Methods for processing a wafer and wafer processing system

Abstract

Method for processing a wafer (2) which has on one side (4) a component area with multiple components separated by multiple parting lines, the method comprising: Attaching one side (4) of the wafer (2) or the side (6) of the wafer (2) opposite one side (4) to an adhesive strip (8) held by a first annular frame (10) such that the wafer (2) is arranged within a central opening (12) of the first annular frame (10); Dividing the wafer (2) along the dividing lines into several chips (20); Arranging the wafer (2) attached to the adhesive strip (8) on a holding surface (14) of a holding element (16) before or after splitting the wafer (2), such that the side of the adhesive strip (8) opposite the side of the same attached to the wafer (2) is in contact with the holding surface (14), wherein an outer diameter of the holding element (16) in the plane of the holding surface (14) is smaller than an inner diameter of the first annular frame (10); After dividing the wafer (2), the first annular frame (10) and at least one circumferential part of the holding element (16) are moved relative to each other in a direction perpendicular to the plane of the holding surface (14) in order to radially widen the adhesive strip (8) in the directions lying in the plane of the holding surface (14), thereby moving the chips (20) away from each other; and Attaching a second annular frame (22) to a section of the expanded adhesive strip (8) arranged on the circumferential part of the retaining element (16), wherein the second annular frame (22) is attached to the side of the adhesive strip (8) that is attached to the wafer (2), and the wafer (2), which has been divided into the multiple chips (20), is arranged within a central opening (24) of the second annular frame (22); wherein an inner diameter of the second annular frame (22) is smaller than the outer diameter of the retaining element (16) in the plane of the retaining surface (14) and smaller than the inner diameter of the first annular frame (10), and the outer diameter of the retaining element (16) in the plane of the retaining surface (14) remains unchanged during the process.

Description

Technical field

[0001] The present invention relates to a method for processing a wafer which has on one side a component area with several components separated by several parting lines. The invention further relates to a wafer processing system for carrying out this method. State of the art

[0002] In a semiconductor device manufacturing process, a wafer, which has a component area with several components separated by several dividing lines, is divided along the dividing lines into individual chips or building blocks.

[0003] Essentially, the same approach as described above is also used to obtain, for example, individual power components, optical components, medical components, electrical components or MEMS components from wafers with component areas in which these components are formed.

[0004] To reduce the strength of the wafer along the parting lines before splitting the wafer, it is known to form a modified region in the wafer along the parting lines. This modified region can be in the form of a modified layer formed within the wafer or in the form of several open regions, each open region consisting of an amorphous region and a free space within the amorphous region that is open to at least one surface of the wafer. Such a modified region is formed by applying a laser beam with a suitable wavelength to the wafer along the parting lines.

[0005] After the modified area has been formed in the wafer along the parting lines, an external force is applied to the wafer in its radial directions, causing the wafer to split along the parting lines and separating the resulting chips or building blocks. In particular, the wafer can be mounted on an expandable belt, and the external force can be applied to it by radially expanding the belt.

[0006] Alternatively, the wafer can be divided into individual chips or components by mechanical cutting, laser cutting, or the application of plasma along the separation lines. Prior to this division process, the wafer can be attached to a tape, such as an adhesive tape.

[0007] Following the separation of the wafer into individual chips or building blocks, the separated chips or building blocks can be picked up from the belt. Alternatively, the chips or building blocks can remain attached to the belt and be processed, stored, or transported in this state. If the separated chips or building blocks are retained attached to the belt, it is important to maintain radial tension on the belt to prevent damage to the chips or building blocks due to unintentional contact between them.

[0008] DE 10 2010 046 665 A1 discloses a method for processing a wafer in which, after chips have been separated from one another by radially expanding an expandable band, an annular band is attached to a circumferential section of the expanded band in order to hold the expanded band under radial tension. The annular band is held by an annular frame.

[0009] However, the approach taught in DE 10 2010 046 665 A1 requires the preparation of an annular frame with a suitably adapted annular band attached to it, making this approach cumbersome and time-consuming. Since the band must be cut into a suitable ring shape, there is significant material loss, leading to increased processing costs. Furthermore, the properties of the annular band must be precisely matched to those of the expandable band, thus limiting the selection of possible band materials. Additionally, the tension of the annular band can decrease over time, creating the risk of unintentional contact between the chips, for example, during storage or transport.

[0010] Therefore, there remains a need for a process for processing a wafer and a wafer processing system that enables the wafer to be processed in an efficient, reliable and cost-effective manner.

[0011] US patent 2014 / 0339673 A1 discloses a method for dividing a wafer into individual chips. In this method, the wafer is attached to an adhesive strip held by a first annular frame. The adhesive strip is then radially expanded by laterally widening a holding table. After the adhesive strip has expanded, a second annular frame can be attached to it. Summary of the invention

[0012] Accordingly, an objective of the present invention is to provide a method for processing a wafer and a wafer processing system that enable the wafer to be processed in an efficient, reliable, and cost-effective manner. This objective is achieved by a wafer processing method having the technical features of claim 1 and a wafer processing system having the technical features of claim 13. Preferred embodiments of the invention are set forth in the dependent claims.

[0013] The invention provides a method for processing a wafer that has a component area on one side with multiple components separated by several parting lines. The method comprises attaching one side of the wafer, or the side of the wafer opposite that side, to an adhesive strip held by a first annular frame, such that the wafer is arranged within a central opening of the first annular frame; dividing the wafer along the parting lines into multiple chips or components; and arranging the wafer attached to the adhesive strip on a holding surface of a holding element before or after dividing the wafer, such that the side of the adhesive strip opposite the side attached to the wafer is in contact with the holding surface.The outer diameter of the holding element in the plane of the holding surface is smaller than the inner diameter of the first annular frame. The adhesive strip is an expandable adhesive strip. The method further comprises, after dividing the wafer, moving the first annular frame and at least one circumferential portion of the holding element relative to each other in a direction perpendicular to the plane of the holding surface, thereby expanding the adhesive strip radially in directions lying in the plane of the holding surface, thus moving the chips or building blocks away from each other, and attaching a second annular frame to a section of the expanded adhesive strip that is arranged on the circumferential portion of the holding element.The second annular frame is attached to the side of the adhesive tape that is bonded to the wafer, and the wafer, which has been divided into multiple chips or building blocks, is positioned within a central opening of the second annular frame. The inner diameter of the second annular frame is smaller than the outer diameter of the holding element in the plane of the holding surface and smaller than the inner diameter of the first annular frame. The outer diameter of the holding element in the plane of the holding surface remains unchanged throughout the process.

[0014] Here, the expression “outer diameter of the retaining element in the plane of the retaining surface” defines the outer diameter of the retaining element in the radial directions of the retaining element.

[0015] According to the processing method of the invention, the second annular frame is attached to the section of the expanded adhesive strip that is arranged on the circumferential part of the holding element, wherein the wafer, which has been divided into the multiple chips or building blocks, is arranged within the central opening of the second annular frame. The inner diameter of the second annular frame is smaller than the outer diameter of the holding element in the plane of the holding surface and smaller than the inner diameter of the first annular frame.

