Wafer nondestructive separation device

Abstract

The utility model discloses a kind of wafer non-destructive separation devices, it is related to semiconductor equipment technical field, comprising: support part, at least one support area is provided on its surface, support area is used to be attached with wafer by hot melt structure, first support interval is opened on support area, and first support interval is located in the range covered by wafer;At least one jacking mechanism, it is movably arranged along the direction perpendicular to the surface of support part, and after passing through corresponding first support interval from the side of support part away from wafer, the position of each wafer is synchronously jacked up;Jacking mechanism is connected with the drive mechanism that drives its action;Heating unit, it is connected with support part, and heat conduction to support part, and heating unit is provided with the interval for jacking mechanism action, ensure that wafer does not break and generate relative displacement when separating from support part, to ensure wafer surface quality.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a wafer non-destructive separation device. Background Technology

[0002] Currently, the general method for unloading gallium oxide wafers is as follows: before polishing, wax is applied to a ceramic disk. After polishing, the ceramic disk is placed on a heating platform and left to melt for a period of time. Then, a spatula is used to gently push the edge of the wafer to expose it outside the ceramic disk. Finally, tweezers are used to hold the wafer and lift it upwards.

[0003] However, when gently pushing the edge of the wafer with a spatula, the back of the wafer is easily scratched due to the relative displacement between the wafer and the ceramic disk; and when using tweezers to hold the wafer and lift it upwards, the wafer is prone to cleaving along the cleavage plane. Utility Model Content

[0004] The purpose of this invention is to provide a non-destructive wafer separation device to solve the problems existing in the prior art, ensuring that the wafer will not break or undergo relative displacement when separated from the support, thereby ensuring the surface quality of the wafer.

[0005] To achieve the above objectives, this utility model provides the following solution: This utility model provides a wafer non-destructive separation device, comprising: A support portion, having at least one support area on its surface, the support area being bonded to the wafer via a thermal fusion structure, the support area having a first support interval, the first support interval being located within the area covered by the wafer; At least one lifting mechanism is movably disposed in a direction perpendicular to the surface of the support portion, and after passing through the corresponding first support interval from the side of the support portion away from the wafer, it simultaneously lifts up each position of the wafer; the lifting mechanism is connected to a drive mechanism that drives its operation. A heating unit is connected to the support portion and conducts heat to the support portion, and the heating unit is provided with a clearance interval for the lifting mechanism to operate.

[0006] Optionally, the structure of the first support interval is matched with the structure of the lifting mechanism.

[0007] Optionally, the first support interval includes a plurality of first interval portions, each of which is evenly distributed within the area covered by the wafer, and the lifting mechanism is provided with a plurality of lifting portions, each of which passes through each of the first interval portions.

[0008] Optionally, each of the first intervals is divided into a support column and at least two support arc plates. The support column is supported at the center of the wafer end face, and the support arc plates are equally spaced around the outer periphery of the support column and are supported at the outer periphery edge of the wafer end face.

[0009] Optionally, the hot-melt structure is made of hot-melt wax.

[0010] Optionally, the end of the lifting mechanism that contacts the wafer is provided with an array of negative pressure adsorption holes, and the lifting mechanism has a built-in negative pressure adsorption channel that communicates with the negative pressure adsorption holes, and the negative pressure adsorption channel is connected to a negative pressure generator.

[0011] Optionally, the heating unit has a heating surface, and the support part has a plate-like structure, with its side facing away from the wafer attached to the heating surface.

[0012] Optionally, the yielding interval includes: At least one second support interval is provided, each second support interval is provided on the heating unit and is connected to each first support interval. The lifting mechanism passes through the corresponding second support interval and the first support interval sequentially from the side of the heating unit away from the support part.

[0013] Optionally, a positioning pin is provided between the heating unit and the support portion.

[0014] Optionally, a temperature sensor is connected to the surface of the support portion used to support the wafer, and the temperature sensor is electrically connected to the heating unit via a controller.

