Gas supply passage of a reaction apparatus and semiconductor processing apparatus
By employing multi-layer sealing rings and connecting channels in semiconductor equipment, the layout and sealing performance of the intake pipe are optimized, solving the problem of poor sealing performance and achieving a more stable process environment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- WUXI LEADPRO TECH CO LTD
- Filing Date
- 2025-09-12
- Publication Date
- 2026-08-04
AI Technical Summary
The arrangement and sealing of the air intake pipes in existing semiconductor equipment are not good enough, resulting in poor sealing performance, which affects process stability and causes gas contamination.
It adopts a multi-layer sealing ring structure and a connecting channel design. By setting a connecting channel in the sealed space and utilizing the sealing system of the cover, the air intake pipe can be optimized and the sealing performance can be improved to prevent gas leakage.
It improves the sealing of semiconductor equipment, ensures process stability, prevents gas contamination, and provides a more stable manufacturing environment.
Smart Images
Figure CN224596910U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment technology, and in particular to a gas supply passage for a reaction apparatus and a semiconductor processing device. Background Technology
[0002] In existing technology, the cavity of a semiconductor device is connected to one end of an air inlet pipe, while the other end of the air inlet pipe is connected to an external air source. The external air source inputs gas into the air inlet pipe, and the gas is sent into the cavity, where it reacts. However, current semiconductor devices do not yet have adequate arrangements and sealing for the air inlet pipe. Utility Model Content
[0003] This application provides a gas supply passage for a reaction apparatus and a semiconductor processing device, which can optimize the layout of the gas inlet pipe and improve the sealing performance of the reaction apparatus.
[0004] The first aspect of this application provides a gas supply passage for a reaction apparatus, the reaction apparatus comprising: a cavity having a reaction chamber and an open end communicating with the reaction chamber, the open end having a first end face; a cover being movably disposed relative to the cavity to switch between opening and closing the cavity; when the cavity is in a closed state, the cover is placed on the open end of the cavity to seal the reaction chamber, the cover having a second end face communicating with the first end face; at least two first sealing rings disposed between the first end face and the second end face, the at least two first sealing rings, the first end face and the second end face forming a sealed space; wherein, the gas supply passage includes a first channel disposed in the cavity and a second channel disposed in the cover, when the cavity is in a closed state, the first channel and the second channel are connected to form a communicating channel passing through the sealed space, the communicating channel being used to supply gas to the cover, the communicating channel being sealed relative to the sealed space.
[0005] In one embodiment, the cover is provided with a third channel communicating with the reaction chamber, and the gas supply passage further includes: a first pipe located outside the chamber and communicating the first channel with an external gas source; and a second pipe located outside the cover and communicating the second channel with the third channel.
[0006] In one embodiment, the reaction device includes: at least one second sealing ring located within the sealed space, and the second sealing ring surrounding the interface between the first channel and the second channel, wherein when the cavity is in a closed state, the second sealing ring forms an inner closed space within the sealed space, the inner closed space being not in communication with the sealed space.
[0007] In one embodiment, both the first end face and the second end face are provided with a first guide groove for accommodating the first sealing ring and a second guide groove for accommodating the second sealing ring.
[0008] In one embodiment, the gas supply passage further includes an extraction channel disposed in the cavity and communicating with the sealed space, the extraction channel being used to extract or feed gas into the sealed space.
[0009] In one embodiment, both the air extraction channel and the first channel are disposed in the cavity wall of the cavity, and the air extraction channel is disposed adjacent to the first channel.
[0010] In one embodiment, the thickness of the cavity wall at the location of the first channel is greater than the thickness of the cavity wall at other locations.
[0011] In one embodiment, the cavity is provided with a plurality of first channels, and the cover is provided with a plurality of second channels. The plurality of first channels and the plurality of second channels are connected one-to-one to form a plurality of communicating channels, wherein the plurality of communicating channels are located on the same side of the reaction cavity.
[0012] A second aspect of this application provides a semiconductor processing apparatus, the apparatus including a gas supply passage for a reaction device as described in any of the above embodiments.
[0013] In one embodiment, the device includes: a nozzle located in the reaction chamber of the cavity, the nozzle being fixedly connected to the cover, and the nozzle orifice communicating with the communication channel; and a base located in the reaction chamber of the cavity, the base being connected to the cavity, and the bearing surface of the base being opposite to or perpendicular to the spray surface of the nozzle.
