DIPOLIG-FABRICATED HIGH-K-GATE DIELECTRIC AND METHOD FOR FORMING THE SAME

Abstract

Procedure, comprehensive: Formation of a first oxide layer (164) on a first semiconductor region (100); Deposition of a first high-k dielectric layer (166) over the first oxide layer (164), wherein the first high-k dielectric layer (166) is formed from a first high-k dielectric material; Deposition of a first dipole film (168) over and in contact with the first high-k dielectric layer (166); Performing a first tempering process (72) to drive a first dipole dielectric in the first dipole film (168) into the first high-k dielectric layer (166); Removal of the first dipole film (168); Deposition of a second high-k dielectric layer (174) over the first high-k dielectric layer (166), wherein the second high-k dielectric layer is formed from a second high-k dielectric material that differs from the first high-k dielectric material; Deposition of a second dipole film (176) over and in contact with the second high-k dielectric layer (174); Performing a second annealing process (80) to drive a second dipole dielectric in the second dipole film (176) into the second high-k dielectric layer (174); Removal of the second dipole film (176); and Forming a first gate electrode (186) over the second high-k dielectric layer (174), wherein the first dipol doper has a first peak concentration at a first top surface of the first high-k dielectric layer (166) in a region below the gate electrode (186) and wherein the second dipol doper has a second peak concentration at the second top surface in a region below the gate electrode (186), wherein one of the first dipol doper and the second dipol doper is a lanthanum-based dipol and the other of the first dipol doper and the second dipol doper is an aluminum-based dipol doper, and both the first dipol doper and the second dipol doper have diffused into both the first high-k dielectric layer (166) and the second high-k dielectric layer (174).

Description

BACKGROUND

[0001] Metal oxide semiconductor devices (MOS devices) are fundamental components in integrated circuits (ICs). Current MOS device development involves the creation of substitute gates, which feature high-k-gate dielectrics and metal gate electrodes overlying the high-k-gate dielectrics. Creating a substitute gate typically involves depositing a high-k-gate dielectric layer and metal layers over the high-k-gate dielectric, followed by chemical-mechanical polishing (CMP) to remove excess portions of the high-k-gate dielectric and metal layers. The remaining portions of the metal layers form the metal gates.

[0002] In conventional MOS device fabrication methods, the threshold voltages can be adjusted by performing a heat annealing process involving the introduction of ammonia to treat the high-k dielectric layers. While the threshold voltage can be modified, it has been difficult to achieve precise results by adjusting the threshold voltages to desired values. Further fine-tuning has required using different exit metals and adjusting their thickness.

[0003] From DE 10 2013 204 614 A1, it is known that for a gate dielectric, a first high-k layer is formed over an oxide layer, a metal-containing top layer containing, for example, La or Al is formed on the first high-k layer, the La or Al is driven into the first high-k layer by an annealing process, the top layer is removed, and then a second high-k layer is formed on the first high-k layer. US 2011 / 0127616 A1 discloses a gate dielectric with several high-k material layers, each having dipole charges that are generated by diffusion of metal elements from a top layer, which is then removed. US 2014 / 0 124 872 A1 teaches directly applying an LaO layer to a residue of an upper of two high-k layers and diffusing La atoms from this layer into it. BRIEF DESCRIPTION OF THE DRAWINGS Aspects of this disclosure are best understood with reference to the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with industry practice, various elements are not shown to scale. In fact, the dimensions of the various elements may have been arbitrarily enlarged or reduced for the sake of clarity. Fig. Figures 1-6, 7A, 7B, 7C, 8A, 8B, 9A, 9B and 10-20 illustrate the perspective views and cross-sectional views of intermediate stages in the formation of fin field effect transistors (FinFETs) in accordance with some embodiments. Fig. 21, Fig. 22 to Fig. Figure 23 illustrates the distributions of dipol doping agents in accordance with some embodiments. Fig. Figure 24 illustrates a process flow for forming FinFETs in accordance with some embodiments. DETAILED DESCRIPTION

[0004] The following disclosure provides many different embodiments, or examples, for implementing various features of the claimed invention or for supplementary illustrative examples thereof. Specific examples of components and arrangements are described below to simplify the present disclosure. For example, the formation of a first element over or on top of a second element in the following description may include embodiments in which the first and second elements are formed in direct contact, and may also include embodiments in which additional elements may be formed between the first and second elements, such that the first and second elements might not be in direct contact. Additionally, the present disclosure may repeat reference numbers and / or letters in the different examples.This repetition serves the purpose of simplification and clarity and does not itself imply any relationship between the different embodiments and / or configurations discussed.

[0005] Furthermore, spatially relative terms such as "underlying," "below," "under," "superior," "above," and the like may be used herein to facilitate description and to describe the relationship of one element or feature to another element(s) or feature(s), as illustrated in the figures. These spatially relative terms are intended to encompass various orientations of the component in use or operation in addition to the orientation shown in the figures. The device may be oriented differently (rotated by 90 degrees or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.

[0006] Transistors with dipole high-k dielectric layers and the method for incorporating the dipole dopants into the high-k dielectric layers are provided in accordance with various embodiments. The dipole dopants are diffused into the high-k dielectric layers by thermal diffusion. The threshold voltages of the corresponding transistors are adjusted. The magnitude of the adjustment depends on the material of the high-k dielectric layer and the position of the dopant. Accordingly, more than one high-k dielectric layer is formed, which can have different dielectric constant values ​​(k-values). The dipole dopants can be selectively doped into one or more of the high-k dielectric layers to provide different threshold voltage adjustment capabilities. Furthermore, device performance is improved by doping with dipole dopants.The capacitance equivalent thickness (CET) of the high-k dielectric layers is reduced. The intermediate steps for forming the transistors are illustrated in accordance with some embodiments. Some variations of certain embodiments are discussed. Across the different views and illustrative embodiments, similar reference numbers are used to denote similar elements. In accordance with some embodiments, the formation of fin field-effect transistors (FinFETs) is used as an example to explain the concept of this disclosure. Other types of transistors, such as planar transistors and gate-all-around transistors (GAA transistors), can also adopt the concept of this disclosure.

