Power converter unit

Abstract

Power converter device comprising a first semiconductor element module (12W1), a second semiconductor element module (12W2) and a conduction element (44), wherein the second semiconductor element module (12W1) is different from the first semiconductor element module (12W2), and wherein the first semiconductor element module (12W1) and the second semiconductor element module (12W2) each have a first main terminal and a second main terminal, and wherein the first semiconductor element module (12W1) and the second semiconductor element module (12W2) are arranged along a predetermined direction (X) towards each other and at a distance (e1, e2, e3, e4) from each other, forming a gap between the first semiconductor element module (12W1) and the second semiconductor element module (12W2), and wherein the conducting element (44) extends in the specified direction (X) and electrically connects the first main terminal of the first semiconductor element module (12W1) to the first main terminal of the second semiconductor element module (12W2), and the conducting element (44) electrically connects the second main terminal of the first semiconductor element module (12W1) to the second main terminal of the second semiconductor element module (12W2), wherein a first potential is applied to each first main terminal, and wherein a second potential is applied to each second main terminal, the second potential being different from the first potential, and wherein the first main terminal of the first semiconductor element module (12W1) and the second main terminal of the second semiconductor element module (12W2) are arranged opposite each other, and wherein the conducting element has an insulating separation (45, 45A, 45B) formed on the conducting element (44), wherein the insulating separation (45, 45A, 45B) is upright and extends from the conducting element (44) into the space between the first semiconductor element module (12W1) and the second semiconductor element module (12W2), wherein a height of the insulating separation in the space exceeds the height of the thicknesses of the first main terminal of the first semiconductor element module (12W1) and the second main terminal of the second semiconductor element module (12W2) by a predetermined height (b), and wherein the insulating separation (45; 45A, 45B) Line of sight between the first main terminal of the first semiconductor module (12W1) and the second main terminal of the second semiconductor module (12W2) is blocked.

Description

POWER CONVERTER DEVICE Area

[0001] The present invention relates to a power converter device comprising semiconductor element modules and utilizing a conductor element for electrically connecting the main terminals of the semiconductor element modules to one another. background

[0002] WO 2012 / 108048 A1 discloses a power converter device comprising semiconductor element modules electrically connected to each other by means of a bus rail.

[0003] JP 2012-5301 A discloses a packed semiconductor element module comprising multiple sets of semiconductor switching elements inserted into a cast housing. Control terminals for the semiconductor element module are arranged on a terminal block section formed on a side edge of the cast housing. A ribbed insulating barrier is formed on the terminal block section. The ribbed insulating barrier stands upright between the adjacent control terminal groups, each corresponding to a set of semiconductor switching elements. The height and thickness dimensions of the insulating barrier are specified in accordance with the spatial distances defined in international standards, see IEC 60077-1 "Railway applications - Electrical equipment on railway vehicles - Part 1: General operating conditions and general rules / Standard IEC 60077-1 1999-10-00".Railway applications – electric equipment for rolling stock – part 1: general service conditions and general rules.

[0004] Publication US 2014 / 0346659 A1 discloses a semiconductor device comprising semiconductor modules in which a printed circuit board, on which at least one or more semiconductor chips are mounted, is sealed with a potting material and a mounting hole is formed; main connection plates that individually connect the individual connection terminals of the multiple semiconductor modules arranged in parallel; and a module storage housing into which the multiple semiconductor modules, connected by the main connection plates, are inserted together with the main connection plates from an opening area, and which holds the multiple semiconductor modules in such a way that the position of the semiconductor modules can be adjusted during assembly, and which includes mounting insertion holes opposite the mounting holes of the semiconductor modules.In an area of ​​the module storage housing that accommodates the main connection plates, insulating partition walls are provided which, after the insertion of the several semiconductor modules and the main connection plates, form an insulating separation between the main connection plates and between pin-shaped conductor bodies, which are the main connections of the semiconductor modules and to which the main connection plates are attached.

[0005] German patent application DE 10 2014 110 617 A1 discloses a power semiconductor module system comprising a power semiconductor module and a printed circuit board. The power semiconductor module has a module housing with a top surface, a first terminal group, and a second terminal group. The first terminal group has at least one first electrical connection, or at least two first electrical connections, which are permanently electrically connected to each other. The second terminal group has at least one second electrical connection, or at least two second electrical connections, which are permanently electrically connected to each other. The power semiconductor module system further comprises a first insulating rib and / or a second insulating rib.

[0006] German patent application DE 10 2010 002 627 A1 discloses a low-inductance power semiconductor assembly. The semiconductor switches used are arranged in series in a main current direction. One embodiment shows a converter mounted on a heat sink, in which the upper and lower half-bridge branches are each arranged on separate circuit carriers and in separate housings. The electrical interconnection of the half-bridge branches and their connection to a DC link voltage source is achieved via a stripline comprising strip conductors electrically insulated from each other by a dielectric. Additional strip conductors serve to connect a load M to the phase outputs and to connect the upper half-bridge branches to the corresponding lower half-bridge branches of the same half-bridge. DC link capacitors are also provided. Brief description of the technical problem

[0007] The technique disclosed in JP 2012-5301A is effective in miniaturizing the semiconductor module itself. However, this technique does not contribute to miniaturizing the distance between the main terminals of the semiconductor modules. In a case where a power converter device is configured to utilize multiple semiconductor modules, it is necessary to provide an isolation distance between the semiconductor modules, which is a spatial distance corresponding to the voltage that can be applied to the main terminals. For this reason, the isolation distance between the main terminals of the semiconductor modules is a bottleneck in determining the size of the power converter device. Therefore, the distance between the semiconductor modules cannot be shorter than the isolation distance, which imposes a limitation on miniaturizing the power converter device.

