Cluster beam mass selector, screening device and deposition apparatus

Abstract

The application provides a cluster beam mass selector, a screening device and a deposition equipment. The cluster beam mass selector comprises a first electrode plate, a second electrode plate, a third electrode plate and a fourth electrode plate which are sequentially stacked and insulated and separated. A slit is arranged between the first electrode plate and the second electrode plate, one end of the slit forms an inlet, the other end forms a first outlet, a second outlet is arranged between the third electrode plate and the fourth electrode plate, and the second outlet is arranged at the end of the cluster beam mass selector far from the inlet. The first electrode plate and the second electrode plate are used for forming an acceleration electric field, the acceleration direction of the acceleration electric field is perpendicular to the extension direction of the slit, and the acceleration direction is towards the fourth electrode plate; the third electrode plate and the fourth electrode plate are used for forming a deceleration electric field, and the electric field direction of the deceleration electric field is opposite to the electric field direction of the acceleration electric field. The cluster beam mass selector, the screening device and the deposition equipment provided by the application have the advantages of high selection precision and small cluster beam loss.

Description

Technical Field

[0001] This application relates to the field of materials preparation technology, and in particular to a cluster beam quality selector, screening device and deposition equipment. Background Technology

[0002] Due to quantum size effects and the close relationship between physicochemical properties and the number of outer valence electrons, atomic clusters with different numbers of atoms often exhibit very different and unique properties, making them applicable to various fields. After generating a cluster beam, it needs to undergo steps such as transport, mass selection, deposition, and collection to realize its application. Mass selection typically uses a mass selector; however, traditional cluster beam mass selectors have low selection accuracy and cannot effectively separate cluster beams of different masses, resulting in poor cluster beam deposition effects. Furthermore, these devices are large in size, have high cluster beam losses, and low transmission efficiency. Summary of the Invention

[0003] Based on this, this application provides a cluster beam quality selector, a screening device, and a deposition equipment to improve the problems of low selection accuracy and high cluster beam loss in the prior art.

[0004] To achieve the above objectives, the technical solution of this application embodiment is implemented as follows: In a first aspect, embodiments of this application provide a cluster beam quality selector, comprising a first electrode plate, a second electrode plate, a third electrode plate, and a fourth electrode plate that are stacked sequentially and insulated from each other; A slit is provided between the first electrode plate and the second electrode plate, with one end of the slit forming an inlet and the other end forming a first outlet. A second outlet is provided between the third electrode plate and the fourth electrode plate, with the second outlet located at the end of the cluster beam quality selector away from the inlet. The first and second plates are used to form an accelerating electric field, the acceleration direction of which is perpendicular to the extension direction of the slit and toward the fourth plate; the third and fourth plates are used to form a decelerating electric field, the electric field direction of which is opposite to that of the accelerating electric field.

[0005] In one embodiment, a voltage-stabilizing plate is further provided between the second plate and the third plate, and the number of voltage-stabilizing plates is at least one. The area between the second plate and the third plate is used to form a uniform velocity region.

[0006] In one embodiment, a positive high-voltage pulse source is provided on the first electrode plate, which is used to generate a positive high-voltage pulse between the first electrode plate and the second electrode plate; a reverse high-voltage pulse source is provided on the fourth electrode plate, which is used to generate a reverse high-voltage pulse between the third electrode plate and the fourth electrode plate.

[0007] In one embodiment, the cluster beam quality selector further includes a power supply device for applying voltages to the first electrode plate, the second electrode plate, the third electrode plate, the fourth electrode plate, and the voltage regulator electrode plate, respectively, so that the accelerating electric field is formed between the first electrode plate and the second electrode plate, the decelerating electric field is formed between the third electrode plate and the fourth electrode plate, and the uniform velocity region is formed between the second electrode plate and the third electrode plate.

[0008] In one embodiment, a metal mesh is provided on the second electrode plate and / or the third electrode plate, the metal mesh being arranged along the extension direction of the slit, the metal mesh being used to balance the electric field.

[0009] In one embodiment, the cluster beam quality selector has mounting structures at one end with an inlet and at the other end with a first outlet, the mounting structures being used to mount and fix to adjacent components.

[0010] Secondly, this application also provides a cluster beam screening device, including the cluster beam quality selector as described above, and further including a cluster beam generation device, a screening component, an ion optical introduction device and an ion optical extraction device arranged sequentially. The cluster beam quality selector is located between the ion optical introduction device and the ion optical extraction device, and one end of the selector having the inlet is located close to the ion optical introduction device.

[0011] In one embodiment, the screening component includes a differential pumping system or a separation cone, and the end of the screening component near the cluster beam generating device is provided with a screening inlet, which is a circular hole with an adjustable diameter. The screening inlet is used to control the beam radius by adjusting the size of the hole.

[0012] In one embodiment, the ion optical introduction device includes at least one set of electrostatic single lenses and an annular electrode, wherein the at least one set of electrostatic single lenses is sequentially disposed on the side of the annular electrode close to the screening component; The ion optical extraction device includes at least one set of extraction electrostatic single lenses.

