Accompanying sheet structure

Abstract

The utility model relates to the technical field of LED (light-emitting diode) manufacturing process, in particular to an accompanying chip structure, which comprises a substrate and an oxide layer, the oxide layer is formed on the substrate by evaporation, and the thickness of the oxide layer is not less than 450 angstroms. The oxide layer is evaporated on the substrate, so that the oxide layer can be used as a transition layer, and subsequent evaporated metal is prevented from being in direct contact with the substrate; meanwhile, the surface of the oxide layer has hydrophilicity, so that metal atoms can be effectively adsorbed, and the adhesion between the substrate and metal is further enhanced; besides, the oxide layer also enables the roughness of the surface of the substrate to be increased, metal atoms can be slightly diffused on the surface of the oxide layer to form a mechanical interlocking structure, the adhesion of the metal on the substrate is further improved, and the situation that the metal evaporation thickness cannot be monitored due to the fact that the evaporated metal falls off from an accompanying piece is avoided.

Description

Technical Field

[0001] This utility model relates to the field of LED manufacturing technology, and more specifically, to a wafer structure. Background Technology

[0002] Metal plating is a crucial step in LED chip manufacturing, aiming to achieve efficient current injection and distribution, and improve luminous efficacy. LED chips are made of semiconductor materials (such as GaN) and need to be connected to external circuits via metal electrodes. Current is injected into the p-type and n-type regions of the chip to excite electron-hole recombination and light emission. This is commonly referred to as the P / N electrode.

[0003] To improve the adhesion, conductivity, and reliability of the LED chip, multiple layers of metal need to be deposited. Furthermore, to accommodate the microstructure requirements of LED chips, the metal deposition process needs to precisely control the thickness of the metal layers.

[0004] In order to monitor the thickness of the metal film in each operation, one or more auxiliary films are usually carried during the operation for thickness monitoring. However, in actual operation, the auxiliary films often detach from the mold (that is, the metal deposited on the auxiliary film falls off the auxiliary film), making it impossible to test the film thickness. Utility Model Content

[0005] The purpose of this invention is to provide a substrate structure to improve the adhesion between the metal and the substrate during the vapor deposition process, and to prevent the vapor-deposited metal from falling off the substrate, thus making it impossible to monitor the thickness of the vapor-deposited metal.

[0006] This utility model is implemented as follows:

[0007] A substrate structure includes: a substrate; an oxide layer formed on the substrate by vapor deposition, wherein the oxide layer has a thickness of not less than 450 angstroms.

[0008] Furthermore, the substrate includes a quartz glass substrate or a silicon wafer.

[0009] Furthermore, the oxide layer includes an indium tin oxide layer or a silicon oxide layer.

[0010] Furthermore, the liner structure also includes adhesive tape, which is applied to the oxide layer.

[0011] Furthermore, the area of ​​the tape is smaller than the area of ​​the oxide layer, and the size of the tape includes 40mm*5mm.

[0012] Furthermore, the tape can withstand temperatures exceeding 260 degrees Celsius.

[0013] Furthermore, after the metal evaporation of the substrate structure is completed, the tape is removed to form a metal step, so that the metal thickness of this evaporation can be measured.

[0014] Furthermore, the metal vapor-deposited includes Cr, Ti, Au, and Ag.

[0015] Compared with the prior art, the present invention has the following beneficial effects: The present invention provides a substrate and an oxide layer, wherein the oxide layer is deposited on the substrate by vapor deposition, and the thickness of the oxide layer is not less than 450 angstroms. By vapor deposition of the oxide layer on the substrate, the oxide layer can serve as a transition layer, preventing the subsequently deposited metal from directly contacting the substrate; at the same time, since the surface of the oxide layer is hydrophilic, it can effectively adsorb metal atoms, thereby enhancing the adhesion between the substrate and the metal; in addition, the oxide layer also increases the surface roughness of the substrate, allowing metal atoms to diffuse slightly on the oxide surface, forming a mechanical interlocking structure, further improving the adhesion of the metal on the substrate, and preventing the deposited metal from falling off the substrate, thus avoiding the situation where the metal deposition thickness cannot be monitored.

[0016] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0017] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. The components of the embodiments of this utility model described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this utility model provided in the accompanying drawings is not intended to limit the scope of the claimed utility model, but merely to illustrate selected embodiments of the utility model. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without inventive effort are within the scope of protection of this utility model.

[0018] Figure 1 A schematic diagram of the accompanying sheet structure provided by this utility model is shown.

