Optical measuring arrangement with adhesive drift-free measuring target and method for joining a measuring target with a component

Abstract

The invention relates to an optical measuring arrangement (100) for position and / or distance detection of a component (101) with an optical sensor (102) and at least one measuring target (103) which is connected to the component (101), characterized in that the at least one measuring target (103) is connected to the component (101) without the use of an adhesive. The invention further relates to a projection exposure system, an illumination system, a lithography system, an inspection system, a coordinate measuring machine and a method for joining a component with a measuring target.

Description

The invention relates to an optical measuring arrangement for position and / or distance measurement of a component, having an optical sensor and at least one measurement target which is connected to the component. The invention additionally relates to an illumination system for a lithography system, a projection exposure system, a lithography system, an inspection system, a coordinate measuring machine and a method for joining a component and a measurement target.Projection exposure apparatuses are used to produce very fine structures, in particular on semiconductor components or other microstructured components. The functional principle of the systems mentioned is based here on the production of very fine structures down to the nanometer range by means of an imaging of structures on a mask, a reticle, which is generally reduced in size, on an element to be structured provided with photosensitive material, a wafer. The minimum dimensions of the structures produced depend directly on the wavelength of the light used. This is shaped for optimum illumination of the reticle in an illumination optical unit. Recently, more light sources with an emission wavelength in the range of a few nanometers, for example between 1 nm and 120 nm, in particular in the range of 13.5 nm, are used. The described wavelength range is also referred to as the EUV range.In addition to systems operating in the EUV range, the microstructured components are also produced using the DUV systems established on the market having a wavelength between 100 nm and 400 nm, in particular of 193 nm. With the requirement to be able to produce smaller and smaller structures, the requirements for the optical correction in the systems have also increased further. With each new generation of projection exposure apparatuses in the EUV range or DUV range, the throughput is increased in order to increase the economic efficiency.During the operation of microlithographically projection exposure apparatuses, in which usually the mask and wafer are moved relative to one another in a scanning process, the positions of the optical elements, in particular mirrors, which are partially movable in all six degrees of freedom, with respect to one another have to be set with high accuracy and this position / alignment has to be maintained in order to avoid or at least to reduce aberrations and associated adverse effects on the imaging result or else displacements of the image.Various approaches are known in the prior art for measuring the position of the individual mirrors and also of the wafer or of the wafer stage and of the reticle or of the reticle stage. In this case, in addition to interferometric measuring arrangements or measuring arrangements based on encoders, frequency-based position and / or distance measurement using an optical resonator is also known.Usually, at least one, usually several, measurement targets are bonded to the component to be measured. This can lead to adhesive drift.It is therefore the object of the present invention to provide a measuring arrangement, an illumination system, a projection exposure system, a lithography system, an inspection system and a coordinate measuring machine, which permits the most accurate possible position and / or distance detection of a component.The object relating to the measuring arrangement is achieved by a measuring arrangement according to the features of claim 1. The object relating to the method is achieved by a method having the features of claim 11. The object relating to the lighting system is achieved by a lighting system having the features of claim 12. The object relating to the projection exposure apparatus is achieved by a projection exposure apparatus having the features of claim 13. The object relating to the lithography apparatus is achieved with a lithography apparatus having the features of claim 14. The object relating to the inspection system is achieved by an inspection system having the features of claim 15. The object relating to the coordinate measuring machine is achieved by a coordinate measuring machine having the features of claim 16. Advantageous embodiments with expedient refinements are specified in the dependent claims.The optical measuring arrangement is distinguished in particular in that the at least one measuring target is connected to the component without adhesive. The connection between the component and the measurement target is therefore in particular adhesive-free and particularly preferably interlayer-free.The measurement target and the component can preferably be connected to one another by means of explosion. Alternatively, the measurement target and the component are bonded to one another, in particular by means of direct bonding (for example by means of plasma-assisted, hydrophilic direct bonding), anodic bonding or fusion bonding. Furthermore, it is alternatively also possible to enable an adhesive drift-free connection between the component and the measurement target. Alternatively, it is also possible for the measurement target and the component to be connected to one another by means of soldering or by means of reactive bonding.Particularly preferably, the adhesive-free connection is effected by means of laser