Atomic trap devices with structured electrode layers

Abstract

A device for controlling trapped atoms comprises a structured electrode layer, wherein the structured electrode layer includes a plurality of electrodes of an atom trap designed to trap atoms in a region above the structured electrode layer. The plurality of electrodes includes a first RF electrode and a second RF electrode extending in a first direction, the first RF electrode and the second RF electrode being arranged on opposite sides of an axis extending in the first direction, and a plurality of DC electrodes arranged between the first RF electrode and the second RF electrode.The plurality of DC electrodes comprises a first DC electrode, which includes a first section and a second section, wherein the first section and the second section are arranged symmetrically to each other with respect to the axis, the axis extending between the first section and the second section, and a second DC electrode, which is arranged symmetrically to the axis, the axis extending through the second DC electrode.

Description

TECHNICAL AREA

[0001] The present disclosure relates to devices for controlling trapped atoms. More precisely, the present disclosure relates to structured electrode layers contained in devices for controlling trapped atoms. BACKGROUND

[0002] The operation of atom trap devices may require the shuttling of atoms between different locations within the device. For example, ion traps may rely on ion shuttling as a crucial component for performing quantum computations. In some cases, a structured electrode layer and associated electrical wiring may be necessary for atom shuttling. The use of conventional structured electrode layers can cause additional heating of motion modes and lead to decoherence. It may be desirable to provide atom trap devices that avoid such undesirable effects.

[0003] Publication EP 4 303 888 A1 relates to a three-dimensional ion trap. Publication DE 10 2020 113 580 A1 relates to an electrode arrangement for ion guidance. Publication US 2024 / 0 404 819 A1 relates to segmented motion control electrodes in ion traps. SUMMARY

[0004] One aspect of the present disclosure relates to a device for controlling trapped atoms. The device comprises a structured electrode layer, wherein the structured electrode layer includes a plurality of electrodes of an atom trap designed to trap atoms in a region above the structured electrode layer. The plurality of electrodes comprises a first RF electrode and a second RF electrode extending in a first direction, the first RF electrode and the second RF electrode being arranged on opposite sides of an axis extending in the first direction, and a plurality of DC electrodes arranged between the first RF electrode and the second RF electrode.The plurality of DC electrodes comprises a first DC electrode, which includes a first section and a second section, wherein the first section and the second section are arranged symmetrically to each other with respect to the axis, the axis extending between the first section and the second section, and a second DC electrode, which is arranged symmetrically to the axis, the axis extending through the second DC electrode.

[0005] Experts will recognize further features and advantages after reading the following detailed description and examining the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure is illustrated by means of examples and without limitation in the figures of the accompanying drawings, in which the same reference numerals refer to similar or identical elements. The elements of the drawings are not necessarily to scale with one another. The features of the various illustrative examples may be combined, provided they are not mutually exclusive. Fig. Figure 1 schematically illustrates a top view of a device 100 for controlling trapped atoms. Fig. 2 contains the Fig. Figures 2A to 2D, which schematically illustrate a top view and three cross-sectional side views of a device 200 for controlling trapped atoms according to the disclosure. Fig. 3 contains the Fig. Figures 3A to 3D, which schematically illustrate a top view and three cross-sectional side views of a device 300 for controlling trapped atoms according to the disclosure. Fig. Figure 4 shows a diagram illustrating shuttling voltages for shutting an atom in a device for controlling trapped atoms according to the revelation. Fig. Figure 5 shows a diagram illustrating secular frequencies of different directions during the shuttling of an atom in a device for controlling trapped atoms according to the revelation. DETAILED DESCRIPTION

[0007] The following description refers to devices for controlling trapped atoms (also called atom trap devices). In particular, the atom trap devices described herein can correspond to ion trap devices, which can be configured to trap ions (charged atoms or molecules) and control the trapped ions. Atom trap devices can be implemented as one or more atom trap chips in the form of small, microfabricated devices designed to trap and manipulate individual atoms in a controlled manner. It should be noted that the following description is not limited to atoms, but can also be applied to ions, molecules, or other quantum particles / systems (e.g., electrons).

[0008] In some examples, the atom trap devices described herein can be used for quantum computing, but are not limited to this application. Trapped atoms (especially trapped ions) are one of the most promising candidates for use as qubits in quantum computers because they can be trapped by electromagnetic fields with relatively long lifetimes, enabling quantum gates to be performed with very high accuracy. In this context, each atom can represent a physical qubit. In some examples, the atom trap devices described herein may also be referred to as trapped-ion quantum computers or ion-trap quantum processors. However, it should be noted that, according to the disclosure, atom trap devices are not limited to the application of quantum computing. The atom trap devices presented herein can also be used for other applications, such as atomic clocks.