[0007] Fig. Figures 1-6, 7A, 7B, 7C, 8A, 8B, 9A, 9B, and 10-20 illustrate the cross-sectional and perspective views of intermediate stages in the formation of fin field-effect transistors (FinFETs) in accordance with some embodiments of the present disclosure. The processes shown in these figures are also schematically represented in the Fig. The process flow shown in 24 is reflected in 400.

[0008] In Fig. Substrate 20 is provided. Substrate 20 can be a semiconductor substrate, such as a bulk semiconductor substrate, a semiconductor-on-insulator (SOI) substrate, or the like, which may be doped (e.g., with a p- or n-type dopant) or undoped. Semiconductor substrate 20 can be part of wafer 10, such as a silicon wafer. In general, an SOI substrate is a layer of semiconductor material formed on an insulating layer. The insulating layer may be, for example, a buried oxide layer (BOX layer), a silicon oxide layer, or the like. The insulating layer is provided on a substrate, typically a silicon substrate or a glass substrate. Other substrates, such as a multilayer or stepped substrate, may also be used.In some embodiments, the semiconductor material of semiconductor substrate 20 may include silicon; germanium; a compound semiconductor containing silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide and / or indium antimonide; an alloy semiconductor containing SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP and / or GaInAsP; or combinations thereof.

[0009] Further regarding Fig. 1 is trough area 22 formed in substrate 20. The corresponding process is designated as process 402 in process sequence 400, as shown in Fig. Figure 24 illustrates this. In accordance with some embodiments of the present disclosure, a trough region 22 is an n-trough region formed by implanting an n-defect, which may be phosphorus, arsenic, antimony, or the like, into substrate 20. In accordance with other embodiments of the present disclosure, a trough region 22 is a p-trough region formed by implanting a p-defect, which may be boron, indium, or the like, into substrate 20. The resulting trough region 22 may extend to the top surface of substrate 20. The n- or p-defect concentration may be equal to or less than 10 18 cm -3 be, for example, in the range between about 10 17 cm -3 and about 10 18 cm -3 .

[0010] In relation to Fig. Isolation zones 24 are formed to extend from a top surface of the substrate 20 into the substrate 20. Isolation zones 24 are hereinafter referred to alternatively as trench isolation zones (STI zones). The respective process is designated as process 404 in process sequence 400, as in Fig. Figure 24 illustrates this. The sections of substrate 20 between adjacent STI regions 24 are designated as semiconductor strips 26. To form STI regions 24, pad oxide layer 28 and hard mask layer 30 are formed on semiconductor substrate 20 and then patterned. Pad oxide layer 28 can be a thin film formed from silicon oxide. In accordance with some embodiments of the present disclosure, pad oxide layer 28 is formed in a thermal oxidation process, wherein a top surface layer of semiconductor substrate 20 is oxidized. Pad oxide layer 28 acts as an adhesive layer between semiconductor substrate 20 and hard mask layer 30. Pad oxide layer 28 can also act as an etch stop layer for etching hard mask layer 30. In accordance with some embodiments of the present disclosure, the hard mask layer 30 made of silicon nitride is formed, for example, using low-pressure chemical vapor deposition (LPCVD).In accordance with other embodiments of the present disclosure, the hard mask layer 30 is formed by thermal nitriding of silicon or plasma-enhanced chemical vapor deposition (PECVD). A photoresist (not shown) is formed on the hard mask layer 30 and then patterned. The hard mask layer 30 is then patterned using the patterned photoresist as an etching mask to create hard masks 30 as shown in [reference]. Fig. 2 shown to form.

[0011] Next, the structured hard mask layer 30 is used as an etching mask to etch the pad oxide layer 28 and substrate 20, followed by filling the resulting trenches in substrate 20 with dielectric material(s). A planarization process, such as a chemical-mechanical polishing (CMP) process or a mechanical grinding process, is performed to remove excess sections of the dielectric material(s), and the remaining sections of the dielectric material(s) are STI regions 24. STI regions 24 may contain a lining dielectric (not shown), which may be a thermal oxide formed by thermal oxidation of a surface layer of substrate 20.The lining dielectric can also be a deposited silicon oxide layer, silicon nitride layer, or the like, formed using, for example, atomic layer deposition (ALD), high-density plasma vapor deposition (HDPCVD), or chemical vapor deposition (CVD). STI areas 24 can also have a dielectric material over the lining oxide, wherein the dielectric material can be formed using flowable chemical vapor deposition (FVCD), spin-on coating, or the like. According to some embodiments, the dielectric material over the lining dielectric can contain silicon oxide.

[0012] The top surfaces of hard masks 30 and the top surfaces of STI regions 24 can be essentially flat. Semiconductor strips 26 are located between adjacent STI regions 24. According to some embodiments of the present disclosure, semiconductor strips 26 are part of the original substrate 20, and therefore the material of semiconductor strips 26 is the same as that of substrate 20. According to alternative embodiments of the present disclosure, semiconductor strips 26 are replacement strips formed by etching the sections of substrate 20 between STI regions 24 to create depressions and performing epitaxy to regrow a different semiconductor material in the depressions. Accordingly, semiconductor strips 26 are formed from a semiconductor material different from that of substrate 20.In accordance with some embodiments, semiconductor strips 26 are formed from silicon germanium, silicon carbon or a III-V compound semiconductor material.

[0013] In relation to Fig. 3. STI regions 24 are deepened so that the top surfaces of semiconductor strips 26 protrude higher than the top surfaces 24A of the remaining sections of STI regions 24 to form protruding fins 36. The corresponding process is referred to as process 406 in process sequence 400, which is described in Fig. Figure 24 illustrates this. Etching can be carried out using a dry etching process, where, for example, the mixture of HF3 and NH3 is used as the etching gas. Plasma can be generated during the etching process. Argon may also be included. In accordance with alternative embodiments of the present disclosure, the deepening of STI areas 24 is carried out using a wet etching process. The etching chemical may, for example, contain HF.

[0014] In previously illustrated embodiments, the fins can be structured by any suitable method. For example, the fins can be structured using one or more photolithography processes, including dual-structuring or multiple-structuring processes. In general, dual-structuring and multiple-structuring processes combine photolithography and self-aligning processes, which allows structures to be produced that, for example, have smaller spacings than would otherwise be obtainable using a single direct photolithography process. For example, in one embodiment, a sacrificial layer is formed over a substrate and structured using a photolithography process. Spacers are formed along the structured sacrificial layer using a self-aligning process.The sacrificial layer is then removed and the remaining spacers, or support mandrels, are used to structure the fins.