[0014] Unlike existing technologies, the beneficial effects of this application are as follows: The reaction apparatus of this application includes a cavity, a cover, and at least two first sealing rings. By setting a multi-layered structure of first sealing rings, this application effectively prevents gas leakage from the reaction cavity to the external environment and gas leakage from the external environment into the reaction cavity. Furthermore, the connecting channel passing through the sealed space avoids the possibility of gas leakage from the connecting channel due to poor sealing. Simultaneously, the sealing system of the connecting channel is located within the sealing system of the cover, allowing for simultaneous sealing of both the cover and the connecting channel, optimizing the arrangement of the gas inlet pipeline and improving the overall sealing performance of the sealing system. This application, through its multi-layered sealing rings, solves the problems of poor process stability and gas contamination caused by poor sealing in semiconductor equipment, providing more stable environmental conditions for high-precision semiconductor manufacturing. Attached Figure Description
[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:
[0016] Figure 1 This is a schematic diagram of one embodiment of the reaction apparatus of this application;
[0017] Figure 2 yes Figure 1 A schematic diagram of an embodiment where the central cavity and the cover are separated;
[0018] Figure 3 yes Figure 1 A top view of one embodiment of the central cavity;
[0019] Figure 4 yes Figure 1 A partial cross-sectional schematic diagram of the centerline of the connecting pipe;
[0020] Figure 5 yes Figure 4 A schematic diagram of the structure of one embodiment of a local region M in the middle;
[0021] Figure 6 yes Figure 1 A partial cross-sectional view of the centerline of the central exhaust pipe;
[0022] Figure 7 yes Figure 6 A schematic diagram of one embodiment of a local region N.
[0023] Label Explanation:
[0024] 10. Reaction apparatus; 100. Cavity; 200. Cover; 300. First sealing ring; 400. First pipe; 500. Second pipe; 600. Second sealing ring; 700. Fourth pipe; A. Reaction chamber; B. Sealed space; C. Connecting channel; C1. First channel; C2. Second channel; D. Vacuum channel; G1. First guide groove; G2. Second guide groove; S1. First end face; S2. Second end face. Detailed Implementation
[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0026] In view of the problems existing in the above-mentioned background technology, this application provides the following solution based on its research.
[0027] See Figures 1 to 7 , Figure 1 This is a schematic diagram of one embodiment of the reaction apparatus of this application. Figure 2 yes Figure 1 A schematic diagram of one embodiment where the central cavity and the cover are separated. Figure 3 yes Figure 1 A top view of one embodiment of the central cavity. Figure 4 yes Figure 1 A partial cross-sectional view along the centerline of the connecting pipe. Figure 5 yes Figure 4 A schematic diagram of the structure of one embodiment of a local region M in the middle. Figure 6 yes Figure 1 A partial cross-sectional view of the centerline of the central exhaust pipe. Figure 7 yes Figure 6 A schematic diagram of one embodiment of a local region N.
[0028] The first aspect of this application provides a gas supply passage for a reaction device, the reaction device 10 including a cavity 100, a cover 200 and at least two first sealing rings 300. The cavity 100 is provided with a reaction chamber A and an open end communicating with the reaction chamber A, and the open end is provided with a first end face S1; the cover 200 is movably disposed relative to the cavity 100 to switch between opening and closing the cavity 100; when the cavity 100 is in the closed state, the cover 200 covers the open end of the cavity 100 to seal the reaction chamber, and the cover 200 is provided with a second end face S2 that abuts with the first end face S1; at least two first sealing rings 300 are disposed between the first end face S1 and the second end face S2, and the at least two first sealing rings 300, the first end face S1 and the second end face S2 enclose a sealed space B; wherein, the gas supply passage includes a first channel C1 disposed in the cavity 100 and a second channel C2 disposed in the cover 200. When the cavity 100 is in the closed state, the first channel C1 and the second channel C2 abut to form a connecting channel C that passes through the sealed space. The connecting channel C is used to supply gas to the cover 200, and the connecting channel C is sealed relative to the sealed space B.
