Semiconductor tail gas treatment system

Abstract

This utility model discloses a semiconductor exhaust gas treatment system, comprising: an exhaust pipe, one end of which is connected to a semiconductor process chamber; a pressure control valve is provided on the exhaust pipe, and multiple joints are spaced apart along the exhaust path of the exhaust pipe; a first isolation valve is provided on the exhaust pipe upstream of the pressure control valve, and at least one joint is provided on the exhaust pipe between the first isolation valve and the pressure control valve; and a plasma cleaning mechanism, which includes a remote plasma source, a gas supply component, and a gas channel. This utility model effectively avoids plasma transmission attenuation in long-distance or curved pipes, eliminates cleaning blind spots, prevents high-temperature plasma from causing valve plate blackening or sealing ring deformation, ensures the adjustment accuracy and sealing reliability of the pressure control valve, and extends the valve's service life.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and specifically to a semiconductor exhaust gas treatment system. Background Technology

[0002] In semiconductor manufacturing, semiconductor process chambers are used for processes such as thin-film deposition. Their exhaust systems are responsible for expelling the waste gases generated during the reactions from the semiconductor process chambers to the exhaust gas processor. However, due to the high temperatures and toxic or flammable deposits produced during the process, deposits easily accumulate on the inner walls of the exhaust pipes in the exhaust system, leading to pipe blockage, reduced emission efficiency, and even safety hazards. Pressure control valves are installed on the exhaust pipes, and deposits are even more likely to accumulate inside these valves, thus affecting the pressure regulation accuracy of the valves.

[0003] In existing technologies, the cleaning of exhaust gas emission systems mainly relies on manual cleaning or replacement after physically dismantling the pipes. This method requires shutdown, is time-consuming, and severely impacts production efficiency. Furthermore, when existing plasma cleaning methods are applied to long-distance or bend-shaped exhaust pipes, plasma attenuation during transmission leads to incomplete removal of deposits at the pipe ends, creating cleaning blind spots and failing to thoroughly clean the exhaust pipes. Additionally, the high-temperature plasma can blacken the valve plates of pressure control valves on the exhaust pipes and deform the sealing rings, affecting the operation of the pressure control valves. Utility Model Content

[0004] The purpose of this invention is to provide a semiconductor exhaust gas treatment system to overcome the blind zone problem in the cleaning process of the exhaust pipe connected to the semiconductor process chamber in the prior art, ensure the removal of deposits in the exhaust pipe, and reduce the damage of high temperature plasma to the valve plate and sealing ring of the pressure control valve.

[0005] To achieve the above objectives, this utility model is implemented through the following technical solution:

[0006] This utility model provides a semiconductor exhaust gas treatment system, comprising:

[0007] An exhaust pipe is provided, one end of which is connected to a semiconductor process chamber; a pressure control valve is provided on the exhaust pipe, and multiple joints are provided at intervals along the exhaust path; a first isolation valve is provided on the exhaust pipe upstream of the pressure control valve, and at least one joint is provided on the exhaust pipe between the first isolation valve and the pressure control valve;

[0008] A plasma cleaning mechanism includes a remote plasma source, a gas supply assembly, and a gas channel; the gas supply assembly is connected to the remote plasma source to supply etching gas to the remote plasma source; the remote plasma source is used to ionize the etching gas; one end of the gas channel is connected to the remote plasma source, and the other end is detachably connected to any of the said joints via a connector.

[0009] Preferably, the semiconductor exhaust gas treatment system further includes a heat exchange mechanism, the heat exchange mechanism comprising:

[0010] A heat exchange sleeve is fitted onto the pressure control valve for heat exchange with the pressure control valve.

[0011] A heat exchange medium supply assembly, which is connected to the heat exchange sleeve, is used to supply heat exchange medium to the heat exchange sleeve.

[0012] Preferably, the heat exchange mechanism further includes:

[0013] A temperature measuring component is disposed on the pressure control valve for measuring the temperature inside the valve chamber of the pressure control valve; the temperature measuring component is communicatively connected to the heat exchange medium supply component for feeding back the measured temperature data to the heat exchange medium supply component, and the heat exchange medium supply component is configured to adjust the temperature of the heat exchange medium based on the temperature data.