[0016] Therefore, the second ring-shaped frame can be easily attached to the circumferential section of the expanded adhesive tape, reliably maintaining the radial tension of the tape and thus preventing damage to the chips or components due to unintentional contact between them.

[0017] Since no additional tape needs to be prepared to keep the expanded adhesive tape under tension, the efficiency of the processing procedure is significantly improved. Furthermore, there is no material waste, thus minimizing processing costs. In addition, the use of the second ring-shaped frame, which is attached directly to the circumferential section of the expanded adhesive tape, ensures that the tension applied to the expanded tape can be reliably maintained over a longer period.

[0018] Therefore, the processing method of the invention makes it possible to process the wafer in an efficient, reliable and cost-effective manner.

[0019] The wafer can be divided into multiple chips or building blocks, for example, by mechanical cutting or slicing and / or laser cutting or slicing and / or plasma cutting or slicing along the separation lines.

[0020] The wafer can be divided into multiple chips or building blocks along the separation lines in a single mechanical cutting or slicing step, for example by blade cutting or sawing, or in a single laser cutting or slicing step, for example by laser ablation, or in a single plasma cutting or slicing step, for example by using a plasma source.

[0021] The wafer can be divided into multiple chips or building blocks by a sequence of steps involving mechanical cutting or slicing, laser cutting or slicing, and / or plasma cutting or slicing along the parting lines. For example, a laser cutting or slicing step, or a plasma cutting or slicing step, can follow a mechanical cutting or slicing step. Alternatively, a plasma cutting or slicing step can follow a laser cutting or slicing step. The process of dividing the wafer into multiple chips or building blocks along the parting lines can be performed from the side of the wafer opposite the side of the wafer attached to the adhesive tape. Thus, the process of dividing the wafer into multiple chips or building blocks along the parting lines can be performed from the exposed side of the wafer.

[0022] For example, in the process of dividing the wafer along the separation lines into multiple chips or building blocks, a mechanical cutting or dividing device, such as a blade or a saw, and / or a laser beam and / or a plasma can be applied to the exposed side of the wafer.

[0023] In a particularly preferred embodiment, the wafer is divided into several separate chips or components by applying a plasma along the separation lines. In this case, the wafer is completely divided during the plasma application step. For example, the wafer can be cut by plasma cutting.

[0024] Dividing the wafer into separate chips or building blocks by applying plasma enables the formation of narrow cutting edges or grooves between the chips or building blocks. In particular, the cutting edges or grooves obtained in this way are significantly narrower than those achievable through conventional blade cutting processes. Therefore, the number of chips or building blocks that can be obtained from a single wafer can be considerably increased.

[0025] Furthermore, the sidewalls of the resulting chips or components can be plasma-etched during the plasma deposition step. No mechanical cutting stress is applied to the chips or components during the parting process. Therefore, the chip strength is increased.

[0026] Furthermore, the plasma division process is significantly faster than conventional blade or laser cutting methods, especially for small chip sizes, thus further improving the efficiency of the processing method. For example, the plasma division process enables the etching of all parting lines in a single pass.

[0027] After the wafer is split, for example by applying plasma to it, the first annular frame and at least a circumferential portion of the holding element are moved relative to each other in a direction perpendicular to the plane of the holding surface. This expands the adhesive strip radially in the directions that lie in the plane of the holding surface. The chips or components are thus moved away from each other in the radial directions of the wafer, i.e., in the directions that lie in the plane of the holding surface. In this way, the distances between the chips or components are increased. By attaching the second annular frame to the circumferential portion of the expanded adhesive strip, the chips or components are reliably held in their spaced positions, thus preventing damage to the chips or components due to unintentional contact between them.

[0028] The process of dividing the wafer along the dividing lines into multiple chips or building blocks can be carried out from one side of the wafer or from the side of the wafer opposite that side.

[0029] For example, in the process of dividing the wafer along the separation lines into multiple chips or building blocks, a mechanical cutting or dividing agent, such as a blade or a saw, and / or a laser beam and / or a plasma can be applied to one side of the wafer or to the side of the wafer opposite that side.

[0030] One side of the wafer, that is, the front side of the wafer where the component area is formed, can be attached to the adhesive strip held by the first ring-shaped frame. In this case, the mechanical cutting or slicing agent and / or the laser beam and / or the plasma can be applied to the side of the wafer opposite this one side, that is, to the back side of the wafer, in a particularly simple manner.

[0031] Alternatively, the back side of the wafer can be attached to the adhesive strip held by the first ring-shaped frame. In this case, the mechanical cutting or dividing agent and / or the laser beam and / or the plasma can be applied to the front side of the wafer in a particularly simple manner.

[0032] The choice of which side of the wafer is attached to the adhesive tape can be made depending on the material and / or the condition of the wafer.

[0033] As explained above, if the wafer is split by applying plasma to it, the plasma can be applied to the side of the wafer opposite the side attached to the adhesive tape. Thus, the plasma can be applied to the exposed side of the wafer.

[0034] The machining method of the invention can further comprise a grinding step for adjusting the wafer thickness. The grinding step can be performed from the back side of the wafer, which is opposite the front side of the wafer where the component area is formed. The grinding step can be performed before or after the wafer is divided into multiple chips along the parting lines.

[0035] The wafer can be, for example, a semiconductor wafer, a glass wafer, a sapphire wafer, a ceramic wafer, such as an aluminum oxide (Al2O3) ceramic wafer, a silicon oxide (SiO2) wafer, an aluminum nitride (AlN) wafer, or the like.

[0036] In particular, the wafer can be, for example, a silicon (Si) wafer, a gallium arsenide (GaAs) wafer, a gallium nitride (GaN) wafer, a gallium phosphide (GaP) wafer, an indium arsenide (InAs) wafer, an indium phosphide (InP) wafer, a silicon carbide (SiC) wafer, a silicon nitride (SiN) wafer, a lithium tantalate (LT) wafer, a lithium niobate (LN) wafer, or the like.

[0037] The wafer can consist of a single material or a combination of different materials, such as two or more of the materials mentioned above. For example, the wafer can be a silicon-glass composite wafer, where a silicon wafer element is bonded to a glass wafer element.

[0038] The wafer can be a semiconductor-sized wafer. Here, the term "semiconductor-sized wafer" refers to a wafer with the dimensions (standardized dimensions), in particular the diameter (standardized diameter), that is, the outer diameter, of a semiconductor wafer. The dimensions, especially the diameters, that is, the outer diameters, of semiconductor wafers are defined in the SEMI standards. For example, the semiconductor-sized wafer can be a silicon wafer. The dimensions of a polished single-crystal silicon wafer are defined in the SEMI standards M1 and M76. The semiconductor-sized wafer can be a 3-inch, 4-inch, 5-inch, 6-inch, 8-inch, 12-inch, or 18-inch wafer.

[0039] The components formed in the component area on the front of the wafer can be, for example, semiconductor components, power components, optical components, medical components, electrical components, MEMS components or combinations thereof.

[0040] If the adhesive strip is radially expanded in directions lying in the plane of the holding surface, thereby moving the chips away from each other, the side of the wafer not attached to the adhesive strip can be oriented to face upwards or downwards, that is, up or down in the direction of gravity. Having the side of the wafer not attached to the adhesive strip facing downwards ensures particularly reliable protection against particles, such as dirt particles generated during wafer splitting, adhering to the chip surfaces.

