Light-emitting device

Abstract

[Task] To provide a small-format light-emitting device with excellent reliability. [Solution] A light-emitting device comprising a light-emitting diode chip having a top surface and a bottom surface, a first metal section and a second metal section positioned below the light-emitting diode chip, and a resin section positioned between the first metal section and the second metal section, wherein the light-emitting diode chip has a rectangular semiconductor section when viewed from below, a first connection pad provided in a region enclosing the center point of the bottom surface of the semiconductor section, and at least two second connection pads provided in at least two corner sections of the four corner sections of the bottom surface of the semiconductor section.exhibits and the first metal section and the second metal section are exposed on the underside of a light-emitting device from the resin section and the first connection pad is connected to the first metal section over its entire underside and the at least two second connection pads are connected to the second metal section and the area of ​​the first connection pad is greater than the sum of the areas of the at least two second connection pads.

Description

[Technical field]

[0001] The disclosure relates to a light-emitting device. [State of the art]

[0002] Light-emitting devices that use a solid-state light-emitting element, such as a light-emitting diode (LED) or the like, achieve a high luminous efficacy and are small in size compared to incandescent lamps that enclose a filament or the like in a glass bulb, which is why they are used in many devices that include backlighting for a display or the like, as well as a light source for illumination.

[0003] Patent literature 1 discloses a light-emitting device which has a positive electrode and a negative electrode on the same surface, wherein a light-emitting element which is connected by flip-chip assembly over a pair of conductors consisting of a positive and a negative conductor is sealed with sealing resin. [Patent literature on the state of the art][Patent literature]

[0004] [Patent Literature 1] JP 2019-021919 A [Non-patent literature]

[0005] [Non-patent literature 1] CY Tang, MY Tsai, CC Lin and LB Chang, "Thermal measurements and analysis of flip-chip LED packages with and without underfills" 2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference, 20-22. Oct. 2010,DOI: 10. 1109 / IMPACT.2010.5699638 [Brief description of the invention][Problem to be solved by the invention]

[0006] Increasing the power output of a light-emitting device increases the heating effect of the solid component, such as an LED. It is known that metals, semiconductors, insulating resins, and similar materials used to construct light-emitting devices exhibit different coefficients of thermal expansion as their temperature rises. Non-patented literature 1 demonstrates that a hotspot develops in the center of a light-emitting diode chip assembled using a flip-chip design. This hotspot not only leads to degradation due to the temperature increase of the LED chip, but also creates stress due to differences in the linear expansion coefficients of the light-emitting device's components. This stress increases the risk of failure in areas of the LED chip with lower mechanical strength.

[0007] The embodiment according to the present disclosure provides a small-format light-emitting device with high reliability during high-performance operation. [Means to solve the problem]

[0008] A light-emitting device comprising a light-emitting diode chip having a top and a bottom, a first metal section and a second metal section positioned below the light-emitting diode chip, and a resin section positioned between the first metal section and the second metal section, wherein the light-emitting diode chip has a rectangular semiconductor section when viewed from below, a first connection pad provided in an area encompassing the center of the bottom of the semiconductor section, and at least two second connection pads provided in at least two corner sections from the four corner sections of the bottom of the semiconductor section.exhibits and the first metal section and the second metal section are exposed from the resin section on a light-emitting device underside of the light-emitting device, and the first connection pad is connected to the first metal section on the entirety of this underside, the at least two second connection pads are connected to the second metal section, and the area of ​​the first connection pad is greater than the area of ​​the at least two second connection pads. [Effect of the invention]

[0009] The heat dissipation capacity of the light-emitting solid is improved, and the temperature rise of the light-emitting device during high-performance operation is reduced. This minimizes deterioration of the light-emitting solid, further reduces internal stress within the light-emitting device, lowers the probability of failures due to mechanical deformation or breakage, and improves the reliability of a small-format light-emitting device. [Brief description of the characters] Fig. Figure 1 is a simplified top view of a light-emitting device according to a first embodiment. Fig. Figure 2 is a simplified side view of a light-emitting device according to the first embodiment. Fig. Figure 3 is a simplified bottom view of a light-emitting device according to the first embodiment. Fig. 4 is a simplified view of the intersection surface IV-IV from Fig. 1. Fig. 5 is a simplified view of the intersection surface VV from Fig. 1. Fig. Figure 6 is a simplified top view of a metal element of a light-emitting device according to the first embodiment. Fig. Figure 7 is a simplified side view of a metal element of a light-emitting device according to the first embodiment. Fig. Figure 8 is a simplified bottom view of a metal element of a light-emitting device according to the first embodiment. Fig. Figure 9 is a simplified side view of a second metal element of a light-emitting device according to the first embodiment. Fig. Figure 10 is a simplified top view of a light-emitting diode chip 10 of a light-emitting device according to the first embodiment. Fig. Figure 11 is an enlarged simplified view of the in Fig. 5 circled areas. Fig. Figure 12 is a simplified bottom view of a light-emitting diode chip 10 of a light-emitting device according to the first embodiment. Fig. Figure 13 is a simplified top view of a conductor frame used in the manufacture of a light-emitting device according to the first embodiment. Fig. Figure 14 is a simplified elevation of a state in which, during the manufacture of a light-emitting device according to the first embodiment, a conductor frame on which a light-emitting diode chip and a light-transmitting element are mounted is located between an upper shape and a lower shape. Fig. Figure 15 is a simplified top view of a plate-shaped article taken from the upper and lower forms during the manufacture of a light-emitting device according to the first embodiment. Fig. Figure 16 is a simplified elevation drawing of a light-emitting device, which is a modified example of the first embodiment. Fig. Figure 17 is a simplified elevation drawing of a light-emitting device, which is a further modified example of the first embodiment. Fig. Figure 18 is a simplified top view of a metal element of a light-emitting device according to a second embodiment. Fig. Figure 19 is a simplified top view of only one metal element and one resin section of a light-emitting device according to the second embodiment. Fig. Figure 20 is a simplified elevation view comprising a diagonal of a light-emitting device top surface of a light-emitting device according to the second embodiment. Fig. Figure 21 is a simplified bottom view of a light-emitting device according to the second embodiment. Fig. 22 is an enlarged simplified view of the in Fig. 21 on the right side of the circled area. Fig. 23 is an enlarged simplified view of the in Fig. 21 on the left side of the circled area. Fig. Figure 24 is a simplified bottom view of a light-emitting diode chip of a light-emitting device according to the second embodiment. Fig. Figure 25 is a simplified elevation view comprising a diagonal of a light-emitting device top surface of a light-emitting device according to a third embodiment. Fig. Figure 26 is a simplified top view of a metal element of a light-emitting device according to the third embodiment. Fig. Figure 27 is a simplified view of the underside of a light-emitting device according to the third embodiment. Fig. 28 is a simplified view of the intersection surface XXVIII-XXVIII from Fig. 27. Fig. 29 is an enlarged simplified view of the in Fig. 25 circled area. Fig. Figure 30 is a simplified bottom view of a light-emitting diode chip of a light-emitting device according to the third embodiment. [Embodiments of the invention]

[0010] The following is a description of embodiments of the invention. The light-emitting device disclosed below serves to illustrate the technical concept of the present invention and, unless specifically stated otherwise, does not limit the present invention to the following embodiments. Furthermore, content explained for one embodiment may also be applied to other embodiments and variations. Additionally, the sizes, positional relationships, and the like of the elements shown in the figures may be exaggerated to make the explanation clearer. "Viewed from above" means viewed from the top side of the light-emitting device, and "viewed from below" means viewed from the bottom side of the light-emitting device.The outer surface is the side surface on the outside and the side surface visible from the outside, and the inner surface is the side surface on the inside and the surface of the side of a cavity or the like. <Erste Ausführungsform>

[0011] A light-emitting device 100 according to a first embodiment is described below. As in Fig. As shown in Figures 1 to 3, the light-emitting device 100 has a lower surface 110, an upper surface 120 opposite the lower surface 110, and outer surfaces 130 (130a, 130b, 130c, 130d) positioned between the upper surface 120 and the lower surface 110 and connected to both. If the light-emitting device 100 is cuboid, it has four outer surfaces 130. The top surface of the light-emitting device 120 is square, and the four outer surfaces of the light-emitting device 130a, 130b, 130c, 130d have the same shape.

