OPTICAL DEVICE AND MANUFACTURING METHOD

Abstract

Optical devices and fabrication methods therefor are provided, wherein a first photonic device comprises a rotator portion and a splitter portion. The rotator portion includes a plurality of plates, such as a first and a second plate, with different thicknesses. The splitter portion includes a first waveguide and a second waveguide coupled to the first waveguide.

Description

Priority claim and cross-reference

[0001] The present application claims priority over the preliminary US patent application filed on April 22, 2024, under file number 63 / 637.026, which is incorporated by reference into the present application. background

[0002] The transmission and processing of electrical signals is a method for signal transmission and processing. The transmission and processing of optical signals has been increasingly used in recent years in a growing number of application areas, particularly due to the use of optical fibers for signal transmission.

[0003] Transmission and processing of optical signals are typically combined with the transmission and processing of electrical signals to provide sophisticated applications. For example, optical fibers can be used for long-range signal transmission, and electrical signals can be used for short-range signal transmission as well as for processing and control. Therefore, devices integrating long-range optical components and short-range electrical components are manufactured for converting between optical and electrical signals, as well as for processing both. Thus, packages can include both optical (photonic) dies with optical devices and electronic dies with electronic devices. Brief description of the drawings

[0004] Aspects of this disclosure are best understood with reference to the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with industry practice, various features are not shown to scale. Rather, the dimensions of the various elements may have been arbitrarily enlarged or reduced for the sake of clarity. Fig. Figure 1 shows a silicon-on-insulator substrate according to some embodiments. Fig. Figure 2 shows a first step in the manufacture of first optical components according to some embodiments. Fig. Figure 3A shows a second step in the manufacture of the first optical components according to some embodiments. The Fig. Figures 3B to 3F show a first optical device according to some embodiments. Fig. Figure 4 shows a first dielectric layer according to some embodiments. Fig. Figure 5 shows a first metallization layer according to some embodiments. Fig. Figure 6 shows a first semiconductor device according to some embodiments. Fig. Figure 7 shows a support substrate according to some embodiments. Fig. Figure 8 shows rear optical components according to some embodiments. Fig. Figure 9 shows external connections according to some embodiments. The Fig. 10A and Fig. Figure 10B shows an embodiment of the first optical device with conical interfaces, according to some embodiments. Fig. Figure 11 shows an embodiment of the first optical device without conical interfaces, according to some embodiments. Fig. Figure 12 shows an embodiment of the first optical device without a diamond-shaped plate and conical interfaces, according to some embodiments. Fig. Figure 13 shows an embodiment of the first optical device without a diamond-shaped plate and without conical interfaces, according to some embodiments. Detailed description

[0005] The disclosure below provides many different embodiments or examples for implementing various features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the fabrication of a first element above or on top of a second element in the description below may include embodiments in which the first and second elements are fabricated in direct contact, and it may also include embodiments in which additional elements can be fabricated between the first and second elements, such that the first and second elements are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in the various examples in the present disclosure.This repetition serves the purpose of simplicity and clarity and does not in itself prescribe any relationship between the various designs and / or configurations discussed.

[0006] Furthermore, spatially relative terms, such as "located below," "under," "lower," "located above," "upper," and the like, can be used here to simply describe the relationship of one element or structural element to one or more other elements or structural elements depicted in the figures. These spatially relative terms are intended to encompass orientations of the device in use or operation beyond the orientation shown in the figures. The device may be oriented differently (rotated by 90° or in a different orientation), and the spatially relative descriptors used here can be interpreted accordingly.

[0007] The following discusses embodiments for specific configurations in which a multi-depth polarization beam splitter and a rotator are used to suppress the transverse magnetic mode (TM mode) in optical signals. The disclosures presented here may be particularly suitable in silicon photonic platforms, for example, for silicon photonic applications such as a transceiver in a data center, biosensors in medicine, LiDAR (light detection and ranging) in motor vehicles, gyroscopes in the defense or aerospace industries, optical interposers, 3D IC integration, combinations thereof, or the like. However, the embodiments presented here are intended only to illustrate the concepts and not to limit the ideas presented for the specific embodiments described.Rather, the ideas presented can be integrated into many different embodiments, and all of these embodiments can be within the entire scope of protection of the disclosure.

[0008] Now let's move on to... Fig. 1, where an initial structure of an optical interposer 100 (which is in Fig. 9) is illustrated according to some embodiments. In the particular embodiment shown in Fig. As shown in Figure 1, the optical interposer 100 is a photonic integrated circuit (PIC), and at this stage it comprises the following: a first substrate 101, a first insulating layer 103, and a layer of material 105 for a first active layer 201 of first optical components 203 (which are shown in Figure 1). Fig. 1 are not shown individually, but will be shown later with reference to Fig. 2 will be discussed). In one embodiment, at the beginning of the manufacturing process for the optical interposer 100, the first substrate 101, the first insulating layer 103, and the layer of material 105 for the first active layer 201 of the first optical components 203 can collectively form part of a silicon-on-insulator (SOI) substrate. Let us first consider the first substrate 101, which can be a semiconductor material, such as silicon or germanium, a dielectric material, such as glass, or another suitable material that can structurally support higher-lying devices.

[0009] The first insulating layer 103 can be a dielectric layer separating the first substrate 101 from the higher-lying first active layer 201, and in some embodiments it can additionally serve as part of a cladding material that encloses the subsequently fabricated first optical components 203 (which will be discussed later). In one embodiment, the first insulating layer 103 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, a combination thereof, or the like, and it is fabricated by a method such as implantation, e.g., to fabricate a buried oxide layer (BOX layer), or it can alternatively be deposited on the substrate 101 by a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or the like. However, any suitable material and any suitable fabrication method may be used.

