The invention discloses a
trichlorosilane deep rectification composite
impurity removal process, and belongs to the technical field of
polycrystalline silicon production
raw material purification. According to the process, deep purification of crude
trichlorosilane is achieved through the steps of pre-protection and primary adsorption, directional rectification enrichment of methyl
dichlorosilane narrow fractions, concentration, mixing with
silicon tetrachloride, catalytic reaction rectification conversion,
differential pressure thermal coupling rectification purification, double-tank parallel deep purification,
tail gas treatment and the like. According to the method, the
impurity methyl
dichlorosilane difficult to remove is precisely separated through side extraction, the
impurity methyl
dichlorosilane is converted into a component easy to separate through a catalytic reaction, and the
boron and
phosphorus impurities are deeply removed in combination with
differential pressure thermal coupling energy saving and double-tank alternate adsorption. The process can efficiently remove
moisture, metals and key impurities
boron and
phosphorus, obviously improves the purity of the
trichlorosilane product, realizes gradient utilization of energy and
hydrogen circulation, and has the advantages of high purity, low
energy consumption and
continuous production.