[0041] The first and second ring-shaped frames are rigid frames. The first and / or second ring-shaped frames can be made of a metal or a plastic material, such as a polymer.

[0042] The first and / or the second annular frame can have a thickness of at least 2 mm, preferably at least 3 mm, and more preferably at least 4 mm. The first and / or the second annular frame can have a thickness in the range of 2 mm to 12 mm, preferably in the range of 3 mm to 10 mm, and more preferably in the range of 4 mm to 8 mm.

[0043] The adhesive tape can comprise a base layer and an adhesive layer applied to the base layer. The base layer can consist of a polymer material, such as polyvinyl chloride (PVC), ethylene vinyl acetate (EVA), or polyolefin.

[0044] In one embodiment, the wafer attached to the adhesive strip is positioned on the holding surface of the holding element before the wafer is split, and the wafer positioned on the holding surface is then split into multiple chips along the dividing lines. In this case, the same holding element can be used to hold the wafer during the splitting step and to radially expand the adhesive strip, further increasing processing efficiency.

[0045] In another embodiment, the wafer attached to the adhesive strip is positioned on the holding surface of the holding element after the wafer has been split. This approach offers a particularly high degree of flexibility. For example, in this case, a single holding element can be used for, or in combination with, several, such as two or three, splitting means, such as mechanical cutting or dividing means, laser beam application means, or plasma application means, thereby significantly reducing equipment costs.

[0046] Further operations, such as cleaning, or additional operations can be performed on the wafer positioned on the holding surface, for example, before and / or after the adhesive strip has been radially expanded. In this case, the same holding element can be used to hold the wafer during the subsequent operation(s) and to radially expand the adhesive strip, further increasing processing efficiency.

[0047] The holding element can be in the form of a holding table, which, for example, has a circular cross-section in the plane of the holding surface. For example, the holding element can be a clamping table. The holding element can have a continuous holding surface.

[0048] When the wafer attached to the adhesive strip is positioned on the holding surface of the holding element, at least a portion of the wafer attached to the adhesive strip can be in contact with the holding surface, that is, directly in contact with the holding surface. The entire wafer attached to the adhesive strip can be in contact with the holding surface, that is, directly in contact with the holding surface.

[0049] The holding element can have a substantially ring-shaped cross-section or a ring-shaped cross-section in the plane of the holding surface. For example, the holding element can be a hollow expansion drum. The holding element can have a non-continuous holding surface.

[0050] When the wafer attached to the adhesive strip is positioned on the holding surface of the holding element, the wafer can be held in place by the adhesive strip. It is possible that no portion of the wafer attached to the adhesive strip will be in direct contact with the holding surface.

[0051] The first ring-shaped frame and the entire holding element, such as a holding table or a holding element with an essentially ring-shaped or annular cross-section, can be moved relative to each other in the direction perpendicular to the plane of the holding surface in order to radially widen the adhesive tape in the directions lying in the plane of the holding surface, thereby moving the chips away from each other.

[0052] The relative movement between the first annular frame and the retaining element can be achieved by moving only the first annular frame while keeping the retaining element stationary, by moving only the retaining element while keeping the first annular frame stationary, or by moving the first annular frame and the retaining element relative to each other in opposite directions. The retaining element can comprise a central portion and a substantially annular or ring-shaped circumferential portion surrounding the central portion.

[0053] The central part can be in the form of a holding table, which, for example, has a circular cross-section in the plane of the holding surface. For example, the central part can be in the form of a clamping table. The central part can have a continuous holding surface.

[0054] The circumferential part has a substantially ring-shaped cross-section or a ring-shaped cross-section in the plane of the holding surface. For example, the circumferential part may be in the form of a hollow expanding drum. The circumferential part has a non-continuous holding surface.

[0055] The circumferential portion of the retaining element can be moved relative to the central portion of the retaining element in a direction perpendicular to the plane of the holding surface. The first annular frame and the circumferential portion of the retaining element can be moved relative to each other in a direction perpendicular to the plane of the holding surface, thereby radially expanding the adhesive strip in directions lying in the plane of the holding surface, thus moving the chips away from each other. Alternatively, only the circumferential portion of the retaining element and the first annular frame can be moved relative to each other, while the central portion of the retaining element remains stationary.

[0056] The processing method of the invention can further comprise, after attaching the second annular frame to the expanded adhesive strip, circumferentially cutting the adhesive strip at a point that lies outside, i.e., radially outside, the section of the adhesive strip attached to the second annular frame. In this way, the section of the adhesive strip attached to the second annular frame can be separated from the remaining part of the strip in a simple and efficient manner, thereby making it possible to remove the second annular frame and the split wafer attached to it by the adhesive strip from the wafer processing system. Subsequently, the split wafer held by the second annular frame can, for example, be subjected to further processing, stored, or transported.

[0057] The holding element, which may be in the form of a holding table such as a clamping table, can have a chamfered or tapered circumferential section, such that the diameter of the holding element decreases with increasing distance from the holding surface in the direction perpendicular to the plane of the holding surface. Such a chamfered or tapered circumferential section allows particularly good access to the adhesive strip for a cutting tool used to cut the adhesive strip. Therefore, in this case, the cutting process can be carried out in a particularly efficient and precise manner.

[0058] The machining method of the invention can further comprise attaching, after cutting the adhesive tape, a section of the adhesive tape located between the point where the adhesive tape was cut and the section of the adhesive tape attached to the second annular frame to the second annular frame. In this way, it can be reliably prevented that a section of the adhesive tape is separated from the second annular frame, for example, by detaching. Thus, a particularly stable and reliable attachment of the adhesive tape to the second annular frame can be ensured.

[0059] The section of adhesive tape located between the point where the tape was cut and the section attached to the second annular frame can be attached to the second annular frame by using, for example, one or more rollers, such as a pair of rollers. For instance, the roller or rollers can be moved circumferentially along the section of adhesive tape to be attached to the second annular frame, pressing the section of adhesive tape against the second annular frame and thus joining these two components together.

[0060] The processing method of the invention can further comprise, for example, applying pressure to the section of the expanded adhesive tape attached to the second annular frame before cutting the adhesive tape, for example by using one or more rollers, such as a pair of rollers. For example, the roller or rollers can be moved circumferentially along the section of the adhesive tape attached to the second annular frame, so that the section of the adhesive tape is pressed against the second annular frame. In this way, a particularly stable and reliable attachment of the adhesive tape to the second annular frame can be ensured.

[0061] The inner diameter of the second annular frame can be 20 mm or more, preferably 30 mm or more, smaller than the outer diameter of the retaining element in the plane of the retaining surface and / or smaller than the inner diameter of the first annular frame. This ensures, simply and efficiently, that the section of the adhesive strip attached to the second annular frame is an annular strip section with a ring width of at least 10 mm, preferably at least 15 mm. Here, the term "ring width" is defined as half the difference between the outer diameter of an annular element and its inner diameter, that is, outer diameter minus inner diameter divided by two.

