A packaging frame and an intelligent power module

Abstract

The application discloses a packaging frame and an intelligent power module, and relates to the technical field of semiconductor packaging. The packaging frame comprises a body, four base islands which are arranged at intervals in the body, wherein the base islands comprise a first base island and a second base island which are used for carrying power switch chips, a third base island which is used for carrying a driving control chip, and a fourth base island which is used for carrying an auxiliary function chip; and each base island is connected with a pin which is led out of the body. The packaging frame significantly improves the integration degree, reduces the packaging volume and the heat dissipation thermal resistance, and further improves the reliability and safety of the packaging.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, and more specifically, to a packaging framework and a smart power module. Background Technology

[0002] Semiconductor packaging is a crucial step in mounting, sealing, and protecting integrated circuit chips, and enabling their electrical connection to external circuits. As power semiconductor technology advances towards higher frequencies, higher voltages, and higher power densities, higher demands are placed on the heat dissipation performance, parasitic parameters, reliability, and cost of packaging.

[0003] Currently, medium and low voltage power devices commonly use TO series packages. This package typically uses a single leadframe base island to carry the chip, and connects to an external printed circuit board via multiple thin pins for through-hole or surface mounting. However, when applied to three-phase intelligent power modules, multiple discrete TO devices need to be soldered in parallel onto the PCB, resulting in a bulky module with high thermal resistance, thus reducing system efficiency and reliability. Furthermore, the large parasitic inductance of the package causes switching voltage overshoot and electromagnetic interference; the complex interconnect wiring is not only costly but also poses risks such as pin deformation and breakdown, making it difficult to meet the application requirements of next-generation intelligent power modules. Utility Model Content

[0004] The purpose of this invention is to provide a packaging frame and a smart power module, which can significantly improve integration, reduce packaging volume and heat dissipation resistance by setting multiple base islands, thereby improving the reliability and safety of the packaging.

[0005] The embodiments of this utility model are implemented as follows: In one aspect, this utility model provides a packaging frame, including a body and four base islands spaced apart within the body. Each base island includes a first base island and a second base island for carrying a power switch chip, a third base island for carrying a drive control chip, and a fourth base island for carrying an auxiliary function chip. Each base island is connected to pins extending out of the body.

[0006] Optionally, at least one base island is attached to the bottom or top surface of the body, so that the side of the base island facing away from the chip carrier surface is exposed to the body, in order to guide the heat of the chip carrier surface.

[0007] Optionally, the edge of the base island exposed on the body has an arc angle, which is located on the side closer to the adjacent base island.

[0008] Optionally, the bearing surfaces of at least two base islands are at different heights.

[0009] Optionally, the sidewall of the base island has a connecting portion for connecting with a pin; the sidewall of the connecting portion and the sidewall of the base island have an angle of 45 degrees to 80 degrees.

[0010] Optionally, the side edge of the base island is provided with a connecting rib, and the side of the connecting rib away from the base island is connected to the main body.

[0011] In another aspect, this utility model provides an intelligent power module, including a package, a first power switch chip, a second power switch chip, a drive control chip, an auxiliary function chip, and a package frame; the first power switch chip is disposed on a first base island of the package frame, the second power switch chip is disposed on a second base island of the package frame, the drive control chip is disposed on a third base island of the package frame, and the auxiliary function chip is disposed on a fourth base island of the package frame, wherein the first power switch chip, the second power switch chip, the drive control chip, and the auxiliary function chip are electrically interconnected by wire bonding; the package frame is disposed within the package.

[0012] Optionally, both the first power switch chip and the second power switch chip are field-stop type IGBT chips; the intelligent power module also includes fast recovery diode chips respectively disposed on the first base island and the second base island, the fast recovery diode chips and the field-stop type IGBT chips are connected in parallel on the same base island and achieve common potential connection.

[0013] Optionally, the first power switch chip and / or the second power switch chip are cascaded structures, the cascaded structure including a depletion-mode high-voltage transistor chip and an enhancement-mode low-voltage transistor chip connected in series, the enhancement-mode low-voltage transistor chip being stacked on the surface of the depletion-mode high-voltage transistor chip.

