A highly efficient integrated semiconductor thermoelectric generator

Abstract

The utility model belongs to generator technical field, concretely is a kind of efficient integrated semiconductor thermoelectric generator. The integrated semiconductor thermoelectric generator includes thermoelectric conversion module, is equipped with heat absorption component on thermoelectric conversion module, and the bottom of thermoelectric conversion module is equipped with heat dissipation component. Thermoelectric conversion module includes upper ceramic substrate, first metal connecting piece, thermoelectric generation unit, second metal connecting piece and lower ceramic substrate connected in turn by magnesium-based material layer;The two sides of second metal connecting piece are respectively connected with positive guide line and negative guide line. The utility model innovatively integrates magnesium-based thermoelectric material system, graphene composite heat absorption coating and cubic boron nitride heat dissipation framework, and combines the nanowire / quantum dot superlattice structure on the surface of ceramic substrate, cooperates the optimized doping of P-type / N-type thermocouple arm, realizes thermoelectric merit figure≥1.8 in low temperature area, reduces material cost and improves system reliability simultaneously.

Description

Technical Field

[0001] This utility model relates to the field of generator technology, specifically to a high-efficiency integrated semiconductor thermoelectric generator. Background Technology

[0002] Current thermoelectric generators achieve pollution-free, multi-heat-source, and highly efficient energy conversion through the Seebeck effect. Combined with the high reliability and adaptability to extreme environments due to the absence of mechanical parts, flexible applications and technological innovations, such as miniaturization and intelligent control systems, have improved economic efficiency and expanded market potential. Furthermore, policy support has accelerated the global energy structure's transition towards sustainability. As a clean energy solution that directly converts heat energy into electricity, thermoelectric power generation technology shows broad prospects in industrial waste heat recovery and environmental energy harvesting. However, its development is still constrained by multiple bottlenecks: traditional thermoelectric materials such as bismuth telluride (Bi2Te3), tin selenide (SnSe), and manganese telluride (MnTe) generally have a thermoelectric figure of merit (ZT) of less than 1.5 in the low-temperature range (300-700K). For example, although SnSe achieves a peak ZT of 2.4 through Ge doping, its complex preparation process limits its large-scale application. While Mg3Sb2-based materials have high ZT potential, traditional doping processes lead to carrier concentration imbalances. Meanwhile, the extremely low abundance (approximately 0.001 ppm) and toxicity of rare elements such as tellurium (Te) in the Earth's crust drive up the cost of commercial telluride modules. In thermal management systems, the metal fins (thermal conductivity <200 W / m·K) and aluminum-based heat dissipation components struggle to maintain a stable temperature difference, exacerbating energy loss. Furthermore, the soft solder interface between the thermocouple arm and the electrode (resistance up to 10 Ω·m·K) presents challenges. -4 Ω·cm 2 Joule heat loss is caused by metal-semiconductor thermal expansion mismatch, which leads to a shortened device life. Furthermore, commercial nickel-based / carbon-based heat-absorbing coatings (thermal conductivity <500W / m·K) and diamond heat-dissipating coatings have defects such as high brittleness and high cost. For example, although SnSe single crystals have achieved a ZT of 2.6 through stress engineering, their brittleness seriously hinders practical applications. On the other hand, Mg3Sb2-xBix materials are difficult to achieve high-efficiency energy output due to poor interface compatibility. Summary of the Invention

[0003] This invention addresses the aforementioned problems by providing a high-efficiency integrated semiconductor thermoelectric generator. This generator utilizes low-cost, abundant, and non-toxic magnesium-based (Mg3Sb2-xBix) thermoelectric materials to construct P-type / N-type thermocouple arms. It combines a graphene composite heat-absorbing coating with a high-efficiency heat-absorbing component composed of rare-earth zirconate ceramics, a heat dissipation architecture of cubic boron nitride (c-BN) combined with a silicon carbide (SiC) coating, and a nanowire / quantum dot superlattice structure on the upper and lower ceramic substrates, along with a multi-level modular welding integration design. In the low-temperature range (300-700K), it achieves a thermoelectric figure of merit (ZT) ≥ 1.8, exceeding 20% ​​compared to traditional tellurides. Simultaneously, it optimizes the entire process of efficient heat absorption, conduction, conversion, and heat dissipation, solving the problems of low efficiency, high cost, and poor reliability of traditional thermoelectric generators. It also reduces material costs by 50% and extends device lifespan by more than 30%.

