Image pickup element, stacked image pickup element, and solid-state image pickup device

Abstract

Image recording element (10), comprising: a photoelectric conversion section including a first electrode (21), a photoelectric conversion layer (23A) and a second electrode (22) stacked on each other, wherein an oxide film (23B) and an oxide semiconductor layer (23C) are formed immediately below the photoelectric conversion layer (23A) from one side of the photoelectric conversion layer (23A), and a value Conc H-1 a concentration of hydrogen atoms in a region of the oxide semiconductor layer (23C) near an interface between the oxide film (23B) and the oxide semiconductor layer (23C) is higher than a value Conc H-2 a concentration of hydrogen atoms in a central region of the oxide semiconductor layer (23C) along a thickness direction.

Description

[Technical field]

[0001] The present disclosure relates to an image pickup element, a stacked image pickup element, and a solid-state image pickup device. [Background technology]

[0002] As image pickup elements included in an image sensor or the like, stacked image pickup elements have gained attention. The stacked image pickup element has a structure in which a photoelectric conversion layer (light-receiving layer) is sandwiched between two electrodes. The stacked image pickup element requires a structure to store and transfer a signal charge generated in the photoelectric conversion layer based on photoelectric conversion. Known structures require a structure in which a signal charge is stored in and transferred to an FD (floating drain) electrode, and also require high-speed transfer sufficient to prevent delay of the signal charge.

[0003] An image pickup element (photoelectric conversion element) for solving such problems is disclosed in, for example, Japanese Patent Laid-Open No. JP 2016-063165 A. This image pickup element comprises a storage electrode formed on a first insulating layer, a second insulating layer formed on the storage electrode, a semiconductor layer formed over the storage electrode and the second insulating layer, a collecting electrode formed in contact with the semiconductor layer but away from the storage electrode, a photoelectric conversion layer formed on the semiconductor layer, and an upper electrode formed on the photoelectric conversion layer.

[0004] An image pickup element in which an organic semiconductor material is used as a photoelectric conversion layer can photoelectrically convert a specific color (wavelength band). Due to such a feature, in a case where such an image pickup element is used as an image pickup element in a solid-state image pickup device, a structure (stacked image pickup element) with stacked subpixels can be obtained, in which the subpixels each include a combination of an on-chip color filter layer (OCCF) and an image pickup element and are arranged two-dimensionally (for example, Japanese Patent Laid-Open No. 2011-138927 A); such a structure cannot be achieved in conventional solid-state image pickup devices. Accordingly, since the image pickup element does not require demosaicing processing, there is an advantage in that possible false colors do not occur.In the following description, an image pickup element having a photoelectric conversion section provided on or above a semiconductor substrate may be referred to as a "first-type image pickup element" for convenience. The photoelectric conversion section included in the first-type image pickup element may be referred to as a "first-type photoelectric conversion section" for convenience. An image pickup element provided in the semiconductor substrate may be referred to as a "second-type image pickup element" for convenience. A photoelectric conversion section included in the second-type image pickup element may be referred to as a "second-type photoelectric conversion section" for convenience.

[0005] Fig. 51 shows a configuration example of a known stacked image pickup element (stacked solid-state image pickup device). In a Fig. In the example shown in Fig. 51, a third photoelectric conversion section 343A and a second photoelectric conversion section 341A corresponding to second-type photoelectric conversion sections included in a third image pickup element 343 and a second image pickup element 341 corresponding to second-type image pickup elements are stacked and formed in a semiconductor substrate 370. Furthermore, a first photoelectric conversion section 310A corresponding to a first-type photoelectric conversion section is disposed above the semiconductor substrate 370 (specifically, above the second image pickup element 341). Here, the first photoelectric conversion section 310A includes a first electrode 321, a photoelectric conversion layer 323 containing an organic material, and a second electrode 322, and constitutes a first image pickup element 310 corresponding to a first-type image pickup element.The second photoelectric conversion section 341A and the third photoelectric conversion section 343A photoelectrically convert, for example, blue light and red light, respectively, based on a difference in absorption coefficient. Furthermore, the first photoelectric conversion section 310A photoelectrically converts, for example, green light.

[0006] Charge generated by photoelectric conversion in the second photoelectric conversion section 341A and the third photoelectric conversion section 343A is temporarily stored in the second photoelectric conversion section 341A and the third photoelectric conversion section 343A, and then transferred to a second floating diffusion layer FD2 and a third floating diffusion layer FD3, respectively, through a vertical transistor (a gate region 345 is shown) and a transfer transistor (a gate region 346 is shown). The charge is further output to an external readout circuit (not shown). The transistors and the floating diffusion layers FD2 and FD3 are also formed in the semiconductor substrate 370.

[0007] Charge generated by photoelectric conversion in the first photoelectric conversion section 310A is stored in a first floating diffusion layer FD1 formed in the semiconductor substrate 370 via a contact hole region 361 and an interconnection layer 362. Furthermore, the first photoelectric conversion section 310A is connected to a gate region 352 of an amplification transistor that converts an amount of charge into a voltage via the contact hole region 361 and the interconnection layer 362. Furthermore, the first floating diffusion layer FD1 forms part of a reset transistor (a gate region 351 is shown). Numeral 371 denotes an element isolation region. Numeral 372 denotes a film of an insulating material formed on a front surface of the semiconductor substrate 370. Numerals 376 and 381 denote interlayer insulating layers.Reference numeral 383 denotes a layer of protective material. Reference numeral 314 denotes an on-chip microlens.

[0008] The document US 2015 / 0 188 065 A1 relates to a semiconductor component. The semiconductor component comprises a functional layer between a first electrode and a second electrode, wherein the functional layer comprises an organic film, wherein the first electrode and the second electrode are made of the same transparent conductive material, and an oxygen quantity at an interface on the functional layer side of the first electrode is smaller than an oxygen quantity at an interface on the functional layer side of the second electrode.

[0009] The publication WALLINGA, J. [et al.]: Reduction of Tin Oxide by Hydrogen Radicals. In: J. Phys. Chem. B, 1998, pp. 6219-6224 describes the effect of a reducing hydrogen environment on textured tin oxide thin films on glass substrates. The hydrogen treatments were carried out at 230 and 430 °C using hot wire (HW) and RF plasma-decomposed hydrogen with pure H2 as the source gas. These treatments simulate the possible reduction of the substrate during the deposition of a-Si:H for solar cells. [Citation list][Patent literature] [PTL 1] Japanese Patent Laid-Open JP 2016-063 165 A [PTL 2] Japanese Patent Laid-Open JP 2011-138 927 A [Summary][Technical Problem]

[0010] Japanese Patent Laid-Open No. 2016-063165 A listed above refers to some materials contained in semiconductor layers. However, if a semiconductor layer includes an oxide semiconductor layer, when oxygen depletion occurs on or near a front surface of the oxide semiconductor layer (the surface in contact with the photoelectric conversion layer), a characteristic of the oxide semiconductor layer (for example, the characteristic evaluated using a threshold voltage) may fluctuate, deteriorating a charge transfer characteristic, resulting in reduced quality of captured images.

[0011] Therefore, an object of the present disclosure is to provide an image pickup element, a stacked image pickup element, and a solid-state image pickup device having excellent transfer characteristics for charge stored in a photoelectric conversion layer. [Solution to the problem]

[0012] To achieve the above-described object, an image pickup element of the present disclosure comprises: a photoelectric conversion section including a first electrode, a photoelectric conversion layer and a second electrode stacked on each other, wherein an oxide film and an oxide semiconductor layer are formed immediately below the photoelectric conversion layer from the side of the photoelectric conversion layer. A value Conc H-1a concentration of hydrogen atoms in a region of the oxide semiconductor layer near an interface between the oxide film and the oxide semiconductor layer is higher than a value Conc H-2 a concentration of hydrogen atoms in a central region of the oxide semiconductor layer along a thickness direction.

[0013] To achieve the above-described object, another image element of the present disclosure comprises a photoelectric conversion section including a first electrode, a photoelectric conversion layer and a second electrode stacked on each other, wherein an oxide film and an oxide semiconductor layer are formed immediately below the photoelectric conversion layer from the side of the photoelectric conversion layer. Assuming that Conc H-1denotes a value of the concentration of hydrogen atoms in a region of the oxide semiconductor layer near an interface between the oxide film and the oxide semiconductor layer and that Conc H-1 denotes a value of the concentration of atoms contained in the oxide film in the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer, is an average rate of change ΔConc H-1 by Conc H-1 towards the central region along the thickness direction of the oxide semiconductor layer is greater than an average change rate ΔConc M-1 by Conc H-1 towards the central region along the thickness direction of the oxide semiconductor layer.

[0014] A stacked image pickup element of the present disclosure for achieving the above-described object includes at least one image pickup element of the present disclosure described above.

[0015] A solid-state imaging device according to a first aspect of the present disclosure for achieving the above-described object includes a plurality of the above-described image pickup elements of the present disclosure. Furthermore, a solid-state imaging device according to a second aspect of the present disclosure for achieving the above-described object includes a plurality of the above-described stacked image pickup elements of the present disclosure. [brief description of the drawings] [ Fig. 1] Fig. 1 is a schematic cross-sectional view of a part of an image pickup element of an embodiment 1 (two adjacent image pickup elements). [ Fig. 2] Fig. 2 is a schematic partial cross-sectional view of the image pickup element and a stacked image pickup element of Embodiment 1. [ Fig. 3] Fig. 3 is an equivalent circuit diagram of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 4] Fig. 4 is an equivalent circuit diagram of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 5] Fig. 5 is a schematic layout diagram of a first electrode and a charge storage electrode included in the image pickup element of Embodiment 1, and transistors included in a control section. [ Fig. 6] Fig. 6 is a diagram schematically illustrating the state of potentials at respective sections during operation of the image pickup element of Embodiment 1. [ Fig. 7] Fig. 7A and Fig. 7B are equivalent circuit diagrams of the image pickup elements and the stacked image pickup elements of Embodiments 1 and 5 to show the respective sections in Fig. 6 (Embodiment 1) and Fig. 21 and Fig. 22 (Embodiment 5). [ Fig. 8] Fig. 8 is a conceptual diagram of a solid-state image pickup device of Embodiment 1. [ Fig. 9] Fig. 9 is an equivalent circuit diagram of a modified example of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 10] Fig. 10 is a schematic layout diagram of a first electrode and a charge storage electrode used in another modified example of the image pickup element of Embodiment 1 shown in Fig. 9, and transistors included in a control section. [ Fig. 11] Fig. 11 is a schematic layout diagram of still another modified example of the first electrode and the charge storage electrode included in the image pickup element of Embodiment 1. [ Fig. 12] Fig. 12 is a schematic partial cross-sectional view of an image pickup element and a stacked image pickup element of Embodiment 3. [ Fig. 13] Fig. 13 is a schematic partial cross-sectional view of an image pickup element and a stacked image pickup element of an embodiment 4. [ Fig. 14] Fig. 14 is a schematic partial cross-sectional view of a modified example of the image pickup element and the stacked image pickup element of Embodiment 4. [ Fig. 15] Fig. 15 is a schematic partial cross-sectional view of another modified example of the image pickup element of Embodiment 4. [ Fig. 16] Fig. 16 is a schematic partial cross-sectional view of still another modified example of the image pickup element of Embodiment 4. [ Fig. 17] Fig. 17 is a schematic partial cross-sectional view of a part of an image pickup element and a stacked image pickup element of Embodiment 5. [ Fig. 18] Fig. 18 is an equivalent circuit diagram of the image pickup element and the stacked image pickup element of Embodiment 5. [ Fig. 19] Fig. 19 is an equivalent circuit diagram of the image pickup element and the stacked image pickup element of Embodiment 5. [ Fig. 20] Fig. 20 is a schematic layout diagram of a first electrode, a transfer control electrode, and a charge storage electrode included in the image pickup element of Embodiment 5, and transistors included in a control section. [ Fig. 21] Fig. 21 is a diagram schematically illustrating the state of potentials at respective sections during operation of the image pickup element of Embodiment 5. [ Fig. 22] Fig. 22 is a diagram schematically illustrating the state of potentials at the respective sections during further operation of the image pickup element of Embodiment 5. [ Fig. 23] Fig. 23 is a schematic layout diagram of a first electrode, a transfer control electrode, and a charge storage electrode included in a modified example of the image pickup element of Embodiment 5, and transistors included in a control section. [ Fig. 24] Fig. 24 is a schematic partial cross-sectional view of a part of an image pickup element of an embodiment 6. [ Fig. 25] Fig. 25 is a schematic layout diagram of a first electrode, a charge storage electrode, and a charge emission electrode included in a photoelectric conversion section including a charge storage electrode in the image pickup element of Embodiment 6. [ Fig. 26] Fig. 26 is a schematic cross-sectional view of a part of an image pickup element of an embodiment 7 (two adjacent image pickup elements). [ Fig. 27] Fig. 27 is a schematic layout diagram of a first electrode, a charge storage electrode, and the like included in the image pickup element of Embodiment 7, and transistors included in a control section. [ Fig. 28] Fig. 28 is a schematic layout diagram of the first electrode, the charge storage electrode, and the like included in the image pickup element of Embodiment 7. [ Fig. 29] Fig. 29 is a schematic layout diagram of a modified example of the first electrode, the charge storage electrode, and the like included in the image pickup element of Embodiment 7. [ Fig. 30] Fig. 30 is a schematic layout diagram of a modified example of the first electrode, the charge storage electrode, and the like included in the image pickup element of Embodiment 7. [ Fig. 31] Fig. 31A and Fig. 31B are schematic layout diagrams of modified examples of the first electrode, the charge storage electrode, and the like included in the image pickup element of Embodiment 7. [ Fig. 32] Fig. 32 is a schematic cross-sectional view of a part of an image pickup element of an embodiment 8 (two adjacent image pickup elements). [ Fig. 33] Fig. 33A and Fig. 33B are schematic cross-sectional views of parts of modified examples of the image pickup element of Embodiment 8 (two adjacent image pickup elements). [ Fig. 34] Fig. 34 is a schematic plan view of a part of the image pickup element of Embodiment 8 (2 × 2 adjacent image pickup elements). [ Fig. 35] Fig. 35 is a schematic plan view of a part of a modified example of the image pickup element of Embodiment 8 (2 × 2 adjacent image pickup elements). [ Fig. 36] Fig. 36A and Fig. 36B are schematic cross-sectional views of parts of modified examples of the image pickup element of Embodiment 8 (two adjacent image pickup elements). [ Fig. 37] Fig. 37A and Fig. 37B are schematic plan views of parts of modified examples of the image pickup element of Embodiment 8. [ Fig. 38] Fig. 38A and Fig. 38B are schematic plan views of parts of modified examples of the image pickup element of Embodiment 8. [ Fig. 39] Fig. 39 is a schematic partial cross-sectional view of still another modified example of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 40] Fig. 40 is a schematic partial cross-sectional view of another modified example of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 41] Fig. 41 is a schematic partial cross-sectional view of another modified example of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 42] Fig. 42 is a schematic partial cross-sectional view of another modified example of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 43] Fig. 43 is a schematic partial cross-sectional view of another modified example of the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 44] Fig. 44 is a schematic partial cross-sectional view of a part of still another modified example of the image pickup element and the stacked image pickup element of Embodiment 4. [ Fig. 45] Fig. 45 is a diagram schematically illustrating a relationship of various energy values in a stacked structure of a photoelectric conversion layer, an oxide film, and an oxide semiconductor layer in the image pickup element and the stacked image pickup element of Embodiment 1. [ Fig. 46] Fig. 46A and Fig. 46B are diagrams showing results of an investigation of effects of formation of the oxide film on the oxide semiconductor layer. [ Fig. 47] (A) of Fig. 47 and in (B) of Fig. 47 are diagrams illustrating a conceptual diagram including results of an investigation of effects in a case where no hydrogen termination occurs after the oxide film is formed on the oxide semiconductor layer and a cross section for the investigation of the effects, and (C) of Fig. 47 and (D) of Fig. 47 are diagrams showing a conceptual diagram including results of an investigation of effects in a case where hydrogen termination occurs after the oxide film is formed on the oxide semiconductor layer, and a cross section for the investigation of the effects. [ Fig. 48] Fig. 48 is a diagram showing an example of SIMS analysis results for the oxide film and the oxide semiconductor layer shown in (C) of Fig. 47 are shown. [ Fig. 49] (a) of Fig. 49 is a diagram illustrating prediction results based on a first-principle or ab initio calculation of an interface between the oxide semiconductor layer and the oxide film in which excess oxygen is present as an example of a defect site, and (b) of Fig. Figure 49 is a diagram showing prediction results, based on the ab initio calculation, of a state resulting from the addition of oxygen to a solution shown in (a) of Fig. 49 results in the state shown. [ Fig. 50] Fig. 50 is a conceptual diagram of an example using, for an electronic device (camera), a solid-state image pickup device including the image pickup element and the stacked image pickup element of the present disclosure. [ Fig. 51] Fig. 51 is a conceptual diagram of a known stacked image pickup element (stacked solid-state image pickup device). [ Fig. 52] Fig. 52 is a block diagram showing an example of a schematic configuration of a vehicle control system. [ Fig. 53] Fig. 53 is a diagram of assistance in explaining an example of installation positions of an outside-vehicle information detecting section and an imaging section. [ Fig. 54] Fig. 54 is a view showing an example of a schematic configuration of an endoscopic surgery system. [ Fig. 55] Fig. 55 is a block diagram showing an example of a functional configuration of a camera head and a camera control unit (CCU). [Description of embodiments]

[0016] With reference to the drawings, the present disclosure will be described below based on embodiments. However, the present disclosure is not limited to the embodiments, and various numerical values and materials in the embodiments are illustrative. The description will be given in the following order. 1. General description of an image pickup element of the present disclosure, a stacked image pickup element of the present disclosure, and solid-state image pickup devices according to first and second aspects of the present disclosure 2. Embodiment 1 (Image pickup element of the present disclosure, stacked image pickup element of the present disclosure, and solid-state image pickup device according to a second aspect of the present disclosure). 3. Embodiment 2 (Modification of Embodiment 1) 4. Embodiment 3 (Modification of Embodiments 1 and 2) 5. Embodiment 4 (Modification of Embodiments 1 to 3 and Solid-state Image Pickup Device According to a First Aspect of the Present Disclosure) 6. Embodiment 5 (Modification of Embodiments 1 to 4 and Image Pickup Element Including a Transfer Control Electrode) 7. Embodiment 6 (Modification of Embodiments 1 to 5 and Image Pickup Element Including a Charge Emission Electrode) 8. Embodiment 7 (Modification of Embodiments 1 to 6 and Image Pickup Element Including a Lower Charge Transfer Control Electrode) 9. Embodiment 8 (Modification of Embodiments 1 to 7 and Image Pickup Element Including an Upper Charge Transfer Control Electrode) 10. Miscellaneous <Allgemeine Beschreibung eines Bildaufnahmeelements der vorliegenden Offenbarung, eines gestapelten Bildaufnahmeelements der vorliegenden Offenbarung und von Festkörper-Bildaufnahmeeinrichtungen gemäß ersten und zweiten Aspekten der vorliegenden Offenbarung>

[0017] In an image pickup element of the present disclosure, an image pickup element of the present disclosure included in a stacked image pickup element of the present disclosure, and an image pickup element of the present disclosure included in solid-state image pickup devices according to first and second aspects of the present disclosure (these image pickup elements may be collectively referred to as “image pickup element and the like of the present disclosure” in some cases hereinafter), at least some of the elements included in an oxide film may be configured differently from elements included in an oxide semiconductor layer.

[0018] In the image pickup element and the like of the present disclosure including the above-described preferred configuration, when using a vacuum level based on a zero reference, an energy (value has a negative sign) is defined to have an absolute value that increases consistently with a deviation from the vacuum level, assuming that E2 has an energy average value at a maximum energy value (see “C” in Fig. 45) of a conduction band of an oxide semiconductor layer (the energy average value at the maximum energy value of the conduction band of the oxide semiconductor layer may hereinafter be referred to simply as “energy average value in the conduction band of the oxide semiconductor layer” in some cases) and that E1 has an energy average value at a maximum energy value (see “B” in Fig. 45) of a conduction band of an oxide film (the energy average value at the maximum energy value of the conduction band of the oxide film may in some cases be referred to as the “energy average value in the conduction band of the oxide film”) E1−E2≥0.4(eV), preferably E1−E2≥0(eV), preferred E1−E2≥0.1(eV) and even more preferred E1−E2>−0.1(eV) Furthermore, in this case, if E0 is an energy average value of a LUMO value (see “A” in Fig. 45) for a photoelectric conversion layer, E0−E1≥−0.4(eV), preferably E0−E1≥0(eV), preferred E0−E1≥0.1(eV) even more preferred E0−E1>0.1(eV) and furthermore E0≥E1≥E2 If the magnitude relationship is approximately (-0.4 eV) as described above, charge can be reliably migrated from, for example, the photoelectric conversion layer via the oxide film to the oxide semiconductor layer by optimizing potentials applied to a charge storage electrode and a second electrode to increase an electric field intensity applied to the photoelectric conversion layer. Furthermore, as described above, sufficiently thinning the oxide film allows charge to migrate based on a tunneling effect. Note that "minimal energy" means that the energy value has a minimum absolute value, and "maximum energy" means that the energy value has a maximum absolute value. This also applies similarly to the description below.

[0019] In the image pickup element and the like of the present disclosure including the above-described various preferred configurations, when using a vacuum level based on a zero reference, an energy (value has a negative sign) is defined to have an absolute value that increases consistently with a deviation from the vacuum level, assuming that E4 has an energy average value at a minimum energy value (see “E” in Fig. 45) of a valence band of an oxide film (the energy average value at the minimum energy value of the valence band of the oxide film may be referred to hereinafter in some cases simply as “energy average value in the valence band of the oxide film”) and that E3 has an energy average value at a HOMO value (see “D” in Fig. 45) for the photoelectric conversion layer, E3−E4≥−0.4(eV), preferably E3−E4≥0(eV), preferred E3−E4≥0.1(eV) and even more preferred E3−E4>−0.1(eV) Furthermore, in this case, assuming that E5 has an energy average value at a minimum energy value (see “F” in Fig. 45) of a valence band of an oxide semiconductor layer (the average energy value at the minimum energy value of the valence band of the oxide semiconductor layer may sometimes be referred to simply as the “average energy value in the valence band of the oxide semiconductor layer”) E4−E5≥−0.4(eV), preferably E4−E5≥0(eV), preferred E4−E5≥0.1(eV), even more preferred E4−E5≥0.1(eV) and furthermore E3≥E4≥E5 fulfilled.

[0020] The valence band energy and the HOMO value can be determined based on, for example, ultraviolet photoelectron spectroscopy (UPS). Furthermore, the conduction band energy and the LUMO value can be determined from {(valence band energy and HOMO value) + E b} can be determined. Furthermore, a band gap energy E b from an optically absorbed wavelength λ (wavelength of the optical absorption edge; unit is nm) based on the following equation. Eb=hν=h(c / λ)=1239.8 / λ[eV]

[0021] Furthermore, the image pickup element and the like of the present disclosure including the above-described various preferred configurations may be configured such that the material forming the oxide film contains a metal oxide, and in this case, such that the metal oxide contains at least one kind of element selected from the group consisting of tantalum (Ta), titanium (Ti), vanadium (V), niobium (Nb), tungsten (W), zirconium (Zr), hafnium (Hf), scandium (Sc), yttrium (Y), lanthanum (La), gallium (Ga), and magnesium (Mg).Further, the image pickup element and the like may be configured such that the oxide film contains an addition of at least one kind of element selected from the group consisting of silicon (Si), tantalum (Ta), vanadium (V), niobium (Nb), tungsten (W), zirconium (Zr), hafnium (Hf), scandium (Sc), yttrium (Y), lanthanum (La), gallium (Ga), magnesium (Mg), aluminum (Al), strontium (Sr), germanium (Ge), hydrogen (H), carbon (C), and nitrogen (N) (but the element is different from the element contained in the metal oxide). In this case, the oxide film preferably contains an addition of at least one kind of element selected from the group consisting of silicon (Si), niobium (Nb), tungsten (W), zirconium (Zr), aluminum (Al), carbon (C), and nitrogen (N) (but the element is different from the element contained in the metal oxide). Examples of an addition or addition method include:The addition rate of each of these additive elements may range from 0.33 atomic % to 16.7 atomic %; preferably from 0.54 atomic % to 14.3 atomic % and more preferably from 0.81 atomic % to 11.1 atomic %; but the addition rate is not limited thereto. Note that the total amount in atomic % of atoms (including oxygen atoms) contained in the metal oxide is 100 atomic %. Concretely, for example, in a case where the oxide film contains tantalum atoms, silicon atoms, and oxygen atoms, the total amount in atomic % of tantalum atoms contained in the oxide film, atomic % of silicon atoms contained in the oxide film, and atomic % of oxygen atoms contained in the oxide film is 100 atomic %. Adding any of these elements to the oxide film makes it possible to suppress crystallization of the oxide film during heat treatment in steps of manufacturing an image pickup member.Local crystallization of the oxide film may lead to leakage current originating from the locally crystallized region. However, such a potential problem can be prevented because an oxide film with a uniform amorphous structure can be obtained, thus allowing stabilization of a threshold voltage for the photoelectric conversion layer. As a result, the charge storage and transfer efficiency characteristics can be further improved, enabling the quality of a captured image to be enhanced. Furthermore, in these cases, the oxide film may have a thickness equal to or greater than one atomic layer, equal to 1 × 10. -7 m or smaller. Specific examples of metal oxide include Ta2O5, TiO2, V2O5, Nb2O5, W2O3, ZrO2, HfO2, Sc2O3, Y2O3, La2O3, Ga2O3, and MgO. Even an oxide film with a thickness equal to one atomic layer (approximately 0.15 nm) is sufficiently effective to stabilize the oxide semiconductor.

[0022] Alternatively, the image pickup element and the like including the various preferred configurations described above may be configured such that the oxide film includes a tunnel oxide film, and in this case, such that the tunnel oxide film includes at least one kind of material selected from the group consisting of SiO x , SiON, SiOC and AlO y and further in these cases such that the tunnel oxide film has a thickness equal to one atomic layer or greater than or equal to 5 × 10 -9 m or smaller.

[0023] Alternatively, the image pickup element and the like having the above-described various preferred configurations may be configured such that the oxide film comprises a stacked structure of a film containing a metal oxide and a tunnel oxide film, and in this case, such that the metal oxide contains at least one kind of an element selected from the group consisting of tantalum, titanium, vanadium, niobium, tungsten, zirconium, hafnium, scandium, yttrium, lanthanum, gallium, and magnesium, and further such that the film containing the metal oxide has a thickness equal to one atomic layer or greater than or equal to 1 × 10 -7 m or smaller. Further, in these cases, the image pickup element and the like may be configured such that the tunnel oxide film contains at least one type of material selected from the group consisting of SiO x , SiON, SiOC and AlO yand further such that in these cases the tunnel oxide film has a thickness equal to one atomic layer or greater than or equal to 5 × 10 -9 m or smaller.