[0029] Specifically, the cavity 100 has a reaction chamber A for containing reactants. The reaction chamber A has an open end facing the cover 200, and the open end has a first end face S1 that contacts the cover 200. The cover 200 covers the open end and fits against the first end face S1 through its second end face S2. The second end face S2 and the first end face S1 are sealed together by at least two first sealing rings 300. These at least two first sealing rings 300 provide at least two layers of barrier between the reaction chamber A and the external environment, thereby improving the sealing performance of the reaction device 10. The at least two first sealing rings 300, the first end face S1, and the second end face S2 together form an independent sealed space B, which is isolated from the reaction chamber A and the external environment by the first sealing rings 300. The first sealing rings 300 can be made of elastic materials such as rubber, silicone, or Teflon.
[0030] The first channel C1 is located in the cavity 100, and the second channel C2 is located in the cover 200. The first channel C1 and the second channel C2 are connected in the sealed space B to form the entire connecting channel C. The connecting channel C is used to transport gas to the cover 200, and the airflow direction is from the first channel C1 to the second channel C2.
[0031] Unlike existing technologies, the reaction apparatus 10 of this application includes a cavity 100, a cover 200, and at least two first sealing rings 300. This application, by setting a structure with multiple layers of first sealing rings 300, forms a physical barrier that effectively prevents gas leakage from the reaction cavity A to the external environment and gas leakage from the external environment into the reaction cavity A. Furthermore, the connecting channel C, passing through the sealed space B, avoids the possibility of gas leakage from the connecting channel C due to poor sealing. Additionally, by placing the connecting channel C in the sealed space B, the sealing system of the cover 200 and the cavity 100 can be used to simultaneously seal the connecting channel C, optimizing the layout of the gas inlet pipeline while reducing space costs and sealing system costs. This application, through multiple layers of sealing rings, solves the problems of poor process stability and gas contamination caused by poor sealing in semiconductor equipment, providing more stable environmental conditions for high-precision semiconductor manufacturing.
[0032] In one embodiment, the cover 200 is provided with a third channel (not shown) communicating with the reaction chamber A. The gas supply passage also includes a first pipe 400 and a second pipe 500. The first pipe 400 is located outside the chamber 100 and connects the first channel C1 with an external gas source. The second pipe 500 is located outside the cover 200 and connects the second channel C2 with the third channel.
[0033] Specifically, both the first pipe 400 and the second pipe 500 are external solid pipes, and the connecting channel C is an internal channel formed in the cavity 100 and the cover 200. In this embodiment, the two ends of the connecting channel C are connected to the first pipe 400 and the second pipe 500 respectively, and then connected to the third channel through the second pipe 500, thereby sending external gas into the reaction chamber A. The first pipe 400 and the cavity 100 can be integrally welded to improve sealing, or the first pipe 400 and the cavity 100 can be detachably connected for easy assembly and disassembly. The second pipe 500 and the cover 200 can be integrally welded to improve sealing, or the second pipe 500 and the cover 200 can be detachably connected for easy assembly and disassembly. Optionally, the third channel can be located at the center of the cover 200.
[0034] Of course, in some other implementations, the second pipe 500 may not be provided, or the second channel may be directly connected to the third channel.
[0035] In one embodiment, the reaction device 10 includes at least one second sealing ring 600 located within a sealed space B and surrounding the interface between the first channel C1 and the second channel C2. When the cavity 100 is in a closed state, the second sealing ring 600 forms an inner closed space within the sealed space B, which is not in communication with respect to the sealed space B.
[0036] Specifically, when the cavity 100 is in the closed state, the second sealing ring 600 surrounds the interface connecting the first channel C1 and the second channel C2, and the second sealing ring 600 forms an inner closed space, which is completely isolated from the sealed space B. This improves the isolation effect between the sealed space B and the connecting channel C, and prevents gas leakage from the connecting channel C into the sealed space B due to factors such as poor interface connection. Optionally, the number of connecting channels C is the same as the number of second sealing rings 600, that is, each connecting channel C has its own second sealing ring 600 sealing the interface connecting the first channel C1 and the second channel C2, thus improving the sealing performance between each connecting channel C. Optionally, the number of connecting channels C is greater than the number of second sealing rings 600, that is, the interfaces connecting the first channel C1 and the second channel C2 of multiple connecting channels C can be sealed by one second sealing ring 600, thus reducing the number of second sealing rings 600 used.
[0037] In one embodiment, the first end face S1 and the second end face S2 are each provided with a first guide groove G1 for accommodating the first sealing ring 300 and a second guide groove G2 for accommodating the second sealing ring 600.