[0062] In this way, a particularly reliable and stable connection is achieved between the adhesive tape and the second ring-shaped frame.

[0063] The first ring-shaped frame and the second ring-shaped frame can have the same ring width. The first ring-shaped frame can have a ring width that is smaller than the ring width of the second ring-shaped frame. The first ring-shaped frame can have a ring width that is larger than the ring width of the second ring-shaped frame.

[0064] The first and / or the second annular frame can have a ring width in the range of 20 mm to 70 mm, preferably in the range of 30 mm to 60 mm and more preferably in the range of 40 mm to 50 mm.

[0065] The first and second frames are annular frames. Here, the term "annular" encompasses shapes that deviate from a perfect ring, for example, due to the presence of one or more flat or straight sections, notches, and / or grooves, which may be located, for example, on the outer and / or inner circumference of the ring. The first and / or second annular frame may have a minimum ring width, for example, at a position of the ring where a flat or straight section, notch, or groove is present, in the range of 20 mm to 70 mm, preferably in the range of 30 mm to 60 mm, and more preferably in the range of 40 mm to 50 mm.

[0066] The outer diameter of the first annular frame can be essentially the same as the outer diameter of the second annular frame. In this way, a particularly efficient and space-saving arrangement can be provided, since a first and a second frame holding device for the first and second annular frames, respectively, can be selected to be of essentially the same size.

[0067] The outer diameter of the first annular frame can be larger than the outer diameter of the second annular frame. The outer diameter of the first annular frame can be smaller than the outer diameter of the second annular frame.

[0068] The second annular frame can be a semiconductor-sized annular frame. Here, the term "semiconductor-sized annular frame" refers to an annular frame with the dimensions (standardized dimensions), in particular the inner diameter (standardized inner diameter), of an annular frame for holding a semiconductor wafer.

[0069] The dimensions, particularly the inner diameters, of ring-shaped frames for holding semiconductor wafers are also defined in the SEMI standards. For example, the dimensions of tape frames for 300 mm wafers are defined in the SEMI standard SEMI G74, and the dimensions of plastic tape frames for 300 mm wafers are defined in the SEMI standard SEMI G87. The ring-shaped frames can have frame sizes for holding semiconductor-sized wafers, such as 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, or 18 inches.

[0070] By providing a semiconductor-sized ring-shaped frame as the second ring-shaped frame, further processing of the wafer after it has been split, such as further processing after storage or transport, is facilitated. In particular, selecting a semiconductor-sized ring-shaped frame ensures the compatibility of the unit formed by the wafer, the adhesive tape, and the second ring-shaped frame with common semiconductor wafer processing equipment, for example, in a facility different from the one in which the wafer was split.

[0071] As explained above, dividing the wafer into multiple chips along the dividing lines can involve applying plasma to the wafer. The wafer can be divided into multiple chips by applying plasma to the wafer along the dividing lines.

[0072] The plasma can be applied to the wafer using a plasma application device, such as a plasma chamber, a plasma source, a plasma torch or a plasma nozzle.

[0073] In some embodiments, the plasma can be applied directly to the wafer by means of a plasma jet, for example using a plasma torch or a plasma nozzle, i.e. without the use of a mask.

[0074] In other embodiments, the method may further include forming a mask on the side of the wafer opposite the side of the same which is attached to or to be attached to the adhesive tape, after or before the wafer is attached to the adhesive tape and before the plasma is applied to the wafer.

[0075] The mask can be formed on one side of the wafer or on the side of the wafer opposite that side.

[0076] The mask can be designed such that the parting lines on one side of the wafer remain uncovered when the mask is applied to that side of the wafer, or it can be designed such that the areas of the side of the wafer opposite the parting lines remain uncovered when the mask is applied to that side of the wafer. Alternatively, the mask can be designed to cover substantially the entire respective wafer surface, leaving only the parting lines on one side of the wafer uncovered, or only the areas of the side of the wafer opposite the parting lines.

[0077] Forming the mask on the side of the wafer opposite the side attached to, or to be attached to, the adhesive tape can involve depositing a cover layer, such as a resist layer, onto that side of the wafer and forming a pattern in the cover layer, for example, by optical lithography or electron beam lithography. For example, a pattern in the cover layer can be formed by photolithography or lithography using a laser beam.

[0078] The plasma can be applied to the wafer on which the mask has been formed. For example, the wafer with the formed mask can be placed in a plasma chamber and subjected to plasma etching. In this case, the plasma reacts with the wafer material only in those areas of the wafer not covered by the mask, such as the parting lines on one side of the wafer or the areas on the side of the wafer opposite the parting lines. The plasma removes the wafer material in these areas through plasma etching, thereby dividing the wafer into individual chips or building blocks along the parting lines.

[0079] The mask can then be removed from the separated chips or building blocks.

[0080] The invention further provides a wafer processing system for processing a wafer that has a component area on one side with multiple components separated by several parting lines. The system comprises a holding element with a holding surface for arranging the wafer thereon, a first frame holding means for holding a first annular frame, a dividing means for dividing the wafer along the parting lines into multiple chips or components, and a second frame holding means for holding a second annular frame of semiconductor size. The holding element and the first frame holding means are configured such that the first frame holding means and at least a circumferential portion of the holding element are movable relative to each other in a direction perpendicular to the plane of the holding surface.The holding element and the second frame holding device are configured such that the second frame holding device and at least the circumferential portion of the holding element are movable relative to each other in a direction perpendicular to the plane of the holding surface. The outer diameter of the holding element in the plane of the holding surface is larger than the inner diameter of the second annular frame, which is semiconductor-sized. The wafer processing system is configured such that the outer diameter of the holding element in the plane of the holding surface remains unchanged during wafer processing.

[0081] The wafer processing system of the invention is a system designed to carry out the wafer processing method of the invention. The wafer processing system thus provides the technical effects and advantages that have already been described in detail above for the wafer processing method.

[0082] The features described above for the wafer processing method of the invention also apply to the wafer processing system of the invention. In particular, the holding element of the wafer processing system has been described in detail above.

[0083] By moving the first frame holding means and at least a circumferential part of the holding element relative to each other in the direction perpendicular to the plane of the holding surface, an adhesive strip held by the first annular frame is radially expanded by the holding element in the directions lying in the plane of the holding surface, thereby moving the chips attached to the adhesive strip away from each other.

[0084] By moving the second frame holding means and at least the circumferential part of the holding element relative to each other in the direction perpendicular to the plane of the holding surface, the second annular frame of semiconductor size is attached to a section of the expanded adhesive strip that is arranged on the circumferential part of the holding element.

[0085] The dividing means can be configured to divide the wafer arranged on the holding surface of the holding element.

[0086] The dividing means can be a mechanical cutting or dividing means, a laser beam application means, or a plasma application means. The dividing means can comprise one or more mechanical cutting or dividing means and / or one or more laser beam application means and / or one or more plasma application means. For example, the dividing means can comprise a mechanical cutting or dividing means and a laser beam application means or a plasma application means. The dividing means can comprise a laser beam application means and a plasma application means.

[0087] The mechanical cutting or dividing means can be configured to mechanically cut or divide the wafer arranged on the holding surface of the holding element.

