Power semiconductor modules (IGBT)
CN309162866SActive Publication Date: 2025-03-11HAINAN HANGXIN HIGH TECH IND GRP CO LTD
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Patent Information
- Application Number
- CN202430380063.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-20
- Publication Date
- 2025-03-11
- Estimated Expiration
- 2039-06-20
Smart Images
Figure 000007_ABST
Abstract
1. The name of the product of this design: power semiconductor module (IGBT). 2. Purpose of this design product: This design product is used in various conversion devices such as converters, inverters, and frequency converters. 3. The design key point of this appearance design product lies in the shape. 4. The picture or photo that best illustrates the key points of the design: Design 1 Stereoscopic drawing 1. 5. Designate Design 1 as the base design.
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