[0014] Preferably, the semiconductor exhaust gas treatment system further includes a vacuum generating component, which is connected to the other end of the exhaust pipe.

[0015] Preferably, the semiconductor exhaust gas treatment system further includes an exhaust gas processor connected to the vacuum generating component; the exhaust gas processor is connected to the exhaust pipe via a gas pipeline, and a pneumatic valve is provided on the gas pipeline to prevent exhaust gas in the exhaust gas processor from flowing back into the exhaust pipe.

[0016] Preferably, the connector has a first flange at its end away from the gas passage; the joint includes an angle valve, one end of which has a second flange; the connector is detachably connected to the angle valve via the mating of the first flange and the second flange.

[0017] Preferably, the connector comprises a metal bellows.

[0018] Preferably, the semiconductor exhaust gas treatment system further includes a mobile platform for carrying the plasma cleaning mechanism and moving the plasma cleaning mechanism to a location adjacent to different joints.

[0019] Preferably, the gas supply assembly includes a first gas source and a second gas source, the first gas source and the second gas source being respectively connected to the remote plasma source, the first gas source being configured to supply etching gas to the remote plasma source, and the second gas source being configured to supply carrier gas to the remote plasma source.

[0020] Preferably, the gas passage is provided with a second isolation valve, which is used to close or open the gas passage.

[0021] Preferably, the vacuum generating assembly includes a dry vacuum pump.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] This invention provides a semiconductor exhaust gas treatment system. By setting multiple joints on the exhaust pipe of the semiconductor process chamber, a plasma cleaning mechanism can be detachably connected to any of the joints via connectors to perform segmented cleaning of the exhaust pipe. This effectively avoids plasma transmission attenuation in long-distance or curved pipes and eliminates cleaning blind spots. Simultaneously, this invention introduces a heat exchange mechanism. The heat exchange medium supply component in the heat exchange mechanism provides heat exchange media of different temperatures to the heat exchange sleeve. During the semiconductor process, the pressure control valve is heated to inhibit deposit condensation; during the plasma cleaning process, the pressure control valve is cooled to prevent high-temperature plasma from causing valve plate blackening or sealing ring deformation, thereby ensuring the adjustment accuracy and sealing reliability of the pressure control valve and extending its service life. Attached Figure Description

[0024] To more clearly illustrate the technical solution of this utility model, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are three embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 A schematic diagram of a semiconductor exhaust gas treatment system provided in an embodiment of the present invention.

[0026] Explanation of reference numerals in the attached drawings: 101-Semiconductor process chamber; 102-First isolation valve; 103-a-First joint; 103-b-Second joint; 103-c-Third joint; 104-Pneumatic valve; 105-Connector; 106-Second isolation valve; 107-Remote plasma source; 108-Moving platform; 109-Pressure control valve; 110-Heat exchange sleeve; 111-Heat exchange medium supply assembly; 112-Vacuum generating assembly; 113-Exhaust gas processor; 114-First gas source; 115-Second gas source. Detailed Implementation

[0027] The following is in conjunction with the appendix Figure 1 The semiconductor exhaust gas treatment system proposed in this utility model will be further described in detail below with specific embodiments. The advantages and features of this utility model will become clearer from the following description. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, only for the purpose of conveniently and clearly illustrating the embodiments of this utility model. Please refer to the accompanying drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.