[0014] Optionally, the first power switch chip and the second power switch chip are reverse-conducting IGBT chips, or gallium nitride high electron mobility transistor chips, or silicon carbide vertical double-diffused field-effect transistor chips, or silicon-based fast recovery planar MOS chips.

[0015] Optionally, when the first power switch chip and the second power switch chip are gallium nitride high electron mobility transistor chips or silicon carbide vertical double-diffused field-effect transistor chips, a ceramic substrate is disposed on the first base island and / or the second base island. The ceramic substrate includes a substrate body and a conductive layer stacked on the surface of the substrate body. A fast recovery diode chip or a silicon carbide Schottky barrier diode chip is disposed on the ceramic substrate, and the fast recovery diode chip or the silicon carbide Schottky barrier diode chip is connected in parallel with the power switch chip disposed on the same base island.

[0016] Optionally, at least one base island is attached to the bottom or top surface of the package, such that the side of the base island facing away from the chip carrier surface is exposed to the package to guide the heat from the chip carrier surface.

[0017] The beneficial effects of this utility model include at least one of the following: This application provides a packaging framework including a body and four base islands spaced apart within the body. Each base island includes a first and a second base island for carrying a power switching chip, a third base island for carrying a drive control chip, and a fourth base island for carrying an auxiliary function chip. Each base island is connected to pins extending out of the body. This packaging framework, through the integrated design of the four base islands, allows for the partitioned carrying of multiple types of chips within the same packaging framework, eliminating the need for multiple independent TO devices to be distributed as in traditional TO packaging. This significantly improves packaging integration and reduces package size. Because the four base islands are spaced apart, direct heat conduction and superposition between different chips are avoided, reducing local hot spots. Furthermore, the spacing provides space for the flow of heat dissipation medium, reducing thermal resistance and significantly improving heat dissipation efficiency. Additionally, the chips carried on each base island are electrically independent, reducing electromagnetic interference between different functional chips. Simultaneously, it avoids the current imbalance problem caused by differences in wiring distance when traditional discrete devices are connected in parallel, reducing the risk of pin deformation and breakdown. The aforementioned packaging framework significantly improves integration, reduces package size and thermal resistance, thereby improving the reliability and safety of the package.

[0018] This application also provides an intelligent power module, including a package, a first power switch chip, a second power switch chip, a drive control chip, an auxiliary function chip, and a package frame. The first power switch chip is disposed on a first base island of the package frame, the second power switch chip is disposed on a second base island of the package frame, the drive control chip is disposed on a third base island of the package frame, and the auxiliary function chip is disposed on a fourth base island of the package frame. The first power switch chip, the second power switch chip, the drive control chip, and the auxiliary function chip are electrically interconnected through wire bonding. The package frame is disposed within the package. The first power switch chip carries the upper arm power switch of the half-bridge, and the second power switch chip carries the lower arm power switch, realizing the core integration of the half-bridge power circuit. The drive control chip on the third base island is specifically adapted to the half-bridge drive requirements, such as controlling the conduction and switching of the upper and lower arm power switches. The auxiliary function chip on the fourth base island, such as an ESD protection chip, is used to solve the electrostatic discharge protection problem during high-frequency switching of the half-bridge. The application proposes a three-phase intelligent power module that utilizes three independent, standard half-bridge circuits connected in parallel to drive a three-phase motor. The first and second power switch chips can be combined in various ways, improving integration, reducing package size, and providing flexible power device selection to meet the needs of different application scenarios. These components—an upper bridge power switch on the first island, a lower bridge power switch on the second island, a driver chip on the third island, and a protection chip on the fourth island—form a complete and independent functional unit. This allows for the placement of the upper bridge power switch on the first island and the lower bridge power switch on the second island, with the third island housing the driver chip and the fourth island housing the protection chip. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 One of the structural schematic diagrams of the packaging frame provided in the embodiment of this utility model; Figure 2 A second schematic diagram of the packaging frame provided in this embodiment of the utility model; Figure 3 The third schematic diagram of the packaging frame provided in the embodiment of this utility model; Figure 4 One of the structural schematic diagrams of the intelligent power module provided in the embodiment of this utility model; Figure 5A second schematic diagram of the structure of the intelligent power module provided in this embodiment of the utility model; Figure 6 The third schematic diagram of the structure of the intelligent power module provided in the embodiment of this utility model; Figure 7 The fourth schematic diagram of the structure of the intelligent power module provided in the embodiment of this utility model.