[0024] The oxide semiconductor (hereinafter referred to as “constituent material of an oxide semiconductor layer”) corresponding to a material contained in the oxide semiconductor layer may be, for example, indium oxide, gallium oxide, zinc oxide, or tin oxide, or a material containing at least one kind of the oxides described above, or may be a material containing any of the materials described above with an addition of a dopant, specifically, for example, IGZO (indium gallium zinc oxide containing zinc oxide with an addition of indium and gallium as dopants), ITZO, IWZO, IWO, ZTO, an ITO-SiO x-based material (indium tin oxide mixed or doped with silicon oxide), GZO (gallium zinc oxide containing zinc oxide with an addition of gallium as a dopant), IGO (indium gallium oxide containing gallium oxide with an addition of indium as a dopant), ZnSnO3, AlZnO, GaZnO, or InZnO. In addition, the oxide semiconductor may be a material containing CuI, InSbO4, ZnMgO, CuInO2, MgIn2O4, CdO, or the like. However, no limitation to the materials described above is intended. Alternatively, in a case where a charge to be stored includes electrons, the constituent material of the oxide semiconductor layer may be a material having a higher ionization potential than the ionization potential of a material included in the photoelectric conversion layer (hereinafter referred to as “constituent material of a photoelectric conversion layer”).If a charge to be stored includes holes, the constituent material of the oxide semiconductor layer may be a material with a lower electron affinity than the electron affinity of the constituent material of the photoelectric conversion layer. Alternatively, the constituent material of the oxide semiconductor layer preferably has an impurity concentration of 1 × 10 18 cm -3 or less. The oxide semiconductor layer may have a single-layer configuration or a multi-layer configuration. The constituent material of the oxide semiconductor layer located above the charge storage electrode may be different from a constituent material of the oxide semiconductor layer located above a first electrode.

[0025] The image pickup element and the like including the various configurations and arrangements described above may be further configured to obtain an average value Conc H-1a concentration of hydrogen atoms in a region of the oxide semiconductor layer near an interface between the oxide film and the oxide semiconductor layer is higher than an average value Conc h-2 a concentration of hydrogen atoms in a central region of the oxide semiconductor layer along a thickness direction. In this case, preferably ConcH−1 / ConcH−2≥1.1 Alternatively, assuming that Conc H-1 is a value of the concentration of hydrogen atoms in the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer, and that Conc M-1 is a value of a concentration of atoms contained in the oxide film in the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer, an average change rate ΔConc H-1 by Conc H-1towards the central region along the thickness direction of the oxide semiconductor layer be greater than an average change rate ΔConc M-1 by Conc M-1 towards the central region along the thickness direction of the oxide semiconductor layer. The interface between the oxide film and the oxide semiconductor layer is, assuming that Conc M-Peak a peak value of a concentration of atoms in the oxide film contained in the oxide film is defined here as a region of the oxide film in which the atoms contained in the oxide film have a concentration value that is 10% of Conc M-PeakFurther, the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer refers to a region that is 10% or less of the thickness of the photoelectric conversion layer with respect to an interface between the oxide film and the photoelectric conversion layer (that is, the region corresponding to a range of 0% to 10% of the thickness of the photoelectric conversion layer), and the central region of the oxide semiconductor layer along the thickness direction refers to a region that is 40% to 60% of the thickness of the photoelectric conversion layer with respect to the interface between the oxide film and the photoelectric conversion layer (that is, the region corresponding to a range of 40% to 60% of the thickness of the photoelectric conversion layer).The concentration of hydrogen atoms and the concentration of atoms contained in the oxide film can be determined by, for example, a secondary ion mass spectrometry (SIMS) method using a secondary ion mass spectrometry device available from CAMEKA SAS or based on an energy dispersive X-ray spectroscopy (EDS) method. Furthermore, the average rate of change of the concentration of atoms in a specific region in the thickness direction (referred to as a "specific section" for convenience) can be determined by smoothing an analytical value of the atomic concentration value from a branch point to an end point of the specific section and dividing a value {(atomic concentration value at the end point obtained by smoothing) - (atomic concentration value at the branch point obtained by smoothing)} by (distance from the end point to the starting point).

[0026] The first electrode, the second electrode, the charge storage electrode and the photoelectric conversion layer are described in detail below.

[0027] The image pickup element and the like including the various preferred configurations and arrangements described above may further be configured such that a charge generated in the photoelectric conversion layer migrates to the first electrode via the oxide film and the oxide semiconductor layer, and in this case such that the charge includes electrons.

[0028] In the image pickup element and the like of the present disclosure, a characteristic of the material contained in the oxide film (hereinafter referred to as a "constituent material of the oxide film" in some cases), a characteristic of the constituent material of the photoelectric conversion layer, and a characteristic of the constituent material of the oxide semiconductor layer are defined, and the characteristic of the constituent material of the photoelectric conversion layer refers to a characteristic average value for the region of the photoelectric conversion layer close to the oxide film. The characteristic of the constituent material of the oxide film is an average value for the oxide film, and the characteristic of the constituent material of the oxide semiconductor layer is an average value for the oxide semiconductor layer.Specifically, the energy average values E1 and E2 for the conduction bands of the oxide film and the oxide semiconductor layer are average values for the oxide film and the oxide semiconductor layer. Furthermore, the energy average value E0 for the LUMO value for the photoelectric conversion layer is an average value for the region of the photoelectric conversion layer close to the oxide film. Similarly, the energy average values E4 and E5 for the valence bands of the oxide film and the oxide semiconductor layer are average values for the oxide film and the oxide semiconductor layer. Furthermore, the energy average value E3 for the HUMO value for the photoelectric conversion layer is an average value for the region of the photoelectric conversion layer close to the oxide film.The “region of the photoelectric conversion layer close to the oxide film” here refers to a region of the photoelectric conversion layer located in an area that is 10% or less of the thickness of the photoelectric conversion layer with respect to the interface between the oxide film and the photoelectric conversion layer (that is, the area corresponding to a range of 0% to 10% of the thickness of the photoelectric conversion layer).

[0029] The image pickup element and the like including the various preferred configurations and arrangements described above may further be configured such that the oxide semiconductor layer is amorphous (for example, the oxide semiconductor layer is amorphous and locally lacks a crystal structure). Whether the oxide semiconductor layer is amorphous or not can be determined based on X-ray diffraction analysis. However, the oxide semiconductor layer is not limited to being amorphous and may have a crystal structure or a polycrystal structure.

[0030] The image pickup element and the like including the above-described various preferred configurations and arrangements may further be configured such that the oxide semiconductor layer has a thickness of 1 × 10 -8 m to 1.5 × 10 -7 m, preferably 2 × 10 -8 m to 1.0 × 10 -7 m and preferably 3 × 10 -8 m to 1.0 × 10-7 m. The oxide semiconductor layer preferably has a carrier concentration (carrier density) of less than 1 × 10 16 / cm 3 , and this allows an increase in the amount of charge storage in the oxide semiconductor layer. Furthermore, the constituent material of the oxide semiconductor layer preferably has a carrier mobility of 10 cm 2 / V s or more, and this allows charge stored in the oxide semiconductor layer to migrate quickly to the first electrode.

[0031] The image pickup element and the like including the various preferred configurations and arrangements described above may be further configured such that Light from the second electrode is incident and a surface of the oxide semiconductor layer on the photoelectric conversion layer side (the surface of the oxide semiconductor layer at the interface between the oxide film and the oxide semiconductor layer; this also applies to the following description) has a surface roughness Ra of 1.5 nm or less and a root mean square roughness Rq of 2.5 nm or less. The surface roughness Ra and the roughness Rq are based on JIS B0601:2013. Such smoothness of the surface of the oxide semiconductor layer suppresses stray reflection at the surface of the oxide semiconductor layer and enables improvement of the bright current characteristic in photoelectric conversion. A surface of the charge storage electrode may have a surface roughness Ra of 1.5 nm or less and a root mean square roughness Rq of 2.5 nm or less.

[0032] In a Fig. In the conventional image pickup element shown in Fig. 51, a charge generated by photoelectric conversion in a second photoelectric conversion section 341A and a third photoelectric conversion section 343A is temporarily stored in the second photoelectric conversion section 341A and a third photoelectric conversion section 343A and then transferred to a second floating diffusion layer FD2 and a third floating diffusion layer FD3. Consequently, the second photoelectric conversion section 341A and the third photoelectric conversion section 343A can be completely depleted. However, a charge generated by photoelectric conversion in the first photoelectric conversion section 310A is directly stored in a first floating diffusion layer FD1. Thus, complete depletion of the first photoelectric conversion section 310A is difficult.As a result, kTC noise may become louder and random noise may become more severe, resulting in reduced quality of captured images.

[0033] In the image pickup element and the like of the present disclosure, in a case where the charge storage electrode arranged at a distance from the first electrode and arranged to oppose the oxide semiconductor layer via an insulating layer is provided, when the photoelectric conversion section is irradiated with light and performs photoelectric conversion, charge can be stored in the oxide semiconductor layer (in some cases, the oxide semiconductor layer and the photoelectric conversion layer, or the oxide semiconductor layer, the oxide film, and the photoelectric conversion layer). Consequently, when exposure is started, the charge storage section can be completely depleted to erase charge. As a result, it is possible to suppress a phenomenon in which kTC noise becomes louder, random noise becomes more serious, and quality of captured images is degraded.Note that in the following description, the oxide semiconductor layer or the oxide semiconductor layer and the photoelectric conversion layer or the oxide semiconductor layer, the oxide film and the photoelectric conversion layer may be referred to collectively as “oxide semiconductor layer and the like” in some cases.

[0034] The oxide semiconductor layer and the oxide film can be formed based on, for example, a physical vapor deposition (PVD) method, more concretely, for example, a sputtering method. More concretely, a sputtering method can be exemplified in which, for example, a parallel plate sputtering device, a DC magnetron sputtering device, or an RF sputtering device is used as the sputtering device, an argon (Ar) gas is used as the process gas, and a desired sintered body is used as the target. Alternatively, an atomic layer deposition (ALD) method can be exemplified as the method for forming the oxide film. However, the present disclosure is not limited to these film formation methods.

[0035] In a case where the oxide semiconductor layer is formed using the sputtering method, controlling the amount of oxygen gas introduced (the partial pressure of oxygen) allows the energy level of the oxide semiconductor layer to be controlled. Specifically, when the oxide semiconductor layer is formed using the sputtering method, the control can be based on the following. Partial pressure of oxygen = (pressure of O2 gas) / (total pressure of Ar gas and O2 gas)

[0036] The partial pressure of oxygen preferably ranges from 0.005 to 0.10. Furthermore, the image pickup element and the like of the present disclosure may be configured such that the oxygen content in the oxide semiconductor layer is less than the oxygen content of a stoichiometric composition. Here, the energy level of the oxide semiconductor layer can be controlled based on the oxygen content, and the energy level increases as the oxygen content decreases relative to the oxygen content of the stoichiometric composition, that is, as oxygen deficiency increases.

[0037] Examples of the image pickup element and the like of the present disclosure may include a CCD element, a CMOS image sensor, a CIS (Contact Image Sensor), and a CMD (Charge Modulation Device) type signal amplification image sensor. For example, the solid-state image pickup device according to the first and second aspects of the present disclosure and solid-state image pickup devices of a first and second configuration described below may be incorporated into a digital still camera, a video camera, a camcorder, a security camera, a vehicle-mounted camera, a smartphone camera, a game console user interface camera, or a biometric authentication camera. Embodiment 1

[0038] Embodiment 1 relates to the image pickup element of the present disclosure, the stacked image pickup element of the present disclosure, and the solid-state image pickup device according to the second aspect of the present disclosure. Fig. Fig. 1 is a schematic cross-sectional view of a part of an image pickup element and a stacked image pickup element of Embodiment 1 (hereinafter referred to as "image pickup element"). Note that, while Fig. 1 shows two image pickup elements lying next to each other, the schematic cross-sectional view in Fig. 1 is similar, for example, to a schematic cross-sectional view taken along an alternately long and short dashed line AA in Fig. 11 is taken. In addition, Fig. 2 is a schematic partial cross-sectional view of the image pickup element and the stacked image pickup element of Embodiment 1, Fig. 3 and Fig. 4 shows equivalent circuit diagrams of the image pickup element and the stacked image pickup element of the embodiment 1 and represents Fig. 5 is a schematic layout diagram of a first electrode and a charge storage electrode included in the image pickup element of Embodiment 1, and transistors included in a control section. Fig. 6 illustrates the state of potentials at respective sections during operation of the image pickup element of Embodiment 1, Fig. 7A is an equivalent circuit diagram of the image pickup element and stacked image pickup element of the embodiment 1 to show the respective sections in Fig. 6 and presents Fig. 8 is a conceptual diagram of a solid-state image pickup device of Embodiment 1. Note that various components of the image pickup element located under an interlayer insulating film 81 may be collectively denoted by a reference numeral 13 for convenience and ease of illustration.

[0039] An image pickup element 10 of Embodiment 1 includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22 stacked on top of each other. An oxide film 23B and an oxide semiconductor layer 23C are formed immediately below the photoelectric conversion layer 23A from the photoelectric conversion layer side. Here, in Embodiment 1, the oxide semiconductor layer 23C is in contact with the first electrode 21, the oxide semiconductor layer 23C and the oxide film 23B are in contact with each other, and the oxide film 23B is in contact with the photoelectric conversion section 23A.

[0040] The stacked image pickup element of Embodiment 1 includes at least one image pickup element 10 of Embodiment 1. In addition, the solid-state image pickup device of Embodiment 1 includes a plurality of the stacked image pickup elements 10 of Embodiment 1. For example, the solid-state image pickup device of Embodiment 1 is included in a digital still camera, a video camera, a camcorder, a security camera, a vehicle-mounted camera (in-vehicle camera), a camera of a smartphone, a user interface camera of a game console, or a camera for biometric authentication, or the like.

[0041] The oxide semiconductor layer 23C includes a region in contact with the first electrode 21, a region in contact with an insulating layer 82 and under which the charge storage electrode 24 is not present, and a region in contact with the insulating layer 82 and under which the charge storage electrode 24 is present. In addition, light is incident from the second electrode 22. A surface on the photoelectric conversion layer side of the oxide semiconductor layer 23C has a surface roughness Ra of 1.5 nm or less and a root mean square roughness Rq of 2.5 nm or less. In addition, the oxide semiconductor layer 23C is amorphous and has a thickness of 1 × 10 -8 m to 1.5 × 10 -7 m.

[0042] At least some of the constituent elements of the oxide film are different from elements contained in the oxide semiconductor layer 23C. If an energy average value for a conduction band of the oxide semiconductor layer is denoted by E2 and an energy average value for a conduction band of the oxide film is denoted by E1, E1−E2≥−0.4(eV), preferably E1−E2≥0(eV), preferred E1−E2≥0.1(eV) and even more preferred E1−E2>0.1(eV) Furthermore, if an energy average value for a LUMO value for the photoelectric conversion layer is denoted by E0, E0−E1≥−0.4(eV), preferably E0−E1≥0(eV), preferred E0−E1≥0.1(eV) and even more preferred E0−E1≥0.1(eV) Furthermore, preference is given to E0≥E1≥E2 fulfilled. Fig. 45 schematically illustrates a relationship of various energy values for the stacked structure of the photoelectric conversion layer 23A, the oxide film 23B, and the oxide semiconductor layer 23C.

[0043] The constituent material of the oxide film contains a metal oxide, and the oxide film 23B has a thickness equal to or greater than one atomic layer and equal to 1 × 10 -7m or smaller. Specifically, the oxide film 23B contains, for example, a metal oxide such as TiO2 with a thickness of 10 nm, and the oxide semiconductor layer 23C contains, for example, IGZO with a thickness of 50 nm. In addition, the photoelectric conversion layer 23A contains, for example, an organic semiconductor material (organic photoelectric conversion material) containing C60. Table 1 below indicates the energy average value E2 for the conduction band of the oxide semiconductor layer, an energy average value E5 for a valence band of the oxide semiconductor layer, the energy average value E1 for the conduction band of the oxide film, an energy average value E4 for a valence band of the oxide film, the energy average value E0 for the LUMO value for the photoelectric conversion layer, and an energy average value E3 for an EUMO value for the photoelectric conversion layer.A charge generated in the photoelectric conversion layer 23A migrates to the first electrode 21 via the oxide film 23B and the oxide semiconductor layer 23C. The charge comprises electrons. The constituent material of the oxide semiconductor layer has a mobility of 10 cm. 2 / V s or more, and the oxide semiconductor layer 23C has a carrier concentration of less than 1 × 10 16 / cm 3 Note that the oxide film 23B may have a single-layer structure including one layer containing a metal oxide or a stacked structure including a plurality of stacked layers each containing a metal oxide. [Table 1] E2: -4,7 eV E1: -4,5 eV E0: -4,4 eV E5: -7,7 eV E4: -7,6 eV E3: -6,2 eV

[0044] The effect of forming the oxide film 23B on the oxide semiconductor layer 23C was investigated. Specifically, a channel formation region of a TFT was formed from the stacked structure of the oxide semiconductor layer and the oxide film, and a relationship between Vgs and I d was determined. Results are in Fig. 46A. In addition, as a comparison example Fig. 46B is a graphical representation showing the relationship between V gs and I d for a TFT containing a channel formation region containing only the oxide semiconductor layer. Fig. 46A and Fig. 46B show that the characteristic is more stabilized when the channel formation region includes the stacked structure of the oxide semiconductor layer and the oxide film.

[0045] In the image pickup element of Embodiment 1, the photoelectric conversion section includes the photoelectric conversion layer, the oxide film, and the oxide semiconductor layer arranged from the second electrode side, that is, the oxide film is formed on the oxide semiconductor layer. Thus, oxygen deficiency is unlikely to occur on the front surface (surface on the photoelectric conversion layer side) of the oxide semiconductor layer or near the front surface. Generally, the front surface of the oxide semiconductor layer is unstable. However, termination with the oxide film as described above enables energy to be stabilized and enables reduction of oxygen deficiency on the front surface of the oxide semiconductor layer.As a result, traps and carriers in the oxide semiconductor layer can be reduced, and thus, variation in the characteristics (for example, a variation in a characteristic evaluated using a threshold voltage) of the oxide semiconductor layer is unlikely to occur, enabling the characteristics of charge storage and charge transfer efficiency to be improved. Furthermore, potential problems such as reduced charge transfer characteristics and reduced quality of captured images can be reliably prevented. Furthermore, since the oxide semiconductor layer is provided, recoupling of charge storage, for example, can be prevented, and the efficiency of charge transfer to the first electrode of the charge stored in the photoelectric conversion layer can be further improved.A charge generated in the photoelectric conversion layer is also temporarily held to enable control of a timing for transfer and the like and suppression of generation of a dark current.

[0046] Incidentally, in some cases, a defect such as excess oxygen or oxygen deficiency may remain in the oxide semiconductor layer 23C. In such a case, termination of the defect using hydrogen enables reduction or disabling of a defect level attributed to the defect. The oxide film 23B was formed on the oxide semiconductor layer 23C, and the effect of hydrogen termination was investigated. Specifically, (A) of Fig. 47 shows the results obtained by forming the channel formation region of the TFT with the stacked structure of the oxide semiconductor layer 23C and the oxide film 23B and comparing the relationship between V gs and I d before hydrogen termination, and (B) of Fig. 47 gives a conceptual diagram of a cross section. In addition, (C) of Fig. 47 the results of an investigation into the relationship between V gs and I d after a hydrogen termination, and (D) of Fig. Figure 47 is a conceptual diagram of a cross-section. The figures show that hydrogen termination causes the stacked structure of the oxide semiconductor layer 23C and the oxide film 23B to function as a channel layer. In (B) and (D) of Fig. 47, the “oxide” indicates the oxide film 23B, and the “oxide semiconductor” indicates the oxide semiconductor layer 23C. Fig. Fig. 48 shows an example of SIMS analysis results for the oxide film 23B and the oxide semiconductor layer 23C shown in (C) of Fig. 47. Note that with “A” and “B” in (D) of Fig. 47 areas shown correspond to areas that are indicated by “A” and “B” in Fig. 48. In (D) of Fig. 47 and Fig. 48, the region represented by "A" corresponds to an interface between the oxide semiconductor layer 23C and the oxide film 23B. This example shows that from the oxide semiconductor layer 23C toward the oxide film 23B, the concentration of atoms (specifically, Ti) contained in the oxide film increases rapidly, but the concentration of hydrogen atoms increases faster than the concentration of atoms contained in the oxide film. In other words, the figures show that the concentration of hydrogen atoms increases in a region of the oxide semiconductor layer 23C near the interface between the oxide semiconductor layer and the oxide film 23B. (a) from Fig. Figure 49 shows the results of a prediction, as an example of a defect site, of an interface between the oxide semiconductor layer 23C and the oxide film 23B where excess oxygen is present, based on an ab initio calculation. In addition, (b) of Fig. 49, based on an ab initio calculation, the results of a prediction of a state resulting from the addition of hydrogen to the state in (a) of Fig. 49, and also indicates that the hydrogen atoms bond to the excess oxygen atoms to enable a stable system to be obtained.

[0047] In other words, the average value Conc H-1 the concentration of hydrogen atoms in the region of the oxide semiconductor layer 23C near the interface between the oxide film 23B and the oxide semiconductor layer 23C is higher than the average value Conc H-2 the concentration of hydrogen atoms in the central region along the thickness direction of the oxide semiconductor layer 23C. Specifically, preferably ConcH−1 / ConcH−2≥1.1 In addition, or alternatively, assuming that Conc H-1the value of the concentration of hydrogen atoms in the region of the oxide semiconductor layer 23C near the interface between the oxide film 23B and the oxide semiconductor layer 23C and that Conc H-1 is the value of the concentration of atoms contained in the oxide film 23B and arranged in the region of the oxide semiconductor layer 23C near the interface between the oxide film 23B and the oxide semiconductor layer 23C, the average change rate ΔConc H-1 by Conc H-1 towards the central region along the thickness direction of the oxide semiconductor layer 23C is higher than the average change rate ΔConc M-1 by Conc H-1 towards the central region along the thickness direction of the oxide semiconductor layer 23C, as shown in Fig. 48. Note that in Fig. 48 the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer is indicated as “Section A”.

[0048] The oxide film 23B may include a tunnel oxide film. Here, the tunnel oxide film may include at least one type of material selected from the group consisting of SiO x , SiON, SiOC and AlO y Note that the tunnel oxide film here may have a single-layer structure of one layer containing at least one kind of these materials, or a stacked structure of a plurality of stacked layers including a plurality of materials contained in these materials. The thickness of the tunnel oxide film is preferably equal to or greater than one atomic layer and equal to 5 × 10 -9m or less. In a case where the oxide film was formed from such a tunnel oxide film, excellent effects similar to those described above were also successfully obtained.

[0049] Alternatively, the oxide film 23B may have a stacked structure of a metal oxide-containing film and a tunnel oxide film. In this case, the oxide film 23B may be configured such that the metal oxide contains at least one type of element selected from the group consisting of tantalum, titanium, vanadium, niobium, tungsten, zirconium, hafnium, scandium, yttrium, lanthanum, gallium, and magnesium, and further such that the thickness of the metal oxide-containing film is equal to or greater than one atomic layer and equal to 1 × 10 -7 m or smaller. In these cases, moreover, the configuration may be arranged such that the tunnel oxide film contains at least one kind of material selected from the group consisting of SiO x, SiON, SiOC and AlO y and further such that in these cases the thickness of the film containing the metal oxide is equal to one atomic layer or greater than or equal to 5 × 10 -9 m or smaller. Specifically, for example, the oxide film 23B may have a stacked structure of a metal oxide-containing film with a thickness of 10 nm (more specifically, for example, a TiO2 film located on the photoelectric conversion layer 23A side) and a tunnel oxide film with a thickness of 0.5 nm (more specifically, for example, an SiO2 film located on the oxide semiconductor layer 23C side). When the oxide film with such a structure was used, effects similar to those described above were also successfully obtained.

[0050] In a case where the charge includes holes, it is preferable to further assume that E4 is the energy average value for the valence band of the oxide film and that E3 is the energy average value for the HOMO value for the photoelectric conversion layer, E3−E4≥−0.4(eV), preferably E3−E4≥0(eV), preferred E3−E4≥0.1(eV) and even more preferred E3−E4>0.1(eV) Furthermore, in this case, assuming that E5 is the energy average value for the valence band of the oxide semiconductor layer, E4−E5≥−0.4(eV), preferably E4−E5≥0(eV), preferred E4−E5≥0.1(eV) and even more preferred E4−E5>0.1(eV) preferably fulfilled, and in addition, it is particularly preferred E3≥E4≥E5 fulfilled.

[0051] The image pickup element of the present disclosure, the stacked image pickup element of the present disclosure, and the solid-state image pickup device according to the second aspect of the present disclosure will be generally described below, and the image pickup element and the solid-state image pickup device in Embodiment 1 will then be described in detail. In the description below, a case where the potential applied to the first electrode is higher than the potential applied to the second electrode will be described. However, if the potential applied to the first electrode is lower than the potential applied to the second electrode, it is sufficient to exchange the magnitude relationship between the potentials applied to the various electrodes. Table 2 below indicates the signs of the potentials applied to the various electrodes in the following description. [Table 2] Ladungsspeicherperiode Ladungsübertragungsperiode Erste Elektrode V 11 V 12 Zweite Elektrode V 21 V 22 Ladungsspeicherelektrode V 31 V 32 Ladungsübertragungs- V 41 V 42 Steuerelektrode Übertragungs-Steuerelektrode V 51 V 52 Ladungsemissionselektrode V 61 V 62

[0052] In the image pickup element and the like of the present disclosure, the oxide semiconductor layer preferably has a light transmittance of 65% or more with respect to light having a wavelength of 400 to 660 nm. Furthermore, the charge storage electrode preferably has a light transmittance of 65% or more with respect to light having a wavelength of 400 to 660 nm. The charge storage electrode preferably has a sheet resistance of 3 × 10 Ω / cm 2 up to 1 × 10 3 Ω / cm 2 .

[0053] The image pickup element and the like of the present disclosure further include a semiconductor substrate, and the photoelectric conversion section may be disposed above the semiconductor substrate. Note that the first electrode, the charge storage electrode, the second electrode, and the various electrodes are connected to a drive circuit described below.

[0054] The second electrode located on the light incident side may be shared by a plurality of image pickup elements. In other words, except for the case of an image pickup element and the like including an upper charge transfer control electrode according to the present disclosure, which will be described below, the second electrode may be what is called a fixed electrode. The photoelectric conversion layer may be shared by a plurality of image pickup elements; in other words, one photoelectric conversion layer may be formed for a plurality of image pickup elements, or the photoelectric conversion layer may be provided for each image pickup element. The oxide semiconductor layer is preferably provided for each image pickup element, but may be shared by a plurality of image pickup elements if desired.In other words, for example, the charge transfer control electrode described below may be provided between image pickup elements to form an oxide semiconductor layer shared by the plurality of image pickup elements. In a case where an oxide semiconductor layer shared by a plurality of image pickup elements is formed, ends of the oxide semiconductor layer are desirably covered with at least the photoelectric conversion layer in order to protect the ends of the oxide semiconductor layer.

