Integrated MOS (Metal Oxide Semiconductor) tube synchronous rectifying device

Abstract

The utility model relates to the technical field of electroplating power supplies, and discloses an integrated MOS tube synchronous rectifying device, which comprises a source electrode connecting piece, a control panel, two oppositely arranged MOS tube groups and two drain electrode connecting plates, and the two drain electrode connecting plates are oppositely and fixedly arranged on the side wall of a heat dissipation base; the source electrode connecting piece is located on the upper side of the heat dissipation base, and the control panel is located between the heat dissipation base and the source electrode connecting piece. The source electrode connecting piece, the control panel, the MOS tube set and the drain electrode connecting plate are arranged in the protective shell in a covering mode, the protective shell is inserted into the heat dissipation base in a sleeved mode, and a cavity formed by the protective shell and the heat dissipation base is filled with pouring sealant. The protective shell is arranged on the outer side of each component, and the pouring sealant is injected into the cavity, so that the protective performance can be effectively improved, and the working stability and durability of each component are improved.

Description

Technical Field

[0001] This utility model relates to the field of electroplating power supply technology, and in particular to an integrated MOS transistor synchronous rectification device. Background Technology

[0002] With the development of electronic power technology, MOSFETs, due to their advantages such as fast switching speed, low voltage drop, low loss, and small size, have replaced diodes and are widely used as synchronous rectifiers in switching power supplies and pulse switches in pulse power supplies. Patent announcement number CN 218123389 (U type) discloses a parallel packaging device for MOSFETs, including MOSFET modules, a source conductive heat-conducting plate, a drain conductive heat-conducting plate, and a circuit board insulated from the source conductive heat-conducting plate. The circuit board is mounted on the source conductive heat-conducting plate. Drain conductive heat-conducting plates are provided on both sides of the source conductive heat-conducting plate, spaced apart from each other. Two sets of MOSFET modules are respectively soldered onto the drain conductive heat-conducting plate. Each MOSFET module includes multiple MOSFETs arranged side-by-side. The drain of the MOSFET is soldered to the drain conductive heat-conducting plate, the gate of the MOSFET is soldered to the circuit board, and the source of the MOSFET is soldered to the source conductive heat-conducting plate. An insulating thermally conductive adhesive layer is provided on the bottom surface of the source conductive heat-conducting plate and / or the bottom surface of the drain conductive heat-conducting plate.

[0003] During operation, the aforementioned products and existing MOSFETs or diodes in rectifier tubes have their components directly exposed, especially in air-cooled environments. External impurities, dust, and moisture can easily corrode these components, reducing the stability and durability of the rectifier tube and increasing usage and maintenance costs. Utility Model Content

[0004] The purpose of this invention is to provide an integrated MOS transistor synchronous rectification device. By setting protective shells on the outside of each component and injecting potting compound into the cavity, the protection performance can be effectively improved, and the working stability and durability of each component can be enhanced.

[0005] The above-mentioned technical objective of this utility model is achieved through the following technical solution:

[0006] An integrated MOSFET synchronous rectification device includes a source connector, a control board, two opposing MOSFET groups, and two drain connectors. The two drain connectors are fixedly mounted on the side wall of a heat sink base. The source connector is located on the upper side of the heat sink base, and the control board is located between the heat sink base and the source connector.

[0007] The source connector, control board, MOS transistor group and drain connector are housed inside a protective housing, which is fitted onto a heat sink base.

[0008] The above technical solution effectively prevents external impurities from entering the components through the protective housing, thereby improving the stability and durability of the components.

[0009] Furthermore, the upper part of the protective shell is provided with an injection port.