[0021] Icons: 100-Package frame; 110-Body; 120-First base island; 130-Second base island; 140-Third base island; 150-Fourth base island; 160-Pin; 170-Connecting rib; 200-Smart power module; 201-Package body; 202-Lead; 210-First power switch chip; 220-Second power switch chip; 230-Drive control chip; 240-Auxiliary function chip; 250-Field cutoff IGBT chip; 260-Fast recovery diode chip; 270-Depletion-mode high-voltage transistor chip; 280-High-mode low-voltage transistor chip; 290-Reverse-conducting IGBT chip; 291-Gallium nitride high electron mobility transistor chip; 293-Ceramic substrate. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0024] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0025] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0026] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0027] Please refer to Figure 1 This embodiment provides a packaging frame 100, including a body 110 and four base islands spaced apart within the body 110. The base islands include a first base island 120 and a second base island 130 for carrying a power switch chip, a third base island 140 for carrying a drive control chip 230, and a fourth base island 150 for carrying an auxiliary function chip 240. Each base island is connected to a pin 160 extending out of the body 110.

[0028] Specifically, the length of the first base island 120, the second base island 130, the third base island 140, and the fourth base island 150 is 2mm~6mm, the width is 1mm~5mm, and the depth is 0.1mm~1.1mm. If the dimensions are smaller than these, the chip cannot be stably fixed, and the bonding wires 202 are prone to interference with the edges of the base islands, leading to electrical connection failure. It should be noted that the length and width dimensions of the first base island 120, the second base island 130, the third base island 140, and the fourth base island 150 can be adjusted according to actual needs.

[0029] like Figure 1As shown, in one specific embodiment of this application, the fourth base island 150 is disposed between the first base island 120 and the second base island 130, and the third base island 140 is disposed on top of the first base island 120, the second base island 130 and the fourth base island 150. Since the power switching chips on the first base island 120 and the second base island 130 are the main heat sources of the packaging frame 100, while the auxiliary function chip 240 carried on the fourth base island 150 has a lower heat generation, placing it between the two power base islands can avoid the direct superposition of heat from the two power chips to form a heat concentration area, thereby reducing the thermal resistance. The core function of the drive control chip 230 carried on the third base island 140 is to output drive signals to the power switching chips on the first base island 120 and the second base island 130 to control their conduction and turn-off. Placing the third base island 140 on top of the first base island 120, the second base island 130 and the fourth base island 150 can minimize the distance between the drive chip, the power switching chip and the auxiliary function chip 240, greatly reduce the transmission delay of the drive signal and improve the switching response speed of the power chip.

[0030] Each base island is connected to a pin 160 extending outside the body 110. A safety gap is provided between the pins 160 of each base island to reduce the risk of breakdown due to voltage differences between the pins 160. The width of the safety gap is 0.5-1 mm. Preferably, the pins 160 are made of a metal material with high thermal conductivity, such as copper. The ends of the pins 160 have a rectangular structure for easy connection to external circuits.

[0031] This packaging framework 100, through its integrated design of four base islands, allows for the partitioned mounting of multiple types of chips within a single framework 100. This eliminates the need for multiple independent TO devices, as required by traditional TO packaging, significantly improving packaging integration and reducing the package volume 201. The spaced-apart base islands prevent direct heat conduction and accumulation between different chips, reducing localized hotspots. Furthermore, the spacing provides space for the flow of heat dissipation media, reducing thermal resistance and significantly improving heat dissipation efficiency. Additionally, the chips mounted on each base island are electrically independent, reducing electromagnetic interference between chips with different functions. Simultaneously, it avoids the current imbalance caused by differences in wiring distance when traditional discrete devices are connected in parallel, reducing the risk of pin deformation and breakdown. The aforementioned packaging framework 100 significantly improves integration, reduces the package volume 201, and decreases thermal resistance, thereby enhancing packaging reliability and safety.

[0032] Optionally, such as Figure 2 and Figure 3 As shown, at least one base island is attached to the bottom or top surface of the body 110, so that the side of the base island facing away from the chip carrier surface is exposed to the body 110, in order to guide the heat of the chip carrier surface.

