Carrier positioning structure, graphite plate, quartz carrying platform and tray base

Abstract

The utility model relates to a carrier positioning structure, a graphite disc, a quartz carrying platform and a tray base, the carrier positioning structure is used for coaxial positioning cooperation of the graphite disc for epitaxial growth of silicon carbide and the carrying platform base, the carrier positioning structure comprises a positioning structure and a positioning cooperation structure, the positioning structure and the graphite plate are coaxially arranged at the bottom of the graphite plate, the positioning matching structure and the carrying table base are coaxially arranged at the top of the carrying table base, and the positioning structure and the positioning matching structure are matched in a concave-convex mode so that the graphite plate and the carrying table base can be coaxially arranged on the carrying table base. When the graphite plate is placed, the positioning structure on the graphite plate can be matched with the positioning matching structure on the carrying table base, so that the graphite plate and the carrying table base are coaxial, particles generated by friction between the graphite plate and the carrying table base when the position of the graphite plate is subsequently adjusted can be avoided, and the product quality is ensured.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide epitaxial growth technology, and in particular to a carrier positioning structure, a graphite disk, a quartz stage and a tray base. Background Technology

[0002] Silicon carbide (SiC), as a typical representative of third-generation wide-bandgap semiconductor materials, has the characteristics of critical breakdown field strength, high thermal conductivity, high electron saturation drift velocity, large bandgap width, and strong radiation resistance. It greatly improves the energy conversion efficiency of power devices and meets the requirements of next-generation power electronic equipment for higher power, smaller size, and better adaptability to harsh environments such as high temperature and high radiation. It has broad application prospects in many fields such as ultra-high voltage power transmission networks, new energy vehicles, and rail transportation.

[0003] Unlike Si devices, SiC devices cannot be fabricated directly on a single-crystal substrate. Instead, they are fabricated on a high-quality SiC epitaxial layer. During fabrication, the wafer is first placed on a graphite disk, and then the graphite disk and wafer are manually placed together onto the quartz stage of the loading cavity in the silicon carbide epitaxial growth equipment. The graphite disk is then moved left and right, and up and down to ensure it is centered on the quartz stage. Finally, a robotic arm transfers the graphite disk and wafer together into the process cavity of the silicon carbide epitaxial growth equipment for heated epitaxial growth. During the movement of the graphite disk, its bottom may rub against the quartz stage, generating particles. When the loading cavity is closed, these particles may be blown onto the wafer surface, resulting in defects. Utility Model Content

[0004] The first objective of this invention is to provide a carrier positioning structure that can position the graphite disk when it is placed on the carrier base, ensuring that the graphite disk and the carrier base are coaxial, and avoiding the generation of particles due to friction between the graphite disk and the carrier base when adjusting the position of the graphite disk.

[0005] The second objective of this utility model is to provide a graphite disk, a quartz stage, and a tray base having the above-mentioned carrier positioning structure.

[0006] To achieve the above objectives, this utility model provides the following technical solution:

[0007] A carrier positioning structure for coaxial positioning and mating of a graphite disk for silicon carbide epitaxial growth and a stage base, comprising:

[0008] A positioning structure is coaxially disposed at the bottom of the graphite disk;

[0009] A positioning and fitting structure is provided, which is coaxially disposed on the top of the platform base. The positioning structure and the positioning and fitting structure are in a concave-convex fit so that the graphite disk can be placed coaxially with the platform base on the platform base.

[0010] In one embodiment of this application, one of the positioning structure and the positioning mating structure is an annular boss, and the other is an annular groove.

[0011] In one embodiment of this application, the annular boss includes a base plane, an inner circumferential wall surface of the boss, and an outer circumferential wall surface of the boss. The base plane is used to be disposed on the graphite disk or the platform base. The inner circumferential wall surface and the outer circumferential wall surface of the boss extend from the base plane in a direction away from the base plane. At least one of the inner circumferential wall surface and the outer circumferential wall surface of the boss is inclined from the end connected to the base plane, so that the ends of the inner circumferential wall surface and the outer circumferential wall surface of the boss away from the base plane are close to each other.

[0012] In one embodiment of this application, the inner circumferential wall surface of the boss is connected to the end of the outer circumferential wall surface of the boss that is away from the base plane.