[0038] Specifically, the first guide groove G1 and the second guide groove G2 facilitate the installation and fixation of the first sealing ring 300 and the second sealing ring 600. Simultaneously, the first guide groove G1 and the second guide groove G2 also serve a limiting function, preventing the first sealing ring 300 and the second sealing ring 600 from sliding on their end faces, thereby ensuring sealing performance. The cross-sectional shape of the first guide groove G1 can be the same as or different from that of the first sealing ring 300. The cross-sectional shape of the second guide groove G2 can be the same as or different from that of the second sealing ring 600. The cross-sectional shapes of the first guide groove G1 and the second guide groove G2 include circular, elliptical, or rectangular shapes, etc.
[0039] In one embodiment, the gas supply passage further includes an extraction channel D disposed in the cavity 100 and communicating with the sealed space B. The extraction channel D is used to extract or feed gas into the sealed space B.
[0040] Specifically, the vacuum channel D, connected to the sealed space B, allows for evacuation of the sealed space B after the cavity 100 is closed. This creates a negative pressure in the sealed space B, meaning that in addition to the weight of the cover 200 itself, the pressure difference between the sealed space B and the external environment further ensures a tighter seal between the cover 200 and the cavity 100, guaranteeing the sealing effect of the sealed space B. Simultaneously, during reactions inside the cavity 100, the vacuum channel D can be continuously used to evacuate the sealed space B, ensuring complete isolation from the outside environment throughout the reaction process. This embodiment can also introduce gas into the sealed space B through the vacuum channel D. When maintenance is required, the sealed space B is difficult to open directly due to its negative pressure. Introducing gas restores the pressure to normal, allowing the cavity 100 to be opened simply by overcoming the weight of the cover 200. It should be noted that, in order to achieve the above-mentioned gas extraction or gas feeding operation, the gas extraction channel D can be connected to the fourth pipe 700, and the fourth pipe 700 can be connected to the gas extraction device and the gas supply device respectively. Different pipe valves are used to control the gas extraction device and the gas supply device respectively.
[0041] In one embodiment, the air extraction channel D and the first channel C1 are both located in the cavity wall of the cavity 100, and the air extraction channel D and the first channel C1 are arranged adjacent to each other.
[0042] Specifically, the advantage of setting the exhaust channel D and the first channel C1 adjacent to each other is that, on the one hand, the pipelines are arranged in one place to facilitate personnel maintenance and management; on the other hand, the exhaust port of the exhaust channel D is near the interface between the first channel C1 and the second channel C2. Once a gas leak occurs in the interface between the first channel C1 and the second channel C2, it will be immediately drawn away through the nearby exhaust channel D, which can prevent the possibility of leakage to the external environment or the reaction chamber A.
[0043] Of course, in one embodiment, the air extraction channel can also be located at a position far from the connecting channel.
[0044] In one embodiment, the cavity wall at the first channel C1 of the cavity 100 is thicker than the cavity wall at other locations.
[0045] Specifically, considering that the reaction chamber A of the reaction device 10 needs to be under negative pressure during the reaction, and for devices under negative pressure, the strength of the cavity wall of the cavity 100 is required to avoid deformation of the cavity wall under negative pressure. Generally speaking, the greater the thickness of the solid part of the cavity wall, the greater its corresponding strength. In order to ensure the strength requirements of different positions of the cavity 100, the thickness of the cavity wall needs to be increased at the position where the first channel C1 is provided to compensate for the insufficient strength of the cavity wall caused by the space occupied by the first channel C1.
[0046] The thickness of the cavity wall at the second channel C2 in the cover 200 is greater than the thickness of the cavity wall at other locations. The principle is the same as in the above-described embodiment.
[0047] In one embodiment, the cavity 100 is provided with a plurality of first channels C1, and the cover 200 is provided with a plurality of second channels C2. The plurality of first channels C1 and the plurality of second channels C2 are connected one by one to form a plurality of connecting channels C, wherein the plurality of connecting channels C are located on the same side of the reaction cavity A.
[0048] Specifically, the centralized arrangement of multiple connecting channels C can reduce the space occupied by the first pipe 400 and the second pipe 500 used to connect the connecting channels C, thereby reducing the overall volume of the reaction device 10. At the same time, for the centralized arrangement of multiple connecting channels C, only one exhaust pipe D needs to be set nearby to ensure airtightness. Compared with the scheme of multiple connecting channels C being set separately and requiring multiple exhaust pipes D respectively, the number of exhaust pipes D can be reduced, thereby reducing the manufacturing cost of the reaction device 10.