[0028] refer to Figure 1 As shown, this embodiment provides a semiconductor exhaust gas treatment system, including: an exhaust pipe and a plasma cleaning mechanism. One end of the exhaust pipe is connected to a semiconductor process chamber 101, and the plasma cleaning mechanism provides ionized etching gas to clean the exhaust pipe. The semiconductor process chamber 101 is used for processes such as thin film deposition. The exhaust gas generated in the semiconductor process chamber 101 is discharged through an exhaust pipe. The exhaust pipe is equipped with a pressure control valve 109 (the pressure control valve 109 can be a butterfly valve, used to precisely regulate the pressure in the exhaust pipe to ensure the stability of the process environment in the semiconductor process chamber 101), and the exhaust pipe is provided with multiple joints at intervals along the exhaust path. The plasma cleaning mechanism includes a remote plasma source 107, a gas supply component, and a gas channel. The gas supply component is connected to the remote plasma source 107 to supply etching gas to the remote plasma source 107. The remote plasma source 107 is used to ionize the etching gas. One end of the gas channel is connected to the remote plasma source 107, and the other end is detachably connected to any of the joints through a connector 105, so that the remote plasma source 107 can be switched to different joints through the connector 105. Through this switching connection design, the system can achieve segmented cleaning of the exhaust pipe, avoiding plasma attenuation during long-distance transmission, ensuring that the deposits in each segment can be completely removed, thereby improving the overall cleaning efficiency.

[0029] A first isolation valve 102 is provided on the exhaust pipe upstream of the pressure control valve 109. The first isolation valve 102 is used to isolate the semiconductor process chamber 101 from the ionized etching gas. At least one joint is provided on the exhaust pipe between the first isolation valve 102 and the pressure control valve 109, allowing the plasma cleaning mechanism to clean the pressure control valve 109, ensuring its cleanliness, thereby maintaining its adjustment accuracy and sealing reliability, and extending the valve's service life. (Reference) Figure 1 As shown in the diagram, there are three joints: a first joint 103-a, a second joint 103-b, and a third joint 103-c. The first joint 103-a is located between the first isolation valve 102 and the pressure control valve 109. The second joint 103-b and the third joint 103-c are both located between the pressure control valve 109 and the vacuum generating assembly 112. In actual use, the number or arrangement of the joints can be adapted to the length or location of the exhaust pipe, and is not limited to this. Figure 1 The arrangement or number of joints shown.

[0030] In this embodiment, the connector 105 has a first flange at its end away from the gas passage; the joint includes an angle valve, and one end of the angle valve has a second flange; the connector 105 is detachably connected to the angle valve via the mating of the first and second flanges. This detachable flange connection ensures a tight seal while allowing for quick installation and disassembly, making it suitable for scenarios where the semiconductor exhaust gas treatment system frequently switches cleaning positions. In this embodiment, the connector 105 includes a metal bellows. The first flange at the end of the metal bellows away from the gas passage connects to the second flange on the angle valve. The mating of the first and second flanges enables a detachable connection between the metal bellows and the angle valve. The metal bellows compensates for misalignment between pipelines, facilitating the connection between the connector 105 and the joint.

[0031] The gas supply assembly includes a first gas source 114 and a second gas source 115, both connected to the remote plasma source 107. The first gas source 114 is configured to supply etching gas to the remote plasma source 107, and the second gas source 115 is configured to supply carrier gas to the remote plasma source 107. Specifically, the first gas source 114 supplies a fluorine-containing etching gas, such as nitrogen trifluoride, to react chemically with the deposits to generate volatile products. The second gas source 115 supplies an inert carrier gas, such as argon, to regulate the gas mixing ratio. Both gas sources are regulated by independent flow controllers to ensure the controllability and safety of the cleaning process.

[0032] In this embodiment, the semiconductor exhaust gas treatment system further includes a moving platform 108, which carries the plasma cleaning mechanism and moves the plasma cleaning mechanism to adjacent positions of different joints. The moving platform 108 facilitates the movement of the plasma cleaning mechanism and accelerates the cleaning efficiency of the semiconductor exhaust gas treatment system.

[0033] In this embodiment, a second isolation valve 106 is provided on the gas passage. The second isolation valve 106 is used to close or open the gas passage. When cleaning is not initiated, the second isolation valve 106 is closed to isolate it from the exhaust pipe. When cleaning is required, the second isolation valve 106 is opened to allow ionized gas to flow into the exhaust pipe.

[0034] Continue to refer to Figure 1 As shown, the semiconductor exhaust gas treatment system also includes a vacuum generating component 112, which is connected to the other end of the exhaust pipe. In one embodiment, the vacuum generating component 112 includes a dry vacuum pump. Under normal operating conditions (i.e., during semiconductor processing), when the vacuum generating component 112 is turned on, it evacuates the exhaust pipe to facilitate the discharge of exhaust gas from the semiconductor process chamber 101. Under conditions where the exhaust pipe is being cleaned (i.e., during plasma cleaning), the vacuum generating component 112 rapidly establishes a high vacuum environment by evacuating gas from the exhaust pipe to meet the ignition requirements of the remote plasma source 107.

