Diode laser arrangement and method for manufacturing a diode laser arrangement

Abstract

Diode laser arrangement (1), with - at least one emitter (4), - a first cooling device (13), - a second cooling device (15), and - a first connection position (17,17'), whereby - the at least one emitter (4) is set up to emit a laser beam, wherein - the at least one emitter (4) is arranged between the first cooling device (13) and the second cooling device (15), wherein - the first cooling device (13) and the second cooling device (15) are each configured to cool the at least one emitter (4), wherein - the at least one emitter (4) is connected to the first cooling device (13) via the first connection layer (17,17'), and wherein - the first bonding layer (17,17') has a bonding material or consists of a bonding material selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge.

Description

[0001] The invention relates to a diode laser arrangement and a method for producing a diode laser arrangement.

[0002] During operation of emitters, particularly in the high-power range, such as high-power diode laser bars, heat loss is generated, which must be dissipated from the emitter(s) to achieve high output power combined with a long service life, high beam quality, and intended and constant beam parameters, such as a high and uniform degree of polarization. Typically, a diode laser arrangement with such emitters has a cooling device that is thermally coupled to the emitter(s) and designed to dissipate the heat loss. An arrangement of at least one emitter between two such cooling devices is known in order to increase the cooling performance or to realize a thermomechanically symmetrical structure.To connect such a cooling device to the at least one emitter, materials such as brazing alloys are typically used. Due to their higher modulus of elasticity relative to the joining partners, these materials promote or cause mechanical stresses, particularly in a laser-active material of the at least one emitter. Such stresses depend in particular on the difference in the thermal expansion coefficient between the joining material, such as the brazing alloy, and the joining partners, as well as on expansion differences of intermetallic phases in the solder structure. Such stresses have a highly negative impact on the lifetime, beam quality, and polarization, and severely limit the applicability of the diode laser array.

[0003] From DE 10 2014 000 510 A1 a diode laser is known in which a laser bar is mounted between two heat sinks.

[0004] DE 60 2004 003 196 T2 discloses a laser diode which is connected to submounts on both sides by means of a solder layer.

[0005] US 2018 / 0 062 348 A1 shows a laser comprising a thermal bonding layer with carbon nanotubes.

[0006] From DE 10 2006 037 198 A1 a method for joining two wafers or electronic components by pressure sintering is known.

[0007] The invention is based on the object of creating a diode laser arrangement and a method for producing a diode laser arrangement, wherein advantages over known diode laser arrangements are realized, in particular with regard to high output power and, at the same time, long service life, beam quality and intended beam parameters.

[0008] The problem is solved by creating the subject matter of the independent claims. Advantageous embodiments emerge from the subclaims.

[0009] The object is achieved in particular by creating a diode laser arrangement with at least one emitter, a first cooling device, a second cooling device and a first connecting layer. The at least one emitter is configured to emit a laser beam. The laser beam can also consist of several partial laser beams. This is the case, for example, if the at least one emitter is designed as a diode laser bar. The at least one emitter is arranged between the first cooling device and the second cooling device. The first cooling device and second cooling device are each configured to cool the at least one emitter. The at least one emitter is connected to the first cooling device via the first connecting layer.The first bonding layer comprises or consists of a bonding material selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge.

[0010] The diode laser arrangement according to the invention has advantages over the prior art. Because the first connecting layer, via which the at least one emitter is connected to the first cooling device, comprises or consists of a connecting material selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge, stresses during operation of the diode laser arrangement, in particular at high operating temperatures of the at least one emitter, can be significantly reduced or even avoided. For example, temperature-induced deformation of at least one emitter embodied as a diode laser bar can be significantly reduced or even avoided. The service life of the diode laser arrangement, in particular of the at least one emitter, can be significantly increased.Furthermore, high or higher output power can be achieved with simultaneous long lifetime and beam quality. Furthermore, spectral properties or geometric characteristics of the emitted laser beam, such as the degree of polarization, wavelength, or beam angle, can be kept constant within narrower ranges. Furthermore, the degree of polarization can be increased. Furthermore, the diode laser array can be operated as intended even at higher temperatures.