[0009] In Fig. Figure 1 shows a top view of an atom trap device 100. More precisely, it illustrates Fig. Figure 1 shows a top view of a structured electrode layer of the atom trap device 100, which contains a plurality of electrodes formed therein. It should be noted that Fig. Figure 1 may only illustrate one section or detail of the atomic trap device 100, while other device components have been omitted for simplicity. An exemplary operation of an atomic trap device is described below.

[0010] In the illustrated example, the structured electrode layer can include a first RF (radio frequency) electrode 2A and a second RF electrode 2B extending in the x-direction, as well as a central DC electrode 4 located between the RF electrodes 2A and 2B and extending parallel to them. Additionally, the structured electrode layer can include a first plurality of first DC electrodes 6A located adjacent to the first RF electrode 2A, and a second plurality of second DC electrodes 6B located adjacent to the second RF electrode 2B. In the illustrated example, the structured electrode layer can correspond to a five-wire geometry. However, it should be understood that the described aspects are not limited to five-wire geometries but can also apply to other types of atom traps and / or electrode geometries.

[0011] In particular, the structured electrode layer and the electrodes formed therein can be arranged in the same single plane. In the illustrated example, the electrodes can extend in the same single xy-plane at the same z-coordinate. Specifically, the atom trap device 100 can correspond to a surface atom trap (or a surface electrode atom trap) in which all electrodes (i.e., the RF electrodes 2A, 2B and the DC electrodes 4, 6A, 6B) can be arranged in the same single plane. However, it is understood that the aspects described are not necessarily limited to surface atom traps. In other examples, atom trap devices can also be based on three-dimensional atom trap geometries (e.g., when two or more trap planes are arranged one above the other).

[0012] The structured electrode layer (or the electrodes formed therein) can be designed to trap and / or transport atoms in a region above the structured electrode layer (or below it if the atom trap device is mounted upside down). That is, the z-coordinate of a trapped and / or transported atom can differ from the z-coordinate of the xy-plane containing the structured electrode layer. In a non-restrictive and purely illustrative example, a trapped atom can be captured at a height of approximately 170 µm above the structured electrode layer. Trapped atoms can be transported along shuttling paths of the device that can extend above the structured electrode layer. In particular, a shuttling path can be arranged in a plane above (and especially parallel to) the structured electrode layer.In the illustrated example, atoms can be transported along the x-direction. In particular, the atoms above the central DC electrode 4 can be trapped and transported.

[0013] Time-dependent electric fields can be used to transport atoms along shuttling paths. Atomic shuttling can be controlled by electrical voltages applied to the electrodes of the structured electrode layer. Atom trap devices such as those described herein can be designed to capture a large number of atoms, which can be individually addressed and moved by appropriate control of the electrical potentials of the electrodes. In the illustrated example, trapped atoms can be moved along shuttling paths by means of alternating and direct current voltages that can be coupled separately to the electrodes of the structured electrode layer. For example, the structured electrode layer can include the RF electrodes 2A, 2B for RF trapping and the DC electrodes 4, 6A, 6B for trapping by a static electric field and / or for moving the atoms within the atom trap device 100.

[0014] The atom trap device 100 can further include at least one unit (not shown) designed to control the time-dependent electrical voltages applied to the electrodes, such as one or more control chips. In this context, the atom trap device 100 can include one or more DC controllers designed to supply a plurality of DC voltages to the plurality of DC electrodes. In the illustrated example, such DC controllers can be electrically coupled to the plurality of DC electrodes 6A, 6B via an electrical redistribution structure 8A, 8B, which can exemplarily comprise a plurality of conductor tracks. In particular, the RF electrodes 2A, 2B, the DC electrodes 4, 6A, 6B, and the electrical redistribution structure 8A, 8B can be arranged in a common plane, i.e., in a single layer.In this case, the atom trap device 100 can also be referred to as a single-layer atom trap device.

[0015] With reference to Fig. Figure 2 shows different views of an atom trap device 200 according to the revelation. More precisely, it illustrates Fig. Two different views of a structured electrode layer of the atom trap device 200, containing electrodes formed therein. Fig. Figure 2A illustrates a top view of the structured electrode layer, while the Fig. Figures 2B to 2D illustrate cross-sectional side views of the structured electrode layer along the section planes B-B', CC', and DD'. It should be noted that Fig. Figure 2 may only illustrate one section or detail of the Atomic Trap Device 200, while other components of the device have been omitted for simplicity. The Atomic Trap Device 200 from Fig. 2 may contain one or more aspects of other atomic traps described herein.