[0012] The light-emitting device 100 comprises a light-emitting diode chip 10 having a top and a bottom, a metal element 20 positioned below the light-emitting diode chip 10, and an insulating resin section 30. The metal element 20 comprises a first metal section 21, a second metal section 22, and a third metal section 23. The resin section 30 is positioned between the first metal section 21 and the second metal section 22, and further between the first metal section 21 and the third metal section 23. In the Fig. 4 and Fig. In the example shown in Figure 5, the LED chip 10 is connected to the metal element 20, which comprises the first metal section 21, the second metal section 22, and the third metal section 23, via an electrically conductive connecting section 40 using a flip-chip assembly. As shown in Figure 5, the top side of the LED chip 10 is... Fig. 1, Fig. 4 and Fig. As shown in Figure 5, a wavelength conversion element 60 is arranged over a translucent adhesive element 50. A top surface of the wavelength conversion element 60 serves as a light-emitting surface 140 and is contained in the top surface 120 of the light-emitting device 100. As shown in Fig. Figure 3 shows that, viewed from below, the first metal section 21 is arranged on both sides, i.e., to the right of the first metal section 21 is the second metal section 22 and to the left is the third metal section 23. As shown in Fig. 3 and Fig. As shown in Figure 5, the resin section 30 is also continuously arranged on the side of the light-emitting diode chip 10, the translucent adhesive element 50 and the wavelength conversion element 60, and it reaches the four outer surfaces of the light-emitting device 130a, 130b, 130c, 130d.

[0013] The LED chip 10 spans in the Fig. In the example shown in Figure 5, the resin section 30 is arranged between the first metal section 21 and the second metal section 22 and is connected to the first metal section 21 and the second metal section 22 and spans the resin section 30, which is arranged between the first metal section 21 and the third metal section 23 and is connected to the first metal section 21 and the third metal section 23.

[0014] Within the area of ​​the upper side of the first metal section 21, as shown in Fig. 4 and Fig. Figure 6 shows a groove 29 formed on the outside of a section of the outer edge of the connection surface to the LED chip 10, touching this section. The resin section 30 is arranged at the groove 29.

[0015] Directly below the LED chip 10 is, as in Fig. 5, Fig. 6 and Fig. Figure 8 shows that the area of ​​the lowest surface of the first metal section 21 on the side opposite the uppermost surface of the first metal section 21 is larger than the area of ​​the uppermost surface of the first metal section 21. Here, a straight line leading directly downwards from any point within the uppermost surface of the first metal section 21 only traverses the interior of the first metal section 21 and reaches the lowest surface of the first metal section 21.

[0016] The metal element 20 comprises several projecting sections that reach the outer surface 130 of the light-emitting device. Specifically, as shown in Fig. 6 to Fig. Figure 8 shows a free space 28 in which the resin section 30 is arranged. To the right of the first metal section 21 is the second metal section 22, and to the left of the first metal section 21 is the third metal section 23. A projecting section 21p contacts the first metal section 21 and reaches the outer surface 130a of the light-emitting device, and another projecting section 21p contacts the first metal section 21 and reaches the outer surface 130c of the light-emitting device. A projecting section 22p contacts the second metal section 22 and reaches the outer surface 130a of the light-emitting device, three projecting sections 22p contact the second metal section 22 and reach the outer surface 130b of the light-emitting device, and a projecting section 22p contacts the second metal section 22 and reaches the outer surface 130c of the light-emitting device.One projecting section 23p touches the third metal section 23 and reaches the outer surface 130a of the light-emitting device, three projecting sections 23p touch the third metal section 23 and reach the outer surface 130d of the light-emitting device, and one projecting section 23p touches the third metal section 23 and reaches the outer surface 130c of the light-emitting device.

[0017] An end surface of the projecting sections 21p, 22p, 23p of the metal element 20 lies, as in Fig. Figure 2 shows that the outer surface 130a of the light-emitting device is free from the resin section 30. The outer surface 130c of the light-emitting device is symmetrical to the outer surface 130a of the light-emitting device with a surface that runs parallel to the outer surface 130a of the light-emitting device and encompasses the center point of the light-emitting device 100 as a mirror plane. The end surface of the projection section 22p of the metal element 20 is free from the resin section 30 on the outer surface 130b of the light-emitting device, and the end surface of the projection section 23p of the metal element 20 is free from the resin section 30 on the outer surface 130d of the light-emitting device.

[0018] The lowermost surface of the first metal section 21, the lowermost surface of the second metal section 22, and the lowermost surface of the third metal section 23 of the metal element 20 are exposed on the underside 110 of the light-emitting device from the resin section 30. Within the area of ​​the lower surface of the second metal section 22 and the third metal section 23, an area abutting the free space 28 is covered by the resin section 30. The surface of the upper surface of the first metal section 21 is covered by the resin section 30, with the exception of the connection surface to the LED chip 10.An image of the connection surface of the first metal section 21 to the LED chip 10, projected perpendicularly onto a plane encompassing the underside 110 of the light-emitting device, is completely contained within the exposed surface of the first metal section 21 on the underside 110 of the light-emitting device. Projected perpendicular projection lines of the connection surface of the first metal section 21 to the LED chip 10 traverse only the interior of the first metal section 21. The exposed surfaces of the first metal section 21, the exposed surfaces of the second metal section 22, and the exposed surfaces of the third metal section 23 on the underside 110 of the light-emitting device are external terminals of the light-emitting device 100 and are provided for mechanical, thermal, and electrical connection to an externally supplied printed circuit board.A solder conductor provided on a circuit board, corresponding to the second metal section 22, is electrically connected to a solder conductor corresponding to the third metal section 23, and during operation of the light-emitting device 100, the second metal section 22 has the same electrical potential as the third metal section 23, and a potential difference corresponding to the operating voltage arises between these two and the first metal section 21.