[0013] Thirdly, embodiments of this application provide a deposition apparatus, including the cluster beam screening device as described above, and a substrate disposed at the extraction outlet of the ion optical extraction device, wherein a substrate electrode plate for applying voltage is provided on the substrate.

[0014] This application has at least the following beneficial effects: The cluster beam mass selector provided by this application applies an electric field force to the cluster beam entering the mass selector through multiple superimposed electrodes. When the cluster beam just enters the mass selector, an accelerating electric field applies an electric field force to the cluster beam, the direction of which is perpendicular to the initial flight direction of the cluster beam. While the cluster beam continues to fly along its original flight direction, it is accelerated towards the fourth electrode by the electric field force of the accelerating electric field. When the cluster beam enters between the third and fourth electrodes, it is counteracted by the reaction force of the decelerating electric field, which cancels the acceleration force perpendicular to the initial flight direction, causing the cluster beam to continue to fly only along its original flight direction, thus exiting the mass selector through the second exit. Because cluster ions of different masses have different flight velocities in the mass selector, cluster ions of a specific target mass can be selected. The cluster beam quality selector provided in this application has a simple structure. Based on the mass difference of cluster ions, it causes different lateral displacements in ion beams of different masses, thereby achieving selection of ions within a specific mass range in the cluster ion beam. This improves the selection performance of traditional quality selectors, providing higher transmission efficiency, lower cluster beam loss, a wider quality selection range, and more accurate quality resolution. It is suitable for the quality analysis of high-energy cluster particles and nanoparticle beams. The cluster beam screening device and deposition equipment provided in this application include the aforementioned cluster beam quality selector, and therefore also possess the above-mentioned beneficial effects. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a cluster beam quality selector according to an embodiment of this application.

[0016] Figure 2 This is a cross-sectional view of the cluster beam quality selector according to an embodiment of this application (the two arc lines inside the quality selector are schematic curves representing the trajectory of the cluster beam during quality selection).

[0017] Figure 3 This is an exploded structural diagram of the deposition apparatus according to an embodiment of this application.

[0018] Figure 4 for Figure 3 A schematic diagram of the exploded structure of the deposition equipment from another perspective.

[0019] Figure 5 for Figure 3 A schematic diagram of the main structure of the deposition equipment.

[0020] Figure 6 for Figure 3 A side view of the deposition equipment.

[0021] Figure 7 This is a schematic diagram of the cluster beam trajectory for simulation test 1.

[0022] Figure 8 This is a schematic diagram of the cluster beam trajectory in simulation test 2.

[0023] Figure 9 for Figure 8 Enlarged diagram of point A.

[0024] The meanings of the labels in the attached diagram are as follows: 1. Cluster beam generation device; 2. Filtering components; 21. Filtering entry point; 3. Ion optical introduction device; 31. Inlet and outlet; 32. Inlet electrostatic single lens; 321. Electrode unit; 33. Ring electrode; 4. Cluster beam quality selector; 41. First electrode plate; 42. Second electrode plate; 43. Third electrode plate; 431. Metal mesh; 44. Fourth electrode plate; 45. Voltage regulator electrode plate; 46. Inlet; 47. First outlet; 48. Second outlet; 49. Mounting structure; 491. Fixing plate; 492. Main mounting plate; 493. Secondary mounting plate; 4931. First insulating component; 4932. Second insulating component; 5. Ion optical extraction device; 6. Substrate. Detailed Implementation

[0025] The technical solution of this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to limit the ways in which this application may be implemented. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0027] In the description of this application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0028] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0029] Time-of-flight (TOF) mass selectors are important devices in mass spectrometry analysis and are widely used in molecular analysis, chemical research, materials science, and biomedicine. TOF mass spectrometry infers the mass-to-charge ratio (m / z) of a cluster ion beam by measuring the flight time from the source to the detector. During TOF mass spectrometry analysis, particles fly at a certain speed under the acceleration of an electric field. The flight time is inversely proportional to the mass of the particle, thus enabling mass selection of particles by accurately measuring the flight time. Due to its high precision and wide range of applications, TOF mass spectrometry analysis has become one of the core tools in modern analytical techniques.

[0030] However, existing Time-of-Flight (TOF) mass selectors still face numerous technical challenges when dealing with complex cluster particle beams or multiple particle groups. Traditional TOF mass spectrometers rely primarily on high-precision electromagnetic field control to accelerate particles, but due to physical limitations, the mass selection range of existing TOF mass selectors is usually quite limited, making it difficult to efficiently handle particles over a wide mass range. This often leads to problems such as signal attenuation, inaccurate particle selection, or information loss when analyzing nanoparticles, clustered particles, or complex clusters.