[0019] Figures 2(a) and 2(b) show schematic diagrams of another accompaniment structure provided by this utility model.

[0020] Figure 3 A schematic diagram of a metal vapor deposition method provided by this utility model is shown.

[0021] Figure 4 A schematic diagram of the accompanying sheet structure after removing the tape provided by this utility model is shown.

[0022] Illustration:

[0023] 100 - Accompanying structure; 110 - Substrate; 120 - Oxide layer; 130 - Adhesive tape. Detailed Implementation

[0024] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0025] Please refer to Figure 1 The diagram shown is a schematic representation of a liner structure 100 provided by this utility model. The liner structure 100 includes:

[0026] The substrate 110 is typically a circular wafer, but to meet different application requirements, it can also be any other shape, such as rectangular or rhomboid. Furthermore, in this embodiment of the invention, the substrate 110 is a quartz glass substrate or a silicon wafer. It is readily understood that, depending on actual application requirements, the substrate 110 can also be made of other substrate materials.

[0027] An oxide layer 120 is uniformly formed on the substrate 110 via a vapor deposition process. Typically, in the LED chip manufacturing process, indium tin oxide (ITO) vapor deposition or silicon oxide deposition is performed. Therefore, the oxide layer 120 can be deposited simultaneously with the substrate 110 during the LED chip manufacturing process, eliminating the need for additional processes and making the formation of the oxide layer 120 more convenient. Therefore, in this embodiment of the invention, the oxide layer 120 is preferably an indium tin oxide layer or a silicon oxide layer. It is readily understood that other materials can also be selected for the oxide layer 120 to meet other requirements. Furthermore, in this embodiment of the invention, the thickness of the oxide layer 120 is not less than 450 angstroms to avoid the problem of the vapor-deposited metal easily detaching from the substrate 110 due to weak adhesion in subsequent processes.

[0028] Please refer to Figures 2(a) and 2(b), which are schematic diagrams of another auxiliary sheet structure 100 provided by this utility model. Figure 2(a) is a top view and Figure 2(b) is a cross-sectional view. The auxiliary sheet structure 100 also includes an adhesive tape 130.

[0029] In other words, during the actual metal evaporation process for LED chips, the auxiliary wafer structure 100 is placed together with it. By measuring the metal thickness on the auxiliary wafer structure 100, the metal thickness deposited on the LED chip under the current metal evaporation process is reflected. To facilitate the measurement of the metal thickness on the auxiliary wafer structure 100, adhesive tape 130 needs to be applied to the auxiliary wafer structure 100 before starting the metal evaporation process. The adhesive tape 130 is used to cover part of the surface of the auxiliary wafer structure 100. That is, the area of ​​the adhesive tape 130 is smaller than the area of ​​the oxide layer 120, and its size is preferably 40mm*5mm. At the same time, the adhesive tape 130 is usually made of polyimide, which can withstand high temperatures exceeding 260°C, and is not easy to curl up with strong adhesion. After being peeled off, no residue is left on the covered surface, which will not affect the subsequent metal thickness measurement.

[0030] Please refer to Figure 3 The diagram shown is a schematic representation of a metal vapor deposition process according to an embodiment of this invention. When an LED chip requires a metal vapor deposition process, the prepared die structure shown in Figure 2 is placed together with the LED chip into the vapor deposition chamber for the metal vapor deposition process. Figure 3 The diagram shows the state of the substrate structure 100 after metal vapor deposition. Since the substrate structure 100 is covered with adhesive tape 130, the part with adhesive tape 130 has a thicker metal vapor deposition than the part without adhesive tape 130, resulting in an uneven state.

[0031] It's important to note that to balance improving chip adhesion, conductivity, and reliability, LED chips typically require the deposition of multiple layers of metal structures of varying thicknesses at different stages of the manufacturing process. The specific metal material chosen for each deposition layer is primarily influenced by the underlying material it contacts and the intended use of the metal layer. Commonly used metals include Cr, Ti, Au, and Ag. Specifically, Ti and Cr exhibit good adhesion, enhancing the bond between the metal layer and the underlying material. Cr also forms good ohmic contacts with epitaxial layers (such as GaN). However, Cr has low reflectivity, directly impacting chip brightness. Therefore, Ti is often used as the first layer when a metal layer is present. High-brightness chips, such as automotive-grade chips, often use Ag as the first layer. Ag has the best conductivity (higher than copper) and high reflectivity (>95%), improving brightness. However, Ag is prone to oxidation and requires a protective layer. The Au layer is chosen as the first layer because of its high conductivity and chemical stability, which can ensure low contact resistance and long-term reliability of the chip. Therefore, the choice of the metal first layer in chip manufacturing is usually based on the process performance.