welding, that is to say the measurement target is connected to the component by means of laser welding. By the measurement target being joined indirectly or directly to the component by means of laser welding, an adhesive-induced drift of the measurement target can be ruled out and a higher measurement accuracy can be achieved.The measurement target may have any shape. The surface of the measurement target can have a rectangular, square, round, ellipsoid, polygon or any other shape. It is advantageous here if the measurement target is formed as a mirror. The measurement target is preferably formed from a material having a low coefficient of thermal expansion (CTE). The component and the measurement target are preferably formed from the same material.Furthermore, it is preferred if the optical sensor is formed as an interferometer. The interferometer can be formed as a heterodyne interferometer or a homodyne interferometer. The sensor comprises a polarising or non-polarising beam splitter and at least one reference mirror. Furthermore, it is also advantageous if the component, i.e. the optical element, has a coefficient of thermal expansion close to zero.Alternatively, it is advantageous if the optical sensor comprises an optical resonator for forming a standing light wave, wherein one of the resonator mirrors is formed as the measurement target, and the optical resonator is configured for frequency-based distance and / or position detection. The optical resonator can preferably also have at least one folding mirror which is configured in the resonator beam path to reflect the light beam directed from the measurement target onto the folding mirror back onto the measurement target. The resonator mirror can thus be formed in particular as a cavity comprising three or more mirrors.Alternatively, it is advantageous if the measurement target is formed as a pattern or as a grid. The pattern or grid may also be formed of a material / glass having a low coefficient of thermal expansion. The pattern or grid preferably has at least two subareas, wherein the pattern or grid of one subareas differs from the pattern or grid of the other subareas. The sub-regions can differ, for example, in terms of their lattice constants, or in terms of their pattern, in the arrangement or width or the course of the pattern or of individual pattern elements. In this context, it is particularly advantageous if the sensor is formed as an optical encoder.It is furthermore advantageous if at least one of the component and the measurement target has an mediator element or a decoupling element which is connected to the other of the measurement target and the component. The decoupling element prevents the transmission of material stresses into the component, which can be caused by the joining by means of laser welding. The decoupling element can be formed in one part or in multiple parts. The decoupling element can be formed from the same material as the component and / or the measurement target, but can also be formed from a different material. The decoupling element is preferably formed as a decoupling ring or as a decoupling pin.The decoupling element is preferably connected to the component and to the measurement target likewise free of adhesive, for example by means of laser welding, explosion or bonding. However, a cohesive joining method is also possibleFurthermore, it is preferred if the surface roughness of the measurement target on the surface facing the component is less than 5 μm, preferably less than 3 μm and very particularly preferably less than 2 μm. The preferred surface roughness can be achieved by means of polishing films.It is furthermore advantageous if the surface roughness of the measurement target on the surface facing the component is less than 100 nm, preferably less than 50 nm and particularly preferably less than 25 nm. The surface roughness can be achieved, for example, by means of grinding processes. If the measurement target is bonded or broken on to the component, it is advantageous if the surface roughness of the measurement target on the surface facing the component is less than 10 nm, preferably less than 5 nm, particularly preferably less than 2 nm.Furthermore, it is preferred if the component is formed as an optical element, in particular as a mirror or as a lens. The component can, however, also be a supporting structure. In addition, the component can also be an actuator or a component of a lithography apparatus.The method according to the invention for joining a measurement target to a component, preferably an optical measurement arrangement, comprises in particular the following steps:providing at least one component and at least one measurement target,bonding the measurement target and the component without adhesiveThe advantages and exemplary embodiments mentioned with respect to the measuring arrangement can also be applied to the method for joining a measurement target to a component of an optical measuring arrangement. The adhesive-free connection between the measurement target and the component leads to a drift-free connection. An adhesive-free, in particular interlayer-free, connection can be effected by means of explosion-bonding, direct bonding, anodic bonding. The connection is very particularly preferably effected by means of laser welding. Alternatively, the component and the measurement target can also be connected to one another by means of soldering or by reactive bonding.In particular, the measurement target and / or the component is heated / welded at at least three points by means of a laser. Preferably, the heating or welding is done by the laser at many different points. The welding points can form a ring or a rectangle or a polygon. The welding points can also be arranged in a meandering manner and form any desired shape or course. In particular, the component or the measurement target can form an outer ring and an inner ring.It is furthermore advantageous if one of the