[0015] In relation to Fig. 4. Dummy gate stacks 38 are formed to extend along the top surfaces and side walls of (projecting) fins 36. The respective process is designated as process 408 in the process flow 400, as shown in Fig. 24 shown, illustrated. Dummy gate stack 38 can dummy gate dielectrics 40 (in Fig. 7B and Fig. (7C shown) and dummy gate electrodes 42 over dummy gate dielectrics 40. Dummy gate electrodes 42 can be formed, for example, using polysilicon or amorphous silicon, and other materials can also be used. Each dummy gate stack 38 can also have one (or a plurality of) hard mask layer(s) 44 over dummy gate electrodes 42. Hard mask layers 44 can be formed from silicon nitride, silicon oxide, silicon carbonitride, or multiple layers thereof. Dummy gate stacks 38 can cross a single or a plurality of projecting fins 36 and / or STI regions 24. Dummy gate stacks 38 also have longitudinal directions perpendicular to the longitudinal directions of projecting fins 36.

[0016] Next, gate spacers 46 are formed on the side walls of dummy gate stacks 38. The respective process is also referred to as process 408 in the process flow 400, as in Fig. 24 shown. In accordance with some embodiments of the present disclosure, gate spacers 46 are formed from (a) dielectric material(s), such as silicon nitride, silicon carbonitride or the like, and can have a single-layer structure or a multi-layer structure having a plurality of dielectric layers.

[0017] The sections of protruding fins 36 that are not covered by dummy gate stacks 38 and gate spacers 46 are then etched, which is shown in the Fig. The structure shown in section 5 results. The corresponding process is designated as process 410 in process flow 400, which is shown in Fig. Figure 24 illustrates this. The recess can be anisotropic, and therefore the sections of fins 36 that lie directly beneath dummy gate stacks 38 and gate spacers 46 are protected and are not etched. The top surfaces of the recessed semiconductor strips 26 can be lower than the top surfaces 24A of STI areas 24 in accordance with some embodiments. Recesses 50 are formed accordingly. Recesses 50 have sections that lie on the opposite sides of dummy gate stacks 38 and sections between remaining sections of projecting fins 36.

[0018] Next, epitaxial regions (source / drain regions) 52 are formed by selective growth (by epitaxy) of a semiconductor material in wells 50, which is shown in the structure in Fig. 6 results. The respective process is designated as process 412 in process flow 400, which is in Fig. Figure 24 illustrates this. Depending on whether the resulting FinFET is a p-FinFET or an n-FinFET, a p- or an n-defect site can be doped in situ as epitaxy progresses. For example, if the resulting FinFET is a p-FinFET, silicon germanium boron (SiGeB), silicon boron (SiB), or the like can be grown. Conversely, if the resulting FinFET is an n-FinFET, silicon phosphorus (SiP), silicon carbon phosphorus (SiCP), or the like can be grown. In accordance with alternative embodiments of the present disclosure, epitaxial regions feature 52 III-V compound semiconductors, such as GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlAs, AlP, GaP, combinations thereof, or multiple layers thereof.Once depressions 50 are filled with epitaxial regions 52, further epitaxial growth of epitaxial regions 52 causes them to expand horizontally, and facets can be formed. Further growth of epitaxial regions 52 can also cause adjacent epitaxial regions 52 to converge. Voids (air gaps) 53 can be created.

[0019] Following the epitaxial process, epitaxial regions 52 can be further implanted with a p- or n-defect site to form source and drain regions, which are also labeled using reference numerals 52. In accordance with alternative embodiments of the present disclosure, the implantation process is omitted if epitaxial regions 52 are doped in situ with the p- or n-defect site during epitaxy.

[0020] Fig. Figure 7A illustrates a perspective view of the structure after the formation of the contact etch stop layer (CESL) 58 and the interlayer dielectric (ILD) 60. The corresponding process is designated as process 414 in process sequence 400, which is described in Fig. Figure 24 illustrates this. CESL 58 can be formed from silicon oxide, silicon nitride, silicon carbonitride, or the like, and can be formed using CVD, ALD, or the like. ILD 60 can be a dielectric material formed using, for example, FCVD, spin-on coating, CVD, or another deposition process. ILD 60 can be an oxygen-containing dielectric material, which is a silicon oxide-based material formed using tetraethyl orthosilicate (TEOS) as a precursor, phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), or the like. A planarization process, such as a CMP process or a mechanical grinding process, can be performed to flatten the top surfaces of ILD 60, dummy gate stacks 38, and gate spacers 46 against each other.

[0021] Fig. 7B and Fig. Figure 7C illustrates the cross-sectional views of an intermediate structure in the formation of a first FinFET and a second FinFET on the same substrate 20 (and in the same die and the same wafer). The cross-sectional views of both the first FinFET and the second FinFET, shown in Fig. The figures shown in 7B can correspond to the cross-sectional view obtained from the vertical plane, which is line AA in Fig. 7A includes the cross-sectional views of both the first and second FinFETs, which are shown in Fig. Figure 7C can correspond to the cross-sectional view obtained from the vertical plane, line BB in Fig. 7A is included. In accordance with some embodiments, the first FinFET is a logic device (sometimes referred to as a core device) and is formed in device area 12-LG. The second FinFET is an input-output device (IO device) formed in device area 12-IO.

[0022] After the in Fig. 7A, Fig. 7B and Fig. Once the structure shown in Figure 7C is formed, the hard mask layers 44 and dummy gate electrodes 42 are removed, leaving openings 61 as shown in Figure 7C. Fig. 8A is shown. The corresponding process is designated as process 416 in process flow 400, as shown in Fig. Figure 24 illustrates this. The top surfaces and side walls of projecting fins 36 in component areas 12-LG and 12-IO are both exposed. Next, an etching mask such as a photoresist 62 is formed in component area 12-IO to protect the dummy gate dielectric 40 in component area 12-IO. Fig. Figure 8B illustrates the structure in a different cross-section.