[0010] The material 105 for the first active layer 201 is initially (before structuring) a conformal material layer used at the beginning of the fabrication of the first active layer 201 of the first optical components 203. In one embodiment, the material 105 for the first active layer 201 can be a translucent material that can be used as a core material for the desired first optical components 203, such as a semiconductor material like silicon, germanium, silicon germanium, a combination thereof, or the like. In other embodiments, the material 105 for the first active layer 201 can be a dielectric material such as silicon nitride or the like, and in still other embodiments, it can be a III-V material, a lithium niobate material, or a polymer.In embodiments where the material 105 of the first active layer 201 is deposited, the deposition can be carried out using a method such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or the like. In other embodiments where the first insulating layer 103 is produced by an implantation process, the material 105 of the first active layer 201 can initially be part of the first substrate 101 prior to the implantation process for producing the first insulating layer 103. However, any suitable materials and methods for producing the material 105 of the first active layer 201 can be used.

[0011] Fig. Figure 2 shows that after the fabrication of the material 105 for the first active layer 201, the first optical components 203 for the first active layer 201 are fabricated using the material 105 for the first active layer 201. In embodiments, the first optical components 203 of the first active layer 201 can include components such as optical waveguides (e.g., web waveguides, finned waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers, which are constricted waveguides with a width of about 1 nm to about 200 nm, etc.), directional couplers, optical modulators (e.g., silicon photonic Mach-Zehnder switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, opto-electrical converters (e.g., pn junctions), electro-optical converters, lasers, combinations thereof, or the like.However, any suitable first optical component 203 can be used.

[0012] At the beginning of the fabrication of the first active layer 201 of the first optical components 203 from the initial material, the material 105 for the first active layer 201 can be structured into the desired shapes for the first active layer 201 of the first optical components 203. In one embodiment, the material 105 for the first active layer 201 can be structured, for example, using one or more photolithographic masking and etching processes. However, any suitable method for structuring the material 105 for the first active layer 201 can be used. For some of the first optical components 203, such as waveguides or edge couplers, the one or more photolithographic masking and etching processes can constitute the entire fabrication or at least a part thereof used to produce these first optical components 203.

[0013] Fig. Figure 3A shows that for components requiring further fabrication processes (such as silicon photonic Mach-Zehnder switches utilizing resistance heating elements), further processing can be performed either before or after structuring the material for the first active layer 201. For example, implantation processes, further deposition and structuring processes for different materials (e.g., for resistance heating elements, III-V materials for transducers), combinations of all these processes, or the like can be used to support the further fabrication of the various desired first optical components 203. In a particular embodiment, and as shown in particular in Fig. As shown in Figure 3A, in some embodiments an epitaxial deposition of a semiconductor material 301, such as germanium (which is used, for example, for modulating and converting electrical / optical signals), can be performed on a structured part of the material 105 of the first active layer 201. In this embodiment, the semiconductor material 301 can be epitaxially grown to support the fabrication of, for example, a photodiode for an optoelectronic converter. All of these fabrication processes, all suitable first optical components 203 that can be fabricated using these fabrication processes, and all combinations thereof are intended to be entirely within the scope of protection of the embodiments.

[0014] Fig. Figure 3B shows a top-down view of a special first photonic device 303 of the first optical components 203 produced in the first active layer 201, which are used to receive optical signals (in Fig. 3A (not shown individually) with a transverse electric mode (TE mode) and a transverse magnetic mode (TM mode), which can be used to convert the TM mode in a light source to the TE mode and to split the light source. In the Fig. In the special embodiment shown in Figure 3B, the first photonic device 303 has a rotator part 307 and a splitter part 309. In addition to these parts, however, other suitable parts can be used.

[0015] Let us first consider the rotator part 307. The rotator part 307 is used to receive optical signals from an associated receiver or waveguide (which is in Fig. 3B (shown by the arrow to the left of the rotator part 307) and is used to convert the optical signals. Specifically, the optical signals at the point of entry have both TE and TM modes, which is undesirable. The rotator part 307 receives this multimode signal and converts the TM mode to TE modes, so that when the converted optical signal leaves the rotator part 307 and enters the splitter part 309, only the TE mode remains (although some residual TM mode may still be present).

[0016] Fig. Figure 3C shows a sectional view of the rotator part 307 along a line C - C' of Fig. 3B. As in the Fig. As can be seen in the embodiment shown in Figure 3C, the rotator part 307 has a first plate 311, a second plate 313, and a third plate 315. Let us first consider the first plate 311 in the middle. The first plate 311 has the core material (e.g., silicon) and receives the optical signals from the adjacent waveguide. In one embodiment, the first plate 311 can have a first thickness T1 of about 10 nm to about 10 µm, e.g., from about 50 nm to about 500 nm, and a first length L1 (which is shown in Figure 3C). Fig. (as shown in 3B) have dimensions ranging from approximately 1 µm to approximately 5 mm. However, any suitable dimensions can be used.

[0017] Furthermore, the first plate 311 can have a conical shape, as it extends from one side, where the optical signals enter the rotator part 307, to another side, where the optical signals exit the rotator part 307. In a particular embodiment, the first plate 311 can have a first width W1 on the entry side of the optical signals of approximately 10 nm to approximately 10 µm, e.g., several hundred nanometers, and a second width W2 on the exit side of the optical signals, which is larger than the first width and is, for example, approximately 10 nm to approximately 10 µm, e.g., several hundred nanometers.

[0018] Now let us consider the second plate 313. The second plate 313 is arranged around a central portion of the first plate 311 and has a smaller thickness than the first plate 311. In a particular embodiment, the second plate 313 can have a second thickness T2 of approximately 10 nm to approximately 10 µm, e.g., from approximately 50 nm to approximately 500 nm. However, any suitable thickness can be used.