[0055] The image pickup element and the like including the various preferred configurations and arrangements described above may further be configured such that the first electrode extends through an opening provided in the insulating layer and is connected to the oxide semiconductor layer. Alternatively, the configuration may be arranged such that the oxide semiconductor layer extends through an opening provided in the insulating layer and is connected to the first electrode. In this case, the configuration may be arranged such that edges of an upper surface of the first electrode are covered with an insulating layer, the first electrode is exposed on a bottom surface of the opening and assuming that a surface of the insulating layer in contact with the upper surface of the first electrode is a first surface and that a surface of the insulating layer in contact with a region of the oxide semiconductor layer opposite to the charge storage electrode is a second surface, a side surface of the opening has a slope widening from the first surface to the second surface, and further the side surface of the opening including the slope widening from the first surface to the second surface is located on the side of the charge storage electrode.

[0056] The image pickup element and the like including the various preferred configurations and arrangements described above may be further configured such that the image pickup element and the like further include a control section provided in the semiconductor substrate and including a drive circuit, the first electrode and the charge storage electrode are connected to the drive circuit, During a charge storage period, the control circuit has a potential V 11 to the first electrode, a potential V 31 to the charge storage electrode and stores charge in the oxide semiconductor layer (or the oxide semiconductor layer and the photoelectric conversion layer or the oxide semiconductor layer, the oxide layer and the photoelectric conversion layer) and During a charge transfer period, the control circuit has a potential V 12 to the first electrode, a potential V 32to the charge storage electrode and reads the charge stored in the oxide semiconductor layer (or the oxide semiconductor layer and the photoelectric conversion layer) to the control section via the first electrode. However, the first electrode has a higher potential than the second electrode, and V31≥V11 and V32 <V12 are satisfied. Note that the oxide semiconductor layer, or the oxide semiconductor layer and the photoelectric conversion layer, or the oxide semiconductor layer, the oxide film, and the photoelectric conversion layer as described above may be collectively referred to as "oxide semiconductor layer and the like."

[0057] Furthermore, the image pickup element and the like including the various preferred configurations and arrangements described above may be configured such that the charge transfer control electrode is formed in a region opposite to a region of the photoelectric conversion layer via the insulating layer, the photoelectric conversion layer region being located between adjacent image pickup elements. Note that, for convenience, such a configuration may be referred to as "image pickup element and the like including a lower charge transfer control electrode according to the present disclosure." Alternatively, the configuration may be arranged such that, instead of the second electrode, the charge transfer control electrode is formed on the photoelectric conversion layer located between adjacent image pickup elements.Note that such a configuration may be referred to as “image pickup element and the like including an upper charge transfer control electrode according to the present disclosure” for convenience.

[0058] In the description below, for convenience, the "region of the photoelectric conversion layer located between the adjacent image pickup elements" is referred to as "region -A of the photoelectric conversion layer," and the "region of the insulating layer located between the image pickup elements" is referred to as "region -A of the insulating layer." The region -A of the photoelectric conversion layer corresponds to the region -A of the insulating layer. Further, for convenience, the "region between the adjacent image pickup elements" is referred to as "region -a."

[0059] In the image pickup element and the like including the lower charge transfer control electrode according to the present disclosure (lower-side charge transfer control electrode or charge transfer control electrode located opposite to the light incident side with respect to the photoelectric conversion layer), the lower charge transfer control electrode is formed in a region opposite to the -A region of the photoelectric conversion layer via the insulating layer. In other words, the lower charge transfer control electrode is formed below the portion of the insulating layer (-A region of the insulating layer) in the region (-a region) sandwiched between the charge storage electrodes included in each of the adjacent image pickup elements. The lower charge transfer control electrode is provided at a distance from the charge storage electrode.Alternatively, in other words, the lower charge transfer control electrode is provided so as to surround the charge storage electrode at a distance from the charge storage electrode and arranged so as to oppose the region -A of the photoelectric conversion layer via the insulating layer.

[0060] The image pickup element and the like including the lower charge transfer control electrode according to the present disclosure may be configured such that the image pickup element and the like further include the control section provided in the semiconductor substrate and including the drive circuit, the first electrode, the second electrode, the charge storage electrode and the lower charge transfer control electrode are connected to the drive circuit, During the charge storage period, the control circuit maintains the potential V 11to the first electrode, the potential V 31 to the charge storage electrode, a potential V 41 to the lower charge transfer control electrode and stores charge in the oxide semiconductor layer and the like and During the charge transfer period, the drive circuit maintains the potential V 12 to the first electrode, the potential V 32 to the charge storage electrode, a potential V 42 to the lower charge transfer control electrode and reads out the charge stored in the oxide semiconductor layer and the like to the control section via the first electrode. However, V31≥V11, V31>V41 and V12>V32>V42 The lower charge transfer control electrode may be formed in the same plane as that in which the first electrode or the charge storage electrode is formed, or in a plane different from the plane of the first electrode or the charge storage electrode.

[0061] In the image pickup element and the like including the upper charge transfer control electrode according to the present disclosure (top-side charge transfer control electrode or charge transfer control electrode located on the light incident side with respect to the photoelectric conversion layer), instead of the second electrode, the upper charge transfer control electrode is formed on a region of the photoelectric conversion layer located between adjacent image pickup elements and is spaced from the second electrode. In other words, [A] the configuration may be arranged such that the second electrode is provided for each image pickup element and that the upper charge transfer control electrode surrounds at least a part of the second electrode at a distance from the second electrode and is provided on a region -A of the photoelectric conversion layer, or [B] the configuration may be arranged such that the second electrode is provided for each image pickup element, that the upper charge transfer control electrode surrounds at least a part of the second electrode at a distance from the second electrode, and that a part of the charge storage electrode is provided below the upper charge transfer control electrode, or [C] The configuration may be arranged such that the second electrode is provided for each image pickup element, the upper charge transfer control electrode surrounds at least a part of the second electrode at a distance from the second electrode, a part of the charge storage electrode is provided below the upper charge transfer control electrode, and further, the lower charge transfer control electrode is formed below the upper charge transfer control electrode. A potential generated by coupling between the upper charge transfer control electrode and the second electrode is applied to a region of the photoelectric conversion layer located below the region between the upper charge transfer control electrode and the second electrode.

[0062] In addition, the image pickup element and the like including the upper charge transfer control electrode of the present disclosure may be configured such that the image pickup element and the like further include the control section provided in the semiconductor substrate and including the drive circuit, the first electrode, the second electrode, the charge storage electrode and the upper charge transfer control electrode are connected to the drive circuit, During the charge storage period, the control circuit has a potential V 21 to the second electrode, the potential V 41 to the upper charge transfer control electrode and stores charge in the oxide semiconductor layer and During the charge transfer period, the drive circuit has a potential of V 22 to the second electrode, the potential V 42to the upper charge transfer control electrode and reads out the charge stored in the oxide semiconductor layer and the like to the control section via the first electrode. However, V21≥V41 and V22≥V42 The upper charge transfer control electrode is formed in the same plane as that in which the second electrode is formed.

[0063] Furthermore, the image pickup element and the like including the various preferred configurations and arrangements described above may further include a transfer control electrode (charge transfer electrode) disposed between the first electrode and the charge storage electrode at a distance from the first electrode and the charge storage electrode, and arranged to oppose the oxide semiconductor layer via the insulating layer. The image pickup element and the like of the present disclosure configured in this way may be referred to as "image pickup element and the like including a transfer control electrode according to the present disclosure" for convenience.

[0064] The image pickup element and the like including the transfer control electrode according to the present disclosure may be configured such that the image pickup element and the like further include the control section provided in the semiconductor substrate and including the drive circuit, the first electrode, the charge storage electrode and the transfer control electrode are connected to the drive circuit, During the charge storage period, the control circuit maintains the potential V 11 to the first electrode, the potential V 31 to the charge storage electrode, the potential V 51 to the transfer control electrode and stores charge in the oxide semiconductor layer and the like and During the charge transfer period, the drive circuit maintains the potential V 12 to the first electrode, the potential V 32 to the charge storage electrode, the potential V 52to the transfer control electrode and reads the charge stored in the oxide semiconductor layer and the like to the control section via the first electrode. However, the first electrode has a higher potential than the second electrode, and V31>V51 and V32≤V52≤V12 are fulfilled.

[0065] Furthermore, the image pickup element and the like of the present disclosure, which include the preferred configurations and arrangements described above, may include a charge-emitting electrode connected to the oxide semiconductor layer and spaced apart from the first electrode and the charge-storing electrode. The image pickup element and the like of the present disclosure thus configured may be referred to as "image pickup element and the like including a charge-emitting electrode according to the present disclosure" for convenience. Furthermore, the image pickup element and the like including the charge-emitting electrode according to the present disclosure may be configured such that the charge-emitting electrode is arranged to surround the first electrode and the charge-storing electrode (i.e., like a frame).The charge-emitting electrode may be shared or jointly used (connected use) by a plurality of image pickup elements. In this case, the configuration may be arranged such that the oxide semiconductor layer and the like extend through a second opening provided in the insulating layer and are connected to the charge emission electrode, edges of an upper surface of the charge emission electrode are covered with an insulating layer, the charge emission electrode is exposed on a bottom surface of the second opening and assuming that a surface of the insulating layer in contact with the upper surface of the charge emission electrode is a third surface and that a surface of the insulating layer in contact with a region of the oxide semiconductor layer opposite to the charge storage electrode is a second surface, a side surface of the second opening includes a slope widening from the third surface to the second surface.

[0066] Further, the image pickup element and the like including the charge emission electrode according to the present disclosure may be configured such that the image pickup element and the like further include the control section provided in the semiconductor substrate and including the drive circuit, the first electrode, the charge storage electrode and the charge emission electrode are connected to the drive circuit, During the charge storage period, the control circuit maintains the potential V 11 to the first electrode, the potential V 31 to the charge storage electrode, a potential V 61 to the charge emission electrode and stores charge in the oxide semiconductor layer and the like and During a charge transfer period, the control circuit maintains the potential V 12 to the first electrode, the potential V 32 to the charge storage electrode, a potential V 62 to the charge-emitting electrode and reads out the charge stored in the oxide semiconductor layer and the like to the control section via the first electrode. However, the first electrode has a higher potential than the second electrode, and V61>V11 and V62 <V12 are fulfilled.

[0067] Moreover, the above-described various preferred configurations and arrangements of the image pickup element or the like of the present disclosure may be configured such that the charge storage electrode includes a plurality of charge storage electrode segments. The image pickup element and the like of the present disclosure thus configured may be referred to as "image pickup element and the like including a plurality of charge storage electrode segments according to the present disclosure" for convenience. It is sufficient that the number of charge storage electrode segments is two or more. The image pickup element and the like including the plurality of charge storage electrode segments of the present disclosure may be configured such that, in a case where different potentials are applied to respective N charge storage electrode segments, in a case where the first electrode has a higher potential than the second electrode, the potential applied to the segment of a charge storage electrode closest to the first electrode (first segment of a photoelectric conversion section) during the charge transfer period is higher than the potential applied to the segment of a charge storage electrode farthest from the first electrode (N-th segment of a photoelectric conversion section) during the charge transfer period, and in a case where the first electrode has a lower potential than the second electrode, the potential applied to the segment of a charge storage electrode closest to the first electrode (first segment of a photoelectric conversion section) during the charge transfer period is lower than the potential applied to the segment of a charge storage electrode farthest from the first electrode (N-th segment of a photoelectric conversion section) during the charge transfer period.

[0068] The image pickup element and the like including the various preferred configurations and arrangements described above may be configured such that the semiconductor substrate is provided with at least one floating diffusion layer and one amplification transistor included in the control section, and the first electrode is connected to the floating diffusion layer and a gate section of the amplification transistor. In this case, the image pickup element and the like may be further configured such that the semiconductor substrate is further provided with a reset transistor and a selection transistor which are included in the control section, the floating diffusion layer is connected to one of the source / drain regions of the reset transistor and one of source / drain regions of the amplification transistor is connected to one of source / drain regions of the selection transistor and the other source / drain region of the selection transistor is connected to a signal line.

[0069] Moreover, the image pickup element and the like including the above-described various preferred configurations and arrangements may be configured such that the charge storage electrode is larger in size than the first electrode. Assuming that an area of the charge storage electrode is s1' and that an area of the first electrode is s1, it is preferable 4≤s1' / s1 fulfilled; but you are not limited to it.

[0070] Alternatively, modified examples of the image pickup element and the like including the various preferred configurations and arrangements described above may include image pickup elements of the first to sixth configurations described below. In other words, in the image pickup elements of the first to sixth configurations including the various preferred configurations and arrangements described above, the photoelectric conversion section N (N ≥ 2) segments of a photoelectric conversion section, the oxide semiconductor layer and the like comprise N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, in the image pickup elements of the first to third configurations, the charge storage electrode comprises N segments of a charge storage electrode, in the image pickup elements of the fourth and fifth configurations, the charge storage electrode comprises N segments of a charge storage electrode which are spaced apart from one another, an n-th (n = 1, 2, 3, ... N) segment of a photoelectric conversion section includes an n-th segment of a charge storage electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, and The photoelectric conversion section segment with a larger value of n is located farther from the first electrode. Here, the "photoelectric conversion section segment" refers to a segment including the photoelectric conversion layer, the oxide film, and the oxide semiconductor layer stacked on top of each other.

[0071] In the image pickup element of the first configuration, the segments of an insulating layer have a thickness that gradually varies from a first segment of a photoelectric conversion section to an N-th segment of a photoelectric conversion section. Furthermore, in the image pickup element of the second configuration, the segments of a photoelectric conversion section have a thickness that gradually varies from the first segment of a photoelectric conversion section to the N-th segment of a photoelectric conversion section.Note that in the photoelectric conversion layer segment, the thickness of the photoelectric conversion layer segment can be varied by varying the thickness of the photoelectric conversion layer region while keeping the thickness of the oxide semiconductor layer region constant, or the thickness of the photoelectric conversion layer segment can be varied by varying the thickness of the oxide semiconductor layer region while keeping the thickness of the photoelectric conversion layer region constant. Alternatively, the thickness of the photoelectric conversion layer segment can be varied by changing the thickness of the photoelectric conversion layer region and the thickness of the oxide semiconductor layer region.Furthermore, in the image pickup element of the third configuration, the material contained in the segment of an insulating layer differs between the adjacent segments of a photoelectric conversion section. Furthermore, in the image pickup element of the fourth configuration, the material contained in the segment of a charge storage electrode differs between the adjacent segments of a photoelectric conversion section. Furthermore, in the image pickup element of the fifth configuration, the segments of a charge storage electrode have an area that gradually decreases from the first segment of a photoelectric conversion section to the Nth segment of a photoelectric conversion section. The area may decrease continuously or step by step.

[0072] Alternatively, in the image pickup element of the sixth configuration in the image pickup element and the like including the above-described various configurations and arrangements, assuming that a stacking direction of the charge storage electrode, the insulating layer, the oxide semiconductor layer, and the photoelectric conversion layer is a Z direction and that a direction away from the first electrode is an X direction, a cross-sectional area of a stacked region taken along a virtual YZ plane varies depending on a distance from the first electrode, the stacked region including the charge storage electrode, the insulating layer, the oxide semiconductor layer, the oxide film, and the photoelectric conversion layer stacked one on top of the other. The cross-sectional area may vary continuously or step by step.

[0073] In the image pickup elements of the first and second configurations, N segments of a photoelectric conversion layer are provided consecutively, the N segments of an insulating layer are also provided consecutively, and the N segments of a charge storage electrode are also provided consecutively. In the image pickup elements of the third to fifth configurations, the N segments of a photoelectric conversion layer are provided consecutively. Furthermore, in the image pickup elements of the fourth and fifth configurations, the N segments of an insulating layer are provided consecutively, whereas in the image pickup element of the third configuration, the N segments of an insulating layer are provided to correspond to the respective segments of a photoelectric conversion section.Furthermore, in the image pickup elements of the fourth and fifth configurations, in some cases, the N segments of a charge storage electrode are provided in the image pickup element of the third configuration to correspond to the respective segments of a photoelectric conversion section. In the image pickup elements of the first to sixth configurations, the same potential is applied to all the segments of a charge storage electrode. Alternatively, in the image pickup elements of the fourth and fifth configurations, in some cases, different potentials may be applied to the respective N segments of a charge storage electrode in the image pickup element of the third configuration.

[0074] In the image pickup element and the like of the present disclosure including the image pickup elements of the first to sixth configurations, the segments of an insulating layer have a specified thickness, the segments of a photoelectric conversion layer have a specified thickness, the segments of an insulating layer contain different materials, the segments of a charge storage electrode contain different materials, the segments of a charge storage electrode have a specified area, or the stacked region has a specified cross-sectional area, and thus, a type of charge transfer gradient can be formed, allowing charge generated by photoelectric conversion to be transferred to the first electrode more easily and reliably. As a result, a possible afterimage and a possible incomplete charge transfer can be prevented.

[0075] In the image pickup elements of the first to fifth configurations, the segment of a photoelectric conversion section with a larger value n is located farther from the first electrode, and whether or not the segment of a photoelectric conversion section is located away from the first electrode is determined with reference to the X direction. Furthermore, in the image pickup element of the sixth configuration, the direction away from the first electrode is the X direction, and the "X direction" is defined as follows. Specifically, a pixel region in which a plurality of image pickup elements or a plurality of stacked image pickup elements are arranged includes a plurality of pixels arranged in a two-dimensional array, in other words, regularly arranged in the X direction and the Y direction.If the pixel has a quadrilateral planar shape, a direction in which a side of the quadrilateral closest to the first electrode extends is the Y direction, and a direction orthogonal to the Y direction is the X direction. Alternatively, in a case where the pixel has any planar shape, a general direction including a segment or curve closest to the first electrode is the Y direction, and a direction orthogonal to the Y direction is the X direction.

[0076] Regarding the image pickup elements of the first to sixth configurations, a case where the first electrode has a higher potential than the second electrode will be described. However, if the first electrode has a lower potential than the second electrode, it is sufficient to exchange the magnitude relationship between the potentials.

[0077] In the image pickup element of the first configuration, the insulating layer segments have a thickness that gradually varies from the first photoelectric conversion section segment to the N-th photoelectric conversion section segment, and the thickness of the insulating layer segment preferably gradually increases, thereby forming a type of charge transfer gradient. During the charge storage period, when such a state as V 31 ≥ V 11 is established, an n-th segment of a photoelectric conversion section can store more charge than an (n+1)-th segment of a photoelectric conversion section, and a strong electric field is applied to reliably prevent a charge current from the first segment of a photoelectric conversion section to the first electrode. In addition, during the charge transfer period, when such a state as V 32 < V 12is established, flows of charge are reliably provided, which include a charge flow from the first segment of a photoelectric conversion section to the first electrode and a charge flow from the (n+1)-th segment of a photoelectric conversion section to the n-th segment of a photoelectric conversion section.

[0078] In the image pickup element of the second configuration, the photoelectric conversion layer segments have a thickness that gradually varies from the first photoelectric conversion section segment to the N-th photoelectric conversion section segment, and the thickness of the photoelectric conversion layer segment preferably gradually increases, thereby forming a type of charge transfer gradient. During the charge storage period, when such a state as V 31 ≥ V 11is established, a stronger electric field is applied to the n-th segment of a photoelectric conversion section than to the (n+1)-th segment of a photoelectric conversion section, which enables reliable prevention of charge current from the first segment of a photoelectric conversion section to the first electrode. Furthermore, during the charge transfer period, when such a state as V 32 < V 12 is established, charge flows are reliably provided which include a charge flow from the first segment of a photoelectric conversion section to the first electrode and a charge flow from the (n+1)-th segment of a photoelectric conversion section to the n-th segment of a photoelectric conversion section.

[0079] In the image pickup element of the third configuration, the adjacent segments of a photoelectric conversion section include different materials contained in the segment of an insulating layer to form a type of charge transfer gradient, and the materials contained in the segments of an insulating layer preferably have a relative permittivity value that gradually decreases from the first segment of a photoelectric conversion section to the N-th segment of a photoelectric conversion section. Adopting such a configuration enables the n-th segment of a photoelectric conversion section to store more charge than the (n+1)-th segment of a photoelectric conversion section when such a state as V 31 ≥ V 11 during the charge storage period. During the charge transfer period, if such a state as V 32 < V 12is established, charge flows are reliably provided which include a charge flow from the first segment of a photoelectric conversion section to the first electrode and a charge flow from the (n+1)-th segment of a photoelectric conversion section to the n-th segment of a photoelectric conversion section.

[0080] In the image pickup element of the fourth configuration, the material contained in the segment of a charge storage electrode differs between adjacent segments of a photoelectric conversion section to form a type of charge transfer gradient, and the materials contained in the segments of an insulating layer preferably have a work function value that gradually increases from the first segment of a photoelectric conversion section to the Nth segment of a photoelectric conversion section. Adopting such a configuration enables a potential gradient favorable for charge transfer without depending on the positive and negative signs of the voltage (potential).

[0081] In the image pickup element of the fifth configuration, the segment of a charge storage electrode has an area that gradually decreases from the first segment of a photoelectric conversion section to the N-th segment of a photoelectric conversion section, thus forming a kind of charge transfer gradient. When such a state as V 31 ≥ V 11 is established during the charge storage period, the n-th segment of a photoelectric conversion section can store more charge than the (n+1)-th segment of a photoelectric conversion section. Furthermore, during the charge transfer period, when such a state as V 32 < V 12is established, charge flows are reliably provided which include a charge flow from the first segment of a photoelectric conversion section to the first electrode and a charge flow from the (n+1)-th segment of a photoelectric conversion section to the n-th segment of a photoelectric conversion section.

[0082] In the image pickup element of the sixth configuration, the stacked region has a cross-sectional area that varies depending on the distance from the first electrode, so that a type of charge transfer gradient is formed. Specifically, in a case where a configuration is adopted in which the stacked region has a constant cross-sectional thickness and a cross-sectional width that decreases with increasing distance from the first electrode, when such a state as V 31 ≥ V 11During the charge storage electrode is established, similar to the image pickup element of the fifth configuration, a region closer to the first electrode can store more charge than a region further away from the first electrode. Consequently, during the charge transfer period, when a state such as V 32 < V 12 is established, charge flows can be reliably provided, including a charge flow from the region closer to the first electrode to the first electrode and a charge flow from the more distant region to the closer region. On the other hand, in a case where a configuration is adopted in which the stacked region has a constant cross-sectional width and a cross-sectional thickness, namely the thickness of the segments of an insulating layer, which gradually decreases, when such a state as V 32 < V 12During the charge storage period, the area closer to the first electrode can store more charge than the area further away from the first electrode, and a stronger electric field is applied to the closer area than to the further area, which enables reliable prevention of charge flow from the area closer to the first electrode to the first electrode, similar to the image pickup element of the first configuration. During the charge transfer period, when such a state as V 32 < V 12is established, charge flows can be reliably provided, including a charge flow from the region closer to the first electrode to the first electrode and a charge flow from the more distant region to the closer region. Furthermore, in a case where a configuration is adopted in which the segments of a photoelectric conversion layer have a gradually increasing thickness, when such a state as V 31 >| V 11 During the charge storage period, a stronger electric field is applied to the region closer to the first electrode than to the region further away from the first electrode, which, similar to the image pickup element of the second configuration, allows reliable prevention of charge flow from the region closer to the first electrode to the first electrode. During the charge transfer period, when such a state as V 32 < V 12is established, charge flows are reliably provided which comprise a charge flow from the region closer to the first electrode to the first electrode and a charge flow from the more distant region to the closer region.

[0083] Two or more types of image pickup elements of the first to sixth configurations including the preferred configurations and arrangements described above may be suitably combined as desired.

[0084] A modified example of the solid-state imaging devices according to the first and second aspects of the present disclosure may be a solid-state imaging device comprising comprises a plurality of image pickup elements of the first to sixth configurations, wherein the plurality of image pickup elements are contained in an image pickup element block and the first electrode is shared by the plurality of image pickup elements included in the image pickup element block. The solid-state image pickup device thus configured will be referred to as a “solid-state image pickup device of a first configuration” for convenience. Alternatively, a modified example of the solid-state image pickup devices according to the first and second aspects of the present disclosure may be a solid-state image pickup device comprising a plurality of image pickup elements of the first to sixth configurations or a plurality of stacked image pickup elements containing at least one of the image pickup elements of the first to sixth configurations, wherein the plurality of image pickup elements or the plurality of stacked image pickup elements are contained in an image pickup element block and the first electrode is shared by the plurality of image pickup elements or the plurality of stacked image pickup elements included in the image pickup element block. The solid-state image pickup device thus configured will be referred to as a "solid-state image pickup device of a second configuration" for convenience. In a case where the first electrode is thus shared by the plurality of image pickup elements included in an image pickup element block, the configuration and structure in the pixel region in which a plurality of image pickup elements are arranged can be simplified and miniaturized.

[0085] In the solid-state imaging devices of the first and second configurations, a floating diffusion layer is provided for a plurality of imaging elements (an imaging element block). Here, the plurality of imaging elements provided for one floating diffusion layer may include a plurality of imaging elements of the first type described below, or may include at least one imaging element of the first type and one or two or more imaging elements of a second type described below. One floating diffusion layer may be shared by a plurality of imaging elements by appropriately controlling timings for the charge transfer period. The plurality of imaging elements are operated in a composite manner and are connected as an imaging element block to the driving circuit described below.In other words, the plurality of image pickup elements included in the image pickup element block are connected to a driving circuit. However, the charge storage electrode is controlled for each image pickup element. In addition, a plurality of image pickup elements may share a contact hole region. An arrangement relationship between the first electrode shared by the plurality of image pickup elements and the charge storage electrode of each image pickup element may be arranged such that the first electrode is arranged to be adjacent to the charge storage electrode of each image pickup element. Alternatively, the first electrode may be arranged to be adjacent to the charge storage electrodes of some of the plurality of image pickup elements and may not be arranged to be adjacent to the charge storage electrodes of the remaining ones of the plurality of image pickup elements.In this case, charge migrates from the remaining ones of the plurality of image pickup elements to the first electrode via some of the plurality of image pickup elements. A distance between the charge storage electrode included in the image pickup element and the charge storage electrode included in the image pickup element (referred to as "distance A" for convenience) is preferably longer than a distance between the first electrode in the image pickup element adjacent to the first electrode and the charge storage electrode (referred to as "distance B" for convenience) to enable reliable migration of charge from each image pickup element to the first electrode. Furthermore, the distance A preferably has a larger value for the image pickup elements located further away from the first electrode.Note that the above description can be applied not only to the solid-state imaging devices of the first and second configurations but also to the solid-state imaging devices according to the first and second aspects of the present disclosure.

