Physical vapor deposition equipment (laser molecular beam epitaxy / pulsed laser deposition)
CN309485753SActive Publication Date: 2025-09-09UNIV OF SCI & TECH BEIJING
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Patent Information
- Application Number
- CN202430713322.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-09-09
- Estimated Expiration
- 2039-11-12
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Figure 000007_ABST
Abstract
1. Name of the product under this design: Physical vapor deposition device (laser molecular beam epitaxy / pulsed laser deposition). 2. Purpose of the product with this design: The product with this design is used for physical vapor deposition of semiconductor, superconducting and magnetoelectric thin films. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the key points of the design: Design 1 3D drawing. 5. Designate Design 1 as the base design.
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