[0004] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0005] A high-efficiency integrated semiconductor thermoelectric generator includes a thermoelectric conversion module, wherein the thermoelectric conversion module is provided with a heat-absorbing component and a heat-dissipating component is provided at the bottom of the thermoelectric conversion module;

[0006] The thermoelectric conversion module includes an upper ceramic substrate, a first metal connecting piece, a thermoelectric power generation unit, a second metal connecting piece, and a lower ceramic substrate. The heat-absorbing component, the upper ceramic substrate, the first metal connecting piece, the thermoelectric power generation unit, the second metal connecting piece, the lower ceramic substrate, and the heat dissipation component are connected sequentially through a magnesium-based material layer. Positive and negative guide lines are respectively connected to both sides of the second metal connecting piece.

[0007] Furthermore, the thermoelectric power generation unit includes an array of P-type thermocouple arms and N-type thermocouple arms, with each column of P-type thermocouple arms spaced apart from each column of N-type thermocouple arms.

[0008] Furthermore, the heat-absorbing component is provided with a rare earth zirconate ceramic coating.

[0009] Furthermore, the heat-absorbing component is made of graphene and graphene composite materials.

[0010] Furthermore, nanowire / quantum dot superlattices are deposited and grown on the surfaces of both the upper and lower ceramic substrates.

[0011] Furthermore, the heat dissipation component is made of boron nitride.

[0012] Furthermore, the bottom of the heat dissipation component is coated with silicon carbide.

[0013] By adopting the above technical solution, this utility model achieves at least the following beneficial effects:

[0014] This invention utilizes an innovative material system and structural design, employing a magnesium-based (Mg3Sb2-xBix) thermoelectric material system combined with a nanowire / quantum dot superlattice structure on a ceramic substrate surface, along with optimized doping of P-type / N-type thermocouple arms. This achieves a thermoelectric figure of merit (ZT) ≥ 1.8 in the mid-to-low temperature range (300-700K), exceeding that of traditional telluride materials by over 20%. Furthermore, since magnesium-based materials are abundant, inexpensive, and do not contain toxic elements, they reduce reliance on scarce resources and lower commercial production costs, aligning with the trend of green energy development. In terms of thermal management, the heat-absorbing components are made of graphene composite materials. The device incorporates a novel rare-earth zirconate ceramic coating, and the heat dissipation components are made of cubic boron nitride and combined with a silicon carbide coating, effectively improving heat absorption efficiency, reducing interfacial thermal resistance, and maintaining a stable temperature difference between the hot and cold ends. Benefiting from the excellent heat transfer and power generation performance and chemical stability of magnesium-based materials, as well as the high-temperature resistance and corrosion resistance of the boron nitride and silicon carbide coatings, this invention not only reduces energy and Joule heat loss but also extends service life and can adapt to extreme operating conditions. Furthermore, the modular design, combined with the broad-spectrum absorption characteristics of the graphene heat-absorbing coating, supports adaptation to various scenarios, expands the energy harvesting range, and significantly improves the overall performance of the thermoelectric generator. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the overall structure of a high-efficiency integrated semiconductor thermoelectric generator according to the present invention.

[0016] Figure 2 This is a front view of a high-efficiency integrated semiconductor thermoelectric generator according to the present invention.

[0017] In the figure, 1-rare earth zirconate ceramic coating, 2-heat absorption component, 3-upper ceramic substrate, 4-first metal connecting piece, 5-second metal connecting piece, 6-P-type thermocouple arm, 7-N-type thermocouple arm, 8-lower ceramic substrate, 9-heat dissipation component, 10-silicon carbide coating, 11-positive guide line, 12-negative guide line, 13-magnesium-based material layer. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0019] It should be noted that when a component is described as "fixed to" another component, it can be directly on the other component or may have a component in between. When a component is considered "connected to" another component, it can be directly connected to the other component or may have a component in between. When a component is considered "set on" another component, it can be directly set on the other component or may have a component in between. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0021] Example

[0022] Please also see Figure 1 and Figure 2 A high-efficiency integrated semiconductor thermoelectric generator includes a thermoelectric conversion module with a heat-absorbing component 2 and a rare-earth zirconate ceramic coating 1 on the heat-absorbing component 2. A heat-dissipating component 9 is located at the bottom of the thermoelectric conversion module, and a silicon carbide coating 10 is located at the bottom of the heat-dissipating component 9. The thermoelectric conversion module includes an upper ceramic substrate 3, a first metal connecting piece 4, a thermoelectric power generation unit, a second metal connecting piece 5, and a lower ceramic substrate 8. The heat-absorbing component 2, upper ceramic substrate 3, first metal connecting piece 4, thermoelectric power generation unit, second metal connecting piece 5, lower ceramic substrate 8, and heat-dissipating component 9 are sequentially connected by a magnesium-based material layer 13. The magnesium-based (Mg3Sb2-xBix) material in the magnesium-based material layer 13 can convert a certain degree of energy at the connection point due to a slight temperature difference, reducing energy loss, improving heat transfer efficiency, and is responsible for converting the heat energy generated by the temperature difference between room temperature and nearby into electrical energy. Positive guide lines 11 and negative guide lines 12 are respectively connected to both sides of the second metal connecting piece 5.