[0011] The at least one emitter can be designed as a single emitter. Such an emitter is preferably designed as an edge emitter. Such an emitter is preferably designed as a high-power emitter. Particularly preferably, the at least one emitter is designed as a diode laser bar with multiple emitters, which are preferably arranged in a one-dimensional row (array). Such a diode laser bar is preferably designed as an edge emitter. Particularly preferably, such a diode laser bar is designed as a high-power diode laser bar.

[0012] In particular, the first cooling device and / or the second cooling device are each designed as a heat sink. Preferably, the first cooling device and / or the second cooling device are each configured to be actively cooled. Particularly preferably, the first cooling device and / or the second cooling device are configured to allow a cooling fluid to flow through them, thus enabling heat to be dissipated.

[0013] Preferably, the cooling fluid is not supplied to and removed from the first cooling device and / or the second cooling device via a connecting surface of the first cooling device and / or the second cooling device. A connecting surface of the type mentioned refers in particular to a surface of the first cooling device and / or the second cooling device on or at which the first connecting layer or the second connecting layer is arranged, or to a surface facing the at least one emitter. Preferably, a connection for supplying and / or removing the cooling fluid is arranged laterally on the first cooling device and / or the second cooling device. As a result, the cooling fluid can flow through the first cooling device and / or the second cooling device independently of one another.Advantageously, temperature differences on an n-side and a p-side of the at least one emitter can thus be reduced or even avoided.

[0014] In particular, the first cooling device and the second cooling device are each arranged on two opposite sides of the at least one emitter. For example, the first cooling device can be arranged adjacent to a first side of the at least one emitter, and the second cooling device can be arranged adjacent to a second side of the at least one emitter opposite the first side. For example, a p-side of the at least one emitter can be arranged in the region of the first side, and an n-side of the at least one emitter can be arranged in the region of the second side.

[0015] In a preferred embodiment of the diode laser arrangement, the first connecting layer is configured to firmly connect the at least one emitter to the first cooling device. It is possible for a submount to be arranged between the at least one emitter and the first cooling device, wherein the at least one emitter is firmly connected to the submount via the first connecting layer, or the submount is firmly connected to the first cooling device via the first connecting layer. Such a first submount is described further below as a preferred embodiment of the diode laser arrangement. It is also possible for the first connecting layer to be constructed in multiple parts. In particular, the at least one emitter can then be firmly connected to the submount via the first connecting layer, and the submount can then be firmly connected to the first cooling device via a further first connecting layer.In particular, such a connection is designed as a material-to-material and / or form-fitting connection, which is realized via the first connecting layer. Such a connection is realized, in particular, by diffusion, adhesion, or micro-interlocking.

[0016] An embodiment of the diode laser arrangement is preferred which is characterized in that the diode laser arrangement has a second connecting layer. Preferably, the at least one emitter is connected to the second cooling device via the second connecting layer. Such a connection can also be realized by means of a submount arranged between the at least one emitter and the second cooling device. The second connecting layer in particular has or consists of a connecting material which is selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge. By means of the second connecting layer, a low-stress or even stress-free connection of the at least one emitter to the second cooling device is advantageously possible - particularly during operation of the diode laser arrangement.

[0017] In particular, the second connecting layer is configured to firmly connect the at least one emitter to the second cooling device. It is possible for a submount to be arranged between the at least one emitter and the second cooling device, wherein in particular the at least one emitter is firmly connected to this submount via the second connecting layer, or this submount is firmly connected to the second cooling device via the second connecting layer. Such a second submount is described further below as a preferred embodiment of the diode laser arrangement. It is also possible for the second connecting layer to be constructed in multiple parts. In particular, the at least one emitter can then be firmly connected to this submount via the second connecting layer, and this submount can be firmly connected to the second cooling device via a further second connecting layer.In particular, such a connection is designed as a material-to-material and / or form-fitting connection, which is realized via the second connecting layer. Such a connection is realized, in particular, by diffusion, adhesion, or micro-interlocking.

