Display substrate and display device

Abstract

This invention provides a display substrate and a display module, belonging to the field of display technology. The display substrate includes a display area and a gate driving circuit area surrounding the display area. The display substrate includes a substrate and a thin-film transistor (TFT) on the substrate, the TFT including a gate. The display substrate further includes: a conductive pattern located in the gate driving circuit area, the conductive pattern being situated between the gate and the substrate, with an insulating layer separating the conductive pattern from the gate, and the conductive pattern being connected to the gate through a via penetrating the insulating layer; and a water-oxygen barrier layer located on the side of the conductive pattern facing the substrate, the orthographic projection of the conductive pattern onto the substrate falling within the orthographic projection of the water-oxygen barrier layer onto the substrate. The technical solution of this invention can improve the stability of thin-film transistor devices during high-temperature and high-humidity operation testing.

Description

Technical Field

[0001] This utility model relates to the field of display technology, and in particular to a display substrate and a display device. Background Technology

[0002] OLED (Organic Light-Emitting Diode) display devices have been listed as a promising next-generation display technology due to their advantages such as being thin, light, having a wide viewing angle, being actively emitting light, having continuously adjustable emission colors, having low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple manufacturing process, high luminous efficiency, and being flexible in display. Utility Model Content

[0003] The technical problem to be solved by this utility model is to provide a display substrate and display device that can improve the stability of thin film transistor devices in high temperature and high humidity operation tests.

[0004] To solve the above-mentioned technical problems, the embodiments of this utility model provide the following technical solutions:

[0005] On one hand, a display substrate is provided, including a display area and a gate driving circuit area located around the display area. The display substrate includes a substrate and a thin-film transistor located on the substrate, the thin-film transistor including a gate. The display substrate further includes:

[0006] A conductive pattern is located in the gate driving circuit region, the conductive pattern is located between the gate and the substrate, an insulating layer is spaced between the conductive pattern and the gate, and the conductive pattern is connected to the gate through a via penetrating the insulating layer;

[0007] A water-oxygen barrier layer is located on the side of the conductive pattern facing the substrate, and the orthogonal projection of the conductive pattern on the substrate is located within the orthogonal projection of the water-oxygen barrier layer on the substrate.

[0008] In some embodiments, the substrate comprises multiple alternating layers of polyimide and inorganic insulating layers.

[0009] In some embodiments, the substrate includes a first polyimide layer that is closest to the conductive pattern, and the water and oxygen barrier layer is located between the first polyimide layer and the conductive pattern.

[0010] In some embodiments, along a direction away from the conductive pattern, the substrate includes a first inorganic insulating layer, a first polyimide layer, a second inorganic insulating layer, and a second polyimide layer stacked sequentially.

[0011] In some embodiments, the water-oxygen barrier layer is located between the first polyimide layer and the first inorganic insulating layer; and / or

[0012] The water-oxygen barrier layer is located between the conductive pattern and the first inorganic insulating layer.

[0013] In some embodiments, when the water-oxygen barrier layer is located between the conductive pattern and the first inorganic insulating layer, the water-oxygen barrier layer is in direct contact with the conductive pattern.

[0014] In some embodiments, the water-oxygen barrier layer adopts a single-layer structure, and the single-layer structure adopts Ti, silicon nitride or a-Si.

[0015] In some embodiments, the water-oxygen barrier layer adopts a Ti / Al / Ti three-layer structure.

[0016] In some embodiments, the thickness of the water-oxygen barrier layer is 100-400 angstroms.

[0017] An embodiment of this utility model also provides a display device, including the display substrate described above.