[0019] Viewed from below, the LED chip 10 is a convex polygon and is, for example, rectangular, with a top and a bottom. In the Fig. In the example shown, the LED chip 10 is square when viewed from above. The LED chip 10 has a semiconductor section and a connection pad. The semiconductor section, viewed from below, has the shape of a square, which is a type of rectangle, and comprises a single-crystal plate 11, a second electrically conductive semiconductor layer 12, a multiple quantum well layer 13, a first electrically conductive semiconductor layer 14, a first electrode layer 15a, a first insulating layer 17a, a second electrode layer 16, and a second insulating layer 17b. The connection pad comprises a first connection pad 18 and at least two second connection pads 19 and consists of the following: Fig. The example shown in Figure 12 consists of a first connection pad 18 and four second connection pads 19. The top side of the light-emitting diode chip 10 is the translucent single-crystal plate 11, and a hole, described below, which reaches the second electrically conductive semiconductor layer 12, and a hole, which reaches the first electrode layer 15a, are visible through it.

[0020] The LED chip 10 contains, as in Fig. Figure 11 shows, in a top-to-bottom direction, the single-crystal plate 11, the second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, and the first electrically conductive semiconductor layer 14 arranged sequentially. The first electrode layer 15a is provided on a surface on the underside of the first electrically conductive semiconductor layer 14 and electrically connected to the first electrically conductive semiconductor layer 14. A hole is provided that penetrates the multiple quantum well layer 13, the first electrically conductive semiconductor layer 14, and the first electrode layer 15a and reaches the second electrically conductive semiconductor layer 12, and the first insulating layer 17a is arranged, covering the inner surface of this hole as well as a surface of the underside of the first electrode layer 15a.The second electrode layer 16 is provided inside a hole that reaches a surface of the lower side of the first insulating layer 17a and the second electrically conductive semiconductor layer 12, and is electrically connected to the second electrically conductive semiconductor layer 12. In the area where a first connection pad 18 is provided, a hole is provided that penetrates the first insulating layer 17a and the second electrode layer 16 and reaches the first electrode layer 15a, and the second insulating layer 17b is arranged, covering the inner surface of this hole and a surface of the lower side of the second electrode layer 16. In the area where a second connection pad 19 is provided, an opening section is provided on the second insulating layer 17b.A first connection pad 18 penetrates the first insulating layer 17a and the second electrode layer 6 and is electrically connected to the first electrode layer 15a via a hole reaching the first electrode layer 15a. At least two second connection pads 19 are electrically connected to the second electrode layer 16 via an opening provided on the second insulating layer 17b. Directly above the first connection pad 18 and the four second connection pads 19 are the second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, the first electrically conductive semiconductor layer 14, the first electrode layer 15a, the second electrode layer 16, the first insulating layer 17a, and the second insulating layer 17b.

[0021] At least two second connection pads 19 are included in the Fig. In the example shown, four connection pads are provided individually in four corner sections 10c of a square semiconductor section. One first connection pad 18 is provided in a region containing the center of the lower surface of the semiconductor section of the LED chip 10. This first connection pad 18 covers the second insulating layer 17b outside the four corner sections 10c of the square in which the four second connection pads 19 are positioned and is provided separately from the four second connection pads 19, with the outer surfaces of the first connection pad 18 forming part of the respective outer surfaces of the LED chip 10.Viewed from below, the outer edge of each second connection pad 19 does not reach the midpoints of the sides of the square shape of the LED chip 10, whereas the outer edge of the first connection pad 18 reaches the vicinity of the midpoints of the sides of the square shape of the LED chip 10. The second insulating layer 17b, exposed between the first connection pad 18 and the second connection pads 19, is continuously positioned between adjacent sides of a square. Viewed from below, the area of ​​the first connection pad 18 is larger than the sum of the areas of the four second connection pads 19.

[0022] The first terminal pad 18 is connected over its entire lower surface to the uppermost surface of the first metal section 21 via an electrically conductive connection section 40. Here, "entire lower surface" means that there is no intentionally provided gap between the first terminal pad 18 and the uppermost surface of the first metal section 21. The lower surface of two of the four second terminal pads 19 is connected via the electrically conductive connection section 40 to the uppermost surface of the second metal section 22, and the lower surface of the other two second terminal pads 19 is connected via the electrically conductive connection section 40 to the uppermost surface of the third metal section 23.Between the first connection pad 18 and the individual second connection pads 19, the resin section 30, which is arranged between the first metal section 21 and the second metal section 22 as well as between the first metal section 21 and the third metal section 23, is arranged continuously.

[0023] During high-power operation, the LED chip 10 heats up and its temperature rises when current is applied. Viewed from above, the temperature distribution of the LED chip 10 is such that the temperature of a region near the center of a convex polygon outside the corner sections 10c is higher than the temperature of the corner sections 10c. Here, "center of a convex polygon" means that, assuming a convex polygon is a flat plate with uniform density and thickness, the centroid coincides with the center of the incircle and circumcircle in the case of an equilateral polygon, and coincides with the intersection of the diagonals in the case of a rectangle.On the surface of the lower side of a region outside the corner sections 10c, where at least two second connection pads 19 of the LED chip 10 are positioned, and containing the center of the LED chip 10, the first connection pad 18 is provided, consisting of a continuous region with a larger area than the area of ​​the corner sections 10c, separated from the at least two second connection pads 19. Viewed from below, the first connection pad 18 exists continuously between a location where the outer surface of the first connection pad 18 coincides with a portion of the outer surfaces of the LED chip 10 and the center of a convex polygon. The entire lower surface of the first connection pad 18 is connected to the uppermost surface of the first metal section 21.The area of ​​the lowest surface of the first metal section 21 directly beneath the LED chip 10 is larger than the area of ​​the uppermost surface of the first metal section 21. Furthermore, the lowest surface of the first metal section 21, on the side opposite the uppermost surface of the first metal section 21, serves as the external connection for the light-emitting device 100. Thus, starting from the area near the center of the LED chip 10, where the temperature tends to rise, the cross-sectional area of ​​the heat radiation path is increased, heat is conducted outwards over the shortest distance, and heat dissipation is improved. Local temperature increases in the area near the center of the LED chip 10 during high-power operation are reduced, and a more uniform temperature distribution is achieved.As a result, the heat-related deterioration of the LED chip 10 can be slowed down, stress from uneven temperature distribution can be reduced, and the lifespan of the LED chip 10 can be extended.

[0024] During high-performance operation, the temperature of the corner sections 10c is lower than the temperature of the area near the center of the convex polygon outside the corner sections 10c. Since the resin section 30 between the first connection pad 18 and the second connection pads 19 is positioned away from the center of the convex polygon, where the temperature is high, and closer to the corner sections 10c, the stress resulting from differences between the coefficient of linear expansion of the metal element 20 and the coefficient of linear expansion of the resin section 30 is reduced. Furthermore, the risk of failure in sections of the LED chip 10 with low mechanical strength is mitigated.

[0025] Sections of the LED chip 10 with low mechanical strength occur, for example, at edges of the LED chip 10 with differing thicknesses, i.e., near steps. The second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, the first electrically conductive semiconductor layer 14, the first electrode layer 15a, and the second electrode layer 16 of the LED chip 10 cover, with the exception of a hole reaching the second electrically conductive semiconductor layer 12 and a hole reaching the first electrode layer 15a, the entire area of ​​the lower side of the single-crystal plate 11, and the thickness of the semiconductor sections of the LED chip 10 is essentially uniform. Thus, sections of the LED chip 10 with low mechanical strength can be reduced, and the risk of deformation or fracture due to thermal stress is decreased.