[0016] The atom trap device 200 can include a structured electrode layer 10, wherein the structured electrode layer 10 can contain a plurality of electrodes of an atom trap designed to trap atoms in a region above the structured electrode layer 10. The structured electrode layer 10 and the electrodes formed therein can contain or consist of a metal, a coated metal, or a metal alloy, such as at least one of aluminum, copper, gold, or alloys thereof. In the illustrated example, the electrodes can consist of a single metal layer. In other examples, at least one of the electrodes can be formed by a stack of conductive layers, such as Al / Ti / Pt / Au.For example, the structured electrode layer 10 can be arranged on the top side of a (particularly dielectric) substrate (not illustrated) which may contain or consist of at least one of silicon, silicon carbide, quartz glass, sapphire, glass, aluminium nitride, diamond or the like.

[0017] The array of electrodes can include a first RF electrode 12A and a second RF electrode 12B extending in the x-direction, with the first RF electrode 12A and the second RF electrode 12B being located on opposite sides of an x-direction-extending axis A. The axis A is indicated by two short dashed lines to the left and right of the structured electrode layer 10, but is not shown in its entirety to avoid obscuring the detailed design of the structured electrode layer 10. In the example shown, each of the RF electrodes 12A, 12B can have a rectangular shape. However, in other examples, the shape of the RF electrodes 12A, 12B can differ. In one example, the boundaries of the RF electrodes 12A, 12B need not be perfectly straight, as shown in Fig. 2 shown, but can be at least partially curved, twisted, or similar. In another example, the width of the RF electrode 12A, 12B, measured in the y-direction, need not be constant, as shown in Fig. The size of the RF electrodes shown in Figure 2 can increase and / or decrease along the x-direction. Furthermore, in the illustrated example, the RF electrodes 12A and 12B can be the same size. However, in other examples, the size of the first RF electrode 12A can differ from the size of the second RF electrode 12B. For example, the widths of the RF electrodes 12A and 12B, measured in the y-direction, can differ. In the case shown, the RF electrodes 12A and 12B can be arranged symmetrically with respect to axis A, i.e., axis A can also be called the axis of symmetry. In other examples, however, the RF electrodes 12A and 12B need not be symmetrical with respect to axis A.

[0018] The structured electrode layer 10 can furthermore contain a plurality of DC electrodes arranged between the first RF electrode 12A and the second RF electrode 12B. In the illustrated example, each electrode arranged between the first RF electrode 12A and the second RF electrode 12B can be a DC electrode. That is, no further RF electrodes need to be arranged between the RF electrodes 12A and 12B. Moreover, in the example shown, the plurality of DC electrodes can substantially fill the entire area between the RF electrodes 12A and 12B. It should be noted that the individual electrodes of the structured electrode layer 10 can be electrically insulated from one another. While such electrical insulation is not apparent from the top view in Fig. Although 2A is not necessarily apparent, electrical insulation between the individual electrodes can be seen from the cross-sectional side views in the Fig. Recognizable from 2B to 2D.

[0019] The plurality of DC electrodes can include a first DC electrode 14 (see also DC1) with a first section 14A and a second section 14B. In the illustrated example, both the first section 14A and the second section 14B can extend from the far left to the far right edge of the illustrated detail of the structured electrode layer 10. The first section 14A and the second section 14B can be arranged symmetrically with respect to axis A, with axis A extending between sections 14A and 14B. The first section 14A can contain a plurality of first segments 18A arranged along the x-direction. Similarly, the second section 14B can contain a plurality of second segments 18B arranged along the x-direction.In the example shown, the first segments 18A and the second segments 18B can be arranged symmetrically to each other with respect to axis A. In particular, axis A can extend between the first segments 18A and the second segments 18B. In the case shown, the first segments 18A and the second segments 18B can have the shape of a rectangle. In other examples, however, the shape of segments 18A and 18B can be different and, for example, have the shape of a trapezoid or a parallelogram, as in the example described later in [reference]. Fig. 3 is evident.

