction cavity is further reduced.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor reaction chamber technology, and in particular to the structure of reaction chambers in semiconductor devices. Background Technology

[0002] Thermal processing equipment, such as semiconductor processing equipment, is equipped with a reaction chamber. Semiconductor substrates or wafers are placed inside the reaction chamber for processing, and the chamber is typically protected by an inert gas environment during the reaction. A heating device is also required to raise the temperature inside the reaction chamber to the reaction temperature. Existing technologies often use a vertically downward movement of the base to remove the substrate before or after the reaction, moving the base vertically downwards to remove the entire substrate. However, this structure results in a relatively high overall equipment height, a complex lifting drive mechanism, and the outer casing being directly subjected to the lifting force, leading to wear and tear on the reaction chamber. Utility Model Content

[0003] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a semiconductor device reaction chamber structure to reduce the loss of the reaction chamber during the opening and closing process and reduce the maintenance cost of the reaction chamber.

[0004] A semiconductor device reaction chamber structure includes a lower housing, an upper housing, and a reaction chamber; the lower housing is composed of an inner heat-insulating layer I and an outer heat-insulating layer I, and the upper housing is composed of an inner heat-insulating layer II and an outer heat-insulating layer II;

[0005] The reaction chamber structure also includes:

[0006] A lifting drive structure that drives the upper housing to move vertically; and

[0007] A detachable connector is installed between the lifting drive structure and the upper housing, which includes a protrusion that abuts against the top of the inner insulation layer II, a connecting seat disposed between the protrusion and the outer insulation layer II, and an air guide welded to the center of the connecting seat.

[0008] As a further improvement to the above solution, the inner insulation layer I, outer insulation layer I, inner insulation layer II, and outer insulation layer II are all made of graphite, and the graphite density of the inner insulation layer I is higher than that of the outer insulation layer I, and the graphite density of the inner insulation layer II is higher than that of the outer insulation layer II.

[0009] As a further improvement to the above scheme, the reaction chamber is formed between the inner insulation layer I and the inner insulation layer II, and the reaction chamber is used to place the semiconductor wafer support structure.

[0010] As a further improvement to the above solution, the reaction chamber structure also includes a base for supporting the lower housing and a frame for supporting the lifting drive structure.

[0011] As a further improvement to the above solution, the connecting seat has a hollow cylindrical structure, and the outer surface of the connecting seat is threaded and installed at the center of the top of the outer insulation layer II, and the protrusion is fixedly installed inside the connecting seat.

[0012] As a further improvement to the above solution, the air guide is vertically threaded through and disposed at the center of the top of the outer insulation layer II, and the upper end of the air guide is threaded onto the output end of the lifting drive structure.

[0013] As a further improvement to the above solution, an air intake groove is provided between the protrusion and the air guide, and the air inlet of the air intake groove is connected to the reaction chamber.

[0014] Compared with the prior art, the beneficial effects of this utility model are: when the reaction chamber is opened, the inner insulation layer II and the outer insulation layer II can move together without being directly subjected to force, which prevents damage to the insulation layer when directly subjected to force, reduces the wear and tear of the reaction chamber, and the connecting parts can be disassembled and replaced, further reducing the maintenance cost of the reaction chamber. Attached Figure Description

[0015] Figure 1 The diagram shown is a structural schematic of the semiconductor device reaction chamber structure provided by this utility model.

[0016] Figure 2 As shown Figure 1 A schematic diagram of the reaction chamber in the open state, with the arrows indicating the direction of movement of housing II.

[0017] Figure 3 As shown Figure 2 Enlarged view of point A in the middle.

[0018] Explanation of main component symbols

[0019] 1. Inner insulation layer I; 2. Outer insulation layer I; 3. Inner insulation layer II; 4. Outer insulation layer II; 5. Reaction chamber; 6. Lifting drive structure; 7. Air duct; 8. Connecting seat; 9. Protrusion; 10. Air guide section.

[0020] The above description of the main component symbols, together with the accompanying drawings and specific embodiments, provides a further detailed explanation of this utility model. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this utility model clearer, the following detailed description is provided in conjunction with embodiments. Additional aspects and advantages of this utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model. It should be understood that the following description is merely illustrative and not intended to limit the utility model.

[0022] The specific embodiments of this utility model are described in detail below.

[0023] Please see Figure 1-3 This embodiment provides a semiconductor device reaction chamber structure, which includes a lower shell composed of an inner heat-insulating layer I1 and an outer heat-insulating layer I2, an upper shell composed of an inner heat-insulating layer II3 and an outer heat-insulating layer II4, a reaction chamber 5, a base for supporting the lower shell, a lifting drive structure 6 for driving the upper shell to move vertically, a frame for supporting the lifting drive structure 6, and a connector detachably installed between the lifting drive structure 6 and the upper shell.

[0024] The inner insulating layer I1, outer insulating layer I2, inner insulating layer II3, and outer insulating layer II4 are all made of graphite, with the graphite density of inner insulating layer I1 being higher than that of outer insulating layer I2, and the graphite density of inner insulating layer II3 being higher than that of outer insulating layer II4. The reaction chamber 5 is formed between the inner insulating layer I1 and inner insulating layer II3, and is used to house the semiconductor wafer support structure. In this embodiment, the reaction chamber consists of a lower shell and an upper shell, both of which employ a double-layer design for better insulation.

