Substrate with fast adjustable temperature uniformity

Abstract

The utility model discloses a kind of substrate of temperature uniformity can be quickly adjusted, belong to CVD artificial synthesis diamond field. Including: for supporting the edge support ring of sample;Multiple groups are used to assist sample heat dissipation annular ring;Multiple groups the annular ring are set in the edge support ring, and are sequentially nested from inside to outside.Setting compared with prior art, the annular ring of multiple groups nested inside and outside, the size of each group annular ring, placement position, quantity can be adjusted according to different sample, to be able to adapt to the heat dissipation demand of different sample, for different size, different height, different material sample, can be through to annular ring Suitable matching, to quickly adjust temperature uniformity, to avoid the problem that more different heat dissipation effect metal substrate needs to be prepared due to sample different.

Description

Technical Field

[0001] This invention belongs to the field of CVD artificial diamond synthesis, and specifically relates to a substrate with rapidly adjustable temperature uniformity. Background Technology

[0002] Currently, synthetic diamond is mainly produced using two methods: high-temperature high-pressure (HPHT) and chemical vapor deposition (CVD). Among these, microwave plasma chemical vapor deposition (MPCVD) is the preferred method for diamond preparation due to its advantages such as no electrode contamination and large deposition area. In the MPCVD process for synthesizing diamond crystals, a substrate made of a high-melting-point metal material such as molybdenum is placed on a platform in the center of the microwave resonant cavity to support a seed crystal or Si wafer. A single-crystal diamond film can be deposited on the seed crystal for single-crystal synthesis; a polycrystalline diamond film can be deposited on the Si wafer for polycrystalline synthesis.

[0003] Existing metal substrates are typically simple disks with a relatively uniform structure. Diamond seed crystals, Si wafers, or other samples are placed on the surface of the metal disk. Generally, the surface of the metal substrate is flat. However, due to differences in sample size, thickness, and material, growth requirements vary, necessitating special designs on the substrate surface to match sample growth. Due to the characteristics of plasma, the plasma density distribution within the cavity is not uniform, exhibiting a high plasma density in the central region and a low plasma density at the edges, resulting in an ellipsoidal plasma shape within the cavity. The metal substrate and sample are placed flat beneath the plasma, leading to a high temperature at the sample center and a low temperature at the edges, resulting in uneven diamond film thickness and affecting the growth quality. Furthermore, when growing large-area polycrystalline films, inconsistent temperatures can cause significant stress in the film, leading to cracks.

[0004] To address the above issues, the current solution is to replace the metal substrate that carries the sample and design trenches of different shapes and sizes on the metal substrate to indirectly change the heat dissipation capacity of different areas of the metal substrate. This often requires several or even dozens of experiments to find a metal substrate with a relatively uniform surface temperature, which is quite time-consuming and labor-intensive. Utility Model Content

[0005] To address the aforementioned issues, the present invention aims to provide a substrate with rapidly adjustable temperature uniformity, adaptable to different samples, thereby avoiding the need to prepare multiple metal substrates with varying heat dissipation effects due to different samples.

[0006] To achieve the above objectives, the technical solution of this utility model is as follows:

[0007] This invention provides a substrate with rapidly adjustable temperature uniformity, comprising:

[0008] Edge support rings used to support the sample;

[0009] Multiple sets of circular rings to assist in heat dissipation from the sample;

[0010] Multiple sets of the aforementioned rings are all disposed within the edge support ring, and are nested sequentially from the inside to the outside.

[0011] Furthermore, the edge support ring can cooperate with the sample and the base in the microwave resonant cavity to form a closed space, which can prevent plasma from entering below the sample during the sample growth process, thereby avoiding damage to the sample.

[0012] Furthermore, the inner diameter of each group of rings is the same as the outer diameter of its innermost ring, ensuring that the rings in each group contact each other sequentially from the inside out, with the outermost ring's outer ring contacting the inner wall of the edge support ring. This structural arrangement ensures that the rings and the edge support ring are seamlessly integrated, eliminating gaps and effectively dissipating heat from the sample through the rings and edge support ring, thus improving heat dissipation.

[0013] Furthermore, the height of each group of rings is not lower than the height of its outer ring, so that the height of each group of rings decreases from the middle to both sides, and the heat dissipation effect in the middle is higher than that on both sides, thereby making the temperature of the entire sample more uniform.

[0014] Furthermore, each group of rings includes one or more rings, which are stacked together.

[0015] Furthermore, a central cylinder is provided in the middle of the innermost ring, and a connection hole for connecting the lifting platform is provided at the bottom of the central cylinder. It can be connected to the molybdenum rod of the lifting platform through the connection hole, so that the substrate can be lifted and lowered by the lifting platform to adjust its height.

[0016] The beneficial effects of this utility model are as follows: Compared with the prior art, this application sets up multiple sets of nested inner and outer rings. The size, placement position, and number of each set of rings can be adjusted according to different samples, thereby adapting to the heat dissipation requirements of different samples. For samples of different sizes, heights, and materials, the temperature uniformity can be quickly adjusted by appropriately matching the rings, thereby avoiding the problem of needing to prepare many metal substrates with different heat dissipation effects due to different samples. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the substrate structure.

[0018] Figure 2 This is a schematic diagram of the structure of a substrate with the sample.

[0019] Figure 3 yes Figure 2 Exploded view.

[0020] Figure 4 yes Figure 2 Cross-sectional view.