[0086] The image pickup element and the like including the various preferred configurations and arrangements described above may further be configured so that light is incident from the second electrode side, and a light-shielding layer is formed on the light-incident side and closer to the second electrode. Alternatively, the image pickup element and the like may be configured so that light is incident from the second electrode side and not incident on the first electrode (in some cases, the first electrode and the transfer control electrode).In this case, the image pickup element and the like may be configured such that the light-shielding layer is formed on the light incident side and closer to the second electrode and above the first electrode (in some cases, the first electrode and the transfer control electrode), or such that an on-chip microlens is provided above the charge storage electrode and the second electrode, and light incident on the on-chip microlens is focused on the charge storage electrode. Here, the light-shielding layer may be disposed above or on a surface on the light incident side of the second electrode. The light-shielding layer may possibly be formed in the second electrode. Examples of a material contained in the light-shielding layer include chromium (Cr), copper (Cu), aluminum (Al), tungsten (W), and a resin that does not transmit light (for example, a polyimide resin).

[0087] Specific examples of the image pickup element and the like of the present disclosure include an image pickup element including a photoelectric conversion layer or a photoelectric conversion section that absorbs blue light (light ranging from 425 nm to 495 nm) (which will be referred to as a “first-type blue light photoelectric conversion layer” or a “first-type blue light photoelectric conversion section” for convenience) and is sensitive to blue light (the image pickup element will be referred to as a “first-type blue light image pickup element” for convenience), an image pickup element including a photoelectric conversion layer or a photoelectric conversion section that absorbs green light (ranging from 495 nm to 570 nm),(which, for convenience, will be referred to as a "first-type green light photoelectric conversion layer" or a "first-type green light photoelectric conversion section") and is sensitive to green light (the image pickup element will be referred to as a "first-type green light image pickup element"), and an image pickup element including a photoelectric conversion layer or a photoelectric conversion section that absorbs red light (ranging from 620 nm to 750 nm) (which, for convenience, will be referred to as a "first-type red light photoelectric conversion layer" or a "first-type red light photoelectric conversion section") and is sensitive to red light (the image pickup element will be referred to as a "first-type red light image pickup element"). In addition, a known image pickup elementwhich does not contain a charge storage electrode and is sensitive to blue light is referred to as a "second-type blue light image pickup element" for the sake of convenience; a known image pickup element which does not contain a charge storage electrode and is sensitive to green light is referred to as a "second-type green light image pickup element" for the sake of convenience; a known image pickup element which does not contain a charge storage electrode and is sensitive to red light is referred to as a "second-type red light image pickup element" for the sake of convenience; the photoelectric conversion layer or photoelectric conversion section included in the second-type blue light image pickup element is referred to as a "second-type blue light photoelectric conversion layer" or "second-type blue light photoelectric conversion section" for the sake of convenience;For convenience, the photoelectric conversion layer or photoelectric conversion section included in the second type green light image pickup element is referred to as a “second type green light photoelectric conversion layer” or a “second type green light photoelectric conversion section,” and the photoelectric conversion layer or photoelectric conversion section included in the second type red light image pickup element is referred to as a “second type red light photoelectric conversion layer” or a “second type red light photoelectric conversion section.”

[0088] The stacked image pickup element of the present disclosure includes at least one image pickup element and the like (photoelectric conversion element) of the present disclosure. Specifically, the stacked image pickup element has, for example, [A] a configuration or structure in which the first type blue light photoelectric conversion section, the first type green light photoelectric conversion section, and the first type red light photoelectric conversion section are stacked, and the control sections of the first type blue light image pickup element, the first type green light image pickup element, and the first type red light image pickup element are each provided on the semiconductor substrate, [B] a configuration or structure in which the first type blue light photoelectric conversion section and the first type green light photoelectric conversion section are stacked in the vertical direction, the second type photoelectric conversion section for red light is arranged under the two layers of the first type photoelectric conversion section for blue and green light, and the control sections of the first type blue light image pickup element, the first type green light image pickup element, and the second type red light image pickup element are each provided on the semiconductor substrate, [C] a configuration or structure in which the second type photoelectric conversion section for blue light and the second type photoelectric conversion section for red light are arranged below the first type photoelectric conversion section for green light, and the control sections of the first type image pickup element for green light, the second type image pickup element for blue light, and the second type image pickup element for red light are each provided on the semiconductor substrate, or [D] a configuration or structure in which the second type green light photoelectric conversion section and the second type red light photoelectric conversion section are arranged below the first type blue light photoelectric conversion section, and The control sections of the first-type blue light image pickup element, the second-type green light image pickup element, and the second-type red light image pickup element are each provided on the semiconductor substrate. The photoelectric conversion sections of the image pickup elements are preferably arranged in the vertical direction in the order of the blue light photoelectric conversion section, the green light photoelectric conversion section, and the red light photoelectric conversion section, or in the order of the green light photoelectric conversion section, the blue light photoelectric conversion section, and the red light photoelectric conversion section, from the light incident direction. This is because light with a shorter wavelength is efficiently absorbed on the incident surface side.Red light has the longest wavelength among the three colors, and therefore, the red light photoelectric conversion section is preferably located in the deepest layer from the incident light surface. A pixel is formed by the stacked structure of these image pickup elements. Furthermore, a first-type near-infrared light photoelectric conversion section (or infrared light photoelectric conversion section) may be provided. Here, the photoelectric conversion layer of the first-type infrared light photoelectric conversion section preferably contains an organic material and is located in the deepest layer of the stacked structure of the first-type image pickup elements, but above the second-type image pickup element.Alternatively, a second type near-infrared light photoelectric conversion section (or infrared light photoelectric conversion section) may be provided below the first type photoelectric conversion section.

[0089] In the first-type image pickup element, for example, the first electrode is formed on an interlayer insulating layer provided on the semiconductor substrate. The image pickup element formed on the semiconductor substrate may be of the back-illumination type or the front-illumination type.

[0090] If the photoelectric conversion layer contains an organic material, the photoelectric conversion layer can be configured according to any one of the following four aspects. (1) The photoelectric conversion layer contains a p-type organic semiconductor. (2) The photoelectric conversion layer contains an n-type organic semiconductor. (3) The photoelectric conversion layer includes a stacked structure of a p-type organic semiconductor layer / an n-type organic semiconductor layer. The photoelectric conversion layer includes a stacked structure of a p-type organic semiconductor layer / a mixed layer of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure) / an n-type organic semiconductor layer. The photoelectric conversion layer includes a stacked structure of a p-type organic semiconductor layer / a mixed layer of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure). The photoelectric conversion layer includes a stacked structure of an n-type organic semiconductor layer / a mixed layer of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure). (4) The photoelectric conversion layer contains a mixture of a p-type organic semiconductor and an n-type organic semiconductor (bulk heterostructure). However, the stacking order can be changed as desired.

[0091] Examples of the p-type organic semiconductor may include a naphthalene derivative, an anthracene derivative, a phenanthrene derivative, a pyrene derivative, a perylene derivative, a tetracene derivative, a pentacene derivative, a quinacridone derivative, a thiophene derivative, a thienothiophene derivative, a benzothiophene derivative, a benzothienobenzothiophene derivative, a triallylamine derivative, a carbazole derivative, a perylene derivative, a picene derivative, a chrysene derivative, a fluoranthene derivative, a phthalocyanine derivative, a subphthalocyanine derivative, a subporphyrazine derivative, a metal complex having a heterocyclic compound as a ligand, a polythiophene derivative, a polybenzothiadiazole derivative, a polyfluorene derivative, and the like. Examples of the n-type organic semiconductor may include a fullerene and a fullerene derivative. <zum Beispiel ein Fulleren wie etwa C60, C70 und C74 (ein Fulleren höherer Ordnung),an endohedral fullerene or the like) or a fullerene derivative (for example, a fullerene compound or a PCBM-fullerene compound, a fullerene multimer or the like), an organic semiconductor having larger (deeper) HOMO and LUMO than the p-type organic semiconductor, a transparent inorganic metal oxide and the like. Specific examples of the n-type organic semiconductor may include a heterocyclic compound containing nitrogen atoms, oxygen atoms, or sulfur atoms, for example, an organic molecule, an organic metal complex, or a subphthalocyanine derivative having as a molecular skeleton a pyridine derivative, a pyrazine derivative, a pyrimidine derivative, a triazine derivative, a quinoline derivative, a quinoxaline derivative, an isoquinoline derivative, an acridine derivative, a phenazine derivative, a phenanthroline derivative, a tetrazole derivative, a pyrazole derivative, an imidazole derivative, a thiazole derivative, an oxazole derivative,an imidazole derivative, a benzimidazole derivative, a benzotriazole derivative, a benzoxazole derivative, a benzoxazole derivative, a carbazole derivative, a benzofuran derivative, a dibenzofuran derivative, a subporphyrazine derivative, a polyphenylenevinylene derivative, a polybenzothiadiazole derivative, a polyfluorene derivative, or the like. Examples of a group and the like contained in the fullerene derivative may include a halogen atom, a linear, branched or cyclic alkyl group or phenyl group, a group containing a linear or aromatic condensed ring compound, a group containing a halogen compound, a partial fluoroalkyl group, a perfluoroalkyl group, a silylalkyl group, a silylalkoxy group, an arylsilyl group, an arylsulfanyl group, an alkylsulfanyl group, an arylsulfonyl group, an alkylsulfonyl group, an arylsulfide group, an alkylsulfide group, an amino group, an alkylamino group,an arylamino group, a hydroxy group, an alkoxy group, an acylamino group, an acyloxy group, a carbonyl group, a carboxy group, a carboxamide group, a carboalcoxy group, an acyl group, a sulfonyl group, a cyano group, a nitro group, a chalcogenide-containing group, a phosphine group, a phosphono group, and a derivative thereof. The thickness of the photoelectric conversion layer containing the organic material (sometimes referred to as an "organic photoelectric conversion layer") may be, for example, from 1 × 10, -8 up to 5 × 10 -7 m, preferably 2.5 × 10 -8 up to 3 × 10 -7 m, preferably 2.5 × 10 -8 up to 2 × 10 -7 m, more preferably 1 × 10 -7 up to 1.8 × 10 -7m. Note that organic semiconductors are often classified into p-type and n-type, that p-type means easy transport of holes, whereas n-type means easy transport of electrons, and that organic semiconductors are not limited to the interpretation that holes or electrons are contained as thermally excited majority charge carriers, as is the case with inorganic semiconductors.

[0092] Alternatively, examples of the material contained in the organic photoelectric conversion layer that photoelectrically converts green light may include a rhodamine-based pigment, a melacianine-based pigment, a quinacridone derivative, a subphthalocyanine-based pigment (subphthalocyanine derivative), and the like. Examples of the material contained in the photoelectric conversion layer that photoelectrically converts blue light may include a coumarinic acid pigment, a tris-8-hydroxyquinoline aluminum (Alq3), a merocyanine-based pigment, and the like. Examples of the material contained in the organic photoelectric conversion layer that photoelectrically converts red light may include a phthalocyanine-based pigment and a subphthalocyanine-based pigment (subphthalocyanine derivative).

[0093] Alternatively, examples of the inorganic material contained in the photoelectric conversion layer may include crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, or AgInSe2, which corresponds to a calcopalite compound; GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, which correspond to III-V family compounds; or a compound semiconductor such as CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS. In addition, quantum dots containing these materials may be used for the photoelectric conversion layer.

[0094] The solid-state imaging devices according to the first and second aspects of the present disclosure and the solid-state imaging devices of the first and second configurations can be used to configure a single-panel color solid-state imaging device.

[0095] In the solid-state imaging device according to the second aspect of the present disclosure including the stacked imaging element, unlike a solid-state imaging device including imaging elements in a Bayer array (that is, unlike a configuration that uses a color filter layer to separate light into blue light, green light, and red light), imaging elements sensitive to light of multiple types of wavelengths are stacked in the light incident direction within an identical pixel to form one pixel, which enables sensitivity and pixel density per unit volume to be improved. Furthermore, a high absorption coefficient of the organic material allows the film thickness of the organic photoelectric conversion layer to be made smaller than the film thickness of a conventional Si-based photoelectric conversion layer, thus reducing light leakage.-scattering from the neighboring pixel and relaxing a restriction on the light incidence angle. Furthermore, the known Si-based image pickup element performs interpolation processing between pixels for the three colors to generate a color signal, resulting in false colors. However, the solid-state image pickup device according to the second aspect, which includes the stacked image pickup element, suppresses possible false colors. The organic photoelectric conversion layer itself serves as a color filter layer, enabling color separation without disposing a color filter layer.

[0096] On the other hand, in the solid-state image pickup device according to the first aspect of the present disclosure, the use of the color filter layer allows requirements on spectral characteristics for blue, green, and red to be relaxed and achieves high mass productivity.Examples of the arrangement of image pickup elements in the solid-state image pickup device according to the first aspect of the present disclosure include, in addition to the Bayer arrangement, an interline arrangement, a G-stripe and RB checkerboard arrangement, a G-stripe and full RB checkerboard arrangement, a complementary color checkerboard arrangement, a striped arrangement, an oblique striped arrangement, a primary color difference arrangement, a field color difference sequential arrangement, a frame color difference sequential arrangement, a MOS arrangement, an enhanced MOS arrangement, a frame interleaved arrangement, and a field interleaved arrangement. Here, one image pickup element constitutes one pixel (or one subpixel).

[0097] As the color filter layer (wavelength selection means), a filter layer that transmits not only red, green, and blue, but also a specific wavelength such as cyan, magenta, or yellow, if desired, can be used. Instead of including a color filter layer based on an organic material containing an organic compound such as a pigment or dye, the color filter layer may comprise a photonic crystal, a wavelength selection element with an applied plasmon (a lattice structure of a conductor comprising a thin film of a conductor with a lattice-like hole structure; see, for example, Japanese Patent Laid-Open No. 2008-177191), or a thin film containing an inorganic material such as amorphous silicon.

[0098] The pixel region in which a plurality of the image pickup elements and the like of the present disclosure or a plurality of stacked image pickup elements in the present disclosure are arranged includes a plurality of pixels regularly arranged in a two-dimensional array. The pixel region typically includes an effective pixel region in which light is actually received and photoelectrically converted into a signal charge, and in which the signal charge is amplified and the amplified signal charge is read out to the driving circuit, and a black reference pixel region (also referred to as an optical black (OPB) pixel region) for outputting optical black corresponding to a reference for a black level. The black reference pixel region is typically arranged in an outer peripheral region of the effective pixel region.

[0099] In the image pickup element and the like including the various preferred configurations and arrangements described above, light is emitted to induce photoelectric conversion in the photoelectric conversion layer, causing carrier separation between holes and electrons. An electrode from which holes are extracted is assumed to be a positive electrode, and an electrode from which electrons are extracted is assumed to be a negative electrode. In some configurations, the first electrode forms a positive electrode, whereas the second electrode forms a negative electrode; and in other configurations, conversely, the first electrode forms a negative electrode, whereas the second electrode forms a positive electrode.

[0100] The first electrode, the charge storage electrode, the transfer control electrode, the charge transfer control electrode, the light-emitting electrode, and the second electrode may include a transparent conductive material. The first electrode, the charge storage electrode, the transfer control electrode, the charge transfer control electrode, and the charge-emitting electrode may be collectively referred to as "first electrode and the like." Alternatively, the image pickup element and the like of the present disclosure may be configured such that, in a case where the image pickup element and the like are arranged on a plane, for example, like the Bayer array, the second electrode includes a transparent conductive material and the first electrode and the like include a metal material, and in this case, specifically,that the second electrode located on the light incident side contains a transparent conductive material, and the first electrode and the like contain, for example, Al-Nd (an alloy of aluminum and neodymium) or ASC (an alloy of aluminum, samarium, and copper). The electrode containing the transparent conductive material may be referred to as a "transparent electrode." Here, the transparent conductive material desirably has a band gap energy of 2.5 eV or more, and preferably 3.1 eV or more. An example of the transparent conductive material contained in the transparent electrode includes a metal oxide having conductivity, and specific examples of the transparent conductive material contained in the transparent electrode include indium oxide, indium tin oxide (ITO containing Sn-doped In2O3, crystalline ITO, and amorphous ITO), indium zinc oxide (IZO) containing indium,which is added to zinc oxide as a dopant, indium gallium oxide (IGO) with indium added to gallium oxide as a dopant, indium gallium zinc oxide (IGZO, In-GaZnO4) with indium and gallium added to zinc oxide as dopants, indium tin zinc oxide (ITZO) with indium and tin added to zinc oxide as dopants, IFO (F-doped In2O3), tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (including ZnO doped with another element), aluminum zinc oxide (AZO) with aluminum added to zinc oxide as a dopant, gallium zinc oxide (GZO) with gallium added to zinc oxide as a dopant, titanium oxide (TiO2), niobium titanium oxide (TNO) with niobium added to titanium oxide as a dopant, Antimony oxide, CuI, InSbO4, ZnMgO, CuInO2, MgIn2O4, CdO, ZnSnO3, a spinel oxide, and an oxide with a YbFe2O4 structure. Alternatively, the transparent electrode can be gallium oxide, titanium oxide, niobium oxide,nickel oxide or the like as a mother layer. The transparent electrode may have a thickness ranging from 2 × 10, -8 m to 2 × 10 -7 m and preferably 3 × 10 -8 m to 1 × 10 -7 m is sufficient. If the first electrode is required to be transparent, the charge-emitting electrode preferably contains a transparent conductive material in order to simplify a manufacturing process.

[0101] Alternatively, in a case where transparency is not required, the conductive material included in a negative electrode including a function as an electron-withdrawing electrode preferably has a low work function (for example, φ = 3.5 to 4.5 eV), and specific examples of a conductive material may include an alkali metal (for example, Li, Na, K, and the like) and fluorides and oxides of the alkali metal, an alkaline earth metal (for example, Mg, Ca, and the like) and fluorides and oxides of the alkaline earth metal, aluminum (Al), zinc (Zn), tin (Sn), thallium (Tl), a sodium-potassium alloy, an aluminum-lithium alloy, a magnesium-silver alloy, indium, a rare earth metal such as ytterbium, or their alloys.Furthermore, the conductive material included in a positive electrode including a function as a hole-withdrawing electrode preferably has a high work function (for example, φ = 4.5 to 5.5 eV), and specific examples of such a conductive material may include gold (Au), silver (Ag), chromium (Cr), nickel (Ni), palladium (Pd), platinum (Pt), iron (Fe), iridium (Ir), germanium (Ge), osmium (Os), rhenium (Re), and tellurium (Te).Alternatively, examples of the material contained in the negative electrode and the positive electrode may include a metal such as platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co), and molybdenum (Mo), or alloys containing these metal elements, conductive particles containing such a metal, conductive particles of alloys containing such a metal, polysilicon containing impurities, carbon-based materials, oxide semiconductor materials, carbon nanotubes, conductive materials such as graphene, and the like, or may be stacked structures of layers containing these elements.Further, examples of the material contained in the negative electrode and the positive electrode may include organic materials (conductive polymers) such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid [PEDOT / PSS]. Furthermore, any of these conductive materials may be mixed with a binder (polymer) to form a paste or ink, which can then be cured and used as an electrode.

[0102] As a film formation method for the first electrode and the like and the second electrode (negative electrode or positive electrode), a dry process or a wet process can be used. Examples of the dry process may include physical vapor deposition (PVD) or chemical vapor deposition (CVD). Examples of a film formation method using PVD include vacuum deposition using resistance heating or high-frequency heating, EB (electron beam) deposition, various sputtering methods (magnetron sputtering method, RF-DC coupled bias sputtering method, ECR sputtering method, opposing target sputtering method, and high-frequency sputtering method), an ion plating method, a laser ablation method, a molecular beam epitaxy method, a laser transfer method, and the like.Furthermore, examples of CVD include plasma CVD, thermal CVD, metal organic (MO) CVD, optical CVD, and the like. On the other hand, examples of the wet process include an electroplating method, an electroless plating method, a spin coating method, an inkjet method, a spray coating method, a stamping method, a microcontact printing method, a flexographic printing method, an offset printing method, a gravure printing method, a dipping method, and the like. Examples of a patterning method include chemical etching such as shadow masking, laser transfer and photolithography, physical etching using an ultraviolet ray or laser, and the like. As the planarization technique for the first electrode and the like and the second electrode, a laser planarization method, a reflow method, and the like can be used.Reflow processes, CMP (chemical mechanical polishing) and the like can be used.

[0103] Examples of the material contained in the insulating layer include not only inorganic insulating materials, but also silicon oxide-based materials, silicon nitride (SiN Y) and high-dielectric-constant insulating materials made of a metal oxide such as aluminum oxide (Al2O3), but also organic insulating materials (organic polymer) exemplified by polymethyl methacrylate (PMMA); polyvinylphenol (PVP); polyvinyl alcohol (PVA); polyimide; polycarbonate (PC); polyethylene terephthalate (PET); polystyrene; silanol derivatives (silane coupling agents) such as N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), and octadecyltrichlorosilane (OTS); novolac-phenol resin; fluorine resin; and linear hydrocarbons such as octadecanethiol and dodecyl isocyanate, which contain a functional group at one end that can be bonded to a control electrode, or combinations thereof, can be used. Examples of the silicon oxide material include silicon oxide (SiO x), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin-on glass), and low-dielectric-constant insulating materials (e.g., polyarylether, cycloperfluorocarbon polymer, and benzocyclobutene, cyclic fluororesin, polytetrafluoroethylene, aryl fluoride ether, polyimide fluoride, amorphous carbon, and organic SOG). The insulating layer may have a single-layer configuration or a configuration in which multiple (e.g., two) layers are stacked.In the latter case, it is sufficient that an insulating underlayer is formed at least on the charge storage electrode and in a region between the charge storage electrode and the first electrode, that a planarization treatment is applied to the insulating underlayer such that the insulating underlayer is left at least in the region between the charge storage electrode and the first electrode, and that an insulating cap layer is formed on the remaining insulating underlayer and the charge storage electrode. Thus, planarization of the insulating layer can be reliably achieved. It is also sufficient to select the materials included in various interlayer insulating layers, protective material layers, and insulating material layers from these materials as needed.

[0104] The configurations and structures of the floating diffusion layer, amplification transistor, reset transistor, and selection transistor included in the control section may be similar to the configurations and structures of known floating diffusion layers, amplification transistors, reset transistors, and selection transistors. The drive circuit may also have a well-known configuration and structure.

[0105] The first electrode is connected to the floating diffusion layer and the gate section of the amplification transistor. It is sufficient to form a contact hole region to connect the first electrode to the floating diffusion layer and the gate section of the amplification transistor. Examples of materials included in the contact hole region include impurity-doped polysilicon, refractory metal, and metal silicide such as tungsten, Ti, Pt, Pd, Cu, TiW, TiN, TiNW, WSi2, and MoSi2, and stacked structures of layers containing these materials (for example, Ti / TiN / W).

[0106] A first carrier blocking layer may be provided between the oxide semiconductor layer and the first electrode, and a second carrier blocking layer may be provided between the organic photoelectric conversion layer and the second electrode. Further, a first electron injection layer may be provided between the first carrier blocking layer and the first electrode, and a second electron injection layer may be provided between the second carrier blocking layer and the second electrode. Examples of a material contained in the electron injection layer may include, for example, an alkali metal such as lithium (Li), sodium (Na), and potassium (K), fluorides and oxides of the alkali metal, an alkaline earth metal such as magnesium (Mg) and calcium (Ca), and fluorides and oxides of the alkali earth metal.

[0107] Examples of a film formation method for the various organic layers include a dry film formation method and a wet film formation method. Examples of the dry film formation method include vacuum deposition using resistance heating, high-frequency heating, or electron beam heating, flash deposition, plasma deposition, EB deposition, various sputtering methods (a bipolar sputtering method, a DC sputtering method, a DC magnetron sputtering method, a high-frequency sputtering method, a magnetron sputtering method, an RF-DC coupled bias sputtering method, an ECR sputtering method, an opposed target sputtering method, a high-frequency sputtering method, and an ion beam sputtering method), a DC (direct current) method, an RF method, a multiple negative electrode method, and an activation reaction method.Electrolytic deposition, various ion plating methods such as radiofrequency ion plating and reactive ion plating, laser ablation, laser transfer, and molecular beam epitaxy (MBE) methods. Furthermore, examples of CVD include plasma CVD, thermal CVD, MOCVD, and optical CVD. On the other hand, specific examples of wet processes include spin coating, dipping, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, stamping, spraying, and various coating methods such as air-doctor coating.a blade coater process, a rod coater process, a knife coater process, a squeeze coater process, a reverse roll coater process, a transfer roll coater process, a gravure coater process, a kiss coater process, a cast coater process, a spray coater process, a slot coater process, and a calender coater process. Examples of a solvent for the coating process include non-polarity or low-polarity organic solvents such as toluene, chloroform, hexane, and ethanol. Examples of the patterning process include chemical etching such as shadow masking, laser transfer, and photolithography.Physical etching using an ultraviolet ray or a laser, etc. A laser planarization process or a reflow process can be used as a planarization technique for the various organic layers.

[0108] As described above, the image pickup element or solid-state image pickup device may be provided with an on-chip microlens or a light-shielding layer, and may be provided with a drive circuit and wiring for driving the image pickup element as necessary. A diaphragm for controlling the incidence of light on the image pickup element may be provided, or an optical cut filter may be provided as necessary according to the purpose of the solid-state image pickup device.

[0109] Furthermore, the solid-state imaging devices of the first and second configurations may be configured such that an on-chip microlens is disposed above one of the imaging elements and the like of the present disclosure, or such that an imaging element block includes two of the imaging elements and the like of the present disclosure, with an on-chip microlens being disposed above the imaging element block.

[0110] For example, in a case where the solid-state image pickup device and a readout integrated circuit (ROIC) are stacked, the stacking may be achieved by placing a drive substrate provided with the readout integrated circuit, a connecting section including copper (Cu), and the image pickup element provided with a connecting section on top of each other to bring the connecting sections into contact with each other, and then connecting the connecting sections, or the connecting sections may be connected using a solder bump.

[0111] Furthermore, a driving method for driving the solid-state image pickup devices according to the first and second aspects of the present disclosure may be a driving method for the solid-state image pickup device that repeats the steps in which in all the image pickup elements, charge in the first electrode is emitted to the outside of the system at the same time, while charge is stored in the oxide semiconductor layer (or the oxide semiconductor layer and the photoelectric conversion layer), and then in all the image pickup elements, the charge stored in the oxide semiconductor layer (or the oxide semiconductor layer and the photoelectric conversion layer) is transferred to the first electrode simultaneously, and after the transfer is completed, the charge transferred to the first electrode is sequentially read out in each of the image pickup elements.

[0112] In such a driving method for the solid-state image pickup device, each of the image pickup elements has a structure in which incident light from the second electrode side does not enter the first electrode, and in all the image pickup elements, the charge in the first electrode is emitted to the outside of the system while charge is stored in the oxide semiconductor layer and the like, thus enabling the first electrode in all the image pickup elements to be reliably reset simultaneously. Then, in all the image pickup elements, the charge stored in the oxide semiconductor layer and the like is simultaneously transferred to the first electrode, and after the transfer is completed, the charge transferred to the first electrode in each image pickup element is simultaneously read out. Thus, what is called a general aperture function can be easily achieved.