[0023] In a subsequent process, the dummy gate dielectric 40 in component area 12-LG is removed, for example, by an isotropic etching process, which can be a dry or wet etching process. Etching mask 62 ( Fig. 8B and Fig. 8C) is then removed. The resulting structure is in Fig. 9A and Fig. 9B is shown. The corresponding process is designated as process 418 in process flow 400, as shown in Fig. 24 shown, illustrated.

[0024] Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15, Fig. 16, Fig. 17, Fig. 18, Fig. 19 to Fig. Figure 20 illustrates the formation of gate stacks of a FinFET in device area 100 and a FinFET in device area 200, and the dipole fabrication process according to some embodiments. According to some embodiments, both device area 100 and 200 can be selected from a core device area, an I / O device area, a memory device area, or the like, in any combination. For example, device area 100 can be a core device area (such as area 12-LG in Figure 20). Fig. 9A and Fig. 9B), while component area 200 can be an IO component area (like area 12-IO in Fig. 9A and Fig. 9B). Device regions 100 and 200 can both be core device regions, both be I / O regions, both be memory regions, or the like. Furthermore, both the first FinFET and the second FinFET can be an n-FinFET or a p-FinFET in any combination. For example, both of the FinFETs in device regions 100 and 200 can be n-FinFETs or p-FinFETs according to some embodiments. According to alternative embodiments of the present disclosure, the FinFET in device region 100 is an n-FinFET and the FinFET in device region 200 is a p-FinFET. Alternatively, the FinFET in device 100 is a p-FinFET and the FinFET in device 200 is an n-FinFET. In the following illustrated example, it is assumed that both component area 100 and 200 are logic FinFETs and that the corresponding gate dielectrics 40 are replaced by interface layers.In accordance with alternative embodiments, one or both of the component areas 100 and 200 are I / O component areas. The formation of replacement gate stacks for the I / O components is essentially the same as in [reference missing]. Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15, Fig. 16, Fig. 17, Fig. 18, Fig. 19 to Fig. 20 shown, except that the gate dielectric 40 is not replaced by interface layers.

[0025] To distinguish the elements in component area 100 from the elements in component area 200, the elements in component area 100 can be identified using the reference symbols of the corresponding elements in Fig. 7A plus the number 100 should be represented, and the elements in component area 200 can be identified using the reference symbols of the corresponding elements in Fig. 7A plus the number 200 will be represented. For example, source / drain areas 152 and 252 correspond to these. Fig. 10 Source / Drain area 52 in Fig. 7A, and gate spacers 146 and 246 in Fig. 10 correspond to the gate spacers 46 in Fig. 7A.

[0026] In relation to Fig. 10. Interface layers (ILs) 164 and 264 are formed. The corresponding process is designated as process 420 in process sequence 400, as shown in Fig. Figure 24 illustrates ILs 164 and 264 are formed on the upper surfaces and side walls of projecting fins 136 and 236, wherein Fig. Figure 10 illustrates the sections of ILs 164 and 264 on the top surfaces of projecting fins 136 and 236. In accordance with alternative embodiments in which a component region is an IO region, the original gate dielectric 40 remains ( Fig. 9B) and the subsequently deposited high-k dielectric layer is formed over the original gate dielectric 40. IL 164 and 264 may have oxide layers such as silicon oxide layers formed by a thermal oxidation process or a chemical oxidation process to oxidize the surface sections of protruding fins 136 and 236. ILs 164 and 264 may also be formed by a deposition process. The chemical oxidation process may be carried out using a chemical solution (sometimes referred to as Standard Cleaning 1 solution (SC1 solution)) containing NH4OH, H2O2, and H2O. The chemical oxidation process may also be carried out using a sulfur peroxide mixture solution (SPM solution), which is a solution of sulfuric acid and hydrogen peroxide. Alternatively, the chemical oxidation process may be carried out using a chemical solution containing ozone (O3) dissolved in water.

[0027] In accordance with alternative embodiments, ILs 164 and 264 are formed by thermal oxidation, which can be carried out in process gases such as N₂O, O₂, a mixture of N₂O and H₂, a mixture of H₂ and O₂, or the like. The oxidation temperature can be in the range between about 500 °C and about 1,000 °C. In accordance with some embodiments, the gate dielectric 40 of the IO device has a thickness T1 ( Fig. 9B) greater than about 1.5 nm (about 15 Å) and can range between about 1.5 nm and about 5 nm (between about 15 Å and about 50 Å). The thickness T2 of the replacement ILs (such as ILs 164 and 264 in Fig. 10) is smaller than thickness T1. In accordance with some embodiments, thickness T2 is in the range between about 0.5 nm and about 1.5 nm (between about 5 Å and about 15 Å).

[0028] Next, regarding Fig. In step 11, the first high-k dielectric layers 166 and 266 are deposited over the corresponding ILs 164 and 264. The corresponding process is designated as process 422 in process sequence 400, as shown in Fig. Figure 24 illustrates this. High-k dielectric layers 166 and 266 can be formed from a high-k dielectric material such as hafnium oxide (HfO2), zirconium oxide (ZrO2), titanium oxide (TiO2), or the like, or combinations thereof, such as HfZrO, HfTiO, or the like. The high-k dielectric material can be pure (such as pure HfO2). 2,The high-k dielectric material must be pure ZrO2 or pure TiO2, or substantially pure (for example, with a higher atomic percentage than approximately 90 or 95 percent). The dielectric constant (k-value) of the high-k dielectric material is greater than 3.9 and may be greater than approximately 7.0. High-k dielectric layers 166 and 266 lie above and may be in physical contact with the respective underlying ILs 164 and 264 (or gate dielectric layers 40). High-k dielectric layers 166 and 266 are formed as conformal layers and extend along the sidewalls of projecting fins 136 and 236 and the top surfaces and sidewalls of gate spacers 146 and 246, respectively. In accordance with some embodiments of the present disclosure, high-k dielectric layers 166 and 266 are formed using ALD or CVD. The deposition temperature can be in the range of about 200 °C to about 400 °C.The thickness T3 can range from approximately 0.6 nm to approximately 2 nm (between approximately 6 Å and approximately 20 Å). The first high-k dielectric layers 166 and 266 can be deposited in a common process and are therefore formed from the same material, or they can be deposited in different processes and can be formed from different materials.