[0008] The present invention was made to solve the aforementioned problems, and it is an object of the present invention to provide a power converter device with a conductor element that can make the distance between the main terminals of semiconductor element modules shorter than an insulation distance. Solution to the problem

[0009] To solve the aforementioned problems and achieve a solution to the task, the present invention, according to the features of claim 1, provides a power converter device comprising a first semiconductor element module, a second semiconductor element module, and a conduction element, wherein the second semiconductor element module is different from the first semiconductor element module, and wherein the first semiconductor element module and the second semiconductor element module each have a first main terminal and a second main terminal, and wherein the first semiconductor element module and the second semiconductor element module are arranged along a predetermined direction relative to each other and at a distance from each other, whereby a gap is formed between the first semiconductor element module and the second semiconductor element module.and wherein the conducting element extends in the specified direction and electrically connects the first main terminal of the first semiconductor element module to the first main terminal of the second semiconductor element module, and wherein the conducting element electrically connects the second main terminal of the first semiconductor element module to the second main terminal of the second semiconductor element module, wherein a first potential is applied to each first main terminal, and wherein a second potential is applied to each second main terminal, the second potential being different from the first potential, and wherein the first main terminal of the first semiconductor element module and the second main terminal of the second semiconductor element module are arranged opposite each other, and wherein the conducting element has an insulating separation formed on the conducting element,wherein the insulating barrier is upright and extends from the conducting element into the space between the first semiconductor module and the second semiconductor module, wherein a height of the insulating barrier in the space exceeds the thicknesses of the first main terminal of the first semiconductor module and the second main terminal of the second semiconductor module by a predetermined height, and wherein the insulating barrier blocks a line of sight between the first main terminal of the first semiconductor module and the second main terminal of the second semiconductor module.

[0010] Advantageous embodiments of the power converter device according to the invention are specified in the dependent claims. Advantageous effects of the invention

[0011] According to the present invention, there is an effect that a power converter device can be miniaturized because the distance between the main terminals of the semiconductor element modules can be shorter than the isolation distance. Brief description of drawings Fig. Figure 1 shows a circuit diagram representing an example configuration of a power converter device according to a first embodiment. Fig. Figure 2 shows a circuit diagram representing another example configuration of the power converter device according to the first embodiment. Fig. Figure 3 shows a top view illustrating the location of individual terminals in a semiconductor element module used in the power converter device according to the first embodiment. Fig. Figure 4 shows a circuit diagram of a converter circuit or inverter circuit, which is used in Fig. 1 is shown, on which the semiconductor element module, which is in Fig. 3 is shown, is loaded. Fig. Figure 5 shows a top view, which schematically illustrates an example of the location of two semiconductor element modules of the power converter device according to the first embodiment. Fig. Figure 6 shows a cross-sectional diagram that runs along a line VI-VI in Fig. 5 is taken, and schematically represents a connection between the semiconductor element modules and a conductor element according to the first embodiment. Fig. Figure 7 shows a top view viewed in the direction of an arrow A in Fig. 6. Fig. Figure 8 shows a diagram used to explain the effect of the conductor element according to the first embodiment. Fig. Figure 9 shows a diagram used to explain the effect of a conductor element different from the conductor element in Fig. 6 is used. Fig. Figure 10 shows a diagram used to explain the effect of a conductor element according to a second embodiment. Fig. Figure 11 shows a diagram used to explain the effect of a different conductor element compared to the conductor element in Fig. 10 is used. Description of embodiments

[0012] The present invention is explained in more detail below by way of a detailed description of embodiments with reference to the accompanying drawings. In the embodiments described below, a power converter device for driving a rail vehicle is described as one example. However, this is not intended to exclude its application to other uses. In the accompanying drawings, the scale of each element sometimes differs from the actual scale for ease of understanding. The scale also varies between the drawings. First embodiment

[0013] Fig. Figure 1 shows a circuit diagram representing an example configuration of a power converter device according to a first embodiment. Fig. Figure 2 shows a circuit diagram representing another example configuration of the power converter device according to the first embodiment.

[0014] In Fig. 1 The power converter device according to the first embodiment comprises an input circuit 2, an inverter circuit 3, and a control unit 7. The input circuit 2 includes at least one switch, a filter capacitor, and a filter inductor. The inverter circuit 3 is provided with switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1, and 6b2 and is connected to at least one motor 8. The control unit 7 generates and outputs a pulse-width modulation (hereinafter referred to as "PWM") signal for controlling the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1, and 6b2. An example of the motor 8, which is connected to the inverter circuit 3, is an induction motor or a synchronous motor.

[0015] One end of the input circuit 2 is connected to an overhead line contact line 50 via a current collector 51, while the opposite end of the input circuit 2 is connected to a rail 52, which is at ground potential, via wheels 53. DC or AC power is thus conducted from the overhead line contact line 50 and supplied to an input terminal of the input circuit 2 via the current collector 51, and power generated at an output terminal of the input circuit 2 is supplied to the inverter circuit 3.

[0016] Switching element 4a1 and switching element 4b1 of inverter circuit 3 are a positive switching element and a negative switching element, respectively. Switching element 4a1 and switching element 4b1 are connected in series and define a U-phase-first leg. Similarly, switching element 4a2 and switching element 4b2, which are a positive switching element and a negative switching element, respectively, are connected in series and define a U-phase-second leg. The positive switching elements are also referred to as the "positive arm" or "upper arm." The negative switching elements are also referred to as the "negative arm" or "lower arm." The U-phase-first leg is represented as "U1," while the U-phase-second leg is represented as "U2."