[0088] The laser beam application device can be configured to apply a laser beam to the wafer located on the holding surface of the holding element.

[0089] The plasma application agent can be configured to apply a plasma to the wafer located on the holding surface of the holding element.

[0090] The mechanical cutting or dividing device can be, for example, a blade or a saw. The plasma application device can be, for example, a plasma chamber, a plasma source, a plasma torch, or a plasma nozzle.

[0091] The wafer processing system can further comprise a first motion means for moving the first frame holding means and at least one circumferential part of the holding element relative to each other in the direction perpendicular to the plane of the holding surface.

[0092] The wafer processing system may further comprise a second means of movement for moving the second frame holding means and at least the circumferential part of the holding element relative to each other in the direction perpendicular to the plane of the holding surface.

[0093] The wafer processing system may further include a band cutting device for cutting the adhesive tape held by the first annular frame. The band cutting device may be configured to cut the adhesive tape circumferentially at a point that lies outside, i.e., radially outside, the section of the adhesive tape attached to the second annular frame.

[0094] The wafer processing system may further include a pressing device for applying pressure to a section of the adhesive tape. For example, the pressing device may comprise one or more rollers, such as a pair of rollers.

[0095] The pressing device can be configured to apply, after cutting the adhesive tape, a section of the adhesive tape located between the point where the adhesive tape was cut and the section of the adhesive tape attached to the second annular frame to the second annular frame. For example, the roller or rollers of the pressing device can be moved circumferentially along the section of the adhesive tape to be applied to the second annular frame, so that the section of the adhesive tape is pressed against the second annular frame, thereby joining these two components together.

[0096] The pressing device can be configured, for example, to exert pressure on the section of the expanded adhesive tape attached to the second annular frame before the tape is cut. For example, the roller or rollers of the pressing device can be moved circumferentially along the section of the adhesive tape attached to the second annular frame, so that the section of the adhesive tape is pressed against the second annular frame.

[0097] The wafer processing system may also include a cleaning agent for cleaning the wafer, for example after the wafer has been split.

[0098] The wafer processing system can comprise a single wafer processing device or multiple wafer processing devices, such as two or three. The multiple wafer processing devices can be interconnected.

[0099] For example, the wafer processing system can comprise two wafer processing devices, that is, a first wafer processing device and a second wafer processing device. The first wafer processing device and the second wafer processing device can be connected to each other, for example, in series. The first wafer processing device can include the parting device, such as a plasma deposition device. The second wafer processing device can include the holding element and the first and second frame holding devices. Furthermore, the second wafer processing device can include the first and second moving devices. The second wafer processing device can also include the cleaning agent.

[0100] The wafer processing system can comprise three or more interconnected wafer processing devices. One of the wafer processing devices can include the holding element and the first and second frame holders. The other wafer processing devices can each include a dividing device, such as a plasma deposition device. In this case, a single holding element and a single first and second frame holder can be used for, that is, in combination with, several dividing devices, such as two or three, thereby significantly reducing equipment costs.

[0101] Alternatively, the wafer processing system can comprise a single wafer processing device, which includes the parting means, such as a plasma deposition agent, the holding element, and the first and second frame holding means. Furthermore, the single wafer processing device can include the first and second moving means. The single wafer processing device can also include the cleaning agent.

[0102] The wafer processing system may include a control device for controlling the system's components.

[0103] The control device can be configured to control the movement of the first frame holding means and at least one circumferential part of the holding element relative to each other in the direction perpendicular to the plane of the holding surface, for example by controlling the first means of movement.

[0104] The control device can be configured to control the movement of the second frame holding means and at least the circumferential part of the holding element relative to each other in the direction perpendicular to the plane of the holding surface, for example by controlling the second means of movement.

[0105] The control device can be configured to control the dividing means in such a way that the wafer is divided along the dividing lines into the multiple chips or building blocks.

[0106] For example, the control unit can be configured to control a mechanical cutting or dividing process of the wafer by controlling a mechanical cutting or dividing device. The control unit can be configured to control the application of a laser beam to the wafer by controlling a laser beam application device. The control unit can be configured to control the application of plasma to the wafer by controlling a plasma application device.

[0107] The control device can be configured to control the wafer processing system in such a way that the wafer processing method of the invention is carried out.

[0108] The control unit can be configured to control the belt cutting agent and / or the pushing agent and / or the cleaning agent.

[0109] The wafer processing system can further comprise the first annular frame, wherein the outer diameter of the holding element in the plane of the holding surface is smaller than an inner diameter of the first annular frame.

[0110] The inner diameter of the second annular frame with semiconductor size is smaller than the inner diameter of the first annular frame.

[0111] The wafer processing system can further include the second ring-shaped frame with semiconductor size. Brief description of the drawings

[0112] Non-limiting examples of the invention are explained below with reference to the drawings, wherein: Fig. 1 is a cross-sectional representation showing a wafer attached to an adhesive strip held by a first annular frame; Fig. 2 is a cross-sectional representation illustrating a step for applying a plasma to the wafer attached to the adhesive tape according to a first embodiment of the method of the present invention; Fig. 3 is a cross-sectional view showing the wafer attached to the adhesive tape after the step of applying the plasma to it; Fig. 4 is a cross-sectional representation illustrating a step towards radially widening the adhesive tape according to the first embodiment of the method of the present invention; Fig. 5 is a cross-sectional representation illustrating a step for attaching a second annular frame to a section of the expanded adhesive strip according to the first embodiment of the method of the present invention; Fig. 6 is a cross-sectional representation illustrating a step towards circumferential cutting of the adhesive tape according to the first embodiment of the method of the present invention; Fig. 7 is a cross-sectional view showing the wafer attached to the adhesive tape held by the second annular frame after the step of circumferential cutting of the adhesive tape according to the first embodiment of the method of the present invention; Fig. 8 is a cross-sectional representation illustrating a step towards radially widening the adhesive tape according to a second embodiment of the method of the present invention; Fig. 9 is a cross-sectional representation illustrating a step for attaching a second annular frame to a section of the expanded adhesive tape and a first step for pressing the section of the adhesive tape against the second annular frame according to the second embodiment of the method of the present invention; Fig. 10 is a cross-sectional representation illustrating a second step for pressing the section of the adhesive tape against the second annular frame according to the second embodiment of the method of the present invention; Fig. 11 is a cross-sectional view illustrating a step towards circumferential cutting of the adhesive tape according to the second embodiment of the method of the present invention; and Fig. 12 is a cross-sectional view showing the wafer attached to the adhesive tape held by the second annular frame after the step of circumferential cutting of the adhesive tape according to the second embodiment of the method of the present invention. Detailed description of preferred embodiments

[0113] Preferred embodiments of the invention are described below with reference to the accompanying drawings. These preferred embodiments relate to methods for processing a wafer and wafer processing systems for carrying out these methods.

[0114] A first embodiment of the method for processing a wafer according to the present invention and of the wafer processing system according to the present invention is described below with reference to Fig. 1 to 7 described.

[0115] As in Fig. As shown in Figure 1, the wafer 2 to be processed by the method of the invention has a front side 4 and a back side 6, which is opposite the front side 4. A component area (not shown) with several components, which are separated by several dividing lines (not shown), is formed on the front side 4 of the wafer 2.