[0018] The embodiments of this utility model have the following beneficial effects:

[0019] In the above scheme, a water-oxygen barrier layer is set on the side of the conductive pattern facing the substrate. The orthographic projection of the conductive pattern on the substrate is located within the orthographic projection of the water-oxygen barrier layer on the substrate. In this way, after water vapor corrodes the substrate, the water-oxygen barrier layer can still ensure that the conductive pattern and the substrate are insulated, preventing the charge on the conductive pattern from being conducted away by the substrate. This allows the voltage regulator formed by the conductive pattern to maintain a stable voltage, prevents leakage current abnormalities, and improves the stability of the thin-film transistor device in high-temperature and high-humidity operation tests, avoiding any impact on the display effect and photoelectric characteristics of the display substrate. Attached Figure Description

[0020] Figure 1 This is a planar schematic diagram of a display substrate related to related technologies;

[0021] Figure 2 This is a schematic cross-sectional view of a display substrate in the AA direction for related technologies;

[0022] Figure 3 for Figure 2 The diagram shows the equivalent circuit of the display substrate.

[0023] Figure 4 This is a schematic diagram of the structure of a display substrate according to an embodiment of the present invention;

[0024] Figure 5This is a schematic diagram of the structure of a display substrate according to another embodiment of the present invention;

[0025] Figure 6 This is a schematic diagram of the structure of a display substrate according to another embodiment of the present invention.

[0026] Figure Labels

[0027] 11 Second polyimide layer

[0028] 12 Second Inorganic Insulation Layer

[0029] 13 First polyimide layer

[0030] 14 First Inorganic Insulation Layer

[0031] 15 Barrier Layers

[0032] 16 First Insulation Layer

[0033] 17 Second Insulation Layer

[0034] 18 Conductive patterns

[0035] 19 Active Layer Graphics

[0036] 20 gate

[0037] 21. Water and oxygen barrier layer Detailed Implementation

[0038] To make the technical problems, technical solutions and advantages of the embodiments of this utility model clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.

[0039] With the development of display technology, the requirements for the device stability of thin-film transistors on display substrates are becoming increasingly stringent. Related technologies include... Figure 1 As shown, the display substrate includes a display area and a peripheral area surrounding the display area. The peripheral area includes a GOA (gate drive area) region and an outer perimeter region; as... Figure 2 As shown, in the AA direction, the display substrate includes a substrate and a barrier layer 15, a first insulating layer 16, a second insulating layer 17, and a thin-film transistor located on the substrate. The thin-film transistor includes a gate 20, an active layer pattern 19, and source / drain electrodes (not shown). To achieve a flexible display, the substrate can be composed of alternately stacked polyimide layers and inorganic insulating layers, such as... Figure 2 As shown, the substrate may include a second polyimide layer 11, a second inorganic insulating layer 12, a first polyimide layer 13, and a first inorganic insulating layer 14 stacked sequentially.

[0040] To improve the device characteristics of the thin-film transistor in the GOA region, a conductive pattern 18 is provided in the GOA region of the display substrate. The conductive pattern 18 is electrically connected to the gate 20 through a via penetrating the barrier layer 15 and the first insulating layer 16. The conductive pattern 18 is made of a material with good conductivity, such as Mo. The conductive pattern 18 can be made of the same material as the gate 20 or a different material. Figure 3 for Figure 2 The equivalent circuit diagram of the display substrate shown is as follows: Figure 3 As shown, the voltage regulator capacitor CQ is used to maintain the potential of the gate 20 of the thin film transistor. The conductive pattern 18 serves as one plate of the voltage regulator capacitor CQ, which helps to maintain the potential of point Q, that is, to maintain the potential of the gate 20 of the thin film transistor.

[0041] During high temperature and high humidity operation tests, after the first polyimide layer 13 absorbs water, the first inorganic insulating layer 14 may have defects, which can cause water vapor to penetrate the first inorganic insulating layer 14. This can cause the conductive pattern 18 to become conductive with the first polyimide layer 13, and the charge on the conductive pattern 18 can also be conducted away by the first polyimide layer 13. As a result, the voltage on the conductive pattern 18 cannot be maintained, which ultimately leads to abnormal performance of the thin film transistor and poor stability of the thin film transistor device during high temperature and high humidity operation tests.