[0033] Specifically, in the actual fabrication process of the packaging frame 100, such as Figure 2 As shown, at least a portion of the base island is recessed from top to bottom, so that the side of the base island facing away from the bearing surface is attached to the bottom surface. Furthermore, the recessing process causes the side of the base island facing away from the bearing surface to penetrate the surface of the encapsulation frame 100 body 110, forming an exposed area that directly contacts the external environment, thereby improving heat dissipation efficiency. In another possible embodiment of this application, as... Figure 3 As shown, at least a portion of the base island can be recessed from bottom to top to mount the base island onto the top surface of the body 110, and the chip can be flip-chip mounted on the side of the base island away from the top surface.

[0034] This application does not impose any limitation on the number of base islands exposed on the body 110. Since the power switch chips on the first base island 120 and the second base island 130 are the main heat sources of the packaging frame 100, preferably, the side of the first base island 120 and / or the second base island 130 facing away from the bearing surface is exposed on the body 110.

[0035] In the intelligent power module 200, the chips carried by adjacent base islands often have a high operating voltage difference. If the exposed edges adopt a right-angle design, the creepage distance of the exposed surfaces of adjacent base islands is only the straight-line distance between them, which is prone to surface discharge breakdown.

[0036] To address this technical issue, the edge of the exposed side of the base island on the body 110 has a rounded corner, located on the side closest to the adjacent base island. Preferably, the rounded corner radius is 0.5~1mm. By setting the rounded corner, the creepage path can extend along the rounded corner surface, thereby increasing the creepage distance and improving safety and reliability. Furthermore, the rounded corner design allows for a more uniform electric field distribution, effectively suppressing partial discharge and improving impact resistance compared to right-angled edges, thus enhancing the stability of the packaging frame 100.

[0037] Optionally, the bearing surfaces of at least two base islands are at different heights. Specifically, such as... Figure 3 As shown, the carrier surfaces of the second base island 130, the fourth base island 150, and the first base island 120 used to place the chip have a height difference in the vertical direction relative to the plane of the body 110 of the packaging frame 100, so that the second base island 130, the fourth base island 150, and the first base island 120 are distributed in a gradient, which further improves the heat dissipation efficiency.

[0038] Optionally, the sidewall of the base island has a connecting portion for connecting with pin 160; the sidewall of the connecting portion and the sidewall of the base island have an angle of 45 degrees to 80 degrees.

[0039] Specifically, the connecting portion is a transition structure between the base island and the pin 160, consisting of a metal extension integrally formed with the sidewall of the base island. One end of the extension portion connects to the sidewall of the base island, and the other end is fixed to the pin 160. The sidewall of the connecting portion along its extension direction forms an angle of 45 to 80 degrees with the horizontal sidewall of the base island to buffer stress impacts during encapsulation and soldering, thereby improving the structural reliability of the encapsulation frame 100.

[0040] Optionally, such as Figure 1 As shown, a connecting rib 170 is provided on the side edge of the base island, and the side of the connecting rib 170 away from the base island is connected to the main body 110.

[0041] Specifically, the connecting rib 170 is a strip-shaped metal structure. In one specific embodiment of this application, the thickness of the connecting rib 170 is 0.2-0.3 mm, thereby providing support for the base island and distributing external forces to the frame body 110, thus improving the stress balance of the base island. Preferably, the sidewall of the connecting rib 170 along its extension direction has an angle of 45 degrees to 80 degrees with the horizontal sidewall of the base island, in order to buffer the stress impact during encapsulation and welding, and further improve the structural reliability of the encapsulation frame 100.

[0042] Another aspect of this utility model, such as Figure 4 As shown, a smart power module 200 is provided, including a package 201, a first power switch chip 210, a second power switch chip 220, a drive control chip 230, an auxiliary function chip 240, and a package frame 100. The first power switch chip 210 is disposed on a first base island 120 of the package frame 100, the second power switch chip 220 is disposed on a second base island 130 of the package frame 100, the drive control chip 230 is disposed on a third base island 140 of the package frame 100, and the auxiliary function chip 240 is disposed on a fourth base island 150 of the package frame 100. The first power switch chip 210, the second power switch chip 220, the drive control chip 230, and the auxiliary function chip 240 are electrically interconnected by bonding wires 202. The package frame 100 is disposed within the package 201.