[0017] The same applies to a V-phase and a W-phase. The V-phase and the W-phase are described below in the same way as the U-phase. Switching element 5a1 and switching element 5b1 are connected in series and define a V-phase first leg. Switching element 5a2 and switching element 5b2 are connected in series and define a V-phase second leg. Switching element 6a1 and switching element 6b1 are connected in series and define a W-phase first leg. Switching element 6a2 and switching element 6b2 are connected in series and define a W-phase second leg. Similar to the U-phase, the V-phase first leg is represented as "V1", while the V-phase second leg is represented as "V2". Similarly, the W-phase first limb is represented as "W1", while the W-phase second limb is represented as "W2".

[0018] The converter circuit 3 is a three-phase converter circuit in which the first and second legs for each phase are connected in parallel. It is preferred that the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1 and 6b2 are MOSFETs (metal-oxide-semiconductor field-effect transistors) or IGBTs (insulated-gate bipolar transistors) in which diodes are included that are connected in reverse parallel.

[0019] The control unit 7 performs PWM control on the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1 and 6b2 on the inverter circuit 3 by means of a PWM signal. The PWM control performed by the control unit 7 enables the inverter circuit 3 to convert a DC voltage supplied by the input circuit 2 into any AC voltage of any frequency and to supply the AC voltage to the motor 8, which is then driven by the motor 8.

[0020] Meanwhile, in a case where a switching element chip is mounted, if the chip area is increased, the yield of chips taken from the wafer is reduced. Conversely, if the chip area is reduced, the yield can be improved. Particularly in a case where the switching elements (hereafter referred to as "SiC elements") made of silicon carbide (SiC) are used, it is desirable to reduce the chip area to lower chip costs because wafers are very expensive. For this reason, in a case where SiC elements are used, converter circuit 3 of the Fig. 1, which uses the two parallel connected legs for each phase, is more advantageous for cost reduction than a 3A converter circuit according to Fig. 2, which has a single leg for each phase. This means that in large-capacity applications, such as power converters for driving a rail vehicle, the legs for each phase are connected in parallel, as in Fig. Figure 1 shows that this makes it possible to reduce the costs of the power converter unit.

[0021] Silicon carbide (SiC) is an example of a wide-bandgap semiconductor that exhibits bandgap characteristics similar to silicon (Si). A semiconductor made from a gallium nitride-based material or diamond, which is another example of a wide-bandgap semiconductor, also exhibits similar properties to SiC in many aspects. For this reason, even when using a different type of wide-bandgap semiconductor besides SiC, the configuration in which the legs for each phase are connected in parallel is still effective in achieving both high capacity and cost reduction.

[0022] Fig. Figure 3 shows a top view illustrating the location of individual terminals of a semiconductor element module 12 used in the power converter device according to the first embodiment. Fig. Figure 4 shows a circuit diagram of the inverter circuit 3, which is located in Fig. Figure 1 shows the semiconductor element modules 12, which are in Fig. 3 are shown, will be charged.

[0023] The semiconductor element modules 12 used in the power converter device according to the first embodiment have a packing 30, which is a module housing. Although in Fig. Not shown in Figure 3, the semiconductor element module 12 has a pair of semiconductor switching elements connected in series within the package 30.

[0024] Fig. Figure 3 represents the packing 30 on the left coordinate axis, in which the longitudinal direction of the packing 30 is defined as an X-axis direction, the shorter lateral direction in the packing 30 is defined as a Y-axis direction, and the direction perpendicular to both the X-axis and Y-axis directions is defined as a Z-axis direction. As in Fig. As shown in Figure 3, in package 30, a first terminal M1 and a second terminal M2 are arranged closer to one end face of package 30 in the X-axis direction. Package 30 also provides a third terminal M3 closer to the other end face. The first terminal M1 provides a positive DC terminal P, which is one of the main terminals of the semiconductor module 12. The second terminal M2 provides a negative DC terminal N, which is another of the main terminals of the semiconductor module 12. The third terminal M3 provides an AC terminal, which is another of the main terminals of the semiconductor module 12.

[0025] In Fig. Figure 4 comprises a semiconductor element module 12U1, which is driven on a U1 phase, the switching element 4a1, and the switching element 4b1. The switching element 4a1 is formed by a MOSFET 4als and a diode 4a1d, which are connected in opposite parallel to the MOSFET 4als. The MOSFET 4als is represented as an example of a transistor element. The diode 4a1d acts as what is referred to as a freewheeling diode (hereafter represented as "FWD"). The switching element 4b1 is formed by a MOSFET 4b1s and an FWD 4b1d, which are connected in opposite parallel. The switching element 4a1 and the switching element 4b1 are connected in series and included in the package 30, which is the module housing. The switching elements 4a1 and 4b1 form a switching element pair of semiconductor element modules 12U1. Similarly, a semiconductor element module 12U2, which is driven on a U2 phase, is configured identically to the semiconductor element module 12U1.Similarly, semiconductor module 12V1, 12V2, 12W1, and 12W2, which are driven by a V1 phase, a V2 phase, a W1 phase, and a W2 phase respectively, are configured identically to semiconductor module 12U1. As described above, each of the semiconductor module 12U1, 12U2, 12V1, 12V2, 12W1, and 12W2 is a two-in-one module containing the two switching elements connected in series.

[0026] A drain, which is a positive electrode of MOSFET 4als, is electrically connected to the first terminal M1. A source, which is a negative electrode of MOSFET 4b1s, is electrically connected to the second terminal M2. A source, which is a negative electrode of MOSFET 4als, and a drain, which is a positive electrode of MOSFET 4b1s, are electrically connected to the third terminal M3. The first terminals M1 of the semiconductor element modules 12U1, 12U2, 12V1, 12V2, 12W1, and 12W2 are electrically connected to a positive bus bar 11P, which extends from the positive DC terminal P of the filter capacitor 10. The second terminals M2 of the semiconductor element modules 12U1, 12U2, 12V1, 12V2, 12W1 and 12W2 are electrically connected to a negative bus bar 11N, which extends from the negative DC terminal N of the filter capacitor 10.The filter capacitor 10 is a capacitor that accumulates direct current power required for power conversion and serves as a power supply source for the power converter device.