[0020] The first section 14A of the first DC electrode can further include first connecting lines 20A that electrically connect the first segments 18A of the first section 14A. Similarly, the second section 14B of the first DC electrode can include second connecting lines 20B that electrically connect the second segments 18B. The first connecting lines 20A and the second connecting lines 20B can be arranged symmetrically with respect to axis A. Since the multiple first segments 18A can be connected via the first connecting lines 20A, the first section 14A of the first DC electrode can be designed as an integral element. Similarly, the second segments 18B and the second connecting lines 20B connecting them can form an integral second section 14B.

[0021] In the illustrated detailed view of the atom trap device 200, the first section 14A and the second section 14B of the first DC electrode 14 can be separated from each other. Specifically, sections 14A and 14B can be separated at the points where the atom trap device 200 is designed to capture and / or transport atoms. However, it should be noted that the first section 14A and the second section 14B can be connected at one or more points, for example, at the periphery of the atom trap device 200. Furthermore, the first section 14A and the second section 14B can be connected to the same voltage source (not illustrated). This means that the same DC voltage can be applied to the first section 14A and the second section 14B (see DC1).

[0022] The structured electrode layer 10 can further include a second DC electrode 16 (see also DC2) arranged symmetrically with respect to axis A, with axis A extending through the second DC electrode 16. The second DC electrode 16 can include a plurality of segments 22 arranged along the x-direction, with axis A extending through the segments 22. In the illustrated example, the segments 22 can be arranged symmetrically with respect to axis A. In particular, the segments 22 of the second DC electrode 16 can be at least partially (and in particular completely) surrounded by the first section 14A of the first DC electrode 14 and the second section 14B of the first DC electrode 14. In the illustrated example, the segments 22 of the second DC electrode 16 can have the shape of a rectangle. However, in other examples, the shape of the segments 22 can differ, as in the example described later in Fig. Figure 3 shows where segments 22 can have the shape of a hexagon.

[0023] The second DC electrode 16 can further include connecting lines 24 that electrically connect the segments 22 of the second DC electrode 16. In the illustrated example, the connecting lines 24 of the second DC electrode 16 can extend along axis A and at least partially coincide with axis A. As can be seen from the cross-sectional side view of Fig. As can be seen in Figure 2D, the connecting leads 24 of the second DC electrode 16 can be arranged between the first section 14A of the first DC electrode 14 and the second section 14B of the first DC electrode 14 (or more precisely, between the first segments 18A and the second segments 18B). Since the multiple segments 22 can be connected via the connecting leads 24, the second DC electrode 16 can be designed as an integral element. The second DC electrode 16 can be connected to a voltage source (not shown) that provides a DC voltage (see DC2).

[0024] The plurality of DC electrodes arranged between the RF electrodes 12A and 12B can further include a third DC electrode 26 with a first section 26A and a second section 26B. In the illustrated example, the first section 26A and the second section 26B can be arranged symmetrically with respect to axis A, with axis A extending between the first section 26A and the second section 26B. The first section 26A of the third DC electrode 26 can contain a number of first segments 28A arranged along the x-direction. Similarly, the second section 26B of the third DC electrode 26 can contain a plurality of second segments 28B arranged along the x-direction. In the illustrated example, the first segments 28A and the second segments 28B of the third DC electrode 26 can be arranged symmetrically with respect to axis A.In particular, axis A can extend between the first segments 28A and the second segments 28B of the third DC electrode 26.

[0025] The first section 26A of the third DC electrode 26 can further include first connecting lines 30A that electrically connect the first segments 28A. Similarly, the second section 26B of the third DC electrode 26 can include second connecting lines 30B that electrically connect the second segments 28B. The first connecting lines 30A and the second connecting lines 30B can be arranged symmetrically with respect to axis A. In the example shown, the connecting lines 30A, 30B can include sections that are offset from axis A. Since the multiple first segments 28A can be connected via the first connecting lines 30A, the first section 26A can be formed as an integral element. Similarly, the second segments 28B and the first connecting lines 30B connecting them can form an integral second section 26B of the third DC electrode 26.The first section 26A and the second section 26B can be connected to the same voltage source (not shown). The same voltage can be applied to sections 26A and 26B (see DC3).