[0029] Further regarding Fig. 11. A first dipole film is deposited in a deposition process. The corresponding process is designated as process 424 in process sequence 400, as shown in Fig. Figure 24 illustrates this. The dipole film comprises dipole film (section) 168 in component area 100 and dipole film (section) 268 in component area 200. Dipole films 168 and 268 are formed by a conformal deposition process, such as an ALD process or a CVD process, such that the horizontal thickness of the horizontal sections and the vertical thickness of the vertical sections of dipole films 168 and 268 are substantially the same, with, for example, a variation in thickness of less than about 20 percent or 10 percent. In accordance with some embodiments of the present disclosure, dipole films 168 and 268 extend into openings 161 and 261 and have some sections extending over ILD 60.

[0030] Dipole films 168 and 268 contain a dipole-technology dopant (hereinafter referred to as the dipole dopant), such as lanthanum, aluminum, yttrium, titanium, magnesium, niobium, gallium, indium, or the like. These elements, when diffused into high-k dielectric layers, can increase the number of dipoles and result in a change in the threshold voltages (Vts) of the respective FinFETs. The effect of different dipole dopants on p-transistors and n-transistors can differ. For example, La-based dipole dopant will result in a reduction of the Vt of n-transistors and an increase in the Vt of p-transistors. Conversely, Al-based dipole dopant will result in an increase in the Vt of n-transistors and a reduction in the Vt of p-transistors.Each dopant can exist in both an n-transistor and a p-transistor simultaneously, and any combination of different dopants (as mentioned above) can exist in an n-FinFET or a p-transistor, or in both a p-transistor and an n-transistor simultaneously.

[0031] The dipole films 168 and 268 can be oxides and / or nitrides of the dipole diluent. For example, the La-containing dipole films 168 and 268 can be in the form of lanthanum oxide (La₂O₃), lanthanum nitride (LaN), or the like, or combinations thereof. The Al-containing dipole films 168 and 268 can be in the form of aluminum oxide (Al₂O₃), aluminum nitride (AlN), or the like, or combinations thereof. The thickness T₄ of dipole films 168 and 268 can range from 0.03 nm to approximately 3 nm (between approximately 0.3 Å and approximately 30 Å). It is realized that the thickness T4 of dipole film 168 and 268 is generally related to the magnitude of the intended threshold voltage setting, with the thickness T4 being greater the greater the intended threshold voltage setting.

[0032] In relation to Fig. 12. Etching mask 70 is formed and structured. In accordance with some embodiments, etching mask 70 has an antireflective base coating (BARC) 70A and a photoresist 70B over BARC 70A. A hard mask (not shown) can also be added beneath BARC 70A to aid the etching process. The hard mask can be formed from a metal oxide, such as titanium oxide or boron nitride, a metal nitride, such as titanium nitride, or it can have a metal nitride layer over a metal oxide layer.

[0033] Next, an etching process is carried out in which etching mask 70 is used to remove dipole film 168. The corresponding process is designated as process 426 in process flow 400, as shown in Fig. Figure 24 illustrates this. As a result, high-k dielectric layer 166 is exposed. The resulting structure is shown in Fig. Figure 13 shows that, in accordance with some embodiments of the present disclosure, the etching process is carried out by wet etching. For example, if Dipolfilm 168 is formed as the La-based material, an acidic wet etching chemical solution can be used. For example, the wet etching chemical can contain an acid such as HCl, H₂SO₄, H₂CO₃, HF, or the like, and the acid can be mixed with hydrogen peroxide (H₂O₂) and water and / or the like. If Dipolfilm 168 is formed as the Al-based material, an alkaline wet etching chemical solution can be used. For example, the wet etching chemical can contain ammonia (NH₃), hydrogen peroxide (H₂O₂), and water and / or the like.

[0034] Etching mask 70 is then removed, which is in the Fig. The structure shown in Figure 14 results in a dipole film 268 remaining over high-k dielectric layer 266, while no dipole film exists over high-k dielectric layer 166. Further, regarding Fig. 14. Drive-in tempering process 72 is carried out. The corresponding process is designated as process 428 in process flow 400, as shown in Fig. Figure 24 illustrates this. In accordance with some embodiments, the tempering process 72 is carried out by soaking tempering, rapid temperature peaking, or the like. If soaking tempering is used, the tempering time can be in the range of about 5 seconds to about 5 minutes. The tempering temperature can be in the range of about 500 °C to about 950 °C. The tempering process can be carried out in a process gas such as N2, H2, NH3, or a mixture thereof. If the rapid temperature peaking process is used, the tempering time can be in the range of about 0.5 seconds to about 3.5 seconds. The tempering temperature can be in the range of about 700 °C to about 950 °C. The tempering process can also be carried out in a process gas such as N2, H2, NH3, or a mixture thereof. The tempering results in the dipol dielectric being driven into the high-k dielectric layer 266.Throughout the description, the high-k dielectric layer 266, which is doped with the dipol dopant, is referred to as the (dipol-doping) high-k dielectric layer 266'. Due to the nature of diffusion, the highest concentration of the dipol dopant is at the interface between layer 266' and 268, and the dopant concentration decreases stepwise in the directions of arrows 73. In accordance with some embodiments, the dosage of the dipol dopant in the high-k dielectric layer and the underlying layers is in the range of approximately 0 atoms / cm². 2 and about 1E17 atoms / cm² 2 .

[0035] Following the drive-in tempering process 72, dipole film 268 is removed in an etching process. The corresponding process is designated as process 430 in process sequence 400, which is described in Fig. Figure 24 illustrates this. The etching process can be selected from the same group of candidate processes and use the same group of etching chemicals as the one shown in Figure 24. Fig. The etching process is shown in Figure 12. The details are therefore not repeated here. The resulting structure is in Fig. 15 shown.

[0036] In accordance with embodiments of the invention and / or in another component domain according to the claimed invention, the process for removing dipole film 168 prior to the drive-in tempering process 72 is omitted. Accordingly, the dipole doping agent in dipole film 168 is also diffused into high-k dielectric 166. In accordance with these embodiments, both the high-k dielectric layer 166 and 266 are doped with dipole doping agents.