[0018] The diode laser arrangement may comprise a clamping device configured to hold the at least one emitter and the first cooling device, and / or the at least one emitter and the second cooling device, in a predetermined position relative to one another and / or to connect them to one another, for example by pressing them against one another. In particular, submounts of the type mentioned—where provided—and the at least one emitter and / or the cooling devices are held in a predetermined position relative to one another and / or connected to one another.By means of such a clamping device, it is in particular not necessary for the at least one emitter and the first cooling device to be connected to one another via the first connecting layer, and / or for the at least one emitter and the second cooling device to be connected to one another via the second connecting layer in such a way that the at least one emitter and the first cooling device or the second cooling device are held together in the intended manner solely via the first connecting layer or the second connecting layer. It is in particular possible for the aforementioned components to then rest loosely against one another, with a fixed connection being realized by means of the clamping device.

[0019] The connecting material gold mentioned in connection with the first connecting layer and / or the second connecting layer is in particular soft gold. Soft gold is understood to mean, in particular, particularly pure gold or a gold alloy with soft components. A gold alloy of the type mentioned preferably comprises gold-tin or consists of gold-tin. A silver sintered material of the type mentioned is available as a raw material, for example as a paste, preform, or foil. For example, a paste-like silver sintered material can be applied to the first cooling device and / or the second cooling device and / or the at least one emitter using a resin dispersion system in order to produce the first or second connecting layer. Likewise, such an application can also be made to a first and / or second submount of the type described above or below.

[0020] An embodiment of the diode laser arrangement is preferred which is characterized in that the diode laser arrangement has a diode laser device which has the at least one emitter, wherein the diode laser device further has a first submount or a second submount, or alternatively a first submount and a second submount. The first connecting layer and / or the second connecting layer can each be formed in multiple parts, in particular in two parts. The at least one emitter is preferably connected to the first submount via the first connecting layer and / or to the second submount via the second connecting layer. Alternatively or additionally, the first submount is preferably connected, in particular fixedly, to the first cooling device via the first connecting layer or via a further first connecting layer.Such a further first connection layer is provided in particular when the at least one emitter is connected to the first submount via a first connection layer of the type mentioned. In particular, two analogously designed first connection layers are then provided. Alternatively or additionally, the second submount is preferably connected, in particular fixedly, to the second cooling device via the second connection layer or via a further second connection layer. Such a further second connection layer is provided in particular when the at least one emitter is connected to the second submount via a second connection layer of the type mentioned. In particular, two analogously designed second connection layers are then provided.

[0021] As an alternative to a connection between the at least one emitter and the first or second submount via the first or second connection layer, a connection can also be realized by soldering or by means of a contact foil. Such an alternative type of connection can also be provided between the first or second submount and the first or second cooling device. Alternatively or additionally, the at least one emitter can also be attached to the first submount and / or the second submount by means of a clamping device of the type already mentioned.

[0022] A submount of the type mentioned is designed in particular as a heat spreader, whereby waste heat from the at least one emitter can be particularly effectively conducted toward the first cooling device or the second cooling device. Furthermore, such a submount can compensate for mechanical stresses due to different thermal expansion coefficients of the at least one emitter and the first or second cooling device.

[0023] An embodiment of the diode laser arrangement is preferred which is characterized in that the first connecting layer or the second connecting layer, or alternatively the first connecting layer and the second connecting layer, is / are each formed as a continuous layer. A continuous layer is understood, in particular, to be a layer that is continuous in one or more directions and is produced using the respective connecting material, comprises the respective connecting material, or consists of the respective connecting material.

[0024] In particular, the first connecting layer and / or the second connecting layer are / is formed as a thick gold layer, which has a thickness of preferably at least 1 µm and at most 100 µm.

[0025] In particular, the first connecting layer and / or the second connecting layer are / is formed as a thick silver layer, which has a thickness of preferably at least 3 µm and at most 100 µm.

[0026] In particular, the first connecting layer and / or the second connecting layer are / are formed as a contact foil, in particular as a contact silver foil. Such a contact foil comprises, in particular, an electrically conductive material or is designed to be electrically conductive. Such a coherent layer can advantageously ensure a proper connection and / or a good current flow between the at least one emitter and the first or second cooling device.