[0042] The present invention provides a display substrate and a display device that can improve the stability of thin-film transistor devices during high-temperature and high-humidity operation tests.

[0043] An embodiment of this utility model provides a display substrate, including a display area and a gate driving circuit area located around the display area. The display substrate includes a substrate and a thin-film transistor located on the substrate, the thin-film transistor including a gate; the display substrate further includes:

[0044] A conductive pattern is located in the gate driving circuit region, the conductive pattern is located between the gate and the substrate, an insulating layer is spaced between the conductive pattern and the gate, and the conductive pattern is connected to the gate through a via penetrating the insulating layer;

[0045] A water-oxygen barrier layer is located on the side of the conductive pattern facing the substrate, and the orthogonal projection of the conductive pattern on the substrate is located within the orthogonal projection of the water-oxygen barrier layer on the substrate.

[0046] In this embodiment, a water-oxygen barrier layer is provided on the side of the conductive pattern facing the substrate. The orthographic projection of the conductive pattern on the substrate is located within the orthographic projection of the water-oxygen barrier layer on the substrate. In this way, even after water vapor corrodes the substrate, the water-oxygen barrier layer can still ensure that the conductive pattern and the substrate are insulated, preventing the charge on the conductive pattern from being conducted away by the substrate. This allows the voltage regulator formed by the conductive pattern to maintain a stable voltage, preventing leakage current abnormalities. This, in turn, improves the stability of the thin-film transistor device during high-temperature and high-humidity operation testing and avoids affecting the display effect and photoelectric characteristics of the display substrate.

[0047] To achieve flexible displays, the substrate of the display substrate can be composed of multiple alternating layers of polyimide and inorganic insulating layers, wherein the inorganic insulating layers can be silicon oxide or silicon nitride. If the substrate includes two polyimide layers and two inorganic insulating layers, then the substrate includes polyimide layer 1, inorganic insulating layer 1, polyimide layer 2, and inorganic insulating layer 2 stacked sequentially; if the substrate includes three polyimide layers and three inorganic insulating layers, then the substrate includes polyimide layer 1, inorganic insulating layer 1, polyimide layer 2, inorganic insulating layer 2, polyimide layer 3, and inorganic insulating layer 3 stacked sequentially; and so on.

[0048] In the multilayer polyimide layers included in the substrate, the polyimide layer closest to the conductive pattern is the first polyimide layer. To prevent the first polyimide layer from absorbing water and conducting with the conductive pattern, thus absorbing the charge on the conductive pattern, the water-oxygen barrier layer is located between the first polyimide layer and the conductive pattern. In this way, even if water vapor corrodes the first polyimide layer, the water-oxygen barrier layer can still ensure that the conductive pattern and the first polyimide layer are insulated, preventing the charge on the conductive pattern from being conducted away by the first polyimide layer. This allows the voltage regulator formed by the conductive pattern to maintain a stable voltage, preventing leakage current abnormalities and thus improving the stability of the thin-film transistor device during high-temperature and high-humidity operation testing.

[0049] In one specific embodiment, such as Figure 4 As shown, the display substrate of this embodiment includes a substrate and a barrier layer 15, a first insulating layer 16, a second insulating layer 17, and a thin-film transistor located on the substrate. The thin-film transistor includes a gate 20, an active layer pattern 19, and source and drain electrodes (not shown). To achieve a flexible display, the substrate is composed of alternating layers of polyimide and inorganic insulating layers, such as... Figure 4 As shown, the substrate may include a second polyimide layer 11, a second inorganic insulating layer 12, a first polyimide layer 13, and a first inorganic insulating layer 14 stacked sequentially.