[0015] The present invention achieves the following technical advantages over the prior art: The wafer non-destructive separation device disclosed in this utility model utilizes a lifting mechanism and a first support interval formed on the support portion. After the heating unit melts the hot-melt structure, the hot-melt structure no longer binds the wafer. Driven by the driving mechanism, the lifting mechanism passes through the first support interval and can simultaneously lift various positions of the wafer. This allows each position of the wafer to simultaneously detach from the support area, eliminating the need to push the wafer edge using existing technology to expose it outside the support portion. This avoids the situation where the back of the wafer is easily scratched due to relative displacement between the wafer and the support portion during the wafer pushing process. Furthermore, since each position of the wafer detaches from the support area simultaneously, there is no need to use tweezers to hold the wafer and lift it upwards, avoiding the situation where the wafer is easily cleaved along the cleavage plane. This comprehensively ensures the surface quality of the wafer. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the overall structure of a wafer non-destructive separation device in one example disclosed in this utility model. Figure 1 ; Figure 2 This is an isometric view of the lifting mechanism in one example disclosed in this utility model; Figure 3 This is a front view of the lifting mechanism in one example disclosed in this utility model; Among them, 1-support part, 2-heating unit, 3-positioning pin, 4-support area, 5-lifting mechanism, 6-wafer, 7-support column, 8-support arc plate, 9-negative pressure adsorption hole. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0019] The purpose of this invention is to provide a non-destructive wafer separation device to solve the problems existing in the prior art, ensuring that the wafer will not break or undergo relative displacement when separated from the support, thereby ensuring the surface quality of the wafer.

[0020] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0021] like Figures 1 to 3As shown, this utility model provides a non-destructive wafer separation device, including a support part 1, a heating unit 2, and at least one lifting mechanism 5. The support part 1 has at least one support area 4 on its surface, which is used to bond with a wafer 6 via a hot-melt structure. The hot-melt structure can be hot-melt wax, or a hot-melt polymer adhesive. A first support interval is formed on the support area 4, located within the area covered by the wafer 6. The wafer 6 is bonded to the support area 4 via the hot-melt structure. The support part 1 supports the wafer 6 and performs machining processes such as polishing. To ensure stable support and uniform heat conduction for the wafer 6, the support part 1 is preferably made of, but not limited to, ceramic material. Ceramic material is corrosion-resistant and can be cleaned with various organic solvents without being corroded. The lifting mechanism 5 is perpendicular to the support part. The surface direction is movable, and after passing through the corresponding first support interval from the side of the support part 1 away from the wafer 6, it synchronously lifts the wafer 6 to various positions. Specifically, the wafer 6 is attached to the support area 4. When the wafer 6 moves synchronously with the lifting mechanism 5, it can maintain the state of being attached to the support area 4. The lifting mechanism 5 is connected to a drive mechanism that drives its movement. The drive mechanism can be a cylinder, hydraulic cylinder, or lead screw and slide rod drive mechanism, etc. The heating unit 2 is connected to the support part 1 and conducts heat to the support part 1 so that when separating the wafer 6 from the support part 1, it can preheat the hot melt structure and melt it, so that the hot melt structure no longer binds the wafer 6, making it convenient for the lifting mechanism 5 to drive the wafer 6 to move and detach it from the support part 1. The heating unit 2 is provided with a clearance interval for the lifting mechanism 5 to move, thereby facilitating the movement of the lifting mechanism 5 and ensuring that it can stably lift the wafer 6.

[0022] The wafer non-destructive separation device disclosed in this utility model utilizes a lifting mechanism 5 and a first support interval formed on the support portion 1. After the heating unit 2 melts the hot-melt structure, the hot-melt structure no longer binds the wafer 6. Driven by the driving mechanism, the lifting mechanism 5 passes through the first support interval and can simultaneously lift various positions of the wafer 6, allowing each position of the wafer 6 to simultaneously detach from the support area 4. This eliminates the need to use existing technology to push the edge of the wafer 6 to protrude outside the support portion 1, avoiding the situation where the back of the wafer 6 is easily scratched due to relative displacement between the wafer 6 and the support portion 1 during the pushing process. Furthermore, since each position of the wafer 6 detaches from the support area 4 simultaneously, it is also unnecessary to use tweezers to hold the wafer 6 and lift it upwards, avoiding the situation where the wafer 6 is easily cleaved along the cleavage plane, thus comprehensively ensuring the surface quality of the wafer 6.

[0023] In this embodiment, the support portion 1 has multiple support areas 4 arrayed on its surface, such as a circular array or a rectangular array, so that multiple wafers 6 can be simultaneously bonded to the support portion 1, thereby enabling the processing of multiple wafers 6 to be completed simultaneously; and each support area 4 is provided with a first support interval, and each lifting mechanism 5 is respectively provided corresponding to each first support interval, so that after the hot melt structure is heated and melted, each wafer 6 can be simultaneously lifted by each lifting mechanism 5, thereby improving the processing and separation efficiency of the wafers 6.

[0024] In some cases, to ensure the stability of the lifting mechanism 5 during movement, the structure of the first support interval is matched with the structure of the lifting mechanism 5. The first support interval is used to limit and guide the lifting mechanism 5, thereby ensuring that the wafer 6 separates synchronously from the support area 4 at various positions. Furthermore, by matching the structure of the first support interval with the structure of the lifting mechanism 5, it is prevented that the molten structure may easily fall out of the gap between the first support interval and the lifting mechanism 5 after molten metal is melted, thus reducing the impact on other mechanisms.