[0027] An embodiment of the diode laser arrangement is preferred which is characterized in that the first connecting layer or the second connecting layer, or alternatively the first connecting layer and the second connecting layer, each has / have a plurality of geometrically delimitable subregions. The first and second connecting layers are therefore not formed as a continuous layer, but rather each have subregions spaced apart from one another.It is possible that, before assembly of the diode laser arrangement, for example before connection of the at least one emitter to a cooling device or a submount, or a connection between a submount and a cooling device, the first connecting layer and / or the second connecting layer each have a plurality of geometrically delimitable partial regions, wherein after assembly, the first connecting layer and / or the second connecting layer are / is each formed as a coherent layer at least in regions.

[0028] A connection via the first connecting layer and / or the second connecting layer is realized in particular via the respective partial regions of the first connecting layer or the second connecting layer.

[0029] The subregions of the first connecting layer and the second connecting layer can, in particular, each be substantially hump-shaped, drop-shaped, or hemispherical. A corresponding connecting material particularly preferably comprises gold or consists of gold. Such subregions made of gold or a gold alloy are also referred to as gold bumps. The aforementioned subregions, in particular the subregions formed as gold bumps, preferably have a thickness of at least 5 µm and at most 30 µm. In this way, a mechanically low-stress or even stress-free connection between the associated components can be realized during operation of the diode laser arrangement.

[0030] An embodiment of the diode laser arrangement is preferred which is characterized in that the connecting material of the first connecting layer or the connecting material of the second connecting layer, or alternatively the connecting material of the first connecting layer and the connecting material of the second connecting layer, is / are each nanoporous at least in some regions. In particular, the respective connecting material has pores whose diameters range from at least 1 nm to at most 100 nm.

[0031] The connecting material of the first connecting layer and optionally the second connecting layer comprises nanoporous gold, nanoporous silver, or consists of nanoporous gold or nanoporous silver. Such precious metals are particularly advantageous due to their oxidation resistance and ductility. For example, nanoporous gold can be made from a gold-silver material, whereby a gold sponge is essentially created by dissolving out the less noble silver, for example using acid. Analogously, nanoporous silver can be made from a silver-copper material. A first or second connecting layer formed in this way has, for example, a thickness of at least 20 µm and at most 50 µm.Such a design of the first connecting layer or the second connecting layer ensures a mechanically particularly low-stress or even stress-free connection of the associated components during operation of the diode laser arrangement.

[0032] An embodiment of the diode laser arrangement is preferred which is characterized in that the connecting material of the first connecting layer or the connecting material of the second connecting layer, or alternatively the connecting material of the first connecting layer and the connecting material of the second connecting layer, each has / has less than 5% voids. Such a void proportion relates in particular to an entire material volume of the first connecting layer and / or the second connecting layer. If the first connecting layer and / or the second connecting layer each has / has a plurality of geometrically delimitable subregions, this void proportion relates to an entire material volume of the said subregions.Such a structure of the first connecting layer or the second connecting layer enables a mechanically particularly low-stress or even stress-free connection of the associated components during operation of the diode laser arrangement.

[0033] An embodiment of the diode laser arrangement is preferred which is characterized in that the first cooling device or the second cooling device, or alternatively the first cooling device and the second cooling device, are each configured to electrically contact the at least one emitter.

[0034] Preferably, the first connecting layer and / or the second connecting layer, or the respective connecting material, are / is designed to be electrically conductive, so that in particular electrical contacting of the at least one emitter is possible via the first cooling device and the first connecting layer and / or via the second cooling device and the second connecting layer. In particular, a first submount and / or a second submount of the type mentioned are / is also designed to be electrically conductive, so that preferably a current flow between a cooling device and the at least one emitter is possible. By means of the diode laser arrangement according to the invention, particularly reliable electrical contacting of the at least one emitter can be realized.