[0013] In one embodiment of this application, the annular groove includes a circumferential inner wall surface and a circumferential outer wall surface. The circumferential inner wall surface of the groove is used to contact and engage with the circumferential inner wall surface of the boss, and the circumferential outer wall surface of the groove is used to contact and engage with the circumferential outer wall surface of the boss.

[0014] In one embodiment of this application, the annular groove further includes a contact plane, the inner circumferential wall of the groove surrounds the contact plane, and the circumferential edge of the contact plane is connected to the upper edge of the inner circumferential wall of the groove.

[0015] In one embodiment of this application, the annular groove further includes a clearance groove, the inner circumferential wall of the groove surrounds the clearance groove, and the upper edge of the clearance groove is connected to the upper edge of the inner circumferential wall of the groove.

[0016] A graphite disk has a positioning structure at its bottom, which is coaxially arranged with the graphite disk. The positioning structure is used to engage with a positioning mating structure coaxially arranged on the top of a platform base, so that the graphite disk is placed coaxially with the platform base on the platform base.

[0017] In one embodiment of this application, the positioning structure is an annular boss, which includes a base plane, an inner circumferential wall surface, and an outer circumferential wall surface. The base plane is used to be disposed on the graphite disk. The inner circumferential wall surface and the outer circumferential wall surface extend from the base plane in a direction away from the base plane. At least one of the inner circumferential wall surface and the outer circumferential wall surface is inclined from the end connected to the base plane, so that the ends of the inner circumferential wall surface and the outer circumferential wall surface away from the base plane are close to each other.

[0018] In one embodiment of this application, the inner circumferential wall surface of the boss is connected to the end of the outer circumferential wall surface of the boss that is away from the base plane.

[0019] In one embodiment of this application, the circumferential outer wall of the boss starts from the circumferential wall of the graphite disk and extends away from the graphite disk along a direction parallel to the axis of the graphite disk.

[0020] In one embodiment of this application, the circumferential wall of the graphite disk is provided with an annular extension, which extends outward along the radial direction of the graphite disk.

[0021] A quartz stage is provided for a loading cavity in silicon carbide epitaxial growth to support a graphite disk as described above. The top of the quartz stage is provided with a positioning and fitting structure coaxial with the quartz stage. The positioning and fitting structure engages with a positioning structure on the graphite disk to make the graphite disk coaxial with the quartz stage.

[0022] In one embodiment of this application, the positioning and mating structure is an annular groove, which includes an inner circumferential wall surface and an outer circumferential wall surface. At least one of the inner circumferential wall surface and the outer circumferential wall surface is inclined so that the upper edges of the inner circumferential wall surface and the outer circumferential wall surface are far apart from each other.

[0023] In one embodiment of this application, the annular groove further includes a contact plane, the inner circumferential wall of the groove surrounds the contact plane, and the circumferential edge of the contact plane is connected to the upper edge of the inner circumferential wall of the groove.

[0024] A tray base is provided for a silicon carbide epitaxial growth process cavity to support a graphite disk as described above. The top of the tray base is provided with a positioning and fitting structure coaxial with the tray base. The positioning and fitting structure engages with a positioning structure on the graphite disk to make the graphite disk coaxial with the tray base.

[0025] In one embodiment of this application, the positioning and mating structure is an annular groove, which includes an inner circumferential wall surface and an outer circumferential wall surface. At least one of the inner circumferential wall surface and the outer circumferential wall surface is inclined so that the upper edges of the inner circumferential wall surface and the outer circumferential wall surface are far apart from each other.

[0026] In one embodiment of this application, the annular groove further includes a clearance groove, the inner circumferential wall of the groove surrounds the clearance groove, and the upper edge of the clearance groove is connected to the upper edge of the inner circumferential wall of the groove.

[0027] As can be seen from the above technical solutions, this utility model discloses a carrier positioning structure for coaxial positioning and mating of a graphite disk for silicon carbide epitaxial growth with a carrier base. The carrier positioning structure includes a positioning structure and a positioning mating structure. The positioning structure is coaxially disposed at the bottom of the graphite disk with the graphite disk, and the positioning mating structure is coaxially disposed at the top of the carrier base with the carrier base. The positioning structure and the positioning mating structure are in a concave-convex fit so that the graphite disk can be placed coaxially with the carrier base on the carrier base.