[0023] The heat-absorbing component 2 directly contacts the air, absorbing heat from it and transferring it to the hot end of the thermoelectric conversion module. Additionally, the rare-earth zirconate ceramic coating 1 on the surface of the heat-absorbing component 2 has a high thermal conductivity, helping it to better absorb heat energy. After receiving heat, the thermoelectric conversion module converts most of it into electrical energy, with a small portion transferred to the cold end of the module via thermal conduction. The lower ceramic substrate 8 (cold end) of the thermoelectric conversion module transfers heat to the heat dissipation component 9. The heat dissipation component 9 dissipates the heat through thermal conduction and radiation. This product is an integrated semiconductor thermoelectric generator that operates through the connection and coordination of its components, which together constitute a complete integrated semiconductor thermoelectric generator.

[0024] The heat-absorbing component 2, positioned at the top, is made of graphene and graphene composite materials. Graphene and graphene composite materials possess extremely high thermal conductivity, with an in-plane thermal conductivity exceeding 5000 W / (m·K) at room temperature. A novel rare-earth zirconate ceramic coating 1, applied to the surface of the heat-absorbing component 2, effectively reduces heat loss, improves energy utilization efficiency, enhances the efficiency of the thermoelectric generator, and integrates well with the heat-absorbing component 2. The high-entropy rare-earth zirconate ceramic, with a density of 93.7%, has a thermal conductivity of 0.938 W / mK at 25℃ and 1.992 W / mK at 1200℃. The heat-absorbing component 2 transfers heat to the hot end of the thermoelectric conversion module.

[0025] The heat-absorbing component 2 can improve the working efficiency of the integrated semiconductor thermoelectric generator. The metal connecting pieces (including the first metal connecting piece 4 and the second metal connecting piece 5) have good thermal conductivity, which can quickly transfer heat from the high-temperature end to the low-temperature end, forming a stable temperature gradient and creating conditions for the Seebeck effect to occur. At the same time, the metal connecting pieces, as a conductive medium, can allow the generated current to be smoothly transmitted in the circuit, realizing the output of electrical energy.

[0026] Nanowire / quantum dot superlattices are deposited and grown on the surfaces of both the upper ceramic substrate 3 and the lower ceramic substrate 8. The nanowire / quantum dot superlattice deposited and grown on the surface of the upper ceramic substrate 3 (hot end) exhibits a unique quantum confinement effect, which enhances the Seebeck coefficient and thus improves thermoelectric conversion efficiency. Taking materials from some studies as examples, in the SnSe material system, Ge doping promotes valence band alignment, significantly enhancing the Seebeck coefficient, resulting in a high peak ZT of 2.4 and an average ZT as high as 0.9 for polycrystalline SnSe. Ga doping in SnSe induces bandgap aggregation and resonant level effects, effectively improving the Seebeck coefficient and power factor, raising the highest thermoelectric figure of merit of polycrystalline SnSe to 2.2. In MnTe materials, Cu and Ag co-doping can converge the multi-valence band electronic structure of MnTe and generate a high density of states in the electronic structure of MnTe, which helps to improve the Seebeck coefficient, ultimately resulting in a ZT value of 1.3 for MnTe. Other studies have shown that Ge-Sb-S alloying promotes valence band convergence and increases electronic state density in MnTe materials, resulting in a significant enhancement of the Seebeck coefficient and increasing the thermoelectric figure of merit (ZT) of the material to 1.6.

[0027] The metal connector is made of copper, which has excellent thermal conductivity, enabling rapid heat transfer from the high-temperature end to the low-temperature end, forming a stable temperature gradient and creating conditions for the Seebeck effect. Simultaneously, the metal connector acts as a conductive medium, allowing the generated current to flow smoothly through the circuit, thus enabling electrical energy output. The thermal and electrical conductivity of the copper connector varies slightly depending on factors such as the purity of the copper and the specific alloy composition. Generally, pure copper has a thermal conductivity of approximately 401 W / (m·K) and an electrical conductivity of approximately 59.6 × 10^6 S / m.