[0010] The cavity formed by the source connector, control board, MOSFET assembly, drain connector, heat sink, and protective housing is filled with potting compound. After installing all components and the protective housing, potting compound is injected through the injection port to further enhance protective performance, such as waterproofing, moisture resistance, and corrosion resistance, enabling the components to operate normally under harsh environmental conditions. The elastic properties of the potting compound provide a certain degree of shock absorption and vibration damping, reducing the impact of external shocks and vibrations on electronic components and improving their reliability and lifespan. Electronic potting compound can fill the gaps between components, resulting in a neat appearance for the entire electronic device and providing dimensional stability, preventing component displacement or deformation during use.

[0011] Furthermore, the protective housing is provided with source electrode insertion holes and control electrode insertion holes;

[0012] The source connector has a source plug plate formed on it, and the source plug plate is inserted into the source plug plate hole.

[0013] A control electrode insert is sleeved inside the hole of the control electrode insert, and the control electrode insert is electrically connected to the control board.

[0014] By setting corresponding insertion holes on the protective housing, the position of each insertion board can be further defined, thereby further improving the stability of the installation position of each component.

[0015] Furthermore, the protruding end of the source plate through the protective housing has a folded edge with bolt holes. Nuts are correspondingly installed in these bolt holes and are fixed inside the protective housing. External wires can be easily connected via the cooperation of external screws and nuts, while the folded edge prevents the protective housing from detaching from the heat sink base.

[0016] Furthermore, the heat dissipation base includes an integrally formed main conductive part and a main heat dissipation part, wherein the cross-sectional area of ​​the main heat dissipation part is larger than that of the main conductive part.

[0017] The heat sink base has the functions of conducting electricity and heat, and the heat dissipation effect can be increased by setting a main heat dissipation part with a larger area.

[0018] The outstanding effect of this utility model is:

[0019] Compared with existing technologies, by setting protective shells on the outside of each component and injecting potting compound into the cavity, the protective performance can be effectively improved, and the working stability and durability of each component can be enhanced.

[0020] By using a heat dissipation base with a larger cross-sectional area, the heat dissipation effect can be effectively improved.

[0021] Meanwhile, its components are arranged in a reasonable manner, which facilitates installation and glue application. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of this utility model;

[0023] Figure 2 This is a schematic diagram of the present invention with the protective shell and potting compound removed;

[0024] Figure 3 This is a cross-sectional view of the present invention;

[0025] Figure 4 This is a schematic diagram of the source electrode connector of this utility model;

[0026] Figure 5 This is a schematic diagram of the structure of the protective shell of this utility model;

[0027] Figure 6 This is a schematic diagram of the MOS transistor of this utility model.

[0028] Reference numerals: 1. Source connector; 11. Source insert plate; 12. Folded edge; 13. Bolt hole;

[0029] 2. Control panel;

[0030] 3. MOSFET group; 31. Source; 32. Gate; 33. Drain;

[0031] 4. Drain connection plate;

[0032] 5. Heat sink base; 51. Main conductive part; 52. Main heat dissipation part;

[0033] 6. Protective housing; 61. Source electrode insertion hole; 62. Control electrode insertion hole; 63. Glue injection port;

[0034] 7. Potting compound;

[0035] 8. Control electrode plug-in board;

[0036] 9. Nuts. Detailed Implementation

[0037] The specific embodiments of this utility model will be described in further detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate this utility model, but are not intended to limit its scope.

[0038] The following is for reference Figures 1 to 6 The embodiments of this utility model are described below:

[0039] An integrated MOSFET synchronous rectification device, such as Figure 1 , Figure 2 , Figure 6 As shown, the system includes a source connector (1), a control board (2), two opposing MOSFET groups (3), and two drain connection plates (4). The source (31) of each MOSFET is soldered to the source connector (1), and the gate (32) of each MOSFET is soldered to the control board (2). The drain (33) of each MOSFET group (3) is soldered to a corresponding drain connection plate (4). The two drain connection plates (4) are fixedly mounted on the sidewall of a heat sink base (5). The source connector (1) is located on the upper side of the heat sink base (5), and the control board (2) is located between the heat sink base (5) and the source connector (1). The source connector (1), control board (2), MOSFET groups (3), and drain connection plates (4) are enclosed in a protective housing (6), which is fitted onto the heat sink base (5). The heat sink base (5) is made of aluminum, which offers good economy and conductivity. The source connector and drain connection plates are generally made of copper. The protective housing effectively prevents external impurities from entering the components, thereby improving the stability and durability of the components.