[0028] When placing the graphite disk, the positioning structure on the graphite disk can cooperate with the positioning and fitting structure on the stage base to make the graphite disk and the stage base coaxial. This can avoid the generation of particles due to friction between the graphite disk and the stage base when adjusting the position of the graphite disk later, thus ensuring product quality. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 A top view of a graphite disk provided for an embodiment of this utility model;

[0031] Figure 2 A cross-sectional view of a graphite disk provided for an embodiment of this utility model;

[0032] Figure 3 A cross-sectional view of the quartz stage provided in an embodiment of this utility model;

[0033] Figure 4 A cross-sectional view of the tray base provided in an embodiment of this utility model.

[0034] In the picture:

[0035] 100 is a graphite disk; 110 is a loading boss; 120 is an annular extension; 130 is an annular boss; 131 is the outer circumferential wall of the boss; 132 is the inner circumferential wall of the boss.

[0036] 200 is a quartz stage; 210 is the first annular enclosure; 300 is a tray base; 310 is the second annular enclosure; 220 and 320 are annular grooves; 221 and 321 are the outer circumferential walls of the grooves; 222 and 322 are the inner circumferential walls of the grooves; 230 is a contact plane; 330 is a clearance groove. Detailed Implementation

[0037] One of the core features of this invention is to provide a carrier positioning structure. The structural design of this carrier positioning structure enables it to position the graphite disk when it is placed on the carrier base, ensuring that the graphite disk and the carrier base are coaxial and avoiding the generation of particles due to friction between the graphite disk and the carrier base when adjusting the position of the graphite disk.

[0038] Another core aspect of this utility model is to provide a graphite disk, quartz stage, and tray base that employ the aforementioned carrier positioning structure.

[0039] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0040] Please see Figures 1 to 4 .

[0041] This utility model discloses a carrier positioning structure for coaxial positioning and cooperation between the graphite disk 100 of silicon carbide epitaxial growth and the stage base. Here, the stage base can be a quartz stage 200 in the loading cavity of the silicon carbide epitaxial growth equipment, or a tray base 300 in the process cavity of the silicon carbide epitaxial growth equipment. The carrier positioning structure includes a positioning structure and a positioning and cooperation structure.

[0042] The positioning structure and the positioning mating structure are in a concave-convex fit, the positioning structure is coaxially disposed at the bottom of the graphite disk 100 and the positioning mating structure is coaxially disposed at the top of the platform base, and the positioning structure and the positioning mating structure are in a concave-convex fit so that the graphite disk 100 can be placed coaxially with the platform base on the platform base.

[0043] Compared with the prior art, the carrier positioning structure provided in this embodiment of the utility model is respectively set at the bottom of the graphite disk 100 and the top of the carrier base for supporting the graphite disk 100. When the graphite disk 100 is placed, the positioning structure on the graphite disk 100 can cooperate with the positioning and mating structure on the carrier base, so that the graphite disk 100 and the carrier base are coaxial. This can avoid the generation of particles by friction between the graphite disk 100 and the carrier base when the position of the graphite disk 100 is adjusted later, thus ensuring product quality.

[0044] In one specific embodiment of this application, one of the positioning structure and the positioning mating structure is an annular boss 130, and the other is an annular groove adapted to the annular boss 130 (when the stage base is a quartz stage 200 for loading cavity of silicon carbide epitaxial growth, it is an annular groove 220; when the stage base is a tray base 300 for process cavity of silicon carbide epitaxial growth, it is an annular groove 320). One or more annular bosses 130 and annular grooves can be provided. When multiple annular bosses 130 and annular grooves are provided, the multiple annular bosses 130 are arranged in concentric circles and layered, and the annular grooves are also arranged in concentric circles and layered.

[0045] Of course, the annular boss 130 and the annular groove are only one specific implementation scheme provided by this application, and are not actually limited to this. For example, one of the positioning structure and the positioning mating structure can be a columnar boss, and the other can be a columnar groove that is adapted to the columnar boss.

[0046] It is understandable that the coaxiality of the positioning structure and the positioning mating structure with the graphite disk 100 or the platform base does not necessarily mean that each annular boss 130 or each annular groove is coaxial with it. Rather, it can be coaxial with the overall structure formed by multiple annular bosses 130 or the overall structure formed by multiple annular grooves. For example, when the positioning structure includes an annular boss 130 located in the center and multiple annular bosses 130 evenly distributed around the central annular boss 130, it can also be considered that the positioning structure is coaxial with the graphite disk 100, which also achieves the effect of coaxial positioning.