[0026] The array of DC electrodes arranged between the RF electrodes 12A, 12B can further include a fourth DC electrode 32 (see DC4) and a fifth DC electrode 34 (see DC5) extending in the x-direction. Specifically, the two DC electrodes 32, 34 can be configured for stray field compensation in the y-direction and / or for tilting the trap potential (yz) to facilitate efficient laser cooling at any point along the axial direction. The fourth DC electrode 32 and the fifth DC electrode 34 can be located on opposite sides of axis A. In the case shown, each of the DC electrodes 32, 34 can correspond to a linear DC rail. For example, the DC electrodes 32, 34 can have a rectangular shape, as shown. In other examples, the shape of the DC electrodes 32, 34 can be chosen differently.In one example, the boundaries of the RF electrodes 32, 34 do not necessarily have to be perfectly straight, as in . Fig. 2 shown, but can be at least partially curved, twisted, or similar. In another example, the width of the DC electrodes 32, 34, measured in the y-direction, need not necessarily be constant, as shown in Fig. The dimensions shown in Figure 2 are fixed, but can increase and / or decrease along the x-direction. Furthermore, in the illustrated example, the DC electrodes 32 and 34 can be the same size. However, in other examples, the size of the fourth RF electrode 32 can differ from the size of the fifth RF electrode 34. For example, the widths of the DC electrodes 32 and 34, measured in the y-direction, can differ. In the illustrated example, the DC electrodes 32 and 34 can be arranged symmetrically with respect to the x-axis A. However, in other examples, the DC electrodes 32 and 34 need not be symmetrical with respect to the x-axis A.

[0027] The RF electrodes 12A, 12B and the number of DC electrodes arranged between them can be configured similarly to the example of Fig. 1. They are arranged in a common plane. In the case shown, the RF electrodes and DC electrodes can be arranged in a single xy-plane with the same z-coordinate. The atom trap device 200 can thus correspond to or contain a surface atom trap (or a surface electrode atom trap). Similar to the example of Fig. 1. The atom trap device 200 can be configured to capture and / or transport atoms along shuttling paths extending across the structured electrode layer 10. In the illustrated example, one or more atoms can be captured and / or transported along the x-direction, with the atoms being substantially arranged along axis A. In particular, the atom trap device 200 can be configured to capture a linear chain of atoms arranged along the x-direction across the structured electrode layer 10.

[0028] The atom trap device 200 can include one or more DC voltage sources (not illustrated) designed to provide DC voltages to the plurality of DC electrodes. In the illustrated example, the provided DC voltages are designated DC1 through DC5. In particular, the first section 18A and the second section 18B of the first DC electrode 18 can be supplied with the same DC voltage DC1. For this purpose, the first section 18A and the second section 18B can be connected to an identical DC voltage source. Similarly, the first section 26A and the second section 26B of the third DC electrode 26 can be supplied with the same DC voltage DC3, which can be provided by an identical DC voltage source. It should be noted that different electrodes of the structured electrode layer 10 can be electrically isolated from one another, as can be seen from the side views of the Fig. 2B to 2D is visible.

[0029] The Atom Trap Device 200 can include one or more DC controllers (not illustrated) designed to supply the plurality of DC voltages DC1 to DC5 to the plurality of DC electrodes. The DC controller(s) may be connected via an electrical redistribution structure, as shown in the example of Fig. 2, which is not shown for the sake of simplicity, can be electrically coupled to the plurality of DC electrodes. For example, the electrical redistribution structure can be arranged at the periphery of the structured electrode layer 10. In particular, the RF electrodes 12A, 12B, the plurality of DC electrodes arranged between them, and the electrical redistribution structure can be in a common plane (i.e., in a single layer) similar to the example in Fig. 1. It should be noted that the atom trap device 200 may additionally include one or more RF controllers (not illustrated) designed to provide a variety of RF voltages to the RF electrodes 12A, 12B.

[0030] With reference to Fig. Figure 3 shows different views of an atom trap device 300 according to the disclosure. More precisely, it illustrates Fig. Three different views of a structured electrode layer of the Atom Trap Device 300. Fig. Figure 3A illustrates a top view of the structured electrode layer, while the Fig. Figures 3B to 3D illustrate cross-sectional side views of the structured electrode layer along the section planes B-B', CC' and DD'. The atom trap device 300 from Fig. 3 may include one or more aspects of other atomic trap devices described herein.

[0031] Similar to the example of Fig. 2. The atom trap device 300 (or more precisely its structured electrode layer 10) can contain two RF electrodes 12A, 12B and a plurality of intermediately arranged DC electrodes 14, 16, 26, 32 and 34. The in Fig. The three reference symbols used may refer to similar or identical elements of the atom trap device 200. Fig. 2. In the example shown, the first segments 18A and the second segments 18B of the first DC electrode 14 can have the shape of a parallelogram (instead of the shape of a rectangle as in the atom trap device 200 in Fig. 2) Additionally, the segments 22 of the second DC electrode 16 can have the shape of a hexagon (instead of the shape of a rectangle as in Fig. 2) Furthermore, the first segments 28A and the second segments 28B of the third DC electrode 26 can have the shape of a trapezoid (instead of the shape of a rectangle as in Fig. 2).