[0026] The following describes an example of a manufacturing process for the light-emitting device 100. In this manufacturing process, the LED chip 10 is prepared and a conductor frame 200 is prepared. Here, "prepare" means either purchase or manufacture.

[0027] The light-emitting diode (LED) chip 10 is a diode chip that emits ultraviolet or visible light by applying a forward voltage to its electrodes and has a positive electrode and a negative electrode on the same surface. For example, the LED chip 10 can be fabricated by using a III-V compound semiconductor material, applying conventional wafer processing methods such as photolithography, chemical vapor deposition, sputtering, etching, or the like to a single-crystal wafer after epitaxy by metal-organic vapor deposition or the like, and singulating these wafers by dicing or the like. The single-crystal wafer 11 of the LED chip 10 is, in one example, a sapphire pure crystal wafer.The second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, and the first electrically conductive semiconductor layer 14 comprise AlGaInN compound semiconductors. The first terminal pad 18 and the second terminal pad 19 comprise a gold layer (Au layer) on their outermost surface. In the first embodiment, the first terminal pad 18, which is the positive electrode, and the second terminal pad 19, which is the negative electrode, are formed simultaneously, and the thickness of the first terminal pad 18 and the thickness of the second terminal pad 19 are equal. In another example, the LED chip 10 does not contain a single-crystal plate 11. The LED chip 10 can be manufactured or purchased.

[0028] The conductor frame 200 is used for semiconductor packages and supports and secures semiconductor chips, such as a light-emitting diode chip. It is a metal plate used for connecting to traces on a printed circuit board. For example, it can be manufactured by creating an opening section in which a predetermined shape is repeated. A base plating is then applied to all or part of the outer surface of a copper plate using electrolytic plating or similar processes, and a plating of silver, gold, or similar materials is applied over the base plating. The conductor frame 200 comprises, as shown in Fig. Figure 13 shows several connecting sections 220 and several islands 230 on the inside of an outer frame 210. The several connecting sections 220 and the several islands 230 are separated into several metal elements 20 by a separation described below. The conductor frame 200 can be manufactured or purchased. <die-bonden>

[0029] In several component mounting areas of the conductor frame 200, the LED chip 10 is bonded by die bonding. In other words, the LED chip 10 is connected to the respective component mounting areas of the multiple islands 230 via the electrically conductive connection section 40 using flip-chip assembly. The electrically conductive connection section 40 is, for example, solder in which a gold-tin alloy paste has been melted and hardened. By applying gold-tin alloy paste to the respective component mounting areas of the multiple islands 230 and placing the LED chip 10 onto the coated gold-tin alloy paste using a chip assembly system and reflow soldering, the LED chip 10 is connected to the conductor frame 200 by flip-chip assembly. The dotted line in Fig. Figure 6 shows the outer edge of the area where the LED chip 10 is placed. A section of the outer edge of the area where the LED chip 10 is positioned corresponds to Fig. 6 coincides with the edge of the groove 29 and the edge of the free space 28. The fact that the groove 29 and the free space 28 are formed along the outer edge of the connection surface of the first metal section 21 to the LED chip 10 contributes to the self-aligning effect during reflow soldering. This self-aligning effect makes it easier to achieve precise positioning of the LED chip 10 and reduces the reduction in the cross-sectional area of ​​the heat radiation path caused by positional deviations of the first connection pad 18 and the first metal section 21.Furthermore, the self-aligning effect, if the light-emitting device 100 and an axis-symmetrical lens that focuses or scatters the light emitted by the light-emitting device 100 are provided on an externally supplied circuit board, can also help to reduce positional deviations of the light-emitting diode chip 10 and the optical axis of the lens.

[0030] A wavelength conversion element 60 is mounted on the top surface of the LED chip 10 via a translucent adhesive element 50. The translucent adhesive element 50 can be, for example, a translucent silicone resin, which is heat-cured after the wavelength conversion element 60 is mounted. The wavelength conversion element 60 can be, for example, a plate in which ceridoted yttrium aluminum garnet crystal grains have been sintered.

[0031] After the LED chip 10 has been bonded using die bonding and the translucent adhesive element 50 has been attached, the conductor frame 200 is attached as shown in Fig. Figure 14 shows the structure clamped between an upper form 71 and a lower form 72. It is also possible that a film is clamped between the conductor frame 200 and either the upper form 71 or the lower form 72. Furthermore, a white silicone molding compound, for example, is poured into a space between the upper form 71 and the lower form 72, heat-cured, and the resin section 30 is formed.

[0032] The plate-shaped article, taken from the upper and lower molds, is then cut along in Fig. The separation plan lines 81 shown in Figure 15 are separated, and several light-emitting devices 100 are formed. Several connecting sections 220 of the conductor frame 200 are separated, become several projecting sections 21p, 22p, 23p, and together with several islands 230 form several metal elements 20. One separation surface becomes the outer surface 130 of the light-emitting device 100, and opposing outer surfaces 130 of the light-emitting device have the same shape.

[0033] Since several connecting sections 220 link multiple islands 230 in length and width, the shape of the conductor frame 200 is stable, and defects are less likely to occur during forming and processing, such as an island 230 lifting off and the first metal section 21, the second metal section 22, or the third metal section not being exposed on the underside 110 of the light-emitting device. Because the cross-sectional area of ​​the connecting section 220 is small compared to the island 230, separation is facilitated, and mass production of a small-format light-emitting device 100 is simplified.

[0034] The foregoing materials relating to the light-emitting diode chip 10, the conductor frame 200, the electrically conductive connecting section 40, the translucent adhesive element 50, the wavelength conversion element 60, and the resin section 30 are examples, and other materials may be used appropriately. Fig. In the example shown, the LED chip 10 is square when viewed from above, but since the LED chip is separated from a wafer, it only needs to be a tessellated convex polygon and can also be a triangle encompassing an equilateral triangle or a hexagon encompassing an equilateral hexagon. The electrically conductive connecting section 40 can also consist of solder material such as a gold-tin alloy foil or the like, which has been solidified by cooling after melting, or sintered silver or sintered copper can also be used. Furthermore, without using the electrically conductive connecting section 40, the connection pads of the LED chip 10 can be directly connected to the conductor frame 200 by a technique such as diffusion welding or bonding at room temperature or the like.

[0035] The light-emitting device 100 described above and its manufacturing method are an example of the present disclosure. In a modified example of the light-emitting device 100 according to the first embodiment, after preparation of the conductor frame 200, the conductor frame 200 can be clamped between the upper and lower forms, and the resin section 30 can be formed in the space between the upper and lower forms. Alternatively, the LED chip 10 can be bonded to the plate-shaped formed article by die bonding, and the wavelength conversion element 60 can be attached. An outer surface of the LED chip 10 and a side surface of the wavelength conversion element 60 can be surrounded and separated with an opaque element 31, such as a white epoxy resin, and several light-emitting devices 101 of the type described in the present disclosure can be produced. Fig. 16 is shown, to be formed.