[0047] Specifically, such as Figure 2 As shown, the annular boss 130 includes a base plane, an inner circumferential wall surface 132, and an outer circumferential wall surface 131. The base plane is used to be disposed on the graphite disk 100 or the platform base. The inner circumferential wall surface 132 and the outer circumferential wall surface 131 extend from the base plane in a direction away from the base plane. At least one of the inner circumferential wall surface 132 and the outer circumferential wall surface 131 is inclined from the end connected to the base plane, that is, at least one of the inner circumferential wall surface 132 and the outer circumferential wall surface 131 is a conical surface, so that the ends of the inner circumferential wall surface 132 and the outer circumferential wall surface 131 away from the base plane are close to each other.

[0048] Furthermore, such as Figure 2 As shown, the inner circumferential wall surface 132 of the boss is connected to the outer circumferential wall surface 131 of the boss at one end away from the base plane, so that the end of the annular boss 130 originating from the graphite disk 100 or the platform base is a pointed tip.

[0049] Accordingly, such as Figure 3 and Figure 4 As shown, the annular groove that mates with the annular boss 130 includes an inner circumferential wall surface and an outer circumferential wall surface. The inner circumferential wall surface of the groove is used to contact and mate with the inner circumferential wall surface 132 of the boss, and the outer circumferential wall surface of the groove is used to contact and mate with the outer circumferential wall surface 131 of the boss. That is, if the inner circumferential wall surface 132 of the boss is a conical surface, then the inner circumferential wall surface of the groove is also a conical surface with the same inclination angle. If the outer circumferential wall surface 131 of the boss is a conical surface, then the outer circumferential wall surface of the groove is also a conical surface with the same inclination angle. In this way, the annular boss and the annular groove can be contacted and mated by two conical surfaces with the same inclination angle, thereby achieving coaxial positioning. Compared with a vertical plane, this reduces the requirements for machining accuracy.

[0050] like Figure 3 As shown, the annular groove also includes a contact plane 230. The inner wall of the groove surrounds the contact plane 230, and the circumferential edge of the contact plane 230 is connected to the upper edge of the inner wall of the groove. When the annular groove is provided on the graphite disk 100, the contact plane 230 engages with the top of the platform base. When the annular groove is provided on the platform base, the contact plane 230 engages with the bottom of the graphite disk 100.

[0051] It is foreseeable that during the epitaxial growth process, the wafer temperature gradually decreases radially from the center, resulting in uneven heating of the entire wafer and consequently, significant uniformity in epitaxial density and thickness. To avoid this problem, in one embodiment of this application, such as... Figure 4 As shown, the annular groove also includes a relief groove 330. The inner wall of the groove surrounds the relief groove 330. The upper edge of the relief groove 330 is connected to the upper edge of the inner wall of the groove. The relief groove 330 can suspend the graphite disk 100 below the center, reducing the temperature difference between the center and the edge of the wafer.

[0052] Based on the aforementioned vehicle positioning structure, this application embodiment also provides a graphite disk 100, such as... Figure 1 and Figure 2As shown, a positioning structure is provided at the bottom of the graphite disk 100, and a carrier boss 110 for supporting the wafer is provided at the top of the graphite disk 100. The positioning structure is coaxially arranged with the graphite disk 100 and is used to cooperate with a positioning mating structure coaxially arranged at the top of the stage base so that the graphite disk 100 and the stage base are coaxially placed on the stage base. The positioning structure and the positioning mating structure are concave and convex to achieve coaxial positioning and cooperation between the graphite disk 100 and the stage base, including the quartz stage 200 located in the silicon carbide epitaxial growth loading cavity and the tray base 300 located in the silicon carbide epitaxial growth process cavity.

[0053] like Figure 2 As shown, in a specific embodiment of this application, the positioning structure on the graphite disk 100 is an annular boss 130. The annular boss 130 includes a base plane, an inner circumferential wall surface 132, and an outer circumferential wall surface 131. The base plane is used to be disposed on the graphite disk 100. The inner circumferential wall surface 132 and the outer circumferential wall surface 131 extend from the base plane in a direction away from the base plane. At least one of the inner circumferential wall surface 132 and the outer circumferential wall surface 131 is inclined from the end connected to the base plane, that is, at least one of the inner circumferential wall surface 132 and the outer circumferential wall surface 131 is a conical surface, so that the ends of the inner circumferential wall surface 132 and the outer circumferential wall surface 131 away from the base plane are close to each other.