[0050] To improve the device characteristics of thin-film transistors, a conductive pattern 18 is formed in the GOA region of the display substrate. The conductive pattern 18 is electrically connected to the gate 20 through a via penetrating the barrier layer 15 and the first insulating layer 16. The conductive pattern 18 is made of a material with good conductivity, such as Mo. The conductive pattern 18 can be made of the same material as the gate 20, or it can be made of a different material. The shape of the conductive pattern 18 can be approximately the same as the shape of the gate 20, and the size of the conductive pattern 18 can also be the same as the size of the gate 20. This allows the conductive pattern 18 to be fabricated using the same mask as the gate 20, saving on the number of masks. Of course, the size of the conductive pattern 18 can also be different from the size of the gate 20. Figure 3 As shown, the conductive pattern 18 serves as one plate of the voltage regulator capacitor CQ, which helps maintain the potential at point Q, that is, maintain the potential of the gate 20 of the thin-film transistor.

[0051] In this embodiment, the display substrate further includes a water-oxygen barrier layer 21 located between the first inorganic insulating layer 14 and the conductive pattern 18. The water-oxygen barrier layer can be made of Ti. Ti will quickly oxidize into titanium dioxide after contact with oxygen in the air or in a humid and hot environment. Titanium dioxide is a very dense and uniform oxide film with good water and oxygen barrier properties, which can effectively block water and oxygen. After the first polyimide layer 13 is corroded by water vapor, the water-oxygen barrier layer 21 can still ensure that the conductive pattern 18 and the first polyimide layer 13 are insulated, preventing the charge on the conductive pattern 18 from being conducted away by the first polyimide layer 13. This allows the voltage regulator formed by the conductive pattern 18 to maintain a stable voltage, prevent leakage abnormalities, and thus improve the stability of the thin film transistor device in high temperature and high humidity operation tests, and reduce the occurrence of defects under high temperature and high humidity operation tests.

[0052] Specifically, a Ti layer can be formed on the substrate by sputtering to serve as a water and oxygen barrier material. During the sputtering of Ti, oxygen can be introduced into the working environment to accelerate the oxidation of Ti into titanium dioxide.

[0053] In this embodiment, as Figure 4 As shown, the water-oxygen barrier layer 21 can directly contact the conductive pattern 18, and no other film layer is required between the conductive pattern 18 and the water-oxygen barrier layer 21. In order to effectively prevent water and oxygen from invading the conductive pattern 18, the size of the water-oxygen barrier layer 21 is slightly larger than the size of the conductive pattern 18. Specifically, the minimum distance between the boundary of the water-oxygen barrier layer 21 and the boundary of the conductive pattern 18 can be 10-20 micrometers. On the one hand, the water-oxygen barrier layer 21 will not affect the layout of other traces in the GOA area, and on the other hand, the water-oxygen barrier layer 21 can effectively prevent water and oxygen from invading the conductive pattern 18.

[0054] In this embodiment, the thickness of the water and oxygen barrier layer 21 can be 100-400 angstroms. This way, on the one hand, the water and oxygen barrier layer 21 will not significantly increase the thickness of the display substrate, and on the other hand, the water and oxygen barrier layer 21 can effectively prevent water and oxygen from invading the conductive pattern 18.

[0055] In this embodiment, in addition to Ti, the water and oxygen barrier layer 21 can also be made of other materials such as silicon nitride. Silicon nitride can effectively isolate water and oxygen. Furthermore, the barrier layer 15 and inorganic insulating layer in the display substrate are also made of silicon nitride. In this way, the water and oxygen barrier layer 21 can be formed using the process equipment for forming the barrier layer 15 and inorganic insulating layer, without the need for additional process equipment to make the water and oxygen barrier layer 21, which can reduce the difficulty of process implementation.

[0056] In this embodiment, the water and oxygen barrier layer 21 can also be made of amorphous silicon. Amorphous silicon can effectively isolate water and oxygen. The active layer pattern 19 in the display substrate is also made of amorphous silicon. In this way, the water and oxygen barrier layer 21 can be formed using the process equipment for forming the active layer pattern 19. There is no need to add new process equipment to make the water and oxygen barrier layer 21, which can reduce the difficulty of process implementation.