[0027] The third terminal M3 of semiconductor module 12U1 and the third terminal M3 of semiconductor module 12U2 are electrically connected to form a U-phase AC connection, which is electrically connected to the U-phase of motor 8. The third terminal M3 of semiconductor module 12V1 and the third terminal M3 of semiconductor module 12V2 are electrically connected to form a V-phase AC connection, which is electrically connected to the V-phase of motor 8. The third terminal M3 of semiconductor module 12W1 and the third terminal M3 of semiconductor module 12W2 are electrically connected to form a W-phase AC connection, which is electrically connected to the W-phase of motor 8.

[0028] As described above, the semiconductor module units 12U1, 12U2, 12V1, 12V2, 12W1, and 12W2 are mounted and operated on the inverter circuit 3. When the inverter circuit 3 is operating, a potential output is applied to the first terminal M1 of each semiconductor module via the positive DC terminal P of the filter capacitor 10, and a potential output is applied to the second terminal M2 of each semiconductor module via the negative DC terminal N of the filter capacitor 10. Either a potential output via the positive DC terminal P of the filter capacitor 10 or a potential output via the negative DC terminal N of the filter capacitor 10 is applied to the third terminal M3 of each semiconductor module by a switched-on switching element, according to the switching operation of the switching elements.

[0029] Although the switching elements 4a1 and 4b1 are mounted on the semiconductor element module 12U1, and, for example, MOSFETs in Fig. Since there are 4, the switching elements 4a1 and 4b1 can be of a different type than the MOSFETs. Examples of switching elements other than MOSFETs are an IGBT and an IPM (Intelligent Power Module).

[0030] Again with reference to the Fig. Section 3 describes the configuration of each terminal of the semiconductor module 12. The packing 30 of the semiconductor module 12 is configured in a horizontal, elongated form. The first terminal M1 is provided with two electrodes 35. Each of the electrodes 35 is provided with a mounting point 32P. The second terminal M2 is provided with two electrodes 40. Each of the electrodes 40 is provided with a mounting point 32N. The third terminal M3 is provided with three electrodes 37. Each of the electrodes 37 is provided with a mounting point 32AC. Providing a plurality of such mounting points for the electrodes of the first terminal M1, the second terminal M2, and the third terminal M3 achieves the advantage of improving current shunting among the chips within the module, thereby reducing heat generation imbalances within the module. Fig. In the first terminal M1, the number of attachment points 32P on electrode 35 is two, the number of attachment points 32N on electrode 40 of the second terminal M2 is two, and the number of attachment points 32AC on electrode 37 of the third terminal M3 is three. The number of these attachment points can be changed according to the current capacities. This means that the number of attachment points 32P on the first terminal M1 can be three or more, and the number of attachment points 32N on the second terminal M2 can be three or more. Furthermore, the number of attachment points 32AC on the third terminal M3 can be either two or more than three.

[0031] The package 30 has a short side section 33 that defines one side of it in the X-axis direction. The two electrodes 35 of the first terminal M1, which are arranged on a short side section 33 of the package 30, are arranged and spaced apart from each other in the Y-axis direction of the package 30. The two electrodes 40 of the second terminal M2, which are arranged parallel to the direction of arrangement of the two electrodes 35 of the first terminal M1, are arranged further inwards, meaning that they are closer to the central section of the package 30 than the first terminal M1. The package 30 also has a short side section 34 that defines the side opposite it in the X-axis direction. The three electrodes 37 of the third terminal M3, which are arranged on the short side section 34, are arranged and spaced apart from each other in the Y-axis direction of the package 30.These arranged electrodes of the first terminal M1, the second terminal M2 and the third terminal M3 are symmetrical with respect to a center line K1, which connects the center of the short side section 33 of the packing 30 in the Y-axis direction and the center of the short side section 34 of the packing 30 in the Y-axis direction.

[0032] An electrode 35 of the first terminal M1 and an electrode 40 of the second terminal M2 are spaced apart by a distance d in the X-axis direction. The distance d is an insulation distance, meaning a distance required for insulation. The distance d, which is a value specified in accordance with IEC 60077-1, corresponds to the difference between a voltage applied to the first terminal M1 and a voltage applied to the second terminal M2, meaning a potential difference between the first terminal M1 and the second terminal M2.

[0033] The two mounting points 32P of the first terminal M1 are arranged such that a side 35a, located outside the mounting point 32P, is close to and along a side 33a of the short side section 33, which defines one side of the pack 30. Furthermore, on the short side section 34, which defines the opposite side of the pack 30, is a base section 36 on which the three mounting points 32AC of the third terminal M3 are mounted. The three mounting points 32AC of the third terminal M3 are arranged such that a side 37a, located outside the mounting point 32AC, is close to and along a longitudinal side 36a of the base section 36.

[0034] The two electrodes 35 of the first terminal M1 and the three electrodes 37 of the third terminal M3 are configured as described above, thereby eliminating the need to increase the size of the package 30, which is a housing for the semiconductor element module 12. Furthermore, this configuration makes it possible to mount an area to secure the semiconductor elements contained within the package 30.

[0035] Although in Fig. 3. If the first terminal M1 is located on the outside of the package 30, while the second terminal M2 is located on the inside of the package 30, the positional relationship between the first terminal M1 and the second terminal M2 is reversed. This means that the second terminal M2 can be located on the outside of the package 30, while the first terminal M1 can be located on the inside of the package 30.