[0032] Atomic trap devices according to the disclosure can outperform conventional atomic trap devices with respect to the following exemplary aspects.

[0033] Simulations of long-range transport (e.g., in a range of about 100 µm to about 10 mm) for certain single-layer atom traps show that not all eigenvectors of the secular modes (associated with the Hessian matrix of the effective potential) remain constant in their direction during the transport process. That is, different frequency components can couple with each other, so that coherence is lost and additional heating can be induced during shuttling. In particular, coupling (or heat transfer) can occur between radial and axial modes. In contrast, simulations of long-range shuttling for atom trap devices with a structured electrode layer design, as described herein, showed that the eigenvectors of the secular motions can remain essentially constant during shuttling, so that all frequency components can remain essentially decoupled (see, e.g., described later). Fig. 5) In this way, unwanted additional heating and decoherence due to mode mixing can be avoided. Atom trap devices according to the disclosure can thus provide reliable solutions for long-range shuttleling of atoms.

[0034] The atom trap devices described herein can correspond to single-layer atom traps, which can be manufactured more quickly and easily compared to multi-layer atom trap devices, where electrical redistribution is not in the same plane or layer as the trap electrodes, but in one or more layers located beneath the trap electrodes. The fabrication of multi-layer atom trap devices containing multiple conductive layers may require significantly better control of the processes used and can therefore only be reliably carried out in large-scale production facilities. In multi-layer atom traps, free space can be retained beneath the DC electrodes, with the saved space being used for the further routing of electrical signals and / or light via waveguides.The atom trap devices described herein can be laser-fabricated, metal-coated atom traps, limited to single-layer designs. Similarly, the atom trap devices described herein can be YBCO (yttrium barium copper oxide) atom traps, also limited to single-layer designs. Due to its superconducting properties, YBCO is a promising material for atom traps. YBCO can only be grown on certain substrates.

[0035] With reference to the Fig. 4 and Fig. 5. Diagrams will now be shown and described that illustrate simulation results for the shuttling of an atom trapped in an atom trap device according to the disclosure, such as one of the atom trap devices from the Fig. 2 and Fig. 3. The simulation results show, for example, that only low voltages may be required for the axial confinement and shuttling of atoms. In the illustrated example, the atom can move in the x-direction with a constant y-coordinate and a constant z-coordinate. The constant y-coordinate of the atom can have an exemplary and non-limiting value of approximately zero when moving along the x-axis. The constant z-coordinate of the atom can have an exemplary and non-limiting value of approximately 170 µm, meaning the atom can move at a height of approximately 170 µm above the structured electrode layer of the atom trap device.

[0036] Fig. Figure 4 shows a diagram illustrating the shuttling voltages (in units of V) that can be applied to the DC electrodes of the atom trap device to transport the atom axially. For example, the shuttling voltages can be provided to the DC electrodes by one or more DC controllers, as described above. Specifically, the shuttling voltages are plotted against the axial position of the atom (in units of 100 µm). Returning to the examples in the Fig. 2 and Fig. Figure 3 shows a dashed line indicating a first shuttling voltage DC1 that can be applied to the first DC electrode 14, a dotted line indicating a second shuttling voltage DC2 that can be applied to the second DC electrode 16, and a solid line indicating a third shuttling voltage DC3 that can be applied to the third DC electrode 26. Additionally, a dotted line indicates a fourth shuttling voltage DC4 and a fifth shuttling voltage DC5 that can be applied to the fourth DC electrode 32 and the fifth DC electrode 34, respectively. In the illustrated example, the fourth shuttling voltage DC4 and the fifth shuttling voltage DC5 can be the same. As shown in Figure 3, the fourth shuttling voltage DC4 and the fifth shuttling voltage DC5 can be the same. Fig. As can be seen in Figure 4, all shuttling voltages can have values ​​of less than approximately 6 V.