[0035] In this embodiment, the semiconductor exhaust gas treatment system further includes an exhaust gas processor 113, which is connected to the vacuum generating component 112. After the vacuum generating component 112 evacuates the exhaust pipe, it pumps the exhaust gas in the exhaust pipe or the etching gas after cleaning the exhaust pipe into the exhaust gas processor 113, where the exhaust gas processor 113 processes the exhaust gas. The exhaust gas processor 113 is connected to the exhaust pipe via a gas pipeline, on which a pneumatic valve 104 is provided. The pneumatic valve 104 is used to prevent the exhaust gas in the exhaust gas processor 113 from flowing back into the exhaust pipe. The pneumatic valve 104 automatically closes in cleaning mode to form an isolation barrier and prevent backflow pollution, while opening in normal emission mode to allow the exhaust gas to flow smoothly, thereby maintaining the safety and continuity of the system.

[0036] Continue to refer to Figure 1 As shown, Figure 1 The area above the dashed line represents the machine end, and the area below the dashed line represents the gray zone. The exhaust gas processor 113, vacuum generating assembly 112, and pneumatic valve 104 are all located at... Figure 1Below the dashed line is the gray zone, which is a transitional area between the cleanroom and the plant area. The main function of the gray zone is to handle and control the gases, liquids or other substances discharged from the cleanroom to ensure that these substances do not pollute the cleanroom environment or damage the plant equipment.

[0037] Continue to refer to Figure 1 As shown, the semiconductor exhaust gas treatment system further includes a heat exchange mechanism, which comprises a heat exchange sleeve 110 and a heat exchange medium supply assembly 111. The heat exchange sleeve 110 is fitted onto the pressure control valve 109 for heat exchange with the pressure control valve 109. The heat exchange medium supply assembly 111 is connected to the heat exchange sleeve 110 and provides a heat exchange medium to the heat exchange sleeve 110.

[0038] The heat exchange mechanism further includes a temperature measuring component disposed on the pressure control valve 109 (the temperature measuring component is installed at a key location in the valve cavity of the pressure control valve 109, such as near the valve plate), for measuring the temperature inside the valve cavity of the pressure control valve 109 (especially the temperature at the valve plate); the temperature measuring component is communicatively connected to the heat exchange medium supply component 111 for feeding back the measured temperature data to the heat exchange medium supply component 111, the heat exchange medium supply component 111 being configured to adjust the temperature of the heat exchange medium based on the temperature data.

[0039] The heat exchange medium supply component 111 includes a control unit connected to the temperature measurement component. The control unit receives temperature data transmitted by the temperature measurement component and outputs command signals to the heat exchange medium supply component 111 to adjust the temperature of the heat exchange medium.

[0040] Specifically, the working process of the heat exchange mechanism is described under the following two operating conditions:

[0041] 1. Under normal operating conditions (i.e., during semiconductor processing), the heat exchange medium supply assembly 111 provides a heat exchange medium (such as ethylene glycol solution) at a temperature of 80-120°C, which circulates through the heat exchange sleeve 110 and exchanges heat with the valve body of the pressure control valve 109, thereby heating the inside of the valve chamber of the pressure control valve 109, suppressing the condensation and accumulation of deposits in the process exhaust gas, and maintaining the valve's adjustment accuracy.

[0042] Second, during the cleaning process (i.e., plasma cleaning), the heat exchange medium supply component 111 switches to provide a cooling medium at a temperature of 20-30°C, which cools the pressure control valve 109 through the heat exchange sleeve 110. This prevents the heat generated by the high-power plasma from causing the valve plate of the pressure control valve 109 to become blackened or the O-ring at the valve plate to deform, effectively avoiding sealing failure at the valve plate or inaccurate pressure control of the pressure control valve 109.