[0036] Next, configurations of relevant parts of the conductor element and the power converter device according to the first embodiment will be described with reference to the Fig. 5 to 9 described. Fig. Figure 5 shows a top view, which schematically represents an example of the location of the two semiconductor element modules of the power converter device according to the first embodiment. Fig. Figure 6 shows a cross-sectional diagram along a line VI-VI in Fig. 5, and schematically represents a connection between the semiconductor element modules and a laminated busbar, which is the conductor element according to the first embodiment. Fig. Figure 7 shows a top view viewed in the direction of an arrow A in Fig. 6. Fig. Figure 8 shows a diagram used to explain the effects of the conductor element according to the first embodiment. Fig. Figure 9 shows a diagram used to explain the effect of a conductor element different from the conductor element in Fig. 6 is used.

[0037] Fig. Figure 5 represents the semiconductor element module 12W1, which forms the W1 phase, and the semiconductor element module 12W2, which forms the W2 phase. Fig. 5, in the semiconductor element modules 12W1 and 12W2, the first terminal M1, which forms a positive DC terminal, is represented as “P”, the second terminal M2, which forms a negative DC terminal, is represented as “N”, and the third terminal M3, which forms an AC terminal, is represented as “AC”.

[0038] In Fig. In Figure 5, the semiconductor module units 12W1 and 12W2 are arranged such that the positive DC terminals P of semiconductor module unit 12W1 and the AC terminals AC of semiconductor module unit 12W2 are opposite each other. Semiconductor module units 12W1 and 12W2 are same-phase semiconductor module units. This means that the positive DC terminals P of one of the two semiconductor module units defining the same-phase semiconductor module units are opposite each other with the AC terminals AC of the other of these two semiconductor module units. Fig. Except where the representations of the U-phase and V-phase semiconductor element modules are omitted, these U-phase and V-phase semiconductor element modules are arranged in the same way as the W-phase semiconductor element modules. For example, a W-phase semiconductor element module group is defined by the W-phase semiconductor element modules 12W1 and 12W2, and a U-phase semiconductor element module group and a V-phase semiconductor element module group are defined as in the W-phase semiconductor element module group. The two semiconductor element modules of each of the U-phase and V-phase semiconductor element module groups are arranged in the X-axis direction, which is the same direction as the arrangement of the semiconductor element modules 12W1 and 12W2. The U-phase semiconductor element module group and the V-phase semiconductor element module group are arranged perpendicular to the direction of the arrangement of the semiconductor element modules 12W1 and 12W2 in the Y-axis direction.

[0039] Fig. Figure 6 schematically represents a state in which the positive DC terminals P of the semiconductor element modules 12W1 and 12W2 are electrically connected to each other by a conductor element 44, the negative DC terminals N of the semiconductor element modules 12W1 and 12W2 are electrically connected to each other by the conductor element 44, and the AC terminals AC of the semiconductor element modules 12W1 and 12W2 are electrically connected to each other by the conductor element 44. The conductor element 44 is formed in the form of a flat plate. An example of the conductor element 44 is a laminated busbar. An insulating barrier 45 is formed on the conductor element 44, extending in a direction perpendicular to the direction of extension of the conductor element 44. The insulating barrier 45 is formed in the form of a flat plate. As shown in the Fig. 6 and Fig. As shown in Figure 7, the insulating barrier 45 is positioned between the positive DC terminals P of the semiconductor module 12W1 and the AC terminals AC of the semiconductor module 12W2 and is arranged to block a line of sight between these terminals. Any type of material can be used for the insulating barrier 45, as long as the material is insulating. In a case where a laminated busbar is used as the conductor element 44 and the type of material for the insulating barrier 45 is laminated, it is possible to form the insulating barrier 45 integrally with the conductor element 44. The insulating barrier 45 is not limited to having a flat plate shape as shown in Figure 7. Fig. Figure 6 shows the insulating separation 45, which can be used with any shape.

[0040] In Fig. 6. The insulating barrier 45 is arranged at any position in the X-axis direction of the conductor element 44. This means that the insulating barrier 45 can be arranged at any position between the semiconductor element module 12W1 and the semiconductor element module 12W2. It is necessary that the length L1 of the insulating barrier 45 in the Z-axis direction be greater than the thickness of the positive DC terminal P in the Z-axis direction and the thickness of the AC terminal AC in the Z-axis direction. The insulating barrier 45 does not have to extend in one direction at an angle of 90 degrees relative to the direction of extension of the conductor element 44, but can be inclined relative to the direction of extension of the conductor element 44. Fig. 7 it is necessary that a length of the insulating separation 45 in a depth direction, that is, in a length L2 along the short side direction of the semiconductor element modules 12W1 and 12W2, is so large that the positive DC terminals P and the AC terminals cannot be seen directly from each other.

[0041] In an application of the power converter device for driving a rail vehicle, the positive DC terminals P of the semiconductor module 12W1 are the main terminals, onto which a positive potential, representing a first potential output through the filter capacitor 10, is applied. In contrast, the AC terminals AC of the semiconductor module 12W2 are the main terminals, onto which the positive potential of the filter capacitor 10 and a negative potential, representing a second potential output through the filter capacitor 10, are appropriately applied depending on whether one switching element or the other switching element forming a switching element pair is switched on or off. Therefore, the positive DC terminals P and the AC terminals are related to each other in such a way that a high-voltage potential difference can occur between them.In the following descriptions, the terminals between which a high-voltage potential difference can occur are sometimes referred to as "high-voltage differential potential terminals." One of the high-voltage differential potential terminals is sometimes referred to as the "first main terminal," while the other is sometimes referred to as the "second main terminal." One of the semiconductor element modules, corresponding to semiconductor element module 12W1, is sometimes referred to as the "first semiconductor element module," while the other semiconductor element module, corresponding to semiconductor element module 12W2, is sometimes referred to as the "second semiconductor element module." The negative DC terminals N and the AC terminals AC also have a relationship that is referred to as the high-voltage differential potential terminals.The positive DC terminals P and the negative DC terminals N also have a ratio that is referred to as the high-voltage differential potential terminals.