[0116] Wafer 2 can be, for example, a semiconductor wafer, a glass wafer, a sapphire wafer, a ceramic wafer, such as an aluminum oxide (Al2O3) ceramic wafer, a silicon oxide (SiO2) wafer, an aluminum nitride (AlN) wafer, or the like.

[0117] In particular, wafer 2 can be, for example, a silicon (Si) wafer, a gallium arsenide (GaAs) wafer, a gallium nitride (GaN) wafer, a gallium phosphide (GaP) wafer, an indium arsenide (InAs) wafer, an indium phosphide (InP) wafer, a silicon carbide (SiC) wafer, a silicon nitride (SiN) wafer, a lithium tantalate (LT) wafer, a lithium niobate (LN) wafer, or the like.

[0118] The components formed in the component area on the front side 4 of the wafer 2 can be, for example, semiconductor components, power components, optical components, medical components, electrical components, MEMS components or combinations thereof.

[0119] In the method of the first embodiment, the back side 6 of the wafer 2 is first attached to an adhesive strip 8 held by a first annular frame 10, such that the wafer 2 is arranged within a central opening 12 of the first annular frame 10. The result of this attachment step is in Fig. 1 illustrates.

[0120] Subsequently, the wafer 2 attached to the adhesive strip 8 is arranged on a holding surface 14 of a holding element 16, such that the side of the adhesive strip 8 opposite the side of the same attached to the wafer 2 is in contact with the holding surface 14 (see Fig. 2) As in Fig. As illustrated in Figure 2, the entire wafer 2 attached to the adhesive strip 8 lies directly against the holding surface 14 of the holding element 16.

[0121] The in Fig. The holding element 16 shown in Figure 2 is in the form of a holding table with a circular cross-section in the plane of the holding surface 14. For example, the holding element 16 can be a clamping table. The holding element 16 has a continuous holding surface 14.

[0122] Furthermore, the retaining element 16 has a chamfered or tapered circumferential section 18, such that the diameter of the retaining element 16 decreases with increasing distance from the retaining surface 14 in the direction perpendicular to the plane of the retaining surface 14. This chamfered or tapered circumferential section 18 provides particularly good access to the adhesive strip 8 for a cutting tool used when cutting the adhesive strip, as described below with reference to Fig. Section 6 will be explained in more detail.

[0123] As in Fig. As shown in Figure 2, the outer diameter of the retaining element 16 in the plane of the retaining surface 14 is smaller than the inner diameter of the first annular frame 10.

[0124] After the wafer 2, attached to the adhesive strip 8, has been positioned on the holding surface 14 of the holding element 16, a plasma PL is applied to the wafer 2 in order to divide the wafer 2 along the parting lines, as shown in Fig. Figure 2 illustrates this. The plasma PL is applied to wafer 2 by a plasma application agent (not shown).

[0125] Although in the method according to the first embodiment the wafer 2 is divided by applying a plasma PL to it along the parting lines, the wafer 2 can alternatively be divided in other ways, for example by mechanical cutting or splitting and / or by laser cutting or splitting. Furthermore, a combination of mechanical cutting or splitting, laser cutting or splitting, and plasma cutting or splitting can be used for this purpose, as described in detail above.

[0126] The holding element 16 and the plasma application agent form part of a wafer processing system (not shown) according to a first embodiment of the present invention.

[0127] The plasma application medium can be, for example, a plasma chamber, a plasma source, a plasma torch, or a plasma nozzle.

[0128] The plasma can be applied directly to the wafer 2 by means of a plasma jet, for example using a plasma torch or a plasma nozzle, i.e. without the use of a mask.

[0129] Alternatively, a mask can be formed on the wafer front 4 and the wafer 2 can subsequently be subjected to plasma etching, for example in a plasma chamber, as described above.

[0130] The plasma removes the wafer material along the separation lines by plasma etching, thereby dividing the wafer 2 into individual chips 20 (see Fig. 3).

[0131] The mask can be removed from the separated chips 20 in a subsequent step.

[0132] As in Fig. As shown schematically in Figure 3, narrow cutting edges or grooves are formed between the separated chips 20 during the plasma deposition step. To reliably prevent damage to the chips 20 due to unintentional contact between them, for example during further processing, handling, or transport of the split wafer 2, the distances between the chips 20 are increased, as explained below.

[0133] After the plasma PL has been applied to the wafer 2, so that the wafer 2 has been divided into the chips 20, the first ring-shaped frame 10 and the entire holding element 16 are moved relative to each other in a direction perpendicular to the plane of the holding surface 14, as shown in Fig. Figure 4 is illustrated by an arrow A. The relative movement between the first annular frame 10 and the retaining element 16 can be effected by moving only the first annular frame 10 and keeping the retaining element 16 stationary, by moving only the retaining element 16 and keeping the first annular frame 10 stationary, or by moving the first annular frame 10 and the retaining element 16 in opposite directions relative to each other.

[0134] Since the outer diameter of the retaining element 16 in the plane of the retaining surface 14 is smaller than the inner diameter of the first annular frame 10, the retaining element 16 can extend through the central opening 12 of the first annular frame 10 in the direction of arrow A. Fig. 4 move. Due to this relative movement between the first annular frame 10 and the retaining element 16, the adhesive strip 8 is radially expanded in the directions lying in the plane of the retaining surface 14, thereby moving the chips 20 away from each other (see Fig. 4).

[0135] The first annular frame 10 and the retaining element 16 are moved relative to each other by means of a first frame retaining device (not shown) and a first movement device (not shown). The first frame retaining device holds the first annular frame 10. The first movement device moves the first frame retaining device, which holds the first annular frame 10, and the retaining element 16 relative to each other in a direction perpendicular to the plane of the retaining surface 14.

[0136] The first frame holding means and the first movement means form part of the wafer processing system according to the first embodiment of the present invention. The wafer processing system further comprises a control device (not shown) configured to control the movement of the first frame holding means and the holding element 16 relative to each other in the direction perpendicular to the plane of the holding surface 14 by controlling the first movement means.

[0137] Subsequently, a second annular frame 22 is attached to a section of the widened adhesive strip 8, which is arranged on the circumferential part of the retaining element 16, as shown in Fig. Figure 5 illustrates this. The second annular frame 22 is attached to the side of the adhesive strip 8 that is attached to the wafer 2. The wafer 2, which has been divided into several chips 20, is arranged within a central opening 24 of the second annular frame 22 (see Figure 5). Fig. 5).

[0138] By attaching the second annular frame 22 to the circumferential section of the expanded adhesive strip 8, the radial tension of the strip 8 is maintained, thereby preventing damage to the chips 20 due to unintentional contact between them, particularly after cutting the expanded strip 8 (see Fig. 6), is reliably prevented.

[0139] As in Fig. As shown in Figure 5, the inner diameter of the second annular frame 22 is smaller than the outer diameter of the retaining element 16 in the plane of the retaining surface 14 and smaller than the inner diameter of the first annular frame 10. Therefore, the second annular frame 22 can be easily attached to the circumferential section of the expanded adhesive strip 8 by pressing the second annular frame 22 against the circumferential section of the retaining surface 14, with the expanded strip 8 positioned between them. In this way, a stable and reliable connection between the second annular frame 22 and the expanded strip 8 can be efficiently achieved.

