Gas supply device and thin film deposition apparatus
Patent Information
- Application Number
- CN202522575382.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-03
- Publication Date
- 2026-11-03
- Estimated Expiration
- 2035-12-03
AI Technical Summary
In existing gas supply devices, premature contact of process gases during thin film deposition leads to particle deposition, affecting film quality.
Design a gas supply device comprising multiple independent and non-interconnected gas supply channels, each channel having an outlet and an inlet. Process gases are independently transported within the gas supply block and only mixed after exiting the outlet to avoid premature reactions.
Effective isolation of process gases prevents particle deposition and improves film quality.
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Figure CN224930639U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor process equipment, and more specifically, to a gas supply device and a thin film deposition device. Background Technology
[0002] In the semiconductor field, thin film structures can be fabricated using thin film deposition equipment. Thin film deposition equipment that utilizes the principle of vapor deposition typically includes a gas supply device to introduce various process gases into the reaction chamber for reaction deposition. However, when using existing gas supply devices for gas supply and thin film deposition, particle deposition is a common problem; that is, particles generated during the reaction fall onto the areas where the thin film needs to be deposited. The occurrence of particle deposition affects the quality of the thin film. Utility Model Content
[0003] The purpose of this application is to provide a gas supply device and a thin film deposition apparatus to reduce particle deposition problems and improve film quality.
[0004] In a first aspect, this application provides a gas supply device for use in a thin film deposition equipment. The gas supply device includes a gas supply block and multiple gas supply pipelines. Multiple gas supply channels that are not interconnected and not nested within the gas supply block are formed. Each gas supply channel has an outlet and an inlet. The outlets of the multiple gas supply channels are located on the same side of the gas supply block. The multiple gas supply pipelines are connected to the inlets of the multiple gas supply channels one by one. The gas supply pipelines are used to connect to a gas source.
[0005] In an optional implementation, the outlets of the multiple gas supply channels are arranged at intervals along a first direction.
[0006] In an optional embodiment, the outlet of the gas supply channel is a flat opening, and the size of the outlet in the first direction is smaller than the size of the outlet in the second direction, with the second direction perpendicular to the first direction.
[0007] In an alternative implementation, the plurality of outlets includes a central outlet, and the other outlets are arranged circumferentially around the central outlet.
[0008] In an optional implementation, the outlet is a circular opening.
[0009] In an optional embodiment, the gas supply channel includes an expansion section adjacent to the outlet, with the cross-sectional dimensions of the expansion section gradually increasing from the end of the expansion section away from the outlet to the outlet.
[0010] In an optional embodiment, the outer surface of the air supply block includes a front and a back side facing each other and a side side connecting the front and the back side; the outlets of the air supply channels are all located on the front side of the air supply block, the inlets of some air supply channels are located on the back side of the air supply block, and the inlets of other air supply channels are located on the side or edge of the air supply block.
[0011] In an optional embodiment, the air supply channel with the inlet on the side is L-shaped or arc-shaped, the air supply channel with the inlet on the edge surface is zigzag or arc-shaped, and the air supply channel with the inlet on the back is straight.
[0012] In an optional implementation, the gas supply block has four gas supply channels.
[0013] In an optional implementation, the air supply block is a rectangular block, and the outlet of the air supply channel is located on one side of the rectangular block.
[0014] Secondly, this application provides a thin film deposition apparatus, including a reaction chamber, a gas source, and a gas supply device according to any of the foregoing embodiments. The reaction chamber forms a reaction cavity, the gas supply block of the gas supply device is disposed in the reaction chamber and the outlet of the gas supply channel faces the reaction cavity, and multiple gas supply pipelines are connected to multiple gas sources one-to-one.
[0015] The beneficial effects of the embodiments of this application are as follows: The gas supply device provided in this embodiment includes a gas supply block and multiple gas supply pipelines. Multiple independent and non-nested gas supply channels are formed within the gas supply block. Each gas supply channel has an outlet and an inlet. The outlets of the multiple gas supply channels are located on the same side of the gas supply block. The multiple gas supply pipelines are connected one-to-one with the inlets of the multiple gas supply channels, and the gas supply pipelines are used to connect to a gas source. By making each gas supply channel independent and non-nested, the process gases can be effectively isolated during transport within the gas supply block. They can only come into contact with each other after being discharged from the outlet of the gas supply channel into the reaction chamber. This avoids premature contact and reaction between different process gases to form particles, thereby alleviating the problem of particle deposition and improving membrane quality.