[0019] Furthermore, the second plate 313 can be made from a similar material to the first plate 311. In this embodiment, the second plate 313 can be produced using a different photolithographic masking and etching process than the first plate 311, or alternatively, it can be produced using a combination of masking and etching processes also used to produce the first plate 311. Any suitable combination of processes can be used to produce the second plate 313.

[0020] In another embodiment, the second plate 313 can be manufactured using a different material than that used for the first plate 311. For example, in embodiments where the first plate 311 contains silicon, the second plate 313 can be a material such as silicon (Si), silicon nitride (SiN), polyimide, a combination thereof, or the like. In this embodiment, the first plate 311 can first be manufactured as described above, and then the material for the second plate 313 can be deposited using a process such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition, and then patterned using one or more photolithographic masking and etching processes. However, any suitable materials and processes can be used.

[0021] How best to do this in the top-down view of Fig. As can be seen in 3B, the second plate 313 can have a rhombic shape around the first plate 311, with conical sidewalls on both sides of an interface of the sidewalls (which are in Fig. 3B (where the line C - C' runs) of the second plate 313. In one embodiment, the second plate 313 can extend from the interface of the side walls of the second plate 313 at a first distance D1 of about 1 µm to about 5 mm, varying from about 50 µm to about 200 µm. Furthermore, the second plate 313 can also extend from the interface of the side walls of the second plate 313 at a second distance D2 of about 1 µm to about 5 mm, e.g., less than about 100 µm. Finally, the second plate 313 can have a third width W3 at the interface of the side walls of about 10 nm to about 10 µm, e.g., a few micrometers. However, any suitable dimensions can be used.

[0022] Let us now consider the third plate 315. The third plate 315 is arranged around the first plate 311 and the second plate 313 and generally follows the outer surfaces of the first plate 311 and the second plate 313. In a particular embodiment, the third plate 315 can have a thickness T3 of approximately 10 nm to approximately 10 µm, e.g., from approximately 50 nm to approximately 500 nm. However, any suitable thickness can be used.

[0023] Furthermore, the third plate 315 can be made of a similar material to the first plate 311 and the second plate 313. In this embodiment, the third plate 315 can be produced using a different photolithographic masking and etching process than the first plate 311 and the second plate 313, or alternatively, it can be produced using a combination of masking and etching processes also used to produce the first plate 311 and the second plate 313. Any suitable combination of processes can be used to produce the third plate 315.

[0024] In another embodiment, the third plate 315 can be manufactured using a different material than that used for the first plate 311 and the second plate 313. For example, in embodiments where the first plate 311 contains silicon, the third plate 315 can be a material such as silicon (Si), silicon nitride (SiN), polyimide, a combination thereof, or the like. In this embodiment, the first plate 311 can first be manufactured as described above, and then the material for the third plate 315 can be deposited using a process such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition, and then patterned using one or more photolithographic masking and etching processes. However, any suitable materials and processes can be used.

[0025] How best to do this in the top-down view of Fig. As shown in Figure 3B, the third plate 315 can have a rhombic shape around the second plate 313 (which also has a rhombic shape), with conical sidewalls on both sides of an interface between the sidewalls of the third plate 315. In one embodiment, the third plate 315 can have a fourth width W4, which is larger than the third width W3 and is, for example, about 10 nm to about 10 µm, e.g., a few micrometers. However, any suitable dimensions can be used.

[0026] Let's return to Fig. 3B back. After the converted optical signals leave the rotator part 307, they enter the splitter part 309. In one embodiment, the splitter part 309 comprises a first waveguide 317 and a second waveguide 319, separated by a first gap 321, so that the optical signals can be temporarily coupled between the first waveguide 317 and the second waveguide 319. In a particular embodiment, the first waveguide 317 and the second waveguide 319 can be positioned so close together that they can be temporarily coupled for a second length L2 of approximately 1 µm to approximately 5 mm. However, any suitable dimension can be used.

[0027] Fig. 3D shows a cross-sectional view of the splinter part 309 along a line D - D' of Fig. 3B. As can be seen in this figure, the first waveguide 317 and the second waveguide 319 can each have a fourth thickness T4, which is equal in size to the first thickness T1. In one particular embodiment, the fourth thickness T4 can be approximately 10 nm to approximately 10 µm, e.g., approximately 50 nm to approximately 500 nm. In other embodiments, however, the first waveguide 317 and the second waveguide 319 can have different thicknesses. Any suitable thickness can be used.

[0028] Furthermore, this sectional view shows how the third plate 315 encloses the first waveguide 317 and the second waveguide 319. In one embodiment, the third plate 315 can be thicker than the third plate 315 in the rotator part 307. For example, the third plate 315 in the splitter part 309 can have a fifth thickness T5 of approximately 10 nm to approximately 10 µm, e.g., from approximately 50 nm to approximately 500 nm. However, any suitable thickness can be used.

[0029] In one embodiment, the first waveguide 317, the second waveguide 319, and the third plate 315 can be made of the same material (e.g., silicon) or of different materials. For example, in an embodiment where the first waveguide 317, the second waveguide 319, and the third plate 315 are made of the same material, a combination of photolithographic masking and etching processes can be used. In other embodiments where the first waveguide 317, the second waveguide 319, and the third plate 315 are made of different materials, a combination of photolithographic masking and etching processes together with deposition processes can be used. All suitable processes and materials can be used, and all such combinations are intended to be entirely within the scope of protection of the embodiments.

[0030] Let's return to the top-down view of Fig. 3B back. The first waveguide 317 can have a decreasingly conical shape if it extends between the rotator part 307 and a part with a constant width (e.g., an output to other waveguides). In one embodiment, the first waveguide 317 can taper from the second width W2 to a fifth width W5 from about 10 nm to about 10 µm, e.g., a few hundred nanometers. However, any suitable width can be used.