component and the measurement target has an mediator element or a decoupling element, which is connected to the other of the measurement target and the component, preferably without adhesive. The component is then connected to the mediator element or decoupling element of the measurement target without adhesive. The at least one decoupling element or mediator element can also be connected to the component without adhesive. This also applies analogously to the at least one decoupling element or mediator element of the measurement target.In addition, the surfaces of the component and of the measurement target and / or of the decoupling element to be joined can be processed before the joining in such a way that their roughness is in a predefined or predefinable target roughness range. For example, polishing films can be used to achieve a roughness of less than 5 μm, preferably less than 3 μm and particularly preferably less than 2 μm. Alternatively, by grinding, an average roughness (RMS) of less than 100 nm, preferably less than 50 nm and particularly preferably less than 20 nm can be achieved.The illumination system according to the invention for a lithography system has at least one optical measuring arrangement according to the invention. This is configured to detect the position or the distance of a component. The component can be in particular an optical element or a supporting structure. For this purpose, the at least one measuring arrangement is connected or connectable indirectly or directly to the component to be measured. The illumination system of a lithography system comprises in particular a light source which is configured to generate light in an EUV or DUV wavelength range and a plurality of optical elements which are configured to redirect the light generated by the light source and couple it into the projection exposure system. The advantages and embodiments mentioned with respect to the measuring arrangement also apply here to the illumination system comprising at least one measuring arrangement.The projection exposure apparatus according to the invention has at least one optical measuring arrangement according to the invention. The at least one measuring arrangement is configured to record the position or the distance of a component of the projection exposure apparatus. The component can be in particular a movable or immovable optical element, but also any other component of a projection exposure apparatus, for example also support structures or actuators. For this purpose, the at least one measuring arrangement is connected or connectable indirectly or directly to the component to be measured. The advantages and embodiments mentioned with respect to the measuring arrangement also apply here to the projection exposure apparatus comprising at least one measuring arrangement.The lithography apparatus according to the invention has at least one optical measuring arrangement according to the invention. The at least one measuring arrangement is configured to detect a position or a distance of a movable or immovable component. The component can be an optical element or a supporting structure or an actuator or a wafer or a wafer stage or a reticle or a reticle stage. The component can, however, also be any other component of a lithography apparatus, the position or distance of which has to be measured from a reference. For this purpose, the at least one measuring arrangement is connected or connectable indirectly or directly to the component to be measured. In particular, it is preferred if a plurality of measuring arrangements are assigned to each component in order to record the position or a distance along a plurality of degrees of freedom. The advantages and embodiments mentioned with respect to the measuring arrangement also apply here to the lithography apparatus comprising at least one measuring arrangement.The inspection system according to the invention for checking an optical element or a wafer or a wafer stage or a reticle or a reticle stage has at least one measurement arrangement according to the invention. The measuring arrangement is configured to record the position or the distance of a component, i.e. for example an optical element (a mirror or a lens), a wafer, a wafer stage, a reticle or a reticle stage. In this case, an evaluation unit is preferably present which compares the detected positions or distances, in particular of structures of the component, with predetermined distances or positions of the structures or of the components and, in the event of a deviation by a predetermined limit value, initiates the taking of measures. For this purpose, the at least one measuring arrangement is connected or connectable indirectly or directly to the component to be measured. The advantages and embodiments mentioned with respect to the measuring arrangement also apply here to the inspection system comprising at least one measuring arrangement. An example of such an inspection system for reticle or wafer inspection (without the measuring arrangement according to the invention) is known from the publication DE 10 2012 205 181 A1, the entire content of which is incorporated by reference into the present application.The invention can also be used in measuring machines for detecting a position, geometry or shape of a component. The at least one measuring arrangement is preferably connected indirectly or directly to the component. The measuring machine can be used in particular in the context of manufacturing technology or industrial measuring technology in mechanical engineering, for example in the automobile industry or in aviation technology. For this purpose, the at least one measuring arrangement is connected or connectable indirectly or directly to the component to be measured. The advantages and embodiments mentioned with respect to the measuring arrangement also apply here to the measuring machine comprising at least one measuring arrangement.The coordinate measuring machine