[0043] Specifically, such as Figure 4 As shown, the first power switch chip 210 carries the upper arm power switch of the half-bridge, and the second power switch chip 220 carries the lower arm power switch, realizing the core integration of the half-bridge power circuit; the third base island 140's drive control chip 230 is specially adapted to the half-bridge drive requirements, such as controlling the conduction and switching of the upper and lower arm power switches; the fourth base island 150's auxiliary function chip 240, such as an ESD protection chip, is used to solve the electrostatic protection problem during high-frequency switching of the half-bridge.

[0044] The traditional three-phase intelligent power module 200 contains three bridge arms, each with two power switches (upper and lower), totaling six power chips. In addition, it integrates three driver chips and one main control chip, resulting in a larger module size, higher thermal resistance, and increased production costs.

[0045] This application utilizes a first island 120 with an upper bridge arm power switch, a second island 130 with a lower bridge arm power switch, a third island 140 for a driver chip, and a fourth island 150 for a protection chip. These elements combine to form a half-bridge circuit and its driving and protection circuits, creating a complete and independent functional unit. Compared to traditional three-phase intelligent power modules 200, this application can drive a three-phase motor by combining three independent, standard half-bridge circuits in parallel. The first power switch chip 210 and the second power switch chip 220 can be combined in various ways, improving integration, reducing the package size, and providing flexible power device selection to meet the needs of different application scenarios.

[0046] Optionally, such as Figure 5 As shown, the first power switch chip 210 and the second power switch chip 220 are both field-stop type IGBT chips 250; the intelligent power module 200 also includes a fast recovery diode chip 260 respectively disposed on the first base island 120 and the second base island 130. The fast recovery diode chip 260 and the field-stop type IGBT chip 250 are connected in parallel on the same base island and achieve common potential connection.

[0047] Specifically, such as Figure 5 As shown, the four-base-island framework encapsulates six chips, forming a complete half-bridge intelligent power module 200. In one specific embodiment of this application, the upper bridge arm field-stop IGBT chip 250 and the fast recovery diode chip 260 connected in parallel are supported on the metal surface of the first base island 120 by conductive adhesive; the lower bridge arm field-stop IGBT chip 250 and the fast recovery diode chip 260 connected in parallel are supported on the metal surface of the second base island 130 by conductive adhesive; the third base island 140 supports the half-bridge driver chip, and the fourth base island 150 supports the auxiliary function chip 240.

[0048] Among them, the cutoff-type IGBT chip excels at forward conduction of large currents, especially in medium and high voltage applications, where its forward voltage is low and its efficiency is high; while the fast recovery diode chip 260 excels at reverse freewheeling. When the IGBT is turned off, the inductive load in the circuit will generate reverse current, and the fast recovery diode chip 260 can protect the IGBT from high voltage breakdown.

[0049] Optionally, such as Figure 7As shown, the first power switch chip 210 and / or the second power switch chip 220 are cascaded structures. The cascaded structure includes a depletion-type high-voltage transistor chip 270 and an enhancement-type low-voltage transistor chip 280 connected in series. The enhancement-type low-voltage transistor chip 280 is stacked on the surface of the depletion-type high-voltage transistor chip 270.

[0050] Specifically, such as Figure 7 As shown, the four-base island frame encapsulates six chips. The first base island 120 carries an upper bridge arm power switch consisting of a high-voltage chip and a low-voltage chip stacked together; the second base island 130 carries a lower bridge arm power switch consisting of a high-voltage chip and a low-voltage chip stacked together.

[0051] The cascaded structure includes a depletion-mode high-voltage transistor chip 270 and an enhancement-mode low-voltage transistor chip 280 connected in series. Since the enhancement-mode low-voltage transistor chip 280 is enhancement-mode, it can be directly controlled by a low-voltage drive circuit. The conduction and cutoff of the enhancement-mode low-voltage transistor chip 280 can directly control the source potential of the series-connected depletion-mode high-voltage transistor chip 270, thereby indirectly and very quickly controlling the on / off of the entire cascaded branch. This simplifies the driving of the intelligent functional module and reduces system costs.