[0113] The image pickup element and the solid-state image pickup device of Embodiment 1 will be described in detail below.

[0114] The image pickup element 10 of Embodiment 1 further includes a semiconductor substrate (more concretely, a silicon semiconductor layer) 70, and the photoelectric conversion section is disposed above the semiconductor substrate 70. In addition, the image pickup element 10 further includes a control section provided on the semiconductor substrate 70 and including a drive circuit to which the first electrode 21 and the second electrode 22 are connected. Here, it is assumed that the light incident surface of the semiconductor substrate 70 faces in the upward direction, whereas the opposite side of the semiconductor substrate 70 is assumed to face in the downward direction. A wiring layer 62 including a plurality of wiring patterns is provided below the semiconductor substrate 70.

[0115] The semiconductor substrate 70 is provided with at least the floating diffusion layer FD1 and an amplifying transistor TR1 amp which are included in the control section, and the first electrode 21 is connected to the floating diffusion layer FD1 and a gate section of the amplifying transistor TR1 amp The semiconductor substrate 70 is further connected to a reset transistor TR1 rst and a selection transistor TR1 sel which are contained in the control section. The floating diffusion layer FD1 is connected to one of the source / drain regions of the reset transistor TR1 rst connected, the other source / drain region of the amplifying transistor TR1 amp is connected to one of the source / drain regions of the selection transistor TR1 sel connected, and the other source / drain region of the selection transistor TR1 sel is connected to a signal line VSL1. The amplification transistor TR1 amp, the reset transistor TR1 rst and the selection transistor TR1 sel are included in the control circuit.

[0116] Specifically, the image pickup element and the stacked image pickup element of Embodiment 1 are a back-illumination type image pickup element and a stacked image pickup element and have a structure including three image pickup elements stacked on top of each other.The three image pickup elements include a first-type green light image pickup element in Embodiment 1, which includes the first-type green light photoelectric conversion layer that absorbs green light and is sensitive to green light (hereinafter referred to as the "first image pickup element"), the known second-type blue light image pickup element, which includes the second-type blue light photoelectric conversion layer that absorbs blue light and is sensitive to blue light (hereinafter referred to as the "second image pickup element"), and the known second-type red light image pickup element, which includes the second-type red light photoelectric conversion layer that absorbs red light and is sensitive to red light (hereinafter referred to as the "third image pickup element").A red light image pickup element 12 (third image pickup element) and a blue light image pickup element 11 (second image pickup element) are provided in the semiconductor substrate 70, and the second image pickup element 11 is located on the light incident side with respect to the third image pickup element 12. Furthermore, the green light image pickup element (first image pickup element 10) is provided above the blue light image pickup element (second image pickup element 11). The stacked structure of the first image pickup element 10, the second image pickup element 11, and the third image pickup element 12 forms a pixel. No color filter layer is provided.

[0117] In the first image pickup element 10, the first electrode 21 and the charge storage electrode 24 are formed on the interlayer insulating layer 81 and spaced from each other. The interlayer insulating layer 81 and the charge storage electrode 24 are covered with the insulating layer 82. The oxide semiconductor layer 23C, the oxide film 23B, and the photoelectric conversion layer 23A are formed on the insulating layer 82, and the second electrode 22 is formed on the photoelectric conversion layer 23A. The entire surface including the second electrode 22 is provided with a protective material layer 83, and an on-chip microlens 14 is provided on the protective material layer 83. No color filter layer is provided. The first electrode 21, the charge storage electrode 24 and the second electrode 22 each contain, for example, a transparent electrode containing ITO (work function: approximately 4.4 eV).The oxide semiconductor layer 23C and the oxide film 23B contain the above-described material, and the photoelectric conversion layer 23A contains a layer containing a well-known organic photoelectric conversion material that is sensitive to at least green light (for example, a rhodamine-based pigment, a merocyanine-based pigment, an organic material such as quinacridone). The interlayer insulating layer 81, the insulating layer 82, and the protective material layer 83 contain a well-known insulating material (for example, SiO2 or SiN). The oxide semiconductor layer 23C and the first electrode 21 are connected by a connecting section 67 provided on the insulating layer 82. The oxide semiconductor layer 23C extends through the connecting section 67.Specifically, the oxide semiconductor layer 23C extends through an opening 84 formed in the insulating layer 82 and is connected to the first electrode 21.

[0118] The charge storage electrode 24 is connected to the drive circuit. Specifically, the charge storage electrode 24 is connected via a connection hole 66, a pad region 64, and a wiring V OA provided in the interlayer insulating film 81 are connected to a vertical drive circuit 112 included in the drive circuit.

[0119] The charge storage electrode 24 is larger in size than the first electrode 21. Assuming that s1' denotes the area of the charge storage electrode 24 and that s1 denotes the area of the first electrode 21, preferably 4≤s1' / s1 which is not limiting. For example, in embodiment 1, s1' / s1=8 set up, which is not restrictive.

[0120] An element isolation region 71 is formed on the first surface (front surface) 70A side of the semiconductor substrate 70, and an insulating material layer 72 is formed on the first surface 70A of the semiconductor substrate 70. Further, on the first surface side of the semiconductor substrate 70, the reset transistor TR1 rst , the amplifying transistor TR1 amp and the selection transistor TR1 sel included in the control section of the image pickup element 10, and further the first floating diffusion layer FD1 is provided.

[0121] The reset transistor TR1 rst includes a gate section 51, a channel formation region 51A, and source / drain regions 51B and 51C. The gate section 51 of the reset transistor TR1 rstis connected to a reset line RST1, and the source / drain region 51C, which is one of the source / drain regions of the reset transistor TR1 rst also serves as the first floating diffusion layer FD1. The other source / drain region 51B is connected to a power supply V DD tied together.

[0122] The first electrode 21 is connected to the one source / drain region 51C (the first floating diffusion layer FD1) of the reset transistor TR1 via a connection hole 65 and a pad region 63 provided in the interlayer insulating film 81, a contact hole region 61 formed in the semiconductor substrate 70 and an interlayer insulating film 76, and the wiring layer 62 formed in the interlayer insulating film 76. rst tied together.

[0123] The amplifying transistor TR1 ampincludes a gate section 52, a channel formation region 52A, and source / drain regions 52B and 52C. The gate section 52 is connected via the wiring layer 62 to the first electrode 21 and the one source / drain region 51C (the first floating diffusion layer FD1) of the reset transistor TR1 rst In addition, the source / drain region 52B, which is one of the source / drain regions, is connected to the power supply V DD tied together.

[0124] The selection transistor TR1 sel includes a gate section 53, a channel formation region 53A, and source / drain regions 53B and 53C. The gate section 53 is connected to a selection line SEL1. In addition, the source / drain region 53B, which is one of the source / drain regions, shares a region with the other source / drain region 52C, which is formed in the amplification transistor TR1. amp and the other source / drain region 53C is connected to the signal line (data output line) VSL1 (117).

[0125] The second image pickup element 11 includes an n-type semiconductor region 41 as a photoelectric conversion layer provided in the semiconductor substrate 70. A gate section 45 of a transfer transistor TR2 trs , which includes a vertical transistor, extends to the n-type semiconductor region 41 and is connected to a transfer gate line TG2. Furthermore, the second floating diffusion layer FD2 is formed in a region 45C of the semiconductor substrate 70 near the gate section 45 of the transfer transistor TR2. trs A charge stored in the n-type semiconductor region 41 is read out to the second floating diffusion layer FD2 via a transfer channel formed along the gate section 45.

[0126] In the second image pickup element 11, a reset transistor TR2 rst , an amplifying transistor TR2 amp and a selection transistor TR2 selincluded in a control section of the second image pickup element 11 are provided on the first surface side of the semiconductor substrate 70.

[0127] The reset transistor TR2 rst contains a gate section, a channel formation region, and source / drain regions. The gate section of the reset transistor TR2 rst is connected to a reset line RST2, one of the source / drain regions of the reset transistor TR2 rst is connected to the power supply V DD and the other source / drain region also serves as the second floating diffusion layer FD2.

[0128] The amplification transistor TR2 amp contains a gate section, a channel formation region, and source / drain regions. The gate section is connected to the other source / drain region (the second floating diffusion layer FD2) of the reset transistor TR2 rstIn addition, one of the source / drain regions is connected to the power supply V DD tied together.

[0129] The selection transistor TR2 sel contains a gate section, a channel formation region, and source / drain regions. The gate section is connected to a selection line SEL2. Furthermore, one of the source / drain regions shares a region with the other source / drain region, which is located in the amplification transistor TR2. amp and the other source / drain region is connected to a signal line (data output line) VSL2.

[0130] The third image pickup element 12 includes an n-type semiconductor region 43 provided in the semiconductor substrate 70 as a photoelectric conversion layer. A gate section 46 of a transfer transistor TR3 trsis connected to a transfer gate line TG3. In addition, the third floating diffusion layer FD3 is formed in a region 46C of the semiconductor substrate 70 near the gate section 46 of the transfer transistor TR3. trs A charge stored in the n-type semiconductor region 43 is read out to the third floating diffusion layer FD3 via a transfer channel 46A formed along the gate section 46.

[0131] The third image pickup element 12 also includes a reset transistor TR3 rst , an amplifying transistor TR3 amp and a selection transistor TR3 sel included in a control section of the third image pickup element 12 are provided on the first surface side of the semiconductor substrate 70.

[0132] The reset transistor TR3 rst contains a gate section, a channel formation region, and source / drain regions. The gate section of the reset transistor TR3 rstis connected to a reset line RST3, one of the source / drain regions of the reset transistor TR3 rst is connected to the power supply V DD and the other source / drain region also serves as the third floating diffusion layer FD3.

[0133] The amplification transistor TR3 amp contains a gate section, a channel formation region, and source / drain regions. The gate section is connected to the other source / drain region (the third floating diffusion layer FD3) of the reset transistor TR3 rst In addition, one source / drain region is connected to the power supply V DD tied together.

[0134] The selection transistor TR3 sel contains a gate section, a channel formation region, and source / drain regions. The gate section is connected to a selection line SEL3. Furthermore, one of the source / drain regions shares a region with the other source / drain region, which is located in the amplification transistor TR3.amp and the other source / drain region is connected to a signal line (data output line) VSL3.

[0135] The reset lines RST1, RST2 and RST3, the select lines SEL1, SEL2 and SEL3 and the transfer gate lines TG2 and TG3 are connected to the vertical drive circuit 112 included in the drive circuit, and the signal lines (data output lines) VSL1, VSL2 and VSL3 are connected to a column signal processing circuit 113 included in the drive circuit.

[0136] A p + -layer 44 is provided between the n-type semiconductor region 43 and the front surface 70A of the semiconductor substrate 70 to suppress a possible dark current. A p + -layer 42 is provided between the n-type semiconductor region 41 and the n-type semiconductor region 43, and a part of side surfaces of the n-type semiconductor region 43 is covered by the p+ -Layer 42. A p + -layer 73 is provided on the surface of a back surface 70B of the semiconductor substrate 70, and an HfO2 film 74 and an insulating material film 75 are provided from the p + Layer 73 is formed up to a region within the semiconductor substrate 70 where the contact hole region 61 is to be formed. The interlayer insulating layer 76 includes wiring formed over a plurality of layers; however, illustration of the wiring is omitted.

[0137] The HfO2 film 74 is a film with a negative fixed charge, and providing such a film allows suppression of a possible dark current.The HfO2 film can be replaced by an aluminum oxide (Al2O3) film, a zirconium oxide (ZrO2) film, a tantalum oxide (Ta2O5) film, a titanium oxide (TiO2) film, a lanthanum oxide (La2O3) film, a praseodymium oxide (Pr2O3) film, a cerium oxide (CeO2) film, a neodymium oxide (Nd2O3) film, a promethium oxide (Pm2O3) film, a samarium oxide (Sm2O3) film, a europium oxide (Eu2O3) film, a gadolinium oxide (Gd2O3) film, a terbium oxide (Tb2O3) film, a dysprosium oxide (Dy2O3) film, a holmium oxide (Ho2O3) film, a thulium oxide (Tm2O3) film, a ytterbium oxide (Yb2O3) film, a lutetium oxide film (Lu2O3), a film of yttrium oxide (Y2O3), a film of hafnium nitride, an aluminum nitride film, a film of hafnium oxynitride, or an aluminum oxynitride film. Examples of film formation processes for these films may include CVD, PVD, and ALD.

[0138] Now, with reference to Fig. 6 and Fig. 7A describes operations of the stacked image pickup element (first image pickup element 10) including the charge storage electrode according to Embodiment 1. The image pickup element of Embodiment 1 is provided in the semiconductor substrate 70 and further includes the control section with the drive circuit, and the first electrode 21, the second electrode 22, and the charge storage electrode 24 are connected to the drive circuit. Here, the first electrode 21 has a higher potential than the second electrode 22. Specifically, the first electrode 21 has a positive potential, whereas the second electrode 22 has a negative potential, and a charge generated by photoelectric conversion in the photoelectric conversion layer 23A is read out to, for example, the floating diffusion layer. This applies similarly to the other embodiments.Note that in a configuration in which the first electrode 21 has a negative potential, whereas the second electrode 22 has a positive potential, and in which holes generated by photoelectric conversion in the photoelectric conversion section are read out to the floating diffusion layer, it is sufficient to exchange the magnitude relationship of the potentials described below.

[0139] In Fig. 6 and Fig. 21 and Fig. 22 Reference numerals used in Embodiment 5 described below are as follows. P A Potential at a point P A in a region of the photoelectric conversion section opposite to a region located midway between the charge storage electrode 24 or transfer control electrode (charge transfer electrode) 25 and the first electrode 21 P B Potential at a point P B in an area of the photoelectric conversion section opposite the charge storage electrode 24 P C Potential at a point P C in an area of the photoelectric conversion section opposite to the transfer control electrode (charge transfer electrode) 25 FD Potential an der ersten Floating-Diffusionsschicht FD1 V OA Potential at the charge storage electrode 24 V OT Potential at the transfer control electrode (charge transfer electrode) 25 RST Potential at the gate section 51 of the reset transistor TR1 rst V DD Potential of the power supply VSL 1 signal line (data output line) VSL1 TR1 rst Reset transistor TR1 rst TR1 amp Amplification transistor TR1 amp TR1 sel Selection transistor TR1 sel

[0140] The control circuit sets the potential V during the charge storage period 11 to the first electrode 21 and applies the potential V 31to the charge storage electrode 24. Light incident on the photoelectric conversion layer 23A induces photoelectric conversion in the photoelectric conversion layer 23A. Holes generated by the photoelectric conversion are fed via the wiring V OU from the second electrode 22 to the drive circuit. On the other hand, since the first electrode 21 has a higher potential than the second electrode 22, in other words, for example, a positive potential is applied to the first electrode 21, whereas a negative potential is applied to the second electrode 22, V 31 ≥ V 11 , preferably V 31 > V 11, is satisfied. Accordingly, electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and deposited in the oxide semiconductor layer 23C, in the oxide semiconductor layer 23C and the photoelectric conversion layer 23A, or in the oxide semiconductor layer 23C, the oxide film 23B, and the photoelectric conversion layer 23A (hereinafter collectively referred to as the “oxide semiconductor layer 23C and the like”) facing the charge storage electrode 24. In other words, charge is stored in the oxide semiconductor layer 23C and the like. Since V 31 > V 11is satisfied, electrons generated inside the photoelectric conversion layer 23A are prevented from migrating toward the first electrode 21. As time elapses for photoelectric conversion, the regions of the oxide semiconductor layer 23C and the like opposite to the charge storage electrode 24 have a potential with a more negative value.

[0141] During the later phase of the charge storage period, a reset operation is performed. This resets the potential of the first floating diffusion layer FD1 to make the potential of the first floating diffusion layer FD1 equal to the potential V DD to set up.

[0142] After the reset operation is completed, charge is read out. Specifically, the control circuit sets the potential V during the charge transfer period. 12 to the first electrode 21 and applies the potential V 32to the charge storage electrode 24. Here it is assumed that V 32 < V 12 is satisfied. Thus, the electrons deposited in the regions of the oxide semiconductor layer 23C and the like opposite to the charge storage electrode 24 are read out to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, the charge stored in the oxide semiconductor layer 23C and the like is read out to the control section.

[0143] The sequence of operations including charge storage, reset operation, and charge transfer is completed as described above.

[0144] Operations of the amplifying transistor TR1 amp and the selection transistor TR1 selafter reading out the electrons to the first floating diffusion layer FD1 are the same as the corresponding operations of known transistors. Furthermore, the sequence of operations of the second image pickup element 11 and the third image pickup element 12, including charge storage, reset, and charge transfer, is similar to the known sequence of operations including charge storage, reset, and charge transfer. Furthermore, reset noise in the first floating diffusion layer FD1 can be removed by correlated double sampling (CDS) processing as in the related art.

[0145] As described above, in Embodiment 1, the charge storage electrode is provided, which is spaced apart from the first electrode and arranged to oppose the photoelectric conversion layer via the insulating layer. Thus, when the photoelectric conversion layer is irradiated with light and photoelectric conversion is induced in the photoelectric conversion layer, a kind of capacitor is formed by the oxide semiconductor layer and the like, the insulating layer, and the charge storage electrode, allowing charge to be stored in the oxide semiconductor layer and the like. Consequently, when exposure is started, the charge storage section can be completely depleted, allowing charge to be erased.This allows for suppression of a potential phenomenon in which kTC noise becomes louder, random noise degrades, and the quality of captured images is reduced. Furthermore, all pixels can be reset simultaneously, enabling what is known as a global aperture function.

[0146] Fig.Figure 8 illustrates a conceptual diagram of the solid-state imaging device of Embodiment 1. A solid-state imaging device 100 of Embodiment 1 includes an imaging region 111 in which stacked imaging elements 101 are arranged in a two-dimensional array, and a vertical drive circuit 112, column signal processing circuits 113, a horizontal drive circuit 114, an output circuit 115, a drive control circuit 116, and the like, which are used as drive circuits (peripheral circuits) for the imaging region 111. These circuits may comprise well-known circuits and may, of course, include other circuit configurations (for example, various circuits used in known CCD imaging devices and CMOS imaging devices). Fig.8, a reference numeral “101” for the stacked image pickup element is shown in only one row.

[0147] The drive control circuit 116 generates clock signals and control signals based on a vertical synchronizing signal, a horizontal synchronizing signal, and a master clock. These clock signals and control signals are used as references for the operations of the vertical drive circuit 112, the column signal processing circuits 113, and the horizontal drive circuit 114. The generated clock signals and control signals are input to the vertical drive circuit 112, the column signal processing circuits 113, and the horizontal drive circuit 114.

[0148] The vertical drive circuit 112 includes, for example, a shift register for selecting and scanning the respective stacked image pickup elements 101 in the image pickup area 111 in units of rows in the vertical direction. A pixel signal (image signal) based on a current (signal) generated according to the amount of light received in each stacked image pickup element 101 is transmitted to the column signal processing circuits 113 via the signal lines (data output lines) 117 and VSL.

[0149] The column signal processing circuits 113 are arranged, for example, for the respective columns of the stacked image pickup elements 101 and utilize signals from black reference pixels (which, although not shown, are formed around an effective pixel area) for the respective image pickup elements to perform signal processing such as noise reduction and signal amplification on image signals output from the stacked image pickup elements 101 in a row. A horizontal selection switch (not shown) is connected to an output stage of the column signal processing circuits 113 between the output stage and a horizontal signal line 118.

[0150] The horizontal drive circuit 114 includes, for example, a shift register and sequentially outputs horizontal scanning pulses to sequentially select the column signal processing circuits 113, and each of the column signal processing circuits 113 outputs a signal to the horizontal signal line 118.

[0151] The output circuit 115 performs signal processing on signals sequentially input from the column signal processing circuits 113 via the horizontal signal line 118 and outputs the resultant signals.

[0152] As in Fig. 9, which is an equivalent circuit diagram of a modified example of the image pickup element and the stacked image pickup element of the embodiment 1, and as shown in Fig.10, which is a schematic layout diagram of the first electrode and the charge storage electrode and transistors included in the control section, the other source / drain region 51B of the reset transistor TR1 rst , instead of the power supply V DD to be connected, to be grounded.

[0153] The image pickup element and the stacked image pickup element of Embodiment 1 can be manufactured, for example, by the following method. Specifically, an SOI substrate is first prepared. Then, based on an epitaxial growth method, a first silicon layer is formed on a front surface of the SOI substrate, and the p +-layer 73 and the n-type semiconductor region 41 are formed on the first silicon layer. A second silicon layer is then formed on the first silicon layer based on the epitaxial growth method, and the element isolation region 71, the insulating material layer 72, the p + -layer 42, the n-type semiconductor region 43 and the p +-layer 44 are formed on the second silicon layer. Furthermore, various transistors and the like included in the control section of the image pickup element are formed on the second silicon layer, and the wiring layer 62, the interlayer insulating layer 76, and various wiring patterns are further formed on the transistors. Subsequently, the interlayer insulating layer 76 is bonded to a support substrate (not shown). The SOI substrate is then removed to expose the first silicon layer. A front surface of the second silicon layer corresponds to the front surface 70A of the semiconductor substrate 70, and a front surface of the first silicon layer corresponds to the back surface 70B of the semiconductor substrate 70. Furthermore, the first silicon layer and the second silicon layer are collectively represented as the semiconductor substrate 70.An opening for forming the contact hole region 61 is then formed on the back surface 70B side of the semiconductor substrate 70, the HfO2 film 74, the insulating material film 75, and the contact hole region 61 are formed, and the pad regions 63 and 64, the interlayer insulating layer 81, the connection holes 65 and 66, the first electrode 21, the charge storage electrode 24, and the insulating layer 82 are further formed. The connection section 67 is then opened, and the oxide semiconductor layer 23C, the oxide film 23B, the photoelectric conversion layer 23A, the second electrode 22, the protective material layer 83, and the on-chip microlens 14 are formed. The above-described operations enable the image pickup element and the stacked image pickup element of Embodiment 1 to be obtained.

[0154] Furthermore, although not shown, the insulating layer 82 may have a two-layer configuration of an under-insulating layer and an over-insulating layer. Specifically, it is sufficient that the under-insulating layer is formed at least on the charge storage electrode 24 and in a region between the charge storage electrode 24 and the first electrode 21 (more specifically, the under-insulating layer is formed on the interlayer insulating layer 81 including the charge storage electrode 24), and that, after a planarization treatment is performed on the under-insulating layer, the over-insulating layer is formed on the under-insulating layer and the charge storage electrode 24. Consequently, planarization of the insulating layer 82 can be reliably achieved. After that, it is sufficient to open the connection section 67 in the thus-obtained insulating layer 82.

[0155] Fig.11 illustrates a schematic layout diagram of another modified example of the first electrode and the charge storage electrode included in the image pickup element of Embodiment 1, and in this example, a common first electrode 21 is provided in the four image pickup elements so as to correspond to the four charge storage electrodes 24. Embodiment 2

[0156] Embodiment 2 is a modification of Embodiment 1. In Embodiment 1, the oxide film 23B contained, for example, a metal oxide such as TiO2 with a thickness of 10 nm, and the oxide semiconductor layer 23C contained, for example, IGZO with a thickness of 50 nm. On the other hand, in Embodiment 2, 1.58 atomic % of silicon (Si) was added to the oxide film 23B containing TiO2. Specifically, an operation in which a desired number of TiO2 layers each having a thickness equal to one atomic layer is stacked on the oxide semiconductor layer 23C based on ALD, and then an Si layer with a thickness equal to a desired one atomic layer is formed on the layer based on ALD is repeated a desired number of times. Thereafter, a heat treatment is performed, whereby the oxide film 23B containing TiO2 with this added Si is obtained.However, it is not limited to such a method, and for example, the oxide film can be formed based on a common sputtering method.

[0157] Adding Si to the oxide film 23B containing TiO2 allows crystallization of the oxide film to be suppressed, for example, during a heat treatment at 350°C in a process for manufacturing an image pickup element. When the number of crystal particles per unit area in a TiO2 film to which no silicon (Si) was added was assumed to be "1.00," the number of crystal particles per unit area in a TiO2 film to which silicon (Si) was added was 0.043. This shows that the number of crystal particles per unit area in the TiO2 film to which silicon (Si) was added is significantly smaller than the number of crystal particles per unit area in the TiO2 film to which no silicon (Si) was added. Note that similar effects were successfully obtained by adding niobium (Nb), tungsten (W), zirconium (Zr), aluminum (Ar), carbon (C), or nitrogen (N). Embodiment 3

[0158] Embodiment 3 is a modification of Embodiments 1 and 2. An image pickup element and a stacked image pickup element of Embodiment 3, which are shown in a schematic partial cross-sectional view in Fig.12 are an image pickup element and a stacked image pickup element of the front illumination type and have a structure in which three image pickup elements are stacked.The three image pickup elements include the first-type green light image pickup element in Embodiments 1 and 2, which includes the first-type green light photoelectric conversion layer that absorbs green light and is sensitive to green light (the first image pickup element 10), the known second-type blue light image pickup element, which includes the second-type blue light photoelectric conversion layer that absorbs blue light and is sensitive to blue light (the second image pickup element 11), and the known second-type red light image pickup element, which includes the second-type red light photoelectric conversion layer that absorbs red light and is sensitive to red light (the third image pickup element 12).The red light image pickup element (the third image pickup element 12) and the blue light image pickup element (the second image pickup element 11) are provided in the semiconductor substrate 70, and the second image pickup element 11 is located on the light incident side with respect to the third image pickup element 12. Furthermore, the green light image pickup element (the first image pickup element 10) is provided above the blue light image pickup element (the second image pickup element 11).

[0159] Fig. 17, Fig. 24, Fig. 39, Fig. 40, Fig. 41 and Fig. 42 represent the oxide film 23B and the oxide semiconductor layer 23C together with a reference numeral 23D, and Fig. 26, Fig. 32, Fig. 33A, Fig. 33B, Fig. 36A and Fig.36B illustrate the photoelectric conversion layer 23A, the oxide film 23B, and the oxide semiconductor layer 23C together as “photoelectric conversion stack 23.”

[0160] The front surface 70A side of the semiconductor substrate 70 is provided with various transistors included in the control section, similar to Embodiment 1. The transistors may have configurations and structures substantially similar to those described in Embodiment 1. Furthermore, the semiconductor substrate 70 is provided with the second image pickup element 11 and the third image pickup element 12, and these image pickup elements also have configurations and structures substantially similar to the configurations and structures of the second image pickup element 11 and the third image pickup element 12 described in Embodiment 1.

[0161] The interlayer insulating layer 81 is formed above the front surface 70A of the semiconductor substrate 70, and the first electrode 21, the oxide semiconductor layer 23C, the oxide film 23B, the photoelectric conversion layer 23A, the second electrode 22, the charge storage electrode 24, and the like are provided above the interlayer insulating layer 81, similar to the image pickup elements of Embodiments 1 and 2.