[0042] Next, a description regarding the Fig. 8, which concerns making the distance between the semiconductor element modules smaller than an insulation distance due to the conducting element according to the first embodiment. In Fig. Figure 8 shows a cross-section between the positive DC terminal P and the AC terminal in the horizontal direction, enlarged. Regarding the reference symbols in Fig. The meaning of 8 is as follows.

[0043] a1: Distance between the positive DC terminal P of the semiconductor module 12W1 and the top of the insulating barrier 45 a2: Distance between the AC terminal of the semiconductor module 12W2 and the top of the insulating barrier 45 b: Height of the insulating separation 45 measured from the main surfaces of the semiconductor element modules 12W1 and 12W2 c1: Distance along the conductor element 44 between the edge of the positive DC terminal P and the base section of the insulating separation 45 c2: Distance along the conductor element 44 between the edge of the AC terminal and the base section of the insulating separation 45 e1: Distance between semiconductor element module 12W1 and semiconductor element module 12W2

[0044] Additional explanations are given regarding the preceding descriptions. The main surfaces of the semiconductor element modules 12W1 and 12W2 are electrode mounting surfaces of the semiconductor element modules 12W1 and 12W2. The base section of the insulating barrier 45 is a section of the conductor element 44 on which the insulating barrier 45 is mounted. As in Fig. As shown in Figure 6, when the insulating separation 45 is formed, “a1+a2” is the shortest distance between the positive DC terminal P of semiconductor module 12W1 and the AC terminal AC of semiconductor module 12W2. Therefore, by setting the value of “a1+a2” to be equal to or greater than the isolation distance defined in IEC 60077-1, it is possible to ensure that the isolation complies with IEC 60077-1. The distances e1, c1, and c2 have the ratio “e1=c1+c2”. The distance e1 is hereby referred to as the “module-to-module distance”.

[0045] As from Fig. 8 is understood to be where the length L1 of the insulating separation is 45, which is in Fig. 6, defined as being greater than the thickness of the positive DC terminal P and the thickness of the AC terminal AC, is the ratio “a1+a2>c1+c2”. This ratio indicates that the module-to-module distance e1 is shorter than the insulation distance a1+a2. The statement “the length L1 of the insulating separation 45 is greater than the thickness of the positive DC terminal P and the thickness of the AC terminal AC” is again expressed as the statement that the height b of the insulating separation 45, which is defined in Fig. 8 is expressed as is defined as “b>0”.

[0046] Next, specific examples will be explained. The following examples describe calculated values ​​obtained when the value of "a1+a2" is set as the insulation distance. <Festsetzungsbeispiel 1> (Conditions) • Insulation distance a1+a2: 40 mm • Height b of the insulating separation 45: 10 mm • Position of the insulating separation 45: Center between the positive DC terminal P and the AC terminal (calculated values) • Module-to-module distance e1: 34.6 mm • Shrinkage rate k1: 0.87 <Festsetzungsbeispiel 2> (Conditions) • Insulation distance a1+a2: 40 mm • Length of a1 of the insulation distance: 25 mm • Length of a2 of the insulation distance: 15 mm • Height b of the insulating separation 45: 10 mm (Calculated values) • Module-to-module distance e1: 34.1 mm • Length of c1 of the module-to-module distance: 22.9 mm • Length of c2 of the module-to-module distance: 11.2 mm • Shrinkage rate k1: 0.85

[0047] The reduction rate k1 of the preceding calculated values ​​is a value calculated using the equation k=e1 / (a1+a2). The reduction rate k1 indicates how much the module-to-module distance is reduced relative to the isolation distance. A smaller value for the reduction rate k1 indicates a greater reduction effect.

[0048] It can be understood from the calculation results in fixing examples 1 and 2, which have been described above, that a greater reduction effect is produced when the insulating separation 45 is arranged away from the center between the positive DC terminal P and the AC terminal than when the insulating separation 45 is arranged in the center.

[0049] Next, the calculation results obtained when the insulating separation 45 is arranged in contact with a side section 33b of the semiconductor element module 12W1, as shown in Fig. 9 is shown. <Festsetzungsbeispiel 3> (Conditions) • Insulation distance a1+a2: 40 mm • Length of a1 of the insulation distance: 10 mm • Length of a2 of the insulation distance: 30 mm • Height b of the insulating separation 45: 10 mm • Position of the insulating separation 45: Left end of the distance between the positive DC terminal P and the AC terminal AC (Calculated values) • Module-to-module distance e2: 28.3 mm • Shrinkage rate k1: 0.71

[0050] It is understood from the calculated values ​​in the fixed examples 1 to 3 that the value of the reduction rate k1 decreases when the insulating partition 45 is located closer to side section 33b of the semiconductor module 12W1 or to side section 33c of the semiconductor module 12W2. However, in practice, it is necessary to consider factors such as dimensional accuracy in the manufacture of the insulating partition 45 and an insulating effect created by air space between the insulating partition 45 and the module housing. Each of the fixed examples 1 to 3 provides an effect of reducing the module-to-module distance relative to the insulating distance.Therefore, it is considered preferable that the position of the insulating separation 45 be determined taking into account factors such as dimensional accuracy in the manufacture of the insulating separation 45 and a required isolation distance.