[0036] Furthermore, in a light-emitting device 102, another modified example, as in Fig. Figure 17 shows that an outer surface and a top surface of the light-emitting diode chip 10 are covered with the wavelength conversion element 60, and that instead of the opaque element 31 a transparent element 32 is used, and that the light-emitting diode chip 10 and the wavelength conversion element 60 are covered. <Zweite Ausführungsform>

[0037] With reference to the Fig. Sections 18 to 24 describe a light-emitting device 103 according to a second embodiment. Parts that have the same function as in the light-emitting device 100 according to the first embodiment use the same reference numerals as in the light-emitting device 100. Explanations of sections identical to those of the first embodiment are appropriately omitted. Viewed from above, a light-emitting device 103 has the shape of a square rectangle, and the light-emitting surface 140 is also square when viewed from above. Four outer surfaces 130a, 130b, 130c, and 130d of the light-emitting device have the same shape.

[0038] After the conductor frame 200 has been prepared, it is clamped between an upper mold, which includes several convex sections, and a lower mold. The resin section 30 is formed in the space between the upper and lower molds, resulting in a molded article that includes several concave surfaces corresponding to positions on the convex sections of the upper mold. These concave surfaces are capable of accommodating the LED chip 10. The LED chip 10 is die-bonded to the metal element 20, which is exposed at the bottom section of a concave surface of the molded article, via the electrically conductive connecting section 40. After an insulating, light-reflecting element 33 has been placed at the bottom section of a concave surface, the LED chip 10 is covered with the wavelength conversion element 60 and further covered with the light-transmitting element 32.Then, the material is separated along the separation plan lines and several light-emitting devices 103 are formed.

[0039] Metal element 20 comprises a first metal section 21, a second metal section 22, a third metal section 23, a fourth metal section 24, and a fifth metal section 25. As in Fig. As shown in Figure 18, the first metal section 21, viewed from above, is surrounded by the second metal section 22, the third metal section 23, the fourth metal section 24, and the fifth metal section 25. At least two projecting sections 21p are positioned next to the first metal section 21, at least two projecting sections 22p are positioned next to the second metal section 22, at least two projecting sections 23p are positioned next to the third metal section 23, at least two projecting sections 23p are positioned next to the fourth metal section 24, and at least two projecting sections 25p are positioned next to the fifth metal section 25.

[0040] In the second embodiment, the entire uppermost surface of the first metal section 21 is a connecting surface to the LED chip 10. The entire uppermost surface of the second metal section 22, the entire uppermost surface of the third metal section 23, the entire uppermost surface of the fourth metal section 24, and the entire uppermost surface of the fifth metal section 25 are likewise also connecting surfaces to the LED chip 10. The uppermost surfaces of the first metal section 21, the uppermost surface of the second metal section 22, the uppermost surface of the third metal section 23, the uppermost surface of the fourth metal section 24, and the uppermost surface of the fifth metal section 25, which are connected to the LED chip 10, are located, as shown in Fig. Figure 19 shows the bottom section of a concave surface exposed from the resin section 30. The uppermost surfaces of the first metal section 21, the second metal section 22, the third metal section 23, the fourth metal section 24, and the fifth metal section 25, exposed from the resin section, are contained within an area where the LED chip 10 is placed and are obscured by the LED chip 10 when viewed from above.

[0041] The top surface of the first metal section 21, the top surface of the second metal section 22, and the top surface of the fourth metal section 24 are, as shown in Fig. 20 is positioned higher than the uppermost surface covered by the resin section 30, for example by several tens of micrometers. This also applies to the uppermost surface of the third metal section 23 and the uppermost surface of the fifth metal section 25. A region of the surface on the upper side of the first metal section 21, abutting the free space 28, a region of the surface on the lower side of the second metal section 22, abutting the free space 28, a region of the surface on the lower side of the third metal section 23, abutting the free space 28, a region of the surface on the lower side of the fourth metal section 24, abutting the free space 28, and a region of the surface on the lower side of the fifth metal section 25, abutting the free space 28, are covered by the resin section 30.

[0042] The bottom surface of the first metal section 21, the bottom surface of the second metal section 22, the bottom surface of the third metal section 23, the bottom surface of the fourth metal section 24, and the bottom surface of the fifth metal section 25 are oriented as shown in Fig. As shown in Figure 21, the metal sections 21 on the underside 110 of the light-emitting device are free from the resin section 30 and serve as external connections for the light-emitting device 103. During operation of the light-emitting device 103, for example, the second metal section 22 and the third metal section 23 have the same electrical potential, and the fourth metal section 24 and the fifth metal section 25 have the same electrical potential. Between the second metal section 22 and the fourth metal section 24, there is a potential difference corresponding to the operating voltage. The first metal section 21 serves as an external connection for heat dissipation and can be directly connected to an external heat sink that is isolated from current-conducting connections.

[0043] The resin section 30 is continuously arranged between the first metal section 21 and the second metal section 22, between the first metal section 21 and the third metal section 23, between the first metal section 21 and the fourth metal section 24, and between the first metal section 21 and the fifth metal section 25, and reaches the four outer surfaces 130a, 130b, 130c, and 130d of the light-emitting device and serves as a surrounding wall that separates the concave surfaces. An inner surface of the concave surfaces consists, as shown in Fig. 20 shown, from the Harz section 30 and runs inclined from the vertical of the bottom section of the concave surfaces.

[0044] The LED chip 10, viewed from below, is square, for example. The LED chip 10 has a semiconductor section and a connection pad. Viewed from below, the semiconductor section has the shape of a square and comprises a single-crystal plate 11, a second electrically conductive semiconductor layer 12, a multiple quantum well layer 13, a first electrically conductive semiconductor layer 14, a first electrode layer 15a, a first insulating layer 17a, a dielectric multilayer membrane 17c, an extended electrode layer 15b, a second electrode layer 16, a second insulating layer 17b, and a third insulating layer 17d. The connection pad comprises a first connection pad 18 and at least two second connection pads 19 and consists of the following: Fig. The example shown in Figure 24 consists of a first connection pad 18 and four second connection pads 19. In the light-emitting diode chip 10, in the direction from the top side of the light-emitting device 103 to the bottom side, as shown in Figure 24, the following are arranged: Fig. 22 and Fig. Figure 23 shows the single-crystal plate 11, the second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, and the first electrically conductive semiconductor layer 14 arranged in sequence. The first electrode layer 15a is provided on a surface on the underside of the first electrically conductive semiconductor layer 14 and is electrically connected to it. The dielectric multilayer membrane 17c, which reflects light generated by the multiple quantum well layer, and the first insulating layer 17a are provided on a surface on the underside of the first electrode layer 15a.A hole is provided that penetrates the dielectric multilayer membrane 17c and the first insulating layer 17a, reaching the first electrode layer 15a, and an extended electrode layer 15b is arranged that covers the inner surface of this hole as well as an area of ​​the underside of the first insulating layer 17a. A hole is provided that penetrates the multi-quantum well layer 13, the first electrically conductive semiconductor layer 14, the first electrode layer 15a, the dielectric multilayer membrane 17c, the first insulating layer 17a, and the extended electrode layer 15b, reaching the second electrically conductive semiconductor layer 12, and a second insulating layer 17b is arranged that covers the inner surface of this hole as well as an area of ​​the underside of the extended electrode layer 15b.The second electrode layer 16 is provided inside a hole that reaches an area of ​​the lower side of the second insulating layer 17b as well as the second electrically conductive semiconductor layer 12, and is electrically connected to the second electrically conductive semiconductor layer 12. A hole is provided that penetrates the second insulating layer 17b as well as the second electrode layer 16 and reaches the extended electrode layer 15b, and a third insulating layer 17d is arranged that covers the inner surface of this hole as well as an area of ​​the lower side of the second electrode layer 16.