[0162] In this way, the image pickup element and the stacked image pickup element of Embodiment 3 can have a configuration and structure similar to the configurations and structures of the image pickup elements and the stacked image pickup elements of Embodiments 1 and 2, except that the image pickup element and the stacked image pickup element of Embodiment 3 are of the front illumination type, and thus, detailed descriptions of the configuration and structure of the image pickup element and the stacked image pickup element of Embodiment 3 are omitted. Embodiment 4

[0163] Embodiment 4 is a modification of Embodiments 1 to 3.

[0164] An image pickup element and a stacked image pickup element of embodiment 4, which are shown in a schematic partial cross-sectional view in Fig.13 are of the backlight type and have a structure in which two image pickup elements of the first image pickup element 10 of the first type according to Embodiment 1 and the third image pickup element 12 of the second type are stacked. In addition, a modified example of the image pickup element and the stacked image pickup element of Embodiment 4, which are shown in a schematic partial sectional view in Fig.14, is of the front-side illumination type and has a structure in which two image pickup elements of the first image pickup element 10 of the first type according to Embodiment 1 and the third image pickup element 12 of the second type are stacked. Here, the first image pickup element 10 absorbs light of a primary color, and the third image pickup element absorbs light of a complementary color. Alternatively, the first image pickup element 10 absorbs white light, and the third image pickup element absorbs infrared light.

[0165] A modified example of the image pickup element and the stacked image pickup element of Embodiment 4 shown in a schematic partial cross-sectional view in Fig.15 is of the back-illumination type and includes the first image pickup element 10 of the first type according to Embodiment 1. In addition, a modified example of the image pickup element and the stacked image pickup element of Embodiment 4, which are shown in a schematic partial cross-sectional view in Fig.16, is of the front-side illumination type and includes the first image pickup element 10 of the first type according to Embodiment 1. Here, the first image pickup element 10 includes three types of image pickup elements, including a red light absorbing image pickup element (red light image pickup element), a green light absorbing image pickup element (green light image pickup element), and a blue light absorbing image pickup element (blue light image pickup element). Further, a plurality of these image pickup elements are included in the solid-state image pickup device according to the first aspect of the present disclosure. An arrangement of a plurality of these image pickup elements may be a Bayer array.

[0166] Instead of providing one first-type image pickup element according to Embodiment 1, two first-type image pickup elements according to Embodiment 1 (that is, two photoelectric conversion sections are stacked, and the semiconductor substrate is provided with a control section for the two photoelectric conversion sections) or three first-type image pickup elements according to Embodiment 1 (that is, three photoelectric conversion sections are stacked, and the semiconductor substrate is provided with a control section for the three photoelectric conversion sections) may be stacked. A table below illustrates examples of stacked structures of first-type image pickup elements and second-type image pickup elements. First type Second type Back-lit type and front-lit type 1 Green 2 Blue + Red 1 primary color 1 complementary color 1 White 1 Infrared rays 2 Green + infrared light 2 Blue + Red 2 Green + Blue 1 Red 2 White + Infrared Light 0 3 Green + Blue + Red 2 Blue-Green (Emerald color) + Infrared light 3 Green + Blue + Red 1 infrared light 3 Blue + Green + Red 0 Embodiment 5

[0167] Embodiment 5 is a modification of Embodiments 1 to 4 and relates to the image pickup element and the like including the transfer control electrode (charge transfer electrode) of the present disclosure. Fig. 17 illustrates a schematic partial cross-sectional view of a part of the image pickup element and the stacked image pickup element of Embodiment 5. Fig. 18 and Fig. 19 illustrate equivalent circuits of the image pickup element and the stacked image pickup element of Embodiment 5. Fig. 20 illustrates a layout diagram of a first electrode, a transfer control electrode, and a charge storage electrode included in the image pickup element of Embodiment 5, and transistors included in a control section. Fig. 21 and Fig.22 schematically illustrate the state of potentials at respective sections during operations of the image pickup element of Embodiment 5. Fig. 7B is an equivalent circuit diagram for describing the respective sections of the image pickup element of Embodiment 5.

[0168] The image pickup element and the stacked image pickup element of Embodiment 5 further includes a transfer control electrode (charge transfer electrode) 25 disposed between the first electrode 21 and the charge storage electrode 24 at a distance from the first electrode 21 and the charge storage electrode 24 and arranged to oppose the oxide semiconductor layer 23C via the insulating layer 82. The transfer control electrode 25 is connected to the oxide semiconductor layer 23C via a connection hole 68B, a pad region 68A, and a wiring V OTprovided in the interlayer insulating film 81 are connected to a pixel driving circuit included in a driving circuit.

[0169] With reference to Fig. 21 and Fig. 22, operations of the image pickup element of Embodiment 5 (the first image pickup element 10) will be described below. Note that Fig. 21 and Fig. 22 specifically in the values of the potential applied to the charge storage electrode 24 and the potential at the point P C differ from each other.

[0170] The control circuit applies the potential V 11 to the first electrode 21, applies the potential V 31 to the charge storage electrode 24 and applies a potential V 51to the transfer control electrode 25. Light incident on the photoelectric conversion layer 23A induces photoelectric conversion in the photoelectric conversion layer 23A. Holes generated by the photoelectric conversion are fed via the wiring V OU from the second electrode 22 to the drive circuit. On the other hand, since the first electrode 21 has a higher potential than the second electrode 22, in other words, for example, a positive potential is applied to the first electrode 21, whereas a negative potential is applied to the second electrode 22, it is assumed that V 31 > V 51 (for example V 31 > V 11 > V 51 or V 11 > V 31 > V 51) is satisfied. Accordingly, electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and deposited in the regions of the oxide semiconductor layer 23C and the like that are opposite to the charge storage electrode 24. In other words, charge is stored in the oxide semiconductor layer 23C and the like. Since V 31 > V 51 is satisfied, electrons generated within the photoelectric conversion layer 23A can be reliably prevented from migrating toward the first electrode 21. As time for photoelectric conversion elapses, the regions of the oxide semiconductor layer 23C and the like opposite to the charge storage electrode 24 have a potential with a more negative value.

[0171] During the later phase of the charge storage period, the reset operation is performed. This resets the potential of the first floating diffusion layer FD1 to make the potential of the first floating diffusion layer FD1 equal to the potential V DD to set up.

[0172] After the reset operation is completed, charge is read out. Specifically, the control circuit sets the potential V during the charge transfer period. 12 to the first electrode 21, applies the potential V 32 to the charge storage electrode 24 and applies the potential V 52 to the transfer control electrode 25. Here it is assumed that the V 32 ≤ V 52 ≤ V 12 (preferably V 32 < V 52 < V 12) is satisfied. Thus, the electrons deposited in the regions of the oxide semiconductor layer 23C and the like facing the charge storage electrode 24 are reliably read out to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, the charge stored in the oxide semiconductor layer 23C and the like is read out to the control section.

[0173] The sequence of operations including charge storage, reset operation and charge transfer is completed as above.

[0174] Operations of the amplifying transistor TR1 amp and the selection transistor TR1 selAfter reading out the electrons to the first floating diffusion layer FD1, the operations are the same as those of known transistors. Furthermore, the sequence of operations of the second image pickup element 11 and the third image pickup element 12, including charge storage, reset, and charge transfer, is similar to the known sequence of operations including charge storage, reset, and charge transfer.

[0175] As in Fig. 23, which is a schematic layout diagram of a first electrode and a charge storage electrode included in a modified example of the image pickup element of Embodiment 5, and transistors included in a control section, the other source / drain region 51B of the reset transistor TR1 rst , instead of the power supply V DD to be connected, to be grounded.

[0176] Accordingly, a plurality of transfer control electrodes may be provided and arranged from a position closest to the first electrode 21 toward the charge storage electrode 24. Embodiment 6

[0177] Embodiment 6 is a modification of Embodiments 1 to 5 and relates to the image pickup element and the like including the charge emission electrode according to the present disclosure. Fig. 24 is a schematic partial cross-sectional view of a part of the image pickup element of Embodiment 6, and Fig. 25 illustrates a layout diagram of a first electrode, a charge storage electrode, and a charge emission electrode included in a photoelectric conversion section including the charge storage electrode in the image pickup element of Embodiment 6.

[0178] The image pickup element of Embodiment 6 further includes a charge emission electrode 26 connected to the oxide semiconductor layer 23C via a connection section 69 and spaced apart from the first electrode 21 and the charge storage electrode 24. Here, the charge emission electrode 26 is arranged to surround the first electrode 21 and the charge storage electrode 24 (i.e., like a frame). The charge emission electrode 26 is connected to a pixel drive circuit included in a drive circuit. The oxide semiconductor layer 23C and the oxide film 23B extend through the connection section 69. Specifically, the oxide semiconductor layer 23C and the oxide film 23B extend through a second opening 85 provided in the insulating layer 82 and are connected to the charge emission electrode 26.The charge-emitting electrode 26 is shared by (commonly provided for) a plurality of image pickup elements. An upwardly widening slope may be formed on a side surface of the second opening 85. The charge-emitting electrode 26 may be used, for example, for floating diffusion in the photoelectric conversion section or as an overflow drain of the photoelectric conversion section.

[0179] In embodiment 6, the drive circuit sets the potential V 11 to the first electrode 21, applies the potential V 31 to the charge storage electrode 24 and applies the potential V 61to the charge-emitting electrode 26, and charge is then stored in the oxide semiconductor layer 23C and the like. Light incident on the photoelectric conversion layer 23A induces photoelectric conversion in the photoelectric conversion layer 23A. Holes generated by the photoelectric conversion are fed via the wiring V OU from the second electrode 22 to the drive circuit. On the other hand, since the first electrode 21 has a higher potential than the second electrode 22, in other words, for example, a positive potential is applied to the first electrode 21, whereas a negative potential is applied to the second electrode 22, it is assumed that V 61 > V 11 (for example V 31 > V 61 > V 11) is satisfied. Accordingly, electrons generated by the photoelectric conversion are attracted to the charge storage electrode 24 and deposited in regions of the oxide semiconductor layer 23C and the like that are opposite to the charge storage electrode 24, and the electrons can be reliably prevented from migrating toward the first electrode 21. However, electrons that are not sufficiently attracted to the charge storage electrode 24 or that could not be completely stored in the oxide semiconductor layer 23C and the like (which are referred to as overflow electrons) are transferred to the drive circuit via the charge emission electrode 26.

[0180] During the later phase of the charge storage period, the reset operation is performed. This resets the potential of the first floating diffusion layer FD1 to make the potential of the first floating diffusion layer FD1 equal to the potential V DDto set up.

[0181] After the reset operation is completed, charge is read out. Specifically, the control circuit sets the potential V during the charge transfer period. 12 to the first electrode 21, applies the potential V 32 to the charge storage electrode 24 and applies the potential V 62 to the charge emission electrode 26. Here it is assumed that V 62 < V 12 (preferably V 62 < V 32 < V 12 ) is satisfied. Thus, the electrons deposited in the regions of the oxide semiconductor layer 23C and the like facing the charge storage electrode 24 are reliably read out to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, the charge stored in the oxide semiconductor layer 23C and the like is read out to the control section.

[0182] The sequence of operations including charge storage, reset operation and charge transfer is completed as described above.

[0183] Operations of the amplifying transistor TR1 amp and the selection transistor TR1 sel After reading out the electrons to the first floating diffusion layer FD1, the operations are the same as those of known transistors. Furthermore, the sequence of operations of the second image pickup element and the third image pickup element, including charge storage, reset, and charge transfer, is similar to the known sequence of operations including charge storage, reset, and charge transfer.

[0184] In Embodiment 6, so-called overflow electrons are transferred to the drive circuit via the charge-emitting electrode 26, so that leakage from the neighboring pixels to the charge storage sections can be prevented and possible blooming can also be inhibited. This enables the image pickup performance of the image pickup element to be improved. Embodiment 7

[0185] Embodiment 7 is a modification of Embodiments 1 to 6 and relates to the image pickup element and the like including the charge transfer control electrode of the present disclosure, and specifically to the image pickup element and the like including the lower charge transfer control electrode (bottom-side charge transfer control electrode) of the present disclosure. Fig.26 is a schematic partial cross-sectional view of a part of the image pickup element of Embodiment 7. Fig. 27 illustrates a schematic layout diagram of a first electrode and a charge storage electrode included in the image pickup element of Embodiment 7, and transistors included in a control section. Fig. 28 and Fig. 29 are schematic layout diagrams of a first electrode, a charge storage electrode, and a lower charge transfer control electrode included in a photoelectric conversion section including the charge storage electrode in the image pickup element of Embodiment 7.

[0186] In the image pickup element of Embodiment 7, a lower charge transfer control electrode 27 is formed in a region connected via the insulating layer 82 to a region (region -A of the photoelectric conversion layer) 23 Aof the photoelectric conversion stack 23, which lies between adjacent image pickup elements. In other words, the lower charge transfer control electrode 27 is below a region (region -A of the insulating layer 82) 82 A of the insulating layer 82 in a region (region -a) sandwiched between the charge storage electrode 24 and the charge storage electrode 24 included in the respective adjacent image pickup elements. The lower charge transfer control electrode 27 is spaced apart from the charge storage electrode 24. Alternatively, in other words, the lower charge transfer control electrode 27 surrounds the charge storage electrode 24 at a distance from the charge storage electrode 24 and is arranged to face the region -A (23 A) of the photoelectric conversion layer via the insulating layer 82. The lower charge transfer control electrode 27 is shared by image pickup elements. The lower charge transfer control electrode 27 is also connected to the drive circuit. Specifically, the lower charge transfer control electrode 27 is connected via a connection hole 27A, a pad region 27B, and a wiring V OBprovided in the interlayer insulating film 81 are connected to the vertical drive circuit 112 included in the drive circuit. The lower charge transfer control electrode 27 may be formed in the same plane as that of the first electrode 21 or the charge storage electrode 24, or in a plane different from the plane of the first electrode 21 or the charge storage electrode 24 (concretely, in a plane below the first electrode 21 or the charge storage electrode 24). In the former case, the distance between the charge transfer control electrode 27 and the photoelectric conversion layer 23A can be reduced, which facilitates potential control. On the other hand, the latter case enables a reduction in the distance between the charge transfer control electrode 27 and the charge storage electrode 24 and is thus advantageous for miniaturization.

[0187] In the image pickup element of Embodiment 7, when light is incident on the photoelectric conversion layer 23A to induce photoelectric conversion in the photoelectric conversion layer 23A, since a potential applied to a region of the photoelectric conversion layer 23A opposite the charge storage electrode 24 has a larger absolute value than a potential applied to the -A region of the photoelectric conversion layer 23A, charge generated by the photoelectric conversion is strongly attracted to a region of the oxide semiconductor layer 23C opposite the charge storage electrode 24. This allows suppression of a flow of the charge generated by the photoelectric conversion into the adjacent image pickup elements, preventing the quality of captured videos (images) from deteriorating.Alternatively, the lower charge transfer control electrode 27 is formed in the region opposite to the -A region of the photoelectric conversion layer 23A via the insulating layer, enabling control of an electric field and potential of the -A region of the photoelectric conversion layer 23A located above the lower charge transfer control electrode 27. As a result, the lower charge transfer control electrode 27 enables suppression of the flow of charge generated by photoelectric conversion into the adjacent image pickup elements, preventing the quality of recorded videos (images) from deteriorating.

[0188] In a Fig. 28 and Fig. 29, the lower charge transfer control electrode 27 is below the region 82 Athe insulating layer 82 is formed in the region (region -a) sandwiched between the charge storage electrode 24 and the charge storage electrode 24. On the other hand, in a Fig. 30, Fig. 31A and Fig. 31B, the lower charge transfer control electrode 27 is formed below a portion of the insulating layer 82 in the area surrounded by four charge storage electrodes 24. Note that the Fig. 30, Fig. 31A and Fig. 31B corresponds to the solid-state image pickup devices of the first and second configurations. In four image pickup elements, a first electrode 21 is provided to correspond to four charge storage electrodes 24.

[0189] In a Fig.In the example shown in Fig. 31B, in four image pickup elements, a first electrode 21 is provided so as to correspond to four charge storage electrodes 24. The lower charge transfer control electrode 27 is formed below a portion of the insulating layer 82 in the region surrounded by four charge storage electrodes 24. Further, the charge emission electrode 26 is formed below a portion of the insulating layer 82 in the region surrounded by four charge storage electrodes 24. As described above, the charge emission electrode 26 can be used, for example, for floating diffusion in the photoelectric conversion section or as an overflow drain of the photoelectric conversion section. Embodiment 8

[0190] Embodiment 8 is a modification of Embodiments 1 to 7 and relates to the image pickup element and the like including the upper charge transfer control electrode (top-side charge transfer control electrode) according to the present disclosure. Fig. 32 is a schematic partial cross-sectional view of a part of the image pickup element of Embodiment 8 (two adjacent image pickup elements), and Fig. 34 and Fig. 35 are plan views of a part of the image pickup element of Embodiment 8 (2 × 2 image pickup elements). In the image pickup element of Embodiment 8, instead of the second electrode 22, the upper charge transfer control electrode 28 is provided on the region 23. Aof the photoelectric conversion stack 23, which lies between adjacent image pickup elements. The upper charge transfer control electrode 28 is spaced from the second electrode 22. In other words, the second electrode 22 is provided for each image pickup element, and the upper charge transfer control electrode 28 surrounds at least a part of the second electrode 22 at a distance from the second electrode 22 and is formed on the region -A of the photoelectric conversion stack 23. The upper charge transfer control electrode 28 is formed in the same plane as that of the second electrode 22.

[0191] In addition, as in Fig.33A, which is a schematic partial cross-sectional view of a part of the image pickup element of Embodiment 8 (two adjacent image pickup elements), the second electrode 22 may be divided into a plurality of pieces, and different potentials may be applied to the respective pieces of the second electrode 22. As shown in Fig. 33B, the upper charge transfer control electrode 28 may be provided between the pieces of the second electrode 22 resulting from the division.

[0192] In a Fig. 34, a charge storage electrode 24 is provided in an image pickup element so as to correspond to a first electrode 21. On the other hand, in an example shown in Fig.35, a common first electrode 21 is provided in two image pickup elements so as to correspond to two charge storage electrodes 24. A schematic cross-sectional view of a part of the image pickup element of Embodiment 8 shown in Fig. 32 (two adjacent image recording elements), corresponds Fig. 35.

[0193] In Embodiment 8, each of the second electrodes 22 located on the light incident side is connected to the image pickup elements located in the lateral direction of the sheet of Fig. 34 are arranged, and is used by a pair of image pickup elements arranged in the vertical direction of the sheet of Fig. 34 are shared. In addition, each of the upper charge transfer control electrodes 28 is shared by the image pickup elements arranged in the lateral direction of the sheet of Fig.34 and is shared by a pair of image pickup elements arranged in the vertical direction of the sheet of Fig.34 are arranged. The second electrode 22 and the upper charge transfer control electrode 28 can be obtained by forming material layers included in the second electrode 22 and the upper charge transfer control electrode 28 on the photoelectric conversion stack 23 and then patterning the material layers. The second electrodes 22 and the upper charge transfer control electrodes 28 are individually connected to respective conductive lines (not shown) connected to the drive circuit. Each of the conductive lines connected to the second electrodes 22 is shared by a plurality of image pickup elements. Each of the conductive lines connected to the upper charge transfer control electrodes 28 is also shared by a plurality of image pickup elements.

[0194] The drive circuit sets the potential V in the image pickup element of Embodiment 8 during the charge storage period. 21 to the second electrode 22, applies the potential V 41 to the upper charge transfer control electrode 28 and stores charge in the photoelectric conversion stack 23. The drive circuit applies the potential V 22 to the second electrode 22, applies the potential V 42 to the upper charge transfer control electrode 28 and reads the charge stored in the photoelectric conversion stack 23 to the control section via the first electrode 21. Since the first electrode 21 has a higher potential than the second electrode 22, V21≥V41 and V22≥V42 fulfilled.

[0195] In the image pickup element of Embodiment 8, instead of the second electrode, the charge transfer control electrode is formed on the photoelectric conversion layer region located between adjacent image pickup elements as described above. Consequently, the charge transfer control electrode can suppress the flow of charge generated by photoelectric conversion into adjacent image pickup elements, preventing the quality of captured videos (images) from degrading.

[0196] Fig. 36A is a schematic partial cross-sectional view of a part of a modified example of the image pickup element of Embodiment 8 (two adjacent image pickup elements), and Fig. 37A and Fig.37B illustrate schematic plan views of a portion of the image pickup element. In this modified example, the second electrode 22 is provided for each image pickup element, the upper charge transfer control electrode 28 surrounds at least a portion of the second electrode 22 and is spaced apart from the second electrode 22, and a portion of the charge storage electrode 24 is provided below the upper charge transfer control electrode 28. The second electrode 22 is provided above the charge storage electrode 24 and is smaller in size than the charge storage electrode 24.

[0197] Fig. 36B is a schematic cross-sectional view of a part of a modified example of the image pickup element of Embodiment 8 (two adjacent image pickup elements), and Fig. 38A and Fig.38B illustrate schematic plan views of a part of the image pickup element. In this modified example, the second electrode 22 is provided for each image pickup element, and the upper charge transfer control electrode 28 surrounds at least a part of the second electrode 22 and is spaced from the second electrode 22. A part of the charge storage electrode 24 is provided below the upper charge transfer control electrode 28, and the lower charge transfer control electrode (lower-side charge transfer control electrode) 27 is further provided below the upper charge transfer control electrode (top-side charge transfer control electrode) 28. The second electrode 22 is smaller in size than the second electrode 22 in the modified example shown in Fig.36A. Specifically, a region of the second electrode 22 opposite to the upper charge transfer control electrode 28 is located closer to the first electrode 21 than the region of the second electrode 22 opposite to the upper charge transfer control electrode 28 in the Fig. 36A. The charge storage electrode 24 is surrounded by the lower charge transfer control electrode 27.

[0198] The present disclosure has been described based on the preferred embodiments, but is not limited to the embodiments. The structures and configurations, manufacturing conditions, manufacturing methods, and materials used for the image pickup element, the stacked image pickup element, and the solid-state image pickup device described in the embodiments are illustrative and may be changed as needed. The image pickup elements of the embodiments may be combined as needed. The configurations and structures of the image pickup element of the present disclosure can be used for light-emitting elements, for example, organic EL elements, and channel formation regions of thin-film transistors.

[0199] The floating diffusion layers FD1, FD2, FD3, 51C, 45C and 46C can be used together if necessary, as described above.

[0200] As in Fig. 39, for example, in a modified example of the image pickup element and the stacked image pickup element described in Embodiment 1, the image pickup element and the stacked image pickup element may be configured such that light is incident from the second electrode 22 side, and a light-shielding layer 15 is formed on the light-incident side and closer to the second electrode 22. Note that the various wiring patterns provided with respect to the photoelectric conversion layer on the light-incident side may function as the light-shielding layer.

[0201] Note that in the Fig.39, the light-shielding layer 15 is formed above the second electrode 22, that is, the light-shielding layer 15 is formed on the light-incident side and closer to the second electrode 22 and above the first electrode 21, but the light-shielding layer 15 may be arranged on the surface of the light-incident side of the second electrode 22, as in Fig. 40. In addition, as shown in Fig. 41, the light-shielding layer 15 may optionally be formed in the second electrode 22.

[0202] Alternatively, the structure may be arranged so that light is incident from the side of the second electrode 22 and so that no light is incident on the first electrode 21. As in Fig.39, the light-shielding layer 15 is formed on the light incident side and closer to the second electrode 22 and above the first electrode 21. Alternatively, as shown in Fig.43, the structure may be arranged such that the on-chip microlens 14 is provided above the charge storage electrode 24 and the second electrode 22, and such that light incident on the on-chip microlens 14 is focused on the charge storage electrode 24 and does not reach the first electrode 21. Note that the configuration may be arranged such that, in a case where the transfer control electrode 25 is provided, no light is incident on the first electrode 21 and the transfer control electrode 25, as described in the embodiment, and specifically, the structure may be arranged such that the light-shielding layer 15 is formed above the first electrode 21 and the transfer control electrode 25, as shown in Fig.42. Alternatively, the structure may be arranged so that light incident on the on-chip microlens 14 does not reach the first electrode 21 or the first electrode 21 and the transfer control electrode 25.

[0203] When these configurations and structures are adopted, or when the light-shielding layer 15 is provided, or the on-chip microlens 14 is designed so that light is incident only on the region of the photoelectric conversion section located above the charge storage electrode 24, the region of the photoelectric conversion section located above the first electrode 21 (or above the first electrode 21 and the transfer control electrode 25) does not contribute to the photoelectric conversion. This allows all pixels to be reset reliably and simultaneously to more easily achieve the global aperture function. In other words, a method for driving a solid-state image pickup device including a plurality of image pickup elements having these configurations and structures repeats the steps in which in all the image pickup elements, charge in the first electrode 21 is simultaneously emitted to the outside of the system while charge is stored in the oxide semiconductor layer 23C and the like, and then in all the image pickup elements, the charge stored in the oxide semiconductor layer 23C and the like is transferred to the first electrode 21 simultaneously, and after the transfer is completed, the charge transferred to the first electrode 21 in each of the image pickup elements is sequentially read out.

[0204] In such a driving method for solid-state image pickup devices, each of the image pickup elements has a structure in which incident light from the second electrode side does not reach the first electrode, and in all the image pickup elements, the charge in the first electrode is emitted to the outside of the system while storing charge in the oxide semiconductor layer and the like. This allows the first electrode in all the image pickup elements to be reset simultaneously. Subsequently, in all the image pickup elements, the charge stored in the oxide semiconductor layer and the like is transferred to the first electrode, and after the transfer is completed, the charge transferred to the first electrode in each of the image pickup elements is read out. Consequently, what is called the global aperture function can be easily achieved.

[0205] If an oxide semiconductor layer 23C and the oxide film 23B are formed that are shared by a plurality of image pickup elements, in order to protect the ends of the oxide semiconductor layer 23C and the oxide film 23B, the ends of the oxide semiconductor layer 23C and the oxide film 23B are desirably covered with at least the photoelectric conversion layer 23A. It is sufficient that the structure of the image pickup element in this case is as shown at right ends of the oxide semiconductor layer 23C and the oxide film 23B in FIG. 10, which is a schematic cross-sectional view. Fig. 2 is arranged as illustrated.

[0206] In a modified example of the image pickup element of Embodiment 4 in Fig.44, which is a schematic partial cross-sectional view, color filter layers 16B, 16G, and 16R for separating light into blue, green, and red are arranged on the light incident side of each of the image pickup elements (blue light image pickup element 10B, green light image pickup element 10G, and red light image pickup element 10R). In this case, it is sufficient for the image pickup elements 10R, 10G, and 10B to comprise back-illumination type or front-illumination type image pickup elements provided with the white light-absorbing photoelectric conversion layer 23A. The image pickup elements 10B, 10G, and 10R have the same configuration and structure except that the color filter layers 16B, 16G, and 16R are different from each other. In addition, the photoelectric conversion layer 23A can be shared by the image pickup elements 10B, 10G and 10R.