[0031] Furthermore, while improving the selection accuracy of Time-of-Flight (TOF) mass selectors, existing technologies often sacrifice transmission efficiency, leading to information loss during particle transport and affecting the reliability and accuracy of analytical results. This is especially true when dealing with complex clusters of atoms, aggregates, or molecular populations. Achieving both efficient particle screening and a wide mass selection range simultaneously has become a major challenge in mass spectrometry. Therefore, expanding the applicable mass range of TOF mass selectors and improving the screening accuracy for different particle types (especially clusters of atoms or aggregates) without reducing transmission efficiency has become a pressing technical problem in this field. Solving these problems would greatly enhance the application capabilities and data quality of mass spectrometry in nanomaterials, chemical synthesis, life sciences, and other fields.

[0032] Please see Figure 1 and Figure 2 The cluster beam quality selector 4 in this embodiment includes a first electrode plate 41, a second electrode plate 42, a third electrode plate 43 and a fourth electrode plate 44 that are stacked and insulated from each other in sequence.

[0033] A slit is provided between the first electrode plate 41 and the second electrode plate 42, with one end forming an inlet 46 and the other end forming a first outlet 47. A second outlet 48 is provided between the third electrode plate 43 and the fourth electrode plate 44, located at the end of the cluster beam quality selector 4 furthest from the inlet 46. Both the first outlet 47 and the second outlet 48 of the quality selector are slits, allowing only the majority of the cluster beam of the selected quality to pass through, thus achieving the function of quality screening. A first quality selection channel is formed between the inlet 46 and the first outlet 47, and a second quality selection channel is formed between the inlet 46 and the second outlet 48.

[0034] The first plate 41 and the second plate 42 are used to form an accelerating electric field, the acceleration direction of which is perpendicular to the extension direction of the slit and toward the fourth plate 44; the third plate 43 and the fourth plate 44 are used to form a decelerating electric field, the electric field direction of which is opposite to that of the accelerating electric field.

[0035] The cluster beam quality selector 4 in this application embodiment is based on the lateral displacement technology of the ion beam. By applying an accelerating electric field, the ion beam to be selected is accelerated perpendicular to the original flight direction. After drifting for a certain period of time, the vertical movement of the ion beam is stopped by the action of a decelerating electric field, thereby realizing the quality selection function, improving the transmission efficiency and selection accuracy, and reducing the loss of the cluster beam.

[0036] Specifically, in some embodiments, a voltage-stabilizing electrode 45 is further provided between the second electrode 42 and the third electrode 43, and the number of voltage-stabilizing electrodes 45 is at least one. The area between the second electrode 42 and the third electrode 43 is used to form a uniform velocity region. For example, one, two, or three voltage-stabilizing electrodes 45 can be provided between the second electrode 42 and the third electrode 43. The area between the first electrode 41 and the second electrode 42 is used to form a vertical acceleration region for the cluster beam, the area between the third electrode 43 and the fourth electrode 44 is used to form a vertical deceleration region for the cluster beam, and all areas between the second electrode 42 and the third electrode 43 are used to form a uniform velocity region that is neither vertically accelerated nor vertically decelerated.

[0037] The following embodiment uses a five-layer cluster beam quality selector 4 as an example for illustration. The cluster beam quality selector 4 includes a first electrode plate 41, a second electrode plate 42, a voltage regulator electrode plate 45, a third electrode plate 43, and a fourth electrode plate 44 that are stacked and insulated from each other in sequence.

[0038] In some embodiments, a positive high-voltage pulse source is provided on one side surface of the first electrode plate 41. The positive high-voltage pulse source is used to apply a high-voltage pulse and form a positive high-voltage pulse between the first electrode plate 41 and the second electrode plate 42. A reverse high-voltage pulse source is provided on the fourth electrode plate 44. The reverse high-voltage pulse source is used to apply a high-voltage pulse and form a reverse high-voltage pulse on the third electrode plate 43 and the fourth electrode plate 44. Both the high-voltage pulse source and the reverse high-voltage pulse source are prior art devices capable of applying high-voltage pulses, and will not be described in detail here.

[0039] In some embodiments, a power supply device is further included, which is used to apply voltages to the first electrode 41, the second electrode 42, the third electrode 43, the fourth electrode 44, and the voltage-stabilizing electrode 45, respectively, so as to form an accelerating electric field between the first electrode 41 and the second electrode 42, a decelerating electric field between the third electrode 43 and the fourth electrode 44, and a uniform velocity region between the second electrode 42 and the third electrode 43. The power supply device can apply a normal voltage to each electrode.

[0040] For example, in some embodiments, when the cluster beam particles are positively charged, negative voltages can be applied to the second plate 42, the voltage regulator plate 45, and the third plate 43, such as a normal -500V voltage, to maintain a uniform field between the second plate 42 and the third plate 43, forming a uniform velocity region. Alternatively, voltage can be applied only to the second plate 42 and the third plate 43, without applying voltage to the voltage regulator plate 45 (i.e., the applied voltage is 0). Voltages with opposite phase or polarity to those of the plates between the first plate 41 and the fourth plate 44, or no voltage can be applied, to ensure that the electric field direction between the first plate 41 and the second plate 42 is opposite to the electric field direction between the third plate 43 and the fourth plate 44.