[0035] The object is also achieved in particular by providing a method for producing a diode laser arrangement. Particularly preferably, within the scope of the method, a diode laser arrangement according to one of the previously described embodiments is produced. Within the scope of the method, the at least one emitter is arranged between the first cooling device and the second cooling device. The at least one emitter is connected to the first cooling device via the first connecting layer, wherein the first connecting layer is produced by means of a bonding process. Temperatures and pressures during the bonding process are selected in particular depending on the connecting materials used and a configuration of the bonding process.

[0036] The process offers, in particular, the advantages already explained in connection with the diode laser arrangement.

[0037] A preferred embodiment of the method is characterized in that the at least one emitter is connected to the second cooling device via the second connecting layer, and wherein the second connecting layer is produced by means of a bonding process. Temperatures and pressures during the bonding process are selected in particular depending on the connecting materials used and a configuration of the bonding process.

[0038] Preferably, the first connecting layer and the second connecting layer each comprise the same connecting material. In this way, the diode laser arrangement can be manufactured particularly economically. Alternatively, the first connecting layer and the second connecting layer can each comprise differently formed connecting materials. In this way, the properties of the connecting layers, for example a thermal expansion coefficient, can be adapted to different requirements. In particular, the expansion differences of the joining partners or the differences in the various thermal expansion coefficients can be better compensated. Furthermore, for example, a step-by-step assembly of the diode laser arrangement can be carried out by implementing connecting layers with different melting points.This prevents damage to an existing joint due to heat input from a subsequent joining process. This advantageously provides greater flexibility in the selection of process steps and materials.

[0039] A preferred embodiment of the method is characterized in that the first connecting layer or the second connecting layer, or alternatively the first connecting layer and the second connecting layer, are / is produced by means of a bonding process. Temperatures and pressures during the bonding process are selected in particular depending on the bonding materials used and a configuration of the bonding process.

[0040] A preferred embodiment of the method is characterized in that the bonding method is a method selected from a group consisting of thermocompression processes, in particular thermocompression welding, sintering, and vacuum soldering. Particularly preferably, the first bonding layer is realized analogously to the second bonding layer with respect to the method used for production. In this way, the diode laser array can be manufactured particularly economically.

[0041] The description of the diode laser arrangement, on the one hand, and the method for producing a diode laser arrangement, on the other hand, are to be understood as complementary to one another. Features of the diode laser arrangement that were explained explicitly or implicitly in connection with the method are preferably, individually or in combination with one another, features of a preferred embodiment of the diode laser arrangement. Method steps that were explained explicitly or implicitly in connection with the diode laser arrangement are preferably, individually or in combination with one another, steps of a preferred embodiment of the method. This is preferably characterized by at least one method step that is determined by at least one feature of an inventive or preferred embodiment of the diode laser arrangement.The diode laser arrangement is preferably characterized by at least one feature which is determined by at least one step of an inventive or preferred embodiment of the method.

[0042] The invention is explained in more detail below with reference to the drawings, which show: Fig. 1 a schematic representation of a first embodiment of a diode laser arrangement in longitudinal section, Fig. 2 a schematic representation of a second embodiment of the diode laser arrangement in longitudinal section, Fig. 3 a schematic representation of a third embodiment of the diode laser arrangement in longitudinal section, Fig. 4 a schematic representation of a fourth embodiment of the diode laser arrangement in longitudinal section, and Fig. 5 a schematic representation of a fifth embodiment of the diode laser arrangement in longitudinal section.

[0043] In Fig. 1, a first embodiment of a diode laser arrangement 1 is shown schematically in longitudinal section. The diode laser arrangement 1 has a diode laser device 3. The diode laser device 3 has at least one emitter 4, for example a high-power diode laser bar designed as an edge emitter. The at least one emitter 4 is configured to emit a laser beam. A laser beam axis of the laser beam is schematically indicated by an arrow P. The longitudinal section according to Fig. 1 and the Fig. 2 to 5 extends along this laser beam axis P.