[0025] In other cases, the lifting mechanism 5 is equipped with a frame, which is located on the side of the support part 1 away from the wafer 6. The lifting mechanism 5 is movably mounted on the frame via a slide rail or the like, so that it can move along the slide rail under the driving action of the drive mechanism, thereby stably passing through the first support interval and ensuring the stability of lifting the wafer 6.

[0026] To ensure that the support area 4 effectively supports the wafer 6 for polishing, the first support interval includes multiple first interval sections, each evenly distributed within the area covered by the wafer 6. This avoids insufficient number or excessive size of the first support intervals, which could easily damage the wafer 6 during polishing. Furthermore, to facilitate stable and balanced lifting of the wafer 6, the lifting mechanism 5 has multiple lifting sections, each corresponding to a first interval section. Each lifting section moves synchronously with the main structure of the lifting mechanism 5, providing uniform support to the wafer 6 and ensuring that all positions of the wafer 6 can simultaneously detach from the support area 4.

[0027] In one embodiment, each first interval is divided into a support column 7 and at least two support arc plates 8. The support column 7 is supported at the center of the end face of the wafer 6, and each support arc plate 8 is equally spaced around the outer periphery of the support column 7 and is supported at the outer periphery of the end face of the wafer 6. This allows the center and outer periphery of the wafer 6 to be lifted simultaneously, so that all positions of the wafer 6 move synchronously.

[0028] In some cases, the lifting mechanism 5 moves vertically and its speed is precisely controlled so that the lifting mechanism 5 can stably lift the wafer 6 after passing through the first support interval.

[0029] In other cases, to avoid restricting the direction of lifting the wafer 6, the end of the lifting mechanism 5 that contacts the wafer 6 is provided with an array of negative pressure adsorption holes 9. The lifting mechanism 5 has a built-in negative pressure adsorption channel that is connected to the negative pressure adsorption holes 9. The negative pressure adsorption channel is connected to a negative pressure generator to generate negative pressure, which is conducted through the negative pressure adsorption channel and the negative pressure adsorption holes 9, so that the wafer 6 is adsorbed on the lifting mechanism 5, further avoiding the wafer 6 from easily slipping between itself and the lifting mechanism 5 during the lifting process.

[0030] The negative pressure generator uses a vacuum pump and is connected to the negative pressure adsorption channel via a flexible hose.

[0031] Furthermore, the heating unit 2 is provided with a heating surface, and the support part 1 has a plate-like structure. The side of the support part 1 facing away from the wafer 6 is attached to the heating surface so as to conduct heat to the support part 1 through surface-to-surface contact, thereby ensuring the uniformity of heating of the support part 1. Heating wires or heating tubes are evenly distributed inside the heating unit 2.

[0032] In this embodiment, the clearance interval includes at least one second support interval. Each second support interval is opened on the heating unit 2 and is connected to each first support interval. The lifting mechanism 5 passes through the corresponding second support interval and the first support interval in sequence from the side of the heating unit 2 away from the support part 1 to lift the wafer 6, and avoids positional interference with the lifting mechanism 5. Furthermore, by setting each second support interval, the support part 1 is heated as uniformly as possible.

[0033] To ensure the uniformity of heating of the support part 1 by the heating unit 2, and in conjunction with the embodiment in which the first support interval includes multiple first interval segments and the lifting mechanism 5 is provided with multiple lifting segments, the structure of the second support interval matches the structure of the first support interval. That is, the second support interval includes multiple second interval segments and is connected to each corresponding first interval segment, so that each lifting segment can synchronously pass through each second interval segment and the first interval segment.

[0034] The heating unit 2 and the support part 1 are provided with positioning pins 3 so that the heating unit 2 and the support part 1 are positioned by positioning pins 3, thereby ensuring that the first support interval and the second support interval are set relative to each other. Multiple positioning pins 3 can be provided and are evenly distributed along the circumference of the support part 1 to ensure the effectiveness of positioning the heating unit 2 and the support part 1.

[0035] Furthermore, a temperature sensor is connected to the surface of the support part 1 that supports the wafer 6. The temperature sensor is electrically connected to the heating unit 2 through a controller so that the temperature of the support part 1 can be detected by the temperature sensor. After the temperature and time required for the hot-melt structure to be melted are reached, the power supply to the heating unit 2 is disconnected by the controller to avoid losses caused by continuous heating.