[0041] In some embodiments, a metal mesh 431 is provided on the second electrode plate 42 and / or the third electrode plate 43. The metal mesh 431 is arranged along the extension direction of the slit and is used to balance the electric field. The metal mesh 431 is disposed in the flight path of the cluster beam. The metal mesh 431 can be, for example, a tungsten wire mesh. The tungsten wire mesh can balance the electric field, thereby ensuring a uniform electric field distribution, making the cluster beam more uniformly stressed, and maintaining the stability of the system. The metal mesh 431 can be disposed at the end of the second electrode plate 42 or the third electrode plate 43 near the first electrode plate 41.

[0042] In some embodiments, the cluster beam quality selector 4 has mounting structures 49 at one end with an inlet 46 and at the other end with a first outlet 47. The mounting structures 49 are used for mounting and fixing to adjacent components. That is, the cluster beam quality selector 4 has a set of mounting structures 49 at each end along the original flight direction of the cluster beam. Each mounting structure 49 includes a fixing plate 491, a main mounting plate 492, and a secondary mounting plate 493. The fixing plate 491 is located at one end of the cluster beam quality selector 4. A secondary mounting plate 493 is provided on the outer wall of the quality selector on both sides of the fixing plate 491. The main mounting plate 492 is located at the outer end of the secondary mounting plate 493 and is also located on both sides of the fixing plate 491, forming an L-shaped structure with the secondary mounting plates 493. First insulating elements 4931 are provided on the adjacent sides of the secondary mounting plates 493, and multiple second insulating elements 4932 are also provided on the secondary mounting plates 493. Mounting structure 49 can be used to fix the ion optical introduction device 3 and ion optical extraction device 5 adjacent to the mass selector, and can also be used to fix the various plates together.

[0043] By setting up a series of high-performance insulating components, electrical isolation between the various plates can be ensured, avoiding current leakage and interference. The design of the insulating components takes into account stability under high voltage environments and uses materials with excellent electrical insulation properties, ensuring that the quality selector can operate reliably under high electric field and high-energy ion beam conditions.

[0044] The second outlet 48 of the cluster beam quality selector 4 in this embodiment is a slit, allowing only the majority of the cluster beam of the selected quality to pass through this outlet, thus achieving the function of quality screening. In this design, each pair of stacked conductive electrode plates is fixedly connected by an insulating structure. A potential difference is formed between the two outermost electrode plates and their adjacent electrode plates (for example, a potential difference is formed between the first electrode plate 41 and the second electrode plate 42; a potential difference is formed between the third electrode plate 43 and the fourth electrode plate 44), causing the cluster beam to be subjected to a force perpendicular to its original direction of motion, thus moving it vertically. The middle electrode plates are subjected to the same voltage, or no voltage is applied to the middle voltage-stabilizing electrode plate 45, forming a voltage-stabilizing region, allowing the cluster beam to fly without an electric field. The first electrode 41 provides a force perpendicular to the fourth electrode 44, and the fourth electrode 44 provides a downward force perpendicular to the first electrode 41 (the electrodes are arranged parallel to each other). The forces provided by the fourth electrode 44 and the first electrode 41 cancel each other out, and the final cluster beam still flies in the original direction. A pulse voltage is applied to the side plate of the intermediate layer electrode to filter ions that have completed a full pulse cycle, while ions that have not completed a full pulse cycle are filtered out. Cluster ions of different masses have different flight velocities in the mass selector and reach different distances and positions in the mass spacecraft, thereby enabling the function of filtering out cluster ions of a specific mass target.

[0045] The working principle of the cluster beam mass selector 4 in this embodiment is as follows: The cluster beam enters from the inlet 46 of the mass selector. Under the action of the precisely designed ion optical system (ion optical introduction device 3), the cluster beam is efficiently focused. When a short high-voltage pulse is applied to the first electrode 41 by the positive high-voltage pulse source, the ions in the cluster beam are accelerated and obtain a velocity perpendicular to the original beam flight direction. Clusters with the same mass will be accelerated to the area between the second electrode 42 and the third electrode 43. After passing through the metal mesh 431 to balance the electric field, they fly at a constant speed in the uniform velocity region. Finally, the cluster beam reaches the area between the third electrode 43 and the fourth electrode 44. Here, a reverse high-voltage pulse is applied by the reverse high-voltage pulse source, causing the cluster beam to decelerate and return to its original horizontal velocity, so that it can be released through the upper second outlet 48. If no voltage is applied to any of the electrodes of the mass selector, the cluster beam enters the mass selector through the ion optical introduction device 3, maintains its initial flight speed and direction, and is released through the first outlet 47. After the cluster beam leaves the mass selector through the first outlet 47 or the second outlet 48, it can be deposited onto the substrate 6 after being focused or dispersed by the ion optical extraction device 5, thus enabling the mass selector to have multiple uses.