[0057] In this embodiment, the water-oxygen barrier layer 21 can also be a multi-layer structure. For example, the water-oxygen barrier layer 21 can adopt a Ti / Al / Ti three-layer structure, which can further improve the ability of the water-oxygen barrier layer 21 to isolate water and oxygen.

[0058] Specifically, in this embodiment, after fabricating the first inorganic insulating layer 14, a water-oxygen barrier material can be formed on the first inorganic insulating layer 14. The water-oxygen barrier material can be Ti, amorphous silicon, or silicon nitride. The water-oxygen barrier material is patterned to form a water-oxygen barrier layer 21. The surface of the first inorganic insulating layer 14 is flat and has good density, making it easier to etch the water-oxygen barrier material on the first inorganic insulating layer 14 to form a water-oxygen barrier layer 21 with good boundary morphology. Then, conductive patterns 18, barrier layers 15, first insulating layers 16, active layer patterns 19, second insulating layers 17, gate 20, and other film layers are formed sequentially to obtain the display substrate of this embodiment.

[0059] In another specific embodiment, such as Figure 5 As shown, the display substrate of this embodiment includes a substrate and a barrier layer 15, a first insulating layer 16, a second insulating layer 17, and a thin-film transistor located on the substrate. The thin-film transistor includes a gate 20, an active layer pattern 19, and source and drain electrodes (not shown). To achieve a flexible display, the substrate is composed of alternating layers of polyimide and inorganic insulating layers, such as... Figure 4 As shown, the substrate may include a second polyimide layer 11, a second inorganic insulating layer 12, a first polyimide layer 13, and a first inorganic insulating layer 14 stacked sequentially.

[0060] To improve the device characteristics of thin-film transistors, a conductive pattern 18 is formed in the GOA region of the display substrate. The conductive pattern 18 is electrically connected to the gate 20 through a via penetrating the barrier layer 15 and the first insulating layer 16. The conductive pattern 18 is made of a material with good conductivity, such as Mo. The conductive pattern 18 can be made of the same material as the gate 20, or it can be made of a different material. The shape of the conductive pattern 18 can be approximately the same as the shape of the gate 20, and the size of the conductive pattern 18 can also be the same as the size of the gate 20. This allows the conductive pattern 18 to be fabricated using the same mask as the gate 20, saving on the number of masks. Of course, the size of the conductive pattern 18 can also be different from the size of the gate 20. Figure 3 As shown, the conductive pattern 18 serves as one plate of the voltage regulator capacitor CQ, which helps maintain the potential at point Q, that is, maintain the potential of the gate 20 of the thin-film transistor.

[0061] In this embodiment, the display substrate further includes a water and oxygen barrier layer 21 located between the first inorganic insulating layer 14 and the first polyimide layer 13. The water and oxygen barrier layer can be made of Ti. Ti will quickly oxidize to titanium dioxide after contact with oxygen in the air or in a humid and hot environment. Titanium dioxide is a very dense and uniform oxide film with good water and oxygen barrier properties, which can effectively block water and oxygen. After the first polyimide layer 13 is corroded by water vapor, the water and oxygen barrier layer 21 can still ensure that the conductive pattern 18 and the first polyimide layer 13 are insulated, preventing the charge on the conductive pattern 18 from being conducted away by the first polyimide layer 13. This allows the voltage regulator formed by the conductive pattern 18 to maintain a stable voltage, prevent leakage abnormalities, and thus improve the stability of the thin film transistor device in high temperature and high humidity operation tests, and reduce the occurrence of defects under high temperature and high humidity operation tests.

[0062] Specifically, a Ti layer can be formed on the first polyimide layer 13 by sputtering to serve as a water and oxygen barrier material. During the sputtering of Ti, oxygen can be introduced into the working environment to accelerate the oxidation of Ti into titanium dioxide.