[0140] The second annular frame 22 is attached to the section of the expanded adhesive strip 8 located on the circumferential portion of the retaining element 16 by means of a second frame retaining element (not shown) and a second movement element (not shown). The second frame retaining element holds the second annular frame 22. The second movement element moves the second frame retaining element, which holds the second annular frame 22, and the retaining element 16 relative to each other in a direction perpendicular to the plane of the retaining surface 14. By moving the second frame retaining element and the retaining element 16 relative to each other in this manner, the second annular frame 22 is attached to the section of the expanded adhesive strip 8 located on the circumferential portion of the retaining element 16.

[0141] The second frame holding means and the second movement means form part of the wafer processing system according to the first embodiment of the present invention. The control device of the wafer processing system is configured to control the movement of the second frame holding means and the holding element 16 relative to each other in the direction perpendicular to the plane of the holding surface 14 by controlling the second movement means.

[0142] The second ring-shaped frame 22 can be a ring-shaped frame the size of a semiconductor. This facilitates further processing of the wafer 2 after it has been split, such as further processing after storage or transport, as described above.

[0143] After the second annular frame 22 has been attached to the expanded adhesive strip 8, the adhesive strip 8 is circumferentially cut at a point located outside the section of the adhesive strip 8 that is attached to the second annular frame 22, as shown in Fig. Figure 6 illustrates that the adhesive tape 8 is cut circumferentially by using a tape cutting device 26, such as a knife or blade, which is moved circumferentially around the holding element 16. As further illustrated in Fig. As shown in Figure 6, the cutting process is facilitated by the beveled or conically tapered circumferential section 18 of the retaining element 16, which allows the tape cutting means 26 particularly good access to the adhesive tape 8.

[0144] The belt cutting device 26 forms part of the wafer processing system according to the first embodiment of the present invention. The control unit of the wafer processing system is configured to control the cutting process carried out by the belt cutting device 26.

[0145] Subsequently, the second ring-shaped frame 22 and the split wafer 2 attached to it by the adhesive strip 8 are removed from the wafer processing system, as shown in Fig. Figure 7 illustrates this. In this state, the split wafer 2, held by the second annular frame 22, can be further processed, stored, or transported. Due to the use of the second annular frame 22, which is attached directly to the circumferential section of the expanded adhesive strip 8, the tension exerted on the expanded strip 8 can be reliably maintained for a longer period of time, for example, during storage or transport of the wafer 2.

[0146] A second embodiment of the method for processing a wafer according to the present invention and of the wafer processing system according to the present invention is described below with reference to Fig. 8 to 12 described.

[0147] The second embodiment of the invention differs substantially from the first embodiment with respect to the construction of the retaining element 16, as explained below. In the description of the second embodiment, the elements that are essentially identical to those of the first embodiment are designated with the same reference numerals, and a repeated description of them is omitted.

[0148] As in Fig. As shown in Figure 8, the retaining element 16 according to the second embodiment comprises a central part 16a and an annular circumferential part 16b that surrounds the central part 16a. The circumferential part 16b of the retaining element 16 is movable in the direction perpendicular to the plane of the retaining surface 14 relative to the central part 16a of the retaining element 16.

[0149] The central part 16a is in the form of a holding table, which, for example, has a circular cross-section in the plane of the holding surface 14. For example, the central part 16a can be in the form of a clamping table. The central part 16a has a continuous holding surface.

[0150] The circumferential part 16b has a ring-shaped cross-section in the plane of the holding surface 14. For example, the circumferential part 16b can be in the form of a hollow expanding drum. The circumferential part 16b has a non-continuous holding surface.

[0151] The steps for attaching the wafer 2 to the adhesive strip 8 held by the first annular frame 10 and for applying the plasma PL to the wafer 2 in order to divide the wafer 2 into the chips 20 along the dividing lines are essentially the same as for the first embodiment described above.

[0152] Although in the method according to the second embodiment the wafer 2 is divided by applying a plasma PL to it along the parting lines, the wafer 2 can alternatively be divided in other ways, for example by mechanical cutting or splitting and / or by laser cutting or splitting. Furthermore, a combination of mechanical cutting or splitting, laser cutting or splitting, and plasma cutting or splitting can be used for this purpose, as detailed above.

[0153] After the plasma PL has been applied to the wafer 2, so that the wafer 2 has been divided into the chips 20, the first annular frame 10 and the circumferential part 16b of the holding element 16 are moved relative to each other in the direction perpendicular to the plane of the holding surface 14 in order to radially expand the adhesive strip 8 in the directions lying in the plane of the holding surface 14, thereby moving the chips 20 away from each other, as indicated by an arrow A in Fig. Figure 8 illustrates this. It is possible that only the circumferential part 16b of the retaining element 16 and the first ring-shaped frame 10 are moved relative to each other. The middle part 16a of the retaining element 16 can be held stationary during the band expansion process.

[0154] Subsequently, the second annular frame 22 is attached to a section of the widened adhesive strip 8, which is arranged on the circumferential part 16b of the retaining element, as shown in Fig. Figure 9 illustrates this. The second annular frame 22 is attached to the side of the adhesive strip 8 that is attached to the wafer 2. The wafer 2, which has been divided into several chips 20, is positioned within the central opening 24 of the second annular frame 22 (see Figure 9). Fig. 9).

[0155] As in Fig. As shown in Figure 9, the inner diameter of the second annular frame 22 is smaller than the outer diameter of the retaining element 16 in the plane of the retaining surface 14, that is, the outer diameter of the circumferential portion 16b of the retaining element 16, and smaller than the inner diameter of the first annular frame 10. Therefore, the second annular frame 22 can be easily attached to the circumferential portion of the expanded adhesive strip 8 by pressing the second annular frame 22 against the retaining surface 14 of the circumferential portion 16b of the retaining element, with the expanded strip 8 positioned between them. In this way, a stable and reliable connection between the second annular frame 22 and the expanded strip 8 can be efficiently achieved.

[0156] The following, as also in Fig. As illustrated in Figure 9, pressure is exerted on a radially inner part of the section of the expanded adhesive strip 8 attached to the second annular frame 22 by using a pressing device 28 comprising a pair of rollers. The rollers of the pressing device 28 are moved circumferentially along the inner part of the section of the adhesive strip 8 attached to the second annular frame 22, so that this inner part is pressed against the second annular frame 22. In this way, the attachment of the adhesive strip 8 to the second annular frame 22 is further improved.

[0157] The pressing element 28 forms part of the wafer processing system according to the second embodiment of the present invention. The control unit of the wafer processing system is configured to control the pressing process carried out by the pressing element 28.

[0158] After the pressing operation has been carried out on the inner part of the section of the expanded adhesive strip 8 which is attached to the second annular frame 22, the circumferential part 16b of the retaining element 16 is retracted and a similar pressing operation is carried out on a radially outer part of the section of the expanded adhesive strip 8 which is attached to the second annular frame 22 (see Fig. 10). In this way, a particularly uniform bond is achieved between the adhesive strip 8 and the second annular frame 22. For this additional pressing process, the same pressing agent 28 is used as in the one described in Fig. The 9 illustrated pressing process is used, as shown in Fig. 10 is shown.