[0046] The cluster beam quality selector 4 provided in this embodiment has the following features: Mass selection method: A pulsed electric field is used to move the cluster beam laterally, causing ions of different masses to have different displacements, thereby achieving mass separation; Pulsed electric field control: By applying short-duration high-voltage pulses to each of the parallel plates, the lateral acceleration and deceleration of ions are controlled to ensure that ions of the same mass obtain the same lateral velocity, and the lateral motion is eliminated in the subsequent stage, so that they return to their original direction of flight; Mass selection accuracy: By using a time-limited pulsed electric field to control the lateral displacement of ions, ions of different masses form different parallel beams at the exit position, and the target mass range is selected through the small hole of the slit, which has high mass selection accuracy. Ion transport efficiency: When the selected mass of ions enters the deceleration region, they are subjected to a pulse action in the opposite direction to the acceleration direction, which restores their original direction of motion, thereby achieving efficient transport with a transmittance of 50% or higher. Relationship between flight time and mass: Mass selection depends only on the flight time required for the ion's lateral displacement, which is determined by the intensity and duration of the high-voltage pulse and is independent of the ion's forward kinetic energy; Applications: This mass selector is suitable for charged particles of different sizes, from single atoms to nanoscale particles, and can be used in a variety of experimental and industrial applications, such as cluster deposition and ion screening.

[0047] like Figures 3 to 6As shown, this application embodiment also provides a cluster beam screening device, including the cluster beam quality selector 4 of the above embodiment. Specifically, in some embodiments, the cluster beam screening device includes a cluster beam generating device 1, a screening component 2, an ion optical introduction device 3, a cluster beam quality selector 4, and an ion optical extraction device 5 arranged sequentially.

[0048] The cluster beam generating device 1 is used to form and output a cluster beam. The cluster beam generating device 1 can be, for example, a magnetron sputtering device or a gas focusing method to form the cluster beam. The cluster beam generated by the cluster beam generating device 1 consists of particles with charged charges; in this application, positively charged particles are used as examples for illustration.

[0049] The screening component 2 is used to separate particles of different sizes in the cluster beam and form a collimated fine beam through a differential pumping system or a separation cone. The cluster beam is emitted from the cluster beam generating device 1, and the screening component 2 removes the turbulent beam at the edges, retaining the beam located in the center. For example, after the cluster beam is generated by magnetron sputtering or gas focusing, the cluster beam is formed in the condensation chamber and then enters the high vacuum region through the screening component 2, terminating the cluster beam growth and filtering out divergent particles, ultimately forming a uniform beam. The end of the screening component 2 near the cluster beam generating device 1 is provided with a screening inlet 21, which is a circular hole with an adjustable diameter. The screening inlet 21 is used to control the beam radius by adjusting the size of the hole. For example, in some embodiments, a small circular hole with a diameter of about 5 mm is opened at the center of the conical structure of the screening component 2, and a voltage of -100V is applied to the conical structure to introduce the cluster beam. Except for the screening inlet 21, the rest of the surface is conical. The circular aperture is expandable and contractible, allowing for adjustment of its diameter, which in turn controls the radius of the cluster beam. The screening component 2 serves to separate and collimate the cluster beam and reduce contamination, making it a crucial component for cluster beam quality control. The separation cone includes a conical structure. The smaller end of the cone forms a screening inlet 21 for the filtered cluster beam to pass through. The screening inlet 21 is located near the cluster beam generating device 1. The cross-sectional area of ​​the conical structure increases along the direction from the cluster beam generating device 1 towards the ion optical introduction device 3. The conical structure is conductive. For example, applying a negative voltage to the separation cone creates a negative charge, thereby introducing the cluster beam into the separation cone. The conical structure removes turbulent beams at the edges, leaving the central beam, which exits through the screening outlet of the screening component 2. The component also has a conductive structure, allowing it to be connected to an external power source to apply voltage. If the cluster beam carries a positive charge, a negative voltage is applied to the screening component 2 to form a negative charge. Then, the cluster beam is introduced from the cluster beam generating device 1 through the screening component 2 into the ion optical introduction device 3. The entire device operates in a vacuum environment.

[0050] The ion optics introduction device 3 is used to focus or diverge the cluster beam (the higher the degree of focus, the easier it is to pass through screening, that is, the smaller the degree of divergence, the better), so that the cluster beam is more focused, so as to better screen at the slit of the subsequent quality selector.