[0036] The wafer non-destructive separation device disclosed in this utility model is used as follows: Wafer 6 is attached to support area 4 of support part 1. After polishing, support part 1 is placed on heating unit 2 and positioned by positioning pin 3. Heating unit 2 is turned on and heating begins. After the thermoplastic structure melts, for example at 140 degrees Celsius, it usually takes about 10 minutes. Then, the power control switch is turned on, and lifting mechanism 5 slowly rises under the action of drive mechanism. At the same time, negative pressure generator is turned on to generate negative pressure. When lifting mechanism 5 contacts the bottom of wafer 6, lifting mechanism 5 adheres to the wafer. Under the continuous adsorption action of negative pressure adsorption hole 9 by negative pressure generator, negative pressure is formed in the negative pressure adsorption channel inside lifting mechanism 5. Wafer 6 is firmly fixed by atmospheric pressure to the surface of lifting mechanism 5 with negative pressure adsorption hole 9. At this time, lifting mechanism 5 continues to rise under the action of drive mechanism, slowly lifting wafer 6. Under negative pressure, the surface of lifting mechanism 5 adsorbs wafer 6 through negative pressure, ensuring that wafer 6 does not slip. As the lifting mechanism 5 rises to the predetermined height, it remains stationary under the action of the drive mechanism. The heating unit 2 is then turned off, and after the wafer 6 cools down, the negative pressure is turned off, and the wafer 6 is manually removed. Throughout the process, the temperature of the heating unit 2, the lifting speed of the lifting mechanism 5, and the pressure of the negative pressure adsorption need to be precisely controlled to ensure that the wafer 6 does not crack or undergo relative displacement during the lifting process, thereby ensuring the surface quality of the wafer 6.

[0037] Any adaptive changes made according to actual needs are within the protection scope of this utility model.

[0038] It should be noted that, for those skilled in the art, it is obvious that this utility model is not limited to the details of the above exemplary embodiments, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this utility model. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of this utility model is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this utility model. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0039] This utility model uses specific examples to illustrate its principles and implementation methods. The above description of the embodiments is only for the purpose of helping to understand the method and core idea of ​​this utility model. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the idea of ​​this utility model. In summary, the content of this specification should not be construed as a limitation of this utility model.

Claims

1. A wafer non-destructive separation device, characterized in that, include: A support portion, having at least one support area on its surface, the support area being bonded to the wafer via a thermal fusion structure, the support area having a first support interval, the first support interval being located within the area covered by the wafer; At least one lifting mechanism is movably disposed in a direction perpendicular to the surface of the support portion, and after passing through the corresponding first support interval from the side of the support portion away from the wafer, it simultaneously lifts up each position of the wafer; the lifting mechanism is connected to a drive mechanism that drives its operation. A heating unit is connected to the support portion and conducts heat to the support portion, and the heating unit is provided with a clearance interval for the lifting mechanism to operate.

2. The wafer non-destructive separation device according to claim 1, characterized in that, The structure of the first support interval is matched with the structure of the lifting mechanism.

3. The wafer non-destructive separation device according to claim 1, characterized in that, The first support interval includes a plurality of first interval portions, each of which is evenly distributed within the area covered by the wafer. The lifting mechanism is provided with a plurality of lifting portions, each of which passes through each of the first interval portions.

4. The wafer non-destructive separation device according to claim 3, characterized in that, Each of the first intervals is divided into a support column and at least two support arc plates. The support column is supported at the center of the wafer end face, and the support arc plates are equally spaced around the outer periphery of the support column and are supported at the outer periphery edge of the wafer end face.

5. The wafer non-destructive separation device according to claim 1, characterized in that, The hot-melt structure uses hot-melt wax.

6. The wafer non-destructive separation device according to claim 1, characterized in that, The end of the lifting mechanism that contacts the wafer has an array of negative pressure adsorption holes. The lifting mechanism has a built-in negative pressure adsorption channel that communicates with the negative pressure adsorption holes. The negative pressure adsorption channel is connected to a negative pressure generator.

7. The wafer non-destructive separation device according to claim 1, characterized in that, The heating unit has a heating surface, and the support part has a plate-like structure, with its side away from the wafer attached to the heating surface.

8. The wafer non-destructive separation device according to claim 7, characterized in that, The yielding interval includes: At least one second support interval is provided, each second support interval is provided on the heating unit and is connected to each first support interval. The lifting mechanism passes through the corresponding second support interval and the first support interval sequentially from the side of the heating unit away from the support part.

9. The wafer non-destructive separation device according to claim 8, characterized in that, A positioning pin is provided between the heating unit and the support part.

10. The wafer non-destructive separation device according to claim 1, characterized in that, A temperature sensor is connected to the surface of the support portion used to support the wafer, and the temperature sensor is electrically connected to the heating unit via a controller.

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