[0063] In this embodiment, in order to effectively prevent water and oxygen from invading the conductive pattern 18, the size of the water and oxygen barrier layer 21 is slightly larger than the size of the conductive pattern 18. Specifically, the minimum distance between the boundary of the water and oxygen barrier layer 21 and the boundary of the conductive pattern 18 can be 10-20 micrometers. On the one hand, the water and oxygen barrier layer 21 will not affect the layout of other traces in the GOA area, and on the other hand, the water and oxygen barrier layer 21 can effectively prevent water and oxygen from invading the conductive pattern 18.

[0064] In this embodiment, the thickness of the water and oxygen barrier layer 21 can be 100-400 angstroms. This way, on the one hand, the water and oxygen barrier layer 21 will not significantly increase the thickness of the display substrate, and on the other hand, the water and oxygen barrier layer 21 can effectively prevent water and oxygen from invading the conductive pattern 18.

[0065] In this embodiment, in addition to Ti, the water and oxygen barrier layer 21 can also be made of other materials such as silicon nitride. Silicon nitride can effectively isolate water and oxygen. Furthermore, the barrier layer 15 and inorganic insulating layer in the display substrate are also made of silicon nitride. In this way, the water and oxygen barrier layer 21 can be formed using the process equipment for forming the barrier layer 15 and inorganic insulating layer, without the need for additional process equipment to make the water and oxygen barrier layer 21, which can reduce the difficulty of process implementation.

[0066] In this embodiment, the water and oxygen barrier layer 21 can also be made of amorphous silicon. Amorphous silicon can effectively isolate water and oxygen. The active layer pattern 19 in the display substrate is also made of amorphous silicon. In this way, the water and oxygen barrier layer 21 can be formed using the process equipment for forming the active layer pattern 19. There is no need to add new process equipment to make the water and oxygen barrier layer 21, which can reduce the difficulty of process implementation.

[0067] In this embodiment, the water-oxygen barrier layer 21 can also be a multi-layer structure. For example, the water-oxygen barrier layer 21 can adopt a Ti / Al / Ti three-layer structure, which can further improve the ability of the water-oxygen barrier layer 21 to isolate water and oxygen.

[0068] Specifically, in this embodiment, after the first polyimide layer 13 is fabricated, a water and oxygen barrier material can be formed on the first polyimide layer 13. The water and oxygen barrier material is patterned to form a water and oxygen barrier layer 21. Then, a first inorganic insulating layer 14, a conductive pattern 18, a barrier layer 15, a first insulating layer 16, an active layer pattern 19, a second insulating layer 17, a gate 20, and other film layers are formed in sequence.

[0069] In another specific embodiment, such as Figure 6 As shown, the display substrate of this embodiment includes a substrate and a barrier layer 15, a first insulating layer 16, a second insulating layer 17, and a thin-film transistor located on the substrate. The thin-film transistor includes a gate 20, an active layer pattern 19, and source and drain electrodes (not shown). To achieve a flexible display, the substrate is composed of alternating layers of polyimide and inorganic insulating layers, such as... Figure 6 As shown, the substrate may include a second polyimide layer 11, a second inorganic insulating layer 12, a first polyimide layer 13, and a first inorganic insulating layer 14 stacked sequentially.

[0070] To improve the device characteristics of thin-film transistors, a conductive pattern 18 is formed in the GOA region of the display substrate. The conductive pattern 18 is electrically connected to the gate 20 through a via penetrating the barrier layer 15 and the first insulating layer 16. The conductive pattern 18 is made of a material with good conductivity, such as Mo. The conductive pattern 18 can be made of the same material as the gate 20, or it can be made of a different material. The shape of the conductive pattern 18 can be approximately the same as the shape of the gate 20, and the size of the conductive pattern 18 can also be the same as the size of the gate 20. This allows the conductive pattern 18 to be fabricated using the same mask as the gate 20, saving on the number of masks. Of course, the size of the conductive pattern 18 can also be different from the size of the gate 20. Figure 3 As shown, the conductive pattern 18 serves as one plate of the voltage regulator capacitor CQ, which helps maintain the potential at point Q, that is, maintain the potential of the gate 20 of the thin-film transistor.