[0031] The second waveguide 319 has an increasingly conical shape instead of a decreasing conical shape as the distance from the rotator part 307 increases. In one embodiment, the second waveguide 319 can taper from a sixth width W6 of approximately 10 nm to approximately 10 µm, e.g., less than a few hundred nanometers, to a seventh width W7 of approximately 10 nm to approximately 10 µm, e.g., a few hundred nanometers. However, any suitable width can be used.

[0032] Finally, the first waveguide 317 and the second waveguide 319 can be separated by the first gap 321. In one embodiment, the first gap 321 can separate the first waveguide 317 from the second waveguide 319 by a third distance D3 of approximately 10 nm to approximately 1 µm, e.g., from approximately 50 nm to approximately 300 nm. Furthermore, if the first waveguide 317 and the second waveguide 319 are spaced such that the first waveguide 317 is not temporarily coupled to the second waveguide 319, the first waveguide 317 can be separated from the second waveguide 319 by a fourth distance D4 of approximately 1 µm to approximately 1 mm. However, any suitable dimensions can be used.

[0033] During operation, optical signals (e.g., light with a wavelength belonging to the O-band or the C-band, such as wavelengths of 1310 nm or 1550 nm) enter the rotator section 307 in several modes, such as the TM mode and the TE mode, as shown in the box with reference number 323. The rotator section 307 receives the optical signals and converts the TM mode to the TE mode (although some residual TM mode may still be present) with improved conversion efficiency, as shown in the box with reference number 325. After the conversion has been carried out with the rotator part 307, the converted optical signals enter the splitter part 309, having the TE mode, and are coupled into the first waveguide 317 and the second waveguide 319, leaving the splitter part 309 only in the TE mode, as shown in the boxes with reference number 327.After separation, the first waveguide 317 and the second waveguide 319 can route the converted optical signals around the rest of the device.

[0034] The Fig. 3E and Fig. 3F shows the remaining TM intensity for a normalized transmission in dB. In particular, it shows Fig. 3E the remaining TM intensity through the second plate 313, where the x-axis carries the unit of measurement micrometers. Similarly, it shows Fig. 3F the remaining TM intensity through the third plate 315 in the splitter part 309, where the x-axis carries the unit of measurement nanometers.

[0035] Fig. Figure 4 shows that after the fabrication of the individual first optical components 203 of the first active layer 201, a second insulating layer 401 can be deposited such that it covers the first optical components 203 and provides an additional cladding material. In one embodiment, the second insulating layer 401 can be a dielectric layer that separates the individual components of the first active layer 201 from each other and from the structures located above them, and can additionally serve as a further part of the cladding material that encloses the first optical components 203.In one embodiment, the second insulating layer 401 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, another low-k oxide, a combination thereof, or the like, and it is deposited by a deposition process such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or the like. After deposition of the material for the second insulating layer 401, the material can be planarized, for example, by a CMP process (CMP: chemical-mechanical polishing) to planarize a top surface of the second insulating layer 401 (in embodiments where the second insulating layer 401 is intended to completely cover the first optical components 203) or, alternatively, to level the second insulating layer 401 with the top surfaces of the first optical components 203. However, any suitable material and any suitable manufacturing process can be used.

[0036] Fig. Figure 5 shows that after the fabrication of the first optical components 203 of the first active layer 201 and after the fabrication of the second insulating layer 401, first metallization layers 501 are fabricated to connect the first active layer 201 of the first optical components 203 with control circuits, to each other and to subsequently attached devices (which are in Fig. 5 are not shown, but will be shown later in Fig. (as shown in Figure 6 and described with reference to it) to electrically connect the first metallization layers 501. In one embodiment, the first metallization layers 501 are made from alternating layers of dielectric and conductive materials, and they can be produced using suitable processes (such as deposition, single-damascene process, dual-damascene process, etc.). In specific embodiments, several metallization layers can be used to connect the various first optical components 203, the exact number of first metallization layers 501 depending on the design of the optical interposer 100.

[0037] Furthermore, during the fabrication of the first metallization layers 501, one or more second optical components 503 can be fabricated as part of the first metallization layers 501. In some embodiments, the second optical components 503 of the first metallization layers 501 can include components such as another of the first photonic devices 303, couplers (e.g., edge couplers, grating couplers, etc.) for connecting to external signals, optical waveguides (e.g., ribbed waveguides, finned waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., silicon photonic Mach-Zehnder switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, opto-electrical converters (e.g., pn junctions), electro-optical converters, lasers, combinations thereof, or the like.However, any suitable optical components can be used for the one or more second optical components 503.

[0038] In one embodiment, the one or more second optical components 503 can be produced by first depositing a material for these components. In one embodiment, the material for the one or more second optical components 503 can be a dielectric material such as silicon nitride, silicon oxide, a combination thereof, or the like, or a semiconductor material such as silicon, deposited by a deposition process such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or the like. However, any suitable material and any suitable deposition process can be used.

[0039] After the material for the one or more second optical components 503 has been deposited or otherwise produced, it can be structured into the desired shapes for the one or more second optical components 503. In one embodiment, the material for the one or more second optical components 503 can be structured, for example, using one or more photolithographic masking and etching processes. However, any suitable method for structuring the material for the one or more second optical components 503 can be used.

[0040] For some of the one or more second optical components 503, such as waveguides or edge couplers, the structuring process can be entirely, or at least largely, the fabrication process used to produce these components. Furthermore, for components requiring additional fabrication processes (such as silicon photonic Mach-Zehnder switches utilizing resistance heating elements), further processing can be performed either before or after structuring the material for the one or more second optical components 503. For example, implantation processes, further deposition and structuring processes for different materials, combinations of all these processes, or the like can be used to support the further fabrication of the various desired one or more second optical components 503.All of these manufacturing processes, all suitable one or more second optical components 503 that can be manufactured using these manufacturing processes, and all combinations thereof shall be entirely within the scope of protection of the embodiments.