[0037] Fig. 16, Fig. 17, Fig. 18, Fig. 19 to Fig. Figure 20 illustrates the deposition of a second high-k dielectric layer and a second drive-in annealing process in accordance with some embodiments. It is welcome that some of the materials and process details may be the same as the preceding processes described in Fig. 11, Fig. 12, Fig. 13, Fig. 14 to Fig. These details are shown in section 15. They are not repeated and can be found in the description of the preceding processes.

[0038] In relation to Fig. 16. High-k dielectric layers 174 and 274 are deposited. The respective process is designated as process 432 in process sequence 400, which is in Fig. Figure 24 illustrates this. The material of high-k dielectric layers 174 and 274 can be obtained from the same group of candidate materials for forming high-k dielectric layers 166 and 266 ( Fig. 11) can be selected and may contain HfO2, ZrO2, TiO2, or the like, or combinations thereof, such as HfZrO, HfTiO, or the like. High-k dielectric layers 174 and 274 are superimposed on and may be in contact with the respective underlying high-k dielectric layers 166 and 266. In accordance with some embodiments of the present disclosure, high-k dielectric layers 174 and 274 are formed using ALD or CVD. The deposition temperature may be in the same range between about 200 °C and about 400 °C. The thickness T5 may be equal to or less than the thickness of the underlying high-k dielectric layers 166 and 266. For example, thickness T5 may be in the range between about 0.1 nm and about 2 nm (between about 1 Å and about 20 Å).

[0039] In some embodiments, high-k dielectric layers 174 and 274 are formed from a material having a lower k-value than the k-value of high-k dielectric layer 166. For example, high-k dielectric layers 174 and 274 can be formed from HfO₂, while high-k dielectric layers 166 and 266 can be formed from ZrO₂ or TiO₂. In alternative embodiments, high-k dielectric layers 174 and 274 have the same k-value and are formed from the same material as high-k dielectric layers 166 and 266. In still alternative embodiments, high-k dielectric layers 164 and 274 have a higher k-value than high-k dielectric layers 166 and 266. For example, high-k dielectric layers 174 and 274 can be formed from ZrO2 or TiO2, while high-k dielectric layers 166 and 266 can be formed from HfO2.

[0040] Further regarding Fig. 16. Dipole films 176 and 276 are formed by a conformal deposition process, such as an LAD process or a CVD process. The corresponding process is designated as process 434 in process flow 400, as in Fig. Figure 24 illustrates this. Dipole films 176 and 276 contain a dipole dilating agent, such as lanthanum (like La₂O₃ or LaN), aluminum (like Al₂O₃ or AlN), or the like. The thickness T₆ of dipole films 176 and 276 can range from about 0.03 nm to about 3 nm (between about 0.3 Å and about 30 Å).

[0041] Fig. Figure 16 further illustrates the formation of etch mask 78, which may have a similar structure to that of etch mask 70. The details are therefore not repeated here. In a subsequent process, an etching process is carried out to remove dipole film 276, thereby exposing high-k dielectric layer 274, as shown in Fig. 17. The corresponding process is shown as process 436 in process flow 400, as in Fig. Figure 24 illustrates the process. The etching process can be the same as that shown in Fig. 12 and Fig. 13 shown. Etching mask 78 (in Fig. (shown in 16) is then removed, revealing dipole film 176.

[0042] Further regarding Fig. 17. Drive-in annealing process 80 is carried out. The corresponding process is designated as process 438 in process flow 400, as in Fig. Figure 24 illustrates the drive-in tempering process 80, which is similar to the drive-in tempering process 72. Fig. 14 and the details are therefore not repeated here. The dipole doping agent in dipole film 176 is doped in high-k dielectric layer 174 and possibly high-k dielectric layer 166 at a lower doping concentration than in high-k dielectric layer 174. In subsequent paragraphs, the high-k dielectric layer 174, which incorporates the dipole doping agent, is referred to as (dipole-doping agent-containing) high-k dielectric layer 174'.

[0043] After the drive-in tempering process, dipole film 176 is removed in an etching process. This process is designated as process 440 in process sequence 400, as shown in Fig. Figure 24 illustrates this. The etching process can be selected from the same group of candidate processes and use the same group of candidate etching chemicals as the one shown in Figure 24. Fig. The etching process is shown in Figure 12. The details are therefore not repeated here. The resulting structure is in Fig. 18 shown.

[0044] In accordance with alternative embodiments and / or in another device domain, the process for removing dipole film 276 prior to drive-in annealing process 80 is omitted. Accordingly, the dipole doping agent in dipole film 276 is also diffused into high-k dielectric layer 274. In accordance with these embodiments, both high-k dielectric layer 174 and 274 are doped with dipole doping agents.

[0045] As mentioned previously, the k-value of the lower high-k dielectric layer 166 / 266 can be less than, equal to, or greater than the k-value of the upper high-k dielectric layer 174 / 274. Furthermore, dipole doping can be performed on either the lower high-k dielectric layer (such as 266) or the upper high-k dielectric layer (such as 174). Doping of the lower high-k dielectric layer has a different effect on adjusting Vt than doping of an upper high-k dielectric layer. For example, doping of a lower high-k dielectric layer can change Vt more than doping of an upper high-k dielectric layer. Additionally, doping a high-k dielectric layer with a lower k-value has a different effect on adjusting Vt than doping a high-k dielectric layer with a higher k-value.For example, doping a lower high-k dielectric layer with a higher k-value can change Vt more than doping a high-k dielectric layer with a lower k-value. Therefore, by selecting whether the upper high-k dielectric layer has a higher, the same, or lower k-value (three possibilities) than the lower high-k dielectric layer, and by selecting whether to dope the upper high-k dielectric layer, the lower high-k dielectric layer, or both (three possibilities), 9 (3x3) potential Vt adjustment levels are achieved. In accordance with some embodiments, the FinFETs with these different Vt adjustment levels are formed on the same chip according to the design requirement.Additionally, since different dipol dopers, such as La and Al, also exhibit different Vt-adjusting capabilities, the Vt-adjusting levels are further multiplied by using different dipol dopers for different FinFETs.