[0071] In this embodiment, the display substrate further includes a water and oxygen barrier layer 21 located between the first inorganic insulating layer 14 and the first polyimide layer 13, and a water and oxygen barrier layer 21 located between the first inorganic insulating layer 14 and the conductive pattern 18. The double water and oxygen barrier layer 21 can effectively block water and oxygen, preventing the charge on the conductive pattern 18 from being conducted away by the first polyimide layer 13. The water and oxygen barrier layer can be made of Ti. Ti will quickly oxidize into titanium dioxide when it comes into contact with oxygen in the air or in a humid and hot environment. Titanium dioxide is a very dense and uniform oxide film with good water and oxygen barrier properties. It can effectively block water and oxygen. After the first polyimide layer 13 is corroded by water vapor, the water and oxygen barrier layer 21 can still ensure that the conductive pattern 18 and the first polyimide layer 13 are insulated, preventing the charge on the conductive pattern 18 from being conducted away by the first polyimide layer 13. This allows the voltage regulator formed by the conductive pattern 18 to maintain a stable voltage, prevent leakage abnormalities, and thus improve the stability of the thin film transistor device in high temperature and high humidity operation tests, and reduce the occurrence of defects under high temperature and high humidity operation tests.

[0072] Specifically, a Ti layer can be sputtered on the first polyimide layer 13 to serve as a water and oxygen barrier layer 21, and a Ti layer can be sputtered on the first inorganic insulating layer 14 to serve as a water and oxygen barrier layer 21. When sputtering Ti, oxygen can be introduced into the working environment to accelerate the oxidation of Ti to form titanium dioxide.

[0073] In this embodiment, in order to effectively prevent water and oxygen from invading the conductive pattern 18, the size of the water and oxygen barrier layer 21 is slightly larger than the size of the conductive pattern 18. Specifically, the minimum distance between the boundary of the water and oxygen barrier layer 21 and the boundary of the conductive pattern 18 can be 10-20 micrometers. On the one hand, the water and oxygen barrier layer 21 will not affect the layout of other traces in the GOA area, and on the other hand, the water and oxygen barrier layer 21 can effectively prevent water and oxygen from invading the conductive pattern 18.

[0074] In this embodiment, the thickness of the water and oxygen barrier layer 21 can be 100-400 angstroms. This way, on the one hand, the water and oxygen barrier layer 21 will not significantly increase the thickness of the display substrate, and on the other hand, the water and oxygen barrier layer 21 can effectively prevent water and oxygen from invading the conductive pattern 18.

[0075] In this embodiment, in addition to Ti, the water and oxygen barrier layer 21 can also be made of other materials such as silicon nitride. Silicon nitride can effectively isolate water and oxygen. Furthermore, the barrier layer 15 and inorganic insulating layer in the display substrate are also made of silicon nitride. In this way, the water and oxygen barrier layer 21 can be formed using the process equipment for forming the barrier layer 15 and inorganic insulating layer, without the need for additional process equipment to make the water and oxygen barrier layer 21, which can reduce the difficulty of process implementation.

[0076] In this embodiment, the water and oxygen barrier layer 21 can also be made of amorphous silicon. Amorphous silicon can effectively isolate water and oxygen. The active layer pattern 19 in the display substrate is also made of amorphous silicon. In this way, the water and oxygen barrier layer 21 can be formed using the process equipment for forming the active layer pattern 19. There is no need to add new process equipment to make the water and oxygen barrier layer 21, which can reduce the difficulty of process implementation.

[0077] In this embodiment, the water-oxygen barrier layer 21 can also be a multi-layer structure. For example, the water-oxygen barrier layer 21 can adopt a Ti / Al / Ti three-layer structure, which can further improve the ability of the water-oxygen barrier layer 21 to isolate water and oxygen.