[0054] Figure 2 In the embodiment shown, the inner circumferential wall surface 132 of the boss is connected to the base plane at a position 0 to 1 / 2 of the radius of the graphite disk 100 from the center point of the graphite disk 100.

[0055] like Figure 2 As shown, the inner circumferential wall surface 132 of the boss is connected to the outer circumferential wall surface 131 of the boss at one end away from the base plane, so that the end of the annular boss 130 away from the graphite disk 100 is the tip.

[0056] Please see Figure 2 The outer circumferential wall 131 of the boss starts from the circumferential wall of the graphite disk 100 and extends away from the graphite disk 100 along the axis parallel to the graphite disk 100, that is, the outer circumferential wall 131 of the boss is flush with the circumferential wall of the graphite disk 100.

[0057] To further optimize the above technical solution, an annular extension 120 is provided on the circumferential wall of the graphite disk 100. The annular extension 120 extends outward along the radial direction of the graphite disk 100. The annular extension 120 can facilitate the transfer of the graphite disk 100 by manual labor and robotic arms.

[0058] This application embodiment also provides a quartz stage 200 for a silicon carbide epitaxial growth loading cavity to support the graphite disk 100 as described above, such as Figure 3 As shown, the top of the quartz stage 200 is provided with a positioning and fitting structure coaxial with the quartz stage 200. The positioning and fitting structure cooperates with the positioning structure on the graphite disk 100 so that the graphite disk 100 and the quartz stage 200 are coaxial. The positioning structure of the graphite disk 100 and the positioning and fitting structure of the quartz stage 200 are in concave-convex fit so that the graphite disk 100 can be set coaxially with the quartz stage 200, avoiding the generation of particles by friction between the graphite disk 100 and the quartz stage 200 when adjusting the graphite disk 100.

[0059] like Figure 3 As shown, in a specific embodiment of this application, the positioning and mating structure is an annular groove 220. The annular groove 220 includes an inner circumferential wall surface 222 and an outer circumferential wall surface 221. At least one of the inner circumferential wall surface 222 and the outer circumferential wall surface 221 is inclined so that the upper edges of the inner circumferential wall surface 222 and the outer circumferential wall surface 221 are far apart from each other. That is, the annular groove 220 is an inverted triangular groove or an inverted trapezoidal groove with an opening size larger than the bottom size.

[0060] The inner wall surface 222 of the groove contacts and engages with the inner wall surface 132 of the boss, and the outer wall surface 221 of the groove contacts and engages with the outer wall surface 131 of the boss.

[0061] like Figure 3 As shown, the bottom of the inner wall surface 222 of the annular groove 220 is connected to the bottom of the outer wall surface 221 of the groove.

[0062] Please see Figure 3 In one embodiment of this application, the annular groove 220 further includes a contact plane 230, the inner wall surface 222 of the groove surrounds the contact plane 230, and the circumferential edge of the contact plane 230 is connected to the upper edge of the inner wall surface 222 of the groove.

[0063] like Figure 3 As shown, the edge of the quartz stage 200 is provided with a first annular barrier 210 that rises in a direction away from the quartz stage 200. The annular groove 220 is formed by the first annular barrier 210. The circumferential inner wall surface of the first annular barrier 210 is the circumferential outer wall surface 221 of the groove of the annular groove 220. The top surface of the annular barrier 210 away from the quartz stage 200 is used to contact and cooperate with the annular lower surface of the annular extension 120 on the graphite disk 100.

[0064] This application embodiment also provides a tray base 300 for a silicon carbide epitaxial growth process cavity to support the graphite disk 100 as described above, such as Figure 4As shown, the top of the tray base 300 is provided with a positioning and fitting structure coaxial with the tray base 300. The positioning and fitting structure cooperates with the positioning structure on the graphite disk 100 so that the graphite disk 100 and the tray base 300 are coaxial. The positioning structure of the graphite disk 100 and the positioning and fitting structure of the tray base 300 are in concave-convex fit, so that the graphite disk 100 can be set coaxially with the tray base 300 on the tray base 300, avoiding the generation of particles by friction between the graphite disk 100 and the tray base 300 when adjusting the graphite disk 100.