[0045] As in Fig. 20, Fig. 22 and Fig. As shown in Figure 23, the entire lower surface of the first terminal pad 18 is connected to the uppermost surface of the first metal section 21 via an electrically conductive connection section 40. The first metal section 21 is electrically insulated from the second electrode layer 16 by the third insulating layer 17d. Two adjacent second terminal pads 19 of the four second terminal pads 19 are electrically connected to the extended electrode layer 15b via a hole that penetrates the third insulating layer 17d, the second electrode layer 16, and the second insulating layer 17b, reaching the extended electrode layer 15b. The lower surfaces of these two adjacent second terminal pads 19 are connected to the uppermost surface of the second metal section 22 and the uppermost surface of the third metal section 23. Fig. 22). The two other adjacent second connection pads 19 of the four second connection pads 19 are electrically connected to the second electrode layer 16 via an opening section provided on the third insulating layer 17d. Lower surfaces of these two other adjacent second connection pads 19 are connected to the uppermost surface of the fourth metal section 24 and the uppermost surface of the fifth metal section 25 ( Fig. 23). The light-reflecting element 33 is arranged between the first connection pad 18 and the second connection pads 19. Directly above the first connection pad 18 and the four second connection pads 19 are positioned the second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, the first electrically conductive semiconductor layer 14, the first electrode layer 15a, the extended electrode layer 15b and the second electrode layer 16.

[0046] As in Fig. As shown in Figure 24, the first connection pad 18, viewed from below, is provided covering the third insulating layer 17d outside the four square corner sections 10c where the four second connection pads 19 are positioned. At least two second connection pads 19 are individually provided at the four square corner sections 10c, viewed from below. The third insulating layer 17d, exposed between the first connection pad 18 and the second connection pads 19, is positioned continuously between adjacent sides of a square. The area of ​​the first connection pad 18 is greater than the sum of the areas of the four second connection pads 19.An image of the uppermost surface of the first metal section 21, which is a connecting surface of the first metal section to the light-emitting device chip 10, projected perpendicularly onto a plane comprising the lower surface 110 of the light-emitting device 103, is completely contained in the lowermost surface of the first metal section 21, which is an exposed surface on the lower surface 110 of the light-emitting device 10 of the first metal section 21, and perpendicularly projected projection lines of the connecting surface of the first metal section 21 to the light-emitting device chip 10 only traverse the interior of the first metal section 21.

[0047] The uppermost surface of the first metal section 21, the uppermost surface of the second metal section 22, the uppermost surface of the third metal section 23, the uppermost surface of the fourth metal section 24, and the uppermost surface of the fifth metal section 25 are positioned higher than the surfaces of their upper sides that are covered by the resin section 30, and the resin section 30 covers the surface of the upper side of the first metal section 21, the second metal section 22, the third metal section 23, the fourth metal section 24, and the fifth metal section 25, except for the uppermost surface of the first metal section 21, the uppermost surface of the second metal section 22, the uppermost surface of the third metal section 23, the uppermost surface of the fourth metal section 24, and the uppermost surface of the fifth metal section 25.This contributes to generating a self-aligning effect when mounting the LED chip 10 by means of reflow soldering and flip-chip assembly. The precision of the LED chip 10's placement position can be achieved more easily, and the reduction of the cross-sectional area of ​​the heat radiation path due to positional deviations of the first connection pad 18 and the first metal section 21 is mitigated. Furthermore, if the light-emitting device 103 and an axisymmetric lens, which transmits light emanating from the light-emitting device 103, are provided on an externally supplied circuit board, the self-aligning effect can also help to reduce positional deviations of the LED chip 10 and the optical axis of the lens.

[0048] The structure of the above-described light-emitting diode chip 10 and metal element 20 is an example of the present disclosure, and other structures can also be used appropriately. For example, the light-emitting diode chip 10 can also have three different multiple quantum well layers 13, the four second connection pads 19 can have different electrical potentials, and current can be supplied independently to the three different multiple quantum well layers 13, thus emitting light. <Dritte Ausführungsform>

[0049] With reference to the Fig. Sections 25 to 30 describe a light-emitting device 104 according to a third embodiment. Parts that have the same function as in the light-emitting device 100 according to the first embodiment use the same reference numerals as in the light-emitting device 100. Explanations of sections that are identical to those of the first embodiment are appropriately omitted. Viewed from above, a light-emitting device 104 has a square cuboid shape.

[0050] As in Fig. As shown in Figure 25, the light-emitting diode chip 10 of the light-emitting device 104 is connected to the metal element 20, which comprises the first metal section 21 and second metal section 22 positioned below it, via the electrically conductive connecting section 40 by means of a flip-chip assembly. The light-emitting diode chip 10 spans the insulating resin section 30 between the first metal section 21 and the second metal section 22 and is connected to the uppermost surface of the first metal section 21 and to the uppermost surface of the second metal section 22. In the third embodiment, the entire uppermost surface of the first metal section 21 is a connecting surface to the light-emitting diode chip 10. The entire uppermost surface of the second metal section 22 is also a connecting surface to the light-emitting diode chip 10.The uppermost surfaces of the first metal section 21 and the second metal section 22, which are connected to the LED chip 10, are positioned higher than the surfaces of the upper side covered by the resin section 30 and, viewed from above, are contained within the area where the LED chip 10 is mounted. The resin section 30 is located between the first metal section 21 and the second metal section 22 and covers surfaces of the upper side of the first metal section 21 and the second metal section 22, with the exception of the uppermost surfaces of the first metal section 21 and the second metal section 22. The wavelength conversion element 60 is arranged to cover the LED chip 10.Furthermore, the translucent element 32 is arranged to cover the wavelength conversion element 60, and the opaque element 31 is arranged on a surface of the upper side of the translucent element 32.

[0051] In addition to the first metal section 21, at least two projecting sections 21p are positioned, and in addition to the second metal section 22, at least two projecting sections 22p are positioned. Specifically, they touch, as in Fig. Figure 26 shows two projecting sections 21p extending from the first metal section 21 and reaching the outer surface 130a of the light-emitting device, two projecting sections 21p touching the first metal section 21 and reaching the outer surface 130c of the light-emitting device, and one projecting section 21p touching the first metal section 21 and reaching the outer surface 130d of the light-emitting device. One projecting section 22p touching the second metal section 22 and reaching the outer surface 130a of the light-emitting device, one projecting section 22p touching the second metal section 22 and reaching the outer surface 130b of the light-emitting device, and one projecting section 22p touching the second metal section 22 and reaching the outer surface 130c of the light-emitting device.On the outer surface 130a and the outer surface 130c of the light-emitting device, end surfaces of the projection sections 21p, 22p of the metal element 20 are exposed from the resin section 30, and on the outer surface 130b of the light-emitting device, an end surface of a projection section 22p of the metal element 20 is exposed from the resin section 30, and on the outer surface 130d of the light-emitting device, an end surface of a projection section 21p of the metal element 20 is exposed from the resin section 30.