[0052] Optionally, such as Figure 6 As shown, the first power switch chip 210 and the second power switch chip 220 are either reverse-conducting IGBT chips 290, gallium nitride high electron mobility transistor chips 291, silicon carbide vertical double-diffused field-effect transistor chips, or silicon-based fast recovery planar MOS chips.

[0053] Among them, the reverse-conducting IGBT chip 290 integrates the function of the fast recovery diode chip 260, thus eliminating the need for the fast recovery diode chip 260. Similarly, the gallium nitride high electron mobility transistor chip 291 has a physical structure that enables reverse conduction, and thus, the fast recovery diode chip 260 can be omitted. The silicon carbide vertical double-diffused field-effect transistor chip or the silicon-based fast recovery planar MOS chip has similar characteristics to gallium nitride; its own body diode has a certain reverse freewheeling capability. Likewise, in some less demanding applications, a single chip of this type can replace the combination of a cutoff IGBT chip and the fast recovery diode chip 260.

[0054] With this configuration, only 4 chips are needed to achieve the functions of the aforementioned 6 chips, saving the size of the intelligent power module 200, eliminating some wiring, greatly reducing parasitic inductance and resistance, and improving the reliability of the intelligent power module 200.

[0055] Optionally, such as Figure 7 As shown, when the first power switch chip 210 and the second power switch chip 220 are gallium nitride high electron mobility transistor chips 291 or silicon carbide vertical double-diffused field-effect transistor chips, a ceramic substrate 293 is disposed on the first base island 120 and / or the second base island 130. The ceramic substrate 293 includes a substrate body 110 and a conductive layer stacked on the surface of the substrate body 110. A fast recovery diode chip 260 or a silicon carbide Schottky barrier diode chip is disposed on the ceramic substrate 293. The fast recovery diode chip 260 or the silicon carbide Schottky barrier diode chip is connected in parallel with the power switch chip disposed on the same base island.

[0056] Specifically, due to the poor reverse conductivity of the gallium nitride high electron mobility transistor chip 291 and the silicon carbide vertical double-diffused field-effect transistor chip, a large amount of heat is generated during conduction, reducing the system power of the smart power module 200. To solve this problem, in one specific embodiment of this application, such as Figure 7 As shown, a ceramic substrate 293 is disposed on the first base island 120 and the second base island 130. The ceramic substrate 293 includes a substrate body 110 and a conductive layer (such as a copper plate) stacked on the surface of the substrate body 110.

[0057] The ceramic substrate 293 allows the fast recovery diode chip 260 or silicon carbide Schottky barrier diode chip disposed thereon to be electrically insulated from the base island surface and to conduct heat, thus improving heat dissipation efficiency. The fast recovery diode chip 260 or silicon carbide Schottky barrier diode chip also ensures that freewheeling current preferentially flows through it, directly reducing energy loss during freewheeling, improving overall efficiency and extending the lifespan of the intelligent power module 200.

[0058] Of course, in addition to the above methods, low-voltage switching devices and protection devices can also be integrated on the fourth base island 150, and the fast recovery diode chip 260 or silicon carbide Schottky barrier diode chip on the first base island 120 or the second base island 130 can be electrically connected to the fourth base island 150. The low-voltage switching devices can receive control signals from the driver chip and achieve reliable and fast driving of high-voltage devices. The protection devices can be used to protect against electrostatic discharge and electrical overstress.

[0059] Because the low-voltage switching device is located on the fourth base island 150, which is spaced apart from the first base island 120, it is physically isolated from the high-voltage device. Therefore, this arrangement eliminates the need for a ceramic substrate 293 located on the surface of the first base island 120 or the second base island 130, thereby reducing production costs.

[0060] Optionally, such as Figure 2 and Figure 3 As shown, at least one base island is attached to the bottom or top surface of the package 201, so that the side of the base island facing away from the chip carrier surface is exposed to the package 201 to guide the heat of the chip carrier surface.

[0061] Specifically, in the actual fabrication process of the intelligent power module 200, at least a portion of the base island is recessed from top to bottom. After encapsulating the package 201, the side of the base island facing away from the support surface is attached to the bottom surface of the package 201. Furthermore, the recessing process causes the side of the base island facing away from the support surface to break through the surface of the package 201, forming an exposed area that directly contacts the external environment, thereby improving heat dissipation efficiency. In another possible embodiment of this application, at least a portion of the base island can also be recessed from bottom to top, causing the base island to be attached to the top surface of the package 201, and the chip can be flip-chip mounted on the side of the package 201 facing away from the top surface.