[0065] exist Figure 4 In the embodiment shown, the positioning and fitting structure is an annular groove 320. The annular groove 320 includes an inner circumferential wall surface 322 and an outer circumferential wall surface 321. At least one of the inner circumferential wall surface 322 and the outer circumferential wall surface 321 is inclined so that the upper edges of the inner circumferential wall surface 322 and the outer circumferential wall surface 321 are far apart from each other, so that the annular groove 320 is an inverted triangular groove or an inverted trapezoidal groove with an opening size larger than the bottom size.

[0066] The inner wall surface 322 of the groove contacts and engages with the inner wall surface 132 of the boss, and the outer wall surface 321 of the groove contacts and engages with the outer wall surface 131 of the boss.

[0067] It is foreseeable that the graphite disk 100 and the wafer on it need to be heated in the process chamber. The wafer temperature gradually decreases radially from the center, resulting in uneven wafer temperature. To improve this problem, such as Figure 4 As shown, the annular groove 320 also includes a relief groove 330. The inner wall surface 322 of the groove surrounds the relief groove 330. The upper edge of the relief groove 330 is connected to the upper edge of the inner wall surface 322 of the groove, so that after the graphite disk 100 is placed on the tray base 300, the center of the graphite disk 100 is suspended through the relief groove 330, which reduces the temperature difference between the center and the edge of the wafer and improves the problem of uneven heating of the epitaxial wafer during the growth process.

[0068] like Figure 4 As shown, the edge of the tray base 300 is provided with a second annular barrier that rises in a direction away from the tray base 300. The annular groove 320 is surrounded by the second annular barrier 310. The circumferential inner wall surface of the second annular barrier 310 is the circumferential outer wall surface 321 of the groove of the annular groove 320. The top surface of the annular barrier 310 away from the tray base 300 is used to contact and cooperate with the annular lower surface of the annular extension 120 on the graphite disk 100.

[0069] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "a," and / or "the" are not specifically singular and may include the plural. Generally, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements. An element defined by the phrase "comprising an..." does not exclude the presence of other identical elements in the process, method, product, or apparatus that includes the element.

[0070] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0071] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0072] This article uses specific examples to illustrate the principles and implementation methods of this utility model. The descriptions of the above embodiments are only for the purpose of helping to understand the core ideas of this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made to this utility model without departing from the principles of this utility model, and these improvements and modifications also fall within the protection scope of the claims of this utility model.

Claims

1. A carrier positioning structure for coaxial positioning and cooperation between a graphite disk (100) for silicon carbide epitaxial growth and a stage base, characterized in that, include: A positioning structure is coaxially disposed at the bottom of the graphite disk (100) with the graphite disk (100); A positioning and fitting structure is provided on the top of the platform base coaxially with the platform base. The positioning structure and the positioning and fitting structure are in concave-convex fit so that the graphite disk (100) can be placed on the platform base coaxially with the platform base.

2. The vehicle positioning structure according to claim 1, characterized in that, One of the positioning structure and the positioning mating structure is an annular boss (130), and the other is an annular groove.

3. The vehicle positioning structure according to claim 2, characterized in that, The annular boss (130) includes a base plane, an inner circumferential wall surface (132) of the boss, and an outer circumferential wall surface (131) of the boss. The base plane is used to be disposed on the graphite disk (100) or the platform base. The inner circumferential wall surface (132) and the outer circumferential wall surface (131) of the boss extend from the base plane in a direction away from the base plane. At least one of the inner circumferential wall surface (132) and the outer circumferential wall surface (131) of the boss is inclined from the end connected to the base plane, so that the ends of the inner circumferential wall surface (132) and the outer circumferential wall surface (131) of the boss away from the base plane are close to each other.

4. The vehicle positioning structure according to claim 3, characterized in that, The inner circumferential wall surface (132) of the boss is connected to the end of the outer circumferential wall surface (131) of the boss that is away from the base plane.

5. The vehicle positioning structure according to claim 4, characterized in that, The annular groove includes a circumferential inner wall surface and a circumferential outer wall surface. The circumferential inner wall surface of the groove is used to contact and cooperate with the circumferential inner wall surface (132) of the boss, and the circumferential outer wall surface of the groove is used to contact and cooperate with the circumferential outer wall surface (131) of the boss.