[0041] After one or more second optical components 503 of the first metallization layers 501 have been fabricated, a first bonding layer 505 is produced over the first metallization layers 501. In one embodiment, the first bonding layer 505 can be used for dielectric-dielectric bonding and metal-metal bonding. In some embodiments, the first bonding layer 505 is produced from a first dielectric material 509, such as silicon oxide, silicon nitride, or the like. The first dielectric material 509 can be deposited by a suitable process such as CVD, high-density plasma-ceramic deposition (HDP-CVD), PVD, atomic layer deposition (ALD), or the like. However, any suitable materials and deposition methods can be used.

[0042] After the first dielectric material 509 has been deposited, initial openings are created within it to expose conductive portions of underlying layers in preparation for the fabrication of the first bond pads 507 in the first bond layer 505. Once these openings have been created in the first dielectric material 509, they can be filled with a seed layer and a plate metal to fabricate the first bond pads 507 in the first dielectric material 509. The seed layer can be deposited across the entire surface of the first dielectric material 509, over the exposed conductive portions of the underlying layers, and over the sidewalls of the openings and secondary openings. The seed layer can include a copper layer. Depending on the desired materials, the seed layer can be deposited using processes such as sputtering, evaporation, plasma-enhanced electrochemical vapor deposition (PECVD), or similar methods.The plate metal can be deposited over the seed layer by a plating process, such as electrostatic or electroless plating. The plate metal may contain copper, a copper alloy, or the like. The plate metal may be a filler material. A barrier layer (not shown separately) may be deposited over the entire surface of the top surfaces of the first dielectric material 509 and over the side walls of the openings and the second openings in front of the seed layer. The barrier layer may contain titanium, titanium nitride, tantalum, tantalum nitride, or the like.

[0043] After the initial openings are filled, a planarization process, such as CMP, is performed to remove excess portions of the seed layer and plate metal, creating the first bond pads 507 in the first bond layer 505. In some embodiments, a bond pad via (not shown separately) can also be used to connect the first bond pads 507 to underlying conductive parts and, through these underlying conductive parts, to connect the first bond pads 507 to the first metallization layers 501.

[0044] Furthermore, the first bond layer 505 can also contain one or more third optical components 511 integrated into the first bond layer 505. In this embodiment, prior to the deposition of the first dielectric material 509, the one or more third optical components 511 can be fabricated using similar methods and materials as those for the one or more second optical components 503 (described above), such as by being waveguides and other structures that are at least partially fabricated by a deposition and structuring process. However, any suitable structures, materials, and fabrication methods can be used.

[0045] Fig. Figure 6 shows the bonding of a first semiconductor device 601 to the first bond layer 505 of the optical interposer 100. In some embodiments, the first semiconductor device 601 is an integrated electronic circuit (EIC; e.g., a device without optical devices) which may comprise: a semiconductor substrate 603, a layer of active devices 605, a higher-level interconnect structure 607, a second bond layer 609, and associated third bond pads 611. In one embodiment, the semiconductor substrate 603 may be bonded to the first substrate 101 (e.g.,a semiconductor material such as silicon or silicon germanium); the active devices 605 can be transistors, capacitors, resistors, and the like, fabricated on the semiconductor substrate 603; the interconnect structure 607 can be similar to the first metallization layers 501 (without optical components); the second bond layer 609 can be similar to the first bond layer 505; and the third bond pads 611 can be similar to the first bond pads 507. However, any suitable devices may be used.

[0046] In one embodiment, the first semiconductor device 601 can be configured to function with the optical interposer 100 for a desired functionality. In some embodiments, the first semiconductor device 601 can be an HBM module (HBM: High Bandwidth Memory), an XPU, a logic die, a 3D IC die, a CPU, a GPU, a SoC die, a MEMS die, a combination thereof, or the like. Any suitable device with suitable functionality can be used, and all such devices are intended to be entirely within the scope of protection of the embodiments.

[0047] In one embodiment, the first semiconductor device 601 and the first bond layer 505 can be bonded using a dielectric-dielectric and a metal-metal bonding process. In a particular embodiment where a dielectric-dielectric and a metal-metal bonding process are used, the process can be initiated by activating surfaces of the second bond layer 609 and the first bond layer 505. Activating the top surfaces of the second bond layer 609 and the first bond layer 505 can include, for example, dry treatment, wet treatment, plasma treatment, treatment with an inert gas plasma, treatment with H₂, treatment with N₂, combinations thereof, or the like. In embodiments where wet treatment is used, RCA cleaning, for example, can be employed. In another embodiment, the activation process can include other treatment methods.The activation process supports the bonding of the first bonding layer 505 and the second bonding layer 609.

[0048] After the activation process, the optical interposer 100 and the first semiconductor device 601 can be cleaned, for example, by chemical rinsing. The first semiconductor device 601 is then aligned with the optical interposer 100 and brought into physical contact with it. The optical interposer 100 and the first semiconductor device 601 are then subjected to heat treatment and contact pressure to bond the optical interposer 100 and a laser die 600. For example, the optical interposer 100 and the first semiconductor device 601 can be subjected to a pressure of approximately 200 kPa or less and a temperature of approximately 25 °C to approximately 250 °C to fuse the optical interposer 100 and the first semiconductor device 601.The optical interposer 100 and the first semiconductor device 601 can then be exposed to a temperature of the eutectic point (or above) for the material of the first bond pads 507 and the third bond pads 611, e.g., from about 150 °C to about 650 °C, to melt the metal. In this way, the optical interposer 100 and the first semiconductor device 601 form a dielectric-dielectric bonded and a metal-metal bonded device. In some embodiments, the bonded dies are subsequently hardened, annealed, pressed, or otherwise treated to strengthen or complete the bond.