[0044] The diode laser device 3 further comprises a first submount 5. The first submount 5 is arranged on a first side 7 of the at least one emitter 4. In particular, the first submount 5 is firmly connected to the at least one emitter 4, for example by soldering. For example, a p-side of the at least one emitter 4 can be arranged in the region of the first side 7. The diode laser device 3 further comprises a second submount 9. The second submount 9 is arranged on a second side 11 of the at least one emitter 4. In particular, the second submount 9 is firmly connected to the at least one emitter 4, for example by soldering. For example, an n-side of the at least one emitter 4 can be arranged in the region of the second side 11. The at least one emitter 4 is thus arranged here between the first submount 5 and the second submount 9, quasi-sandwich-like.The first submount 5 and the second submount 9 are each plate-shaped.

[0045] The diode laser arrangement 1 further comprises a first cooling device 13 and a second cooling device 15. The at least one emitter 4 and the diode laser device 3, respectively, are arranged between the first cooling device 13 and the second cooling device 15. The first cooling device 13 and the second cooling device 15 are each configured to cool the at least one emitter 4.

[0046] By means of the first submount 5 and the second submount 9, waste heat from the at least one emitter 4 can be particularly effectively transferred to the first cooling device 13 and the second cooling device 15, in particular through heat spreading. Furthermore, by means of the first submount 5 and the second submount 9, mechanical stresses due to different thermal expansion coefficients of the at least one emitter 4 and the first cooling device 13 or the second cooling device 15 can be compensated. Such a design is particularly suitable when the at least one emitter 4 is designed as a high-performance emitter.

[0047] Furthermore, the diode laser arrangement 1 has a first connecting layer 17. The at least one emitter 4 is connected to the first cooling device 13 via the first connecting layer 17. In this exemplary embodiment, the at least one emitter 4 is connected to the first cooling device 13 via the first submount 5 and the first connecting layer 17. Here, the first submount 5 is therefore connected to the first cooling device 13 via the first connecting layer 17.

[0048] The first connecting layer 17 comprises or consists of a connecting material which is selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge.

[0049] Furthermore, the diode laser arrangement 1 has a second connecting layer 19, wherein the at least one emitter 4 is connected to the second cooling device 15 via the second connecting layer 19, here via the second submount 9 and the second connecting layer 19. Here, the second submount 9 is therefore connected to the second cooling device 15 via the second connecting layer 19.

[0050] The second connecting layer 19 in particular comprises or consists of a connecting material which is selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge.

[0051] The first connecting layer 17 and the second connecting layer 19 are in Fig. 1 is shown schematically for reasons of clarity, particularly with regard to its thickness, wherein the respective thickness in a real embodiment of the diode laser arrangement 1 can be significantly smaller in relation to the diode laser device 3.

[0052] The diode laser arrangement 1 has a spacer element 21 arranged opposite the diode laser device 3. The spacer element 21 is particularly configured to set a defined spacing between the first cooling device 13 and the second cooling device 15.

[0053] Optionally, the first cooling device 13 and / or the second cooling device 15 are / are each designed such that a cooling fluid can flow through it, so that waste heat from the at least one emitter 4 can be removed. Preferably, the cooling fluid is / are not supplied to and / or removed from the first cooling device 13 via a first connecting surface 23 of the first cooling device 13, on or at which the first connecting layer 17 is arranged, or which faces the at least one emitter 4. In an analogous manner, the cooling fluid is / are preferably not supplied to and / or removed from the second cooling device 15 via a second connecting surface 25 of the second cooling device 15, on or at which the second connecting layer 19 is arranged, or which faces the at least one emitter 4.Preferably, a connection or connections for supplying and / or removing the cooling fluid are arranged laterally on the first cooling device 13 and / or the second cooling device 15. Such a lateral arrangement refers in particular to an arrangement on a surface or side of the first cooling device 13 that borders the first connecting layer 23, or an arrangement on a surface or side of the second cooling device 15 that borders the second connecting surface 25. It is also possible for such a connection to be arranged on a surface of the first cooling device 13 opposite the first connecting surface 23 and / or on a side of the second cooling device 15 opposite the second connecting surface 25. As a result, the cooling fluid can flow through the first cooling device 13 and / or the second cooling device 15 independently of one another.

[0054] Optionally, the first connecting layer 17 and / or the second connecting layer 19 - as in Fig. 1—each formed as a continuous layer. In particular, the first connecting layer 17 and / or the second connecting layer 19 can be formed as a thick gold layer, a thick silver layer, or a contact foil.