[0043] In summary, this embodiment provides a semiconductor exhaust gas treatment system. By providing multiple joints at intervals on the exhaust pipe and at least one joint between the first isolation valve 102 and the pressure control valve 109, combined with a detachably connected plasma cleaning mechanism, segmented cleaning of the exhaust pipe is achieved. This effectively avoids plasma transmission attenuation in long-distance or curved pipes, eliminates cleaning blind spots, and ensures that deposits in the pipe are thoroughly removed, thereby reducing the risk of exhaust pipe blockage and significantly reducing safety hazards. Simultaneously, this embodiment incorporates a heat exchange mechanism, including a heat exchange medium supply component 111, a temperature measurement component, and a heat exchange sleeve 110 fitted onto the pressure control valve 109. Under normal operating conditions, the pressure control valve 109 is heated to suppress deposit accumulation; under cleaning conditions, the pressure control valve 109 is cooled to prevent high-temperature plasma from causing valve plate blackening or sealing ring deformation, thereby maintaining the adjustment accuracy and sealing reliability of the pressure control valve 109 and extending its service life.

[0044] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0045] In the description of this utility model, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0046] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0047] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0048] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A semiconductor exhaust gas treatment system, characterized in that, include: An exhaust pipe is provided, one end of which is connected to a semiconductor process chamber; a pressure control valve is provided on the exhaust pipe, and multiple joints are provided at intervals along the exhaust path; a first isolation valve is provided on the exhaust pipe upstream of the pressure control valve, and at least one joint is provided on the exhaust pipe between the first isolation valve and the pressure control valve; A plasma cleaning mechanism includes a remote plasma source, a gas supply assembly, and a gas channel; the gas supply assembly is connected to the remote plasma source to supply etching gas to the remote plasma source; the remote plasma source is used to ionize the etching gas; one end of the gas channel is connected to the remote plasma source, and the other end is detachably connected to any of the said joints via a connector.

2. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The semiconductor exhaust gas treatment system further includes a heat exchange mechanism, which comprises: A heat exchange sleeve is fitted onto the pressure control valve for heat exchange with the pressure control valve; a heat exchange medium supply assembly is connected to the heat exchange sleeve for supplying heat exchange medium to the heat exchange sleeve.

3. The semiconductor exhaust gas treatment system as described in claim 2, characterized in that, The heat exchange mechanism also includes: A temperature measuring component is disposed on the pressure control valve for measuring the temperature inside the valve chamber of the pressure control valve; the temperature measuring component is communicatively connected to the heat exchange medium supply component for feeding back the measured temperature data to the heat exchange medium supply component, and the heat exchange medium supply component is configured to adjust the temperature of the heat exchange medium based on the temperature data.

4. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The semiconductor exhaust gas treatment system also includes a vacuum generating component, which is connected to the other end of the exhaust pipe.

5. The semiconductor exhaust gas treatment system as described in claim 4, characterized in that, The semiconductor exhaust gas treatment system further includes an exhaust gas processor, which is connected to the vacuum generating component. The exhaust gas processor is connected to the exhaust pipe via a gas pipeline, and a pneumatic valve is provided on the gas pipeline to prevent exhaust gas in the exhaust gas processor from flowing back into the exhaust pipe.

6. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The connector has a first flange at its end away from the gas passage; the joint includes an angle valve, one end of which has a second flange; the connector is detachably connected to the angle valve via the mating of the first flange and the second flange.

7. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The connector includes a metal bellows.

8. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The semiconductor exhaust gas treatment system further includes a mobile platform for carrying the plasma cleaning mechanism and moving the plasma cleaning mechanism to a location adjacent to different joints.

9. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The gas supply assembly includes a first gas source and a second gas source, which are respectively connected to the remote plasma source. The first gas source is configured to supply etching gas to the remote plasma source, and the second gas source is configured to supply carrier gas to the remote plasma source.

10. The semiconductor exhaust gas treatment system as described in claim 1, characterized in that, The gas passage is equipped with a second isolation valve, which is used to close or open the gas passage.

11. The semiconductor exhaust gas treatment system as described in claim 4, characterized in that, The vacuum generating assembly includes a dry vacuum pump.

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