[0049] While certain processes for initiating and strengthening the bond have been described, these descriptions are intended only to be explanatory and not to restrict the embodiments. Rather, any suitable combination of curing, tempering, and pressing processes can be used. All these processes are intended to be entirely within the scope of protection of the embodiments.

[0050] Fig. Figure 6 further shows that after bonding the first semiconductor device 601, a first gap-filling material 613 is deposited to fill a gap around the first semiconductor device 601 and to provide additional support. In one embodiment, the first gap-filling material 613 can be a material such as silicon oxide, silicon nitride, silicon oxide nitride, a combination thereof, or the like, which is deposited to fill and overfill the gaps around the first semiconductor device 601. However, any suitable material and any suitable deposition method can be used.

[0051] After the first gap-filling material 613 has been deposited, it can be planarized to expose the first semiconductor device 601. In one embodiment, the planarization process can be a CMP process, a grinding process, or the like. However, any suitable planarization process can be used.

[0052] Fig. Figure 7 shows the attachment of a first support substrate 701 to the first semiconductor device 601 and the first gap-filling material 613. In one embodiment, the first support substrate 701 can be a support material, such as silicon, that is transparent to the wavelength of light to be used, and the first support substrate 701 can be, for example, bonded with an adhesive (in Fig. (not shown individually in Figure 7). In other embodiments, however, the first support substrate 701 can be bonded to the first semiconductor device 601 and the first gap-filling material 613, for example, by a bonding process. Any suitable method for attaching the first support substrate 701 can be used.

[0053] Fig. Figure 8 shows the removal of the first substrate 101 and, optionally, the first insulating layer 103, thereby exposing the first active layer 201 of the first optical components 203. In one embodiment, the first substrate 101 and the first insulating layer 103 can be removed by a planarization process, such as a CMP process, a grinding process, one or more etching processes, combinations thereof, or the like. However, any suitable method for removing the first substrate 101 and / or the first insulating layer 103 can be used.

[0054] After the first substrate 101 and the first insulating layer 103 have been removed, a second active layer 801 of fourth optical components 803 can be fabricated on a back side of the first active layer 201. In one embodiment, the second active layer 801 of fourth optical components 803 can be fabricated using similar materials and processes as for the second optical components 503 of the first metallization layers 501 (described above with reference to Fig. 5 have been described) can be manufactured. For example, the second active layer 801 of fourth optical components 803 can be manufactured from alternating layers of a cladding material such as silicon oxide and a core material such as silicon nitride, which are produced by deposition and structuring processes to manufacture optical components such as waveguides and the like.

[0055] Fig. Figure 9 shows the fabrication of first device vias (DVs) 901 and the fabrication of a third bond layer 903 to produce a first optical package 900, which in some embodiments is a compact photonic universal machine (COUPE). In one embodiment, the first DVs 901 extend through the second active layer 801 and the first active layer 201 to allow fast power, data, and ground transmission through the optical interposer 100. In another embodiment, the first DVs 901 can be fabricated by first creating device via openings in the optical interposer 100. The device via openings can be created by applying and developing a suitable photoresist (not shown) and removing exposed portions of the second active layer 801 and the optical interposer 100.

[0056] After the device vias have been created in the optical interposer 100, they can be coated with a layer. The layer can be, for example, an oxide made from tetraethyl orthosilicate (TEOS) or silicon nitride, but alternatively, any suitable dielectric material can be used. The layer can be produced using a PECVD process, but other suitable processes, such as physical vapor deposition or a thermal process, can also be used.

[0057] After the coating has been fabricated along the sidewalls and underside of the device via holes, a barrier layer (also not shown separately) can be fabricated, and the remaining via holes can be filled with a first conductive material. The first conductive material can contain copper, but other suitable materials can also be used, such as aluminum, alloys, doped polysilicon, combinations thereof, and the like. The first conductive material can be deposited by electroplating copper onto a seed layer (not shown), thereby filling and overfilling the device via holes.After the device via holes have been filled, excess coating, excess barrier layer, excess seed layer and excess first conductive material outside the device via holes can be removed using a planarization process such as CMP, but any suitable removal process can be used.

[0058] Optionally, in some embodiments, second metallization layers (in Fig. 9 (not shown separately) are produced in electrical connection with the first TDVs 901. In one embodiment, the second metallization layers can be produced as described above for the first metallization layers 501, such as alternating layers of dielectric and conductive materials using single-damascene processes, dual-damascene processes, or the like. In other embodiments, the second metallization layers can be produced by a plating process to deposit and shape the conductive material and then cover it with a dielectric material. However, any suitable structures and manufacturing processes may be used.

[0059] The third bonding layer 903 is produced to provide electrical connections between the optical interposer 100 and subsequently attached devices. In one embodiment, the third bonding layer 903 can be similar to the first bonding layer 505 and may include, for example, third bonding pads 909 (similar to the first bonding pads 507) and fifth optical components 911 (similar to the third optical components 511). However, any suitable devices may be used.

[0060] Fig. Figure 9 also shows the placement of first outer terminals 913, which can be provided to supply conductive areas for contact between the third bond pads 909 and other external devices. The first outer terminals 913 can be conductive contact bumps (e.g., C4 contact bumps, ball grid arrays, microbumps, etc.) or conductive columns, for which materials such as solder and copper are used. In an embodiment where the first outer terminals 913 are contact bumps, the first outer terminals 913 can contain a material such as tin or other suitable materials such as silver, lead-free tin, or copper. In an embodiment where the first outer terminals 913 are tin solder contact bumps, the first outer terminals 913 can be produced by first creating a layer of tin using conventional methods such as vapor deposition, electroplating, printing, solder transfer, ball placement, etc.Once the layer of tin has been applied to the structure, a melting process can be carried out to bring the material into the desired contact bump shape.