[0207] In the embodiments, it is assumed that the signal charge includes electrons, and it is assumed that the photoelectric conversion layer formed in the semiconductor substrate has n-type conductivity. However, the embodiments can be applied to solid-state imaging devices in which the signal charge includes holes. In this case, it is sufficient for each semiconductor region to include a semiconductor region with an opposite conductivity type, and for the photoelectric conversion layer formed in the semiconductor substrate to have p-type conductivity.

[0208] Furthermore, the embodiments were described taking as an example the case of application to CMOS solid-state image pickup devices that include unit pixels arranged in a matrix and detect a signal charge corresponding to the amount of incident light as a physical quantity. However, the embodiments are not limited to application to CMOS solid-state image pickup devices, but can be applied to CCD solid-state image pickup devices. In the latter case, the signal charge is transferred in the vertical direction by means of a vertical transfer register having a CCD structure and transferred in the horizontal direction by means of a horizontal transfer register to be amplified, resulting in the output of pixel signals (image signals).Furthermore, the embodiments are not generally limited to column-type solid-state image pickup devices including pixels arranged in a two-dimensional matrix and column signal processing circuits each arranged for a corresponding pixel row. Furthermore, the selection transistors may be omitted under certain circumstances.

[0209] Furthermore, the image pickup element and the stacked image pickup element of the present disclosure can be used not only for solid-state image pickup devices that detect the distribution of the amount of incident visible light to capture the light as an image, but also for solid-state image pickup devices that capture the distribution of the amount of incident infrared rays, X-rays, particles, or the like as an image. Furthermore, in a broad sense, the embodiments can be generally used for solid-state image pickup devices, such as a fingerprint detection sensor, that detect the distribution of other physical quantities such as pressure and capacitance to capture the distribution as an image (a physical quantity distribution detecting device).

[0210] Furthermore, the embodiments are not limited to solid-state imaging devices that scan unit pixels in an imaging region in units of rows to read out a pixel signal from each of the unit pixels. The embodiments can be applied to an XY address type solid-state imaging device that selects arbitrary pixels in units of pixels and reads out pixel signals from the selected pixels in units of pixels. The solid-state imaging device may be formed as a single chip or may be modularly configured and have an imaging function including an imaging region and a driving circuit or an optical system packaged together.

[0211] Furthermore, the embodiments are not limited to application to solid-state image pickup devices, but can also be used for image pickup devices. The image pickup device here refers to an electronic device with an image pickup function, for example, a camera system such as a digital camera or a video camera or a mobile phone. The image pickup device can be a modular configuration mounted in an electronic device, i.e., a camera module.

[0212] Fig.50 illustrates a conceptual diagram of an example in which a solid-state imaging device 201 including the imaging element and the stacked imaging element of the present disclosure is used for an electronic device (camera) 200. The electronic device 200 includes the solid-state imaging device 201, an optical lens 210, a shutter device 211, a driving circuit 212, and a signal processing circuit 213. The optical lens 210 images imaging light (incident light) from an object into an image on an image pickup surface of the solid-state imaging device 201. This causes a signal charge to be stored in the solid-state imaging device 201 for a certain period of time. The shutter device 211 controls a light irradiation period and a light shielding period for the solid-state imaging device 201.The drive circuit 212 inputs drive signals that control a transfer operation and the like of the solid-state image pickup device 201 and a shutter operation of the shutter device 211. Drive signals (timing signals) input from the drive circuit 212 cause the solid-state image pickup device 201 to perform signal transmission. The signal processing circuit 213 performs various types of signal processing. Video signals that have undergone signal processing are stored in a storage medium such as a memory or output to a monitor. Such an electronic device 200 allows miniaturization of the pixel size in the solid-state image pickup device 201 and improvement of the transmission efficiency. Thus, the electronic device 200 with improved pixel characteristics can be obtained.The electronic device 200 for which the solid-state image pickup device 201 can be used is not limited to cameras, but can be used for image pickup devices such as camera modules for a mobile device such as a digital image camera or a mobile phone.

[0213] The technology according to the present disclosure (present technology) can be applied to various products. For example, the technology according to the present disclosure can be implemented as a device mounted in any type of moving body, such as an automobile, an electric car, a hybrid electric car, a motorcycle, a bicycle, a personal mobility vehicle, an aircraft, a drone, a ship, or a robot.

[0214] Fig.52 is a block diagram illustrating an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to an embodiment of the present disclosure can be applied.

[0215] The vehicle control system 12000 comprises a plurality of electronic control units that are interconnected via a communication network 12001. In the Fig.52, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output section 12052, and an interface (I / F) 12053 of the vehicle-mounted network are illustrated.

[0216] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for a driving force generating device for generating a driving force of the vehicle, such as an internal combustion engine, a drive motor, or the like, a driving force transmitting mechanism for transmitting the driving force to wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, and the like.

[0217] The body system control unit 12020 controls the operation of various types of devices provided on a vehicle body according to various types of programs. For example, the body system control unit 12020 serves as a control device for a keyless entry system, a smart key system, an automatic window device, or various types of lights such as a headlight, a taillight, a brake light, a turn signal, a fog light, or the like. In this case, radio waves transmitted from a mobile device as an alternative to a key or signals from various types of switches can be input to the body system control unit 12020.The body system control unit 12020 receives these input radio waves or signals and controls a door locking device, the automatic window device, the lights or the like of the vehicle.

[0218] The vehicle-external information detection unit 12030 detects information about the external environment of the vehicle including the vehicle control system 12000. For example, the vehicle-external information detection unit 12030 is connected to an imaging section 12031. The vehicle-external information detection unit 12030 causes the imaging section 12031 to capture an image of the vehicle's external environment and receives the captured image. The vehicle-external information detection unit 12030 can perform processing for detecting an object such as a person, a car, an obstacle, a traffic sign, a sign on a road surface, or the like, or processing for detecting a distance thereto based on the received image.

[0219] The imaging section 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging section 12031 can also output the electrical signal as an image or can output the electrical signal as information about a measured distance. Furthermore, the light received by the imaging section 12031 can be visible light or can be invisible light such as infrared rays or the like.

[0220] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected, for example, to a driver condition detection section 12041 that detects the condition of a driver. The driver condition detection section 12041 includes, for example, a camera that records the driver. The in-vehicle information detection unit 12040 can calculate a driver's fatigue level or a driver's concentration level, or can determine whether the driver is dozing based on detection information input from the driver condition detection section 12041.

[0221] The microcomputer 12051 may calculate a control target value for the driving force generating device, the steering mechanism, or the braking device based on the information about the interior or exterior of the vehicle obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040, and may output a control command to the drive system control unit 12010.For example, the microcomputer 12051 may perform cooperative control intended to realize functions of an advanced driver assistance system (ADAS), the functions of which include collision avoidance or impact mitigation for the vehicle, following travel based on a following distance, constant speed travel, vehicle collision warning, vehicle lane departure warning, or the like.

[0222] In addition, the microcomputer 12051 can perform cooperative control intended for automatic driving, which makes the vehicle drive autonomously without depending on driver intervention or the like, by controlling the driving force generating device, the steering mechanism, the braking device, or the like based on the information about the external environment or the interior of the vehicle, which information is obtained by the outside-vehicle information detecting unit 12030 or the inside-vehicle information detecting unit 12040.

[0223] The microcomputer 12051 can also output a control command to the body system control unit 12020 based on the information about the external environment of the vehicle obtained by the external vehicle information detection unit 12030. For example, the microcomputer 12051 can perform cooperative control intended to prevent glare by controlling the headlight to switch from high beam to low beam according to the position of a preceding vehicle or an oncoming vehicle detected by the external vehicle information detection unit 12030.

[0224] The sound / image output section 12052 transmits an output signal of a sound and / or an image to an output device that can visually or acoustically convey information to an occupant of the vehicle or the external environment of the vehicle. In the example of Fig. 52, a speaker 12061, a display section 12062, and an instrument panel 12063 are indicated as the output device. The display section 12062 may include, for example, an in-vehicle display and / or a head-up display.

[0225] Fig. 53 is a diagram illustrating an example of an installation position of the imaging section 12031.

[0226] In Fig. 53, the vehicle 12100 includes imaging sections 12101, 12102, 12103, 12104, and 12105 as the imaging section 12031.

[0227] The imaging sections 12101, 12102, 12103, 12104, and 12105 are arranged at positions on, for example, a front end, side mirrors, a rear bumper, and a tailgate of the vehicle 12100, as well as a position on an upper part of a windshield inside the vehicle. The imaging section 12101 provided at the front end and the imaging section 12105 provided at the upper part of the windshield inside the vehicle primarily obtain an image from the front of the vehicle 12100. The imaging sections 12102 and 12103 provided at the side mirrors primarily obtain an image from the sides of the vehicle 12100. The imaging section 12104 provided at the rear bumper or the tailgate primarily obtains an image from the rear of the vehicle 12100.The front side image obtained by the imaging sections 12102 and 12105 is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0228] Furthermore, Fig.53 shows an example of photographing areas of the imaging sections 12101 to 12104. An imaging area 12111 represents the imaging area of the imaging section 12101 provided at the front end. Imaging areas 12112 and 12113 represent the imaging areas of the imaging sections 12102 and 12103 provided at the side mirrors, respectively. An imaging area 12114 represents the imaging area of the imaging section 12104 provided at the rear bumper or the rear door. For example, a bird's-eye view image of the vehicle 12100 as seen from above is obtained by superimposing image data imaged by the imaging sections 12101 to 12104, for example.

[0229] At least one of the imaging sections 12101 to 12104 may have a function for obtaining distance information. For example, at least one of the imaging sections 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element including pixels for detecting phase differences.

[0230] For example, the microcomputer 12051 can determine a distance to each three-dimensional object within the imaging areas 12111 to 12114 and a time change of the distance (relative speed with respect to the vehicle 12100) on the basis of the distance information obtained from the imaging sections 12101 to 12104, and thereby extract, in particular, as a preceding vehicle, a nearest three-dimensional object that is located on a travel path of the vehicle 12100 and that travels at a predetermined speed (for example, equal to 0 km / h or higher) in substantially the same direction as the vehicle 12100.Furthermore, the microcomputer 12051 can predetermine a following distance to be maintained from a preceding vehicle and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), or the like. Therefore, it is possible to perform cooperative control for automatic driving, which allows the vehicle to drive autonomously without depending on the driver's intervention or the like.

[0231] For example, the microcomputer 12051 can classify three-dimensional object data about three-dimensional objects into three-dimensional object data of a two-wheeled vehicle, a standard-sized vehicle, a large vehicle, a pedestrian, a telephone pole, and other three-dimensional objects based on the distance information obtained from the imaging sections 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional objects to automatically avoid an obstacle. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually recognize and obstacles that are difficult for the driver of the vehicle 12100 to visually recognize. The microcomputer 12051 then determines a collision risk that indicates a risk of collision with each obstacle.In a situation where the collision risk is equal to or higher than a set value and thus a possibility of a collision exists, the microcomputer 12051 issues a warning to the driver via the speaker 12061 or the display section 12062 and performs forced deceleration or evasive steering via the drive system control unit 12010. The microcomputer 12051 can thus assist driving to avoid a collision.

[0232] At least one of the imaging sections 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 may detect a pedestrian by determining whether or not there is a pedestrian in captured images of the imaging sections 12101 to 12104. Such detection of a pedestrian is performed, for example, by a procedure for extracting characteristic points in the captured images of the imaging sections 12101 to 12104 as infrared cameras and a procedure for determining whether or not it is the pedestrian by performing pattern matching processing on a series of characteristic points indicating the contour of the object.When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging sections 12101 to 12104 and thus detects the pedestrian, the audio / video output section 12052 controls the display section 12062 to display a quadrangular contour line for highlighting, superimposed on the detected pedestrian. The audio / video output section 12052 can also control the display section 12062 to display an icon or the like representing the pedestrian at a desired position.

[0233] In addition, the technique according to the present disclosure may further be used for a system for endoscopic surgery.

[0234] Fig.54 is a view illustrating an example of a schematic configuration of an endoscopic surgery system to which the technology according to an embodiment of the present disclosure (present technology) can be applied.

[0235] In Fig. 54 illustrates a state in which a surgeon (doctor) 11131 is using an endoscopic surgery system 11000 to perform a surgical operation on a patient 11132 on a patient bed 11133. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy treatment device 11112, a support arm device 11120 supporting the endoscope 11100 thereon, and a trolley 11200 on which various endoscopic surgery devices are mounted.

[0236] The endoscope 11100 includes a lens tube 11101 having a predetermined length portion from its distal end to be inserted into a body cavity of the patient 11132, and a camera head 11102 connected to a proximal end of the lens tube 11101. In the illustrated example, the endoscope 11100 is shown as including a rigid endoscope with the hard-type lens tube 11101. However, the endoscope 11100 may otherwise be incorporated as a flexible endoscope with the flexible-type lens tube 11101.

[0237] At its distal end, the lens tube 11101 has an opening into which an object lens is fitted. A light source device 11203 is connected to the endoscope 11100 such that light generated by the light source device 11203 is introduced into a distal end of the lens tube 11101 through a light guide extending within the lens tube 11101 and irradiated toward an observation target in a body cavity of the patient 11132 through the object lens. It is noted that the endoscope 11100 may be a straight-view endoscope, an oblique-view endoscope, or a side-view endoscope.

[0238] An optical system and an image pickup element are provided within the camera head 11102 such that reflected light (observation light) from the observation target is converged or collected by the optical system onto the image pickup element. The observation light is photoelectrically converted by the image pickup element to generate an electrical signal corresponding to the observation light, namely, an image signal corresponding to an observation image. The image signal is transmitted as raw data to a CCU 11201.

[0239] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), or the like, and integrally controls an operation of the endoscope 11100 and a display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processes for displaying an image based on the image signal, such as, for example, a development process (demosaicing process).

[0240] The display device 11202 displays thereon an image based on an image signal for which the image processes have been performed by the CCU 11201, under a control of the CCU 11201.

[0241] The light source device 11203 includes a light source, such as a light-emitting diode (LED), and supplies irradiation light to the endoscope 11100 when imaging a surgical area.

[0242] An input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various types of information or instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction or the like to change an image acquisition condition (a type of irradiation light, a magnification, a focal length, or the like) by the endoscope 11100.

[0243] A treatment instrument control device 11205 controls the operation of the energy treatment device 11112 for cauterizing or cutting a tissue, occluding a blood vessel, or the like. To ensure the field of view of the endoscope 11100 and to ensure the working space for the surgeon, a pneumoperitoneum device 11206 introduces gas into a body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to expand the body cavity. A recording device 11207 is a device that can record various types of information related to a surgical procedure. A printer 11208 is a device that can print various types of information related to a surgical procedure in various forms such as text, images, or graphics.

[0244] It is particularly noteworthy that the light source device 11203, which supplies irradiation light to the endoscope 11100 when imaging a surgical area, may include a white light source, for example, an LED, a laser light source, or a combination thereof. When a white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing for each color (each wavelength) can be controlled with a high degree of accuracy, adjustment of the white balance of an acquired image from the light source device 11203 can be performed. Furthermore, in this case, if laser beams from the respective RGB laser light sources are irradiated onto an observation target in a time-division manner, control of the image pickup elements of the camera head 11102 is controlled in synchronization with the irradiation timing.Then, images corresponding individually to the R, G, and B colors can also be recorded in a time-division multiplex manner. According to this method, it is possible to obtain a color image even if no color filters are provided for the image pickup element.

[0245] Furthermore, the light source device 11203 can be controlled to change the intensity of emitted light every predetermined time. By controlling the drive of the image pickup element of the camera head 11102 in synchronization with the timing of the change in light intensity to capture images in a time-division multiplexed manner, and combining or synthesizing the images, a high-dynamic-range image can be generated without underdeveloped, blocked shadows and overexposed highlights.

[0246] Furthermore, the light source device 11203 may be configured to provide light of a predetermined wavelength band suitable for special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue to irradiate light of a narrow band compared with irradiation light in ordinary observation (namely, white light), narrow-band observation (narrow-band imaging) is performed to image a predetermined tissue such as a blood vessel or a surface portion of the mucosal membrane with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescent light formed by irradiation with excitation light.In fluorescence observation, it is possible to perform observation of fluorescent light from a body tissue by irradiating excitation light onto the body tissue (autofluorescence observation), or to obtain a fluorescent light image by locally injecting a reagent such as indocyanine green (ICG) into a body tissue and irradiating excitation light corresponding to a fluorescence wavelength of the reagent onto the body tissue. The light source device 11203 may be configured to provide such narrow-band light and / or excitation light suitable for special light observation as described above.

[0247] Fig. 61 is a block diagram showing an example of a functional configuration of the camera head 11102 and the CCU 11201 used in Fig. 54 are shown.

[0248] The camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other for communication by a transmission cable 11400.

[0249] The lens unit 11401 is an optical system provided at a junction with the lens barrel 11101. Observation light received from a distal end of the lens barrel 11101 is guided to the camera head 11102 and inserted into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses, including a zoom lens and a focus lens.

[0250] The image pickup unit 11402 includes image pickup elements. The number of image pickup units included in the image pickup unit 11402 may be one (single-panel type) or a plurality (multi-panel type). For example, when the image pickup unit 11402 is configured as a multi-panel type, image signals corresponding to respective R, G, and B are generated by the image pickup elements, and the image signals can be synthesized to obtain a color image. The image pickup unit 11402 may also be configured to include a pair of image pickup elements to acquire respective right-eye and left-eye image signals suitable for three-dimensional (3D) display. If 3D display is performed, then the depth of a living body tissue in a surgical area can be more accurately recognized by the surgeon 11131.It is particularly noted that when the image pickup unit 11402 is configured such as that of a stereoscopic type, a plurality of systems of lens units 11401 are provided corresponding to the individual image pickup elements.

[0251] Furthermore, the image pickup unit 11402 does not necessarily have to be provided on the camera head 11102. For example, the image pickup unit 11402 may be provided immediately behind the objective lens within the lens barrel 11101.

[0252] The control unit 11403 includes an actuator and, under the control of the camera head control unit 11405, moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along an optical axis. Consequently, the magnification and focus of a captured image can be appropriately adjusted by the image pickup unit 11402.

[0253] The communication unit 11404 includes a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits an image signal acquired from the image acquisition unit 11402 to the CCU 11201 as raw data via the transmission cable 11400.

[0254] In addition, the communication unit 11404 receives a control signal for controlling a drive of the camera head 11102 from the CCU 11201 and provides the control signal to the camera head control unit 11405. The control signal contains information related to image capturing conditions, such as, for example, information that a frame rate of a captured image is determined, information that an exposure value is determined during image capturing, and / or information that a magnification and focus of a captured image are determined.

[0255] It is particularly noteworthy that the image acquisition conditions such as the frame rate, exposure value, magnification, or focus can be specified by the user or automatically adjusted by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 integrates an automatic exposure (AE) function, an autofocus (AF) function, and an automatic white balance (AWB) function.

[0256] The camera head control unit 11405 controls a control of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0257] The communication unit 11411 includes a communication device for transmitting and receiving various types of information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 to the camera head 11102 via the transmission cable 11400.

[0258] In addition, the communication unit 11411 transmits a control signal for controlling a drive of the camera head 11102 to the camera head 11102. The image signal and the control signal may be transmitted by means of electrical communication, optical communication, or the like.

[0259] The image processing unit 11412 performs various image processes for an image signal in the form of raw data transmitted thereto from the camera head 11102.

[0260] The control unit 11413 performs various types of control regarding image capturing of a surgical area or the like by the endoscope 11100 and displaying a captured image obtained by capturing the surgical area or the like. For example, the control unit 11413 generates a control signal to control the driving of the camera head 11102.

[0261] Furthermore, based on an image signal for which image processing has been performed by the image processing unit 11412, the control unit 11413 controls the display device 11202 to display a captured image in which the area of a surgical operation or the like is depicted. Then, the control unit 11413 can recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize a surgical instrument such as forceps, a specific area of a living body, bleeding, haze when the energy treatment device 11112 is used, and so on by detecting the shape, color, and so on of edges of objects included in a captured image.The control unit 11413, when controlling the display device 11202 to display a captured image, can cause various types of surgical support information to be displayed in an overlapping manner with an image of the surgical area using a recognition result. When the surgical support information is displayed in an overlapping manner and presented to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can continue the surgical operation safely.

[0262] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable suitable for communication of electrical signals, an optical fiber suitable for optical communication, or a composite cable suitable for both electrical and optical communication.

[0263] While in the illustrated example communication is carried out by means of wired communication using the transmission cable 11400, here the communication between the camera head 11102 and the CCU 11201 can be carried out by means of wireless communication.

[0264] Note that the system for endoscopic surgery has been described as an example, but the technique according to the present disclosure can be used for another surgical system, for example, a system for microscopic surgery.