[0040] like Figure 3 As shown, the upper part of the protective housing 6 is provided with a glue injection port 63. The cavity formed by the source connector 1, control board 2, MOS transistor group 3, drain connector 4, heat sink base 5 and protective housing 6 is filled with potting compound 7. The potting compound is injected from the glue injection port. The potting compound can be epoxy resin, polyurethane, etc.

[0041] like Figure 4 , Figure 5 As shown, the protective housing 6 has a source electrode insertion hole 61 and a control electrode insertion hole 62.

[0042] A source electrode insertion plate 11 is formed on the source electrode connector 1, and the source electrode insertion plate 11 is inserted into the source electrode insertion plate hole 61.

[0043] A control electrode insert 8 is sleeved inside the hole 62 of the control electrode insert, and the control electrode insert 8 is electrically connected to the control board 2.

[0044] like Figure 3 As shown, the protruding end of the source plate 11 through the protective housing 6 has a folded edge 12, and bolt holes 13 are formed on the folded edge 12. Nuts 9 are correspondingly provided in the bolt holes 13 and are fixed inside the protective housing 6.

[0045] like Figure 2 As shown, the heat dissipation base 5 includes an integrally formed main conductive part 51 and a main heat dissipation part 52, with the cross-sectional area of ​​the main heat dissipation part 52 being larger than that of the main conductive part 51. The heat dissipation base has the functions of conducting electricity and heat, and the heat dissipation effect can be increased by setting a main heat dissipation part with a larger area.

[0046] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present utility model. These improvements and modifications assumed above should also be considered within the protection scope of the present utility model.

Claims

1. An integrated MOS synchronous rectifier device, comprising a source connection (1), a control board (2), two oppositely arranged MOS transistor groups (3) and two drain connection boards (4), characterized in that: Two drain connection plates (4) are fixed to each other on the side wall of the heat sink base (5); the source connection (1) is located on the upper side of the heat sink base (5), and the control board (2) is located between the heat sink base (5) and the source connection (1); The source connector (1), control board (2), MOS transistor group (3) and drain connector (4) are encased in a protective housing (6), which is fitted onto a heat sink base (5).

2. The integrated MOS transistor synchronous rectification device according to claim 1, characterized in that: The upper part of the protective housing (6) is provided with an injection port (63).

3. The integrated MOS transistor synchronous rectification device according to claim 2, characterized in that: The cavity formed by the source connector (1), control board (2), MOS transistor group (3), drain connector (4), heat sink base (5) and protective shell (6) is filled with potting compound (7).

4. The integrated MOSFET synchronous rectification device of claim 1, wherein: The protective housing (6) has a source electrode insertion hole (61) and a control electrode insertion hole (62). The source connector (1) has a source plug plate (11) formed on it, and the source plug plate (11) is inserted into the source plug plate hole (61); A control electrode insert (8) is sleeved inside the hole (62) of the control electrode insert, and the control electrode insert (8) is electrically connected to the control board (2).

5. The integrated MOS transistor synchronous rectification device according to claim 4, characterized in that: The source plate (11) has a folded edge (12) formed at the protruding end through the protective shell (6). A bolt hole (13) is formed on the folded edge (12). A nut (9) is provided in the bolt hole (13). The nut (9) is fixed inside the protective shell (6).

6. The integrated MOSFET synchronous rectification device of claim 1, wherein: The heat dissipation base (5) includes an integrally formed main conductive part (51) and a main heat dissipation part (52), the cross-sectional area of ​​the main heat dissipation part (52) being larger than that of the main conductive part (51).

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