[0016] The thin film deposition apparatus provided in this application includes the gas supply device described above, thus improving the problem of particle deposition and enhancing the quality of the thin film. Attached Figure Description
[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is a schematic diagram of the gas supply device provided in the first embodiment of this application; Figure 2 for Figure 1 A sectional view along direction A. Figure 3 for Figure 1A sectional view along the B direction; Figure 4 for Figure 1 A sectional view along the C-direction; Figure 5 This is a schematic diagram of the gas supply device provided in the second embodiment of this application; Figure 6 for Figure 5 A sectional view along direction A. Figure 7 for Figure 5 A sectional view along the B direction; Figure 8 for Figure 5 A cross-sectional view along the C-direction.
[0019] Icons: 100 - Gas supply block; 101 - Front; 102 - Back; 103 - First side; 104 - Second side; 105 - Third side; 106 - Fourth side; 110 - First gas supply channel; 111 - First inlet; 112 - First outlet; 120 - Second gas supply channel; 121 - Second inlet; 122 - Second outlet; 130 - Third gas supply channel; 131 - Third inlet; 132 - Third outlet; 140 - Fourth gas supply channel; 141 - Fourth inlet; 142 - Fourth outlet; 150 - Outer expansion section; 210 - First gas supply pipeline; 220 - Second gas supply pipeline; 230 - Third gas supply pipeline; 240 - Fourth gas supply pipeline. Detailed Implementation
[0020] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0021] In the description of this application, it should be noted that the terms "inner" and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0022] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0023] In related technologies, the gas supply device of thin film deposition equipment has multiple gas supply channels that are interconnected within the device. Therefore, different process gases will come into contact and mix within the device before being discharged to the reaction chamber. Premature contact between different process gases can easily lead to the formation of particles, which deposit at the location of the film to be deposited, becoming impurities and affecting the quality of the film.
[0024] To address this, embodiments of this application provide a gas supply device. By establishing independent gas supply channels, the process gases do not come into contact with each other before flowing out of the gas supply device, thus avoiding premature reaction and particle deposition, and improving film quality. Furthermore, embodiments of this application also provide a thin film deposition apparatus, including the aforementioned gas supply device.
[0025] Figure 1 This is a schematic diagram of a gas supply device provided in the first embodiment of this application. Figure 1 As shown, the gas supply device provided in this embodiment can be applied to thin film deposition equipment. The gas supply device includes a gas supply block 100 and multiple gas supply pipelines. Multiple non-interconnected and non-nested gas supply channels are formed within the gas supply block 100. Each gas supply channel has an outlet and an inlet. The outlets of the multiple gas supply channels are located on the same side of the gas supply block 100. The multiple gas supply pipelines are connected one-to-one with the inlets of the multiple gas supply channels, and are used to connect to a gas source. In this embodiment, the gas supply pipelines can input process gas from the inlet of the gas supply channel into the gas supply channel, and the process gas is sent out from the outlet of the gas supply channel to the reaction chamber. The gas supply block 100 integrates multiple gas supply channels, thus allowing the supply of different process gases to the reaction chamber. Since each gas supply channel is independent, they do not contact each other within the gas supply block 100, thereby preventing the process gases from reacting within the gas supply block 100 (or the gas supply device) to generate particles. It should be understood that nested air supply channels refer to one air supply channel surrounding another, with the outer air supply channel having a ring-shaped cross-section. In this embodiment, the two different air supply channels are not nested, allowing the outlets of multiple air supply channels to be discretely arranged on the surface of the air supply block 100.
[0026] exist Figure 1In the illustrated embodiment, the outlets of multiple gas supply channels are located on the same side of the gas supply block 100, allowing the process gases output from different gas supply channels to be directed in the same direction, thereby reaching the target deposition location for reaction deposition. Specifically, in this embodiment, the gas supply block 100 is a rectangular block, and the outlets of the gas supply channels are located on one side of the rectangular block.
[0027] Furthermore, the outer surface of the air supply block 100 includes a front side 101 and a back side 102 facing each other, as well as a side connecting the front side 101 and the back side 102. The outlets of the air supply channels are all located on the front side 101 of the air supply block 100, some of the inlets of the air supply channels are located on the back side 102 of the air supply block 100, and the inlets of other air supply channels are located on the side of the air supply block 100. In this embodiment, the air supply block 100 is a rectangular block, therefore having four sequentially connected side surfaces, one or more of which can be used as inlets for the air supply channels. For ease of description, the four side surfaces are defined as the first side surface 103, the second side surface 104, the third side surface 105, and the fourth side surface 106, where the first side surface 103 and the second side surface 104 are two side surfaces of the air supply block 100 spaced apart in the second direction, and the third side surface 105 and the fourth side surface 106 are two side surfaces of the air supply block 100 spaced apart in the first direction.