[0159] The following describes how in Fig. As illustrated in Figure 11, the adhesive strip 8 is circumferentially cut at a point located outside the section of the adhesive strip 8 that is attached to the second annular frame 22. This cutting process is carried out in essentially the same manner as in the first embodiment (see Figure 11). Fig. 6) performed using the same tape cutting tool 26.

[0160] After the adhesive strip 8 has been cut in this manner, the second ring-shaped frame 22 and the split wafer 2 attached to it by the adhesive strip 8 are removed from the wafer processing system as shown in Fig.Figure 12 illustrates this. In this state, the split wafer 2, held by the second annular frame 22, can be further processed, stored, or transported. Due to the use of the second annular frame 22, which is attached directly to the circumferential section of the expanded adhesive strip 8, the tension exerted on the expanded strip 8 can be reliably maintained for a longer period of time, for example, during storage or transport of the wafer 2.

Claims

[1] A method for processing a wafer (2) having on one side (4) a component region with a plurality of components separated by a plurality of separating lines, the method comprising: Attaching one side (4) of the wafer (2) or the side (6) of the wafer (2) opposite the one side (4) to an adhesive tape (8) held by a first annular frame (10) so that the wafer (2) is arranged within a central opening (12) of the first annular frame (10); Dividing the wafer (2) along the dividing lines into several chips (20); Arranging the wafer (2) attached to the adhesive tape (8) on a holding surface (14) of a holding element (16) before or after dividing the wafer (2) so that the side of the adhesive tape (8) opposite the side thereof attached to the wafer (2) is in contact with the holding surface (14), wherein an outer diameter of the holding element (16) in the plane of the holding surface (14) is smaller than an inner diameter of the first annular frame (10); after dividing the wafer (2), moving the first annular frame (10) and at least a peripheral part of the holding element (16) relative to each other in the direction perpendicular to the plane of the holding surface (14) so ​​as to radially expand the adhesive tape (8) in the directions lying in the plane of the holding surface (14), whereby the chips (20) are moved away from each other; and Attaching a second annular frame (22) to a portion of the expanded adhesive tape (8) arranged on the peripheral part of the holding element (16), wherein the second annular frame (22) is attached to the side of the adhesive tape (8) that is attached to the wafer (2), and the wafer (2) that has been divided into the plurality of chips (20) is arranged within a central opening (24) of the second annular frame (22); wherein an inner diameter of the second annular frame (22) is smaller than the outer diameter of the holding element (16) in the plane of the holding surface (14) and smaller than the inner diameter of the first annular frame (10), and the outer diameter of the holding element (16) in the plane of the holding surface (14) remains unchanged during the process. [2] Method according to claim 1, in which the wafer (2) attached to the adhesive tape (8) is arranged on the holding surface (14) of the holding element (16) before the wafer (2) is divided, and the wafer (2) arranged on the holding surface (14) is divided into the plurality of chips (20) along the dividing lines. [3] The method according to claim 1, wherein the wafer (2) attached to the adhesive tape (8) is arranged on the holding surface (14) of the holding element (16) after the wafer (2) has been divided. [4] Method according to one of the preceding claims, wherein the first annular frame (10) and the entire holding element (16) are moved relative to each other in the direction perpendicular to the plane of the holding surface (14) so ​​as to radially expand the adhesive tape (8) in the directions lying in the plane of the holding surface (14), whereby the chips (20) are moved away from each other. [5] Method according to one of claims 1 to 3, in which the holding element (16) has a central part (16a) and an annular peripheral part (16b) surrounding the central part (16a), the peripheral part (16b) of the holding element (16) is movable relative to the central part (16a) of the holding element (16) in the direction perpendicular to the plane of the holding surface (14), and the first annular frame (10) and the peripheral part (16b) of the holding element (16) are moved relative to each other in the direction perpendicular to the plane of the holding surface (14) so ​​as to radially expand the adhesive tape (8) in the directions lying in the plane of the holding surface (14), whereby the chips (20) are moved away from each other. [6] A method according to any one of the preceding claims, further comprising, after attaching the second annular frame (22) to the expanded adhesive tape (8), circumferentially cutting the adhesive tape (8) at a location located outside the portion of the adhesive tape (8) attached to the second annular frame (22). [7] The method of claim 6, further comprising, after cutting the adhesive tape (8), attaching to the second annular frame (22) a portion of the adhesive tape (8) located between the location where the adhesive tape (8) was cut and the portion of the adhesive tape (8) attached to the second annular frame (22). [8] Method according to one of the preceding claims, wherein the inner diameter of the second annular frame (22) is 20 mm or more smaller than the outer diameter of the holding element (16) in the plane of the holding surface (14) and / or smaller than the inner diameter of the first annular frame (10). [9] Method according to one of the preceding claims, wherein an outer diameter of the first annular frame (10) is equal to an outer diameter of the second annular frame (22). [10] A method according to any one of the preceding claims, wherein the second annular frame (22) is a semiconductor-sized annular frame. [11] Method according to one of the preceding claims, wherein dividing the wafer (2) along the dividing lines into the plurality of chips (20) comprises applying a plasma (PL) to the wafer (2). [12] Method according to claim 11, wherein the method further comprises forming a mask on the side of the wafer (2) opposite the side thereof which is attached to the adhesive tape (8) or is to be attached to the adhesive tape (8), after or before attaching the wafer (2) to the adhesive tape (8) and before applying the plasma (PL) to the wafer (2); the mask is formed such that the dividing lines on one side (4) of the wafer (2) or the areas of the side (6) of the wafer (2) opposite the one side (4) opposite the dividing lines are left uncovered; and the plasma (PL) is applied to the wafer (2) on which the mask was formed. [13] Wafer processing system for processing a wafer (2) having on one side (4) a component area with a plurality of components separated by a plurality of separation lines, the system comprising: a holding member (16) having a holding surface (14) for arranging the wafer (2) thereon; a first frame holding means for holding a first annular frame (10); a dividing means for dividing the wafer (2) along the dividing lines into a plurality of chips (20); and a second frame holding means for holding a second annular frame (22) of semiconductor size; wherein the holding element (16) and the first frame holding means are arranged such that the first frame holding means and at least a peripheral part of the holding element (16) are movable relative to each other in the direction perpendicular to the plane of the holding surface (14), the holding element (16) and the second frame holding means are arranged such that the second frame holding means and at least the peripheral part of the holding element (16) are movable relative to each other in the direction perpendicular to the plane of the holding surface (14), an outer diameter of the holding element (16) in the plane of the holding surface (14) is larger than an inner diameter of the second annular frame (22) with semiconductor size, and the wafer processing system is configured such that the outer diameter of the holding element (16) in the plane of the holding surface (14) remains unchanged during processing of the wafer (2). [14] The wafer processing system of claim 13, further comprising the first annular frame (10), wherein the outer diameter of the holding member (16) in the plane of the holding surface (14) is smaller than an inner diameter of the first annular frame (10).

Images