Radio frequency power supply (CRA F-RFG 1306N)
CN309818148SActive Publication Date: 2026-02-27NAWEI SEMICONDUCTOR TECHNOLOGY (HEFEI) CO LTD
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Patent Information
- Application Number
- CN202530412077.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-15
- Publication Date
- 2026-02-27
- Estimated Expiration
- 2040-07-15
Smart Images
Figure 000001_ABST
Abstract
1. The name of the design product: Radio Frequency Power Supply (CRAF-RFG1306N). 2. The use of the design product: for efficient and controllable generation of plasma, serving semiconductor manufacturing, such as etching, chemical vapor deposition, physical vapor deposition, ion implantation, sputtering and solar cell manufacturing. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.
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