[0028] It should be understood that this embodiment uses a rectangular block as an example for describing the air supply block 100. In other optional embodiments, the shape of the air supply block 100 can be adjusted as needed. For example, a chamfered bevel or edge surface is provided between the front side 101 and each side side, and the outlet of the air supply channel can be provided not only on the front side 101 but also on the edge surface; or, for example, the air supply block 100 can be cylindrical, and the outlet of the air supply channel can be provided on the end face of one axial end of the air supply block 100, while the inlet of the air supply channel can be provided on the other end face or the outer peripheral surface of the air supply block 100.
[0029] Specifically, in this embodiment, the gas supply block 100 has four gas supply channels; in other optional embodiments, the number of gas supply channels can be increased or decreased as needed, such as three, five, six or more. For ease of description, the four gas supply channels are named as First Gas Supply Channel 110, Second Gas Supply Channel 120, Third Gas Supply Channel 130, and Fourth Gas Supply Channel 140, respectively. The outlets corresponding to First Gas Supply Channel 110, Second Gas Supply Channel 120, Third Gas Supply Channel 130, and Fourth Gas Supply Channel 140 are named First Outlet 112, Second Outlet 122, Third Outlet 132, and Fourth Outlet, respectively. The outlets corresponding to First Gas Supply Channel 110, Second Gas Supply Channel 120, Third Gas Supply Channel 130, and Fourth Gas Supply Channel 140 are named First Inlet 111, Second Inlet 121, Third Inlet 131, and Fourth Inlet, respectively. The gas supply pipelines connecting First Inlet 111, Second Inlet 121, Third Inlet 131, and Fourth Inlet are named First Gas Supply Pipeline 210, Second Gas Supply Pipeline 220, Third Gas Supply Pipeline 230, and Fourth Gas Supply Pipeline, respectively.
[0030] The outlets of multiple gas supply channels are arranged at intervals along the first direction. Figure 1 In the middle, the first direction is the up and down direction, and the first air supply channel 110, the second air supply channel 120, the third air supply channel 130 and the fourth air supply channel 140 are arranged in order from bottom to top. Figure 2 for Figure 1 A sectional view along direction A. Figure 3 for Figure 1 A sectional view along the B direction; Figure 3 for Figure 1 A sectional view along the C-direction. (Combined with...) Figures 1 to 4 In this embodiment, the first inlet 111 and the fourth inlet are located on the back side 102 of the air supply block 100; the second inlet 121 is located on the second side side 104 of the air supply block 100; and the third inlet 131 is located on the first side side 103 of the air supply block 100. By placing the inlets of the air supply channels on three sides of the air supply block 100, the surface area of the air supply block 100 can be utilized to a greater extent for the installation of the air supply pipelines, preventing congestion of the air supply pipelines at the air supply block 100; it also satisfies the requirement that each air supply channel is independent. In other optional embodiments, the inlets of the air supply channels can also be arranged on the third side side 105 and the fourth side side 106.
[0031] In this embodiment, the air supply channels with inlets located on the sides (specifically, the second air supply channel 120 and the third air supply channel 130) are L-shaped, meaning their extension direction changes by 90° within the air supply block 100. If the inlet is located on an edge surface (not shown), the extension direction changes by 120°-150° (e.g., 135°) within the air supply block 100, and the air supply channel can be a zigzag or arc-shaped channel. Furthermore, the air supply channels with inlets located on the back (specifically, the first air supply channel 110 and the fourth air supply channel 140) are straight, meaning their extension direction does not change within the air supply block 100. In other optional embodiments, the air supply channels with inlets located on the sides can also be arc-shaped.
[0032] In this embodiment, the outlet of the gas supply channel is a flat opening, and the size of the outlet in the first direction is smaller than the size of the outlet in the second direction, with the second direction perpendicular to the first direction. Since the first outlet 112, the second outlet 122, the third outlet 132, and the fourth outlet 142 are all located on the front surface 101 of the gas supply block 100 and arranged along the first direction, by lengthening the size of each outlet in the second direction, the front surface 101 of the gas supply block 100 can be fully utilized for gas supply. The combined size of the multiple outlets in the first and second directions is similar, resulting in a more uniform output of process gas in both directions. Optionally, the two edges of the outlet in the second direction are arc-shaped, i.e., the outlet is a waist-shaped opening.