[0052] The lowest surface of the first metal section 21 and the lowest surface of the second metal section 22 of the metal element 20 lie, as shown in Fig. Figure 27 shows the underside 110 of the light-emitting device being free from the resin section 30. A projecting section 21p, reaching the outer surface 130d of the light-emitting device, and a projecting section 22p, reaching the outer surface 130b of the light-emitting device, differ in shape from the projecting sections reaching the other outer surfaces 130a and 130c of the light-emitting device. As shown in Fig. 27 and Fig. As shown in Figure 28, an end face of a projection section 21p, which reaches the outer surface 130d of the light-emitting device, also reaches the underside 110 of the light-emitting device. On the outer surface 130d of the light-emitting device, the outer surface of a projection section 21p exposed from the resin section 30 has a concave section 27. An end face of a projection section 22p reaching the outer surface 130b of the light-emitting device also reaches the underside 110 of the light-emitting device near the outer surface 130b. On the outer surface 130b of the light-emitting device, the outer surface of a projection section 22p exposed from the resin section 30 has a concave section 27.The resin section 30 does not exist on the concave sections 27 of the projection section 21p reaching the outer surface 130d of the light-emitting device and the projection section 22p reaching the outer surface 130b of the light-emitting device, and the individual concave sections 27 are visible from the side and from below. The lowest surface of the first metal section 21 and the lowest surface of the second metal section 22, which are exposed on the underside 110 of the light-emitting device, serve as external connections of the light-emitting device 104. The surfaces of the first metal section 21, the second metal section 22, the projecting section 21p and the projecting section 22p exposed by the resin section 30 can be soldered to an externally provided circuit board, and solder fillets can be formed on the individual concave sections 27 of the projecting section 21p and the projecting section 22p.

[0053] In the square light-emitting diode chip 10, viewed from below, the following are arranged in the direction from the top side of the light-emitting device 104 to the bottom side, as shown in Fig. Figure 29 shows the single-crystal plate 11, the second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, and the first electrically conductive semiconductor layer 14 arranged in sequence. The first electrode layer 15a is provided on a surface on the underside of the first electrically conductive semiconductor layer 14 and is electrically connected to it. The dielectric multilayer membrane 17c, which reflects light generated by the multiple quantum well layer, and the first insulating layer 17a are provided on a surface on the underside of the first electrode layer 15a.A hole is provided that penetrates the dielectric multilayer membrane 17c and the first insulating layer 17a, reaching the first electrode layer 15a, and an extended electrode layer 15b is arranged that covers the inner surface of this hole as well as an area of ​​the underside of the first insulating layer 17a. A hole is provided that penetrates the multi-quantum well layer 13, the first electrically conductive semiconductor layer 14, the first electrode layer 15a, the dielectric multilayer membrane 17c, the first insulating layer 17a, and the extended electrode layer 15b, reaching the second electrically conductive semiconductor layer 12, and a second insulating layer 17b is arranged that covers the inner surface of this hole as well as an area of ​​the underside of the extended electrode layer 15b.The second electrode layer 16 is provided inside a hole that reaches a surface of the lower side of the second insulating layer 17b and the second electrically conductive semiconductor layer 12, and is electrically connected to the second electrically conductive semiconductor layer 12. A hole is provided that penetrates the second insulating layer 17b and the second electrode layer 16 and reaches the extended electrode layer 15b, and a third insulating layer 17d is arranged that covers the inner surface of this hole and a surface of the lower side of the second electrode layer 16. The first terminal pad 18 is electrically connected to the second electrode layer 16 via an opening section provided on the third insulating layer 17d.A second terminal pad 19 is electrically connected to the extended electrode layer 15b via a hole that penetrates the third insulating layer 17d, the second electrode layer 16, and the second insulating layer 17b, reaching the extended electrode layer 15b. Directly above the first terminal pad 18 and two second terminal pads 19 are positioned the second electrically conductive semiconductor layer 12, the multiple quantum well layer 13, the first electrically conductive semiconductor layer 14, the first electrode layer 15a, the extended electrode layer 15b, and the second electrode layer 16.

[0054] The connection pad comprises a first connection pad 18 and at least two second connection pads 19 and consists of in Fig. 30. Example shown from a first connection pad 18 and two second connection pads 19. As in Fig. As shown in Figure 30, the first connection pad 18, viewed from below, is provided covering the third insulating layer 17d outside two adjacent square corner sections 10c, on which two second connection pads 19 are positioned. The two second connection pads 19 are provided on two adjacent square corner sections 10c, viewed from below. The third insulating layer 17d, exposed between the first connection pad 18 and the second connection pads 19, is positioned continuously between adjacent sides of a square. The area of ​​the first connection pad 18 is greater than the sum of the areas of the two second connection pads 19.

[0055] The entire lower surface of the first connection pad 18 is connected to the upper surface of the first metal section 21 via the electrically conductive connection section 40. The lower surfaces of the two second connection pads 19 are each connected to the upper surface of the second metal section 22 via the electrically conductive connection section 40. The light-reflecting element 33 is arranged between the first connection pad 18 and the second connection pads 19. Directly below the LED chip 10, the area of ​​the lower surface of the first metal section 21 on the side opposite the upper surface of the first metal section 21 is larger than the area of ​​the upper surface of the first metal section 21.An image of the connecting surface of the first metal section 21 to the light-emitting device chip 10, projected perpendicularly onto a plane comprising a plane section of the underside 110 of the light-emitting device 104, is completely contained in the exposed area on the underside 110 of the first metal section 21, and perpendicular projection lines of the connecting surface of the first metal section 21 to the light-emitting device chip 10 only traverse the interior of the first metal section 21.

[0056] The fact that the uppermost surface of the first metal section 21 and the uppermost surface of the second metal section 22 are positioned higher than the surfaces of the upper side covered by the resin section 30, and that the resin section 30 covers not only the uppermost surface of the first metal section 21 and the uppermost surface of the second metal section 22, but also the surfaces of the upper side of the first metal section 21 and the second metal section 22, contributes to a self-aligning effect during reflow soldering and assembly using flip-chip mounting of the LED chip 10. The precision of the LED chip 10's placement can be achieved more easily, and the reduction of the cross-sectional area of ​​the heat radiation path due to positional deviations of the first connection pad 18 and the first metal section 21 is mitigated.

[0057] When the light-emitting device 104 is soldered to an externally supplied printed circuit board by means of reflow soldering, the concave sections 27 at the end sections of the first metal section 21 and the second metal section 22, which reach the outer surfaces 130b, 130d and the underside 110 of the light-emitting device, contribute to a self-aligning effect. Solder joints formed between the individual concave sections 27 of the end sections of the first metal section 21 and the second metal section 22 and the printed circuit board strengthen the connection between the light-emitting device 104 and the printed circuit board.

[0058] The structure of the above-described light-emitting diode chip 10 and metal element 20 is an example, and other structures can be used appropriately. It is also possible to modify the electrical connection between the first terminal pad 18 and the second terminal pad 19 and the first electrically conductive semiconductor layer 14 and the second electrically conductive semiconductor layer 12, and to use other arrangements. For example, two second terminal pads 19 can be provided at two non-adjacent corner sections 10c.