[0032] Please refer to Figure 4 The diagram shown is a schematic representation of a liner structure 100 after removing the adhesive tape 130, according to an embodiment of this utility model. Figure 3 After the metal vapor deposition is completed, the tape 130 is removed. At this time, the metal formed on the tape 130 will also be removed to expose the oxide layer 120, forming a metal step with the metal film in the surrounding area where there is no tape 130. At this time, the thickness H of the metal obtained by vapor deposition in this metal vapor deposition process can be measured.

[0033] It should be noted that when the substrate 110 is the only component of the wafer structure 100, if the substrate 110 is directly used to accompany the LED chip for metal evaporation, the presence of grease, dust, oxides, or moisture on the surface of the substrate 110 will hinder the direct contact between metal atoms and the substrate, leading to decreased adhesion and easy metal detachment. However, after depositing an oxide layer 120 on the surface of the substrate 110, impurities on the surface of the wafer structure 100 can be reduced, reducing demolding caused by dirt. At the same time, since the substrate 110 is made of quartz glass or silicon wafer, and quartz glass is an inert material with a lack of active groups on its surface, it is difficult for metal atoms to form strong chemical bonds with it. In addition, the increased thickness of subsequent metal stacking can easily lead to demolding. However, if an oxide layer 120 is deposited on the surface of the substrate 110, the oxide layer 120, as a transition layer, can directly prevent the substrate 110 from directly contacting the metal. At the same time, the hydrophilicity of the oxide surface layer can effectively adsorb metal atoms, enhancing the adhesion to the metal. Furthermore, the oxide layer 120 can increase the surface roughness of the substrate structure 100, allowing metal atoms to diffuse slightly on the oxide surface and form a mechanically interlocked structure. Therefore, the technical solution provided by this invention can completely solve the problem of easy metal detachment from the substrate structure 100 in different metal vapor deposition processes, making it impossible to measure the thickness of the deposited metal.

[0034] In summary, the present invention provides a substrate and an oxide layer, wherein the oxide layer is deposited on the substrate by vapor deposition, and the thickness of the oxide layer is not less than 450 angstroms. By depositing the oxide layer on the substrate, the oxide layer can serve as a transition layer, preventing the subsequently deposited metal from directly contacting the substrate. Simultaneously, due to the hydrophilicity of the oxide layer surface, it can effectively adsorb metal atoms, thereby enhancing the adhesion between the substrate and the metal. Furthermore, the oxide layer also increases the surface roughness of the substrate, allowing metal atoms to diffuse slightly on the oxide surface, forming a mechanically interlocking structure, further improving the adhesion of the metal to the substrate and preventing the deposited metal from detaching from the substrate, thus preventing the inability to monitor the metal deposition thickness.

[0035] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0036] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0037] In the description of this utility model, it should be noted that the terms "upper," "lower," "left," "right," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only used for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. The above description is only a preferred embodiment of this utility model and is not intended to limit this utility model. For those skilled in the art, this utility model can have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A supporting structure, characterized in that, The accompanying structure includes: substrate; An oxide layer is formed on the substrate by vapor deposition, and the thickness of the oxide layer is not less than 450 angstroms.

2. The accompanying structure as described in claim 1, characterized in that, The substrate includes a quartz glass substrate or a silicon wafer.

3. The accompanying structure as described in claim 1, characterized in that, The oxide layer includes an indium tin oxide layer or a silicon oxide layer.

4. The accompanying structure as described in claim 1, characterized in that, The accompanying structure also includes adhesive tape, which is applied to the oxide layer.

5. The accompanying structure as described in claim 4, characterized in that, The area of ​​the tape is smaller than the area of ​​the oxide layer, and the size of the tape includes 40mm*5mm.

6. The accompanying structure as described in claim 4, characterized in that, The tape can withstand temperatures exceeding 260 degrees Celsius.

7. The accompanying structure as described in claim 4, characterized in that, After the accompanying sheet structure completes the metal vapor deposition, the tape is removed to form a metal step, so that the metal thickness of this vapor deposition can be measured by measuring the metal step.

8. The liner structure as described in claim 7, characterized in that, The metals vapor-deposited include Cr, Ti, Au, and Ag.

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