[0055] Alternatively, can / can - what in Fig. 1 is not shown - the first connecting layer 17 and / or the second connecting layer 19 each have a plurality of geometrically delimitable, in particular spaced-apart, subregions. These subregions can be formed, for example, as gold bumps.

[0056] Optionally, the connecting material of the first connecting layer 17 and / or the second connecting layer 19 is each nanoporous, at least in some regions. For example, the connecting material comprises or consists of nanoporous gold, silver, or platinum.

[0057] Optionally, the connecting material of the first connecting layer 17 and / or the second connecting layer 19 each has less than 5% voids.

[0058] Optionally, the first cooling device 13 and / or the second cooling device 15 are / are each configured to electrically contact the at least one emitter 4. In particular, the first connecting layer 17 and / or the second connecting layer 19 are / are electrically conductive, so that electrical contacting of the at least one emitter 4 can be achieved via them.

[0059] In Fig. Figure 2 shows a schematic longitudinal section of a second embodiment of the diode laser arrangement 1. Identical and functionally identical elements are provided with the same reference numerals, so that reference is made to the preceding description. The diode laser device 3 according to this embodiment has - unlike in Fig. 1 - does not have a first submount 5 or a second submount 9. Rather, the at least one emitter 4 is arranged on the first side 7 directly above the first connecting layer 17 on the first cooling device 13. Analogously, the at least one emitter 4 is arranged on the second side 11 directly above the second connecting layer 19 on the second cooling device 15. Such a design is particularly economical to implement.

[0060] In Fig. 3 shows a schematic longitudinal section of a third exemplary embodiment of the diode laser arrangement 1. Identical and functionally identical elements are provided with the same reference numerals, so that reference is made to the preceding description in this respect. The diode laser device 3 here has a first submount 5 of the type mentioned, whereas no second submount 9 of the type already mentioned is provided. Such an embodiment is particularly suitable when the laser beam is emitted near the first side 7, which is located, for example, in the region of a p-side of the at least one emitter 4. In this case, more waste heat is generated in the region of the first side 7 than in the region of the second side 11, wherein this waste heat can be dissipated via the first submount 5, in particular in a spread manner.

[0061] In Fig. Figure 4 shows a schematic longitudinal section of a fourth embodiment of the diode laser arrangement 1. Identical and functionally identical elements are provided with the same reference numerals, so that reference is made to the preceding description. The diode laser arrangement 1 is essentially analogous to Fig. 1, but has two first connecting layers 17, 17' and two second connecting layers 19, 19'. The at least one emitter 4 is connected to the first submount 5 via the first connecting layer 17 and to the second submount 9 via the second connecting layer 19. Furthermore, the first submount 5 is connected to the first cooling device 13 via a further first connecting layer 17'. The second submount 9 is connected to the second cooling device 15 via a further second connecting layer 19'.

[0062] In a further embodiment - not shown - the diode laser arrangement 1 is a combination of the embodiments according to the Fig. 1 and Fig. 4. The diode laser arrangement 1 has a first connecting layer 17 between the at least one emitter 4 and the first submount 5 and a further first connecting layer 17' between the first submount 5 and the first cooling device 13. Furthermore, the diode laser arrangement 1 has exactly one second connecting layer 19 between the second submount 9 and the second cooling device 15. A connection between the at least one emitter 4 and the second submount 9 is realized in another way, for example by means of soldering or a contact foil. Alternatively, exactly one first connecting layer 17 according to Fig. 1 and two second connecting layers 19, 19` according to Fig. 4 should be provided.

[0063] In Fig. Figure 5 shows a schematic longitudinal section of a fifth embodiment of the diode laser arrangement 1. Identical and functionally identical elements are provided with the same reference numerals, so that reference is made to the preceding description. The diode laser arrangement 1 is analogous to Fig. 3, but a first connecting layer 17 is provided between the at least one emitter 4 and the first submount 5 and a further first connecting layer 17' is provided between the first submount 5 and the first cooling device 13.

[0064] Of course, further embodiments can be formed by combining the described features, which, however, are not shown in the drawings for reasons of clarity.