[0033] like Figures 2 to 4 As shown, in this embodiment, the gas supply channel includes an expansion section 150 adjacent to the outlet. From the end of the expansion section 150 furthest from the outlet to the outlet, the cross-sectional size of the expansion section 150 gradually increases. By providing the expansion section 150, the process gas can diffuse smoothly when it is delivered from the outlet of the gas supply channel, which is beneficial for sufficient contact between process gases delivered from different outlets, thereby improving the efficiency of reactive deposition. Optionally, the cross-sectional area of the downstream end of the expansion section 150 (i.e., the area of the outlet) is 2 to 8 times the cross-sectional area of the upstream end of the expansion section 150.
[0034] Figure 5 This is a schematic diagram of the gas supply device provided in the second embodiment of this application; Figure 6 for Figure 5 A sectional view along direction A. Figure 7 for Figure 5 A sectional view along the B direction; Figure 8 for Figure 5 A sectional view along the C-direction. (e.g.) Figures 5 to 8 As shown, the layout of the gas supply channels is different from that of... Figures 1 to 4The first embodiment shown has been modified. In this embodiment, the plurality of outlets includes a central outlet, and the other outlets are arranged circumferentially around the central outlet. Specifically, the gas supply block 100 in this embodiment also has four gas supply channels. The first outlet 112 of the first gas supply channel 110 is the central outlet, and the second outlet of the second gas supply channel 120, the third outlet 132 of the third gas supply channel 130, and the fourth outlet 142 of the fourth gas supply channel 140 are arranged circumferentially around the first outlet 112.
[0035] Optionally, the second outlet, the third outlet 132, and the fourth outlet 142 are evenly spaced in the circumferential direction, i.e., spaced 120° apart. In this embodiment, the layout of each outlet is rotationally symmetrical, which is beneficial for the uniform distribution of process gas in the reaction chamber.
[0036] The air supply block 100 in this embodiment is a rectangular block similar to that in the first embodiment, having a front side 101, a back side 102, and a first side 103, a second side 104, a third side 105, and a fourth side 106. The first side 103 and the second side 104 are two sides of the air supply block 100 spaced apart in a second direction, and the third side 105 and the fourth side 106 are two sides of the air supply block 100 spaced apart in a first direction. The outlets of multiple air supply channels are all located on the front side 101 of the air supply block 100, the first inlet 111 is located on the back side 102, the second and third inlets 131 are located on the first side 103 and spaced apart in the first direction, and the fourth inlet 141 is located on the second side 104. In other optional embodiments, the inlets of the air supply channels may also be arranged on the third side 105 and the fourth side 106. The gas supply lines connecting the first inlet 111, the second inlet 121, the third inlet 131 and the fourth inlet are, in sequence, the first gas supply line 210, the second gas supply line 220, the third gas supply line 230 and the fourth gas supply line 240.
[0037] In this embodiment, the second air supply channel 120, the third air supply channel 130, and the fourth air supply channel 140 are L-shaped, meaning their extension directions change by 90° within the air supply block 100; the first air supply channel 110 is straight, meaning its extension direction does not change within the air supply block 100. In other embodiments, the second air supply channel 120, the third air supply channel 130, and the fourth air supply channel 140 may also be arc-shaped.
[0038] In this embodiment, the outlets of each air supply channel are circular. In other optional embodiments, the outlets of the air supply channels can also be configured with other shapes, such as arc-shaped openings extending around the central outlet, except for the central outlet.
[0039] Similar to the first embodiment, in this embodiment, the gas supply channel includes an expansion section 150 adjacent to the outlet. From the end of the expansion section 150 furthest from the outlet to the outlet, the cross-sectional size of the expansion section 150 gradually increases. By providing the expansion section 150, it is beneficial for the process gas entering the reaction chamber from each outlet to diffuse evenly.