[0051] In some embodiments, the ion optical introduction device 3 includes at least one set of electrostatic single lenses 32 and an annular electrode 33, with the at least one set of electrostatic single lenses sequentially disposed on the side of the annular electrode 33 near the screening component 2. For example, in some embodiments, the ion optical introduction device 3 includes two sets of electrostatic single lenses 32 and an annular electrode 33. Each set of electrostatic single lenses 32 includes three electrode units 321 arranged sequentially along the axial direction. The three electrode units 321 are annular and are mutually insulated and fixed by an insulating structure, such as a ceramic structure. Different voltages can be applied to the three electrode units 321. The two electrode units 321 at both ends are applied the same voltage, while the voltage of the middle electrode unit 321 is higher or lower than that of the other two electrode units 321, to achieve focusing or divergence. The more electrode units 321 in the electrostatic single lens 32, the more combinations of applied voltages, the more focusing or diverging processes, and the stronger the control capability of the cluster beam. The annular electrode 33 is located at the tail end of the two sets of electrostatic single lenses 32, near the cluster beam quality selector 4, and is insulated from the electrostatic single lenses 32. The end of the annular electrode 33 near the cluster beam quality selector 4 has a sidewall with a through hole, which serves as the inlet / outlet 31. The end of the set of electrostatic single lenses 32 furthest from the annular electrode is open, forming the inlet. After being filtered by the screening component 2, the cluster beam enters the ion optical introduction device 3 through the inlet. After being focused or diverged by the ion optical introduction device 3, it exits through the inlet / outlet 31. The two sets of electrostatic single lenses 32 and the annular electrode 33 are connected, forming a channel for the cluster beam to enter and exit. The annular electrode 33 of the ion optical introduction device 3 is subjected to the same steady-state voltage as the cluster beam quality selector 4 (each of the middle plates), such as -500V, to reduce the impact of electric field changes on the cluster beam when it transitions from the ion optical introduction device 3 to the cluster beam quality selector 4. After passing through the screening component 2, the cluster beam is introduced by the ion optical introduction device 3, and its state is regulated before being transported to the cluster beam quality selector 4. Specifically, the first set of three-segment electrostatic single lenses 32 of the ion optical introduction device 3 uses a low-high-low voltage application method to focus the cluster beam at the middle electrode unit 321 before diverging, completing the first beam regulation and transport. The second set of three-segment electrostatic single lenses 32 uses a high-low-high voltage to focus the previously diverged cluster beam at a certain angle at the end electrode unit 321, maximizing the extension of the focusing distance into the cluster beam quality selector 4.

[0052] A cluster beam quality selector 4 is positioned between the ion optical introduction device 3 and the ion optical extraction device 5, with its end adjacent to the ion optical introduction device 3 located near the annular electrode 33. The inlet 46 of the cluster beam quality selector 4 is connected to the inlet / outlet 31 of the ion optical introduction device 3 to receive the cluster beam after it has been focused or diverged by the ion optical introduction device 3. This allows it to apply a force perpendicular to the flight direction of the cluster beam, thus performing quality selection on the particles within the cluster beam. The cluster beam quality selector 4 works in conjunction with the ion optical introduction device 3 at its front end to minimize the divergence of the cluster beam at its slit (second outlet 48), thereby optimizing the resolution of the cluster beam quality selector 4. The selected cluster beam is then extracted to the ion optical extraction device 5, where the cluster beam state is adjusted again.

[0053] The number of ion optical extraction devices 5 can be two sets, one set connected to the first outlet 47 of the cluster beam quality selector 4, and the other set connected to the second outlet 48 of the cluster beam quality selector 4. Each set of ion optical extraction devices 5 includes at least one set of extraction electrostatic single lenses. For example, such as... Figure 5 As shown, the ion optical extraction device 5 may include only one set of extraction electrostatic single lenses; in other embodiments, it may include two or more sets of extraction electrostatic single lenses. The ion optical extraction device 5 is used to extract the cluster beam filtered by the cluster beam quality selector 4 to a preset position. Specifically, in some embodiments, the ion optical extraction device 5 employs a structure comprising a set of three-segment annular extraction electrostatic single lenses arranged sequentially along the same axis. The structure of the extraction electrostatic single lens is the same as that of the introduction electrostatic single lens 32, including three hollow electrode units 321 arranged sequentially along the same axis. The first electrode unit 321, closest to the cluster beam quality selector 4, is applied with the same -500V voltage as the quality selector to reduce the impact of particle beam transition. The second electrode unit 321 in the middle can be applied with a lower voltage than the first electrode unit 321, such as -2000V, while the last third electrode unit 321 is applied with the same -500V voltage as the first electrode unit 321, so as to form a focused electric field and thereby control the spot size at the deposition location.

[0054] When the entire device is powered by a negative voltage supply, it captures positive cluster beams. Conversely, when the entire device is powered by a positive voltage supply, it captures negative cluster beams.

[0055] This application also provides a deposition apparatus, including the cluster beam screening device of the above embodiment, and a substrate 6 disposed at the extraction outlet of the ion optical extraction device 5. The substrate 6 has substrate 6 electrodes for applying voltage. The number of substrates 6 matches the number of ion optical extraction devices 5, with each group of ion optical extraction devices 5 having a corresponding substrate 6 at its end. Applying voltage to the substrate 6 electrodes allows the cluster beam to be deposited on the substrate 6. For example, the same -500V voltage as the third electrode unit 321 of the ion optical extraction device 5 can be applied to the substrate 6 to maintain the uniform field region between the ion optical extraction device and the substrate 6, eliminating the influence of this transmission process on the beam.

[0056] The cluster beam is focused on the region deposited on the substrate 6 by an ion optical extraction device 5.

[0057] The power supply device is used to provide power to the deposition equipment and apply voltage to the screening component 2, the ion optical introduction device 3, the cluster beam quality selector 4, the ion optical extraction device 5, and the substrate 6 to form an electric field.