[0265] Note that the present disclosure may also assume configurations described below. [A01] < <bildaufnahmeelement>> An image pickup element comprising: a photoelectric conversion section including a first electrode, a photoelectric conversion layer and a second electrode stacked on each other, wherein immediately below the photoelectric conversion layer, an oxide film and an oxide semiconductor layer are formed from one side of the photoelectric conversion layer. [A02] The image pickup element according to [A01], wherein at least some of the elements contained in the oxide film are different from elements contained in the oxide semiconductor layer. [A03] The image pickup element according to [A01] or [A02], wherein assuming that E2 denotes an energy average value at a maximum energy value of a conduction band of the oxide semiconductor layer and that E1 denotes an energy average value at a maximum energy value of a conduction band of the oxide film E1−E2≥−0.4(eV) is fulfilled. [A04] The image pickup element according to [A03], wherein assuming that E0 denotes an energy average value at a LUMO value for the photoelectric conversion layer, E0−E1≥−0.4(eV) is fulfilled. [A05] The image pickup element according to [A04], wherein E0≥E1≥E2 is met. [A06] The image pickup element according to any one of [A01] to [A05], wherein assuming that E4 denotes an energy average value at a minimum energy value for a valence band of the oxide film and that E3 denotes an energy average value at a HOMO value for the photoelectric conversion layer, E3−E4≥−0.4(eV) is fulfilled. [A07] The image pickup element according to [A06], wherein assuming that E5 denotes an energy average value at a minimum energy value for a valence band of the oxide semiconductor layer, E4−E5≥−0.4(eV) is fulfilled. [A08] The image pickup element according to [A07], wherein E3 ≥ E4 ≥ E5 is met. [A09] The image pickup element according to any one of [A01] to [A08], wherein a material contained in the oxide film (constituent material of the oxide film) contains a metal oxide. [A10] The image pickup element according to [A09], wherein the metal oxide contains at least one type of element selected from the group consisting of tantalum, titanium, vanadium, niobium, tungsten, zirconium, hafnium, scandium, yttrium, lanthanum, gallium and magnesium. [A11] The image pickup element according to [A10], wherein the oxide film contains an addition of at least one type of element selected from the group consisting of silicon (Si), tantalum (Ta), vanadium (V), niobium (Nb), tungsten (W), zirconium (Zr), hafnium (Hf), scandium (Sc), yttrium (Y), lanthanum (La), gallium (Ga), magnesium (Mg), aluminum (Al), strontium (Sr), germanium (Ge), hydrogen (H), carbon (C), and nitrogen (N) (but the element is different from the element contained in the metal oxide). [A12] The image pickup element according to [A11], wherein the oxide film contains an addition of at least one kind of element selected from the group consisting of silicon (Si), niobium (Nb), tungsten (W), zirconium (Zr), aluminum (Al), carbon (C) and nitrogen (N) (but the element is different from the element contained in the metal oxide). [A13] The image pickup element according to any one of [A09] to [A12], wherein the oxide film has a thickness equal to or greater than one atomic layer and equal to 1 × 10 -7 m or smaller. [A14] The image pickup element according to any one of [A01] to [A08], wherein the oxide film contains a tunnel oxide film. [A15] The image pickup element according to [A14], wherein the tunnel oxide film contains at least one type of material selected from the group consisting of SiO x , SiON, SiOC and AlO y contains. [A16] The image pickup element according to any one of [A14] or [A15], wherein the tunnel oxide film has a thickness equal to or greater than one atomic layer and equal to 5 × 10 -9 m or smaller. [A17] The image pickup element according to any one of [A01] to [A08], wherein the oxide film contains a stacked structure of a metal oxide-containing film and a tunnel oxide film. [A18] The image pickup element according to [A17], wherein the metal oxide contains at least one type of element selected from the group consisting of tantalum, titanium, vanadium, niobium, tungsten, zirconium, hafnium, scandium, yttrium, lanthanum, gallium and magnesium. [A19] The image pickup element according to [A18], wherein the oxide film contains an addition of at least one type of element selected from the group consisting of silicon (Si), tantalum (Ta), vanadium (V), niobium (Nb), tungsten (W), zirconium (Zr), hafnium (Hf), scandium (Sc), yttrium (Y), lanthanum (La), gallium (Ga), magnesium (Mg), aluminum (Al), strontium (Sr), germanium (Ge), hydrogen (H), carbon (C), and nitrogen (N) (but the element is different from the element contained in the metal oxide). [A20] The image pickup element according to [A19], wherein the oxide film contains an addition of at least one kind of element selected from the group consisting of silicon (Si), niobium (Nb), tungsten (W), zirconium (Zr), aluminum (Al), carbon (C) and nitrogen (N) (but the element is different from the element contained in the metal oxide). [A21] The image pickup element according to any one of [A17] to [A20], wherein the film containing the metal oxide has a thickness equal to or greater than one atomic layer and equal to 1 × 10 -7 m or smaller. [A22] The image pickup element according to any one of [A17] to [A21], wherein the tunnel oxide film contains at least one type of material selected from the group consisting of SiO x , SiON, SiOC and AlO y contains. [A23] The image pickup element according to any one of [A17] to [A22], wherein the tunnel oxide film has a thickness equal to or greater than one atomic layer and equal to 5 × 10 -9 m or smaller. [A24] The image pickup element according to any one of [A01] to [A23], wherein an average value Conc H-1 a concentration of hydrogen atoms in a region of the oxide semiconductor layer near an interface between the oxide film and the oxide semiconductor layer is higher than an average value Conc H-2 a concentration of hydrogen atoms in a central region of the oxide semiconductor layer along a thickness direction. [A25] The image pickup element according to [A24], wherein Conc H-1 / Conc H-2 ≥ 1.1 is met. [A26] The image pickup element according to any one of [A01] to [A25], wherein assuming that Conc H-1 denotes a value of the concentration of hydrogen atoms in the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer and that Conc H-1 a value of the concentration of atoms contained in the oxide film in the region of the oxide semiconductor layer near the interface between the oxide film and the oxide semiconductor layer, an average rate of change ΔConc H-1 by Conc H-1 towards the central region along the thickness direction of the oxide semiconductor layer is greater than an average change rate ΔConc H-1 by Conc H-1 towards the central region along the thickness direction of the oxide semiconductor layer. [A27] The image pickup element according to any one of [A01] to [A26], wherein a color filter layer is provided above the second electrode and the photoelectric conversion layer absorbs white light. [A28] The image pickup element according to any one of [A01] to [A27], wherein a charge generated in the photoelectric conversion layer migrates via the oxide film and the oxide semiconductor layer to the first electrode. [A29] The image pickup element according to [A28], wherein the charge includes electrons. [B01] The image pickup element according to any one of [A01] to [A29], wherein the photoelectric conversion section further includes an insulating layer and a charge storage electrode spaced from the first electrode and arranged to oppose the oxide semiconductor layer via the insulating layer. [B02] The image pickup element according to any one of [A01] to [B01], wherein a charge generated in the photoelectric conversion layer migrates via the oxide film and the oxide semiconductor layer to the first electrode. [B03] The image pickup element according to [B02], wherein the charge includes electrons. [B04] The image pickup element according to any one of [A01] to [B03], wherein the oxide semiconductor layer has a carrier mobility of 10 cm 2 / V·s. [B05] The image pickup element according to any one of [A01] to [B04], wherein the oxide semiconductor layer has a carrier concentration (carrier density) of less than 1 × 10 16 / cm 3 has. [B06] The image pickup element according to any one of [A01] to [B05], wherein the oxide semiconductor layer is amorphous. [B07] The image pickup element according to any one of [A01] to [B06], wherein the oxide semiconductor layer has a thickness of 1 × 10 -8 m to 1.5 × 10 -7 m. [C01] The image pickup element according to any one of [A01] to [B07], further comprising: a semiconductor substrate, wherein the photoelectric conversion section is arranged above the semiconductor substrate. [C02] The image pickup element according to any one of [A01] to [C01], wherein the first electrode extends through an opening provided in the insulating layer and is connected to the oxide semiconductor layer. [C03] The image pickup element according to any one of [A01] to [C01], wherein the oxide semiconductor layer and a protective layer extend through an opening provided in the insulating layer and are connected to the first electrode. [C04] The image pickup element according to [C03], wherein edges of an upper surface of the first electrode are covered with the insulating layer, the first electrode is exposed on a bottom surface of the opening and assuming that a surface of the insulating layer in contact with the upper surface of the first electrode is a first surface and that a surface of the insulating layer in contact with a region of the oxide semiconductor layer opposite to the charge storage electrode is a second surface, a side surface of the opening includes a slope widening from the first surface to the second surface. [C05] The image pickup element according to [C04], wherein the side surface of the opening containing the slope widening from the first surface to the second surface is on the side of the charge storage electrode. [C06] <<Steuerung von Potentialen einer ersten Elektrode und einer Ladungsspeicherelektrode> > The image pickup element according to any one of [A01] to [C05], further comprising: a control section provided in the semiconductor substrate and containing a drive circuit, wherein the first electrode and the charge storage electrode are connected to the drive circuit, During a charge storage period, the control circuit has a potential V 11 to the first electrode, a potential V 31 to the charge storage electrode and stores charge in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) and During a charge transfer period, the control circuit has a potential V 12 to the first electrode, a potential V 32 to the charge storage electrode and reads out the charge stored in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) to the control section via the first electrode, but the first electrode has a higher potential than the second electrode and V31≥V11 and V32 <V12 are fulfilled. [C07] <<Untere Ladungsübertragungs-Steuerelektrode> > The image pickup element according to any one of [A01] to [C06], wherein a lower charge transfer control electrode is formed in a region opposite to a region of the photoelectric conversion layer via the insulating layer, the region of the photoelectric conversion layer being located between adjacent image pickup elements. [C08] < <Steuerung von Potentialen einer ersten Elektrode, einer Ladungsspeicherelektrode und einer unteren Ladungsübertragungs-Steuerelektrode> > The image pickup element according to [C07], further comprising: the control section provided in the semiconductor substrate and containing the drive circuit, wherein the first electrode, the second electrode, the charge storage electrode and the lower charge transfer control electrode are connected to the drive circuit, During the charge storage period, the control circuit maintains the potential V 11 to the first electrode, the potential V 31 to the charge storage electrode, a potential V 41 to the lower charge transfer control electrode and stores charge in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) and During the charge transfer period, the drive circuit maintains the potential V 12 to the first electrode, the potential V 32 to the charge storage electrode, a potential V 42 to the lower charge transfer control electrode and reads out the charge stored in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) to the control section via the first electrode, but V31≥V11, V31>V41 and V12>V32>V42 are fulfilled. [C09] <<Obere Ladungsübertragungs-Steuerelektrode> > The image pickup element according to any one of [A01] to [C06], wherein instead of the second electrode, an upper charge transfer control electrode is formed on a region of the photoelectric conversion layer located between adjacent image pickup elements. [C10] The image pickup element according to [C09], wherein the second electrode is provided for each image pickup element, and the upper charge transfer control electrode surrounds at least a part of the second electrode at a distance from the second electrode and is provided above a region -A of the photoelectric conversion layer. [C11] The image pickup element according to [C09], wherein the second electrode is provided for each image pickup element, the upper charge transfer control electrode surrounds at least a part of the second electrode at a distance from the second electrode, and a part of the charge storage electrode is provided below the charge transfer control electrode. [C12] The image pickup element according to any one of [C09] to [C11], wherein the second electrode is provided for each image pickup element, the upper charge transfer control electrode surrounds at least a part of the second electrode at a distance from the second electrode, a part of the charge storage electrode is provided below the upper charge transfer control electrode, and the lower charge transfer control electrode is further provided below the upper charge transfer control electrode. [C13] < <Steuerung von Potentialen einer ersten Elektrode, einer Ladungsspeicherelektrode und einer Ladungsübertragungs-Steuerelektrode> > The image pickup element according to any one of [C09] to [C12], further comprising: the control section provided in the semiconductor substrate and containing the drive circuit, wherein the first electrode, the second electrode, the charge storage electrode and the charge transfer control electrode are connected to the drive circuit, During the charge storage period, the control circuit has a potential V 21 to the second electrode, a potential V 41 to the charge transfer control electrode and stores charge in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) and During the charge transfer period, the control circuit has a potential V 22 to the second electrode, a potential V 42 to the charge transfer control electrode and reads out the charge stored in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) to the control section via the first electrode, but V21≥V41 and V22≥V42 are fulfilled. [C14] <<Transmission control electrode>> The image pickup element according to any one of [A01] to [C13], further comprising: a transfer control electrode disposed between the first electrode and the charge storage electrode at a distance from the first electrode and the charge storage electrode and disposed to oppose the oxide semiconductor layer via the insulating layer. [C15] < <Steuerung von Potentialen einer ersten Elektrode, einer Ladungsspeicherelektrode und einer Übertragungs-Steuerelektrode> > The image pickup element according to [C14], further comprising: the control section provided in the semiconductor substrate and containing the drive circuit, wherein the first electrode, the charge storage electrode and the transfer control electrode are connected to the drive circuit, During the charge storage period, the control circuit maintains the potential V 11 to the first electrode, the potential V 31 to the charge storage electrode, the potential V 51 to the transfer control electrode and stores charge in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) and During the charge transfer period, the drive circuit maintains the potential V 12 to the first electrode, the potential V 32 to the charge storage electrode, the potential V 52 to the transfer control electrode and reads out the charge stored in the oxide semiconductor layer (or oxide semiconductor layer, the protective layer and the photoelectric conversion layer) to the control section via the first electrode, but the first electrode has a higher potential than the second electrode and V31>V51 and V32≤V52≤V12 are fulfilled. [C16] < <ladungsemissionselektrode>> The image pickup element according to any one of [A01] to [C15], further comprising: a charge emission electrode connected to the oxide semiconductor layer and spaced from the first electrode and the charge storage electrode. [C17] The image pickup element according to any one of [C16], wherein the charge emission electrode is arranged to surround the first electrode and the charge storage electrode. [C18] The image pickup element according to [C16] or [C17], wherein the oxide semiconductor layer and the protective layer extend through a second opening provided in the insulating layer and are connected to the charge emission electrode, edges of an upper surface of the charge emission electrode are covered with the insulating layer, the charge emission electrode is exposed on a bottom surface of the second opening and assuming that a surface of the insulating layer in contact with the upper surface of the charge emission electrode is a third surface and that a surface of the insulating layer in contact with a region of the oxide semiconductor layer opposite to the charge storage electrode is a second surface, a side surface of the second opening includes a slope widening from the third surface to the second surface. [C19] < <Steuerung von Potentialen einer ersten Elektrode, einer Ladungsspeicherelektrode und einer Ladungsemissionselektrode> > The image pickup element according to any one of [C16] to [C18], further comprising: the control section, which is provided in the semiconductor substrate and contains the control circuit, the first electrode, the charge storage electrode and the charge emission electrode are connected to the drive circuit, During the charge storage period, the control circuit maintains the potential V 11 to the first electrode, the potential V 31 to the charge storage electrode, a potential V 61 to the charge emission electrode and stores charge in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) and During the charge transfer period, the drive circuit maintains the potential V 12 to the first electrode, the potential V 32 to the charge storage electrode, a potential V 62 to the charge emission electrode and reads out the charge stored in the oxide semiconductor layer (or the oxide semiconductor layer, the protective layer and the photoelectric conversion layer) to the control section via the first electrode, but the first electrode has a higher potential than the second electrode and V61>V11 and V62 <V12 are fulfilled. [C20] <<Segment einer Ladungsspeicherelektrode> > The image pickup element according to any one of [A01] to [C19], wherein the charge storage electrode comprises a plurality of segments of a charge storage electrode. [C21] The image pickup element according to [C20], wherein in a case where the first electrode has a higher potential than the second electrode, the potential applied to the segment of a charge storage electrode closest to the first electrode during the charge transfer period is higher than the potential applied to the segment of a charge storage electrode furthest from the first electrode during the charge transfer period, and in a case where the first electrode has a lower potential than the second electrode, the potential applied to the segment of a charge storage electrode closest to the first electrode during the charge transfer period is lower than the potential applied to the segment of a charge storage electrode farthest from the first electrode during the charge transfer period. [C22] The image pickup element according to any one of [A01] to [C21], wherein the semiconductor substrate is provided with a floating diffusion layer and an amplification transistor included in the control section, and the first electrode is connected to the floating diffusion layer and a gate section of the amplification transistor. [C23] The image pickup element according to [C22], wherein the semiconductor substrate is further provided with a reset transistor and a selection transistor included in the control section, the floating diffusion layer is connected to one of the source / drain regions of the reset transistor and one of source / drain regions of the amplification transistor is connected to one of source / drain regions of the selection transistor and the other source / drain region of the selection transistor is connected to a signal line. [C24] The image pickup element according to any one of [A01] to [C23], wherein the charge storage electrode is larger in size than the first electrode. [C25] The image pickup element according to any one of [A01] to [C24], wherein Light is incident from the side of the second electrode and a light-shielding layer is formed closer to the light incident side than the second electrode. [C26] The image pickup element according to any one of [A01] to [C24], wherein Light enters from the side of the second electrode and does not fall on the first electrode. [C27] The image pickup element according to [C26], wherein a light-shielding layer is formed closer to the light incident side than the second electrode and above the first electrode. [C28] The image pickup element according to [C26], wherein an on-chip microlens is provided above the charge storage electrode and the second electrode and light incident on the on-chip microlens is focused on the charge storage electrode. [C29] <<Bildaufnahmeelement: Erste Konfiguration> > The image pickup element according to any one of [A01] to [C28], wherein the photoelectric conversion section comprises N (where N ≥ 2) segments of a photoelectric conversion section, the oxide semiconductor layer, the protective layer and the photoelectric conversion layer comprise N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge storage electrode comprises N segments of a charge storage electrode, an n-th (where n = 1, 2, 3, ... N) segment of a photoelectric conversion section includes an n-th segment of a charge storage electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion section with a larger value n is located further away from the first electrode and the segments of an insulating layer have a thickness that gradually varies from a first segment of a photoelectric conversion section to an N-th segment of a photoelectric conversion section. [C30] <<Bildaufnahmeelement: Zweite Konfiguration> > The image pickup element according to any one of [A01] to [C28], wherein the photoelectric conversion section comprises N (where N ≥ 2) segments of a photoelectric conversion section, the oxide semiconductor layer, the protective layer and the photoelectric conversion layer comprise N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge storage electrode comprises N segments of a charge storage electrode, an n-th (where n = 1, 2, 3, ... N) segment of a photoelectric conversion section includes an n-th segment of a charge storage electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion section with a larger value n is located further away from the first electrode and the segments of a photoelectric conversion layer have a thickness that gradually varies from a first segment of a photoelectric conversion section to an N-th segment of a photoelectric conversion section. [C31] <<Bildaufnahmeelement: Dritte Konfiguration> > The image pickup element according to any one of [A01] to [C28], wherein the photoelectric conversion section comprises N (where N ≥ 2) segments of a photoelectric conversion section, the oxide semiconductor layer, the protective layer and the photoelectric conversion layer comprise N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge storage electrode comprises N segments of a charge storage electrode, an n-th (where n = 1, 2, 3, ... N) segment of a photoelectric conversion section includes an n-th segment of a charge storage electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion section with a larger value n is located further away from the first electrode and a material contained in the segment of an insulating layer differs between the adjacent segments of a photoelectric conversion section. [C32] <<Bildaufnahmeelement: Vierte Konfiguration> > The image pickup element according to any one of [A01] to [C28], wherein the photoelectric conversion section comprises N (where N ≥ 2) segments of a photoelectric conversion section, the oxide semiconductor layer, the protective layer and the photoelectric conversion layer comprise N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge storage electrode comprises N segments of a charge storage electrode which are spaced apart from one another, an n-th (where n = 1, 2, 3, ... N) segment of a photoelectric conversion section includes an n-th segment of a charge storage electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion section with a larger value n is located further away from the first electrode and a material contained in the segment of a charge storage electrode differs between the adjacent segments of a photoelectric conversion section. [C33] <<Bildaufnahmeelement: Fünfte Konfiguration> > The image pickup element according to any one of [A01] to [C28], wherein the photoelectric conversion section comprises N (where N ≥ 2) segments of a photoelectric conversion section, the oxide semiconductor layer, the protective layer and the photoelectric conversion layer comprise N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge storage electrode comprises N segments of a charge storage electrode which are spaced apart from one another, an n-th (where n = 1, 2, 3, ... N) segment of a photoelectric conversion section includes an n-th segment of a charge storage electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion section with a larger value n is located further away from the first electrode and the segments of a charge storage electrode have an area which gradually decreases from a first segment of a photoelectric conversion section to an N-th segment of a photoelectric conversion section. [C34] <<Bildaufnahmeelement: Sechste Konfiguration> > The image pickup element according to any one of [A01] to [C28], wherein assuming that a stacking direction of the charge storage electrode, the insulating layer, the oxide semiconductor layer, and the photoelectric conversion layer is a Z direction and that a direction away from the first electrode is an X direction, a cross-sectional area of a stacked region taken along a virtual YZ plane varies depending on a distance from the first electrode, the stacked region including the charge storage electrode, the insulating layer, the oxide semiconductor layer, and the photoelectric conversion layer stacked on top of each other. [D01] <<Gestapeltes Bildaufnahmeelement> > A stacked image pickup element comprising: at least one image pickup element according to any one of [A01] to [C34]. [E01] <<Festkörper-Bildaufnahmeeinrichtung: Erster Aspekt> > A solid-state imaging device comprising: a plurality of image pickup elements according to any one of [A01] to [C34]. [E02] <<Festkörper-Bildaufnahmeeinrichtung: Zweiter Aspekt> > A solid-state imaging device comprising: a plurality of stacked image pickup elements according to [D01] . [F01] <<Festkörper-Bildaufnahmeeinrichtung: Erste Konfiguration> > A solid-state imaging device comprising: a photoelectric conversion section including a first electrode, a photoelectric conversion layer and a second electrode stacked on each other, wherein the photoelectric conversion section includes a plurality of the image pickup elements according to any one of [A01] to [C34], the plurality of image pickup elements are contained in an image pickup element block and the first electrode is shared by the plurality of image pickup elements included in the image pickup element block. [F02] <<Festkörper-Bildaufnahmeeinrichtung: Zweite Konfiguration> > A solid-state imaging device comprising: a plurality of stacked image pickup elements according to [C01], wherein the plurality of image pickup elements are contained in an image pickup element block and a first electrode is shared by the plurality of image pickup elements included in the image pickup element block. [F03] The solid-state image pickup device according to [F01] or [F02], wherein an on-chip microlens is arranged above an image pickup element. [F04] The solid-state image pickup device according to [F01] or [F02], wherein two image pickup elements are contained in one image pickup element block and an on-chip microlens is arranged above the image pickup element block. [F05] The solid-state image pickup device according to any one of [F01] to [F04], wherein a floating diffusion layer is provided for the plurality of image pickup elements. [F06] The solid-state image pickup device according to any one of [F01] to [F05], wherein the first electrode is arranged so as to be adjacent to a charge storage electrode of each image pickup element. [F07] The solid-state image pickup device according to any one of [F01] to [F06], wherein the first electrode is arranged to be adjacent to charge storage electrodes of some of the plurality of image pickup elements and is not arranged to be adjacent to charge storage electrodes of the remaining ones of the plurality of image pickup elements. [F08] The solid-state image pickup device according to [F07], wherein a distance between the charge storage electrode contained in the image pickup element and the charge storage electrode contained in the image pickup element is longer than a distance between the first electrode in the image pickup element adjacent to the first electrode and the charge storage electrode. [G01] <<Ansteuerverfahren für eine Festkörper-Bildaufnahmeeinrichtung> > A driving method for a solid-state image pickup device including a plurality of image pickup elements each including a photoelectric conversion section including a first electrode, a photoelectric conversion layer, and a second electrode stacked on top of each other, wherein the photoelectric conversion section includes a charge storage electrode spaced from the first electrode and arranged to oppose the photoelectric conversion layer via an insulating layer, the image pickup element has a structure in which light is incident from the side of the second electrode but no light is incident on the first electrode, wherein the driving method repeats the steps in which: in all the image pickup elements, a charge in the first electrode is emitted to the outside of a system simultaneously, while charge is stored in an oxide semiconductor layer, and then in all the image pickup elements, the charge stored in the oxide semiconductor layer is transferred to the first electrode simultaneously, and after the transfer is completed, the charge transferred to the first electrode in each of the image pickup elements is sequentially read out. [List of reference symbols]

[0266] 10, 10R, 10G, 10B ... image pickup element (stacked image pickup element, first image pickup element), 11 ... second image pickup element, 12 ... third image pickup element, 13 ... various components of image pickup elements located below an interlayer insulating layer, 14 ... on-chip microlens (OCL), 15 ... light-shielding layer, 16R, 16G, 16B ... color filter layer, 21 ... first electrode, 22 ... second electrode, 23 ... photoelectric conversion stack, 23A ... photoelectric conversion layer, 23B ... oxide film, 23C ... oxide semiconductor layer, 24 ... charge storage electrode, 25 ... transfer control electrode (charge transfer electrode), 26 ... charge emission electrode, 27 ... lower charge transfer control electrode (bottom-side charge transfer control electrode), 27A ... connection hole, 27B ... pad area, 28 ... upper charge transfer control electrode (top-side charge transfer control electrode), 41 ...N-type semiconductor region included in a second image pickup element, 43 ... N-type semiconductor region included in a third image pickup element, 42, 44, 73 ... p. + -layer, 45, 46 ... gate section of a transfer transistor, 51 ... gate section of a reset transistor TR1 rst , 51A ... Channel formation region of the reset transistor TR1 rst , 51B, 51C ... Source / drain region of the reset transistor TR1 rst , 52 ... Gate section of an amplifying transistor TR1 amp 52A ... Channel formation region of the selection transistor TR1 amp , 52B, 52C ... Source / drain region of the amplification transistor TR1 amp , 53 ... Gate section of the selection transistor TR1 sel , 53A ... Channel formation region of the selection transistor TR1 sel , 53B, 53C ... Source / drain region of the selection transistor TR1 sel , 61 ... contact hole region, 62 ... wiring layer, 63, 64, 68A ... pad region, 65, 68B ... connection hole, 66, 67, 69 ... connection section, 70 ... semiconductor substrate, 70A ... first surface (front surface) of the semiconductor substrate, 70B ... second surface (back surface) of the semiconductor substrate, 71 ... element isolation region, 72, 75 ... insulating material film, 74 ... HfO2 film, 76, 81 ... interlayer insulating layer, 82 ... insulating layer, 82 A ... area between adjacent image pickup elements (area -a), 83 ... protective material layer, 84 ... opening, 85 ... second opening, 100 ... solid-state image pickup device, 101 ... stacked image pickup element, 111 ... image pickup area, 112 ... vertical drive circuit, 113 ... column signal processing circuit, 114 ... horizontal drive circuit, 115 ... output circuit, 116 ... control circuit for driving, 117 ... signal line (data output line), 118 ... horizontal signal line, 200 ... electronic device (camera), 201 ... solid-state image pickup device, 210 ... optical lens, 211 ... aperture device, 212 ... drive circuit, 213 ... signal processing circuit, FD1, FD2, FD3, 45C, 46C ... floating diffusion layer, TR1 trs , TR2 trs , TR3 trs ... transfer transistor, TR1 rst , TR2 rst , TR3 rst ... Reset transistor, TR1 amp , TR2 amp , TR3 amp ... amplification transistor, TR1 sel , TR2 sel , TR3 sel ... selection transistor, V DD ... power supply, RST1, RST2, RST3 ... reset line, SEL1, SEL2, SEL3 ... select line, 117, VSL, VSL1, VSL2, VSL3 ... signal line (data output line), TG2, TG3 ... transmission gate line, V OA , V OB , V OT , V OU ... wiring< / ladungsemissionselektrode> < / bildaufnahmeelement>

Claims

[1] Image recording element (10), comprising: a photoelectric conversion section including a first electrode (21), a photoelectric conversion layer (23A) and a second electrode (22) stacked on each other, wherein an oxide film (23B) and an oxide semiconductor layer (23C) are formed immediately below the photoelectric conversion layer (23A) from one side of the photoelectric conversion layer (23A), and a value Conc H-1 a concentration of hydrogen atoms in a region of the oxide semiconductor layer (23C) near an interface between the oxide film (23B) and the oxide semiconductor layer (23C) is higher than a value Conc H-2 a concentration of hydrogen atoms in a central region of the oxide semiconductor layer (23C) along a thickness direction. [2] Image recording element (10), comprising: a photoelectric conversion section including a first electrode (21), a photoelectric conversion layer (23A) and a second electrode (22) stacked on each other, wherein an oxide film (23B) and an oxide semiconductor layer (23C) are formed immediately below the photoelectric conversion layer (23A) from one side of the photoelectric conversion layer (23A), and assuming that Conc H-1 denotes a value of the concentration of hydrogen atoms in a region of the oxide semiconductor layer (23C) near an interface between the oxide film (23B) and the oxide semiconductor layer (23C), and that Conc H-1 a value of the concentration of atoms contained in the oxide film (23B) in the region of the oxide semiconductor layer (23C) near the interface between the oxide film (23B) and the oxide semiconductor layer (23C), an average change rate ΔConc H-1 by Conc H-1towards the central region along the thickness direction of the oxide semiconductor layer (23C) is greater than an average change rate ΔConc M-1 by Conc M-1 towards the central region along the thickness direction of the oxide semiconductor layer (23C). [3] Image pickup element (10) according to claim 1 or 2, wherein at least some of the elements contained in the oxide film (23B) are different from elements contained in the oxide semiconductor layer (23C). [4] Image pickup element (10) according to claims 1 to 3, wherein assuming that E2 denotes an energy average value at a maximum energy value of a conduction band of the oxide semiconductor layer (23C) and that E1 denotes an energy average value at a maximum energy value of a conduction band of the oxide film (23B) E3−E4≥−0.4 eV is fulfilled. [5] Image pickup element (10) according to claim 4, wherein assuming that E0 denotes an energy average value at a LUMO value for the photoelectric conversion layer (23A), E0−E1≥−0.4 eV is fulfilled. [6] The image pickup element (10) according to claim 5, wherein E0 ≥ E1 ≥ E2 is satisfied. [7] Image pickup element (10) according to claims 1 to 6, wherein assuming that E4 denotes an energy average value at a minimum energy value for a valence band of the oxide film (23B) and that E3 denotes an energy average value at a HOMO value for the photoelectric conversion layer (23A), E3−E4≥−0.4 eV is fulfilled. [8] Image pickup element (10) according to claim 7, wherein assuming that E5 denotes an energy average value at a minimum energy value for a valence band of the oxide semiconductor layer (23C), E4−E5≥−0.4 eV is fulfilled. [9] The image pickup element (10) according to claim 8, wherein E3 ≥ E4 ≥ E5 is satisfied. [10] The image pickup element (10) according to claims 1 to 9, wherein a material contained in the oxide film (23B) contains a metal oxide. [11] The image pickup element (10) according to claim 10, wherein the metal oxide contains at least one kind of element selected from a group consisting of tantalum, titanium, vanadium, niobium, tungsten, zirconium, hafnium, scandium, yttrium, lanthanum, gallium and magnesium. [12] The image pickup element (10) according to claim 11, wherein the oxide film (23B) contains an addition of at least one kind of element selected from a group consisting of silicon, tantalum, vanadium, niobium, tungsten, zirconium, hafnium, scandium, yttrium, lanthanum, gallium, magnesium, aluminum, strontium, germanium, hydrogen, carbon, and nitrogen. [13] The image pickup element (10) according to claim 10 to 12, wherein the oxide film (23B) has a thickness equal to one atomic layer or greater and equal to 1 × 10 -7 m or smaller. [14] The image pickup element (19) according to claim 1 to 9, wherein the oxide film (23B) includes a tunnel oxide film. [15] The image pickup element (10) according to claim 14, wherein the tunnel oxide film contains at least one kind of material selected from a group consisting of SiO x , SiON, SiOC and AlO y contains. [16] The image pickup element (10) according to claim 14 or 15, wherein the tunnel oxide film has a thickness equal to one atomic layer or greater and equal to 5 × 10 -9 m or smaller. [17] The image pickup element (10) according to claim 1 to 9, wherein the oxide film (23B) includes a stacked structure of a metal oxide-containing film and a tunnel oxide film. [18] An image pickup element according to claims 1 to 17, wherein a charge generated in the photoelectric conversion layer (23A) migrates (21) to the first electrode via the oxide film (23B) and the oxide semiconductor layer (23C). [19] The image pickup element (10) of claim 18, wherein the charge comprises electrons. [20] Stacked image pickup element, comprising: at least one image recording element (10) according to one of claims 1 to 19. [21] Solid-state image pickup device, comprising: a plurality of image pickup elements (10) according to one of claims 1 to 19. [22] Solid-state image pickup device, comprising: a plurality of stacked image pickup elements according to claim 20.

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