according to the invention has at least one measuring arrangement according to the invention. Coordinate measuring machines are used for inspecting or measuring components, wherein the component is usually scanned and distances or positions are determined on the basis of the scanning. For this purpose, an optical system and a movable frame structure and / or a highly accurate positioning system are provided, which carries the component or object to be inspected. The measuring arrangement is preferably connected indirectly or directly to this movable component, i.e. frame structure or positioning system. The position or the distance of the movable component can be determined by means of the at least one measuring arrangement, as a result of which the scanning of the object can be controlled. In addition, a measuring arrangement can also be used to record the distance or the position of the component itself and thus to inspect it. The advantages and embodiments mentioned with respect to the measuring arrangement also apply here to the coordinate measuring machine comprising at least one measuring arrangement. An example of such a coordinate measuring machine (without the measuring arrangement according to the invention) is known from the publication DE 10 2019 213 794A1, the entire content of which is incorporated into the present application by reference.Further features, properties and advantages of the present invention are described in more detail below on the basis of variant embodiments with reference to the appended figures. All features described hitherto and in the following are advantageous both individually and in any combination with one another. The embodiments described below are merely examples, which however do not limit the subject matter of the invention. The following are shown: FIG. 1 a shows a schematic illustration of a microlithographically designed projection exposure apparatus for operation in the EUV, FIG. 1 bshows a schematic illustration of a microlithographically designed projection exposure apparatus for operation in the DUV, FIG. 2 shows a schematic illustration of a first exemplary embodiment of an optical measurement arrangement, FIG. 3 shows a schematic illustration of a second exemplary embodiment of an optical measurement arrangement, and FIG. 4 shows a schematic illustration of a plan view of a component and a measurement target.FIG. 1 ashows a schematic representation of an exemplary projection exposure apparatus 600 designed for operation in EUV, in which the present invention can be realized. However, the invention can also be used in other nanopositioning systems.According to FIG. 1 a, an illumination device in a projection exposure apparatus 600 designed for EUV has a field facet mirror 603 and a pupil facet mirror 604. The light of a light source unit, which comprises a plasma light source 601 and a collector mirror 602, is directed onto the field facet mirror 603. In the light path downstream of the pupil facet mirror 604, a first telescope mirror 605 and a second telescope mirror 606 are arranged. Arranged in the light path downstream is a deflection mirror 607 which deflects the radiation impinging on it onto an object field in the object plane of a projection objective comprising six mirrors 651-656. At the location of the object field, a reflective structure-bearing mask 621 is arranged on a mask table 620, which mask is imaged with the aid of the projection objective into an image plane in which a substrate 661 coated with a photosensitive layer (photoresist) is located on a wafer table 660.The invention can also be used in a DUV plant as shown in Fig. 1b. A DUV system is constructed in principle like the EUV system described above from FIG. 1 a, wherein in a DUV system mirrors and lenses can be used as optical elements and the light source of a DUV system emits a useful radiation in a wavelength range from 100 nm to 300 nm.The DUV lithography apparatus 700 illustrated in FIG. 1 bhas a DUV light source 701. An ArF excimer laser, for example, can be provided as the DUV light source 701, which emits radiation 702 in the DUV range at 193 nm, for example. A beam forming and illumination system 703 directs the DUV radiation 702 onto a photomask 704. Photomask 704 is formed as a transmissive optical element and may be situated outside systems 703.Photomask 704 has a structure that is imaged on wafer 706 or the like in a reduced manner by projection system 705. The projection system 705 has a plurality of lenses 707 and / or mirrors 708 for imaging the photomask 704 onto the wafer 706. Individual lenses 707 and / or mirrors 708 of the projection system 705 can be arranged symmetrically with respect to the optical axis 709 of the projection system 705. It should be noted that the number of lenses 707 and mirrors 708 of the DUV lithography apparatus 700 is not limited to the number shown. More or fewer lenses 707 and / or mirrors 708 may also be provided. In particular, the beam shaping and illumination system 703 of the DUV lithography apparatus 700 has a plurality of lenses 707 and / or mirrors 708. Furthermore, the mirrors are generally curved on their front side for beam shaping. An air gap 710 between the last lens 707 and the wafer 706 may be replaced by a liquid medium having a refractive index >1. The liquid medium can be, for example, high-purity water. Such a structure is also referred to as immersion lithography and has an increased photolithographic resolution.FIG. 2 shows a measuring arrangement 100 for position and / or distance measurement of a component 101 (i.e. a component 101 with respect to a reference), preferably in a lithography apparatus. The measuring arrangement 100 comprises an optical sensor 102 and at least one measurement target 103. The component 101 is a mirror in the present case, but could also be any desired component, an actuator, an optical element or a supporting structure. The component 101 has a plurality of measurement