[0058] The deposition apparatus of this embodiment operates as follows: A cluster beam is emitted from the cluster beam generation device 1. A screening component 2 removes turbulent beams from the edges, retaining the beam located in the center. This beam is then introduced by the ion optical introduction device 3, and its state is regulated before being transported to the cluster beam quality selector 4. The cluster beam quality selector 4 performs quality screening on the cluster beam. The selected cluster beams are then led out to the ion optical extraction device 5, where their beam state is regulated again, and subsequently deposited on the substrate 6.

[0059] To demonstrate the quality selection effect of the cluster beam quality selector 4 in this application embodiment, the following simulation tests were conducted using simulation software. Simulation test 1 was used to test the effect of the cluster beam passing through the device when the quality selection function was not enabled (no voltage was applied to the cluster beam quality selector 4), and simulation test 2 was used to test the effect of the cluster beam passing through the device when the quality selection function was enabled (voltage was applied to the cluster beam quality selector 4).

[0060] Simulation Test 1: Figure 7 As shown, the cluster beam particles used in the test have the following properties: relative atomic mass 3200, Cu50 cluster ions, generation radius of 5 mm, beam divergence half angle of 10°, generation ion kinetic energy of 2 eV, and generation time interval of 0.01 μs.

[0061] After the initial cluster beam is generated by the particle source, it is focused and introduced into the ion optical introduction device 3 by the voltage of the screening component 2 and the first set of three-segment electrostatic single lens 32, completing the first beam modulation. Subsequently, the diverging beam is modulated a second time by the voltage of the 4th to 6th electrode units 321 of the second set of three-segment electrostatic single lens 32, and a delayed focusing effect is achieved by the voltage difference between the 6th section and the ring electrode 33. Since the normal voltage of the ring electrode 33 of the ion optical introduction device 3 and the cluster beam quality selector 4 is consistent, it will not be affected by other forces during the transition, and the cluster beam will maintain a small tilt angle and slow convergence state emitted from the ring electrode 33 of the ion optical introduction device 3.

[0062] When the quality screening function is not enabled, the same voltage is applied to the internal plates of the cluster quality selector, which acts as a transmission device to maintain the uniform field region. Based on the simulated beam pattern, the focal point of the ion-optical introduced beam under this simulated voltage can reach the middle position of the cluster quality selector, and then diverges again from the middle position to the slit, restoring the beam width of the ion-optical introduced device 3 at the inlet / outlet 31. This maximizes the throughput at both the entry and exit points of the cluster quality selector. Subsequently, the first section of the three-section electrostatic single lens of the ion-optical extractor 5 is subjected to the same steady-state voltage as the cluster beam quality selector 4. The beam emitted from the cluster beam quality selector 4 maintains its original state and is introduced into the focusing electric field of the downstream ion optics, where the divergent beam is refocused.

[0063] The substrate 6 maintains a uniform field region by applying the same voltage as the last electrode unit 321 of the ion optical extraction device 5, and the final cluster beam is deposited on the substrate 6 in a focused emission state. When the quality screening function is not enabled, the overall beam throughput of the device and this control method is 73.3%, which greatly reduces the loss of particles during the transport process from generation to deposition.

[0064] Simulation Test 2: The cluster beam particles used in the test have a relative atomic mass of 3000 ( Figure 8 (represented by green in the text), 3200 ( Figure 8 (represented in red), 3400 ( Figure 8 The mixed-mass particle beam (represented by blue in the image) passes through the device to generate Cu50 cluster ions. The generation radius is 5 mm, the beam divergence half-angle is 10°, the kinetic energy of the generated ions is 2 eV, and the generation time interval is 0.01 μs.

[0065] After the initial cluster beam is generated by the particle source, it passes through the screening component 2 and is then focused by the voltage of the first set of three-segment electrostatic single lenses 32 into the ion optical introduction device 3, completing the first beam modulation. The subsequently diverging beam undergoes a second beam modulation through the voltage of the 4th-6th electrode units 321 of the second set of three-segment electrostatic single lenses 32, and a delayed focusing effect is achieved through the voltage difference between the 6th electrode unit 321 and the ring electrode 33. Since the ring electrode 33 of the ion optical introduction device 3 and the cluster beam quality selector 4 have the same normal voltage, they are not affected by other forces during the transition process, and the cluster beam will maintain a small-angle, slow-converging state exiting from the ring electrode 33 of the ion optical introduction device 3.

[0066] When the cluster beam enters the cluster beam mass selector 4, the first electrode 41 lifts the beam with a pulsed voltage and flies through the uniform field region of the second electrode 42, the voltage-stabilizing electrode 45, and the third electrode 43. It is then decelerated by the pulsed voltage of the fourth electrode 44 to return to purely horizontal flight. Due to the different particle masses and flight speeds, the beams of different masses arrive at different positions. By adjusting the appropriate pulse period, it is possible to control the position where only the selected 3200 mass beam can pass through the slit (second exit 48) with the majority of its weight. The first electrode unit 321 of the three-section electrostatic single lens of the subsequent ion optics extraction device 5, because it is subjected to the same steady-state voltage as the cluster beam mass selector 4, maintains the original state of the beam emitted from the cluster beam mass selector 4 and is introduced into the focusing electric field of the downstream ion optics, where the divergent beam is refocused.