[0051] The following are calculated values ​​obtained when the height b of the insulating barrier 45 is increased from the height b specified in specification examples 1 to 3. In the following calculation examples, the height b of the insulating barrier 45 is changed from "10 mm" to "12 mm" under the conditions of specification examples 1 to 3 described above. <Festsetzungsbeispiel 4> (Conditions) • Insulation distance a1+a2: 40 mm • Height b of the insulating separation 45: 12 mm • Position of the insulating separation 45: Center between the positive DC terminal P and the AC terminal AC (Calculated values) • Module-to-module distance e1: 32.0 mm • Shrinkage rate k1: 0.80 <Festsetzungsbeispiel 5> (Conditions) • Insulation distance a1+a2: 40 mm • Length of a1 of the insulation distance: 25 mm • Length of a2 of the insulation distance: 15 mm • Height b of the insulating separation 45: 12 mm (Calculated values) • Module-to-module distance e1: 30.9 mm • Length of c1 of the module-to-module distance: 21.9 mm • Length of c2 of the module-to-module distance: 9.0 mm • Shrinkage rate k1: 0.77 <Festsetzungsbeispiel 6> (Conditions) • Insulation distance a1+a2: 40 mm • Length of a1 of the insulation distance: 12 mm • Length of a2 of the insulation distance: 28 mm • Height b of the insulating separation 45: 12 mm • Position of the insulating separation 45: Left end of the gap between the positive DC terminal P and the AC terminal AC (Calculated values) • Module-to-module distance e2: 25.3 mm • Shrinkage rate k1: 0.63

[0052] Based on the calculation results in the setting examples 1 to 6, a reduction rate k2 is calculated under the same conditions when the height b of the insulating separation 45 was changed from "10 mm" to "12 mm". The following results were then obtained. • Comparison between setting example 1 and setting example 4: k2=0.80 / 0.87-0.92 • Comparison between setting example 2 and setting example 5: k2=0.77 / 0.85-0.91 • Comparison between setting example 3 and setting example 6: k2=0.63 / 0.71-0.89

[0053] The preceding results indicate that an effect of approximately 10% reduction is achieved by increasing the height b of the insulating separation 45 by only 2 mm. Therefore, increasing the height b of the insulating separation 45 is considered effective in reducing the module-to-module distance. The preceding fixing examples are merely an illustration. The height of the insulating separation 45 is not limited to the height specified in the fixing examples.

[0054] As described above, it is possible to reduce the size of the power converter device because the use of the conductor element according to the first embodiment makes the distance between the main terminals of the semiconductor element modules smaller than an insulation distance. Second embodiment

[0055] Next, configurations of relevant parts of a conductor element according to a second embodiment will be described with reference to the Fig. 10 and Fig. 11 described. Fig. Figure 10 shows a diagram used to explain the effects of the conductor element according to the second embodiment. Fig. Figure 11 shows a diagram used to explain the effects of a conductor element different from the conductor element in Fig. 10 is used.

[0056] In the first embodiment, a single insulating separation 45 is formed in a direction perpendicular to the direction of extension of the conductor element 44. The second embodiment differs in structure from the first embodiment in that two insulating separations 45A and 45B are formed, as shown in Fig. 10 shown. Fig. 11 the insulating separation 45A is arranged along the side section 33b of the semiconductor element module 12W1, while the insulating separation 45B is arranged along the side section 33c of the semiconductor element module 12W2.

[0057] What is indicated by the reference symbols in Fig. The meaning of 10 and 11 is as follows. To simplify the calculation, the Fig. Figure 10 shows an example in which the insulating separation 45A and 45B are arranged symmetrically around a center line K2 that extends between the semiconductor element module 12W1 and the semiconductor element module 12W2.

[0058] a1: Distance between the top of the insulating barrier 45A and the top of the insulating barrier 45B a2: Distance between the positive DC terminal P of the semiconductor module 12W1 and the top of the insulating barrier 45A and the distance between the AC terminal AC of the semiconductor module 12W2 and the top of the insulating barrier 45B b: Height of each of the insulating separations 45A and 45B measured from the main surface of the corresponding semiconductor element modules 12W1 and 12W2 c: Distance along the conductor element 44 between the edge of the positive DC terminal P and the base section of the insulating separation 45A and distance of the conductor element 44 between the edge of the AC terminal AC and the base section of the insulating separation 45B e3: Module-to-module distance The module-to-module distance e3, the distance a1 and the distance c have the ratio “e3=a1+2×c” among themselves.

[0059] Next, specific calculation values ​​are shown below, obtained when an insulation distance is set to the value of "a1+2×a2". The reduction rate k1, shown below, is a value calculated using the equation k=e3 / (a1+2×a2). <Festsetzungsbeispiel 7> (Conditions) • Insulation distance a1+2×a2: 40 mm • Length of a1 of the insulation distance: 10 mm • Length of a2 of the insulation distance: 15 mm • Height b of each of the insulating separations 45A and 45B: 5 mm (Calculated values) • Module-to-module distance e3: 38.3 mm • Length of c of the module-to-module distance: 14.15 mm • Reduction rate k1: 0.84 <Festsetzungsbeispiel 8> (Conditions) • Insulation distance a1+2×a2: 40 mm • Length of a1 of the insulation distance: 10 mm • Length of a2 of the insulation distance: 15 mm • Height b of each of the insulating separations 45A and 45B: 10 mm (Calculated values) • Module-to-module distance e3: 32.4 mm • Length of c of the module-to-module distance: 11.2 mm • Reduction rate k1: 0.81 <Festsetzungsbeispiel 9> (Conditions) • Insulation distance a1+2×a2: 40 mm • Length of a1 of the insulation distance: 30 mm • Length of a2 of the insulation distance: 5 mm • Height b of each of the insulating separations 45A and 45B: 5 mm • Position of the insulating break 45A: Left end of the gap between the positive DC terminal P and the AC terminal • Position of the insulating partition 45B: Right end of the space between the positive DC connection P and AC connection (calculation values) • Module-to-module distance e4: 30.0 mm • Reduction rate k1: 0.75 <Festsetzungsbeispiel 10> (Conditions) • Insulation distance a1+2×a2: 40 mm • Length of a1 of the insulation distance: 10 mm • Length of a2 of the insulation distance: 15 mm • Height b of the insulating separations 45A and 45B: 10 mm • Position of the insulating break 45A: Left end of the gap between the positive DC terminal P and the AC terminal • Position of the insulating partition 45B: Right end of the space between the positive DC connection P and AC connection (calculation values) • Module-to-module distance e4: 20.0 mm • Reduction rate k1: 0.5