[0049] A second aspect of this application also provides a semiconductor processing apparatus, which includes a gas supply passage for the reaction device as described in any of the above embodiments. The specific design of the gas supply passage for the reaction device and the technical effects it achieves can be found in the various embodiments described above, and will not be repeated here.
[0050] In one embodiment, the semiconductor processing device includes a nozzle and a base. The nozzle is located in the reaction chamber A of the cavity 100 and is fixedly connected to the cover 200. The nozzle orifice is connected to the communication channel C. The base is located in the reaction chamber A of the cavity 100 and is connected to the cavity 100. The bearing surface of the base is opposite to or perpendicular to the spraying surface of the nozzle.
[0051] Specifically, the nozzle is fixedly connected to the cover 200, and the spray hole is connected to the connecting channel C to ensure stable gas delivery to the reaction chamber A. The base is connected to the chamber 100, with the bearing surface and the nozzle spray surface arranged opposite or perpendicular to each other, so that the spray range can cover the base surface. The nozzle and cover 200 can be fixed by welding or threaded connection. The nozzle material can be stainless steel or ceramic to adapt to different gas environments. The relative position of the spray surface and the bearing surface can be parallel, or the tilt angle can be adjusted according to process requirements to optimize gas distribution.
[0052] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.
Claims
1. A gas supply passage of a reaction apparatus, characterized by comprising: The reaction apparatus includes: The cavity has a reaction chamber and an open end communicating with the reaction chamber, and the open end has a first end face; A cover body is movably disposed relative to the cavity to switch between opening and closing the cavity; when the cavity is in the closed state, the cover body covers the open end of the cavity to seal the reaction cavity, and the cover body has a second end face that contacts the first end face; At least two first sealing rings are disposed between the first end face and the second end face, and the at least two first sealing rings, the first end face and the second end face surround to form a sealing space; The gas supply passage includes a first channel in the cavity and a second channel in the cover. When the cavity is closed, the first channel and the second channel are connected to form a connecting channel that passes through the sealed space. The connecting channel is used to supply gas to the cover and is sealed relative to the sealed space.
2. The gas supply passage according to claim 1, characterized by The cover is provided with a third channel communicating with the reaction chamber, and the gas supply passage further includes: The first pipe is located outside the cavity and connects the first channel to an external air source; The second pipe is located outside the cover and connects the second channel and the third channel.
3. The gas supply passage according to claim 1, characterized by The reaction apparatus includes: At least one second sealing ring is located within the sealed space, and the second sealing ring surrounds the interface between the first channel and the second channel. When the cavity is in the closed state, the second sealing ring forms an inner closed space within the sealed space, and the inner closed space is not in communication with the sealed space.
4. The gas supply passage according to claim 3, characterized in that, Both the first end face and the second end face are provided with a first guide groove for accommodating the first sealing ring and a second guide groove for accommodating the second sealing ring.
5. The gas supply passage according to claim 1, characterized in that, The gas supply passage also includes an extraction channel located in the cavity and communicating with the sealed space. The extraction channel is used to extract or feed gas into the sealed space.
6. The gas supply passage according to claim 5, characterized in that, Both the air extraction channel and the first channel are located in the cavity wall of the cavity, and the air extraction channel is arranged adjacent to the first channel.
7. The gas supply passage according to claim 1, characterized in that, The thickness of the cavity wall at the first channel is greater than the thickness of the cavity wall at other locations.
8. The gas supply passage according to claim 1, characterized in that, The cavity is provided with multiple first channels, and the cover is provided with multiple second channels. The multiple first channels and the multiple second channels are connected one by one to form multiple connecting channels, wherein the multiple connecting channels are located on the same side of the reaction cavity.
9. A semiconductor processing apparatus, characterized by comprising: The device includes a gas supply passage for the reaction apparatus as described in any one of claims 1 to 8.
10. The apparatus of claim 9, wherein, The device includes: The nozzle is located in the reaction chamber of the cavity, the nozzle is fixedly connected to the cover, and the nozzle orifice is connected to the communication channel; The base is located in the reaction chamber of the cavity, and the base is connected to the cavity. The bearing surface of the base is opposite to or perpendicular to the spray surface of the nozzle.