[0025] In this embodiment, the lower housing is fixed on the base, and the lifting drive structure 6 is installed using the frame. The lifting drive structure 6 consists of a linear motor and a push rod, which controls the upper housing to move vertically, thereby closing the lower and upper housings for semiconductor processing, or opening the lower and upper housings for the placement and removal of semiconductor substrates.

[0026] The connector includes a protrusion 9 that abuts against the top of the inner insulation layer II3, a connecting seat 8 disposed between the protrusion 9 and the outer insulation layer II4, and an air guide 10 welded to the center of the connecting seat 8. The connecting seat 8 has a hollow cylindrical structure, and the outer surface of the connecting seat 8 is threaded and installed at the center of the top of the outer insulation layer II4. The protrusion 9 is fixedly installed inside the connecting seat 8.

[0027] The air guide section 10 is vertically threaded through and positioned at the center of the top of the outer insulation layer II4, and its upper end is threaded onto the output end of the lifting drive structure 6. An air intake groove 7 is formed between the protrusion 9 and the air guide section 10, and the air inlet of the air intake groove 7 is connected to the reaction chamber 5. In this embodiment, after the reaction is completed, the gas in the reaction chamber 5 is directionally discharged along the air intake groove 7.

[0028] In this embodiment, a connector is used to connect the upper housing and the lifting drive structure 6. When the lifting drive structure 6 applies a vertical pulling force to the upper housing through its output end, the force is first applied to the air guide 10, then to the outer insulation layer II4 via the connecting seat 8, and finally to the inner insulation layer II3 via the protrusion 9, thereby driving the upper housing to move. During this process, the presence of the connector prevents the inner insulation layer II3 and the outer insulation layer II4 from being directly subjected to force, allowing them to move together. This prevents damage to the insulation layer caused by direct force, reduces the wear and tear on the reaction chamber, and the connector can also be disassembled and replaced, further reducing the maintenance cost of the reaction chamber.

[0029] In summary, the reaction chamber structure of this embodiment has the following advantages: when the reaction chamber is opened, the inner insulation layer II3 and the outer insulation layer II4 can move together without being directly subjected to force, which prevents damage to the insulation layer when directly subjected to force, reduces the wear and tear of the reaction chamber, and the connecting parts can be disassembled and replaced, further reducing the maintenance cost of the reaction chamber.

[0030] The preferred embodiments of this utility model disclosed above are merely illustrative of the present utility model. These preferred embodiments do not exhaustively describe all details, nor do they limit the utility model to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of this utility model, thereby enabling those skilled in the art to better understand and utilize it. This utility model is limited only by the claims and their full scope and equivalents.

Claims

1. The structure of the reaction chamber of a semiconductor device, including a lower housing, an upper housing and a reaction chamber (5); Its features are, The lower shell is composed of an inner insulating layer I (1) and an outer insulating layer I (2), and the upper shell is composed of an inner insulating layer II (3) and an outer insulating layer II (4); The reaction chamber structure also includes: The lifting drive structure (6) drives the upper housing to move vertically; and A detachable connector is installed between the lifting drive structure (6) and the upper housing, which includes a protrusion (9) that abuts against the top of the inner insulation layer II (3), a connector (8) disposed between the protrusion (9) and the outer insulation layer II (4), and an air guide (10) welded to the center of the connector (8).

2. The semiconductor device reaction chamber structure according to claim 1, characterized in that, The inner insulation layer I (1), outer insulation layer I (2), inner insulation layer II (3) and outer insulation layer II (4) are all made of graphite, and the graphite density of the inner insulation layer I (1) is higher than that of the outer insulation layer I (2), and the graphite density of the inner insulation layer II (3) is higher than that of the outer insulation layer II (4).

3. The semiconductor device reaction chamber structure according to claim 2, characterized in that, The reaction chamber (5) is formed between the inner insulation layer I (1) and the inner insulation layer II (3), and the reaction chamber (5) is used to place the semiconductor wafer carrier structure.

4. The semiconductor device reaction chamber structure according to claim 1, characterized in that, The reaction chamber structure also includes a base for supporting the lower housing and a frame for supporting the lifting drive structure (6).

5. The semiconductor device reaction chamber structure according to claim 1, characterized in that, The connecting seat (8) has a hollow cylindrical structure, and the outer surface of the connecting seat (8) is threaded and installed at the top center of the outer insulation layer II (4). The protrusion (9) is fixedly installed inside the connecting seat (8).

6. The semiconductor device reaction chamber structure according to claim 5, characterized in that, The air guide (10) is vertically threaded through and installed at the top center of the outer insulation layer II (4), and the upper end of the air guide (10) is threaded onto the output end of the lifting drive structure (6).

7. The semiconductor device reaction chamber structure according to claim 6, characterized in that, An air intake groove (7) is provided between the protrusion (9) and the air guide (10), and the air inlet of the air intake groove (7) is connected to the reaction chamber (5).

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