[0061] The use of the first external terminals 913 is indeed one embodiment that can be used to make connections for the first optical package 900, but this embodiment is of course only intended to be illustrative and is not meant to limit the embodiments. Rather, any suitable method for physically, electrically, and, in some cases, optically connecting the first optical package 900 can be used, such as dielectric-dielectric and metal-metal bonding. Any suitable method for bonding the first optical package 900 can be used.

[0062] Fig. Figure 10A shows a further embodiment of the first photonic device 303, which is similar to the first photonic device 303 described above in the Fig. Figures 3A to 3D are shown and have been discussed with reference to them. In this embodiment, the first plate 311, the second plate 313, and the third plate 315, which are located in the rotator part 307, are those described above with reference to Fig. as described in 3B. In this embodiment, however, the third plate 315 does not extend into the splinter part 309. Instead, a fourth plate 1001 is arranged in the splinter part 309 around the first waveguide 317 and the second waveguide 319.

[0063] Fig. 10B shows a sectional view along a line B - B' of Fig. 10A. As can be seen in this figure, although the first waveguide 317 and the second waveguide 319 can be manufactured as described above with reference to the Fig. 3A and Fig. As described in Figure 3B, in one embodiment the fourth plate 1001 is manufactured with a sixth thickness T6, which is either equal to or different from the third thickness T3 and / or the fifth thickness T5 (e.g., greater than them). In a particular embodiment, the sixth thickness T6 can be approximately 0 nm to approximately T4 (0 ≤ T6 ≤ T4). However, any suitable thickness can be used.

[0064] Let's return to Fig. 10A back. Optionally, in this embodiment, an interface between the fourth plate 1001 and the third plate 315 is irregular. For example, in one embodiment, the interface between the fourth plate 1001 and the third plate 315 is not perpendicular to a center line 1003 passing through the first plate 311. Furthermore, the interface can extend parallel to the center line passing through the first plate 311 with a fifth distance D5, where the fifth distance D5 can be approximately 1 nm to approximately 1 mm. However, any suitable distance can be used.

[0065] Fig. Figure 11 shows a further embodiment of the first photonic device 303, which is similar to the embodiment described above with reference to the Fig. 10A and Fig. 10B has been explained. In the Fig. In the embodiment shown in Figure 11, the rotator part 307 includes the first plate 311 and the third plate 315, but not the second plate 313. Furthermore, in this embodiment, the splitter part 309 includes the fourth plate 1001, which has a common interface with the third plate 315.

[0066] In this embodiment, however, the interface between the fourth plate 1001 and the third plate 315 can be similar to that in Fig. The interface between the fourth plate 1001 and the third plate 315 cannot be perpendicular to the centerline of the first waveguide 317, but it can alternatively be perpendicular to this centerline. Any suitable interface orientation can be used.

[0067] Fig. Figure 12 shows a further embodiment similar to the embodiment described above with reference to Fig. As explained in Figure 11, the rotator part 307 contains the first plate 311 and the third plate 315, but not the second plate 313. In this embodiment, however, the interface between the fourth plate 1001 and the third plate 315 is also irregular. For example, in one embodiment, the interface between the fourth plate 1001 and the third plate 315 is not perpendicular to the center line 1003 passing through the first plate 311, and part of the fourth plate 1001 extends into the rotator part 307. Furthermore, the interface can extend parallel to the center line passing through the first plate 311 at a sixth distance D6, where the sixth distance D6 can be approximately 1 nm to approximately 1 mm. However, any suitable distance can be used.

[0068] Fig. Figure 13 shows a further embodiment, which is similar to the embodiment described above with reference to Fig. As explained in Figure 11, the rotator part 307 contains the first plate 311 and the third plate 315, but not the second plate 313. Furthermore, in this embodiment, the interface between the fourth plate 1001 and the third plate 315 is perpendicular to the center line of the first waveguide 317. Any suitable orientation may be used.

[0069] At the in Fig. In the embodiment shown in Figure 13, however, a transition part 1301 is arranged between the rotator part 307 and the splitter part 309. In one embodiment, the first plate 311 tapers in the transition part 1301 as it extends away from the rotator part 307 until it reaches the desired second width W2. The third plate 315, however, does not extend into the transition part 1301 with the first plate 311. Instead, the third plate 315 remains in the rotator part 307, and the fourth plate 1001 extends into the transition part 1301 to connect the first plate 311 in the top-down view. Fig. to enclose 13.

[0070] If the first photonic device 303, which above refers to the Fig.As described in sections 1 to 13, the device can be arranged in a receiver and configured to convert the light transmission mode of a light source received by the receiver. Furthermore, by using the embodiments disclosed herein, the overall efficiency of the light transmission mode conversion can be improved. This allows the total insertion loss of the optical signals to be less than about 1 dB.

[0071] Although numerous embodiments have been described here to illustrate the various ideas presented, the specific embodiments described are not intended to limit the ideas to the specific embodiments discussed. Rather, the presented ideas can be used in various ways, such as in further structures and / or applications. For example, in other embodiments, further layers, such as semiconductor layers, metal layers, oxide layers, etc., can be stacked above the first photonic device 303, with an air gap between the first photonic device 303 and the higher layers. All suitable structures and methods can be used, and all such structures and methods are intended to be entirely within the scope of protection of the embodiments.

