Laser diode device
The laser diode device with a copper-based housing and thick solder layers, combined with a crystalline protective layer, addresses thermal and environmental challenges, achieving optical powers beyond 3 watts and enhancing reliability.
Patent Information
- Application Number
- DE102012102305
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2012-03-19
- Publication Date
- 2025-07-31
- Estimated Expiration
- 2032-03-19
AI Technical Summary
Current laser diodes in standard TO housings made of stainless steel or copper-based materials are limited to optical powers below 3 watts, and increasing the chip area or using copper-based housings does not significantly enhance performance due to thermal management issues and material mismatch.
A laser diode device with a copper-based housing part sheathed in steel, featuring thick solder layers and a crystalline protective layer on the radiation decoupling surface, which compensates for thermal stresses and environmental damage, enhancing optical output power and reliability.
The solution achieves optical output powers exceeding 3 watts with improved thermal conductivity and reliability by compensating for thermal stresses and environmental damage, using a copper-based housing with thick solder layers and a crystalline protective layer.
Smart Images
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Abstract
Claims
[1] Laser diode device, comprising a housing (1) with a housing part (10) and with a mounting part (11) connected to the housing part (10) and extending away from the housing part (10) along an extension direction (110), and a laser diode chip (2) on the mounting part (11), which has semiconductor layers (21, 22, 23, 24) with an active layer (23) for emitting light on a substrate (20), where the housing part (10) and the mounting part (11) have a base body made of copper and at least the housing part (10) is steel-coated, a first solder layer (3) is arranged between the laser diode chip (2) and the mounting part (11), which has a thickness of greater than or equal to 2 µm, the laser diode chip (2) has a radiation coupling-out surface (27) on which a crystalline protective layer (6) is applied, a heat-conducting element (4) is arranged between the laser diode chip (2) and the mounting part (11), and the heat-conducting element (4) is fastened to the mounting part (11) with the first solder layer (3) and the laser diode chip (2) is fastened to the heat-conducting element (4) with a second solder layer (5) which has a thickness of greater than or equal to 2 µm. [2] A laser diode device according to claim 1, wherein the crystalline protective layer (6) is formed by a dielectric material. [3] Laser diode device according to one of the preceding claims, wherein the crystalline protective layer (6) is formed by an oxide. [4] Laser diode device according to one of the preceding claims, wherein the crystalline protective layer (6) comprises a plurality of crystalline layers. [5] Laser diode device according to one of the preceding claims, wherein an optical layer (7) is applied to the radiation coupling-out surface (27). [6] Laser diode device according to claim 5, wherein the optical layer (7) is arranged between the radiation coupling-out surface (27) and the crystalline protective layer (6) and is covered by the crystalline protective layer (6). [7] Laser diode device according to claim 5, wherein the crystalline protective layer (6) is arranged between the radiation coupling-out surface (27) and the optical layer (7). [8] A laser diode device according to claim 5, wherein the optical layer (7) is formed by the crystalline protective layer (6). [9] Laser diode device according to one of the preceding claims, wherein a crystalline protective layer (6) is applied to a rear surface (28) of the laser diode chip (2) opposite the radiation coupling-out surface (27). [10] Laser diode device according to one of the preceding claims, wherein a crystalline protective layer (6) is applied to side surfaces (29) of the laser diode chip (2) which connect the rear surface (28) and the radiation coupling-out surface (27). [11] Laser diode device according to one of the preceding claims, wherein the thickness of the first solder layer (3) is greater than or equal to 3 µm. [12] Laser diode device according to one of the preceding claims, wherein the heat conducting element (4) comprises AlN, SiC, BN, CuW or diamond. [13] Laser diode device according to one of the preceding claims, wherein a housing cover (14) is applied to the housing part (10) and welded to the housing part (10) and the mounting part (11) projects along the extension direction (110) from the housing part (10) into the housing cover (14).
Citation Information
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