[0028] The thermoelectric power generation unit comprises an array of P-type thermocouple arms 6 and N-type thermocouple arms 7, with each column of P-type thermocouple arms 6 spaced apart from each column of N-type thermocouple arms 7. Charge carriers in the P-type and N-type thermocouple arms 6 and 7 of the thermoelectric power generation unit can move directionally under the drive of the temperature difference, generating an electromotive force and forming a current, thereby completing power generation. The P-type and N-type thermocouple arms 6 and 7 of the thermoelectric power generation element are made of magnesium-based (Mg3Sb2-xBix) material. Magnesium-based (Mg3Sb2-xBix) material has high thermoelectric performance and stability, and the magnesium-based (Mg3Sb2-xBix) material system is characterized by its low cost, high thermoelectric performance, and abundant elemental reserves. Specifically, the magnesium-based (Mg3Sb2-xBix) doped in the P-type thermocouple arm 6 can introduce holes as the main charge carriers, thereby forming a P-type material. For example, some studies have used Zn-Ag co-doping to modulate the thermoelectric properties of p-type Mg3Sb2-based compounds. Doping atoms replace certain atoms in the crystal lattice, altering the material's electronic structure and making it easier for electrons in the valence band to be excited to the conduction band, leaving holes to participate in conductivity, thus giving the material p-type conductivity. Additionally, N-type thermocouple arms 7 can be made into N-type materials by increasing the electron concentration through specific doping methods. For example, adding other elements to Mg3Sb2-based materials, such as in the preparation of n-type Mg... 3.2 Bi 0.996 SbSe 0.004 During the sample preparation, by adjusting the solid solution ratio of Mg3Bi2 and Mg3Sb2, the amount of Se doping, and optimizing the sintering process, the average zT of the material at 300-700K reached more than 1, exhibiting good N-type thermoelectric properties.

[0029] The nanowire / quantum dot superlattice deposited and grown on the surface of the lower ceramic substrate 8 (cold end) possesses a unique quantum confinement effect, which enhances the Seebeck coefficient and thus improves the thermoelectric conversion efficiency. The lower ceramic substrate 8 (cold end) is welded to the heat dissipation component 9 using magnesium-based (Mg3Sb2-xBix) material. The heat dissipation component 9 is made of boron nitride (BN). Cubic boron nitride (c-BN) has a high thermal conductivity, reaching 1300-1500 W / (m·K), and exhibits excellent high-temperature stability, chemical stability, and insulation. Hexagonal boron nitride (h-BN) also has good thermal conductivity and insulation. The heat dissipation component 9 maintains a temperature gradient, effectively dissipating heat from the low-temperature end and ensuring a consistent temperature difference between the high-temperature and low-temperature ends of the thermoelectric generator. This is crucial for generating the thermoelectric effect and ensuring a continuous and stable output of electrical energy from the generator.

[0030] In addition, the surface of the heat dissipation component 9 is coated with a silicon carbide (Sic) coating. The silicon carbide (Sic) coating has high thermal conductivity, which can help the base material dissipate heat better, reduce the temperature of the component during operation, and improve its heat dissipation performance.

Claims

1. A highly efficient integrated semiconductor thermoelectric generator, characterized by, The thermoelectric conversion module includes a heat-absorbing component (2) on the thermoelectric conversion module and a heat-dissipating component (9) at the bottom of the thermoelectric conversion module. The thermoelectric conversion module includes an upper ceramic substrate (3), a first metal connecting piece (4), a thermoelectric power generation unit, a second metal connecting piece (5), and a lower ceramic substrate (8). The heat-absorbing component (2), the upper ceramic substrate (3), the first metal connecting piece (4), the thermoelectric power generation unit, the second metal connecting piece (5), the lower ceramic substrate (8), and the heat-dissipating component (9) are connected in sequence through a magnesium-based material layer (13). The second metal connecting piece (5) is connected to a positive guide line (11) and a negative guide line (12) on both sides.

2. The high-efficient integrated semiconductor thermoelectric generator according to claim 1, wherein The thermoelectric power generation unit includes an array of P-type thermocouple arms (6) and N-type thermocouple arms (7), with each column of P-type thermocouple arms (6) and each column of N-type thermocouple arms (7) spaced apart.

3. The high-efficiency integrated semiconductor thermoelectric generator according to claim 1 or 2, characterized in that, The heat-absorbing component (2) is provided with a rare earth zirconate ceramic coating (1).

4. The high-efficiency integrated semiconductor thermoelectric generator according to claim 1, characterized in that, Nanowire / quantum dot superlattices are deposited and grown on the surfaces of both the upper ceramic substrate (3) and the lower ceramic substrate (8).

5. The high-efficiency integrated semiconductor thermoelectric generator according to claim 1, characterized in that, The heat dissipation component (9) is made of boron nitride.

6. The high-efficiency integrated semiconductor thermoelectric generator according to claim 1, characterized in that, The bottom of the heat dissipation component (9) is provided with a silicon carbide coating (10).

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