[0021] In the figure: 1. Sample; 2. Edge support ring; 3. First group of rings; 4. Second group of rings; 5. Third group of rings; 6. Fourth group of rings; 7. Fifth group of rings; 8. Sixth group of rings; 9. Enclosed space; 10. Central cylinder; 11. Connecting hole. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0023] To achieve the above objectives, the technical solution of this utility model is as follows:

[0024] See Figure 1-4 As shown, this embodiment provides a substrate with rapidly adjustable temperature uniformity, comprising:

[0025] Edge support ring 2 is used to support sample 1;

[0026] Six sets of rings are used to assist in heat dissipation of sample 1, namely ring 3 in the first set, ring 4 in the second set, ring 5 in the third set, ring 6 in the fourth set, ring 7 in the fifth set, and ring 8 in the sixth set;

[0027] All six sets of rings are disposed within the edge support ring 2, and the first set of rings 3, the second set of rings 4, the third set of rings 5, the fourth set of rings 6, the fifth set of rings 7, and the sixth set of rings 8 are nested sequentially from the inside out.

[0028] Furthermore, the edge support ring 2 can cooperate with the sample 1 and the base in the microwave resonant cavity to form a closed space 9, which can prevent plasma from entering below the sample 1 during the growth of the sample 1, thereby avoiding damage to the sample 1.

[0029] The sample 1 in this application uses a molybdenum stage. During use, the edge support ring 2 is placed on the base in the middle of the microwave resonant cavity, and the sample 1 is placed on the edge support ring 2, thereby forming a closed space 9 within the edge support ring 2. The ring is set in the closed space 9, which can conduct heat from the sample 1 and assist the sample 1 in heat dissipation. Compared with the prior art, this application sets up six sets of inner and outer nested rings. The size, placement position, and number of each set of rings can be adjusted according to different samples 1. As the diameter of the ring decreases, its placement position will change accordingly. Multiple rings can be set in each set and stacked together. By adjusting their height, it can adapt to the heat dissipation requirements of different samples 1. For samples 1 of different sizes, heights, and materials, the temperature uniformity can be quickly adjusted by appropriately matching the rings, thereby avoiding the problem of needing to prepare many metal substrates with different heat dissipation effects due to different samples 1.

[0030] Furthermore, the inner diameter of each group of rings is the same as the outer diameter of its innermost ring, ensuring that the rings in each group contact each other sequentially from the inside out, with the outermost ring contacting the inner wall of the edge support ring 2. This structural arrangement ensures that the rings and the edge support ring 2 are seamlessly integrated, eliminating gaps and effectively dissipating the heat from the sample 1 through the rings and edge support ring 2, thus improving heat dissipation.

[0031] Furthermore, each group of rings can be provided with multiple rings, and the height of multiple rings can be adjusted by stacking them together. In this embodiment, the height of each group of rings is not lower than the height of its outer ring, so that the height of each group of rings decreases from the middle to both sides. The heat dissipation effect in the middle is higher than that on both sides, thereby making the temperature of the entire sample 1 more uniform.

[0032] Furthermore, a central cylinder 10 is provided in the middle of the innermost ring. The bottom of the central cylinder 10 is provided with a connection hole 11 for connecting to a lifting platform. It can be connected to the molybdenum rod of the lifting platform through the connection hole 11, thereby enabling the lifting platform to move the substrate up and down and adjust its height. Correspondingly, if the microwave equipment does not have a lifting platform, the size of the central cylinder 10 can be reduced or the central cylinder 10 can be replaced with a ring, increasing the number of rings, so as to achieve more precise adjustment of heat dissipation performance.

[0033] In this embodiment, the substrate design is suitable for MPCVD devices with various microwave frequencies (915MHz / 2450MHz) and multiple reaction cavities. The size of the inner ring group of the substrate can be finely adjusted according to the size of the deposited sample 1, which indirectly changes the heat dissipation effect to match the plasma characteristics. It is suitable for preparing large-area diamond films and can improve the uniformity and quality of the prepared diamond films.

[0034] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A substrate capable of rapid adjustment of temperature uniformity, characterized by, include: Edge support rings used to support the sample; Multiple sets of circular rings to assist in heat dissipation from the sample; Multiple sets of the aforementioned rings are all disposed within the edge support ring, and are nested sequentially from the inside to the outside.

2. The substrate with rapidly adjustable temperature uniformity as described in claim 1, characterized in that, The edge support ring can cooperate with the sample and the base in the microwave resonant cavity to form a closed space.

3. The substrate with rapidly adjustable temperature uniformity as described in claim 1, characterized in that, The inner diameter of each group of rings is the same as the outer diameter of its inner ring, so that the rings in each group contact each other from the inside to the outside, and the outermost ring contacts the inner wall of the edge support ring.

4. A substrate with rapidly adjustable temperature uniformity as described in claim 3, characterized in that, The height of each group of rings is not lower than the height of its outer ring, so that the height of each group of rings decreases sequentially from the middle to both sides.

5. A substrate with rapidly adjustable temperature uniformity as described in claim 1, characterized in that, Each group of rings includes one or more rings, and the rings are stacked on top of each other.

6. A substrate with rapidly adjustable temperature uniformity as described in claim 1, characterized in that, A central cylinder is provided in the middle of the innermost ring, and a connection hole for connecting the lifting platform is provided at the bottom of the central cylinder.

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