[0065] The following describes a method for producing a diode laser arrangement 1, in particular a diode laser arrangement 1 according to one of the previously described embodiments. Within the scope of the method, the at least one emitter 4 is arranged between the first cooling device 13 and the second cooling device 15. The at least one emitter 4 is connected to the first cooling device 13 via the first connecting layer 17, 17', and the first connecting layer 17, 17' is produced by means of a bonding process.

[0066] Optionally, the at least one emitter 4 is connected to the second cooling device 15 via the second connecting layer 19, 19'. The second connecting layer 19, 19' is produced by means of a bonding process.

[0067] Optionally, the bonding process is a process selected from a group consisting of a thermocompression process, in particular thermocompression welding, sintering and vacuum brazing.

[0068] Overall, it can be seen that by means of the diode laser arrangement 1 according to the invention and the method for producing the diode laser arrangement 1, a mechanically low-stress or even stress-free connection of the at least one emitter 4 to the first cooling device 13 and the second cooling device 15 can be realized in an economical manner.

Claims

[1] Diode laser arrangement (1), with - at least one emitter (4), - a first cooling device (13), - a second cooling device (15), and - a first connecting layer (17, 17'), wherein - the at least one emitter (4) is arranged to emit a laser beam, wherein - the at least one emitter (4) is arranged between the first cooling device (13) and the second cooling device (15), wherein - the first cooling device (13) and the second cooling device (15) are each configured to cool the at least one emitter (4), wherein - the at least one emitter (4) is connected to the first cooling device (13) via the first connecting layer (17, 17'), and wherein - the first connecting layer (17, 17') comprises or consists of a connecting material selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge. [2] Diode laser arrangement (1) according to claim 1, which has a second connecting layer (19, 19'), wherein the at least one emitter (4) is connected to the second cooling device (15) via the second connecting layer (19, 19'), and wherein the second connecting layer (19, 19') has or consists of a connecting material which is selected from a group consisting of a nanoporous gold sponge and a nanoporous silver sponge. [3] Diode laser arrangement (1) according to one of the preceding claims, with a diode laser device (3) which has the at least one emitter (4), wherein the diode laser device (3) has a first submount (5) and / or a second submount (9), wherein the at least one emitter (4) is connected to the first submount (5) via the first connecting layer (17) and / or to the second submount (9) via the second connecting layer (19), and / or wherein the first submount (5) is connected to the first cooling device (13) via the first connecting layer (17) or a further first connecting layer (17'), and / or the second submount (9) is connected to the second cooling device (15) via the second connecting layer (19) or a further second connecting layer (19'). [4] Diode laser arrangement (1) according to one of the preceding claims, wherein the first connecting layer (17, 17') and / or the second connecting layer (19, 19') are each formed as a continuous layer. [5] Diode laser arrangement (1) according to one of the preceding claims, wherein the first connecting layer (17, 17') and / or the second connecting layer (19, 19') each have / have a plurality of geometrically delimitable partial regions. [6] Diode laser arrangement (1) according to one of the preceding claims, wherein the connecting material of the first connecting layer (17, 17') and / or the connecting material of the second connecting layer (19, 19') each have / have less than 5% voids. [7] Diode laser arrangement (1) according to one of the preceding claims, wherein the first cooling device (13) and / or the second cooling device (15) are each arranged to electrically contact the at least one emitter (4). [8] Method for producing a diode laser arrangement (1) according to one of claims 1 to 7, wherein the at least one emitter (4) is arranged between the first cooling device (13) and the second cooling device (15), wherein the at least one emitter (4) is connected to the first cooling device (13) via the first connecting layer (17, 17 ), and wherein the first connecting layer (17, 17') is produced by means of a bonding process. [9] Method according to claim 8, wherein the at least one emitter (4) is connected to the second cooling device (15) via the second connecting layer (19, 19'), and wherein the second connecting layer (19, 19') is produced by means of a bonding process. [10] The method according to any one of claims 8 to 9, wherein the bonding method is a method selected from a group consisting of a thermocompression method, sintering and vacuum brazing.

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