[0037] Fig. Figure 4 shows the voltages required to confine the atom (or ion) at axial positions (i.e., x-positions) between approximately -200 µm and approximately 200 µm. For example, at position x = 0 µm, the following voltages are required: DC1 = 3 V, DC2 = -1.1 V, DC3 = 1.5 V, DC4 = DC5 = 0.3 V. Or, at position x = 100 µm, the following voltages are required: DC1 = 0 V, DC2 = -1 V, DC3 = 6 V, DC4 = DC5 = 0.5 V. The voltages shown in the example in Fig. The four voltages shown can be configured to confine the atom at different axial positions (i.e., x-positions) within a harmonic potential at a secular frequency of approximately 1 MHz. It should be noted that while the voltages would appear different at different axial frequencies, the overall trend would remain the same. Furthermore, the shuttling sequence is generally not fixed by specifying the frequencies. Depending on the number of degrees of freedom, there can be many solutions.

[0038] The atom can be shifted using the shown shuttling voltages as follows. For example, the atom can be confined at x = 0 µm and is to be shifted to x = 200 µm. At x = 0 µm, we have the following voltages: DC1 = 3 V, DC2 = -1.1 V, DC3 = 1.5 V. Returning to the example in Fig. At 2A, the atom would be located above DC2, since DC1 and DC3 are positive and DC2 is negative, and therefore the minimum of the harmonic potential along the x-direction would lie above DC2. If the atom is to be moved to x = 200 µm, the voltages must be adjusted as shown in Fig. Figure 4 shows the change to the right. If a linear x(t) profile is assumed, the x-axis can be interchanged with a time axis. Finally, when the voltages DC1 = -1 V, DC2 = 2.2 V, and DC3 = 2.2 V are reached, the position at x = 200 µm is reached, where DC1 is now negative and DC2 and DC3 are positive, meaning that the atom is located above DC1, as this is the new minimum of the axial boundary.

[0039] The example in Fig. Figure 4 shows the shuttling stresses as a function of the x-position, i.e., in the form of a function V(x). In some examples, shuttling parameters such as velocities and accelerations can be determined by a time-dependent function x(t), so that the shuttling stresses can then be evaluated as V(x(t)).

[0040] Fig. Figure 5 shows a diagram that represents the secular frequencies (in units of 10 6 Hz) of the x, y, and z directions during axial shuttling of the atom is illustrated. In particular, it is shown how the secular frequencies for different axial positions change using the shuttling stresses from Fig.4. Behavior. The eigenvectors, which determine both the directions of the secular motions and the corresponding secular frequencies, can remain essentially constant during shuttling. All frequency components can thus remain essentially decoupled, so that unwanted heating and decoherence due to mode mixing can be avoided.