[0072] In one embodiment, a method for manufacturing an optical device comprises manufacturing a rotator part by the following steps: manufacturing a first plate of a first thickness; manufacturing a second plate of a second thickness different from the first thickness; and manufacturing a third plate of a third thickness different from both the first and second thicknesses. The method further comprises manufacturing a splinter part adjacent to the rotator part. In one embodiment, manufacturing the splinter part comprises manufacturing a first waveguide; and manufacturing a second waveguide coupled to the first waveguide. In one embodiment, the manufacturing of the third plate involves manufacturing the third plate of the third thickness adjacent to both the first and second waveguides.In one embodiment, the method further comprises manufacturing a fourth plate adjacent to the first and second waveguides, wherein the fourth plate has a fourth thickness that differs from the third thickness. In one embodiment, an interface between the fourth plate and the third plate is offset from a line perpendicular to a centerline of the first plate. In another embodiment, the first thickness is greater than the second thickness, and the second thickness is greater than the third thickness.

[0073] In a further embodiment, a method for manufacturing an optical device comprises: manufacturing an optical signal rotator, wherein the optical signal rotator has a first plate and a second plate of different thicknesses; and manufacturing a splitter adjacent to the optical signal rotator. In one embodiment, the optical signal rotator has a third plate with a thickness different from the thickness of the first plate and the thickness of the second plate. In another embodiment, the method further comprises manufacturing a transition region between the optical signal rotator and the splitter, wherein the transition region includes a portion of the first plate and a portion of a fourth plate, the fourth plate extending into the splitter.In one embodiment, an interface between the fourth plate and the second plate is offset from a line perpendicular to a centerline of the first plate. In another embodiment, the first plate has a thickness of approximately 10 nm to approximately 10 µm. In yet another embodiment, the first plate has a thickness of approximately 50 nm to approximately 500 nm.

[0074] In a further embodiment, an optical device comprises: a rotator part containing a first plate with a first thickness and a second plate with a second thickness different from the first; and a splicer part containing a first waveguide and a second waveguide coupled to the first waveguide. In one embodiment, the rotator part further comprises a third plate with a third thickness different from the first and second thicknesses. In one embodiment, the third plate has a rhombic shape surrounding the first plate. In one embodiment, the first thickness is approximately 10 nm to approximately 10 µm. In another embodiment, the first thickness is approximately 50 nm to approximately 500 nm. In one embodiment, the splicer part comprises a third plate with a third thickness different from the first and second thicknesses.

[0075] Features of various embodiments have been described above so that those skilled in the art can better understand the aspects of the present disclosure. It should be clear to those skilled in the art that they can readily use the present disclosure as a basis for designing or modifying other methods and structures to achieve the same objectives and / or to obtain the same advantages as in the embodiments presented here. Those skilled in the art should also recognize that such equivalent interpretations do not deviate from the fundamental concept and scope of protection of the present disclosure and that they can make various changes, substitutions, and modifications without deviating from the fundamental concept and scope of protection of the present disclosure. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 63 / 637.026

[0001]

Claims

[1] Method for manufacturing an optical device, comprising: Manufacturing a rotator part using the following steps: Producing a first plate with an initial thickness, Producing a second plate with a second thickness that differs from the first thickness, and Producing a third plate with a third thickness that differs from the first thickness and the second thickness; and Manufacturing a splinter part adjacent to the rotator part. [2] Method according to claim 1, wherein the production of the splinter part comprises: Manufacturing a first waveguide; and Manufacturing a second waveguide that is coupled to the first waveguide. [3] Method according to claim 2, wherein in the production of the third plate the third plate is produced with the third thickness adjacent to the first waveguide and the second waveguide. [4] The method of claim 2 or 3, further comprising producing a fourth plate adjacent to the first waveguide and the second waveguide, wherein the fourth plate has a fourth thickness which is different from the third thickness. [5] Method according to claim 4, wherein an interface between the fourth plate and the third plate is offset from a line that is perpendicular to a center line of the first plate. [6] Method according to one of the preceding claims, wherein an interface between the fourth plate and the third plate is perpendicular to a center line of the first plate. [7] Method according to any of the preceding claims, wherein the first thickness is greater than the second thickness and the second thickness is greater than the third thickness. [8] Method for manufacturing an optical device, comprising: Manufacturing an optical signal rotator, wherein the optical signal rotator has a first plate and a second plate of different thicknesses; and Creating a splitter adjacent to the optical signal rotator. [9] Method according to claim 8, wherein the optical signal rotator has a third plate with a thickness that differs from the thickness of the first plate and the thickness of the second plate. [10] Method according to claim 8 or 9, further comprising producing a transition area between the optical signal rotator and the splitter, wherein the transition area includes a part of the first plate and a part of a fourth plate, the fourth plate extending into the splitter. [11] Method according to claim 10, wherein an interface between the fourth plate and the second plate is offset from a line that is perpendicular to a center line of the first plate. [12] Method according to claim 10, wherein an interface between the fourth plate and the second plate is perpendicular to a center line of the first plate. [13] Method according to any one of claims 8 to 12, wherein the first plate has a first thickness of about 10 nm to about 10 µm. [14] Method according to claim 13, wherein the first plate has a first thickness of about 50 nm to about 500 nm. [15] Optical device with: a rotator part which has the following features: a first plate with a first thickness, and a second plate with a second thickness different from the first; and a splintered fragment which has the following features: a first waveguide, and a second waveguide that is coupled to the first waveguide. [16] Optical device according to claim 15, wherein the rotator part further comprises a third plate with a third thickness which is different from the first and second thicknesses. [17] Optical device according to claim 16, wherein the third plate has a diamond shape around the first plate. [18] Optical device according to any one of claims 15 to 17, wherein the first thickness is about 10 nm to about 10 µm. [19] Optical device according to any one of claims 15 to 18, wherein the first thickness is about 50 nm to about 500 nm. [20] Optical device according to any one of claims 15 to 19, wherein the splitter part has a third plate with a third thickness which is different from the first thickness and the second thickness.

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