[0046] Fig. Figure 19 illustrates the formation of gate electrodes 186 and 286, which exhibit stacked layers 182 and 282, respectively, and potential metal filling regions 184 and 284. The corresponding process is designated as process 442 in process sequence 400, which is described in Fig. Figure 24 illustrates this. In accordance with some embodiments of the present disclosure, each of the stacked layers 182 and 282 has an adhesive layer (also known as a barrier layer, not shown) which may be formed of TiN, TiSiN, or the like. The stacked layers 182 and 282 also have working exit layers which may contain a TiN layer, TaN, and / or an Al-based layer (formed of, for example, TiAlN, TiAlC, TaAlN, or TaAlC), depending on whether the respective FinFETs are p-FinFETs or n-FinFETs. A barrier layer (not shown) and a filler metal, represented by layers 184 and 284, are then deposited if layers 182 and 282 have not completely filled any trenches. Otherwise, layers 184 and 284 are not required. A planarization process, such as a CMP process or a mechanical grinding process, is then carried out, forming gate electrodes 186 and 286.Replacement gate stacks 188 and 288, comprising the corresponding gate electrodes 186 and 286 and the corresponding gate dielectrics 164 / 166 / 174' and 264 / 266' / 274, are also formed. FinFETs 190 and 290 are therefore formed.

[0047] In relation to Fig. Gate stacks 188 and 288 are recessed and filled with a dielectric material (such as SiN) to form hard masks 192 and 292. Etch stop layer 93 is formed over hard masks 192 and 292 and ILD 60. Etch stop layer 93 is formed from a dielectric material that may contain silicon carbide, silicon nitride, silicon oxynitride, or the like. ILD 94 is formed over etch stop layer 78, and gate contact plugs 195 and 295 are formed.

[0048] Fig. Figure 21 illustrates the distribution of dipol doping agents in some sections of the gate stack, which is shown in Fig. 20 are shown. An enlarged view of area 502 in Gate Stack 188 ( Fig. 20) and an enlarged view of area 504 ( Fig. 20) in Gate Stack 288 are in Fig. Figure 21 shows the schematic dopant concentrations. The schematic dopant concentrations are shown on the left side of the corresponding enlarged views of regions 502 and 504. In region 502, prior to the formation of stacked metal layers 182, the peak dipole concentration occurs at the top surface of the high-k dielectric layer 174'. In subsequent thermal processes, the dipole dopant diffuses upwards and downwards, resulting in the dopant profile shown in Figure 21. Fig. Figure 21 shows the peak dipole concentration profile 506 at (or just below) the top surface of high-k dielectric layer 174'. The dipole dopant concentration decreases stepwise in both the upward and downward directions. In region 504, the peak dipole dopant concentration profile 508 is at (or just below) the top surface of high-k dielectric layer 266' and decreases stepwise in both the upward and downward directions.

[0049] Fig. Figure 22 illustrates the dopant concentration according to one embodiment of the claimed invention, assuming that when the drive-in tempering process 72 is carried out as in Fig. 14 is carried out, the doping film 168 ( Fig. 12) is not removed. Accordingly, in area 502, high-k dielectric layers 166 are also diffused with dipole dopant, and therefore the high-k dielectric layers 166' are formed. The resulting dipole dopant concentration profiles 510 and 512 are illustrated schematically, where dipole dopant concentration profile 510 represents the dopant of dipole film 168, which has its peak at (or just below) the top surface of high-k dielectric layer 166'. Dipold dopant concentration profile 512 represents the dopant of dipole film 176, which has its peak at (or just below) the top surface of high-k dielectric layers 174'. The total dipole dopant concentration is therefore the sum of dipole dopant concentration profiles 510 and 512. For example, one of the dopant profiles 510 may be La, while the other may be Al.Although La and Al have opposing effects (one increasing Vt and the other decreasing Vt), the combination results in an additional Vt level.

[0050] Fig. Figure 23 illustrates an exemplary embodiment in which each of the high-k dielectric layers 166 and 174 is formed by a plurality of deposition processes to form a plurality of sublayers. A plurality of dipole film deposition processes, drive-in annealing processes, and dopant film removal processes are employed between the plurality of deposition processes for each sublayer of the high-k dielectric layer 166 and 174. In accordance with these embodiments, the sublayers of the high-k dielectric layer 166 are formed from the same high-k dielectric material and have the same k-value. The initial dipole dopants of the sublayers of the high-k dielectric layer 166 are also the same. Similarly, the sublayers of the high-k dielectric layer 174 are formed from the same high-k dielectric material and have the same k-value.The second dipol dopers of the sublayers of high-k dielectric layer 174 are also the same. The profile of the first dipol dopers is shown as 514 and the profile of the second dipol dopers is shown as 516. The alternating deposition and drive-in annealing processes can result in a more uniform dipol doper distribution.

[0051] It is understood that the aforementioned embodiments, encompassing Fig. 21, Fig. 22 and Fig. 23, in the same chip and on the same semiconductor substrate 20 can coexist. In addition, more (such as 1, 2 or 3) high-k dielectric layers can be placed over the in Fig.The 20 dielectric layers shown are formed, with each of the high-k dielectric layers being doped or undoped by a corresponding subsequent dipole doping deposition and a drive-in annealing process. This creates more Vt tuning levels for different FinFETs on the same chip.

[0052] The embodiments of the present disclosure exhibit several advantageous features. By forming multiple high-k dielectric layers exhibiting the same or different k-values, and furthermore by selecting doping dipole dopants for specific high-k dielectric layers, multiple levels of Vt adjustment can be achieved for different circuit requirements. Doping dipoles improves the CET values ​​of the transistors and enhances the CET scaling capability.

[0053] The invention is defined by the main claim and the dependent claims. Further embodiments of the invention are described by the dependent claims.