[0041] The examples described herein provide devices for controlling trapped atoms. Example 1 is a device for controlling trapped atoms, the device comprising: a structured electrode layer, the structured electrode layer comprising a plurality of electrodes of an atom trap designed to trap atoms in a region above the structured electrode layer, the plurality of electrodes comprising: a first RF electrode and a second RF electrode extending in a first direction, the first RF electrode and the second RF electrode being arranged on opposite sides of an axis extending in the first direction, and a plurality of DC electrodes arranged between the first RF electrode and the second RF electrode, the plurality of DC electrodes comprising: a first DC electrode comprising a first section and a second section, the first section and the second section being arranged symmetrically to each other with respect to the axis.wherein the axis extends between the first section and the second section, and a second DC electrode arranged symmetrically to the axis, the axis extending through the second DC electrode. Example 2 is a device from Example 1, wherein the second section of the first DC electrode is separated from the first section of the first DC electrode. Example 3 is a device from Example 1 or 2, wherein the first section of the first DC electrode and the second section of the first DC electrode are connected to the same voltage source. Example 4 is a device from one of the preceding examples, wherein: the first section of the first DC electrode comprises a plurality of first segments arranged along the first direction, the second section of the first DC electrode comprises a plurality of second segments arranged along the first direction, the first segments and the second segments are arranged symmetrically to each other with respect to the axis, and the axis extends between the first segments and the second segments. Example 5 is a device from Example 4, wherein the first segments and the second segments of the first DC electrode have the shape of a rectangle, a trapezoid or a parallelogram. Example 6 is a device from Example 4 or 5, wherein: the first section of the first DC electrode comprises first connecting leads that electrically connect the first segments, the second section of the first DC electrode comprises second connecting leads that electrically connect the second segments, and the first connecting leads and the second connecting leads are arranged symmetrically to each other with respect to the axis. Example 7 is a device from one of the preceding examples, wherein: the second DC electrode comprises a plurality of segments arranged along the first direction and the axis extends through the segments of the second DC electrode. Example 8 is a device from Example 7, wherein the segments of the second DC electrode have the shape of a rectangle or a hexagon. Example 9 is a device from Example 4 and Example 7, wherein: the second DC electrode comprises connecting leads that electrically connect the segments of the second DC electrode, the connecting leads of the second DC electrode extend along the axis, and the connecting leads of the second DC electrode are arranged between the first section of the first DC electrode and the second section of the first DC electrode. Example 10 is a device from one of Examples 7 to 9, wherein the segments of the second DC electrode are surrounded by the first section of the first DC electrode and by the second section of the first DC electrode. Example 11 is a device from one of the preceding examples, wherein the plurality of DC electrodes further comprises: a third DC electrode comprising a first section and a second section, wherein the first section and the second section are arranged symmetrically to each other with respect to the axis, the axis extending between the first section and the second section. Example 12 is a device from Example 11, wherein: the first section of the third DC electrode comprises a plurality of first segments arranged along the first direction, the second section of the third DC electrode comprises a plurality of second segments arranged along the first direction, the first segments and the second segments of the third DC electrode are arranged symmetrically to each other with respect to the axis, and the axis extends between the first segments and the second segments of the third DC electrode. Example 13 is a device from one of the preceding examples, wherein the plurality of DC electrodes further comprises: a fourth DC electrode extending in the first direction. Example 14 is a device from Example 13, wherein the plurality of DC electrodes further comprises: a fifth DC electrode extending in the first direction, wherein the fourth DC electrode and the fifth DC electrode are arranged on opposite sides of the axis. Example 15 is a device from Example 14, wherein the fourth DC electrode and the fifth DC electrode have a linear shape. Example 16 is a device from one of the preceding examples, wherein a shuttling path of the atom trap extends along the first direction above the structured electrode layer. Example 17 is a device from one of the preceding examples, wherein the first RF electrode, the second RF electrode and the number of DC electrodes are arranged in a common plane. Example 18 is a device from any of the preceding examples, further comprising: a DC controller designed to provide a plurality of DC voltages to the plurality of DC electrodes, the DC controller being electrically coupled to the plurality of DC electrodes via an electrical redistribution structure. Example 19 is an RF device from Example 18, wherein the first RF electrode, the second RF electrode, the plurality of DC electrodes and the electrical redistribution structure are arranged in a common plane. Example 20 is a device from one of the preceding examples, wherein each electrode arranged between the first RF electrode and the second RF electrode is a DC electrode. Example 21 is a device from one of the preceding examples, wherein the atom trap is designed to capture a linear chain of atoms above the structured electrode layer along the first direction.

[0042] The terms “above”, “above”, “below”, or similar terms relating to a part, element, or layer of material formed or arranged “above”, “above”, or “below” a surface may be used herein to mean that the part, element, or layer of material (e.g., placed, formed, arranged, deposited, etc.) is arranged (e.g., placed, formed, arranged, deposited, etc.) “directly above”, “directly above”, or “directly below”, e.g., in direct contact with the implied surface.However, the terms “above”, “above”, “below”, or similar, used in reference to a part, element, or layer of material formed or arranged “above”, “above”, or “below” a surface, may also be used here to express that the part, element, or layer of material is arranged “indirectly above”, “indirectly above”, or “indirectly below” the implied surface, with one or more additional parts, elements, or layers arranged between the implied surface and the part, element, or layer of material.

[0043] Although specific examples have been illustrated and described herein, it will be clear to those skilled in the art that a multitude of alternative and / or equivalent embodiments can replace the specific examples shown and described without altering the scope of the present invention. This application is intended to cover all adaptations or variations of the specific examples discussed herein. Therefore, this invention is intended to be limited only by the claims and their equivalents.

[0044] It should be noted that the methods and devices described in this document, including their preferred embodiments, can be used alone or in combination with the other methods and devices disclosed in this document. Furthermore, the features described in connection with a device are also applicable to a corresponding method, and vice versa. In addition, all aspects of the methods and devices described in this document can be combined as desired. In particular, the features of the claims can be combined with one another as desired.

[0045] It should be noted that the description and drawings merely illustrate the principles of the proposed methods and systems. Those skilled in the art will be able to implement various arrangements which, although not explicitly described or shown herein, embody the principles of the invention and are contained in its spirit and scope. Furthermore, all examples and embodiments described in this document are expressly provided for illustrative purposes only, to facilitate the reader's understanding of the principles of the proposed methods and systems. Moreover, all statements contained herein that provide principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include their equivalents.

Images