[0040] This application embodiment also provides a thin film deposition apparatus (not shown in the figure), which includes a reaction chamber, a gas source, and the gas supply device provided in the above embodiment. The reaction chamber forms a reaction cavity, and the gas supply block 100 of the gas supply device is disposed in the reaction chamber with the outlet of the gas supply channel facing the reaction cavity. Multiple gas supply pipelines are connected to multiple gas sources one-to-one. Utilizing the multiple gas supply channels of the gas supply device, multiple gas sources can respectively supply different types of process gases to the reaction cavity; or two or more gas supply channels can be used to supply the same process gas. Since the gas supply block 100 of the gas supply device has multiple gas supply channels, the process gas supply scheme can be flexibly designed in the deposition process. Optionally, the thin film deposition apparatus is an atomic layer deposition apparatus. Atomic layer deposition (ALD) is an advanced thin film preparation technology that decomposes the thin film growth process into a series of self-limiting surface chemical reactions, thereby depositing materials layer by layer in units of single atomic layers. Thin films obtained by atomic layer deposition have excellent uniformity, step coverage, and density, and the film thickness can be precisely controlled. It should be understood that in other embodiments, the thin film deposition apparatus may also be other chemical vapor deposition apparatus that relies on gas-phase reactions for thin film deposition, such as plasma-enhanced chemical vapor deposition (PECVD) apparatus.
[0041] In summary, this application provides a gas supply device and a thin film deposition apparatus. The gas supply device includes a gas supply block 100 and multiple gas supply pipelines. Multiple independent and non-nested gas supply channels are formed within the gas supply block 100. Each gas supply channel has an outlet and an inlet. The outlets of the multiple gas supply channels are located on the same side of the gas supply block 100. The multiple gas supply pipelines are connected one-to-one with the inlets of the multiple gas supply channels, and the gas supply pipelines are used to connect to a gas source. By making each gas supply channel independent and non-nested, the process gases can be effectively isolated during transport within the gas supply block 100. They can only come into contact with each other after being discharged from the outlet of the gas supply channel into the reaction chamber. This avoids premature contact and reaction between different process gases to form particles, thereby alleviating the problem of particle deposition and improving film quality.
[0042] The thin film deposition apparatus provided in this application includes the gas supply device described above, thus improving the problem of particle deposition and enhancing the quality of the thin film.
[0043] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.
[0044] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A gas supply device, applied to a thin film deposition equipment, characterized in that, The gas supply device includes a gas supply block and multiple gas supply pipelines. Multiple non-interconnected and non-nested gas supply channels are formed within the gas supply block. Each gas supply channel has an outlet and an inlet. The outlets of the multiple gas supply channels are located on the same side of the gas supply block. The multiple gas supply pipelines are connected to the inlets of the multiple gas supply channels one-to-one. The gas supply pipelines are used to connect to a gas source.
2. The gas supply device according to claim 1, characterized in that, The outlets of the multiple gas supply channels are arranged at intervals along a first direction.
3. The gas supply device according to claim 2, characterized in that, The outlet of the gas supply channel is a flat opening, and the size of the outlet in the first direction is smaller than the size of the outlet in the second direction, which is perpendicular to the first direction.
4. The gas supply device according to claim 1, characterized in that, The plurality of outlets includes a central outlet, and the other plurality of outlets are arranged circumferentially around the central outlet.
5. The gas supply device according to claim 4, characterized in that, The outlet is circular.
6. The gas supply device according to any one of claims 1-5, characterized in that, The gas supply channel includes an extended section adjacent to the outlet, and the cross-sectional dimensions of the extended section gradually increase from the end of the extended section away from the outlet to the outlet.
7. The gas supply device according to any one of claims 1-5, characterized in that, The outer surface of the air supply block includes a front and a back side facing each other, and a side side connecting the front and the back side; the outlets of the air supply channels are all located on the front side of the air supply block, a portion of the inlets of the air supply channels are located on the back side of the air supply block, and another portion of the inlets of the air supply channels are located on the side or edge of the air supply block.
8. The gas supply device according to claim 7, characterized in that, The air supply channel with the inlet located on the side is L-shaped or arc-shaped, the air supply channel with the inlet located on the edge is zigzag or arc-shaped, and the air supply channel with the inlet located on the back is straight.
9. The gas supply device according to any one of claims 1-5, characterized in that, The gas supply block has four gas supply channels.
10. The gas supply device according to any one of claims 1-5, characterized in that, The gas supply block is a rectangular block, and the outlet of the gas supply channel is located on one side of the rectangular block.
11. A thin film deposition apparatus, characterized in that, The device includes a reaction chamber, a gas source, and a gas supply device according to any one of claims 1-10. The reaction chamber forms a reaction cavity, the gas supply block of the gas supply device is disposed in the reaction chamber and the outlet of the gas supply channel faces the reaction cavity, and a plurality of gas supply pipelines are connected to a plurality of gas sources in a corresponding manner.