[0067] After screening, the selected high-quality cluster beam is then drawn into the ion optical extraction device 5, where it undergoes further beam state modulation before being deposited onto the substrate 6. For example... Figure 9 As shown, during substrate 6 deposition, the peak positions of the 3000, 3200, and 3400 mass beams are clearly distinguishable.

[0068] Therefore, the quality resolution of the simulation test under this control method is: This approached the highest theoretical resolution of 20 for this size of cluster beam quality selector, significantly improving the actual resolution of the cluster beam quality selector. With the quality screening function enabled, the beam top exit throughput of the entire device within one pulse cycle was 26.9%.

[0069] The deposition equipment provided in this application combines a cluster beam generation device, a screening component, an ion optical introduction device, a cluster beam quality selector, an ion optical extraction device, and a specific substrate structure. By applying specific voltage requirements to certain components, the impact of changes in the cluster beam state during the transition between different components is reduced. Through multiple adjustments to the cluster beam state, the overall performance of the device is enhanced, while exhibiting good transport throughput, quality selection resolution, and focusing or diverging deposition capabilities. This achieves a modular solution for controlling the cluster beam state and quality selection from the generation device to the deposition position. The cluster beam quality selector, screening device, and deposition equipment provided in this application have advantages such as compact size, high quality selector accuracy, and low cluster beam loss.

[0070] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0071] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A cluster beam quality selector, characterized in that, It includes a first electrode plate, a second electrode plate, a third electrode plate, and a fourth electrode plate that are stacked on top of each other and insulated from each other; A slit is provided between the first electrode plate and the second electrode plate, with one end of the slit forming an inlet and the other end forming a first outlet. A second outlet is provided between the third electrode plate and the fourth electrode plate, with the second outlet located at the end of the cluster beam quality selector away from the inlet. The first and second plates are used to form an accelerating electric field, the acceleration direction of which is perpendicular to the extension direction of the slit and toward the fourth plate; the third and fourth plates are used to form a decelerating electric field, the electric field direction of which is opposite to that of the accelerating electric field.

2. The cluster beam quality selector as described in claim 1, characterized in that, A voltage-stabilizing plate is also provided between the second plate and the third plate, and the number of voltage-stabilizing plates is at least one. The area between the second plate and the third plate is used to form a uniform velocity region.

3. The cluster beam quality selector as described in claim 2, characterized in that, The first electrode plate is provided with a positive high-voltage pulse source, which is used to generate a positive high-voltage pulse between the first electrode plate and the second electrode plate; the fourth electrode plate is provided with a reverse high-voltage pulse source, which is used to generate a reverse high-voltage pulse between the third electrode plate and the fourth electrode plate.

4. The cluster beam quality selector as described in claim 2, characterized in that, It also includes a power supply device, which is used to apply voltage to the first electrode plate, the second electrode plate, the third electrode plate, the fourth electrode plate and the voltage stabilizing electrode plate respectively, so that the accelerating electric field is formed between the first electrode plate and the second electrode plate, the decelerating electric field is formed between the third electrode plate and the fourth electrode plate, and the uniform velocity region is formed between the second electrode plate and the third electrode plate.

5. The cluster beam quality selector as described in claim 1, characterized in that, The second electrode plate and / or the third electrode plate are provided with a metal mesh, which is arranged along the extension direction of the slit and is used to balance the electric field.

6. The cluster beam quality selector as described in claim 1, characterized in that, The cluster beam quality selector has mounting structures at one end with an inlet and at the other end with a first outlet, which are used to install and fix with adjacent components.

7. A cluster beam screening device, characterized in that, The device includes a cluster beam quality selector as described in any one of claims 1 to 6, and further includes a cluster beam generation device, a screening component, an ion optical introduction device, and an ion optical extraction device arranged sequentially. The cluster beam quality selector is located between the ion optical introduction device and the ion optical extraction device, and one end of the device having the inlet is located close to the ion optical introduction device.

8. The cluster beam screening device as described in claim 7, characterized in that, The screening component includes a differential pumping system or a separation cone. The end of the screening component near the cluster beam generating device is provided with a screening inlet. The screening inlet is a circular hole with an adjustable diameter. The screening inlet is used to control the beam radius by adjusting the hole size.

9. The cluster beam screening device as described in claim 7, characterized in that, The ion optical introduction device includes at least one set of electrostatic single lenses and a ring electrode, wherein the at least one set of electrostatic single lenses is sequentially disposed on the side of the ring electrode close to the screening component. The ion optical extraction device includes at least one set of extraction electrostatic single lenses.

10. A deposition apparatus, characterized in that, The device includes a cluster beam screening apparatus as described in any one of claims 7 to 9, and further includes a substrate disposed at the outlet of the ion optical extraction device, wherein the substrate is provided with a substrate electrode for applying voltage.

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