[0078] Specifically, in this embodiment, after fabricating the first polyimide layer 13, a water-oxygen barrier material can be formed on the first polyimide layer 13. The water-oxygen barrier material can be Ti, amorphous silicon, or silicon nitride. The water-oxygen barrier material is patterned to form a water-oxygen barrier layer 21. Then, a first inorganic insulating layer 14 is fabricated, and a water-oxygen barrier material is formed on the first inorganic insulating layer 14. The water-oxygen barrier material is patterned to form a water-oxygen barrier layer 21. The first inorganic insulating layer 14 has a flat surface and good density, making it easier to etch the water-oxygen barrier material on it, forming a water-oxygen barrier layer 21 with good boundary morphology. Then, conductive patterns 18, barrier layers 15, first insulating layers 16, active layer patterns 19, second insulating layers 17, and gate 20 are sequentially formed to obtain the display substrate of this embodiment.

[0079] An embodiment of this utility model also provides a display device, including the display substrate described above.

[0080] The display device includes, but is not limited to, components such as: a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply. Those skilled in the art will understand that the above-described structure of the display device does not constitute a limitation on the display device; the display device may include more or fewer of the aforementioned components, or combine certain components, or arrange different components. In embodiments of this utility model, the display device includes, but is not limited to, a monitor, a mobile phone, a tablet computer, a television set, a wearable electronic device, and a navigation display device.

[0081] The display device can be any product or component with display function, such as a television, monitor, digital photo frame, mobile phone, or tablet computer. The display device also includes a flexible circuit board, a printed circuit board, and a backplate.

[0082] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, since the embodiments are basically similar to the product embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the product embodiments.

[0083] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0084] It is understandable that when a component such as a layer, film, region, or substrate is referred to as being "above" or "below" another component, the component may be "directly" located "above" or "below" the other component, or there may be intermediate components present.

[0085] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0086] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A display substrate, comprising a display area, a gate driving circuit area located at a periphery of the display area, the display substrate comprising a substrate and a thin film transistor located on the substrate, the thin film transistor comprising a gate; characterized in that, The display substrate further includes: A conductive pattern is located in the gate driving circuit region, the conductive pattern is located between the gate and the substrate, an insulating layer is spaced between the conductive pattern and the gate, and the conductive pattern is connected to the gate through a via penetrating the insulating layer; A water-oxygen barrier layer is located on the side of the conductive pattern facing the substrate, and the orthogonal projection of the conductive pattern on the substrate is located within the orthogonal projection of the water-oxygen barrier layer on the substrate.

2. The display substrate of claim 1, wherein, The substrate comprises multiple alternating layers of polyimide and inorganic insulating layers.

3. The display substrate according to claim 2, characterized in that, The substrate includes a first polyimide layer that is closest to the conductive pattern, and the water and oxygen barrier layer is located between the first polyimide layer and the conductive pattern.

4. The display substrate according to claim 3, characterized in that, Along a direction away from the conductive pattern, the substrate includes a first inorganic insulating layer, a first polyimide layer, a second inorganic insulating layer, and a second polyimide layer stacked sequentially.

5. The display substrate according to claim 4, characterized in that, The water and oxygen barrier layer is located between the first polyimide layer and the first inorganic insulating layer; and / or The water-oxygen barrier layer is located between the conductive pattern and the first inorganic insulating layer.

6. The display substrate according to claim 5, characterized in that, When the water-oxygen barrier layer is located between the conductive pattern and the first inorganic insulating layer, the water-oxygen barrier layer is in direct contact with the conductive pattern.

7. The display substrate according to any one of claims 1-6, characterized in that, The water-oxygen barrier layer adopts a single-layer structure, and the single-layer structure is made of Ti, silicon nitride or a-Si.

8. The display substrate according to any one of claims 1-6, characterized in that, The water and oxygen barrier layer adopts a Ti / Al / Ti three-layer structure.

9. The display substrate according to any one of claims 1-6, characterized in that, The thickness of the water-oxygen barrier layer is 100-400 angstroms.

10. A display device, characterized in that, Includes the display substrate as described in claims 1-9.

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