[0062] This application does not impose any limitation on the number of base islands exposed on the body 110. Since the power switch chips on the first base island 120 and the second base island 130 are the main heat sources of the package frame 100, preferably, the side of the first base island 120 and / or the second base island 130 facing away from the bearing surface is exposed on the package body 201.

[0063] The above description is merely an optional embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

[0064] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable way without contradiction. In order to avoid unnecessary repetition, this utility model will not describe the various possible combinations separately.

Claims

1. A packaging framework, characterized in that, The device includes a main body and four base islands spaced apart within the main body. Each base island includes a first base island and a second base island for carrying a power switch chip, a third base island for carrying a drive control chip, and a fourth base island for carrying an auxiliary function chip. Each base island is connected to a pin extending out of the main body.

2. The packaging frame according to claim 1, characterized in that, At least one of the base islands is attached to the bottom or top surface of the body, such that the side of the base island facing away from the chip carrier surface is exposed to the body, for guiding the heat of the chip carrier surface.

3. The packaging frame according to claim 2, characterized in that, The edge of the base island exposed on the body has an arc angle, which is located on the side close to the adjacent base island.

4. The packaging frame according to claim 1, characterized in that, At least two of the base islands have bearing surfaces at different heights.

5. The packaging frame according to any one of claims 1 to 3, characterized in that, The sidewall of the base island has a connecting portion for connecting to a pin; the sidewall of the connecting portion and the sidewall of the base island have an angle of 45 degrees to 80 degrees.

6. The packaging frame according to any one of claims 1 to 3, characterized in that, The base island is provided with a connecting rib on its side edge, and the side of the connecting rib away from the base island is connected to the main body.

7. A smart power module, characterized in that, The package includes a package body, a first power switch chip, a second power switch chip, a drive control chip, an auxiliary function chip, and a package frame as described in any one of claims 1-6; the first power switch chip is disposed on a first base island of the package frame, the second power switch chip is disposed on a second base island of the package frame, the drive control chip is disposed on a third base island of the package frame, and the auxiliary function chip is disposed on a fourth base island of the package frame, wherein the first power switch chip, the second power switch chip, the drive control chip, and the auxiliary function chip are electrically interconnected by wire bonding; the package frame is disposed within the package body.

8. The intelligent power module according to claim 7, characterized in that, Both the first power switch chip and the second power switch chip are field-off IGBT chips; the intelligent power module also includes fast recovery diode chips respectively disposed on the first base island and the second base island, the fast recovery diode chips and the field-off IGBT chips are connected in parallel on the same base island and achieve common potential connection.

9. The intelligent power module according to claim 7, characterized in that, The first power switch chip and / or the second power switch chip are cascaded structures. The cascaded structure includes a depletion-type high-voltage transistor chip and an enhancement-type low-voltage transistor chip connected in series. The enhancement-type low-voltage transistor chip is stacked on the surface of the depletion-type high-voltage transistor chip.

10. The intelligent power module according to claim 7, characterized in that, The first power switch chip and the second power switch chip are reverse-conducting IGBT chips, or gallium nitride high electron mobility transistor chips, or silicon carbide vertical double-diffused field-effect transistor chips, or silicon-based fast recovery planar MOS chips.

11. The intelligent power module according to claim 10, characterized in that, When the first power switch chip and the second power switch chip are gallium nitride high electron mobility transistor chips or silicon carbide vertical double-diffused field-effect transistor chips, a ceramic substrate is disposed on the first base island and / or the second base island. The ceramic substrate includes a substrate body and a conductive layer stacked on the surface of the substrate body. A fast recovery diode chip or a silicon carbide Schottky barrier diode chip is disposed on the ceramic substrate, and the fast recovery diode chip or silicon carbide Schottky barrier diode chip is connected in parallel with the power switch chip disposed on the same base island.

12. The intelligent power module according to claim 10, characterized in that, At least one of the base islands is attached to the bottom or top surface of the package, such that the side of the base island facing away from the chip carrier surface is exposed to the package, for guiding the heat of the chip carrier surface.

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