Claims

[1] Procedure, encompassing: Formation of a first oxide layer (164) on a first semiconductor region (100); Deposition of a first high-k dielectric layer (166) over the first oxide layer (164), wherein the first high-k dielectric layer (166) is formed from a first high-k dielectric material; Deposition of a first dipole film (168) over and in contact with the first high-k dielectric layer (166); Performing a first tempering process (72) to drive a first dipole dielectric in the first dipole film (168) into the first high-k dielectric layer (166); Removal of the first dipole film (168); Deposition of a second high-k dielectric layer (174) over the first high-k dielectric layer (166), wherein the second high-k dielectric layer is formed from a second high-k dielectric material that differs from the first high-k dielectric material; Deposition of a second dipole film (176) over and in contact with the second high-k dielectric layer (174); Performing a second annealing process (80) to drive a second dipole dielectric in the second dipole film (176) into the second high-k dielectric layer (174); Removal of the second dipole film (176); and Forming a first gate electrode (186) over the second high-k dielectric layer (174), wherein the first dipol doper has a first peak concentration at a first top surface of the first high-k dielectric layer (166) in a region below the gate electrode (186) and wherein the second dipol doper has a second peak concentration at the second top surface in a region below the gate electrode (186), wherein one of the first dipol doper and the second dipol doper is a lanthanum-based dipol and the other of the first dipol doper and the second dipol doper is an aluminum-based dipol doper, and both the first dipol doper and the second dipol doper have diffused into both the first high-k dielectric layer (166) and the second high-k dielectric layer (174). [2] Method according to claim 1, wherein the thickness (T3) of the first high-k dielectric layer (166) is between 0.6 nm and 2 nm. [3] Method according to claim 1, wherein the thickness (T5) of the second high-k dielectric layer (174) is between 0.1 nm and 2 nm. [4] Method according to any of the preceding claims, wherein the second high-k dielectric layer (174) has a higher k-value than the first high-k dielectric layer (166). [5] Method according to any one of claims 1 to 3, wherein the second high-k dielectric layer (174) has a lower k-value than the first high-k dielectric layer (166). [6] Method according to any of the preceding claims, further comprising: Forming a second oxide layer (264) on a second semiconductor region (200), wherein both the first high-k dielectric layer (166, 266) and the second high-k dielectric layer (174, 274) extend further onto the second oxide layer (266), wherein, during the deposition of the second dipole film (276), the second dipole film is deposited over and in contact with the second high-k dielectric layer (274), wherein the second dipole film (276) overlaps the second semiconductor region (200), wherein, during the second tempering process (80), the second dipole doping agent is driven into the second layer (274) in the second dipole film (276); and Forming a second gate electrode (286) over the second high-k dielectric layer (276), wherein the second gate electrode (286) overlaps the second semiconductor region (200). [7] Method according to any of the preceding claims, wherein the thickness (T2) of the first oxide layer (164) is between 0.5 nm and 1.5 nm. [8] Method according to any of the preceding claims, wherein the first dipole film (168) contains a material selected from lanthanum oxide, lanthanum nitride, aluminium oxide, aluminium nitride or combinations thereof. [9] Device comprising: a first oxide layer (164) on a first semiconductor region (100); a first high-k dielectric layer (166) containing a first high-k dielectric material; a second high-k dielectric layer (174) containing a second high-k dielectric material that differs from the first high-k dielectric material, wherein the second high-k dielectric layer (174) is located above and in contact with the first high-k dielectric layer (166); a first dipol doping agent in the first high-k dielectric layer (174) and the second high-k dielectric layer (176), wherein a first peak concentration of the first dipol doping agent is at a first top surface of the first high-k dielectric layer (166) or a second top surface of the second high-k dielectric layer (174); a gate electrode (186) above the second high-k dielectric layer (174); and a source / drain region (52) on one side of the gate electrode (186), wherein the first peak concentration of the first dipol doper is at the first top surface in a region below the gate electrode (186) and the device further comprises a second dipol doper which is different from the first dipol doper, wherein the second dipol doper has a second peak concentration at the second top surface in a region below the gate electrode (186), wherein one of the first dipol doper and the second dipol doper is a lanthanum-based dipol doper and the other of the first dipol doper and the second dipol doper is an aluminum-based dipol doper, and both the first dipol doper and the second dipol doper have diffused into both the first high-k dielectric layer (166) and the second high-k dielectric layer (174). [10] Device according to claim 9, wherein the first dipol dilution agent contains lanthanum. [11] Device according to claim 9 or 10, wherein the first dipol doping agent contains aluminium. [12] Device according to any one of claims 9 to 11, wherein the second high-k dielectric layer (174) has a higher k-value than the first high-k dielectric layer (166). [13] Device according to any one of claims 9 to 12, wherein one of the first dipol dosing agent and the second dipol dosing agent is lanthanum and the other of the first dipol dosing agent and the second dipol dosing agent is aluminium. [14] Device according to any one of claims 9 to 11, wherein the second high-k dielectric layer (174) has a lower k-value than the first high-k dielectric layer (166). [15] Device comprising: a first transistor, having: a first section of a first high-k dielectric layer (166); a first section of a second high-k dielectric layer (174), wherein the second high-k dielectric layer (174) is above the first high-k dielectric layer (166) and wherein the first high-k dielectric layer (166) and the second high-k dielectric layer have different k values; a first dipol dielectric material having a first peak concentration at an interface between the first section of the first high-k dielectric layer (166) and the first section of the second high-k dielectric layer (174); a second dipol doper having a peak concentration at a top surface of the first section of the second high-k dielectric layer (174), wherein one of the first dipol doper and the second dipol doper is a lanthanum-based dipol doper and the other of the first dipol doper and the second dipol doper is an aluminum-based dipol doper, and both the first dipol doper and the second dipol doper have diffused into both the first high-k dielectric layer (166) and the second high-k dielectric layer (174); and a second transistor, featuring: a second section of the first high-k dielectric layer (266); a second section of the second high-k dielectric layer (274); and the first dipol dielectric material exhibiting a second peak concentration at a top surface of the second section of the first high-k dielectric layer (266). [16] Device according to claim 15, wherein the second high-k dielectric layer (174) has a higher k-value than the first high-k dielectric layer (166). [17] Device according to claim 15, wherein the second high-k dielectric layer (174) has a lower k-value than the first high-k dielectric layer (166). [18] Device according to any one of claims 15 to 17, wherein the first dipol doping agent and the second dipol doping agent are selected from lanthanum and aluminium. [19] Device according to any one of claims 15 to 17, wherein one of the first dipol dosing agent and the second dipol dosing agent is lanthanum and the other of the first dipol dosing agent and the second dipol dosing agent is aluminium. [20] Device according to any one of claims 15 to 19, wherein the first transistor and the second transistor are of the same conductivity type.

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