6. The vehicle positioning structure according to claim 5, characterized in that, The annular groove also includes a contact plane (230), the inner wall of the groove surrounds the contact plane (230), and the circumferential edge of the contact plane (230) is connected to the upper edge of the inner wall of the groove.

7. The vehicle positioning structure according to claim 5, characterized in that, The annular groove also includes a relief groove (330), the inner wall of the groove surrounds the relief groove (330), and the upper edge of the relief groove (330) is connected to the upper edge of the inner wall of the groove.

8. A graphite disk, characterized in that, The bottom of the graphite disk (100) is provided with a positioning structure. The positioning structure is coaxially arranged with the graphite disk (100). The positioning structure is used to engage with a positioning mating structure coaxially arranged on the top of the platform base so that the graphite disk (100) is placed coaxially with the platform base on the platform base.

9. The graphite disk according to claim 8, characterized in that, The positioning structure is an annular boss (130), which includes a base plane, an inner circumferential wall surface (132) and an outer circumferential wall surface (131). The base plane is used to be disposed on the graphite disk (100). The inner circumferential wall surface (132) and the outer circumferential wall surface (131) extend from the base plane in a direction away from the base plane. At least one of the inner circumferential wall surface (132) and the outer circumferential wall surface (131) is inclined from the end connected to the base plane so that the ends of the inner circumferential wall surface (132) and the outer circumferential wall surface (131) away from the base plane are close to each other.

10. The graphite disk according to claim 9, characterized in that, The inner circumferential wall surface (132) of the boss is connected to the end of the outer circumferential wall surface (131) of the boss that is away from the base plane.

11. The graphite disk (100) according to claim 9, characterized in that, The outer circumferential wall surface (131) of the boss starts from the circumferential wall of the graphite disk (100) and extends away from the graphite disk (100) along the axis parallel to the graphite disk (100).

12. The graphite disk (100) according to claim 8, characterized in that, The graphite disk (100) has an annular extension (120) on its circumferential disk wall, and the annular extension (120) extends outward along the radial direction of the graphite disk (100).

13. A quartz stage for a loading cavity in silicon carbide epitaxial growth to support the graphite disk (100) as described in claim 8, characterized in that, The top of the quartz stage (200) is provided with a positioning and fitting structure coaxial with the quartz stage (200). The positioning and fitting structure is in concave-convex fit with the positioning structure on the graphite disk (100) so that the graphite disk (100) is coaxial with the quartz stage (200).

14. The quartz stage according to claim 13, characterized in that, The positioning and fitting structure is an annular groove (220), which includes an inner circumferential wall surface (222) and an outer circumferential wall surface (221). At least one of the inner circumferential wall surface (222) and the outer circumferential wall surface (221) is inclined so that the upper edges of the inner circumferential wall surface (222) and the outer circumferential wall surface (221) are far apart from each other.

15. The quartz stage according to claim 14, characterized in that, The annular groove (220) further includes a contact plane (230), the inner wall surface (222) of the groove surrounds the contact plane (230), and the circumferential edge of the contact plane (230) is connected to the upper edge of the inner wall surface (222) of the groove.

16. A tray base for a silicon carbide epitaxial growth process cavity to support a graphite disk (100) as described in claim 8, characterized in that, The top of the tray base (300) is provided with a positioning and fitting structure coaxial with the tray base (300). The positioning and fitting structure is in concave-convex fit with the positioning structure on the graphite disk (100) so that the graphite disk (100) is coaxial with the tray base (300).

17. The tray base (300) according to claim 16, characterized in that, The positioning and fitting structure is an annular groove (320), which includes an inner circumferential wall surface (322) and an outer circumferential wall surface (321). At least one of the inner circumferential wall surface (322) and the outer circumferential wall surface (321) is inclined so that the upper edges of the inner circumferential wall surface (322) and the outer circumferential wall surface (321) are far apart from each other.

18. The tray base (300) according to claim 17, characterized in that, The annular groove (320) further includes a relief groove (330), the inner circumferential wall surface (322) of the groove surrounds the relief groove (330), and the upper edge of the relief groove (330) is connected to the upper edge of the inner circumferential wall surface (322) of the groove.

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