targets 103. These are connected to the component 101, wherein the measurement targets 103 are connected to the component 101 without adhesive, preferably by means of laser welding. The measurement targets 103 are preferably mounted on a side facing away from the reflecting surface of the mirror. They can be arranged parallel or approximately parallel to the surface or at any angle smaller than 180° with respect to the mirror surface. The measurement targets 103 are arranged in such a way that a measurement beam 107 of the optical sensor 102 is directed onto the measurement target 103. Each measurement target 103 may be assigned a separate optical sensor 102. Alternatively, however, an optical sensor 102 can also have a plurality of measurement targets 103. The surface of the measurement target 103 may be rectangular, square, round, ellipsoidal, polygonal, or any other shape. Alternatively, the component can also be connected to the measurement target by means of explosion or bonding, in particular by means of direct bonding, anodic bonding or fusion bonding.The measurement target 103 is preferably formed of a material having a low thermal expansion coefficient (CTE).Alternatively, the optical sensor 102 comprises an optical resonator for forming a standing light wave, wherein one of the resonator mirrors is formed as the measurement target 103, and wherein the optical resonator is configured for frequency-based distance and / or position detection. The optical resonator can preferably also have at least one folding mirror which is configured in the resonator beam path to reflect the light beam directed from the measurement target 103 onto the folding mirror back onto the measurement target 103 or to reflect it back into itself. The resonator mirror can thus be formed in particular as a cavity comprising three or more mirrors. At least one of the resonator mirrors can be formed as a planar mirror, a deflecting mirror, a curved mirror or as a retroreflector.Furthermore, the optical sensor 102 can also be formed as an optical encoder. The measurement target 103 is then formed as a pattern, not shown in detail, or as a grid. The pattern or grid may also be formed of a material / glass having a low coefficient of thermal expansion. The pattern or grid can also have at least two subareas, wherein the pattern or grid of the one subareas differs from the pattern or grid of the other subareas. The sub-regions can differ, for example, in terms of their lattice constants, or in terms of their pattern, in the arrangement or width or the course of the pattern or of individual pattern elements.FIG. 3 shows that at least one of the measurement target 103 and component 101 has at least one switching element or one decoupling element 104, which is connected to the other of the measurement target 103 and component 101. The adhesive-free connection then takes place between decoupling element 104 of component 101 and measurement target 103, or analogously between decoupling element 104 of measurement target 103 and component 101. Alternatively, both, i.e. the measurement target 103 and the component 101, can each have at least one decoupling structure 104, so that the adhesive-free connection between the decoupling structures 104 is present. Decoupling element 104 prevents the transmission of material stresses into component 101 that may be caused by the joining by means of laser welding. Decoupling element 104 may be formed in one part or in multiple parts. Decoupling element 104 may be formed from the same material as component 101 and / or measurement target 103, but may also be formed from a different material. Decoupling element 104 is preferably formed as a decoupling ring or as a decoupling pin. Furthermore, decoupling element 104 is connected to component 101 and to measurement target 103 likewise free of adhesive by means of laser welding, explosion or bonding. However, the connection can also be effected by means of a material-bonding joining method.The surface roughness of the measurement target 103 on the surface facing the component 101 is preferably less than 5 μm, preferably less than 3 μm and very particularly preferably less than 2 μm. The preferred surface roughness can be achieved, for example, by means of polishing foils. Alternatively, by means of grinding processes, a preferred surface roughness (the mean roughness RMS) of the measurement target 103 on the surface facing the component 101 of less than 100 nm, preferably less than 50 nm and particularly preferably less than 25 nm can also be used. The surface roughness can be achieved, for example, by means of grinding processes. If the adhesive-free connection is effected by means of bonding or splitting, the surface roughness of the measurement target 103 is less than 10 nm, preferably less than 5 nm and very particularly preferably less than 2 nm.The method for joining at least one measurement target 103 to a component 101 of an optical measurement arrangement 100 comprises, in particular, the steps:providing a component 101 and at least one measurement target 103,bonding the measurement target 103 and the component 101 without adhesive.The adhesive-free connection can be effected by means of explosion or bonding, in particular by means of direct bonding, anodic bonding or fusion bonding. Particularly preferably, the measurement target 103 and the component 101 are connected to one another by means of laser welding. The measurement target 103 and / or the component 101 are heated / welded by means of a laser at at least three welding points 105. Preferably, the heating or welding is done by the laser at many different welding points 105. The welding points 106 can form one or more rings or rectangles or polygons, as shown in FIG. 4. The welding points 105 can also be arranged in a meandering manner and form any desired shape or course.Alternatively or additionally, the method can also comprise a step according to which at least one of component 