[0059] The present disclosure includes the following details. Point 1

[0060] Light-emitting device comprising a light-emitting diode chip having a top surface and a bottom surface, a first metal section and a second metal section positioned below the light-emitting diode chip, and a resin section positioned between the first metal section and the second metal section, wherein the light-emitting diode chip comprises a semiconductor section rectangular when viewed from below, a first connection pad provided in a region enclosing the center point of the bottom surface of the semiconductor section, and at least two second connection pads provided in at least two corner sections from the four corner sections of the bottom surface of the semiconductor section.exhibits and the first metal section and the second metal section are exposed from the resin section on a light-emitting device underside of the light-emitting device and the first connection pad is connected to the first metal section over the entire underside and the at least two second connection pads are connected to the second metal section and the area of ​​the first connection pad is larger than the area of ​​the at least two second connection pads. Point 2

[0061] Light-emitting device according to point 1, wherein outer surfaces of the first connection pad form a section of the individual outer surfaces of the light-emitting diode chip. Point 3

[0062] Light-emitting device according to point 1 or 2, wherein the first electrically conductive semiconductor layer and the second electrically conductive semiconductor layer of the light-emitting diode chip are positioned directly above the one first connection pad and the at least two second connection pads. Point 4

[0063] Light-emitting device according to one of points 1 to 3, wherein an image of the connecting surface of the first metal section to the light-emitting diode chip projected perpendicularly onto a plane containing the underside of the light-emitting device is completely contained in the exposed surface on the underside of the light-emitting device of the first metal section, and perpendicularly projected projection lines of the connecting surface of the first metal section to the light-emitting diode chip only pass through the interior of the first metal section. Point 5

[0064] Light-emitting device according to one of points 1 to 3, wherein the surfaces of the upper side of the first metal section, except for the connecting surface of the first metal section to the light-emitting diode chip, are covered by the resin section and the surfaces of the upper side of the second metal section, except for the connecting surface of the second metal section to the light-emitting diode chip, are covered by the resin section. Point 6

[0065] Light-emitting device according to any one of points 1 to 5, wherein the at least two second connection pads are individually positioned in four corner sections of the lower surface of the semiconductor section. Point 7

[0066] Light-emitting device according to point 6, wherein the light-emitting device comprises a third metal section and, viewed from below, the second metal section and the third metal section are arranged on both sides of the first metal section. Point 8

[0067] Light-emitting device according to point 6, wherein the light-emitting device comprises a third metal section, a fourth metal section and a fifth metal section and, viewed from above, the first metal section is surrounded by the second metal section, third metal section, fourth metal section and fifth metal section. Point 9

[0068] Light-emitting device according to any one of points 1 to 8, wherein the light-emitting device comprises a projection section on the side of the first metal section and has a concave section on an outer surface of the projection section on an outer surface of the light-emitting device. Point 10

[0069] Light-emitting device according to point 4, wherein the area of ​​the lowest surface of the first metal section is larger than the area of ​​the uppermost surface of the first metal section. Potential for industrial use

[0070] A light-emitting device according to the embodiments of the present disclosure can be used for a backlight light source of an LCD screen, a projector device, a lighting device, various luminaires and the like. [List of reference symbols] 100, 101, 102, 103, 104 light-emitting device 110 Light emitting device underside 120 Light emitting device top 130 (130a, 130b, 130c, 130d) Light emitting device outer surface 140 light-emitting surface 10 LED chips 10c Corner section 11 single crystal plate 12 second electrically conductive semiconductor layer 13 Multiple quantum well layer 14 first electrically conductive semiconductor layer 15a first electrode layer 15b extended electrode layer 16 second electrode layer 17a first insulating layer 17b second insulating layer 17c dielectric multilayer membrane 17d third insulating layer 18 first connection pad 19 second connection pad 200 cable frames 210 outer frame 220 connecting section 230 island 20 metal elements 21 first metal section 21p lead section 22 second metal section 22p lead section 23 third metal section 23p lead section 24 fourth metal section 24p lead section 25 fifth metal section 25p lead section 27 Concave section 28 Free space 29 Nut 30 Harz section 31 opaque element 32 translucent elements 33 light reflecting element 40 electrically conductive connecting section 50 translucent adhesive elements 60 wavelength conversion element 71 upper form 72 lower form 81 Separation line QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2019-021919 A ​​

[0004] Zitierte Nicht-Patentliteratur

[0000] C. Y. Tang,M. Y. Tsai,C. C. Lin und L. B. Chang, „Thermal measurements and analysis of flip-chip LED packages with and without underfills" 2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference,20.-22. Okt. 2010,DOI: 10. 1109 / IMPACT.2010.5699638

[0005]

Claims

[1] Light-emitting device comprising a light-emitting diode chip having a top surface and a bottom surface, a first metal section and a second metal section positioned below the light-emitting diode chip, and a resin section positioned between the first metal section and the second metal section, wherein the light-emitting diode chip comprises a rectangular semiconductor section viewed from below, a first connection pad provided in a region enclosing the center point of the bottom surface of the semiconductor section, and at least two second connection pads provided in at least two corner sections of the four corner sections of the bottom surface of the semiconductor section.exhibits and the first metal section and the second metal section are exposed from the resin section on a light-emitting device underside of the light-emitting device and the first connection pad is connected to the first metal section over its entire underside and the at least two second connection pads are connected to the second metal section and the area of ​​the first connection pad is larger than the area of ​​the at least two second connection pads. [2] Light-emitting device according to claim 1, wherein outer surfaces of a first connection pad form a section of the outer surfaces of the light-emitting diode chip. [3] Light-emitting device according to claim 1 or 2, wherein the first electrically conductive semiconductor layer and the second electrically conductive semiconductor layer of the light-emitting diode chip are positioned directly above the one first connection pad and the at least two second connection pads. [4] Light-emitting device according to any one of claims 1 to 3, wherein an image of the connection surface of the first metal section to the light-emitting diode chip projected perpendicularly onto a plane containing the underside of the light-emitting device is completely contained in the exposed area on the underside of the light-emitting device of the first metal section, and perpendicularly projected projection lines of the connection surface of the first metal section to the light-emitting diode chip only pass through the interior of the first metal section. [5] Light-emitting device according to one of claims 1 to 3, wherein the surfaces of the upper side of the first metal section, except for the connecting surface of the first metal section to the light-emitting diode chip, are covered by the resin section and the surfaces of the upper side of the second metal section, except for the connecting surface of the second metal section to the light-emitting diode chip, are covered by the resin section. [6] Light-emitting device according to any one of claims 1 to 5, wherein the at least two second connection pads are individually positioned in four corner sections of the lower surface of the semiconductor section. [7] Light-emitting device according to claim 6, wherein the light-emitting device comprises a third metal section and, viewed from below, the second metal section and the third metal section are arranged on both sides of the first metal section. [8] Light-emitting device according to claim 6, wherein the light-emitting device comprises a third metal section, a fourth metal section and a fifth metal section and, viewed from above, the first metal section is surrounded by the second metal section, third metal section, fourth metal section and fifth metal section. [9] Light-emitting device according to any one of claims 1 to 8, wherein the light-emitting device comprises a projection section on the side of the first metal section and has a concave section on an outer surface of the projection section on an outer surface of the light-emitting device. [10] Light-emitting device according to claim 4, wherein the area of ​​the lowest surface of the first metal section is larger than the area of ​​the uppermost surface of the first metal section.

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