[0060] The calculation results in fixing examples 7 and 8 and fixing examples 9 and 10, described above, show that an increase in the height b in the insulating separations 45A and 45B produces a greater reduction effect. The calculation results in fixing examples 7 and 9 and fixing examples 8 and 10, described above, show a greater reduction effect achieved by moving the location of the insulating separation 45A closer to side section 33b of the semiconductor element module 12W1, and the location of the insulating separation 45B closer to side section 33c of the semiconductor element module 12W2. These effects are identical to those of the first embodiment.

[0061] Furthermore, a comparison between the calculation results in fixing example 1 according to the first embodiment and the calculation results in fixing example 8 according to the second embodiment, and a comparison between the calculation results in fixing example 3 according to the first embodiment and the calculation results in fixing example 10 according to the second embodiment, reveals that a greater reduction effect can be achieved by increasing the number of insulating separations.

[0062] Note that the first and second embodiments described above describe an application of the conductor element to the semiconductor element modules 12, which are integrated into the three-phase inverter circuit as shown in Fig. 1 and Fig.2 was used; however, the application of the conductor element is not limited to this. The conductor element is applicable to a power converter device using at least two semiconductor element modules. Examples of the power converter device as described above can include a half-bridge inverter circuit, a single-phase inverter circuit, a chopper circuit, a single-phase converter circuit, and a three-phase converter circuit. Reference symbol list

[0063] 2 Input circuit, 3, 3A Inverter circuit, 4a1, 4a2, 4b1, 4b2, 5a1, 5a2, 5b1, 5b2, 6a1, 6a2, 6b1, 6b2 Switching element, 7 Control unit, 8 Motor, 10 Filter capacitor, 11P Positive bus strip, 11N Negative bus strip, 12, 12U1, 12U2, 12V1, 12V2, 12W1, 12W2 Semiconductor module, 30 Pack, 32P, 32N, 32AC Mounting point, 34 Short side section, 33a, 35a, 36a, 37a Side, 33b, 33c Side section, 35, 37, 40 Electrode, 36 Base section, 44 Conductor element, 45, 45A, 45B insulating separation, 50 overhead line, 51 current collector, 52 rail, 53 wheel, AC alternating current connection, N negative DC connection, P positive DC connection.

Claims

[1] Power converter device comprising a first semiconductor element module (12W1), a second semiconductor element module (12W2) and a conduction element (44), wherein the second semiconductor element module (12W1) is different from the first semiconductor element module (12W2), and wherein the first semiconductor element module (12W1) and the second semiconductor element module (12W2) each have a first main terminal and a second main terminal, and wherein the first semiconductor element module (12W1) and the second semiconductor element module (12W2) are arranged along a predetermined direction (X) towards each other and at a distance (e1, e2, e3, e4) from each other, forming a gap between the first semiconductor element module (12W1) and the second semiconductor element module (12W2), and wherein the conducting element (44) extends in the specified direction (X) and electrically connects the first main terminal of the first semiconductor element module (12W1) to the first main terminal of the second semiconductor element module (12W2), and the conducting element (44) electrically connects the second main terminal of the first semiconductor element module (12W1) to the second main terminal of the second semiconductor element module (12W2), wherein a first potential is applied to each first main terminal, and wherein a second potential is applied to each second main terminal, the second potential being different from the first potential, and wherein the first main terminal of the first semiconductor element module (12W1) and the second main terminal of the second semiconductor element module (12W2) are arranged opposite each other, and wherein the conducting element has an insulating separation (45, 45A, 45B) formed on the conducting element (44), wherein the insulating separation (45, 45A, 45B) is upright and extends from the conducting element (44) into the space between the first semiconductor element module (12W1) and the second semiconductor element module (12W2), wherein a height of the insulating separation in the space exceeds the height of the thicknesses of the first main terminal of the first semiconductor element module (12W1) and the second main terminal of the second semiconductor element module (12W2) by a predetermined height (b), and wherein the insulating separation (45; 45A, 45B) Line of sight between the first main terminal of the first semiconductor module (12W1) and the second main terminal of the second semiconductor module (12W2) is blocked. [2] Power converter device according to claim 1, wherein the isolating separation (45A, 45B) is a plurality in number. [3] Power converter device according to claim 1 or 2, wherein the first main terminal of the first semiconductor element module (12W1) is a positive DC terminal (P), and wherein the second main terminal of the second semiconductor element module (12W2) is an AC terminal (AC). [4] Power converter device according to claim 1 or 2, wherein the first main terminal of the first semiconductor element module is a positive DC terminal, and wherein the second main terminal of the second semiconductor element module is a negative DC terminal. [5] Power converter device according to claim 1 or 2, wherein the first main terminal of the first semiconductor element module is an AC terminal, and wherein the second main terminal of the second semiconductor element module is a negative DC terminal.

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