101 and measurement target 103 has an mediator element or a decoupling element 104, which is connected to the other of measurement target 103 and component. For this purpose, first the decoupling element 104 can be joined to one of the component 101 and the measurement target 103 without adhesive on one side, and then another side of the decoupling element 104 or mediator element is joined to the other of the component 101 and the measurement target without adhesive (e.g. by means of laser welding, explosion, bonding).Before joining, the surfaces of the component 101 and of the measurement target 103 and / or of the decoupling element 104 to be joined can be processed in such a way that their roughness is in a predefined or predefinable target roughness range. For example, polishing films can be used to achieve a roughness of less than 5 μm, preferably less than 3 μm and particularly preferably less than 2 μm. Alternatively, a mean roughness (RMS) of less than 100 nm, preferably less than 50 nm and particularly preferably less than 20 nm can be achieved by grinding. If the adhesive-free connection is effected by means of bonding or splitting, the surface roughness of the measurement target 103 is less than 10 nm, preferably less than 5 nm and very particularly preferably less than 2 nm.The measuring arrangement 100 according to the invention can be used in a projection exposure apparatus 600, 700, in an illumination apparatus, in a lithography apparatus, in an inspection apparatus, in a measuring machine or in a coordinate measuring machine.LIST OF REFERENCE CHARACTERS100 Measuring arrangement 101 component 102 optical sensor 103 measuring target 104 decoupling element 105 welding point 106 reflecting surface of the component 600 projection exposure apparatus 601 plasma light source 602 collector mirror 603 field facet mirror 604 pupil facet mirror 605 first telescope mirror 606 second telescope mirror 607 deflection mirror 620 mask table 621 mask 651 mirror (projection objective) 652 mirror (projection objective) 653 mirror (projection objective) 654 mirror (projection objective) 655 mirror (projection objective) 656 mirror (projection objective) 660 wafer table 661 coated substrate 700 DUV lithography apparatus 701 DUV light source 702 DUV radiation / beam path 703 beam shaping and illumination system (DUV) 704 photomask 705 projection system 706 wafer 707 lens 708 mirror 709 optical axisReferences included in the specificationThis list of documents cited by the applicant has been produced in an automated manner and is only included for the better information of the reader. The list is not part of the German patent application or utility model application. The DPMA does not take any adhesion for any faults or omissions.Patent Literature citedDE 10 2012 205 181 A1

[0029] DE 10 2019,213 794A1

[0031]

Claims

Optical measuring arrangement (100) for position and / or distance detection of a component (101), having an optical sensor (102) and at least one measurement target (103) which is connected to the component (101), characterized in that the at least one measurement target (103) is connected to the component (101) without adhesive.Optical measuring arrangement (100) according to Claim 1, characterized in that the measurement target is connected to the component by means of laser welding.Optical measuring arrangement (100) according to Claim 1 or 2, characterized in that the measurement target (103) is formed as a mirror.Optical measuring arrangement (100) according to one of Claims 1 to 3, characterized in that the optical sensor (102) is formed as an interferometer.Optical measuring arrangement (100) according to one of Claims 1 to 4, characterized in that the optical sensor (102) comprises an optical resonator for forming a standing light wave, in that one of the resonator mirrors is formed as the measurement target (103), and in that the optical resonator is configured for frequency-based distance and / or position detection.Optical measuring arrangement (100) according to Claim 1 or 2, characterized in that the measurement target (103) is formed as a pattern or as a grating.Optical measuring arrangement (100) according to Claim 6, characterized in that the pattern or grating has at least two subareas, wherein the one subareas differ from the other subareas.Optical measuring arrangement (100) according to one of Claims 1 to 7, characterized in that at least one of the component (101) and the measurement target (103) has an mediator element or a decoupling element which is connected to the other of the measurement target (103) and the component.Optical measuring arrangement (100) according to one of Claims 1 to 8, characterized in that the surface roughness of the measurement target (103) on the surface facing the component is less than 5 μm.Optical measuring arrangement (100) according to one of Claims 1 to 9, characterized in that the component (101) is formed as an optical element.Method for joining at least one measurement target (103) to a component (101), comprising the steps: a. providing at least one component (101) and at least one measurement target (103), b. bonding the component (101) to the measurement target (103) without adhesive.Illumination system for a lithography system having at least one optical measurement arrangement (100) according to one of Claims 1 to 10.Projection exposure apparatus (600, 700) for a lithography apparatus having at least one optical measurement arrangement (100) according to one of Claims 1 to 10.Lithography apparatus having at least one optical measuring arrangement (100) according to one of Claims 1 to 10.Inspection system for inspecting a shape, position or geometry of an object, having at least one optical measurement arrangement (100) according to one of Claims 1 to 10.Coordinate measuring machine having at least one optical measuring arrangement (100) according to one of Claims 1 to 10.

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